Intelligent power module and chip

Abstract

According to the intelligent power module and the chip provided by the embodiment of the invention, the chip matched with an insulated gate bipolar transistor device and the chip for a fast recovery diode device are compositely packaged, so that the original functions and definition are ensured, and the size of the device / module can be reduced to the greatest extent; by the adoption of the module with the new layout, integration and miniaturization are achieved; more modules are integrated, so that various packaging procedures can be reduced, the production cost is reduced to a great extent, and meanwhile, the rapid installation and use in an application occasion are accelerated; a driving chip of an insulated gate bipolar transistor device is directly packaged into a new layout, the distance between the insulated gate bipolar transistor device and the driving chip is greatly reduced, the external interference of a circuit is reduced, the accuracy of signal transmission is improved, a plurality of insulated bipolar transistors and a plurality of fast recovery diodes are packaged into a substrate at the same time, and the reliability of signal transmission is improved. Multiple functions can be achieved, and multiple function requirements of users are met.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to an intelligent power module and a chip. Background Art

[0002] With the development of power electronics technology, intelligent power modules have won an increasingly large application market with their high reliability, high system performance, and easy use. They are especially suitable for frequency converters and various inverter power supplies for driving motors. They are an ideal power electronic device for variable frequency speed regulation, electric traction, and variable frequency home appliances. However, the current intelligent power modules cannot meet the various usage needs of users. Summary of the invention

[0003] In view of the above problems, embodiments of the present invention are proposed to provide an intelligent power module and chip that overcome the above problems or at least partially solve the above problems.

[0004] In order to solve the above problems, an embodiment of the present invention discloses an intelligent power module, including:

[0005] A substrate, and a plurality of insulated gate bipolar transistors, an integrated circuit, a low voltage integrated circuit, a high voltage integrated circuit, a plurality of fast recovery diodes, a bottom dielectric isolation layer and a plurality of independent pins integrated on the substrate;

[0006] The plurality of insulated gate bipolar transistors are respectively connected to corresponding independent pins among the plurality of independent pins and corresponding independent pins among the plurality of fast recovery diodes;

[0007] The integrated circuit is respectively connected to corresponding insulated gate bipolar transistors among the plurality of insulated gate bipolar transistors and corresponding independent pins among the plurality of independent pins;

[0008] The low voltage integrated circuit is connected to the corresponding insulated gate bipolar transistors among the plurality of insulated gate bipolar transistors and the corresponding independent pins among the plurality of independent pins respectively;

[0009] The high-voltage integrated circuit is respectively connected to corresponding insulated gate bipolar transistors among the plurality of insulated gate bipolar transistors, the bottom dielectric isolation layer, and corresponding independent pins among the plurality of independent pins.

[0010] Optionally, the plurality of insulated gate bipolar transistors include a first insulated gate bipolar transistor and a second insulated gate bipolar transistor, and the plurality of fast recovery diodes include a first fast recovery diode and a second fast recovery diode;

[0011] The first insulated gate bipolar transistor is connected to the first fast recovery diode;

[0012] The second insulated gate bipolar transistor is connected to the second fast recovery diode.

[0013] Optionally, the plurality of independent pins include a first pin, a second pin, and a third pin;

[0014] The integrated circuit is electrically connected to the first pin, the second pin, and the third pin respectively.

[0015] Optionally, the first fast recovery diode and the second insulated gate bipolar transistor are connected by an aluminum wire.

[0016] Optionally, the first insulated gate bipolar transistor is connected to the high-voltage integrated circuit using a gold wire.

[0017] Optionally, the substrate includes a plurality of base islands, and the plurality of base islands are respectively used to encapsulate the plurality of insulated gate bipolar transistors and the plurality of fast recovery diodes, and ceramic spacers exist between each of the plurality of base islands.

[0018] Optionally, each of the plurality of base islands is made by a copper sintering process.

[0019] Optionally, the ceramic spacer is manufactured using an electrical isolation process.

[0020] Optionally, the first insulated gate bipolar transistor is used to detect an input current value, and when the input current value is greater than a preset current threshold, a first warning message is output.

[0021] Optionally, the first insulated gate bipolar transistor is used to detect an input voltage value, and when the input voltage value is greater than a preset voltage threshold, a second warning message is output.

[0022] Optionally, the high-voltage integrated circuit includes an upper bridge arm and a lower bridge arm, and the high-voltage integrated circuit is used to detect whether the upper bridge arm and the lower bridge arm are short-circuited. When the upper bridge arm and / or the lower bridge arm are short-circuited, the first insulated gate bipolar transistor is controlled to be disconnected.

[0023] Optionally, the high-voltage integrated circuit is used to detect whether the first insulated gate bipolar transistor fails, and output alarm information when the first insulated gate bipolar transistor fails.

[0024] The present invention also discloses a chip, which includes the intelligent power module as described in any one of the above.

