Radio frequency front-end module and electronic device

Abstract

Embodiments of the present application provide a radio frequency front-end module and an electronic device. The radio frequency front-end module comprises a substrate and first, second and third radio frequency signal links. The first and second radio frequency signal links can simultaneously transmit radio frequency signals, and the third radio frequency signal link transmits radio frequency signals at different times from the first and second radio frequency signal links. The distance between filters in the first and second radio frequency signal links is greater than the distance between filters in the third and first radio frequency signal links, and greater than the distance between filters in the third and second radio frequency signal links. The distance between matching circuits in the first and second radio frequency signal links is greater than the distance between matching circuits in the third and first radio frequency signal links, and greater than the distance between matching circuits in the third and second radio frequency signal links. The isolation between multiple radio frequency signal links supporting a carrier aggregation working mode can be improved, so that the radio frequency front-end module has higher performance.

Description

Technical Field

[0001] This application relates to the field of radio frequency technology, and in particular to a radio frequency front-end module and electronic device. Background Technology

[0002] In communication equipment, the radio frequency (RF) front-end module refers to the part between the antenna and the transceiver, and typically includes power amplifiers, switches, low-noise amplifiers, and filters. The filters can form a receive link with the low-noise amplifier or a transmit link with the power amplifier.

[0003] With the continuous development of radio frequency technology, there are more and more frequency bands in radio frequency front-end modules. Some radio frequency front-end modules can support carrier aggregation (CA) of multiple frequency bands, that is, they can receive / transmit signals of multiple different frequency bands at the same time. However, if signals of different frequency bands are received and transmitted at the same time, crosstalk is likely to occur. Therefore, it is necessary to improve the isolation between multiple radio frequency signal links that support the carrier aggregation working mode in order to enable the radio frequency front-end module to have higher performance. Summary of the Invention

[0004] This application provides a radio frequency front-end module and electronic device that can improve the isolation between multiple radio frequency signal links supporting carrier aggregation operation mode, so that the radio frequency front-end module has higher performance.

[0005] In a first aspect, embodiments of this application provide a radio frequency front-end module, the radio frequency front-end module comprising:

[0006] substrate;

[0007] A first radio frequency (RF) signal link, a second RF signal link, and a third RF signal link are disposed on the substrate. The first RF signal link includes a first filter and a first matching circuit. The second RF signal link includes a second filter and a second matching circuit. The third RF signal link includes a third filter and a third matching circuit. The first RF signal link and the second RF signal link can transmit RF signals simultaneously. The third RF signal link transmits RF signals with the first RF signal link and the second RF signal link at different times.

[0008] Wherein, the distance between the first filter and the second filter is greater than the distance between the third filter and the first filter; and the distance between the first filter and the second filter is greater than the distance between the third filter and the second filter; and / or

[0009] The distance between the first matching circuit and the second matching circuit is greater than the distance between the third matching circuit and the first matching circuit; and the distance between the first matching circuit and the second matching circuit is greater than the distance between the third matching circuit and the matching circuit.

[0010] Secondly, embodiments of this application provide an electronic device, which includes the aforementioned radio frequency front-end module.

[0011] The RF front-end module and electronic device provided in this application include: a substrate and a first RF signal link, a second RF signal link, and a third RF signal link disposed on the substrate; the first RF signal link includes a first filter and a first matching circuit, the second RF signal link includes a second filter and a second matching circuit, and the third RF signal link includes a third filter and a third matching circuit; the first RF signal link and the second RF signal link can transmit RF signals simultaneously, while the third RF signal link transmits RF signals with the first and second RF signal links at different times; wherein the distance between the first filter and the second filter is greater than the distance between the third filter and the first filter; and the distance between the first filter and the second filter is greater than the distance between the third filter and the second filter; and / or the distance between the first matching circuit and the second matching circuit is greater than the distance between the third matching circuit and the first matching circuit; and the distance between the first matching circuit and the second matching circuit is greater than the distance between the third matching circuit and the matching circuit. This improves the isolation between multiple RF signal links supporting carrier aggregation operation mode, thereby enabling the RF front-end module to have higher performance.

[0012] It should be understood that the above general description and the following detailed description are exemplary and explanatory only, and do not limit the disclosure of the embodiments of this application. Attached Figure Description

[0013] To more clearly illustrate the technical solutions of the embodiments of this application, the drawings used in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0014] Figure 1 This is a schematic block diagram of a radio frequency front-end module provided in an embodiment of this application;

[0015] Figures 2 to 10 These are schematic diagrams of the radio frequency front-end module in some embodiments of this application;

[0016] Figure 11This is a schematic block diagram of an electronic device provided in an embodiment of this application.

[0017] Explanation of reference numerals in the attached figures:

[0018] 10. Substrate; 11. First region; 12. Second region; 13. First signal output port; 14. Antenna port; 15. Third region; 101. First substrate region; 102. Second substrate region;

[0019] 20. First filter chip; 21. First output terminal; 22. Second output terminal; 23. First input terminal; 24. Second input terminal; 25. Third input terminal; 211. First filter; 231. Third filter; 241. Fourth filter; 60. Second filter chip; 61. Second filter; 203. Third filter chip;

[0020] 91. First matching circuit; 92. Second matching circuit; 93. Third matching circuit; 94. Fourth matching circuit;

[0021] 201. Fifth matching circuit; 30. Input matching circuit; 31. Second inductor; 32. Third inductor; 33. Fourth inductor; 40. Output matching circuit; 41. First inductor; 42. First connecting line; 43. Second connecting line; 44. Third connecting line;

[0022] 50. Grounding metal film; 51. First metal film; 52. Second metal film; 53. Third metal film; 70. Matching circuit; 601. Sixth matching circuit; 80. Switching chip. Detailed Implementation

[0023] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0024] It should be understood that this application can be implemented in various forms and should not be construed as being limited to the embodiments set forth herein. Rather, providing these embodiments will make the disclosure thorough and complete, and will fully convey the scope of this application to those skilled in the art. In the drawings, for clarity, the dimensions of layers and regions, as well as their relative dimensions, may be exaggerated. The same reference numerals denote the same elements throughout.

[0025] To fully understand this application, detailed structures and steps will be presented in the following description to illustrate the technical solutions proposed in this application. Preferred embodiments of this application are described in detail below; however, in addition to these detailed descriptions, this application may have other implementation methods.

[0026] The following detailed description of some embodiments of this application is provided in conjunction with the accompanying drawings. Unless otherwise specified, the following embodiments and features can be combined with each other.

[0027] Please see Figure 1 , Figure 1 This is a schematic block diagram of a radio frequency front-end module provided in an embodiment of this application.

[0028] like Figure 1 As shown, the radio frequency front-end module includes: a substrate 10 and a first radio frequency signal link, a second radio frequency signal link and a third radio frequency signal link disposed on the substrate 10.

[0029] The RF front-end module can include an RF transmit link and an RF receive link. The RF transmit link is mainly responsible for amplifying the RF signal before transmitting it to the antenna port for transmission. The RF transmit link mainly includes an RF power amplifier and a filter. The RF power amplifier amplifies the RF signal, and the filter filters the amplified RF signal to ensure signal quality. The RF transmit link also includes matching circuits, such as matching circuits connected between the RF power amplifier and the filter, and / or matching circuits connected between the filter and the antenna. The matching circuits ensure that the RF signal is transmitted with less loss in the RF transmit link.

[0030] The RF receiver link mainly includes filters and low-noise amplifiers. Filters are used to filter the RF signal received by the antenna to ensure the quality of the RF signal, and low-noise amplifiers are used to amplify the filtered RF signal to improve the signal-to-noise ratio of the RF signal. The RF receiver link also includes matching circuits, such as matching circuits connected between the antenna and the filter, and / or matching circuits connected between the filter and the low-noise amplifier; the matching circuits ensure that the RF signal is transmitted with less loss in the RF receiver link.

[0031] For ease of explanation, the embodiments of this application are mainly illustrated by taking the first radio frequency signal link, the second radio frequency signal link, and the third radio frequency signal link as radio frequency receiving links.

[0032] The first radio frequency signal link includes a first filter 211 and a first matching circuit 91, the second radio frequency signal link includes a second filter 61 and a second matching circuit 92, and the third radio frequency signal link includes a third filter 231 and a third matching circuit 93.

[0033] Filters are used to filter radio frequency (RF) signals to improve their signal quality.

[0034] The filter includes multiple resonators, each of which can be a surface acoustic wave (SAW) resonator or a bulk acoustic wave (BAW) resonator. For example, the resonators in the filter can be a Normal SAW resonator, a TC-SAW (Temperature-compensated SAW) resonator, a resonator with a multilayer structure beneath the piezoelectric layer, an X-BAR (Transversely Excited Thin Film Bulk Acoustic Wave) resonator, a DMS (Dual-mode SAW) resonator, a longitudinally coupled SAW resonator, etc. The filter can be integrated into a filter chip; for example, a filter chip can integrate one or more filters.

[0035] In each RF signal link, a matching circuit is connected to the corresponding filter. In some embodiments, the matching circuit in the RF signal link includes a matching circuit connected to the input terminal of the filter and / or a matching circuit connected to the output terminal of the filter. The matching circuit connected to the input terminal of the filter can be called the input matching circuit, which is used to perform impedance matching on the RF signal input to the filter to reduce the loss during RF signal transmission; the matching circuit connected to the output terminal of the filter can be called the output matching circuit, which is used to perform impedance matching on the RF signal output by the filter to reduce the loss during RF signal transmission. For ease of explanation, the embodiments of this application mainly use the input matching circuit as an example.

[0036] The first and second RF signal links can transmit RF signals simultaneously, while the third RF signal link transmits RF signals at different times than the first and second RF signal links. Specifically, in the RF front-end module, the RF signals transmitted by the first and second RF signal links undergo carrier aggregation, while the RF signals transmitted by the third and second RF signal links do not undergo carrier aggregation.

