Large-size OLED panel manufacturing system and method

Abstract

The invention discloses a large-size OLED panel manufacturing system and method.The system comprises a face evaporation source, running tracks, a panel isolation plate, an OLED panel and a mask, the forward and reverse running tracks are arranged below the OLED panel, and the large-size panel is manufactured through the movable face evaporation source technology; the problems that evaporation sources are fixed, color cast is caused, the process repeatability is poor, the alignment precision is low, and the productivity is low are solved, and cross contamination between panels and cross contamination between sources are eliminated by arranging the isolation plates. A plurality of large-area evaporation sources can be used, different materials can be loaded, evaporation of various materials on a plurality of panels is completed, cooperation of all internal mechanisms is coordinated, manufacturing flexibility and high efficiency are achieved, and the coverage range of the sizes of the panels capable of being manufactured is wide.

Description

Technical Field

[0001] The present invention belongs to the technical field of OLED panels, and in particular relates to a large-size OLED panel manufacturing system and method. Background Art

[0002] In the current display technology environment, LCD occupies the majority of the market, especially in large-size panel applications. In recent years, display technologies such as QLED, Micro LED and OLED have emerged, and it is difficult to distinguish the superiority, but it is still difficult to shake the dominant position of LCD. In essence, LCD and QLED are still display technologies that require backlight sources and cannot be thin and light. QLED is still in its infancy. Key technologies such as mass transfer applied to Micro LED still need to be further explored, and it is difficult to replace LCD and become the new favorite in the display industry in the short term.

[0003] OLED's self-luminous properties allow the display panel to be thin and light. It is a relatively mature new display technology besides LCD. Under-screen fingerprint recognition and flexible display are expected to make deep breakthroughs in OLED. However, OLED is currently mainly used on small-size panels. Key technologies for producing large-size panels, such as organic printing, have not made significant progress, and the yield rate of large-size OLED panels is still very low. At present, the organic light-emitting layer of small-size OLED panels adopts fixed-source evaporation technology, which has a small evaporation area and a large evaporation angle. If this technology is applied to the evaporation of the organic layer of large-size OLED panels, its process repeatability is poor and the efficiency is very low. The uneven film thickness is bound to cause problems such as color coordinate offset and inconsistent driving voltage. Furthermore, large-size panels with mechanical transmission have higher requirements on cavity size and alignment accuracy, and will also cause cross-contamination. Therefore, fixed-source evaporation technology is not the best choice for making large-size OLED panels. Summary of the invention

[0004] In view of this, the present invention provides a large-size OLED panel manufacturing system, including a surface evaporation source, a running track, a panel isolation plate, an OLED panel and a mask, wherein:

[0005] The surface evaporation sources are provided in plurality, loaded with the same or different evaporation materials, and the surface evaporation sources move forward or backward along the running track;

[0006] The running track includes a plurality of U-shaped tracks, and the plurality of U-shaped tracks form an S-shaped running track;

[0007] The OLED panels are provided in plurality and placed on the running track, and are evaporated by a movable surface evaporation source.

[0008] The mask is arranged below the OLED panel and is used as a mask when the surface evaporation source evaporates the OLED panel;

[0009] The panel isolation plate is arranged between the OLED panels to isolate the vapor deposition materials of adjacent OLED panels.

[0010] Preferably, the OLED panel is 6-100 inches.

[0011] Preferably, the size of the mask is larger than that of the OLED panel.

[0012] Preferably, the length of the surface evaporation source is greater than the width of the mask, and the position of the surface evaporation source is lower than the position of the mask.

[0013] Preferably, the distance between the OLED panel and the mask is 0.2 μm-10 μm, and the distance between the mask and the surface evaporation source is 200 mm-800 mm.

[0014] Preferably, the height of the panel isolation plate is 300mm-900mm.

[0015] Based on the above purpose, the present invention also provides a large-size OLED panel manufacturing method. Based on the above large-size OLED panel manufacturing system, the manufacturing method includes the following steps:

[0016] Take several OLED panels of the same or different sizes, each of which has anodes made, and place them on the running track after pre-treatment, matching the mask of the corresponding size, the distance between the OLED panel and the mask is the first preset distance, the distance between the mask and the surface evaporation source is the second preset distance, and the height of the panel isolation plate is the third preset distance;

[0017] The light-emitting structure of the OLED panel includes anode / hole injection layer / organic light-emitting layer / electron injection layer / cathode;

[0018] The hole injection layer material is loaded in the first surface evaporation source, and after starting, it moves along the running track to complete the hole injection layer evaporation of the OLED panel;

[0019] Replace the mask, reload the mask and position it;

[0020] The organic light-emitting layer material is loaded in the second surface evaporation source, and after starting, it moves along the running track to complete the evaporation of the organic light-emitting layer of the OLED panel;

[0021] Replace the mask, reload the mask and position it;

[0022] The electron injection layer material is loaded in the third surface evaporation source, and after starting, it moves along the running track to complete the electron injection layer evaporation of the OLED panel;

[0023] Replace the mask, reload the mask and position it;

[0024] The cathode material is loaded into the fourth surface evaporation source, which is started and moves along the running track to complete the cathode evaporation of the OLED panel.

[0025] Preferably, the pre-evaporated OLED panel is a top-emitting structure with 7 light-emitting film layers, and includes the following steps:

[0026] S11, select three OLED panels C01, C02, and C03 with a size of 1950×2250 (mm). The anode of the OLED panels has been made. After pre-treatment, they are aligned and placed on the running track. The corresponding masks B01, B02, and B03 are matched. The distance between the OLED panel and the mask is 5μm, the distance between the mask and the surface evaporation source is 400mm, and the height of the isolation plate is 500mm.