[0025] The invention discloses an intelligent power module. The invention combines a chip for supporting an insulated gate bipolar transistor device and a chip for a fast recovery diode device into a composite package, thereby ensuring the original function and definition and reducing the volume of the device / module to the greatest extent. The module adopting the new layout not only realizes integration and miniaturization, but also is more conducive to the simplicity of application circuit wiring and convenient module installation. More integration of the module can not only reduce the numerous packaging processes, but also greatly reduce the production cost, and accelerate the rapid installation and use of application occasions. By directly packaging the driving chip of the insulated gate bipolar transistor device into the new layout, the distance between them is greatly reduced, the interference of the circuit in the outside world is reduced, and the accuracy of signal transmission is improved. By simultaneously packaging multiple insulated bipolar transistors and multiple fast recovery diodes into a substrate, multiple functions can be realized to meet the multiple functional requirements of users. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] Figure 1 A structural block diagram of an intelligent power module provided by an embodiment of the present invention is shown;

[0027] Figure 2 A structural block diagram of another intelligent power module provided by an embodiment of the present invention is shown;

[0028] Figure 3 A structural block diagram of a substrate provided by an embodiment of the present invention is shown. DETAILED DESCRIPTION

[0029] In order to make the above-mentioned objects, features and advantages of the present invention more obvious and easy to understand, the present invention is further described in detail below with reference to the accompanying drawings and specific embodiments.

[0030] IPM (Intelligent Power Module) has won an increasingly large application market with its high reliability, high system performance, and easy use. It is especially suitable for frequency converters and various inverter power supplies for driving motors. It is an ideal power electronic device for variable frequency speed regulation, electric traction, and variable frequency home appliances. In recent years, the market size of my country's electronic device industry has increased year by year, and the demand has also continued to increase. However, the development of intelligent power modules has always been plagued by deep-seated problems and structural contradictions, mainly manifested in: key technologies are controlled by others, and the intensity of R&D investment is still far behind that of developed countries. Compared with the single-tube drive solution, the biggest advantage of the intelligent power module is the reduced volume; integrating multiple functional chips in the same package can maximize the volume control under the premise of ensuring the heat dissipation requirements; small volume and high current are the main directions of future module development, but to achieve small volume, we can only start from three aspects. On the one hand, the chip size is reduced, by reducing the chip size to reduce the PAD area of ​​the module lead frame, or using a highly integrated chip. For example, the SLIMDIP module launched by Mitsubishi uses an RC-IGBT that integrates the functions of two chips, IGBT and FRD, which reduces the area of ​​FRD from the chip area, thereby reducing the chip area as a whole. The second aspect is to reduce the loss of power chips. The direct impact of the reduction in chip loss is the reduction of heat inside the module. If the heat is small, the required heat dissipation area will also be reduced accordingly, so that the module can be reduced in size. The third aspect is the development of module packaging materials. The thermal conductivity of the packaging material affects the thermal conductivity of the module, and modules with good thermal conductivity can quickly dissipate heat, which can reduce the size of the module accordingly.

[0031] IGBT (Insulated Gate Bipolar Transistor), as a core semiconductor device for controlling strong electricity from weak electricity, is widely used in traditional industries such as industry, 4C (communication, computer, consumer electronics, automotive electronics), aerospace, national defense and military industry, as well as strategic emerging industries such as rail transportation, new energy, smart grid, and new energy vehicles. For an IGBT cell, it can be divided into three parts: front structure, voltage-resistant layer and back collector area. The improvement of the cell structure is mainly carried out on the characteristics of these three parts. One or several parts can be optimized to improve the performance of the device.

[0032] Since the IGBT device needs a reverse current path when switching, the freewheeling diode should be connected in reverse parallel to the IGBT, which increases the area of ​​the device package and increases the parasitic inductance of the system, which can easily cause device failure in fast switching situations. Therefore, people consider integrating the reverse parallel freewheeling diode into the IGBT device, and then the reverse conducting type (abbreviated as RC-IGBT) appears. The reverse conducting IGBT has a collector short-circuit structure, and the collector area is composed of an island-shaped N+ region and a P+ region. By controlling the impurity concentration and life optimization of the P+ collector and N+ anode short-circuit layer, the compromise relationship between the saturation voltage drop, turn-off capability, forward conduction voltage drop of the freewheeling diode, and reverse recovery loss of the IGBT is well unified. The reverse conducting IGBT device reduces the chip package size, test cost and packaging cost, and improves the reliability of the power module, but it also has some disadvantages. There is a negative differential resistance area in the forward conduction state, the so-called snapback, which prevents the device from being fully turned on, especially at low temperatures.

[0033] With the development of power electronics technology, the application of various frequency conversion circuits and chopper circuits has been continuously expanded. In the main circuit of these power electronic circuits, whether it is a thyristor with commutation shutdown or a new power electronic device with self-shutdown capability, a fast recovery diode is required in parallel. In particular, the widespread application of power electronic devices represented by IGBT has put forward new requirements for power diodes, that is, they must have a short reverse recovery time and soft recovery characteristics. At present, the main direction of improving the performance of FRD (Fast Recovery Diode) devices is to compromise the performance of their on-state voltage drop, reverse recovery time and softness. Controlling the carrier emission efficiency and minority carrier lifetime, as well as adopting new device structures and new semiconductor materials are several main methods to improve the reverse recovery characteristics of fast recovery power diodes. Although the reverse recovery time of PiN diode is longer than that of Schottky diode, its high breakdown voltage, low leakage current and conduction voltage drop are incomparable to Schottky diode. By using the method of controlling carrier emission efficiency, P+PN-NN+ silicon fast recovery diode can be designed based on PiN diode. While weakening the minority carrier emission efficiency of PN junction and N-N+ high and low junction, the low conduction voltage drop characteristic of PiN diode is not affected, and the reverse peak current is also reduced. The reverse recovery characteristics of power diode can also be optimized by introducing minority carrier lifetime control zone in drift region, which is specifically divided into lateral control and longitudinal local or overall control. When Au is doped into silicon, the energy level of the formed recombination center is at a deeper position in the bandgap, which mainly determines the lifetime of small injected carriers and the generation lifetime of space charge region; when Pt is doped into silicon, the energy level of the formed recombination center is far away from the center of the bandgap, which mainly determines the lifetime of large injected carriers.

