Two-dimensional laminated extensive spectrum sensitive light band detector and preparation method thereof

Abstract

The invention discloses a two-dimensional laminated extensive spectrum sensitive light band detector and a preparation method thereof. The detector comprises a substrate contact, a substrate, an insulating layer, a first laminated layer, a second laminated layer, a third laminated layer, an emitting electrode, a base electrode and a collector electrode, the insulating layer is laminated on the substrate, and the emitting electrode, the base electrode and the collector electrode are sequentially arranged on the side, away from the substrate, of the insulating layer. The emitter electrode, the base electrode and the collector electrode are respectively contacted with the third lamination layer, the second lamination layer and the first lamination layer, the emitter electrode, the base electrode and the collector electrode are configured with bias voltage, the bias voltage is generated by two voltage sources, and any one of the emitter electrode, the base electrode and the collector electrode is used as a common grounding point by the two voltage sources. Two bias voltages are configured to the remaining two electrodes, respectively. The two-dimensional laminated extensive spectrum sensitive light band detector is of an on-chip integrated structure and has the advantages of being miniature, low in power consumption and capable of achieving broadband detection.

Description

Technical Field

[0001] The present invention relates to the technical field of photoelectric detectors, and in particular to a two-dimensional stacked pan-spectral sensitive light band detector and a preparation method thereof. Background Art

[0002] As a core device that converts optical signals into electrical signals, photodetectors have important application value in many fields such as communications, medical treatment, security, astronomy, and environmental monitoring. For example, in optical fiber communication systems, photodetectors are key components for achieving high-speed data transmission; in medical imaging, their sensitivity and resolution directly affect the accuracy of diagnosis. In addition, with the rapid development of artificial intelligence and Internet of Things technologies, the demand for photodetectors in smart devices is also growing.

[0003] However, although the existing photodetector technology has made significant progress, there are still some problems that need to be solved. For example, traditional photodetectors usually have a narrow detection window in the spectral range and cannot cover the wide spectral range from ultraviolet to mid-infrared; at the same time, there is often a trade-off between the response speed and sensitivity of the detector. In addition, due to the limitations of device materials and processes, the integration and performance of multi-spectral or hyperspectral detectors are also difficult to meet the requirements of practical applications. These problems limit the widespread application of photodetectors in high-precision and multi-functional scenarios.

[0004] Spectrally resolved detection technology has received increasing attention in recent years. Spectrally resolved detectors can simultaneously obtain the intensity and spectral distribution information of light signals in a single detection, and they play an irreplaceable role in environmental monitoring, remote sensing, precision analysis and new imaging systems. For example, in the field of gas detection, spectrally resolved detectors can achieve simultaneous monitoring of multiple gases; in astronomical research, they can provide more dimensional spectral information of celestial bodies, thereby revealing the physical properties of deep space objects. However, currently spectrally resolved detectors generally face challenges such as poor spectral sensitivity, large footprint, and complex manufacturing, and breakthroughs in new device structures and material systems are urgently needed. Summary of the invention

[0005] The purpose of the present invention is to overcome the shortcomings of the prior art and provide a two-dimensional stacked pan-spectral sensitive light band detector and a method for preparing the same. The present invention can solve the problems of the prior art detector being insensitive to the spectrum, occupying a large area, and having a complex manufacturing process.

[0006] To achieve the above object, the technical solution adopted by the present invention is:

[0007] In a first aspect, the present invention provides a two-dimensional stacked pan-spectral sensitive light band detector, which includes, from bottom to top, a substrate contact, a substrate, an insulating layer, a first stack, a second stack, a third stack, an emitter, a base, and a collector, wherein the insulating layer is stacked on the substrate, the emitter, the base, and the collector are arranged on the side of the insulating layer away from the substrate, and the emitter, the base, and the collector are in contact with the third stack, the second stack, and the first stack, respectively; the emitter, the base, and the collector are configured with a bias voltage, and the bias voltage is generated by two voltage sources, and the two voltage sources use any one of the emitter, the base, and the collector as a common grounding point, and configure two bias voltages to the remaining two electrodes, respectively; a third bias voltage is configured between the substrate contact and any one of the emitter, the base, and the collector to generate a vertical electric field directed from the substrate to the first stack, the second stack, and the third stack.

[0008] The vertical electric field will affect the energy band bending and carrier concentration of the first stack, the second stack and the third stack, so that the photocurrent of the first stack, the second stack and the third stack changes, thereby regulating the light response.