[0027] S21, the light-emitting structure used in the OLED panel is: anode / Hole injection layer (HIL, ) / hole transport layer (HTL, ) / organic light emitting layer (EML, ) / Electron Transport Layer (ETL, ) / Electron Injection Layer (ETL, ) / cathode

[0028] S31, the hole injection layer material CuPC (copper phthalocyanine) or TiOPC (titanium phthalocyanine) is loaded in the surface evaporation source A01, and after starting, the hole injection layer evaporation of the OLED panels C01, C02, and C03 is completed in sequence along the forward running path of the U-shaped tracks D01 and D02. The film thickness is

[0029] S41, replace the masks B01, B02, B03, load the masks B04, B05, B06, and realign them;

[0030] S51, load the hole transport layer material TPD [N,N'-diphenyl-N,N'-di(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine] or NPB [N,N'-diphenyl-N,N'-(1-naphthyl)-1,1'-biphenyl-4,4'-diamine] in the surface evaporation source A02, and after starting, complete the hole transport layer evaporation of OLED panels C01, C02, and C03 in turn along the forward running path of U-shaped tracks D01 and D02. The film thickness is

[0031] S61, replace masks B04, B05, B06, load masks B07, B08, B09, and realign;

[0032] S71, load the organic light-emitting layer material Alq3 (8-hydroxyquinoline aluminum) or TBADN [2-tert-butyl-9,10-di(2-naphthyl)anthracene] in the surface evaporation source A03, start it, and complete the organic light-emitting layer evaporation of OLED panels C01, C02, and C03 in sequence along the forward running path of U-shaped tracks D01 and D02. The film thickness is

[0033] S81, replace masks B07, B08, B09, load masks B10, B11, B12, and realign;

[0034] S91, load the electron transport layer material PBD [2-(4-biphenyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole] or TAZ [3-(biphenyl-4-yl)-5-(4-tert-butylphenyl)-4-phenyl-4H-1,2,4-triazole] in the surface evaporation source A04, and after starting, complete the electron transport layer evaporation of OLED panels C01, C02, and C03 in sequence along the forward running path of U-shaped tracks D01 and D02. The film thickness is

[0035] S101, replace masks B10, B11, B12, load masks B13, B14, B15, and realign;

[0036] S111, load the electron injection layer material LiF or MgP in the surface evaporation source A05, start it and complete the electron injection layer evaporation of OLED panels C01, C02, C03 in sequence along the forward running path of U-shaped tracks D01 and D02, and the film thickness is

[0037] S121, replace masks B13, B14, B15, load masks B16, B17, B18, and realign;

[0038] S131, load cathode layer material Al or Li in the surface evaporation source A06, start and complete cathode layer evaporation of OLED panels C01, C02, C03 in sequence along the forward running path of U-shaped tracks D01 and D02, and the film thickness is

[0039] Preferably, the pre-evaporated OLED panel is a top-emitting structure with 8 light-emitting film layers, and includes the following steps:

[0040] S12, select 4 OLED panels C01, C02, C03, C04 with a size of 730×920 (mm), the anode of the OLED panels has been made, and they are placed on the running track after pre-treatment, and matched with the corresponding masks B01, B02, B03, B04. The distance between the OLED panel and the mask is 0.5μm, the distance between the mask and the surface evaporation source is 300mm, and the height of the isolation plate is 350mm;

[0041] S22, the light-emitting structure selected for the OLED panel is: anode / Hole injection layer (HIL, ) / hole transport layer (HTL, ) / organic light emitting layer (EML, ) / hole blocking layer (HBL, ) / Electron Transport Layer (ETL, ) / Electron Injection Layer (ETL, ) / cathode

[0042] S32, loading the hole injection layer material m-MTDATA [4,4',4'-tri(N-3-methylphenyl-N-phenylamino)triphenylamine] or 2-TNATA [4,4',4'-tri(2-naphthylphenylamino)triphenylamine] in the surface evaporation source A01, and after starting, completing the hole injection layer evaporation of OLED panels C01, C02, C03, and C04 in sequence along the forward running path of the U-shaped tracks D01 and D02, with a film thickness of

[0043] S42, replace the masks B01, B02, B03, B04, load the masks B05, B06, B07, B08, and realign them;

[0044] S52, load the hole transport layer material PVK [poly (9-vinyl carbazole)] or TPD [N, N'-diphenyl-N, N'-di (3-methylphenyl) -1, 1'-biphenyl-4, 4'-diamine] in the surface evaporation source A02, and after starting, complete the hole transport layer evaporation of OLED panels C01, C02, C03, and C04 in turn along the forward running path of the U-shaped tracks D01 and D02. The film thickness is

[0045] S62, replace masks B05, B06, B07, B08, load masks B09, B10, B11, B12, and realign;

[0046] S72, load the organic light-emitting layer material (8-hydroxyquinoline aluminum) or TBADN [2-tert-butyl-9,10-di(2-naphthyl)anthracene] in the surface evaporation source A03, start it, and complete the organic light-emitting layer evaporation of OLED panels C01, C02, C03, and C04 in sequence along the forward running path of U-shaped tracks D01 and D02. The film thickness is

[0047] S82, replace masks B09, B10, B11, B12, load masks B13, B14, B15, B16, and realign;