[0037] Please see Figure 1 The distance between the first filter 211 and the second filter 61 is greater than the distance between the third filter 231 and the first filter 211; and the distance between the first filter 211 and the second filter 61 is greater than the distance between the third filter 231 and the second filter 61.

[0038] By increasing the distance between multiple filters that support carrier aggregation, filters that are working simultaneously can be isolated, which can reduce crosstalk between different RF signal links when transmitting RF signals of different frequency bands at the same time, thereby improving the performance of the RF front-end module.

[0039] In some implementations, please refer to Figure 3 The distance between different filters includes the distance between the input terminals (IN) of different filters and / or the distance between the output terminals (OUT) of different filters. For example, the distance between the input terminal of the first filter 211 and the input terminal of the second filter 61 is greater than the distance between the input terminal of the third filter 231 and the input terminal of the first filter 211; or, the distance between the input terminal of the first filter 211 and the input terminal of the second filter 61 is greater than the distance between the input terminal of the third filter 231 and the input terminal of the second filter 61; or, the distance between the input terminal of the first filter 211 and the input terminal of the second filter 61 is greater than the distance between the input terminal of the third filter 231 and the input terminal of the first filter 211, and the distance between the input terminal of the first filter 211 and the input terminal of the second filter 61 is greater than the distance between the input terminal of the third filter 231 and the input terminal of the second filter 61.

[0040] Please see Figure 1 or Figure 3 The distance between the first matching circuit 91 and the second matching circuit 92 is greater than the distance between the third matching circuit 93 and the first matching circuit 91; and the distance between the first matching circuit 91 and the second matching circuit 92 is greater than the distance between the third matching circuit 93 and the matching circuit.

[0041] By increasing the distance between the matching circuits in multiple RF signal links that support carrier aggregation, crosstalk between different RF signal links when they transmit RF signals of different frequency bands at the same time can be reduced, thereby improving the performance of the RF front-end module.

[0042] In some implementations, the distance between different matching circuits includes: the distance between the input terminals of different matching circuits, and / or the distance between the output terminals of different matching circuits, and / or the distance between the centers of different matching circuits. For example, if the input matching inductor of the input matching circuit is a ring-wound metal coil, then the distance between different matching circuits can be the distance between the centers of the different metal coils.

[0043] For example, please refer to Figure 2The first matching circuit 91 includes a first input matching circuit, the second matching circuit 92 includes a second input matching circuit, and the third matching circuit 93 includes a third input matching circuit; each input matching circuit is connected to the input terminal of the corresponding filter.

[0044] The RF front-end module also includes an antenna port 14 and a switch chip 80, which are disposed on the substrate 10. The switch chip 80 includes at least a first switch path, a second switch path, and a third switch path. The first switch path is connected between the antenna port 14 and the first filter 211, the second switch path is connected between the antenna port 14 and the second filter 61, and the third switch path is connected between the antenna port 14 and the third filter 231. The switch chip 80 is used to activate the corresponding switch path according to the frequency band of the RF signal received by the antenna port 14, so as to transmit the received RF signal to the filter corresponding to the activated switch path.

[0045] For example, the input terminal of the first filter 211 is grounded through a first input matching circuit, the input terminal of the second filter 61 is grounded through a second input matching circuit, and the input terminal of the third filter 231 is grounded through a third input matching circuit.

[0046] For example, the input matching circuit includes an input matching inductor. The input matching circuit is connected in parallel between the switching chip 80 and the corresponding filter. For instance, the input matching circuit includes an inductor, with one end connected to the input of the filter and the other end grounded, to perform impedance matching of the RF signal between the switching chip 80 and the filter, thereby reducing losses during RF signal transmission.

[0047] Optionally, as one implementation, the input matching inductor may include a metal trace inductor formed on one or more metal layers of the substrate 10. The metal trace inductor may be an inductor wound in a coil shape, or a straight metal trace, a zigzag metal trace, or a curved metal trace. As another implementation, the input matching circuit may also employ a surface mount device (SMD) inductor.

[0048] In some implementations, such as Figure 3 As shown, the first filter 211 is disposed on the first filter chip 20, the second filter 61 is disposed on the second filter chip 60, and the third filter 231 is disposed on the third filter chip 203. Each filter chip may integrate one or more filters.

[0049] The first filter 211 and the second filter 61, which support carrier aggregation mode, are set in different filter chips. This can enhance the isolation effect between the first filter 211 and the second filter 61, further reduce crosstalk between different RF signal links when they are operating in carrier aggregation mode, and thus improve the performance of the RF front-end module.

[0050] Specifically, the distance between the first filter chip 20 and the second filter chip 60 is greater than the distance between the third filter chip 203 and the first filter chip 20, and the distance between the third filter chip 203 and the second filter chip 60. This ensures that the distance between the first filter 211 and the second filter 61 is greater than the distance between the third filter 231 and the first filter 211; and the distance between the first filter 211 and the second filter 61 is greater than the distance between the third filter 231 and the second filter 61.

[0051] In other implementations, such as Figure 4 As shown, the first filter 211 and the third filter 231 are disposed on the first filter chip 20, and the second filter 61 is disposed on the second filter chip 60, with the second filter chip 60 and the first filter chip 20 separated. By disposing the first filter 211 and the second filter 61, which support carrier aggregation mode, in different filter chips, the isolation effect between the first filter 211 and the second filter 61 can be enhanced, further reducing crosstalk between different RF signal links operating in carrier aggregation mode, thereby improving the performance of the RF front-end module.

[0052] The first filter chip 20 includes a first end (as above) and a second end (as below) positioned opposite each other. In the first filter chip 20, the first filter 211 is positioned closer to the first end of the first filter chip 20 than the third filter 231, and the second end of the first filter chip 20 is closer to the second filter chip 60 than the first end of the first filter chip 20. This ensures that the distance between the first filter 211 and the second filter 61 is greater than the distance between the third filter 231 and the first filter 211; and the distance between the first filter 211 and the second filter 61 is greater than the distance between the third filter 231 and the second filter 61. By increasing the distance between multiple filters supporting carrier aggregation mode, the filters supporting carrier aggregation mode can be isolated, reducing crosstalk between different RF signal links operating in carrier aggregation mode, thereby improving the performance of the RF front-end module.

[0053] For example, please refer to Figure 3 or Figure 4The projection of the first filter chip 20 along the first direction does not coincide with the projection of the second filter chip 60 along the first direction at least partially; and / or, the projection of the first filter chip 20 along the second direction does not coincide with the projection of the second filter chip 60 along the second direction; the first direction is parallel to the first side of the substrate 10, the second direction is parallel to the second side of the substrate 10, and the first side and the second side of the substrate 10 are adjacent.

[0054] For example, please see Figure 3 or Figure 4 The first direction is horizontal, and the first side of the substrate 10 is either the upper or lower side of the substrate 10; the second direction is vertical, and the second side of the substrate 10 is either the left or right side of the substrate 10; the projections of the first filter chip 20 and the second filter chip 60 along the first direction on the left side of the substrate 10 do not overlap, the projections of the first filter chip 20 and the second filter chip 60 along the first direction on the right side of the substrate 10 do not overlap, the projections of the first filter chip 20 and the second filter chip 60 along the second direction on the upper side of the substrate 10 do not overlap, and the projections of the first filter chip 20 and the second filter chip 60 along the second direction on the lower side of the substrate 10 do not overlap; that is, the positions of the first filter chip 20 and the second filter chip 60 are staggered in both the first and second directions. The staggered positions of the first filter chip 20 and the second filter chip 60 in at least one direction can further enhance the isolation effect between the first filter 211 and the second filter 61, thereby further reducing crosstalk between different RF signal links when operating in carrier aggregation mode, and thus improving the performance of the RF front-end module.

[0055] In some implementations, please refer to Figure 4 The RF front-end module also includes a fourth RF signal link, which includes a fourth filter 241 and a fourth matching circuit 94. The fourth matching circuit 94 includes at least a fourth input matching circuit.

[0056] The fourth radio frequency signal link can transmit radio frequency signals simultaneously with the first radio frequency signal link. That is, the frequency band of the fourth radio frequency signal link and the frequency band of the first radio frequency signal link are carrier aggregated.

[0057] Specifically, the fourth radio frequency signal link transmits radio frequency signals at different times with the second and third radio frequency signal links. The frequency band of the fourth radio frequency signal link does not perform carrier aggregation with the frequency band of the second radio frequency signal link, nor does it perform carrier aggregation with the frequency band of the third radio frequency signal link.

[0058] like Figure 4 As shown, the fourth filter 241 and the first filter 211 are disposed on the first filter chip 20; the first filter chip 20 includes a first end and a second end disposed opposite to each other.

[0059] Optionally, the first filter 211 is disposed at the first end (as above) of the first filter chip 20, and the fourth filter 241 is disposed at the second end (as below) of the first filter chip 20; and / or in the first filter chip 20, at least one filter (such as the third filter 231 or a filter other than the first filter 211, the third filter 231, and the fourth filter 241) is disposed between the first filter 211 and the fourth filter 241.

[0060] For the same filter chip, by placing the fourth filter 241, which supports carrier aggregation mode, and the first filter 211 at opposite ends of the filter chip, i.e. increasing the distance between the fourth filter 241 and the first filter 211, and / or by setting other filters between the fourth filter 241 and the first filter 211 for isolation, the crosstalk between different RF signal links operating in carrier aggregation mode can be reduced, thereby improving the performance of the RF front-end module.

