显示基板及其制备方法、显示装置
By setting a p-type oxide-doped anode modification layer and an n-type material layer on the OLED substrate, the crosstalk and voltage rise problems caused by p-dopant doping are solved, thus improving the OLED display performance.
CN119855444BActive Publication Date: 2026-07-17BOE TECHNOLOGY GROUP CO LTD +1
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- BOE TECHNOLOGY GROUP CO LTD
- Filing Date
- 2025-01-03
- Publication Date
- 2026-07-17
AI Technical Summary
Technical Problem
In the OLED panel manufacturing process, excessively high p-dopant doping concentration leads to poor crosstalk, while excessively low concentration leads to increased operating voltage and power consumption, affecting display performance.
Method used
An anode modification layer and an n-type material layer are disposed on the display substrate. The anode modification layer uses a p-type oxide-doped anode material, and the n-type material layer forms a pn junction with the hole injection layer to regulate the interface energy level and suppress lateral current.
Benefits of technology
It effectively improves the problem of increased operating voltage in OLED devices, reduces crosstalk, and enhances display performance.
✦ Generated by Eureka AI based on patent content.
Smart Images
Figure CN119855444B_ABST
Abstract
提供一种显示基板，包括：衬底基板；多个有机发光二极管，位于衬底基板上，包括第一电极、空穴注入层、发光层和第二电极；像素界定层，位于衬底基板上，限定出多个像素开口，相邻的有机发光二极管的第一电极在衬底基板上的正投影分别与相邻的像素开口在衬底基板上的正投影至少部分重叠，且相邻的有机发光二极管的第一电极在衬底基板上的正投影间隔开；相邻的有机发光二极管的空穴注入层在衬底基板上的正投影分别覆盖相邻的像素开口在衬底基板上的正投影，且相邻的有机发光二极管的空穴注入层在衬底基板上的正投影彼此连接；第一电极包括：阳极修饰层，位于第一电极面向空穴注入层的一侧，阳极修饰层包括p型氧化物掺杂的阳极材料。
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