[0048] S92, load the hole blocking layer material Bphen (4,7-diphenyl-1,10-phenanthroline) or TPBi [1,3,5-tri(1-phenyl-1H-benzimidazol-2-yl)benzene] in the surface evaporation source A04, and after starting, complete the hole blocking layer evaporation of OLED panels C01, C02, C03, and C04 in sequence along the forward running path of the U-shaped tracks D01 and D02, with a film thickness of

[0049] S102, replace the masks B13, B14, B15, B16, load the masks B17, B18, B19, B20, and realign them;

[0050] S112, loading the electron transport layer material OXD {2,2'-(1,3-phenyl)bis[5-(4-tert-butylphenyl)-1,3,4-oxadiazole]} or DPVBi [4,4'-bis(2,2-diphenylvinyl)-1,1'biphenyl] in the surface evaporation source A05, and after starting, completing the electron transport layer evaporation of OLED panels C01, C02, C03, and C04 in sequence along the forward running path of the U-shaped tracks D01 and D02, with a film thickness of

[0051] S122, replace masks B17, B18, B19, B20, load masks B21, B22, B23, B24, and realign;

[0052] S132, load the electron injection layer material MgF or Al2O3 in the surface evaporation source A06, start it and complete the electron injection layer evaporation of OLED panels C01, C02, C03, C04 in sequence along the forward running path of U-shaped tracks D01 and D02, and the film thickness is

[0053] S142, replace masks B21, B22, B23, B24, load masks B25, B26, B27, B28, and realign;

[0054] S152, load cathode layer material Mg / Ag or ITO in the surface evaporation source A07, start and complete cathode layer evaporation of OLED panels C01, C02, C03, C04 in sequence along the forward running path of U-shaped tracks D01 and D02, and the film thickness is

[0055] Preferably, the pre-evaporated OLED panel is a top-emitting structure with 5 light-emitting film layers, and includes the following steps:

[0056] S13, select a 1300×1500 (mm) panel C02 and a 680×880 (mm) OLED panel C01. The anode of the OLED panel has been made. After pre-treatment, C02 is placed between the U-shaped tracks D02 and D01, and C01 is placed in front of the U-shaped track D01. Match the corresponding masks B02 and B01. The distance between the OLED panel and the mask is 0.8μm, the distance between the mask and the surface evaporation source is 300mm, and the height of the isolation plate is 350mm;

[0057] S23, the light-emitting structure selected for the OLED panel is: anode / Hole injection layer (HIL, ) / organic light emitting layer (EML, ) / Electron Injection Layer (ETL, ) / cathode

[0058] S33, load the hole injection layer material m-MTDATA [4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine] or TiOPC (phthalocyanine titanium oxide) in the surface evaporation source A01, start it and run it in reverse along the U-shaped track D02 to the U-shaped track D01 to complete the hole injection layer evaporation on the OLED panel C02, adjust the opening size of the surface evaporation source A01, run it in reverse along the U-shaped track D01 to the starting point of the track, complete the hole injection layer evaporation on the OLED panel C01, and the film thickness is

[0059] S43, replace the masks B02 and B01, load the masks B04 and B03, and realign them;

[0060] S53, load the organic light-emitting layer material Alq3 (8-hydroxyquinoline aluminum) or TBADN [2-tert-butyl-9,10-di(2-naphthyl)anthracene] in the surface evaporation source A02, start it and run it in reverse along the U-shaped track D02 to the U-shaped track D01 to complete the evaporation of the organic light-emitting layer of the OLED panel C02, adjust the opening size of the surface evaporation source A02, run it in reverse along the U-shaped track D01 to the starting point of the track, complete the evaporation of the organic light-emitting layer of the OLED panel C01, and the film thickness is

[0061] S63, replace masks B04 and B03, load masks B06 and B05, and realign;

[0062] S73, load the electron injection layer material LiF or MgF in the surface evaporation source A03, start it and run it in reverse along the U-shaped track D02 to the U-shaped track D01, complete the electron injection layer evaporation of the OLED panel C02, adjust the opening size of the surface evaporation source A03, run it in reverse along the U-shaped track D01 to the track starting point, complete the electron injection layer evaporation of the OLED panel C01, and the film thickness is

[0063] S83, replace masks B06 and B05, load masks B08 and B07, and realign;

[0064] S93, load cathode layer material Mg / Ag or Li in the surface evaporation source A04, run reversely along the U-shaped track D02 to the U-shaped track D01 after starting, complete cathode layer evaporation of OLED panel C02, adjust the opening size of the surface evaporation source A04, run reversely along the U-shaped track D01 to the starting point of the running track, complete cathode layer evaporation of OLED panel C01, film thickness

[0065] The beneficial effects include at least:

[0066] In the present invention, a movable surface evaporation source is used to replace a fixed evaporation source or a point source, so that the evaporation technology can be applied to a large panel and a high level of automation can be achieved. A large surface evaporation source can be designed. Compared with a point source or a small surface source, a large surface source can improve the stability and repeatability of the process, thereby ensuring the uniformity of the film thickness and improving the consistency of the device performance.

[0067] A running track is set under the large-size OLED panel. When different functional layers need to be evaporated, the surface evaporation sources A01, A02, A03... can be loaded with different evaporation materials and move along the running track, realizing the evaporation of multiple materials on multiple OLED panels. The operation of the track is reversible, which greatly improves production efficiency. The track width, mask size, surface evaporation source area, etc. can be adjusted according to the size of the OLED panel. The system can evaporate panels covering 6-100 inches, with a resolution of more than 4K.