[0061] For example, the operating frequency band of the first RF signal link is higher than that of the fourth RF signal link. The first end of the first filter chip 20 is positioned further away from the other filter chips on the substrate 10 than the second end of the first filter chip 20. That is, the distance between the first filter 211 and the other filter chips on the substrate 10 is greater than the distance between the fourth filter 241 and the other filter chips on the substrate 10. The operating frequency band of the first RF signal link is higher, and higher frequency RF signals are more likely to generate crosstalk with other RF signals. By increasing the distance between the first filter 211, which operates at a higher frequency, and the other filter chips on the substrate 10, the crosstalk between the RF signal of the first filter 211 and the RF signals of other filter chips can be reduced more significantly. For example, the crosstalk between the RF signal of the first filter 211 and the RF signal of the second filter 61 can be reduced, thereby improving the performance of the RF front-end module.

[0062] In some embodiments, a matching circuit for at least one radio frequency signal link is disposed between the first filter 211 and the second filter 61. For example... Figure 4 As shown, the third matching circuit 93 of the third RF signal link and the fourth matching circuit 94 corresponding to the fourth RF signal link are disposed between the first filter 211 and the second filter 61.

[0063] Preferably, the frequency band corresponding to the RF signal link (such as the third RF signal link) where the matching circuit is located between the first filter 211 and the second filter 61 is located does not undergo carrier aggregation with the frequency band corresponding to the first RF signal link and the frequency band corresponding to the second RF signal link.

[0064] By incorporating matching circuits for additional RF signal links between multiple filters supporting carrier aggregation mode, these matching circuits can isolate the first filter 211 and the second filter 61 and increase the distance between them. This reduces crosstalk between different RF signal links operating in carrier aggregation mode, thereby improving the performance of the RF front-end module. Furthermore, incorporating matching circuits for additional RF signal links between the first filter 211 and the second filter 61 allows for a more compact layout of the substrate 10, which helps to reduce the size of the RF front-end module.

[0065] In some embodiments, at least one matching circuit is provided between the first matching circuit 91 and the second matching circuit 92, and the at least one matching circuit is a matching circuit for a radio frequency signal link other than the first radio frequency signal link and the second radio frequency signal link.

[0066] like Figure 4 As shown, the third matching circuit 93 of the third RF signal link is disposed between the first matching circuit 91 and the second matching circuit 92. For example, the first matching circuit 91 includes a first input matching circuit, the second matching circuit 92 includes a second input matching circuit, and the third matching circuit 93 includes a third input matching circuit; each input matching circuit is connected to the input terminal of the corresponding filter; the third input matching circuit is disposed between the first input matching circuit and the second input matching circuit.

[0067] Preferably, the frequency band corresponding to the RF signal link (such as the third RF signal link) where the matching circuit located between the first matching circuit 91 and the second matching circuit 92 is located is not carrier aggregated with the frequency band corresponding to the first RF signal link and the frequency band corresponding to the second RF signal link.

[0068] By setting matching circuits for other RF signal links among the matching circuits in multiple RF signal links that support carrier aggregation mode, the matching circuits corresponding to the first filter 211 and the second filter 61 can be isolated, and the distance between the matching circuits corresponding to the first filter 211 and the second filter 61 can be increased. This can reduce crosstalk between different RF signal links when they are operating in carrier aggregation mode, thereby improving the performance of the RF front-end module.

[0069] For example, the projection of at least one matching circuit disposed between the first matching circuit 91 and the second matching circuit 92 along the first direction is at least partially located between the projections of the first matching circuit 91 and the second matching circuit 92 along the first direction; and / or the projection of at least one matching circuit along the second direction is at least partially located between the projections of the first matching circuit 91 and the second matching circuit 92 along the second direction, the second direction intersecting the first direction; the first direction is parallel to one side of the substrate 10.

[0070] For example, please see Figure 3 or Figure 4 The first direction is horizontal, and the first side of the substrate 10 is the upper or lower side of the substrate 10; the second direction is vertical, and the second side of the substrate 10 is the left or right side of the substrate 10; the projection of the third matching circuit 93 along the first direction onto the left side of the substrate 10 is at least partially located between the projection of the first matching circuit 91 along the first direction onto the left side of the substrate 10 and the projection of the second matching circuit 92 along the first direction onto the left side of the substrate 10.

[0071] For example, the projections of the first matching circuit 91 and the second matching circuit 92 along the first direction onto the left side of the substrate 10 do not overlap; the projections of the first matching circuit 91 and the second matching circuit 92 along the first direction onto the right side of the substrate 10 do not overlap; the projections of the first matching circuit 91 and the second matching circuit 92 along the second direction onto the upper side of the substrate 10 do not overlap; and the projections of the first matching circuit 91 and the second matching circuit 92 along the second direction onto the lower side of the substrate 10 do not overlap. That is, the positions of the first matching circuit 91 and the second matching circuit 92 are staggered in both the first and second directions. The projection of the third matching circuit 93 along the first direction onto the left side of the substrate 10 is at least partially located between the projections of the first matching circuit 91 and the second matching circuit 92 along the first direction onto the left side of the substrate 10.

[0072] The first matching circuit 91 and the second matching circuit 92 are spaced apart in at least one direction, and at least one matching circuit is provided on the substrate 10 at a position corresponding to the space. This can enhance the isolation effect between the matching circuit corresponding to the first filter 211 and the matching circuit corresponding to the second filter 61, thereby further reducing crosstalk between different RF signal links when they are operating in carrier aggregation mode, and thus improving the performance of the RF front-end module.

[0073] In some implementation methods, please refer to Figure 2 See Figure 4The RF front-end module also includes an antenna port 14 and a switching chip 80, which is located between the first matching circuit 91 and the second matching circuit 92. Placing the switching chip 80 between the matching circuits in multiple RF signal links supporting carrier aggregation mode increases the distance between these circuits and isolates them, reducing crosstalk between different RF signal links operating in carrier aggregation mode, thereby improving the performance of the RF front-end module.

[0074] For example, the projections of the first matching circuit 91 on the first straight line, the projection of the switch chip 80 on the first straight line, and the projections of the second matching circuit 92 on the first straight line are spaced apart, and the projections of the first matching circuit 91 on the first straight line and the second matching circuit 92 on the first straight line are respectively located on both sides of the projection of the switch chip 80 on the first straight line; wherein, the first straight line is parallel to the side of the switch chip 80.

[0075] For example, please see Figure 4 Taking a straight line parallel to the left or right side of the switch chip 80 as an example, the projection of the switch chip 80 onto the first straight line is located between the projections of the first matching circuit 91 and the second matching circuit 92 onto the first straight line. This can increase the distance between the matching circuits corresponding to the first filter 211 and the second filter 61, and the switch chip 80 can also isolate the matching circuits corresponding to the first filter 211 and the second filter 61. This can reduce crosstalk between different frequency bands of carrier aggregation when they are transmitted simultaneously on different RF signal links, thereby improving the performance of the RF front-end module.

[0076] For example, please refer to Figure 4 The switch chip 80 is rectangular and includes a first side (such as the upper side) and a second side (such as the lower side) opposite to the first and second sides, as well as a third side (such as the left or right side) adjacent to the first and second sides. The length of the third side is greater than the length of the first and second sides. A first straight line is parallel to the third side. Compared to the first straight line being parallel to the shorter first and second sides, the first straight line is parallel to the longer side of the switch chip 80, and the projections of the first matching circuit 91 and the second matching circuit 92 on the first straight line are located on opposite sides of the projection of the switch chip 80 on the first straight line, respectively. This results in a larger distance between the first matching circuit 91 and the second matching circuit 92, which can further reduce crosstalk between the matching circuits corresponding to the first filter 211 and the matching circuits corresponding to the second filter 61 in different frequency bands, thereby improving the performance of the RF front-end module.

[0077] In some implementations, such as Figure 5 As shown, the RF front-end module includes at least two first RF signal links, wherein the first RF signal links can transmit RF signals simultaneously with the second RF signal links, and the first, second, and third RF signal links transmit RF signals at different times. The filters for different first RF signal links can be integrated into the same filter chip or into different filter chips, such as... Figure 4 As shown, the filters for the two first radio frequency signal links are integrated into the first filter chip 20.

[0078] At least two first radio frequency signal links include a first radio frequency signal link in a first operating frequency band and a first radio frequency signal link in a second operating frequency band. For ease of distinction, the first filter 211 in the first radio frequency signal link in the first operating frequency band is referred to as filter 21a, and the first matching circuit 91 in the first radio frequency signal link in the first operating frequency band is referred to as matching circuit 91a; the first filter 211 in the first radio frequency signal link in the second operating frequency band is referred to as filter 21b, and the first matching circuit 91 in the first radio frequency signal link in the second operating frequency band is referred to as matching circuit 91b.

[0079] For example, please refer to Figure 5 The projection of the switching chip 80 onto the first straight line is at least partially located between the projections of the first matching circuit 91 (e.g., matching circuit 91a) and the second matching circuit 92 corresponding to the first operating frequency band onto the first straight line. For example, the first matching circuit 91 corresponding to the first operating frequency band is positioned near the upper side of the switching chip 80, and the second matching circuit 92 is positioned near the lower side of the switching chip 80. The projection of the first matching circuit 91 (e.g., matching circuit 91b) corresponding to the second operating frequency band onto the first straight line at least partially coincides with the projection of the switching chip 80 onto the first straight line. For example, the first matching circuit 91 (e.g., matching circuit 91b) corresponding to the second operating frequency band is positioned near the right side of the switching chip 80. The first straight line is parallel to the side of the switching chip 80. It is understood that the distance between the first matching circuit 91 (e.g., matching circuit 91a) and the second matching circuit 92 corresponding to the first operating frequency band is greater than the distance between the first matching circuit 91 (e.g., matching circuit 91b) and the second matching circuit 92 corresponding to the second operating frequency band. This can significantly reduce the crosstalk between the RF signal of the first matching circuit 91 (such as matching circuit 91a) and the RF signal of the second matching circuit 92 corresponding to the first operating frequency band, thereby improving the performance of the RF front-end module.

