AGZO target material with high light transmittance and high conductivity and preparation method thereof

Abstract

The invention relates to the technical field of AGZO target materials, provides a high-light-transmittance and high-conductivity AGZO target material and a preparation method thereof, and remarkably improves the light transmittance, the conductivity and the stability of the AGZO target material by introducing novel doping elements and nano additives and optimizing the proportion of all components. The prepared AGZO target material is high in light transmittance, and the light transmittance can reach 92% or above within the visible light range (400-700 nm); the conductivity is high, and the resistivity is lower than 2 * 10 <-4 > omega.cm; rare earth elements of yttrium, lanthanum and gadolinium are introduced as novel doping elements, so that the conductivity and the stability of the material are further improved; tin oxide or antimony oxide nanoparticles are introduced as an additive, so that the light transmittance and conductivity of the material are further improved; the stability is excellent in a high-temperature and high-humidity environment; compared with a traditional ITO material, the cost is reduced.

Description

Technical Field

[0001] The present invention relates to the technical field of AGZO target materials, and in particular to an AGZO target material with high light transmittance and high conductivity and a preparation method thereof. Background Art

[0002] Transparent conductive oxide (TCO) materials are widely used in flat panel displays, solar cells, touch screens and other fields. Traditional TCO materials such as indium tin oxide (ITO) are widely used due to their high conductivity and high transmittance, but their high cost, scarcity of indium resources and fragility have prompted people to look for alternative materials. Aluminum-doped zinc oxide (AGZO) has become a potential alternative material due to its low cost, good optoelectronic properties and mechanical stability. However, the existing AGZO target still has room for improvement in transmittance and conductivity, especially in terms of formulation optimization and material component selection, which cannot achieve high transmittance and high conductivity. Summary of the invention

[0003] In view of this, the purpose of the present invention is to provide an AGZO target material with high transmittance and high conductivity and a preparation method thereof to solve the problems arising from the background technology.

[0004] Based on the above purpose, the present invention provides an AGZO target material with high light transmittance and high conductivity, comprising the following components in weight proportion:

[0005] Zinc oxide (ZnO): 75-85%, aluminum oxide (Al2O3): 5-10%, new doping elements: 2-5%, nano additives: 5-10%.

[0006] Preferably, the novel doping element is a rare earth element.

[0007] Preferably, the novel doping element is one of yttrium, lanthanum and gadolinium.

[0008] Preferably, the nano-additive is tin oxide nano-particles or antimony oxide nano-particles.

[0009] A method for preparing an AGZO target material with high light transmittance and high conductivity comprises the following steps:

[0010] Step 1, raw material mixing: zinc oxide, aluminum oxide, a compound of a novel doping element and a nano additive are mixed in proportion;

[0011] Step 2, high energy ball milling: subjecting the mixed raw materials to high energy ball milling;

[0012] Step 3, plasma assisted sintering: pre-sintering the ball-milled raw material under the assistance of plasma;

[0013] Step 4, sintering: sintering in a sintering furnace, the atmosphere in the furnace is nitrogen or argon;

[0014] Step 5: Annealing: Annealing is performed in an annealing furnace with a nitrogen or argon atmosphere.

[0015] Preferably, the ball milling time in step 2 is 10-14 hours, and the ball-to-material ratio is 25:1 to 30:1.

[0016] Preferably, in step three, the plasma assisted sintering temperature is 900-1100° C. and the time is 3-5 hours.

[0017] Preferably, the sintering temperature in step 4 is 1300-1600° C., and the sintering time is 8-12 hours.

[0018] Preferably, the annealing temperature in step 5 is 1100-1300°C and the annealing time is 5-7 hours.

[0019] Beneficial effects of the present invention: The present invention significantly improves the transmittance, conductivity and stability of the AGZO target by introducing new doping elements, nano additives and optimizing the proportion of each component. The AGZO target prepared by the present invention has high transmittance: in the visible light range (400-700nm), the transmittance can reach more than 92%; high conductivity: the resistivity is lower than 2×10^-4Ω·cm; the introduction of yttrium, lanthanum and gadolinium rare earth elements as new doping elements further improves the conductivity and stability of the material; the introduction of tin oxide or antimony oxide nanoparticles as additives further improves the transmittance and conductivity of the material; it has excellent stability in high temperature and high humidity environments; compared with traditional ITO materials, the cost is reduced. DETAILED DESCRIPTION

[0020] In order to make the objectives, technical solutions and advantages of the present invention more clearly understood, the present invention is further described in detail below in conjunction with specific embodiments.

[0021] It should be noted that, unless otherwise defined, the technical terms or scientific terms used in the present invention should be understood by people with ordinary skills in the field to which the present invention belongs. The "first", "second" and similar words used in the present invention do not indicate any order, quantity or importance, but are only used to distinguish different components. "Include" or "comprise" and similar words mean that the elements or objects appearing before the word include the elements or objects listed after the word and their equivalents, without excluding other elements or objects. "Connect" or "connected" and similar words are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "Up", "down", "left", "right" and the like are only used to indicate relative positional relationships. When the absolute position of the described object changes, the relative positional relationship may also change accordingly.