[0034] Due to the mutual constraints of parameters such as reverse recovery time, reverse peak current, forward voltage drop, reverse blocking voltage, etc., the application of fast recovery diodes made by methods such as doping Pt, Au or electron irradiation to reduce electron lifetime is limited in many power electronics fields. It is particularly important to produce an ultrafast recovery diode with a small reverse peak current, a short reverse recovery time and a large softness factor.

[0035] The above three types of semiconductor devices together constitute the necessary devices for PFC circuits. Currently, the most commonly used devices are separate IPM, IGBT and FRD devices used in application circuits to achieve their respective functions and performance indicators. This layout increases the packaging process and increases production costs.

[0036] One of the core concepts of the embodiments of the present invention is that the present invention not only ensures the original function and definition, but also minimizes the size of the device / module by composite packaging of the supporting chip of the insulated gate bipolar transistor device and the chip for the fast recovery diode device; the module using the new layout not only realizes integration and miniaturization, but also is more conducive to the simplicity of application circuit wiring and convenient module installation. The more integrated modules can not only reduce the numerous packaging processes, but also greatly reduce the production cost, while accelerating the rapid installation and use of application scenarios; by directly packaging the driver chip of the insulated gate bipolar transistor device into the new layout, the distance between them is greatly reduced, the interference of the circuit in the outside world is reduced, and the accuracy of signal transmission is improved; by packaging multiple insulated bipolar transistors and multiple fast recovery diodes into the substrate at the same time, multiple functions can be realized to meet the multiple functional requirements of users.

[0037] Reference Figure 1 , shows an intelligent power module 10, which may include:

[0038] A substrate 101, and a plurality of insulated gate bipolar transistors 102, an integrated circuit 103, a low voltage integrated circuit 104, a high voltage integrated circuit 105, a plurality of fast recovery diodes 106, a bottom dielectric isolation layer 107 and a plurality of independent pins integrated on the substrate 101;

[0039] A plurality of insulated gate bipolar transistors are respectively connected to corresponding independent pins among the plurality of independent pins and corresponding independent pins among the plurality of fast recovery diodes;

[0040] The integrated circuit is respectively connected to corresponding insulated gate bipolar transistors among the plurality of insulated gate bipolar transistors and corresponding independent pins among the plurality of independent pins;

[0041] A low voltage integrated circuit is connected to corresponding insulated gate bipolar transistors among the plurality of insulated gate bipolar transistors and corresponding independent pins among the plurality of independent pins respectively;

[0042] The high-voltage integrated circuit is respectively connected to corresponding insulated gate bipolar transistors among the plurality of insulated gate bipolar transistors, the bottom dielectric isolation layer, and corresponding independent pins among the plurality of independent pins.

[0043] In the embodiment of the present invention, the intelligent power module 101 can be packaged in DIP33, which usually refers to a dual in-line package (Dual In-line Package) with 33 pins. The substrate can be a direct bonded copper-ceramic substrate (DBC, Direct Bonded Copper on Ceramic Substrate), which is mainly composed of a ceramic insulating layer and a metal copper layer bonded to its upper and lower surfaces (or single side). Ceramic materials are usually selected from materials such as aluminum oxide (Al2O3) and aluminum nitride (AlN) that have high insulation, high thermal conductivity and good chemical stability; the metal copper layer provides excellent conductivity and processability, which is convenient for the subsequent circuit production and connection with other electronic components.

[0044] The intelligent power module 10 can be applied to various medium and low power motor drive, power conversion, inverter and other applications, such as household appliances, industrial control, electric vehicle chargers, solar inverters and other scenarios.

[0045] Insulated gate bipolar transistors can use 40A-IGBT. 40A-IGBT is a high-current, high-voltage power semiconductor device, widely used in various power electronic equipment, such as inverters, motor drives, power conversion, etc. 40A usually refers to the rated current of the device, that is, under certain temperature and voltage conditions, the maximum current that the device can continuously pass. This type of insulated gate bipolar transistor has the following characteristics: High current capability: The current capability of 40A enables IGBT devices to handle larger power and is suitable for high-power power electronic equipment; High voltage level: IGBT devices usually have higher voltage levels, such as 600V, 1200V, etc., and can withstand high voltages, which are suitable for high-voltage power systems; Fast switching performance: IGBT devices have faster switching speeds, which can reduce switching losses and improve the efficiency of power electronic equipment; Built-in protection functions: Some IGBT devices have built-in overcurrent, overheating and other protection functions, which can improve the safety and stability of the system.

[0046] When selecting a 40A IGBT device, in addition to considering the current and voltage levels, it is also necessary to consider factors such as switching frequency, on-resistance, heat dissipation performance, and packaging form to ensure that the device can meet the needs of specific applications. At the same time, reasonable heat dissipation design and circuit layout are also important factors to ensure the normal operation of IGBT devices. In practical applications, it is usually necessary to use a drive circuit and a protection circuit to ensure the normal operation and protection of IGBT devices.