[0080] Wherein, the first operating frequency band is higher than the second operating frequency band, and / or the bandwidth of the first operating frequency band is greater than the bandwidth of the second operating frequency band, and / or the first radio frequency signal link of the first operating frequency band can also transmit radio frequency signals simultaneously with at least one radio frequency signal link other than the second radio frequency signal link. For example, the first operating frequency band is higher than the second operating frequency band, and the first radio frequency signal link of the first operating frequency band can also transmit radio frequency signals simultaneously with a fourth radio frequency signal link.

[0081] The first operating frequency band is higher than the second operating frequency band. Higher frequency radio frequency signals are more likely to cause crosstalk with other radio frequency signals. By setting the distance between the first matching circuit 91 (such as matching circuit 91a) and the second matching circuit 92 of the higher operating frequency band to be greater, the crosstalk between the radio frequency signal of the first matching circuit 91 (such as matching circuit 91a) and the radio frequency signal of the second matching circuit 92 of the higher operating frequency band can be reduced more significantly, thereby improving the performance of the radio frequency front-end module.

[0082] For example, the bandwidth of the first operating frequency band is 150 MHz to 500 MHz, and the bandwidth of the second operating frequency band is 60 MHz to 120 MHz. Radio frequency signals in wider bandwidth operating frequency bands are more prone to crosstalk with other radio frequency signals. By setting a greater distance between the first matching circuit 91 (e.g., matching circuit 91a) and the second matching circuit 92 in the wider bandwidth operating frequency band, the crosstalk between the radio frequency signal of the first matching circuit 91 (e.g., matching circuit 91a) and the radio frequency signal of the matching circuit supporting carrier aggregation operating mode can be significantly reduced, thereby improving the performance of the radio frequency front-end module.

[0083] For example, the first RF signal link in the first operating frequency band can also transmit RF signals simultaneously with the fourth RF signal link. Since the first RF signal link corresponding to the first operating frequency band can work simultaneously with RF signal links in more frequency bands, the first RF signal link corresponding to the first operating frequency band is more prone to crosstalk with other RF signals. By setting a greater distance between the first matching circuit 91 (such as matching circuit 91a) and the second matching circuit 92 in the first RF signal link corresponding to the first operating frequency band, the crosstalk between the RF signal of the first matching circuit 91 (such as matching circuit 91a) and the RF signals of the other matching circuits can be reduced more significantly, thereby improving the performance of the RF front-end module.

[0084] For example, the switch chip 80 is rectangular and includes a first side and a second side opposite to each other, and a third side adjacent to the first and second sides. The length of the third side is greater than the length of the first and second sides. A first straight line is parallel to the third side. Compared to the first straight line being parallel to the shorter first and second sides, when the first straight line is parallel to the longer side of the switch chip 80 and the projection of the switch chip 80 onto the first straight line is at least partially located between the projection of the first matching circuit 91 (e.g., matching circuit 91a) and the second matching circuit 92 corresponding to the first operating frequency band onto the first straight line, the distance between the first matching circuit 91 (e.g., matching circuit 91a) and the second matching circuit 92 corresponding to the first operating frequency band is larger. This can further reduce the crosstalk of the radio frequency signals between the first matching circuit 91 (e.g., matching circuit 91a) and the second matching circuit 92 corresponding to the first operating frequency band, thereby improving the performance of the radio frequency front-end module.

[0085] In some implementations, such as Figure 4 As shown, the RF front-end module also includes a fourth RF signal link, which includes a fourth filter 241 and a fourth matching circuit 94. The fourth filter 241 and the first filter 211 of the first RF signal link are disposed on the first filter chip 20. The fourth RF signal link can transmit RF signals simultaneously with the first RF signal link. That is, the frequency band corresponding to the fourth RF signal link and the frequency band corresponding to the first RF signal link perform carrier aggregation.

[0086] Optionally, the first matching circuit 91 and the fourth matching circuit 94 are positioned near different sides of the first filter chip 20. For example, the first matching circuit 91 (e.g., matching circuit 91a) is positioned near the upper and left sides of the first filter chip 20, and the fourth matching circuit 94 is positioned near the lower side of the first filter chip 20. Increasing the distance between the first matching circuit 91 and the fourth matching circuit 94 can reduce crosstalk between their radio frequency signals. Furthermore, since the first filter chip 20 isolates the first matching circuit 91 and the fourth matching circuit 94, crosstalk between their radio frequency signals can also be reduced, thereby improving the performance of the radio frequency front-end module.

[0087] For example, the projection of the first filter chip 20 along the first direction is at least partially located between the projections of the first matching circuit 91 and the fourth matching circuit 94 along the first direction; and / or the projection of the first filter chip 20 along the second direction is at least partially located between the projections of the first matching circuit 91 and the fourth matching circuit 94 along the second direction, the second direction intersecting the first direction; the first direction is parallel to one side of the substrate 10.

[0088] For example, please see Figure 4 The first direction is horizontal, and the first side of the substrate 10 is either the upper or lower side of the substrate 10; the second direction is vertical, and the second side of the substrate 10 is either the left or right side of the substrate 10. The projection of the first filter chip 20 onto the left side of the substrate 10 along the first direction is at least partially located between the projections of the first matching circuit 91 and the fourth matching circuit 94 onto the left side of the substrate 10 along the first direction; for example, the projection of the first filter chip 20 onto the left side of the substrate 10 along the first direction is located between the projections of the first matching circuit 91 (e.g., matching circuit 91a) and the fourth matching circuit 94 corresponding to the first operating frequency band onto the left side of the substrate 10 along the first direction; the projection of the first filter chip 20 onto the left side of the substrate 10 along the first direction is partially located between the projections of the first matching circuit 91 (e.g., matching circuit 91b) and the fourth matching circuit 94 corresponding to the second operating frequency band onto the left side of the substrate 10 along the first direction. It is understandable that the distance between the first matching circuit 91 (such as matching circuit 91a) and the fourth matching circuit 94 corresponding to the first operating frequency band is greater than the distance between the first matching circuit 91 (such as matching circuit 91b) and the fourth matching circuit 94 corresponding to the second operating frequency band. This can further reduce the crosstalk of the radio frequency signals between the first matching circuit 91 (such as matching circuit 91a) and the fourth matching circuit 94 supporting the carrier aggregation operating mode, thereby improving the performance of the radio frequency front-end module.

[0089] The RF front-end module of this application embodiment includes: a substrate and a first RF signal link, a second RF signal link, and a third RF signal link disposed on the substrate; the first RF signal link includes a first filter and a first matching circuit, the second RF signal link includes a second filter and a second matching circuit, and the third RF signal link includes a third filter and a third matching circuit; the first RF signal link and the second RF signal link can transmit RF signals simultaneously, while the third RF signal link transmits RF signals with the first RF signal link and the second RF signal link at different times; wherein, the distance between the first filter and the second filter is greater than the distance between the third filter and the first filter; and the distance between the first filter and the second filter is greater than the distance between the third filter and the second filter; and / or the distance between the first matching circuit and the second matching circuit is greater than the distance between the third matching circuit and the first matching circuit; and the distance between the first matching circuit and the second matching circuit is greater than the distance between the third matching circuit and the matching circuit. This improves the isolation between multiple RF signal links supporting carrier aggregation operation mode, thereby enabling the RF front-end module to have higher performance.

[0090] In some implementations, such as Figure 6As shown, the RF front-end module includes: a substrate 10, a first filter chip 20, an input matching circuit 30, and an output matching circuit 40. The first filter chip 20, the input matching circuit 30, and the output matching circuit 40 are disposed on the substrate 10.

[0091] The first filter chip 20 contains one or more filters. For example, the filter chip can be a single filter or multiple filters sharing the same wafer. Specifically, the filter includes multiple resonators, each of which can be a surface acoustic wave (SAW) resonator or a bulk acoustic wave (BAW) resonator. For example, the resonators in the filter can be a Normal SAW resonator, a TC-SAW (Temperature Compensated SAW) resonator, a resonator with a multilayer structure beneath the piezoelectric layer, an X-BAR (Transversely Excited Thin Film Bulk Acoustic Wave) resonator, a DMS (Double-mode SAW) resonator, a longitudinally coupled SAW resonator, etc.

[0092] The input matching circuit 30 is connected to the input terminal of the first filter chip 20, and the output matching circuit 40 is connected to the output terminal of the first filter chip 20. Specifically, the input terminal of at least one filter in the first filter chip 20 is connected to the corresponding input matching circuit 30, and the output terminal of at least one filter in the first filter chip 20 is connected to the corresponding output matching circuit 40.

[0093] The input matching circuit 30 enables the output impedance of the signal source to match the input impedance of the first filter chip 20, thereby reducing signal reflection and transmission loss and improving signal transmission efficiency. For example, the input matching circuit 30 includes an input matching inductor, the first end of which is connected to the input terminal of the first filter chip 20, and the second end of which is grounded.

[0094] The output matching circuit 40 enables the output impedance of the first filter chip 20 to match the input impedance of subsequent circuits or loads, further reducing signal reflection and transmission loss, thereby improving signal transmission efficiency. For example, the output matching circuit 40 includes an output matching inductor, with its first end connected to the output terminal of the first filter chip 20 and its second end used to connect to subsequent circuits or loads.

[0095] In some implementations, please refer to Figure 7 and Figure 8The RF front-end module also includes an antenna port 14 and a switch chip 80. The switch chip 80 includes multiple switch paths, which are connected between the antenna port 14 and the corresponding filter. The switch chip 80 is used to turn on the corresponding switch path according to the frequency band of the RF signal received by the antenna port 14, so as to transmit the received RF signal to the corresponding filter.