[0009] The first stack, the second stack and the third stack of the present invention are all two-dimensional material stacks, which are heterogeneous structures formed by vertically stacking in any order.

[0010] When the device is irradiated by a light source, the carriers in the two-dimensional semiconductor material are excited by light, thereby generating a photocurrent, and different photocurrent components are obtained at the three ports. Due to the difference in the energy of photons from light sources of different wavelengths, different photoelectric response mechanisms will be caused. Photons with a wavelength of 638nm will cause the valence band electrons in the three-layer material to transition to the conduction band, photons with a wavelength of 1064nm will cause the valence band electrons in the middle layer of the two-dimensional material to transition to the conduction band of the top layer of the two-dimensional material, and photons with a wavelength of 1550nm will cause the conduction band electrons in the top layer of the two-dimensional material to transition to the conduction band of the middle layer of the two-dimensional material. Due to the differences in the photoelectric response mechanisms of the three bands, the collector and base port current waveforms will be different, resulting in a response with obvious distinction to light sources of different bands. The intensity of the irradiated light source and the light frequency band are reflected by the differences in the waveform and polarity of the photocurrent.

[0011] Preferably, the materials of the first stack, the second stack and the third stack include at least one of transition metal chalcogenides, transition metal carbon / nitrides, graphene, graphene oxide and black phosphorus.

[0012] Preferably, the thickness of the first stack, the second stack and the third stack are all 2-10 nm, and the area of ​​the stack regions are all 50-2000 μm. 2 .

[0013] Preferably, the substrate is metal, silicon or an insulating substrate with a conductive film coated on the surface.

[0014] Preferably, the thickness of the insulating layer is 300-700 nm.

[0015] Preferably, the material of the insulating layer includes at least one of silicon dioxide, aluminum oxide, hafnium oxide, silicon nitride, titanium oxide and zirconium oxide.

[0016] In a second aspect, the present invention further provides a method for preparing a two-dimensional stacked pan-spectral sensitive light band detector, comprising the following steps:

[0017] S1. Preparing an insulating layer on a substrate;

[0018] S2. The first stack, the second stack, and the third stack are transferred to the surface of the insulating layer by a transfer, growth, or deposition method;

[0019] S3. The sample is placed in a nitrogen atmosphere for thermal annealing;

[0020] S4. Spin-coat the photoresist on the surface of the insulating layer and the first stack, the second stack, and the third stack using a coating machine; expose the photoresist using a photolithography system, and then develop in a developer to obtain an emitter, base, and collector pattern;

[0021] S5. Plate a layer of metal on the surface of the sample after S4, then place the sample in an acetone solution to remove the photoresist in the unexposed area and the metal above it, to obtain a sample with an emitter, a base, and a collector.

[0022] In a third aspect, the present invention further provides a technology for using a two-dimensional stacked pan-spectral sensitive optical band detector in optical band detection, wherein the optical band detection method comprises the following steps:

[0023] S101. placing the two-dimensional stacked pan-spectral sensitive light band detector in a dark environment;

[0024] S201. Select any one of the emitter, base, and collector electrodes on the first stack, the second stack, and the third stack as a grounding point, apply first and second bias voltages to the other two electrodes, so that a loop current is formed inside the first stack, the second stack, and the third stack; and apply a third bias voltage between the substrate contact and any one of the emitter, base, and collector electrodes;

[0025] S301. Start recording the current-time relationship of multiple electrode ports;

[0026] S401. After a period of time, a light source of known wavelength is irradiated onto the surface of the device. After a period of time t, the device is returned to a dark environment again, and the current-time waveform during the optical switching process is recorded, and the current-light response waveform characteristics are recorded; light sources of different wavelengths are continuously replaced, and the above steps are repeated;

[0027] S501. Replace the light source in S401 with the light source to be tested, and repeat the steps in S401; obtain the current-light response waveform characteristics of multiple ports, and compare them with the calibrated current-light response waveform characteristics described in S401, and obtain the most similar one as the band of the corresponding light source.

[0028] Preferably, the wavelength band of the light source to be measured is from visible light to near infrared, and the wavelength range is 405-1550nm.

[0029] Preferably, the selected common ground point is the emitter, the first bias voltage is loaded between the collector and the emitter, which is 1V, the second bias voltage is loaded between the base and the emitter, which is 0.5V, and the third bias voltage is loaded between the substrate contact and the emitter, which is 0V.

