High-frequency power supply device

Abstract

This high-frequency power supply device (1) is provided with: a high-frequency amplification unit (10) that performs high-frequency amplification by means of a switching operation of an amplification element (11); and a gate drive unit (20) that inputs a gate signal to the gate terminal of the amplification element (11) of the high-frequency amplification unit (10) and drives the amplification element (11), the amplification element (11) of the high-frequency amplification unit (10) being an LDMOSFET, and the switching element (21) of the gate drive unit being a GaN FET. According to the present invention, by using an LDMOSFET as an amplification element to output high frequency of high output / high frequency, and by using a GaN FET as a switching element, individual differences in propagation delays of the switching element are reduced, and variations in dead time (DT) and pulse width (Ton) of a gate signal for PWM control are suppressed, thereby improving accuracy and reproducibility, improving high-speed response characteristics, and suppressing high-frequency resonance.

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