[0096] In one implementation, the input matching circuit 30 is connected in parallel between the switching chip 80 and the corresponding filter. That is, one end of the input matching circuit 30 is connected to the connection path between the switching chip 80 and the corresponding filter, and the other end is grounded. For example, the input matching circuit 30 includes an inductor (which can be called an input matching inductor). The first end of the inductor in the input matching circuit 30 is connected to the input terminal of the filter, and the second end of the inductor is grounded to perform impedance matching of the radio frequency signal between the switching chip 80 and the filter, thereby reducing losses during radio frequency signal transmission.

[0097] The filter is used to filter radio frequency (RF) signals to improve their signal quality. The output matching circuit 40 is used to perform impedance matching on the RF signal output by the filter to reduce losses during RF signal transmission.

[0098] Among them, such as Figure 6 and Figure 7 As shown, a grounding metal film 50 for grounding is provided on the substrate 10. For example, the substrate 10 includes a ground layer, and the grounding metal film 50 is connected to the ground layer through metal vias; however, it is not limited to this. For example, multiple metal layers of the substrate 10 each include a grounding metal film 50, and the grounding metal films 50 of each metal layer can be connected through metal vias to allow the grounding ports of radio frequency devices to be grounded.

[0099] The grounding metal film 50 includes at least a first metal film 51, and the first metal film 51 is at least partially located between a first region 11 and a second region 12 of the substrate 10; the first region 11 is the region corresponding to the input terminal of the first filter chip 20 and / or the input matching circuit 30, and the second region 12 is the region corresponding to the output terminal of the first filter chip 20 and / or the output matching circuit 40. For example, the first metal film 51 may be disposed between the input terminal and the output terminal of the first filter chip 20, or between the input matching circuit 30 and the output matching circuit 40 of the first filter chip 20, or extend from between the input terminal and the output terminal of the first filter chip 20 to between the input matching circuit 30 and the output matching circuit 40.

[0100] For ease of description, the first region 11 can be referred to as the signal input region corresponding to the first filter chip 20, and the second region 12 can be referred to as the signal output region corresponding to the first filter chip 20.

[0101] By setting a first metal film 51 between the signal input area and the signal output area of ​​the first filter chip 20, the signal input area and the signal output area of ​​the first filter chip 20 are isolated. This prevents the radio frequency signal in the signal input area from coupling to the signal output area and causing coupling interference to the radio frequency signal output by the first filter chip 20. It also prevents the radio frequency signal in the signal output area from coupling to the signal input area and causing coupling interference to the radio frequency signal input to the first filter chip 20. This improves the signal quality of the radio frequency signal input to the first filter chip 20 and the radio frequency signal output by the first filter chip 20, thereby improving the performance of the radio frequency front-end module.

[0102] In some embodiments, the first metal film 51 is at least partially located between the input matching circuit 30 and the output matching circuit 40 of the first filter chip 20. Isolating the input matching circuit 30 and the output matching circuit 40 of the same filter through the grounded first metal film 51 improves the signal quality of the RF signal input to and output from the first filter chip 20, thereby enhancing the performance of the RF front-end module.

[0103] For example, such as Figure 7 As shown, the input terminal of the first filter chip 20 includes a first input terminal 23 corresponding to the fourth filter 241, which is configured to input a radio frequency signal in the first frequency band. The output terminal of the first filter chip 20 includes a first output terminal 21 corresponding to the fourth filter 241, which is configured to output a radio frequency signal in the first frequency band. The output matching circuit 40 of the fourth filter 241 in the first filter chip 20 includes a first inductor 41, and the input matching circuit 30 of the fourth filter 241 includes a second inductor 31. The first metal film 51 is at least partially located between the first inductor 41 and the second inductor 31. Optionally, the first metal film 51 can be disposed on the metal layer where the first inductor 41 is located, or on the metal layer where the second inductor 31 is located, or on the metal layer where both the first inductor 41 and the second inductor 31 are located. This can enhance the isolation effect of the first metal film 51 and save on the number of metal layers occupied. Optionally, the first metal film 51 can also be disposed on a metal layer other than the metal layer where the first inductor 41 is located or the metal layer where the second inductor 31 is located. For example, it can facilitate the setting of metal traces on the metal layer where the first inductor 41 is located to connect to the output terminal of the filter, and facilitate the setting of metal traces on the metal layer where the second inductor 31 is located to connect to the input terminal of the filter.

[0104] For example, such as Figure 7As shown, the output terminals of the first filter chip 20 include a first output terminal 21 and a second output terminal 22. The first output terminal 21 is configured to output a radio frequency signal in a first frequency band, and the second output terminal 22 is configured to output a radio frequency signal in a second frequency band. The second frequency band and the first frequency band are different operating frequency bands.

[0105] The substrate 10 is provided with a first signal output port 13. The first output terminal 21 and the second output terminal 22 are connected to the first signal output port 13 through the output matching circuit 40. That is, the first output terminal 21 and the second output terminal 22 of the first filter chip 20 are connected to the same signal output port.

[0106] For example, if the frequency of the first frequency band is lower than the frequency of the second frequency band, the output matching circuit 40 corresponding to the first filter chip 20 includes a first inductor 41, which is connected in series between the first output terminal 21 and the first signal output port 13. The second output terminal 22 is connected to the first signal output port 13. The first output terminal 21 and the second output terminal 22 are connected to the same signal output port. Since the frequency of the first frequency band in which the first output terminal 21 operates is lower than the frequency of the second frequency band in which the second output terminal 22 operates, the inductance required for impedance matching of the first output terminal 21 is larger than the inductance required for impedance matching of the second output terminal 22. By connecting the first inductor 41 in series between the first output terminal 21 and the first signal output port 13, the inductance of the output matching circuit 40 can meet the output matching requirements of both the first and second frequency bands.

[0107] For example, the first metal film 51 is at least partially disposed between the first inductor 41 and the input matching circuit 30. By disposing the first metal film 51 between the first inductor 41 and the input matching circuit 30, the radio frequency signal input to the first filter chip 20 can be isolated from the radio frequency signal output from the first output terminal 21 of the first filter chip 20, preventing coupling interference and improving the signal quality of the radio frequency signal input to the first filter chip 20 and the radio frequency signal output from the first filter chip 20, thereby improving the performance of the radio frequency front-end module.

[0108] For example, such as Figure 7As shown, the output matching circuit 40 corresponding to the first filter chip 20 further includes a first connecting line 42, a second connecting line 43, and a third connecting line 44; the first end of the first inductor 41 is connected to the first output terminal 21 of the first filter chip 20 through the first connecting line 42, and the second end of the first inductor 41 is connected to the first signal output port 13 through the second connecting line 43; the second output terminal 22 of the first filter chip 20 is connected to the first signal output port 13 through the third connecting line 44; the first connecting line 42, the second connecting line 43, and the third connecting line 44 include metal traces and / or bonding wires on the substrate 10. The first connecting line 42, the second connecting line 43, and the third connecting line 44 have inductive characteristics for radio frequency signals and can be used as inductors to perform impedance matching for the radio frequency signals output by the first filter chip 20.

[0109] For example, such as Figure 7 As shown, the first connecting line 42, the second connecting line 43, and the third connecting line 44 are straight lines or broken lines, and the broken lines are open, non-closed lines. Compared to impedance matching by winding a metal coil as an inductor (such as the first inductor 41) on the substrate 10, impedance matching using the first connecting line 42, the second connecting line 43, and the third connecting line 44 occupies less area on the substrate 10, which is beneficial for the miniaturization design of the RF front-end module. By connecting the first inductor 41 in series between the first output terminal 21 and the first signal output port 13, the inductance of the first connecting line 42 and the second connecting line 43 can be supplemented to meet the output impedance matching requirements of the first frequency band.

[0110] For example, the first metal film 51 is at least partially disposed between the input matching circuit 30 (including the second inductor 31 and / or the third inductor 32) and at least one of the connecting lines 42, 43, and 44. By disposing the first metal film 51 between the connecting lines in the input matching circuit 30 and the output matching circuit 40 of the first filter chip 20, the RF signal input to the first filter chip 20 and the RF signal output by the first filter chip 20 can be isolated, preventing coupling interference and improving the signal quality of both the RF signal input to and output by the first filter chip 20, thereby improving the performance of the RF front-end module. Optionally, the first metal film 51 can be disposed on the metal layer where at least one of the connecting lines 42, 43, and 44 is located, or it can be disposed on the metal layer where the input matching circuit 30 and the at least one connecting line are located; this can enhance the isolation effect of the first metal film 51 and save on the number of metal layers occupied. Optionally, the first metal film 51 can also be disposed on a metal layer other than the metal layer where the input matching circuit 30 is located or the metal layer where the first connecting line 42, the second connecting line 43, and the third connecting line 44 are located.

[0111] In some implementation methods, please refer to Figure 7 See Figure 8 The input terminals of the first filter chip 20 include a first input terminal 23 and a second input terminal 24. The first input terminal 23 and the second input terminal 24 are configured to input radio frequency signals of different frequency bands; for example, the first input terminal 23 is configured to input radio frequency signals of the first frequency band, and the second input terminal 24 is configured to input radio frequency signals of the second frequency band.

[0112] The input matching circuit 30 of the first filter chip 20 includes a second inductor 31 and a third inductor 32. The second inductor 31 is connected to the first input terminal 23 and is used for impedance matching of the RF signal input to the first input terminal 23; for example, the fourth matching circuit 94 in the fourth RF signal link includes the second inductor 31. The third inductor 32 is connected to the second input terminal 24 and is used for impedance matching of the RF signal input to the second input terminal 24; for example, the third matching circuit 93 in the third RF signal link includes the third inductor 32. For example, such as... Figure 8 As shown, the second inductor 31 and the third inductor 32 are connected in parallel to their respective input terminals. For example, the first input terminal 23 is grounded through the second inductor 31, and the second input terminal 24 is grounded through the third inductor 32.