[0068] In the present invention, the size of the mask is larger than the OLED panel, the length of the surface evaporation source is larger than the width of the mask, and the height is lower than the mask. The relative distances among the OLED panel, the mask, and the surface evaporation source can be adjusted according to process requirements. The distance between the OLED panel and the mask is adjustable within the range of 0.2-10 μm, and the distance between the mask and the large-surface evaporation source is adjustable within the range of 200-800 mm.

[0069] An adjustable isolation plate is set up and placed between multiple panels. The height is adjustable within the range of 300-900mm. According to the process requirements, the isolation plate, mask, OLED panel and large-surface evaporation source are coordinated to prevent cross contamination. During the process, the OLED panel is fixed, which only involves the mask alignment, with small cumulative errors, which improves the alignment accuracy of the system. BRIEF DESCRIPTION OF THE DRAWINGS

[0070] Figure 1 This is a schematic diagram of the structure of a large-size OLED panel manufacturing system according to an embodiment of the present invention;

[0071] Figure 2 This is a schematic diagram of the position of the panel isolation plate of the large-size OLED panel manufacturing system according to an embodiment of the present invention. DETAILED DESCRIPTION

[0072] The preferred embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0073] See also Figure 1 and Figure 2 , including a surface evaporation source, a running track, a panel isolation plate, an OLED panel and a mask, wherein:

[0074] Several surface evaporation sources are set up. Figure 1 A01, A02, and A03 are loaded with the same or different evaporation materials, and the surface evaporation source moves forward or backward along the running track;

[0075] The running track includes several U-shaped tracks. Figure 1 D01, D02, D03, these several U-shaped tracks form an S-shaped running track;

[0076] Several OLED panels are set up, Figure 1 The C01, C02, and C03 are placed above the running track and evaporated by a movable surface evaporation source.

[0077] The mask is set under the OLED panel. Figure 1 B01, B02, and B03 are used as masks when the surface evaporation source evaporates the OLED panel;

[0078] The panel isolation plate is set between the OLED panels. Figure 2 E01 and E02 are placed vertically to isolate adjacent OLED panels and their evaporation materials.

[0079] The OLED panel is 6-100 inches. The size of the mask is larger than the OLED panel. The length of the surface evaporation source is larger than the width of the mask, and the position of the surface evaporation source is lower than that of the mask.

[0080] The distance between the OLED panel and the mask is 0.2μm-10μm, the distance between the mask and the surface evaporation source is 200mm-800mm. The height of the panel isolation plate is 300mm-900mm.

[0081] Based on the above purpose, the present invention also provides a large-size OLED panel manufacturing method. Based on the above large-size OLED panel manufacturing system, the manufacturing method includes the following steps:

[0082] Take several OLED panels of the same or different sizes, each of which has anodes made, and place them on the running track after pre-treatment, matching the mask of the corresponding size, the distance between the OLED panel and the mask is the first preset distance, the distance between the mask and the surface evaporation source is the second preset distance, and the height of the panel isolation plate is the third preset distance;

[0083] The light-emitting structure of the OLED panel includes anode / hole injection layer / organic light-emitting layer / electron injection layer / cathode;

[0084] The hole injection layer material is loaded in the first surface evaporation source, and after starting, it moves along the running track to complete the hole injection layer evaporation of the OLED panel;

[0085] Replace the mask, reload the mask and position it;

[0086] The organic light-emitting layer material is loaded in the second surface evaporation source, and after starting, it moves along the running track to complete the evaporation of the organic light-emitting layer of the OLED panel;

[0087] Replace the mask, reload the mask and position it;

[0088] The electron injection layer material is loaded in the third surface evaporation source, and after starting, it moves along the running track to complete the electron injection layer evaporation of the OLED panel;

[0089] Replace the mask, reload the mask and position it;

[0090] The cathode material is loaded into the fourth surface evaporation source, which is started and moves along the running track to complete the cathode evaporation of the OLED panel.

[0091] In a specific embodiment, the pre-evaporated OLED panel is a top-emitting structure, and the luminous film layer is 7 layers, and the following steps are included:

[0092] S11, select three OLED panels C01, C02, and C03 with a size of 1950×2250 (mm). The anode of the OLED panels has been made. After pre-treatment, they are aligned and placed on the running track. The corresponding masks B01, B02, and B03 are matched. The distance between the OLED panel and the mask is 5μm, the distance between the mask and the surface evaporation source is 400mm, and the height of the isolation plate is 500mm.

[0093] S21, the light-emitting structure used in the OLED panel is: anode / Hole injection layer (HIL, ) / hole transport layer (HTL, ) / organic light emitting layer (EML, ) / Electron Transport Layer (ETL, ) / Electron Injection Layer (ETL, ) / cathode

[0094] S31, loading the hole injection layer material CuPC (copper phthalocyanine) or TiOPC (titanium phthalocyanine) in the surface evaporation source A01, starting the trailing edge Figure 1 The forward running paths of the middle U-shaped tracks D01 and D02 complete the hole injection layer evaporation of the OLED panels C01, C02, and C03 in turn. The film thickness is

[0095] S41, replace the masks B01, B02, B03, load the masks B04, B05, B06, and realign them;

[0096] S51, loading the hole transport layer material TPD [N,N'-diphenyl-N,N'-di(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine] or NPB [N,N'-diphenyl-N,N'-(1-naphthyl)-1,1'-biphenyl-4,4'-diamine] in the surface evaporation source A02, and starting the trailing edge Figure 1 The forward running paths of the middle U-shaped tracks D01 and D02 successively complete the evaporation of the hole transport layer of the OLED panels C01, C02, and C03. The film thickness