[0047] It should be noted that the fast recovery diode can use 20A FRD. 20A FRD is a diode that can quickly restore reverse blocking capability. It is mainly used in power electronic equipment, such as inverters, switching power supplies, motor drives, etc. 20A usually refers to the rated current of the diode, that is, the maximum current that the diode can continuously pass under certain temperature and voltage conditions. Its main features and application characteristics are as follows: Fast recovery time: Compared with ordinary diodes, fast recovery diodes have a shorter recovery time, which means that when switching from the forward conduction state to the reverse blocking state, the diode can restore the reverse blocking capability faster, reduce switching losses, and improve the efficiency of power electronic equipment; High current capability: The current capability of 20A enables fast recovery diodes to handle larger currents and is suitable for high-power power electronic equipment; High voltage level: Fast recovery diodes usually have higher voltage levels, such as 600V, 1200V, etc., can withstand high voltages, and are suitable for high-voltage power systems.

[0048] 20A fast recovery diodes are widely used in various power electronic devices, such as inverters, switching power supplies, motor drives, uninterruptible power supplies (UPS), etc., especially in situations where fast switching and high efficiency are required.

[0049] When selecting a 20A fast recovery diode, in addition to considering the current and voltage levels, it is also necessary to consider factors such as recovery time, forward voltage drop, reverse leakage current, heat dissipation performance, and packaging form to ensure that the diode can meet the needs of specific applications. At the same time, reasonable heat dissipation design and circuit layout are also important factors to ensure the normal operation of the fast recovery diode. In practical applications, fast recovery diodes are usually used in conjunction with power switching devices (such as IGBTs or MOSFETs) to achieve efficient power conversion.

[0050] The present invention combines the supporting chip of the insulated gate bipolar transistor device and the chip for the fast recovery diode device into a composite package, thereby ensuring the original function and definition and reducing the volume of the device / module to the greatest extent; the module adopting the new layout not only realizes integration and miniaturization, but also is more conducive to the simplicity of application circuit wiring and convenient module installation. The more integrated modules can not only reduce the numerous packaging processes, but also greatly reduce the production cost, and accelerate the rapid installation and use of application occasions; by directly packaging the driving chip of the insulated gate bipolar transistor device into the new layout, the distance between them is greatly reduced, the interference of the circuit in the outside world is reduced, and the accuracy of signal transmission is improved; by packaging multiple insulated bipolar transistors and multiple fast recovery diodes into the substrate at the same time, multiple functions can be realized to meet the multiple functional requirements of users.

[0051] In one embodiment of the present invention, a plurality of insulated gate bipolar transistors include a first insulated gate bipolar transistor and a second insulated gate bipolar transistor, and a plurality of fast recovery diodes include a first fast recovery diode and a second fast recovery diode; the first insulated gate bipolar transistor is connected to the first fast recovery diode; and the second insulated gate bipolar transistor is connected to the second fast recovery diode.

[0052] In the embodiment of the present invention, Figure 2 The structure block diagram of another intelligent power module 10 provided by an embodiment of the present invention is shown, the plurality of insulated gate bipolar transistors 102 include a first insulated gate bipolar transistor 1021 and a second insulated gate bipolar transistor 1022, the plurality of fast recovery diodes 106 may include a first fast recovery diode 1061 and a second fast recovery diode 1062, the first insulated gate bipolar transistor 1021 is connected to the first fast recovery diode 1061, the second insulated gate bipolar transistor 1022 is connected to the second fast recovery diode 1062

[0053] In one embodiment of the present invention, the plurality of independent pins include a first pin, a second pin, and a third pin; the integrated circuit is electrically connected to the first pin, the second pin, and the third pin, respectively.

[0054] In the embodiment of the present invention, Figure 2 The plurality of independent pins may include a first pin A1 , a second pin A2 , and a third pin A3 ; the integrated circuit 103 may be connected to the first pin A1 , the second pin A2 , and the third pin A3 , respectively.

[0055] In one embodiment of the present invention, the first fast recovery diode and the second insulated gate bipolar transistor are connected by an aluminum wire.

[0056] In the embodiment of the present invention, the first fast recovery diode 1021 and the second insulated gate bipolar transistor 1061 can be connected by aluminum wire. Through a suitable bonding process, the aluminum wire can form a reliable mechanical connection and a good electrical connection with the device pin. During the product's service life, it can withstand a certain degree of temperature changes, mechanical vibrations and other external factors, thereby ensuring the long-term stability of the circuit connection, reducing the probability of circuit failures caused by loose connections, disconnections and other problems, and improving the overall reliability and service life of the product.

[0057] In one embodiment of the present invention, the first insulated gate bipolar transistor is connected to the high voltage integrated circuit using a gold wire.

[0058] In an embodiment of the present invention, the first insulated gate bipolar transistor 1021 and the high-voltage integrated circuit 105 can be connected by gold wire. Gold is a metal with excellent conductivity and extremely low resistivity. When the insulated gate bipolar transistor and the high-voltage integrated circuit are connected by gold wire, a current path with extremely low resistance can be constructed between the two. During signal transmission and power transmission, power loss is extremely small, and electrical connection can be efficiently achieved to ensure the precise realization of circuit functions. For example, in high-voltage, high-current power electronic conversion circuits (such as motor-driven inverter circuits), it can minimize the heat and power loss caused by the connection line resistance, thereby improving the overall efficiency of the circuit.