[0113] The first metal film 51 is at least partially located between the output matching circuit 40 and the second inductor 31, and / or the first metal film 51 is at least partially located between the output matching circuit 40 and the third inductor 32. For example, the first metal film 51 is at least partially located between the first inductor 41 and the second inductor 31, and / or at least partially located between the first inductor 41 and the third inductor 32, and / or at least partially located between the second inductor 31 and the first connecting line 42, the second connecting line 43, and the third connecting line 44, and / or at least partially located between the third inductor 32 and the first connecting line 42, the second connecting line 43, and the third connecting line 44.

[0114] Optionally, the first metal film 51 can be disposed on the metal layer where the output matching circuit 40 is located, or on the metal layer where the second inductor 31 is located, or on the metal layer where the third inductor 32 is located, or on the metal layer where the output matching circuit 40, the second inductor 31, and / or the third inductor 32 are located; this can enhance the isolation effect of the first metal film 51 and save the number of metal layers occupied. For example, the first metal film 51 can be disposed on the top metal layer of the substrate 10 or on the metal layer inside the substrate 10.

[0115] It should be noted that the first metal films 51 located at different positions can be spaced apart or connected. For example, adjacent first metal films 51 can be integrated. For instance, the first metal films 51 located between the output matching circuit 40 and the third inductor 32, between the first inductor 41 and the second inductor 31, between the first inductor 41 and the third inductor 32, between the second inductor 31 and the first connecting line 42, the second connecting line 43, and the third connecting line 44, and between the third inductor 32 and the first connecting line 42, the second connecting line 43, and the third connecting line 44 can be interconnected. Connecting the first metal films 51 at different positions can improve the isolation effect.

[0116] In some implementations, such as Figure 7 As shown, the input terminal of the first filter chip 20 also includes a third input terminal 25, and the input matching circuit 30 also includes a fourth inductor 33, which is connected to the third input terminal 25. For example, the first matching circuit 91 in the aforementioned first RF signal link includes a fourth inductor 33. For example, as... Figure 8 As shown, the third input terminal 25 is grounded through the fourth inductor 33.

[0117] For example, the distance between the fourth inductor 33 and the output matching circuit 40 is greater than the distance between the second inductor 31 and / or the third inductor 32 and the output matching circuit 40; for example, the distance between the fourth inductor 33 and the output matching circuit 40 is greater than the distance between the second inductor 31 and the output matching circuit 40, or the distance between the fourth inductor 33 and the output matching circuit 40 is greater than the distance between the third inductor 32 and the output matching circuit 40, or the distance between the fourth inductor 33 and the output matching circuit 40 is greater than the distance between the second inductor 31 and the output matching circuit 40 and greater than the distance between the third inductor 32 and the output matching circuit 40. By increasing the distance between the fourth inductor 33 and the output matching circuit 40, the RF signal at the fourth inductor 33 can be prevented from coupling to the signal output area and causing coupling interference to the RF signal output by the first filter chip 20. It can also prevent the RF signal in the signal output area from coupling to the fourth inductor 33 and being input to the first filter chip 20 through the third input terminal 25. Therefore, the signal quality of the RF signal input to the first filter chip 20 and the RF signal output by the first filter chip 20 can be improved, thereby improving the performance of the RF front-end module.

[0118] In some implementations, the third input terminal 25 is configured to output a radio frequency signal in a third frequency band. The frequency of the third frequency band is higher than the frequency of the frequency band corresponding to each of the other input terminals of the first filter chip 20, making it more susceptible to interference. By increasing the distance between the fourth inductor 33 and the output matching circuit 40, the radio frequency signal at the fourth inductor 33 can be more thoroughly prevented from coupling to the signal output area and causing coupling interference to the radio frequency signal output by the first filter chip 20. It can also more thoroughly prevent the radio frequency signal in the signal output area from coupling to the fourth inductor 33 and being input to the first filter chip 20 through the third input terminal 25.

[0119] Optional, such as Figure 7 As shown, the first metal film 51 is at least partially located between the output matching circuit 40 and the fourth inductor 33. For example, the first metal film 51 is at least partially located between the first inductor 41 and the fourth inductor 33, and / or at least partially located between the fourth inductor 33 and the first connecting line 42, the second connecting line 43, and the third connecting line 44; for example, the first metal film 51 is at least partially located between the first inductor 41 and the fourth inductor 33, or the first metal film 51 is at least partially located between the fourth inductor 33 and the first connecting line 42, the second connecting line 43, and the third connecting line 44, or the first metal film 51 is at least partially located between the first inductor 41 and the fourth inductor 33 and also at least partially located between the fourth inductor 33 and the first connecting line 42, the second connecting line 43, and the third connecting line 44. This improves the signal quality of the RF signal input to the first filter chip 20 and the RF signal output by the first filter chip 20, thereby improving the performance of the RF front-end module. Optionally, the first metal film 51 can be disposed on the metal layer where the output matching circuit 40 is located, or on the metal layer where the fourth inductor 33 is located, or on the metal layer where both the output matching circuit 40 and the fourth inductor 33 are located; this can enhance the isolation effect of the first metal film 51 and save the number of metal layers occupied.

[0120] Optional, such as Figure 9 As shown, the first metal film 51 is not provided in the region Z surrounding the fourth inductor 33, and the size of the region Z surrounding the fourth inductor 33 is less than or equal to twice the size of the fourth inductor 33.

[0121] Optionally, the first metal film 51 is not disposed between the fourth inductor 33 and at least one of the other inductors in the input matching circuit 30. For example... Figure 9 As shown, no first metal film 51 is provided between the fourth inductor 33 and the third inductor 32. This is to allow for the placement of other devices or metal traces between the fourth inductor 33 and the third inductor 32.

[0122] In some implementations, the third input terminal 25 is configured to output a radio frequency signal in a third frequency band, the frequency of which is greater than the frequency of the frequency band corresponding to each of the other input terminals of the first filter chip 20; and / or the number of frequency bands aggregated with the third frequency band (Carrier Aggregation, CA) is greater than the number of frequency bands aggregated with the other input terminals; for example, the third input terminal 25 is configured to output a radio frequency signal in a third frequency band, the frequency of which is greater than the frequency of the frequency band corresponding to each of the other input terminals of the first filter chip 20; or the number of frequency bands aggregated with the third frequency band (Carrier Aggregation, CA) is greater than the number of frequency bands aggregated with the other input terminals; or the third input terminal 25 is configured to output a radio frequency signal in a third frequency band, the frequency of which is greater than the frequency of the frequency band corresponding to each of the other input terminals of the first filter chip 20, and the number of frequency bands aggregated with the third frequency band (Carrier Aggregation, CA) is greater than the number of frequency bands aggregated with the other input terminals. The distance between the fourth inductor 33 and the first filter chip 20 is greater than the distance between the inductors corresponding to each of the other input terminals in the input matching circuit 30 (such as the second inductor 31 and the third inductor 32) and the first filter chip 20. Optionally, the distance between the inductor and the chip can be the distance between the two closest points of the inductor and the chip, or it can be the distance between the center of the inductor and the center of the chip.

[0123] Carrier aggregation combines multiple frequency bands, enabling the RF front-end module to transmit data simultaneously across multiple bands, thereby achieving higher data throughput. However, during carrier aggregation, signals from different frequency bands are received or transmitted simultaneously, which can easily lead to crosstalk. In this embodiment, the fourth inductor 33 corresponding to the third frequency band of the multi-band carrier aggregation is positioned away from the first filter chip 20, which can reduce crosstalk between the RF signal at the fourth inductor 33 and other RF signals corresponding to the first filter chip 20.

[0124] For example, such as Figure 7 and Figure 8 As shown, the first filter chip 20 includes at least a fourth filter 241 corresponding to the first input terminal 23, a third filter 231 corresponding to the second input terminal 24, and a first filter 211 corresponding to the third input terminal 25; the third frequency band corresponding to the third input terminal 25 is at least carrier-aggregated with the first frequency band corresponding to the first input terminal 23.

[0125] It should be noted that the third frequency band corresponding to the third input terminal 25 has a relatively high frequency, and / or the number of frequency bands requiring carrier aggregation is greater, making the radio frequency signal of the third frequency band more prone to crosstalk with other radio frequency signals. By increasing the distance between the fourth inductor 33 and the first filter chip 20, the crosstalk between the radio frequency signal at the fourth inductor 33 and other radio frequency signals corresponding to the first filter chip 20 can be reduced, thereby improving the performance of the radio frequency front-end module.

[0126] The third frequency band corresponding to the third input terminal 25 is at least carrier-aggregated with the first frequency band corresponding to the first input terminal 23, and the second frequency band corresponding to the second input terminal 24 is neither carrier-aggregated with the first frequency band corresponding to the first input terminal 23 nor with the third frequency band corresponding to the third input terminal 25. Optionally, at least the third filter 231 corresponding to the second input terminal 24 is disposed between the fourth filter 241 corresponding to the first input terminal 23 and the first filter 211 corresponding to the third input terminal 25. By setting filters that do not participate in the carrier aggregation among the multiple filters of the carrier aggregation, the multiple filters of the carrier aggregation can be isolated, and the distance between the multiple filters of the carrier aggregation can be increased, which can reduce the crosstalk of radio frequency signals between different filters of the carrier aggregation, thereby improving the performance of the radio frequency front-end module.