[0097] S61, replace masks B04, B05, B06, load masks B07, B08, B09, and realign;

[0098] S71, loading the organic light-emitting layer material Alq3 (8-hydroxyquinoline aluminum) or TBADN [2-tert-butyl-9,10-di(2-naphthyl)anthracene] in the surface evaporation source A03, starting the trailing edge Figure 1The forward running paths of the middle U-shaped tracks D01 and D02 complete the evaporation of the organic light-emitting layers of the OLED panels C01, C02, and C03 in sequence. The film thickness

[0099] S81, replace masks B07, B08, B09, load masks B10, B11, B12, and realign;

[0100] S91, load the electron transport layer material PBD [2-(4-biphenyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole] or TAZ [3-(biphenyl-4-yl)-5-(4-tert-butylphenyl)-4-phenyl-4H-1,2,4-triazole] in the surface evaporation source A04, and start the trailing edge Figure 1 The forward running paths of the middle U-shaped tracks D01 and D02 successively complete the evaporation of the electron transport layer of the OLED panels C01, C02, and C03. The film thickness is

[0101] S101, replace masks B10, B11, B12, load masks B13, B14, B15, and realign;

[0102] S111, loading the electron injection layer material LiF or MgP in the surface evaporation source A05, starting the trailing edge Figure 1 The forward running paths of the middle U-shaped tracks D01 and D02 successively complete the evaporation of the electron injection layers of the OLED panels C01, C02, and C03. The film thickness is

[0103] S121, replace masks B13, B14, B15, load masks B16, B17, B18, and realign;

[0104] S131, load cathode layer material Al or Li in surface evaporation source A06, start rear edge Figure 1 The forward running paths of the middle U-shaped tracks D01 and D02 complete the cathode layer evaporation of the OLED panels C01, C02, and C03 in turn.

[0105] The pre-evaporated OLED panel has a top-emitting structure and an 8-layer luminous film layer, including the following steps:

[0106] S12, select 4 OLED panels C01, C02, C03, C04 with a size of 730×920 (mm), the anode of the OLED panels has been made, and they are placed on the running track after pre-treatment, and matched with the corresponding masks B01, B02, B03, B04. The distance between the OLED panel and the mask is 0.5μm, the distance between the mask and the surface evaporation source is 300mm, and the height of the isolation plate is 350mm;

[0107] S22, the light-emitting structure selected for the OLED panel is: anode / Hole injection layer (HIL, ) / hole transport layer (HTL, ) / organic light emitting layer (EML, ) / hole blocking layer (HBL, ) / Electron Transport Layer (ETL, ) / Electron Injection Layer (ETL, ) / cathode

[0108] S32, loading the hole injection layer material m-MTDATA [4,4',4'-tris (N-3-methylphenyl-N-phenylamino) triphenylamine] or 2-TNATA [4,4',4'-tris (2-naphthylphenylamino) triphenylamine] in the surface evaporation source A01, and starting the trailing edge Figure 1 The forward running paths of the middle U-shaped tracks D01 and D02 successively complete the evaporation of the hole injection layer of the OLED panels C01, C02, C03, and C04. The film thickness is

[0109] S42, replace the masks B01, B02, B03, B04, load the masks B05, B06, B07, B08, and realign them;

[0110] S52, loading the hole transport layer material PVK [poly (9-vinyl carbazole)] or TPD [N, N'-diphenyl-N, N'-di (3-methylphenyl) -1, 1'-biphenyl-4, 4'-diamine] in the surface evaporation source A02, and starting the trailing edge Figure 1 The forward running paths of the middle U-shaped tracks D01 and D02 complete the hole transport layer evaporation of the OLED panels C01, C02, C03, and C04 in turn. The film thickness

[0111] S62, replace masks B05, B06, B07, B08, load masks B09, B10, B11, B12, and realign;

[0112] S72, loading the organic light-emitting layer material (8-hydroxyquinoline aluminum) or TBADN [2-tert-butyl-9,10-di(2-naphthyl)anthracene] in the surface evaporation source A03, and starting the trailing edge Figure 1 The forward running paths of the middle U-shaped tracks D01 and D02 complete the evaporation of the organic light-emitting layers of the OLED panels C01, C02, C03, and C04 in sequence. The film thickness

[0113]

[0114] S82, replace masks B09, B10, B11, B12, load masks B13, B14, B15, B16, and realign;

[0115] S92, loading the hole blocking layer material Bphen (4,7-diphenyl-1,10-phenanthroline) or TPBi [1,3,5-tris (1-phenyl-1H-benzimidazol-2-yl) benzene] in the surface evaporation source A04, and starting the trailing edge Figure 1 The forward running paths of the middle U-shaped tracks D01 and D02 successively complete the hole blocking layer evaporation of the OLED panels C01, C02, C03, and C04. The film thickness

[0116] S102, replace the masks B13, B14, B15, B16, load the masks B17, B18, B19, B20, and realign them;

[0117] S112, loading the electron transport layer material OXD {2,2'-(1,3-phenyl)bis[5-(4-tert-butylphenyl)-1,3,4-oxadiazole]} or DPVBi [4,4'-bis(2,2-diphenylethylene)-1,1'biphenyl] in the surface evaporation source A05, and starting the trailing edge Figure 1 The forward running paths of the middle U-shaped tracks D01 and D02 complete the evaporation of the electron transport layer of the OLED panels C01, C02, C03, and C04 in turn. The film thickness is

[0118] S122, replace masks B17, B18, B19, B20, load masks B21, B22, B23, B24, and realign;