[0059] In one embodiment of the present invention, the substrate includes a plurality of base islands, the plurality of base islands are respectively used to package a plurality of insulated gate bipolar transistors and a plurality of fast recovery diodes, and ceramic spacers exist between each of the plurality of base islands.

[0060] In the embodiment of the present invention, Figure 3 , shows a schematic diagram of a substrate 101 provided in an embodiment of the present invention, the substrate 101 may include a plurality of base islands 1011, 1012, 1013, 1014, 1015, 1016, the plurality of base islands are respectively used to encapsulate a plurality of insulated gate bipolar transistors and a plurality of fast recovery diodes, and there is a ceramic gap A between each of the plurality of base islands.

[0061] In an embodiment of the present invention, each of the plurality of base islands is made by a copper sintering process.

[0062] In the embodiment of the present invention, each of the plurality of base islands can be made by a copper sintering process. The copper sintering process is a process for sintering copper materials at high temperatures to prepare copper products with specific properties and structures. The following are some common types of copper sintering processes:

[0063] Traditional sintering method: copper powder or copper particles are heated at high temperature to cause diffusion and combination between the particles to form a dense copper product.

[0064] Spark plasma sintering (SPS): Using the high temperature and high pressure generated by plasma, copper powder is sintered into dense products in a short time. SPS has the advantages of fast heating speed, short sintering time and high density.

[0065] Hot pressing sintering method: The copper powder is heated and pressed at high temperature and high pressure to sinter it into a dense product. The hot pressing sintering method can produce high-strength and high-density copper products.

[0066] Liquid phase sintering method: Add an appropriate amount of liquid phase sintering aid to the copper powder, melt the aid at high temperature, promote the diffusion and bonding between copper particles, and form a dense copper product.

[0067] Microwave sintering method: using the heating effect of microwaves, copper powder is sintered into dense products in a short time. Microwave sintering method has the advantages of uniform heating and fast sintering speed.

[0068] The selection of copper sintering process depends on factors such as the performance requirements, shape and size of the copper products. In practical applications, it is necessary to select the appropriate copper sintering process according to the specific situation to ensure the quality and performance of the copper products.

[0069] The specific process used in the present invention is not limited here.

[0070] In one embodiment of the present invention, the ceramic spacer is manufactured by an electrical isolation process.

[0071] In the embodiment of the present invention, the ceramic spacer can be made by an electrical isolation process. The electrical isolation process is a key technology widely used in the electronic and electrical fields, which aims to achieve effective isolation of electrical signals between different circuit parts, prevent current, electromagnetic interference, etc. from being directly conducted between them, and ensure safe, stable and reliable operation of the circuit. Specifically, there are the following methods:

[0072] Optocoupler isolation: Optocouplers (optocouplers) consist of light-emitting devices (such as light-emitting diodes) and photosensitive devices (such as phototransistors), and transmit information through optical signals to achieve isolation. When an electrical signal is input to one end of the light-emitting device, the light-emitting device emits light, and the light shines on the photosensitive device, causing it to generate a corresponding electrical signal output. Since the input and output ends transmit information through light, and light itself does not conduct current, the effect of electrical isolation is achieved. For example, in a switching power supply circuit, an optocoupler is used to isolate the control circuit (low-voltage side) from the power output circuit (high-voltage side). The electrical signal output by the control circuit drives the light-emitting diode of the optocoupler to emit light, and the optical signal is transmitted to the phototransistor on the high-voltage side. The power output circuit is then controlled according to the signal output by the phototransistor. In this way, the high and low voltage circuits are electrically isolated, avoiding possible faults and interference on the high-voltage side that affect the normal operation of the low-voltage side circuit.

[0073] Optocoupler isolation application scenarios: commonly used for high and low voltage isolation in power supply circuits, isolation between different level systems in digital communication circuits, isolation between PLC (programmable logic controller) input and output ports and external devices in industrial control, etc., which can effectively protect sensitive control circuits from external high voltage, high current and electromagnetic interference.

[0074] Transformer isolation: Based on the principle of electromagnetic induction, the transformer consists of a primary coil, a secondary coil and an iron core (or magnetic core). When an alternating current is input into the primary coil, an alternating magnetic field will be generated in the iron core, and this alternating magnetic field will induce an alternating electromotive force in the secondary coil, thereby realizing the transfer of electric energy from the primary side to the secondary side. At the same time, because there is no direct electrical connection between the primary and secondary coils (only magnetic circuit coupling), the effect of electrical isolation is achieved. For example, in an audio power amplifier, in order to electrically separate the front-stage small signal processing circuit from the rear-stage high-power output circuit, and to prevent the fluctuation of the rear-stage high current and high voltage from being fed back to the front stage to affect the sound quality, a transformer is used for isolation and signal transmission; the high-frequency transformers of some switching power supplies also use this principle to isolate the mains input side (high-voltage AC side) from the DC output side (low-voltage DC side) to ensure power safety and circuit stability.

