Preparation method of titanium niobium oxide low-temperature electrode material

CN119841348AActive Publication Date: 2025-04-18INSTITUTE OF PROCESS ENGINEERING CHINESE ACADEMY OF SCIENCES
View PDF 7 Cites 0 Cited by

Patent Information

Application Number
CN202311135123.1
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2023-10-17
Publication Date
2025-04-18
Estimated Expiration
2043-10-17

Smart Images

  • Figure CN119841348A_ABST
    Figure CN119841348A_ABST
Patent Text Reader

Abstract

The invention provides a method for preparing a titanium niobium oxide low-temperature electrode material. The method is characterized in that the titanium-niobium oxide low-temperature electrode material is prepared from potassium heptafluoroniobate serving as a niobium source, titanyl sulfate serving as a titanium source, ammonia water serving as a coprecipitator and carbon nanotubes through a coprecipitation method. The titanium-niobium oxide low-temperature electrode materials with different properties are obtained by changing the feed ratio, the calcination temperature and the calcination atmosphere of the precursor. The preparation method is simple and safe, and the prepared titanium-niobium oxide low-temperature electrode material has relatively high capacity performance as a negative electrode material of a lithium ion battery.
Need to check novelty before this filing date? Find Prior Art

Citation Information

Patent Citations

  • Method of producing nano-titanium niobium oxynitride powder body

    CN101172654A

  • Preparation method of carbon modified titanium niobate material, carbon modified titanium niobate material, and lithium ion capacitor and negative electrode paste thereof

    CN108183039A

  • TiNb2O7 material with preferential growth of (010) crystal face and preparation method and application of TiNb2O7 material

    CN113206240A

  • Titanium niobium oxide / TiO2 (B) composite material and preparation method and application thereof

    CN115528236A

  • Preparation method and application of symbiotic bismuth system layered ferroelectric Bi7Ti4NbO21 semiconductor material

    CN116639729A