[0119] S132, loading the electron injection layer material MgF or Al2O3 in the surface evaporation source A06, starting the trailing edge Figure 1 The forward running paths of the middle U-shaped tracks D01 and D02 complete the electron injection layer evaporation of the OLED panels C01, C02, C03, and C04 in turn. The film thickness

[0120] S142, replace masks B21, B22, B23, B24, load masks B25, B26, B27, B28, and realign;

[0121] S152, load the cathode layer material Mg / Ag or ITO in the surface evaporation source A07, start the trailing edge Figure 1 The forward running paths of the middle U-shaped tracks D01 and D02 successively complete the cathode layer evaporation of the OLED panels C01, C02, C03, and C04. The film thickness

[0122] The pre-evaporated OLED panel has a top-emitting structure and a 5-layer emitting film layer, including the following steps:

[0123] S13, select a 1300×1500 (mm) panel C02 and a 680×880 (mm) OLED panel C01. The anode of the OLED panel has been made. After pre-treatment, C02 is placed between the U-shaped tracks D02 and D01, and C01 is placed in front of the U-shaped track D01. Match the corresponding masks B02 and B01. The distance between the OLED panel and the mask is 0.8μm, the distance between the mask and the surface evaporation source is 300mm, and the height of the isolation plate is 350mm;

[0124] S23, the light-emitting structure selected for the OLED panel is: anode / Hole injection layer (HIL, ) / organic light emitting layer (EML, ) / Electron Injection Layer (ETL, ) / cathode

[0125] S33, load the hole injection layer material m-MTDATA [4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine] or TiOPC (phthalocyanine titanium oxide) in the surface evaporation source A01, start it and run it in reverse along the U-shaped track D02 to the U-shaped track D01 to complete the hole injection layer evaporation on the OLED panel C02, adjust the opening size of the surface evaporation source A01, run it in reverse along the U-shaped track D01 to the starting point of the track, complete the hole injection layer evaporation on the OLED panel C01, and the film thickness is

[0126] S43, replace the masks B02 and B01, load the masks B04 and B03, and realign them;

[0127] S53, load the organic light-emitting layer material Alq3 (8-hydroxyquinoline aluminum) or TBADN [2-tert-butyl-9,10-di(2-naphthyl)anthracene] in the surface evaporation source A02, start it and run it in reverse along the U-shaped track D02 to the U-shaped track D01 to complete the evaporation of the organic light-emitting layer of the OLED panel C02, adjust the opening size of the surface evaporation source A02, run it in reverse along the U-shaped track D01 to the starting point of the track, complete the evaporation of the organic light-emitting layer of the OLED panel C01, and the film thickness is

[0128] S63, replace masks B04 and B03, load masks B06 and B05, and realign;

[0129] S73, load the electron injection layer material LiF or MgF in the surface evaporation source A03, start it and run it in reverse along the U-shaped track D02 to the U-shaped track D01, complete the electron injection layer evaporation of the OLED panel C02, adjust the opening size of the surface evaporation source A03, run it in reverse along the U-shaped track D01 to the track starting point, complete the electron injection layer evaporation of the OLED panel C01, and the film thickness is

[0130] S83, replace masks B06 and B05, load masks B08 and B07, and realign;

[0131] S93, load cathode layer material Mg / Ag or Li in the surface evaporation source A04, run reversely along the U-shaped track D02 to the U-shaped track D01 after starting, complete cathode layer evaporation of OLED panel C02, adjust the opening size of the surface evaporation source A04, run reversely along the U-shaped track D01 to the starting point of the running track, complete cathode layer evaporation of OLED panel C01, film thickness

[0132] The above are only preferred embodiments of the present invention and are not intended to limit the present invention. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should be included in the protection scope of the present invention.

Claims

1. A large-size OLED panel manufacturing system, characterized in that: It includes a surface evaporation source, a running track, a panel isolation plate, an OLED panel and a mask, among which: The surface evaporation sources are provided in plurality, loaded with the same or different evaporation materials, and the surface evaporation sources move forward or backward along the running track; The running track includes a plurality of U-shaped tracks, and the plurality of U-shaped tracks form an S-shaped running track; The OLED panels are provided in plurality and placed on the running track, and are evaporated by a movable surface evaporation source. The mask is arranged below the OLED panel and is used as a mask when the surface evaporation source evaporates the OLED panel; The panel isolation plate is arranged between the OLED panels to isolate the vapor deposition materials of adjacent OLED panels.

2. A large-size OLED panel manufacturing system according to claim 1, characterized in that: The OLED panel is 6-100 inches.

3. The large-size OLED panel manufacturing system according to claim 1, characterized in that: The size of the mask is larger than the OLED panel.

4. The large-size OLED panel manufacturing system according to claim 1, characterized in that: The length of the surface evaporation source is greater than the width of the mask, and the position of the surface evaporation source is lower than the position of the mask.

5. A large-size OLED panel manufacturing system according to claim 4, characterized in that: The distance between the OLED panel and the mask is 0.2 μm-10 μm, and the distance between the mask and the surface evaporation source is 200 mm-800 mm.

6. The large-size OLED panel manufacturing system according to claim 1, characterized in that: The height of the panel isolation plate is 300mm-900mm.