[0030] Preferably, the optical band detection method comprises the following steps:

[0031] S102. placing the two-dimensional stacked pan-spectral sensitive light band detector in a dark environment;

[0032] S202. any one of the emitter, base, and collector electrodes on the first stack, the second stack, and the third stack is selected as a grounding point, and the first and second bias voltages are applied to the other two electrodes to form a loop current inside the first stack, the second stack, and the third stack; and a third bias voltage is applied between the substrate contact and any one of the emitter, base, and collector electrodes;

[0033] S302. Start recording the current-time relationship of multiple electrode ports;

[0034] S402. After a period of time, multiple light source combinations of known wavelengths are sequentially irradiated onto the device surface, and the device is returned to a dark environment again, and the current-time waveform during the optical switching process is recorded, and the current-light response waveform characteristics are recorded; the light source combinations of different wavelengths are continuously changed, and the above steps are repeated;

[0035] S502. Replace the light source combination in S402 with the light source combination to be tested, and repeat the steps in S402. Obtain the current light response waveform characteristics of multiple ports and compare them with the calibrated current light response waveform characteristics described in S402, and obtain the most similar one as the corresponding light source band combination.

[0036] Preferably, the light source to be measured is a plurality of visible light and near-infrared light, with a wavelength range of 405 to 1550 nm.

[0037] Preferably, the selected common ground point is the emitter, the first bias voltage is loaded between the collector and the emitter, which is 1V, the second bias voltage is loaded between the base and the emitter, which is 0.5V, and the third bias voltage is loaded between the substrate contact and the emitter, which is 0V.

[0038] Compared with the prior art, the present invention has the following beneficial effects:

[0039] (1) The present invention configures the bias potential of the three electrodes and the substrate contact. When the device is irradiated by the light source, the carriers in the two-dimensional semiconductor material are excited by the light to generate photocurrent, and different photocurrent components are obtained at the three ports. The intensity and light frequency band of the irradiation light source are reflected by the difference in the waveform and polarity of the photocurrent.

[0040] (2) The two-dimensional stacked pan-spectral sensitive light band detector of the present invention is an on-chip integrated structure, and has the characteristics of miniaturization, low power consumption, and broadband detection. BRIEF DESCRIPTION OF THE DRAWINGS

[0041] Figure 1 It is a schematic diagram of the overall structure of the two-dimensional stacked pan-spectral sensitive light band detector according to Example 1 of the present invention, wherein 1 is a substrate; 2 is an insulating layer; 3 is a first stack; 4 is a second stack; 5 is a third stack; 6 is an emitter; 7 is a base; 8 is a collector; and 9 is a substrate contact.

[0042] Figure 2 This is an optical microscopic morphology image of the two-dimensional stacked pan-spectral sensitive light band detector according to Example 1 of the present invention.

[0043] Figure 3 The collector current response waveform (I) of the two-dimensional stacked pan-spectral sensitive light band detector of Example 1 of the present invention is shown in FIG. 1 when the first bias voltage is 1V, the second bias voltage is 0.5V, and the third bias voltage is 0V, and the wavelengths of the excitation light sources are 638nm, 1064nm, and 1550nm respectively. C -Time) and base current response waveform (I B -Time).

[0044] Figure 4 In the embodiment 7 of the present invention, when the first bias voltage is 1V, the second bias voltage is 0.5V, and the third bias voltage is 0V, the excitation light sources are respectively a gas fuel flame (mainly in the near-infrared band) and an LED lighting light source (visible light band), and the irradiation conditions are respectively: dim light LED is turned on, dim light flame is turned on, and flame in LED environment is turned on. The collector current response waveforms (IC -Time), base current response waveform (I B -Time) and the corresponding waveform of emitter current (I E -Time).

[0045] Figure 5 The collector current response waveform (normalized I C -Time) and base current response waveform (normalized I B -Time). DETAILED DESCRIPTION

[0046] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0047] It should be understood that the step numbers used in this document are only for convenience of description and are not intended to limit the order in which the steps are executed.

[0048] It should be understood that the terms used in the present specification are only for the purpose of describing specific embodiments and are not intended to limit the present invention. As used in the present specification and the appended claims, unless the context clearly indicates otherwise, the singular forms "a", "an" and "the" are intended to include plural forms.

[0049] The terms “include” and “comprising” indicate the presence of described features, integers, steps, operations, elements and / or components, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, components and / or combinations thereof.

[0050] The term "and / or" means and includes any and all possible combinations of one or more of the associated listed items.

