Multiplying type photoelectric detector based on organic-perovskite quantum dot active layer and preparation method thereof
CN119855457AActive Publication Date: 2025-04-18JILIN UNIVERSITY
Patent Information
- Application Number
- CN202510060329.5
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-01-15
- Publication Date
- 2025-04-18
- Estimated Expiration
- 2045-01-15
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Figure CN119855457A_ABST
Abstract
The invention discloses a multiplication type photoelectric detector based on an organic-perovskite quantum dot active layer and a preparation method of the multiplication type photoelectric detector, and belongs to the technical field of organic photoelectric devices. The solar cell is composed of an ITO conductive glass anode, a poly (2, 3-dihydrothieno-1, 4-dioxin) hole transport layer, an organic-perovskite quantum dot active layer and an aluminum metal cathode in sequence. The invention provides a strategy of introducing CsPbBr3 perovskite quantum dots into a P3HT organic material, the quantum dots can be effectively used as electron traps in the organic material, and after an organic electron donor material generates photo-induced electrons under illumination, the electrons are captured by the electron traps of the quantum dots; the increase of the density of electrons captured by traps at the interface of the active layer and the cathode leads to downward bending of the energy band and reduction of the barrier width. Meanwhile, a large number of holes generated by P3HT serving as a P-type material under illumination are difficult to be captured by quantum dot electron traps, and a large number of holes pass through a potential barrier with reduced width under the action of an external electric field due to a tunneling effect to form multiplication current.
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