7. A method for manufacturing a large-size OLED panel, characterized in that: A large-size OLED panel manufacturing system according to any one of claims 1 to 6, wherein the manufacturing method comprises the following steps: Take several OLED panels of the same or different sizes, each of which has anodes made, and place them on the running track after pre-treatment, matching the mask of the corresponding size, the distance between the OLED panel and the mask is the first preset distance, the distance between the mask and the surface evaporation source is the second preset distance, and the height of the panel isolation plate is the third preset distance; The light-emitting structure of the OLED panel includes anode / hole injection layer / organic light-emitting layer / electron injection layer / cathode; The hole injection layer material is loaded in the first surface evaporation source, and after starting, it moves along the running track to complete the hole injection layer evaporation of the OLED panel; Replace the mask, reload the mask and position it; The organic light-emitting layer material is loaded in the second surface evaporation source, and after starting, it moves along the running track to complete the evaporation of the organic light-emitting layer of the OLED panel; Replace the mask, reload the mask and position it; The electron injection layer material is loaded in the third surface evaporation source, and after starting, it moves along the running track to complete the electron injection layer evaporation of the OLED panel; Replace the mask, reload the mask and position it; The cathode material is loaded into the fourth surface evaporation source, which is started and moves along the running track to complete the cathode evaporation of the OLED panel.