[0051] The technical solution of the present invention is further described in detail below through specific embodiments and in conjunction with the accompanying drawings:

[0052] Example 1

[0053] like Figure 1As shown, the two-dimensional stacked pan-spectral sensitive light band detector includes, from bottom to top, a substrate 1, an insulating layer 2, a first stack 3, a second stack 4, a third stack 5, an emitter 6, a base 7, a collector 8, and a substrate contact 9. The insulating layer 2 is stacked on the substrate 1, and the first stack 3, the second stack 4, and the third stack 5 are all heterostructures formed by vertically stacking two-dimensional materials in any order. The emitter 6, the base 7, and the collector 8 are arranged on the side of the insulating layer 2 away from the substrate 1, and are in contact with the third stack 5, the second stack 4, and the first stack 3, respectively, and are provided with a substrate contact 9. The bias voltage is generated by two voltage sources, and the two voltage sources can use any one of the emitter 6, the base 7, and the collector 8 as a common grounding point, and configure two bias voltages to the remaining two electrodes respectively. A third bias voltage is configured between the substrate contact 9 and any one of the emitter 6, the base 7, and the collector 8 to generate a vertical electric field from the substrate 1 to the first stack 3, the second stack 4, and the third stack 5.

[0054] The built-in electric field formed by the three layers of different two-dimensional materials stacked vertically in this embodiment can enhance the photoresponsivity of the photodetector. The potential barrier or potential well formed when the energy bands of different materials are aligned can introduce a variety of photoelectric response mechanisms to expand the response bandwidth and form different response waveforms for light sources in different photoelectric mechanism bands to achieve resolution of light bands.

[0055] In this embodiment, the first bias voltage is loaded between the collector 8 and the emitter 6 and is 1V, the second bias voltage is loaded between the base 7 and the emitter 6 and is 0.5V, and the third bias voltage is loaded between the substrate contact 9 and the emitter 6 and is 0V.

[0056] In this embodiment, the first stack 3, the second stack 4, and the third stack 5 are formed by stacking three layers of two-dimensional materials in sequence, and the area of ​​the upper surface is 50 μm 2 , can be made of molybdenum disulfide / tungsten diselenide / molybdenum disulfide stacking, the thickness from top to bottom is: 7.15nm / 4.73nm / 4.88nm. Of course, this is only a reference implementation method and cannot be understood as a limitation of this solution. In the specific implementation process, the number of layers, thickness and area of ​​each layer of the first stack 3, the second stack 4, and the third stack 5 can be increased or decreased according to actual conditions, and the combination of its materials can also be selected from other types of two-dimensional materials combined with each other.

[0057] In this embodiment, the substrate 1 has a doping concentration of 10 19 / cm 3It is made of p-type silicon. Of course, this is only a preferred implementation. In the specific implementation process, other types of silicon or metals, and insulating substrates with conductive films coated on the surface can be used to realize the conductive and supporting functions of the substrate. In this way, a bias voltage can be directly applied to the substrate 1 to generate an electric field directed from the substrate 1 to the first stack 3, the second stack 4, and the third stack 5.

[0058] In a specific embodiment, the insulating layer 2 is made of silicon dioxide and has a thickness of 300 nm. The insulating layer 2 is provided to prevent the substrate from short-circuiting with the first stack 3 , the second stack 4 , and the third stack 5 .

[0059] In a specific embodiment, the materials of the emitter 6 , the base 7 , and the collector 8 are all Ti / Au stacked layers.

[0060] The two-dimensional stacked pan-spectral sensitive light band detector in this embodiment is suitable for light sources from the visible to near-infrared bands.

[0061] like Figure 3 1 is the photoelectric response waveform of the two-dimensional stacked pan-spectral sensitive light band detector in this embodiment to three different light sources. The two-dimensional stacked pan-spectral sensitive light band detector in this embodiment produces significant photoelectric response differences to light sources of 638nm, 1064nm and 1550nm. C , 638nm and 1550nm light sources will cause a positive response in the current (i.e., the current increases after illumination), while 1064nm light sources will cause a negative response in the current (i.e., the current decreases after illumination). C The current waveform has an overshoot (i.e., after the light is illuminated, the photocurrent reaches an extreme value and then slowly recovers to a certain amount of dark current, and then stabilizes at a certain current value). C The current waveform has no overshoot. B , only the 638nm light source will cause a large response, while there is basically no response to the 1064nm and 1550nm light sources (or the response current is less than the current noise).