[0075] Transformer isolation application scenarios: widely used in grid connections of different voltage levels in power systems (such as using transformers in substations to achieve isolation and power conversion between high-voltage transmission lines and low-voltage distribution networks), power modules of electronic equipment (such as using transformers inside laptop power adapters to isolate the mains power from the power used by the computer motherboard), signal coupling and isolation in communication equipment, etc., which can achieve both voltage conversion and electrical isolation.

[0076] Relay isolation: A relay is an electrical component that uses electromagnetic force to control the opening and closing of contacts. When the relay coil is energized, the electromagnetic force generated will attract the armature, causing the contacts to close or open, and the signal or electrical energy is transmitted by controlling the connection between the contacts and the external circuit. The coil side and the contact side are electrically independent of each other, which plays an isolation role. For example, in an industrial automation control system, the weak current signal output by the PLC (programmable logic controller) can control the on and off of the relay coil, and the relay contacts can be connected to the strong current motor control circuit, so that the weak current signal can be used to control the start and stop of the strong current equipment, and at the same time, the strong and weak current circuits are electrically isolated to prevent the strong current from damaging the weak current system.

[0077] Relay isolation application scenarios: mostly used in the field of industrial control to isolate the control circuit from the circuit of the controlled high-power, high-voltage equipment. For example, relays are used to isolate the control circuit from the circuits of actuators such as motors and solenoid valves on automated assembly lines. It is also used in smart home systems to isolate the high-voltage circuits of smart controllers and household appliances (such as air conditioners, water heaters, etc.) through relays to ensure the safe use of smart devices.

[0078] Capacitor isolation: Isolation is achieved by using the characteristic of capacitors that they can pass alternating currents while blocking direct currents. For AC signals, capacitors will continuously charge and discharge, so that the signal can be transmitted to the other side through the capacitor to a certain extent, but the DC component and DC circuits with different potentials cannot directly conduct current through the capacitor, thereby achieving electrical isolation. In some digital communication lines, such as high-speed digital signal transmission, capacitor isolation can block DC bias and only allow AC signal components to pass through, while preventing interference and damage between different circuits due to DC potential differences, ensuring accurate signal transmission and circuit independence.

[0079] Capacitor isolation application scenarios: commonly used in communication interface circuits, some audio circuits, and some special circuits that need to isolate DC components while transmitting AC signals. For example, the audio output interface on a computer motherboard is connected to the external speaker. Capacitor isolation is sometimes used to improve the quality of audio signal transmission and prevent the influence of DC potential between different circuits.

[0080] Magnetic coupling isolation: It is similar to the electromagnetic induction principle of transformer isolation, but it generally adopts a special magnetic coupling structure, such as planar transformers, magnetic films, etc., and optimizes the magnetic circuit design to achieve tighter and more efficient magnetic coupling, ensuring electrical isolation while transmitting signals. Taking the planar transformer as an example, its primary and secondary coils are printed on the circuit board with a planar structure, and electromagnetic induction is used to transmit signals and energy. There is a good insulation layer between the primary and secondary, which ensures the electrical isolation effect. It is widely used in some miniaturized electronic devices that have high space requirements and require efficient isolation (such as the internal circuit of mobile phone chargers, portable medical equipment, etc.), and can achieve reliable electrical isolation and conversion of electric energy and signals in a limited space.

[0081] Magnetic coupling isolation application scenarios: Suitable for miniaturized and highly integrated electronic devices, especially in some circuits that need to be isolated in a compact space and have certain requirements on efficiency and performance, such as power management and charging circuits of smart wearable devices, miniaturized sensor signal processing and transmission circuits, etc., to ensure the safe and stable operation of equipment in a small space.

[0082] The specific electrical isolation method used in the present invention is not limited here.

[0083] In one embodiment of the present invention, the first insulated gate bipolar transistor is used to detect an input current value, and when the input current value is greater than a preset current threshold, a first warning message is output.

[0084] In an embodiment of the present invention, the first insulated gate bipolar transistor 1021 can detect the input current value of the pin, and then determine whether the current is abnormal based on the size of the input current value. Specifically, it can determine whether the input current value is greater than a preset current threshold. If it is greater than the preset current threshold, it means that the current is abnormal and a first warning message is output. The first warning message is used to indicate current abnormality. The preset current threshold refers to the maximum current value during normal operation, which can be set according to user needs.

[0085] In one embodiment of the present invention, the first insulated gate bipolar transistor is used to detect an input voltage value, and when the input voltage value is greater than a preset voltage threshold, a second warning message is output.

[0086] In an embodiment of the present invention, the first insulated gate bipolar transistor 1021 is also used to detect the input voltage value of the pin, and then determine whether the operating voltage is normal based on the input voltage value. Specifically, it can be used to determine whether the input voltage is greater than a preset voltage threshold. The preset voltage threshold refers to the maximum operating voltage when the circuit is working normally. If the input voltage is greater than the preset voltage threshold, a second alarm message is output, and the second alarm message is used to indicate that the input voltage is abnormal.

[0087] In one embodiment of the present invention, a high-voltage integrated circuit includes an upper bridge arm and a lower bridge arm, and the high-voltage integrated circuit is used to detect whether a short circuit occurs in the upper bridge arm and the lower bridge arm. When a short circuit occurs in the upper bridge arm and / or the lower bridge arm, the first insulated gate bipolar transistor is controlled to be disconnected.