8. The method for manufacturing a large-size OLED panel according to claim 7, characterized in that: The pre-evaporated OLED panel has a top-emitting structure and a 7-layer emitting film layer, and includes the following steps: S11, select three OLED panels C01, C02, and C03 with a size of 1950×2250 mm. The anode of the OLED panels has been made. After pre-treatment, they are aligned and placed on the running track. The corresponding masks B01, B02, and B03 are matched. The distance between the OLED panel and the mask is 5 μm, the distance between the mask and the surface evaporation source is 400 mm, and the height of the isolation plate is 500 mm. S21, the light-emitting structure used in the OLED panel is: anode / Hole injection layer (HIL, ) / hole transport layer (HTL, ) / organic light emitting layer (EML, ) / Electron Transport Layer (ETL, ) / Electron Injection Layer (ETL, ) / cathode S31, the hole injection layer material CuPC (copper phthalocyanine) or TiOPC (titanium phthalocyanine) is loaded in the surface evaporation source A01, and after starting, the hole injection layer evaporation of the OLED panels C01, C02, and C03 is completed in sequence along the forward running path of the U-shaped tracks D01 and D02. The film thickness is S41, replace the masks B01, B02, B03, load the masks B04, B05, B06, and realign them; S51, load the hole transport layer material TPD [N,N'-diphenyl-N,N'-di(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine] or NPB [N,N'-diphenyl-N,N'-(1-naphthyl)-1,1'-biphenyl-4,4'-diamine] in the surface evaporation source A02, and after starting, complete the hole transport layer evaporation of OLED panels C01, C02, and C03 in turn along the forward running path of U-shaped tracks D01 and D02. The film thickness is S61, replace masks B04, B05, B06, load masks B07, B08, B09, and realign; S71, load the organic light-emitting layer material Alq3 (8-hydroxyquinoline aluminum) or TBADN [2-tert-butyl-9,10-di(2-naphthyl)anthracene] in the surface evaporation source A03, start it, and complete the organic light-emitting layer evaporation of OLED panels C01, C02, and C03 in sequence along the forward running path of U-shaped tracks D01 and D02. The film thickness is S81, replace masks B07, B08, B09, load masks B10, B11, B12, and realign; S91, load the electron transport layer material PBD [2-(4-biphenyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole] or TAZ [3-(biphenyl-4-yl)-5-(4-tert-butylphenyl)-4-phenyl-4H-1,2,4-triazole] in the surface evaporation source A04, and after starting, complete the electron transport layer evaporation of OLED panels C01, C02, and C03 in sequence along the forward running path of U-shaped tracks D01 and D02. The film thickness is S101, replace masks B10, B11, B12, load masks B13, B14, B15, and realign; S111, load the electron injection layer material LiF or MgP in the surface evaporation source A05, start it and complete the electron injection layer evaporation of OLED panels C01, C02, C03 in sequence along the forward running path of U-shaped tracks D01 and D02, and the film thickness is S121, replace masks B13, B14, B15, load masks B16, B17, B18, and realign; S131, load cathode layer material Al or Li in the surface evaporation source A06, start and complete cathode layer evaporation of OLED panels C01, C02, C03 in sequence along the forward running path of U-shaped tracks D01 and D02, and the film thickness is 9. The method according to claim 7, characterized in that: The pre-evaporated OLED panel has a top-emitting structure and an 8-layer luminous film layer, including the following steps: S12, select 4 OLED panels C01, C02, C03, C04 with a size of 730×920 mm, the anode of the OLED panels has been made, and they are placed on the running track after pre-treatment, and matched with the corresponding masks B01, B02, B03, B04. The distance between the OLED panel and the mask is 0.5 μm, the distance between the mask and the surface evaporation source is 300 mm, and the height of the isolation plate is 350 mm; S22, the light-emitting structure selected for the OLED panel is: anode / Hole injection layer (HIL, ) / hole transport layer (HTL, ) / organic light emitting layer (EML, ) / hole blocking layer (HBL, ) / Electron Transport Layer (ETL, ) / Electron Injection Layer (ETL, ) / cathode S32, loading the hole injection layer material m-MTDATA [4,4',4'-tri(N-3-methylphenyl-N-phenylamino)triphenylamine] or 2-TNATA [4,4',4'-tri(2-naphthylphenylamino)triphenylamine] in the surface evaporation source A01, and after starting, completing the hole injection layer evaporation of OLED panels C01, C02, C03, and C04 in sequence along the forward running path of the U-shaped tracks D01 and D02, with a film thickness of S42, replace the masks B01, B02, B03, B04, load the masks B05, B06, B07, B08, and realign them; S52, load the hole transport layer material PVK [poly (9-vinyl carbazole)] or TPD [N, N'-diphenyl-N, N'-di (3-methylphenyl) -1, 1'-biphenyl-4, 4'-diamine] in the surface evaporation source A02, and after starting, complete the hole transport layer evaporation of OLED panels C01, C02, C03, and C04 in turn along the forward running path of the U-shaped tracks D01 and D02. The film thickness is S62, replace masks B05, B06, B07, B08, load masks B09, B10, B11, B12, and realign; S72, load the organic light-emitting layer material (8-hydroxyquinoline aluminum) or TBADN [2-tert-butyl-9,10-di(2-naphthyl)anthracene] in the surface evaporation source A03, start it, and complete the organic light-emitting layer evaporation of OLED panels C01, C02, C03, and C04 in sequence along the forward running path of U-shaped tracks D01 and D02. The film thickness is S82, replace masks B09, B10, B11, B12, load masks B13, B14, B15, B16, and realign; S92, load the hole blocking layer material Bphen (4,7-diphenyl-1,10-phenanthroline) or TPBi [1,3,5-tri(1-phenyl-1H-benzimidazol-2-yl)benzene] in the surface evaporation source A04, and after starting, complete the hole blocking layer evaporation of OLED panels C01, C02, C03, and C04 in sequence along the forward running path of the U-shaped tracks D01 and D02, with a film thickness of S102, replace the masks B13, B14, B15, B16, load the masks B17, B18, B19, B20, and realign them; S112, loading the electron transport layer material OXD {2,2'-(1,3-phenyl)bis[5-(4-tert-butylphenyl)-1,3,4-oxadiazole]} or DPVBi [4,4'-bis(2,2-diphenylvinyl)-1,1'biphenyl] in the surface evaporation source A05, and after starting, completing the electron transport layer evaporation of OLED panels C01, C02, C03, and C04 in sequence along the forward running path of the U-shaped tracks D01 and D02, with a film thickness of S122, replace masks B17, B18, B19, B20, load masks B21, B22, B23, B24, and realign; S132, load the electron injection layer material MgF or Al2O3 in the surface evaporation source A06, start it and complete the electron injection layer evaporation of OLED panels C01, C02, C03, C04 in sequence along the forward running path of U-shaped tracks D01 and D02, and the film thickness is S142, replace masks B21, B22, B23, B24, load masks B25, B26, B27, B28, and realign; S152, load cathode layer material Mg / Ag or ITO in the surface evaporation source A07, start and complete cathode layer evaporation of OLED panels C01, C02, C03, C04 in sequence along the forward running path of U-shaped tracks D01 and D02, and the film thickness is 10. The method according to claim 7, characterized in that The pre-evaporated OLED panel has a top-emitting structure and a 5-layer emitting film layer, including the following steps: S13, select one OLED panel C02 with a size of 1300×1500 mm and one OLED panel C01 with a size of 680×880 (mm), the anode of the OLED panel has been manufactured, and the OLED panel is aligned after pre-treatment, C02 is placed between the U-shaped tracks D02 and D01, C01 is placed in front of the U-shaped track D01, and the corresponding masks B02 and B01 are matched, the distance between the OLED panel and the mask is 0.8 μm, the distance between the mask and the surface evaporation source is 300 mm, and the height of the isolation plate is 350 mm; S23, the light-emitting structure selected for the OLED panel is: anode / Hole injection layer (HIL, ) / organic light emitting layer (EML, ) / Electron Injection Layer (ETL, ) / cathode S33, load the hole injection layer material m-MTDATA [4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine] or TiOPC (phthalocyanine titanium oxide) in the surface evaporation source A01, start it and run it in reverse along the U-shaped track D02 to the U-shaped track D01 to complete the hole injection layer evaporation on the OLED panel C02, adjust the opening size of the surface evaporation source A01, run it in reverse along the U-shaped track D01 to the starting point of the track, complete the hole injection layer evaporation on the OLED panel C01, and the film thickness is S43, replace the masks B02 and B01, load the masks B04 and B03, and realign them; S53, load the organic light-emitting layer material Alq3 (8-hydroxyquinoline aluminum) or TBADN [2-tert-butyl-9,10-di(2-naphthyl)anthracene] in the surface evaporation source A02, start it and run it in reverse along the U-shaped track D02 to the U-shaped track D01 to complete the evaporation of the organic light-emitting layer of the OLED panel C02, adjust the opening size of the surface evaporation source A02, run it in reverse along the U-shaped track D01 to the starting point of the track, complete the evaporation of the organic light-emitting layer of the OLED panel C01, and the film thickness is S63, replace masks B04 and B03, load masks B06 and B05, and realign; S73, load the electron injection layer material LiF or MgF in the surface evaporation source A03, start it and run it in reverse along the U-shaped track D02 to the U-shaped track D01, complete the electron injection layer evaporation of the OLED panel C02, adjust the opening size of the surface evaporation source A03, run it in reverse along the U-shaped track D01 to the track starting point, complete the electron injection layer evaporation of the OLED panel C01, and the film thickness is S83, replace masks B06 and B05, load masks B08 and B07, and realign; S93, load cathode layer material Mg / Ag or Li in the surface evaporation source A04, run reversely along the U-shaped track D02 to the U-shaped track D01 after starting, complete cathode layer evaporation of OLED panel C02, adjust the opening size of the surface evaporation source A04, run reversely along the U-shaped track D01 to the starting point of the running track, complete cathode layer evaporation of OLED panel C01, film thickness

Images