[0062] The working principle of this embodiment is:

[0063] Due to the difference in the energy of photons of light sources with different wavelengths, different photoelectric response mechanisms will be caused. Photons with a wavelength of 638nm will cause the valence band electrons in the first stack 3, the second stack 4, and the third stack 5 to transition to the conduction band, photons with a wavelength of 1064nm will cause the valence band electrons in the middle layer second stack 4 to transition to the conduction band of the top layer first stack 3, and photons with a wavelength of 1550nm will cause the conduction band electrons in the top layer first stack 3 to transition to the conduction band of the middle layer second stack 4. Due to the differences in the photoelectric response mechanisms of the three bands, the current waveforms of the collector 8 and base 7 ports will be different, resulting in a response with obvious differentiation to light sources of different bands, and the static power consumption is about 6.5nW.

[0064] This embodiment discloses a method for preparing a two-dimensional stacked pan-spectral sensitive light band detector, comprising the following steps:

[0065] S1. A silicon dioxide layer 2 having a thickness of about 300 nm is deposited on a silicon substrate 1 by plasma enhanced chemical vapor deposition as an insulating layer;

[0066] S2. The first laminate 3, the second laminate 4, and the third laminate 5 are transferred to the surface of the insulating layer by a transfer method;

[0067] S3. The sample is placed in a nitrogen atmosphere for thermal annealing;

[0068] S4. Spin-coating a photoresist (PMMA) on the insulating layer and the first stack 3, the second stack 4, and the third stack 5 using a coating machine; exposing the photoresist using an electron beam exposure system, and then developing in a developer to obtain an emitter 6, a base 7, and a collector 8 pattern;

[0069] S5. Use an electron beam evaporation coating system to evaporate 5nm of Ti and 45nm of Au on the surface of the sample after S4, and then place the sample in an acetone solution to remove the photoresist and the metal above the unexposed area to obtain a sample with an emitter 6, a base 7, and a collector 8.

[0070] This embodiment also discloses a light band detection method, comprising the following steps:

[0071] S101. placing the two-dimensional stacked pan-spectral sensitive light band detector in a dark environment;

[0072] S201. Select any one of the emitter 6, base 7, and collector 8 on the first stack 3, the second stack 4, and the third stack 5 as a grounding point, apply the first and second bias voltages to the other two electrodes, so that a loop current is formed inside the first stack 3, the second stack 4, and the third stack 5; and apply a third bias voltage between the substrate 1 and any one of the emitter 6, base 7, and collector 8;

[0073] S301. Start recording the current-time relationship of multiple electrode ports;

[0074] S401. After a period of time, a light source of known wavelength is irradiated onto the device surface. After a period of irradiation, the device is returned to a dark environment and the current-time waveform during the optical switching process is recorded (see Figure 3 ), and record the current light response waveform characteristics; constantly change the light source with different wavelengths and repeat the above steps;

[0075] S501. Replace the light source in S401 with the light source to be tested, and repeat the steps in S401. Obtain the current light response waveform characteristics of multiple ports and compare them with the calibrated current light response waveform characteristics described in S401, and obtain the most similar one as the wavelength band of the corresponding light source.

[0076] In this embodiment, the first bias voltage is loaded between the collector 8 and the emitter 6, which is 1V, the second bias voltage is loaded between the base 7 and the emitter 6, which is 0.5V, and the third bias voltage is loaded between the substrate contact 9 and the emitter 6, which is 0V. Of course, the selection of these values ​​is only for reference implementation and cannot be understood as a limitation of this solution. In the specific implementation process, the voltage values ​​can be changed according to actual conditions.

[0077] The wavelengths of the light sources in this embodiment are 638nm, 1064nm and 1550nm. Of course, the selection of these values ​​is only for reference and cannot be understood as a limitation of this solution. In the specific implementation process, the wavelength of the light source can be changed according to the actual situation.

[0078] Example 2

[0079] The difference from the first embodiment is that in this embodiment, the material of the first stacked layer 3 is replaced by transition metal nitride.

[0080] Example 3

[0081] The difference from the first embodiment is that in this embodiment, the material of the insulating layer 2 is replaced by silicon nitride.

[0082] Example 4

[0083] The difference from the first embodiment is that in this embodiment, the material of the substrate 1 is replaced by metal.