[0088] In the embodiment of the present invention, the high-voltage integrated circuit 104 may include an upper bridge arm and a lower bridge arm. The high-voltage integrated circuit 104 may detect whether a short circuit occurs in the upper bridge arm and the lower bridge arm. When the upper bridge arm and / or the lower bridge arm are short-circuited, the first insulated gate bipolar transistor is controlled to be disconnected, thereby ensuring normal operation of the circuit. The high-voltage integrated circuit can detect whether the upper bridge arm or the lower bridge arm is short-circuited, which provides a clear direction for subsequent troubleshooting. Maintenance personnel can specifically check the components and circuits related to the upper bridge arm or the lower bridge arm without having to conduct a large-scale investigation of the entire circuit, which greatly improves the efficiency of fault diagnosis, shortens maintenance time, reduces equipment downtime, and reduces indirect losses caused by equipment failure.

[0089] In one embodiment of the present invention, a high voltage integrated circuit is used to detect whether a first insulated gate bipolar transistor fails, and outputs alarm information when the first insulated gate bipolar transistor fails.

[0090] In the embodiment of the present invention, it should be noted that the alarm information may include the following modes: 1. Sound alarm: Buzzer: The buzzer emits a continuous or intermittent sound to remind the user. Voice prompt: The built-in voice module plays a pre-recorded voice prompt to inform the user of the specific alarm information.

[0091] 2. Visual alarms: LED indicators: Use different colors of LED lights (such as red, yellow, and green) to indicate different alarm states. Display screen: Display specific alarm information on the device's display screen, including current value, threshold, and timestamp. Flashlight: Install a flashlight on the outside or inside of the device to attract attention by flashing.

[0092] 3. Text Alert: SMS notification: send the alert information to the preset mobile phone number via SMS service. Email notification: send the alert information to the preset email address via email.

[0093] 4. Network alarm: Push notification: Push alarm notification to users through mobile applications or web platforms. Remote monitoring system: Send alarm information to the remote monitoring center for processing by professionals.

[0094] The specific method used to output the alarm information is not limited here. In the embodiment of the present invention, under the high-voltage circuit environment, IGBT failure may cause some safety hazards. For example, the high temperature generated by the short circuit may cause a fire, or leakage and arcing may occur due to the destruction of electrical insulation, which poses a threat to the personal safety of on-site operators and may also cause damage to the surrounding environment. Timely alarm information can enable staff to quickly take corresponding safety measures (such as cutting off power, starting fire extinguishing equipment, etc.), effectively avoid the occurrence of these dangerous situations, protect the lives and health of personnel and the safety of the surrounding environment, and comply with relevant safety regulations and operating specifications.

[0095] The present invention combines the supporting chip of the insulated gate bipolar transistor device and the chip for the fast recovery diode device into a composite package, thereby ensuring the original function and definition and reducing the volume of the device / module to the greatest extent; the module adopting the new layout not only realizes integration and miniaturization, but also is more conducive to the simplicity of application circuit wiring and convenient module installation. The more integrated modules can not only reduce the numerous packaging processes, but also greatly reduce the production cost, and accelerate the rapid installation and use of application occasions; by directly packaging the driving chip of the insulated gate bipolar transistor device into the new layout, the distance between them is greatly reduced, the interference of the circuit in the outside world is reduced, and the accuracy of signal transmission is improved.

[0096] The present invention also discloses a chip, which includes the intelligent power module as described in any one of the above.

[0097] The invention discloses an intelligent power module. The invention can ensure the original function and definition and reduce the volume of the device / module to the greatest extent by composite packaging of a supporting chip for an insulated gate bipolar transistor device and a chip for a fast recovery diode device. The module adopting the new layout not only realizes integration and miniaturization, but also is more conducive to the simplicity of application circuit wiring and convenient module installation. More integration of the module can not only reduce the numerous packaging processes, but also greatly reduce the production cost, and accelerate the rapid installation and use of application occasions. By directly packaging the driving chip of the insulated gate bipolar transistor device into the new layout, the distance between them is greatly reduced, the interference of the circuit in the outside world is reduced, and the accuracy of signal transmission is improved.

[0098] As for the device embodiment, since it is basically similar to the method embodiment, the description is relatively simple, and the relevant parts can be referred to the partial description of the method embodiment.

[0099] The various embodiments in this specification are described in a progressive manner, and each embodiment focuses on the differences from other embodiments. The same or similar parts between the various embodiments can be referenced to each other.

[0100] It will be appreciated by those skilled in the art that the embodiments of the present invention may be provided as methods, devices, or computer program products. Therefore, the embodiments of the present invention may take the form of a complete hardware embodiment, a complete software embodiment, or an embodiment combining software and hardware. Moreover, the embodiments of the present invention may take the form of a computer program product implemented on one or more computer-usable storage media (including but not limited to disk storage, CD-ROM, optical storage, etc.) containing computer-usable program codes.

[0101] The embodiments of the present invention are described with reference to the flowcharts and / or block diagrams of the methods, terminal devices (systems), and computer program products according to the embodiments of the present invention. It should be understood that each process and / or block in the flowchart and / or block diagram, as well as the combination of the processes and / or blocks in the flowchart and / or block diagram, can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, a special-purpose computer, an embedded processor, or other programmable data processing terminal device to generate a machine, so that the instructions executed by the processor of the computer or other programmable data processing terminal device generate instructions for implementing the processes in the flowchart and / or block diagram. Figure 1 A process or multiple processes and / or boxes Figure 1 A device that provides the functions specified in a block or multiple blocks.