[0127] The third frequency band corresponding to the third input terminal 25 is aggregated with the carrier of the first frequency band corresponding to the first input terminal 23 at least. The second frequency band corresponding to the second input terminal 24 is not aggregated with the carrier of the first frequency band corresponding to the first input terminal 23 and is not aggregated with the carrier of the third frequency band corresponding to the third input terminal 25. Optionally, the distance between the fourth inductor 33 corresponding to the third input terminal 25 and the second inductor 31 corresponding to the first input terminal 23 is greater than the distance between the second inductor 31 corresponding to the first input terminal 23 and the third inductor 32 corresponding to the second input terminal 24, and is also greater than the distance between the fourth inductor 33 corresponding to the third input terminal 25 and the third inductor 32 corresponding to the second input terminal 24. For example, at least the third filter 231 is disposed between the fourth filter 241 and the first filter 211, and the distance between the fourth inductor 33 and the second inductor 31 is greater than the distance between the second inductor 31 and the third inductor 32, and is also greater than the distance between the fourth inductor 33 and the third inductor 32.

[0128] By increasing the distance between the input matching inductors corresponding to the multiple filters of carrier aggregation (such as the fourth inductor 33 and the second inductor 31), crosstalk of RF signals between the input matching inductors corresponding to different filters of carrier aggregation can be reduced, thereby improving the performance of the RF front-end module.

[0129] In some implementations, such as Figure 7As shown, the grounding metal film 50 also includes a second metal film 52, which is at least partially disposed between the second inductor 31 and the third inductor 32. For input matching inductors corresponding to filters of different frequency bands, the second metal film 52 can isolate the input matching inductors corresponding to different frequency bands, preventing crosstalk between input matching inductors of different frequency bands, thereby improving the performance of the RF front-end module. Optionally, the second metal film 52 can be disposed on the metal layer where the second inductor 31 is located, or on the metal layer where the third inductor 32 is located, or on the metal layers where both the second inductor 31 and the third inductor 32 are located; this can enhance the isolation effect of the first metal film 51 and save on the number of metal layers occupied. Optionally, the second metal film 52 can also be disposed on a metal layer other than the metal layer where the second inductor 31 or the metal layer where the third inductor 32 is located, for example, to facilitate the connection of metal traces to the input terminal of the filter on the metal layer where the second inductor 31 or the metal layer where the third inductor 32 is located.

[0130] In some embodiments, the inductors in the input matching circuit 30 (such as the second inductor 31, the third inductor 32, and the fourth inductor 33) and / or the inductors in the output matching circuit 40 (such as the first inductor 41) include metal trace inductors formed on one or more metal layers of the substrate 10. Exemplarily, the number of turns of the metal trace inductor is greater than or equal to 1.

[0131] For example, a first metal film 51 is formed on at least one metal layer containing the inductors in the input matching circuit 30 and / or the output matching circuit 40, and the first metal film 51 is spaced apart from the inductors in the input matching circuit 30 and / or the output matching circuit 40; for example, the first metal film 51 can be disposed on the metal layer containing the output matching circuit 40, or on the metal layer containing the second inductor 31, or on the metal layer containing the third inductor 32, or on the metal layer containing both the output matching circuit 40 and the second inductor 31 and / or the third inductor 32. This can enhance the isolation effect of the first metal film 51 and save on the number of metal layers required.

[0132] For example, the first metal film 51 and the second metal film 52 can be disposed on the top metal layer of the substrate 10 or on the metal layer inside the substrate 10. For example, the first metal layer is disposed on the first surface of the top layer of the substrate 10, and the inductor in the input matching circuit 30 and / or the inductor in the output matching circuit 40 is disposed at least on the first metal layer; the first metal film 51 and the second metal film 52 can be formed on the first metal layer. In some embodiments, the first metal film 51 and the second metal film 52 are not disposed on other metal layers below the metal layer where the inductor in the input matching circuit 30 and / or the inductor in the output matching circuit 40 is located, in the region corresponding to the inductor, so as to reduce the mutual interference between the inductor and other adjacent circuits and improve the anti-interference capability.

[0133] The metal layers corresponding to the inductors in the input matching circuit 30 and / or the output matching circuit 40 form a first metal film 51 for isolation, which can enhance the isolation effect of the first metal film 51 and save the number of metal layers occupied.

[0134] In some implementations, such as Figure 7 As shown, the first metal thin film 51 is at least partially located between the input terminal and the output terminal of the first filter chip 20.

[0135] For the input and output terminals of the same filter chip, isolation is achieved by grounding the first metal film 51, which can improve the signal quality of the RF signal input to the first filter chip 20 and the RF signal output by the first filter chip 20, thereby improving the performance of the RF front-end module.

[0136] For example, such as Figure 7 As shown, the input terminals (such as the first input terminal 23, the second input terminal 24, and the third input terminal 25) of the first filter chip 20 are disposed within the first filter chip 20 along the first side (such as the left side), and the output terminals (such as the first output terminal 21, the second output terminal 22, and the third output terminal corresponding to the third input terminal 25) of the first filter chip 20 are disposed within the first filter chip 20 along the second side (such as the right side), wherein the first side and the second side are two opposing sides; the first metal film 51 is at least partially located between the projection of the first side of the first filter chip 20 onto the substrate 10 and the projection of the second side of the first filter chip 20 onto the substrate 10.

[0137] For example, a first metal layer is disposed on the first surface of the substrate 10, and the input and output terminals of the first filter chip 20 are connected to the first metal layer; a first metal thin film 51 is at least partially disposed on the first metal layer and is located between the region corresponding to the input terminal of the first filter chip 20 and the region corresponding to the output terminal of the first filter chip 20.

[0138] For example, the first filter chip 20 is a surface mount device (SMD). The area between the input and output ends of the surface of the first filter chip 20 facing the substrate 10 may not have other ports. A first metal film 51 may be provided on the first metal layer at a position corresponding to this area to isolate the input and output ends of the first filter chip 20.

[0139] In some embodiments, the projection of the input matching circuit 30 along a first preset direction does not at least partially coincide with the projection of the output matching circuit 40 along the first preset direction; and / or, the projection of the input matching circuit 30 along a second preset direction does not coincide with the projection of the output matching circuit 40 along the second preset direction; the first preset direction is parallel to the first side of the substrate 10, the second preset direction is parallel to the second side of the substrate 10, and the first side and the second side of the substrate 10 are adjacent. For example, the first preset direction and the second preset direction are perpendicular to each other.

[0140] For example, such as Figure 7 As shown, the projections of the first inductor 41 and the second inductor 31 of the fourth filter 241 in the first filter chip 20 along the first preset direction do not coincide, and their projections along the second preset direction also do not coincide. That is, the positions of the first inductor 41 and the second inductor 31 on the substrate 10 are staggered. Compared to the input matching inductor and output matching inductor of the same filter being arranged along a certain preset direction, the staggered arrangement of the input matching inductor and output matching inductor on the substrate 10 can reduce the coupling between the input matching inductor and the output matching inductor, reduce signal crosstalk between the matching inductor and the output matching inductor, and thus improve the performance of the RF front-end module.

[0141] In some embodiments, the input matching circuit 30 is positioned close to the input terminal of the first filter chip 20, which can shorten the trace length between the input matching circuit 30 and the first filter chip 20, thereby reducing the transmission loss of the radio frequency signal and reducing parasitic impedance and interference. Optionally, the grounding metal film 50 is at least partially located between the input matching circuit 30 and the first filter chip 20 to reduce signal crosstalk between the input matching circuit 30 and the first filter chip 20.

[0142] In some implementations, such as Figure 9As shown, the filter chip also includes a second filter chip 60 and a matching circuit 70 connected to the second filter chip 60. For example, the matching circuit 70 includes a second matching circuit 92 corresponding to the second radio frequency signal link. The ground metal film 50 also includes a third metal film 53. The third metal film 53 is at least partially located between the third region 15 and the first region 11 of the substrate 10, and / or the third metal film 53 is at least partially located between the third region 15 and the second region 12 of the substrate 10. The third region 15 is the region corresponding to the second filter chip 60 and / or the matching circuit 70 connected to the second filter chip 60.

[0143] By setting a grounded third metal film 53 between the signal input areas corresponding to different filter chips and / or between the signal input area and the signal output area, the areas corresponding to different filter chips can be isolated. This can prevent the RF signals of different filter chips and their matching circuits 70 from coupling with each other and causing coupling interference, thereby improving the signal quality of the RF signals corresponding to each filter chip and thus improving the performance of the RF front-end module.

[0144] like Figure 10 As shown, the radio frequency front-end module includes: a substrate 10, a first filter chip 20 and a fifth matching circuit 201 connected to the first filter chip 20, a second filter chip 60 and a sixth matching circuit 601 connected to the second filter chip 60.

[0145] The first filter chip 20 and the fifth matching circuit 201 are disposed in the first substrate region 101 of the substrate 10, and the second filter chip 60 and the sixth matching circuit 601 are disposed in the second substrate region 102 of the substrate 10; wherein, a grounding metal film 50 for grounding is disposed on the substrate 10; the grounding metal film 50 is at least partially located between the first substrate region 101 and the second substrate region 102.

[0146] In some embodiments, the fifth matching circuit 201 includes an input matching circuit (such as an input matching inductor) connected to the input terminal of the first filter chip 20, and the first substrate region 101 includes at least the first region 11 of the substrate 10.

[0147] Optionally, the fifth matching circuit 201 further includes an output matching circuit (such as an output matching inductor) connected to the output terminal of the first filter chip 20; the grounded metal film 50 is at least partially located between the output matching circuit and the input matching circuit of the first filter chip 20. The first substrate region 101 may also include a second region 12 of the substrate 10.

[0148] The second substrate region 102 of the substrate 10 can also be referred to as the third region 15 of the substrate 10.

[0149] The sixth matching circuit 601 connected to the second filter chip 60 includes at least an input matching circuit (such as an input matching inductor) connected to the input terminal of the second filter chip 60. Optionally, the sixth matching circuit 601 may include an output matching circuit (such as an output matching inductor) connected to the output terminal of the second filter chip 60, or it may not include an output matching circuit connected to the output terminal of the second filter chip 60.

[0150] Among them, such as Figure 10 As shown, the grounded metal film 50 is at least partially located between the input matching circuit connected to the input terminal of the first filter chip 20 and the input matching circuit connected to the input terminal of the second filter chip 60.

