Carrier double-gate current regulated parallel gate light-emitting device and array
CN119855372AActive Publication Date: 2025-04-18FUZHOU UNIV
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Patent Information
- Application Number
- CN202510002937.0
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-01-02
- Publication Date
- 2025-04-18
- Estimated Expiration
- 2045-01-02
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Figure CN119855372A_ABST
Abstract
The invention, which relates to the photoelectric display field, discloses a carrier double-gate current-regulated parallel gate light-emitting device comprising a substrate, a light-emitting composite layer, and a first hole transport layer and a first electron transport layer which are arranged at two sides of the light-emitting composite layer. The thin electron transport layer, the first regulation and control electrode, the second hole transport layer and the anode are located on the side of the first hole transport layer, and the thin hole transport layer, the second regulation and control electrode, the second electron transport layer and the cathode are located on the side of the first electron transport layer. According to the device provided by the invention, electrons are optimized under the regulation and control of the second bias signal and the third bias signal, the hole injection amount is balanced, the device is easy to drive, the holes of the first hole transport layer and the electrons of the first electron transport layer are driven to compositely emit light in the light-emitting composite layer, and the light-emitting efficiency is improved.
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Citation Information
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