[0102] These computer program instructions may also be stored in a computer-readable memory capable of directing a computer or other programmable data processing terminal device to operate in a specific manner, so that the instructions stored in the computer-readable memory produce a manufactured product including an instruction device, which implements the process Figure 1 A process or multiple processes and / or boxes Figure 1 A function specified in one or more boxes.

[0103] These computer program instructions can also be loaded onto a computer or other programmable data processing terminal device so that a series of operating steps are executed on the computer or other programmable terminal device to produce a computer-implemented process, thereby providing instructions for executing on the computer or other programmable terminal device to implement the process. Figure 1 A process or multiple processes and / or boxes Figure 1 The steps for the functions specified in one or more boxes.

[0104] Although the preferred embodiments of the present invention have been described, those skilled in the art may make additional changes and modifications to these embodiments once they have learned the basic creative concept. Therefore, the appended claims are intended to be interpreted as including the preferred embodiments and all changes and modifications that fall within the scope of the embodiments of the present invention.

[0105] Finally, it should be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprises" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or terminal device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or terminal device. In the absence of further restrictions, the elements defined by the sentence "including one..." do not exclude the existence of other identical elements in the process, method, article or terminal device including the elements.

[0106] The above is a detailed introduction to an intelligent power module and chip provided by the present invention. Specific examples are used in this article to illustrate the principles and implementation methods of the present invention. The description of the above embodiments is only used to help understand the method of the present invention and its core idea. At the same time, for those skilled in the art, according to the idea of ​​the present invention, there will be changes in the specific implementation methods and application scopes. In summary, the content of this specification should not be understood as limiting the present invention.

Claims

1. An intelligent power module, characterized in that: include: A substrate, and a plurality of insulated gate bipolar transistors, an integrated circuit, a low voltage integrated circuit, a high voltage integrated circuit, a plurality of fast recovery diodes, a bottom dielectric isolation layer and a plurality of independent pins integrated on the substrate; The plurality of insulated gate bipolar transistors are respectively connected to corresponding independent pins among the plurality of independent pins and corresponding independent pins among the plurality of fast recovery diodes; The integrated circuit is respectively connected to corresponding insulated gate bipolar transistors among the plurality of insulated gate bipolar transistors and corresponding independent pins among the plurality of independent pins; The low voltage integrated circuit is connected to the corresponding insulated gate bipolar transistors among the plurality of insulated gate bipolar transistors and the corresponding independent pins among the plurality of independent pins respectively; The high-voltage integrated circuit is respectively connected to corresponding insulated gate bipolar transistors among the plurality of insulated gate bipolar transistors, the bottom dielectric isolation layer, and corresponding independent pins among the plurality of independent pins.

2. The intelligent power module according to claim 1, characterized in that: The plurality of insulated gate bipolar transistors include a first insulated gate bipolar transistor and a second insulated gate bipolar transistor, and the plurality of fast recovery diodes include a first fast recovery diode and a second fast recovery diode; The first insulated gate bipolar transistor is connected to the first fast recovery diode; The second insulated gate bipolar transistor is connected to the second fast recovery diode.

3. The intelligent power module according to claim 1, characterized in that: The plurality of independent pins include a first pin, a second pin, and a third pin; The integrated circuit is electrically connected to the first pin, the second pin, and the third pin respectively.

4. The intelligent power module according to claim 2, characterized in that: The first fast recovery diode and the second insulated gate bipolar transistor are connected by using an aluminum wire.

5. The intelligent power module according to claim 2, characterized in that: The first insulated gate bipolar transistor is connected to the high voltage integrated circuit by using a gold wire.

6. The intelligent power module according to claim 1, characterized in that: The substrate comprises a plurality of base islands, wherein the plurality of base islands are respectively used to package the plurality of insulated gate bipolar transistors and the plurality of fast recovery diodes, and ceramic spacers are provided between the plurality of base islands.

7. The intelligent power module according to claim 6, characterized in that: Each of the plurality of base islands is made by a copper sintering process.

8. The intelligent power module according to claim 6, characterized in that: The ceramic spacer is manufactured by adopting an electrical isolation process.

9. The intelligent power module according to claim 2, characterized in that: The first insulated gate bipolar transistor is used to detect an input current value, and when the input current value is greater than a preset current threshold, a first warning message is output.

10. The intelligent power module according to claim 2, characterized in that: The first insulated gate bipolar transistor is used to detect an input voltage value, and when the input voltage value is greater than a preset voltage threshold, a second warning message is output.

11. The intelligent power module according to claim 2, characterized in that: The high-voltage integrated circuit includes an upper bridge arm and a lower bridge arm, and the high-voltage integrated circuit is used to detect whether the upper bridge arm and the lower bridge arm are short-circuited. When the upper bridge arm and / or the lower bridge arm are short-circuited, the first insulated gate bipolar transistor is controlled to be disconnected.

12. The intelligent power module according to claim 2, characterized in that: The high-voltage integrated circuit is used to detect whether the first insulated gate bipolar transistor fails, and output alarm information when the first insulated gate bipolar transistor fails.

13. A chip, characterized in that: The chip includes an intelligent power module as claimed in any one of claims 1 to 12.

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