Method for inhibiting interaction between environment-friendly insulating gas and metal copper interface

Abstract

The invention provides a method for inhibiting interaction between environment-friendly insulating gas and a metal copper interface, which comprises the following steps of: performing achromatic copper film deposition on the surface of metal copper by using a coherent atom sputtering epitaxy system (ASE), taking a single crystal copper film as a starting point and adopting a two-step growth method, the surface growth of a porous Cu nanostructure is realized, and an achromatic copper film (ACF) is deposited in a manner of retaining the crystallinity of a Cu crystal lattice through an incoherent ASE (Accelerated Solvent Extraction) method. According to the method, lattice reconstruction is conducted on the surface of the metal copper material, ACF generated on the surface of Cu preferentially grows in an oriented mode in the Cu (111) direction, then the surface oxidation resistance and corrosion resistance of the metal copper material in the atmosphere of environment-friendly insulating gas such as C4F7N, C5F10O and C6F12O are effectively improved, and the effect of inhibiting gas decomposition and solid deposition is achieved.

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