[0151] Please refer to the foregoing embodiments. Figure 11 ,like Figure 11 The diagram shown is a schematic block diagram of an electronic device according to an embodiment of this application. The electronic device includes the aforementioned radio frequency front-end module.

[0152] The electronic device can be a mobile phone, tablet computer, vehicle terminal, or other communication device. Of course, it can also be other communication devices with communication functions. The embodiments of this application do not limit the specific types of electronic devices.

[0153] The specific principles and implementation methods of the electronic devices provided in this application are similar to those of the radio frequency front-end modules in the aforementioned embodiments, and will not be repeated here.

[0154] It should be understood that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the scope of the application.

[0155] It should be understood that when an element or layer is referred to as "on," "adjacent to," "connected to," or "coupled to" other elements or layers, it may be directly on, adjacent to, connected to, or coupled to other elements or layers, or there may be intervening elements or layers. Conversely, when an element is referred to as "directly on," "directly adjacent to," "directly connected to," or "directly coupled to" other elements or layers, there are no intervening elements or layers. It should be understood that although the terms first, second, third, etc., may be used to describe various elements, components, areas, layers, and / or portions, these elements, components, areas, layers, and / or portions should not be limited by these terms. These terms are only used to distinguish one element, component, area, layer, or portion from another element, component, area, layer, or portion. Therefore, without departing from the teachings of this application, the first element, component, area, layer, or portion discussed below may be referred to as a second element, component, area, layer, or portion.

[0156] Spatial relation terms such as “below,” “under,” “below,” “under,” “above,” “above,” etc., are used herein for convenience of description to describe the relationship between one element or feature shown in the figure and other elements or features. It should be understood that, in addition to the orientation shown in the figure, spatial relation terms are intended to also include different orientations of the device in use and operation. For example, if the device in the figure is flipped, then the element or feature described as “below,” “under,” or “below” other elements or features will be oriented “above” other elements or features. Therefore, the exemplary terms “below” and “under” can include both above and below orientations. The device may be otherwise oriented (rotated 90 degrees or otherwise) and the spatial descriptive terms used herein will be interpreted accordingly.

[0157] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the scope of this application. When used herein, the singular forms “a,” “an,” and “the” are also intended to include the plural forms unless the context clearly indicates otherwise. It should also be understood that the terms “comprising” and / or “including,” when used in this specification, identify the presence of the stated features, integers, steps, operations, elements, and / or components, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups. When used herein, the term “and / or” includes any and all combinations of the associated listed items.

[0158] The above description is merely a specific embodiment of this application, but the scope of protection of this application is not limited thereto. Any person skilled in the art can easily conceive of various equivalent modifications or substitutions within the technical scope disclosed in this application, and these modifications or substitutions should all be covered within the scope of protection of this application. Therefore, the scope of protection of this application should be determined by the scope of the claims.

Claims

1. A radio frequency front-end module, characterized in that, The radio frequency front-end module includes: substrate; A first radio frequency (RF) signal link, a second RF signal link, and a third RF signal link are disposed on the substrate. The first RF signal link includes a first filter and a first matching circuit. The second RF signal link includes a second filter and a second matching circuit. The third RF signal link includes a third filter and a third matching circuit. The first RF signal link and the second RF signal link can transmit RF signals simultaneously. The third RF signal link transmits RF signals with the first RF signal link and the second RF signal link at different times. Switching chip; Wherein, the distance between the first filter and the second filter is greater than the distance between the third filter and the first filter; and the distance between the first filter and the second filter is greater than the distance between the third filter and the second filter; and / or The distance between the first matching circuit and the second matching circuit is greater than the distance between the third matching circuit and the first matching circuit; and the distance between the first matching circuit and the second matching circuit is greater than the distance between the third matching circuit and the second matching circuit. Wherein, the first RF signal link, the second RF signal link, and the third RF signal link are all RF receiving links; the RF front-end module includes at least two first RF signal links, the at least two first RF signal links including a first RF signal link in a first operating frequency band and a first RF signal link in a second operating frequency band, and the first operating frequency band is higher than the second operating frequency band, and / or the bandwidth of the first operating frequency band is greater than the bandwidth of the second operating frequency band, and / or the first RF signal link in the first operating frequency band can also simultaneously transmit RF signals with at least one RF signal link other than the second RF signal link; the projection of the switching chip on the first straight line is at least partially located between the projection of the first matching circuit corresponding to the first operating frequency band on the first straight line and the projection of the second matching circuit on the first straight line; the projection of the first matching circuit corresponding to the second operating frequency band on the first straight line is at least partially coincident with the projection of the switching chip on the first straight line; wherein, the first straight line is parallel to the side of the switching chip.

2. The radio frequency front-end module according to claim 1, characterized in that, The first filter and the third filter are disposed on a first filter chip. The first filter chip includes a first end and a second end disposed opposite to each other, and the first filter is disposed closer to the first end of the first filter chip than the third filter. The second filter is disposed on the second filter chip, the second filter chip is disposed at an interval from the first filter chip, and the second end of the first filter chip is closer to the second filter chip than the first end of the first filter chip.

3. The radio frequency front-end module according to claim 1, characterized in that, The first filter is disposed on the first filter chip, the second filter is disposed on the second filter chip, and the third filter is disposed on the third filter chip; The distance between the first filter chip and the second filter chip is greater than the distance between the third filter chip and the first filter chip and the distance between the third filter chip and the second filter chip.

4. The radio frequency front-end module according to claim 2, characterized in that, The projection of the first filter chip along the first direction does not coincide with the projection of the second filter chip along the first direction at least partially; and / or, the projection of the first filter chip along the second direction does not coincide with the projection of the second filter chip along the second direction. The first direction is parallel to the first side of the substrate, the second direction is parallel to the second side of the substrate, and the first side and the second side of the substrate are adjacent to each other.

5. The radio frequency front-end module according to any one of claims 1-4, characterized in that, The RF front-end module further includes a fourth RF signal link, which is capable of transmitting RF signals simultaneously with the first RF signal link; the fourth RF signal link includes a fourth filter, which is disposed on the first filter chip along with the first filter. The first filter chip includes a first end and a second end disposed opposite to each other, the first filter is disposed at the first end of the first filter chip, and the fourth filter is disposed at the second end of the first filter chip; and / or On the first filter chip, at least one filter is disposed between the first filter and the fourth filter.

6. The radio frequency front-end module according to claim 5, characterized in that, The operating frequency band of the first radio frequency signal link is higher than that of the fourth radio frequency signal link, and the first end of the first filter chip is located further away from the other filter chips on the substrate than the second end of the first filter chip.

7. The radio frequency front-end module according to any one of claims 1-4, characterized in that, At least one matching circuit for the radio frequency signal link is disposed between the first filter and the second filter.

8. The radio frequency front-end module according to any one of claims 1-4, characterized in that, At least one matching circuit is provided between the first matching circuit and the second matching circuit, wherein the at least one matching circuit is a matching circuit for an RF signal link other than the first RF signal link and the second RF signal link.

9. The radio frequency front-end module according to claim 8, characterized in that, The first matching circuit includes a first input matching circuit, the second matching circuit includes a second input matching circuit, and the third matching circuit includes a third input matching circuit; each input matching circuit is connected to the input terminal of the corresponding filter. The third input matching circuit is disposed between the first input matching circuit and the second input matching circuit.

10. The radio frequency front-end module according to claim 8, characterized in that, The projection of the at least one matching circuit along the first direction is at least partially located between the projections of the first matching circuit and the second matching circuit along the first direction; and / or The projection of the at least one matching circuit along the second direction is at least partially located between the projections of the first matching circuit and the second matching circuit along the second direction, the second direction intersecting the first direction; The first direction is parallel to one side of the substrate.

11. The radio frequency front-end module according to any one of claims 1-4, characterized in that, The RF front-end module further includes an antenna port. The switching chip includes at least a first switching path, a second switching path, and a third switching path. The first switching path is connected between the antenna port and the first filter, the second switching path is connected between the antenna port and the second filter, and the third switching path is connected between the antenna port and the third filter. The switching chip is used to activate the corresponding switching path according to the frequency band of the RF signal received by the antenna port, so as to transmit the received RF signal to the filter corresponding to the activated switching path.

12. The radio frequency front-end module according to claim 11, characterized in that, The switch chip is rectangular and includes a first side and a second side opposite to each other, and a third side adjacent to the first side and the second side. The length of the third side is greater than the length of the first side and the length of the second side. The first straight line is parallel to the third side.

13. The radio frequency front-end module according to any one of claims 1-4, characterized in that, The distance between different filters includes: the distance between the input terminals of different filters, and / or the distance between the output terminals of different filters; The distance between different matching circuits includes: the distance between the input terminals of different matching circuits, and / or the distance between the output terminals of different matching circuits, and / or the distance between the centers of different matching circuits.

14. The radio frequency front-end module according to any one of claims 1-4, characterized in that, The RF front-end module further includes a fourth RF signal link, which can transmit RF signals simultaneously with the first RF signal link. The fourth RF signal link includes a fourth filter and a fourth matching circuit. The fourth filter and the first filter of the first RF signal link are disposed on a first filter chip. The first matching circuit and the fourth matching circuit are located on different sides of the first filter chip.

15. The radio frequency front-end module according to claim 14, characterized in that, The projection of the first filter chip along the first direction is at least partially located between the projections of the first matching circuit and the fourth matching circuit along the first direction; and / or The projection of the first filter chip along the second direction is at least partially located between the projections of the first matching circuit and the fourth matching circuit along the second direction, and the second direction intersects the first direction; The first direction is parallel to one side of the substrate.

16. An electronic device, characterized in that, The electronic device includes the radio frequency front-end module as described in any one of claims 1 to 14.

Images