Method and apparatus for detecting defects on a substrate
CN119852287BActive Publication Date: 2026-01-27GTA SEMICON CO LTD
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Patent Information
- Application Number
- CN202510031519.4
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2025-01-08
- Publication Date
- 2026-01-27
- Estimated Expiration
- 2045-01-08
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Figure CN119852287B_ABST
Abstract
The present application relates to a method and device for detecting defects in a substrate. The method for detecting defects in a substrate comprises the following steps: providing a substrate to be tested, which comprises a top surface and a bottom surface oppositely distributed along a first direction; forming a plurality of test structures spaced along a second direction, each of the test structures comprising a PN junction located in the substrate to be tested, and the PN junctions in at least two of the test structures being different in junction depth; obtaining a plurality of reverse bias leakage currents respectively corresponding to the plurality of test structures; determining whether there is at least one reverse bias leakage current in the plurality of reverse bias leakage currents, the order of magnitude of which is higher than that of the other reverse bias leakage currents, and if so, confirming that there is a defect in the substrate to be tested. The present application not only simplifies the operation of defect detection in the substrate to be tested, but also avoids damage to the substrate to be tested, effectively improving the efficiency of defect detection.
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