[0022] Example 1

[0023] This embodiment provides an AGZO target material with high light transmittance and high conductivity and a preparation method thereof.

[0024] The target material includes the following components in weight proportions: 80% zinc oxide, 7% aluminum oxide, 5% yttrium oxide and 8% indium tin oxide nanoparticles.

[0025] The preparation method is as follows:

[0026] S1, raw material mixing: 80% zinc oxide, 7% aluminum oxide, 5% yttrium oxide and 8% indium tin oxide nanoparticles are mixed;

[0027] S2, high-energy ball milling: the ball milling time was 12 h, and the ball-to-material ratio was 28:1;

[0028] S3, plasma assisted sintering: plasma assisted sintering is performed at 1000°C for 4 hours;

[0029] S4, sintering: sintering at 1500 °C for 10 h in a nitrogen atmosphere;

[0030] S5, annealing treatment: annealing at 1200°C for 6 hours, with the atmosphere in the furnace being nitrogen.

[0031] Comparative Example 1

[0032] The conventional AGZO target material includes the following components in weight proportion: zinc oxide: 90%, aluminum oxide: 10%, and molybdenum oxide: doped 2%.

[0033] Comparative Example 2

[0034] The AGZO target material without nano-additives includes components in the following weight proportions: zinc oxide: 90%, aluminum oxide: 10%, and yttrium oxide: doping 5%.

[0035] Comparative Example 3

[0036] The AGZO target material without the novel doping element includes the following components in weight proportions: zinc oxide: 90%, aluminum oxide: 10%, and indium tin oxide nanoparticles 5%.

[0037] The AGZO target material preparation method of Comparative Examples 1-3 is as follows:

[0038] S1, raw material mixing: mixing the formula powders in the above comparative example;

[0039] S2, ball milling treatment: ball milling time was 8 hours, ball to material ratio was 20:1;

[0040] S3, sintering: sintering at 1300 °C for 8 hours, with nitrogen atmosphere in the furnace;

[0041] S4, annealing treatment: annealing at 1100°C for 4 hours, with the furnace atmosphere being nitrogen.

[0042] The transmittance and resistivity of the targets prepared in Example 1 and Comparative Examples 1-3 were tested, and the test results are as follows:

[0043]

[0044] It can be seen that the transmittance, conductivity and stability of AGZO target can be significantly improved by introducing new doping elements, nano-additives and optimizing the ratio of each component.

[0045] It should be understood by those skilled in the art that the discussion of any of the above embodiments is merely exemplary and is not intended to imply that the scope of the present invention is limited to these examples; under the concept of the present invention, the technical features in the above embodiments or different embodiments may also be combined, the steps may be implemented in any order, and there are many other variations of the different aspects of the present invention as described above, which are not provided in detail for the sake of simplicity. Any omissions, modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention shall be included in the scope of protection of the present invention.

Claims

1. An AGZO target material with high light transmittance and high conductivity, characterized in that: The composition comprises the following components in weight proportion: Zinc oxide (ZnO): 75-85%, aluminum oxide (Al2O3): 5-10%, new doping elements: 2-5%, nano additives: 5-10%.

2. The AGZO target material with high light transmittance and high conductivity according to claim 1, characterized in that: The novel doping element is a rare earth element.

3. The AGZO target material with high light transmittance and high conductivity according to claim 2, characterized in that: The novel doping element is one of yttrium, lanthanum and gadolinium.

4. The AGZO target material with high light transmittance and high conductivity according to claim 3, characterized in that: The nano additive is tin oxide nanoparticles or antimony oxide nanoparticles.

5. The method for preparing the AGZO target material with high light transmittance and high conductivity according to claim 4, characterized in that: The following steps are included: Step 1, raw material mixing: zinc oxide, aluminum oxide, a compound of a novel doping element and a nano additive are mixed in proportion; Step 2, high energy ball milling: subjecting the mixed raw materials to high energy ball milling; Step 3: plasma-assisted sintering: pre-sintering the ball-milled raw material under the assistance of plasma; Step 4, sintering: sintering in a sintering furnace, the atmosphere in the furnace is nitrogen or argon; Step 5: Annealing: Annealing is performed in an annealing furnace with a nitrogen or argon atmosphere.

6. The method for preparing the AGZO target material with high light transmittance and high conductivity according to claim 5, characterized in that: The ball milling time in step 2 is 10-14 hours, and the ball-to-material ratio is 25:1 to 30:

1.

7. The method for preparing the AGZO target material with high light transmittance and high conductivity according to claim 6, characterized in that: The plasma assisted sintering temperature in step three is 900-1100° C. and the sintering time is 3-5 hours.

8. The method for preparing the AGZO target material with high light transmittance and high conductivity according to claim 7, characterized in that: The sintering temperature in step 4 is 1300-1600° C. and the sintering time is 8-12 hours.

9. The method for preparing the AGZO target material with high light transmittance and high conductivity according to claim 8, characterized in that: The annealing temperature in step five is 1100-1300° C., and the annealing time is 5-7 hours.

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