[0084] Example 5

[0085] The difference from Example 1 is that in this embodiment, the voltage between the substrate contact 9 and the emitter 6 is changed to any voltage value other than 0. In this embodiment, the vertical electric field can affect the band bending and carrier concentration distribution of the two-dimensional material, thereby adjusting the light response characteristics of the device.

[0086] Example 6

[0087] The difference from Example 1 is that the wavelength of the calibration light source used in this embodiment is any wavelength from 405 nm to 1550 nm.

[0088] Example 7

[0089] The difference from Example 1 is that the optical band detection method includes the following steps:

[0090] S102. placing the two-dimensional stacked pan-spectral sensitive light band detector in a dark environment;

[0091] S202. any one of the emitter 6, base 7, collector 8 on the first stack 3, the second stack 4, and the third stack 5 is selected as a grounding point, and the first and second bias voltages are applied to the other two electrodes to form a loop current inside the first stack 3, the second stack 4, and the third stack 5; at the same time, a third bias voltage is applied between the substrate contact 9 and any one of the emitter 6, base 7, and collector 8;

[0092] S302. Start recording the current-time relationship of multiple electrode ports;

[0093] S402. After a period of time, multiple light source combinations of known wavelengths are sequentially irradiated onto the device surface, and the device is returned to a dark environment again, and the current-time waveform during the optical switching process is recorded, and the current-light response waveform characteristics are recorded; the light source combinations of different wavelengths are continuously changed, and the above steps are repeated;

[0094] S502. Replace the light source combination in S402 with the light source combination to be tested, and repeat the steps in S402. Obtain the current light response waveform characteristics of multiple ports and compare them with the calibrated current light response waveform characteristics described in S402, and obtain the most similar one as the corresponding light source band combination.

[0095] In this embodiment, the first bias voltage is loaded between the collector 8 and the emitter 6, which is 1V, the second bias voltage is loaded between the base 7 and the emitter 6, which is 0.5V, and the third bias voltage is loaded between the substrate contact 9 and the emitter 6, which is 0V. Of course, the selection of these values ​​is only for reference implementation and cannot be understood as a limitation of this solution. In the specific implementation process, the voltage values ​​can be changed according to actual conditions.

[0096] The light source combination in this embodiment is a gas fuel flame (mainly near-infrared band) and an LED lighting source (visible light band), and the irradiation conditions are: dim light LED on, dim light flame on, and flame on in LED environment. Of course, the selection of these light source types and combinations is only for reference and cannot be understood as a limitation of this solution. During the specific implementation process, the light source type and combination can be changed according to actual conditions.

[0097] from Figure 4 It can be seen that the dim LED turns on as I C Positive response, I B Negative response, I E Negative response; dim flame turns on and is represented as I C Negative response, I B No response, I E Positive response; the flame in the LED environment is turned on as I C Positive response, I B No response, I E Negative response. The results show that the two-dimensional stacked pan-spectral sensitive light band detector of the present invention has the ability to distinguish two bands at the same time.

[0098] Example 8

[0099] The difference from Example 1 is that the two-dimensional stacked pan-spectral sensitive light band detector of this embodiment uses another photovoltaic power source as a bias voltage source, and when the first bias voltage is 0.5V, the second bias voltage is 0V, and the third bias voltage is 0V, the excitation light sources are respectively a gas fuel flame (mainly in the near-infrared band) and an LED lighting source (visible light band).

[0100] from Figure 5 It can be seen that under the condition of external photovoltaic power supply, the dim light LED is turned on as I C Positive response, I B Negative response, I E Negative response; dim flame turns on and is represented as I C Negative response, I B No response, I E Positive response; the results show that the two-dimensional stacked pan-spectral sensitive light band detector of the present invention has the ability to distinguish two bands at the same time, and is suitable for a variety of external bias conditions and self-powered systems.

[0101] Finally, it should be noted that the above embodiments are only used to illustrate the technical solution of the present invention rather than to limit the scope of protection of the present invention. Although the present invention has been described in detail with reference to the preferred embodiments, those skilled in the art should understand that the technical solution of the present invention can be modified or replaced by equivalents without departing from the essence and scope of the technical solution of the present invention.

Claims

1. A two-dimensional stacked pan-spectral sensitive light band detector, characterized in that: From bottom to top, it includes substrate contact, substrate, insulating layer, first stack, second stack, third stack, emitter, base, and collector. The insulating layer is stacked on the substrate. The emitter, base, and collector are arranged on the side of the insulating layer away from the substrate, and the emitter, base, and collector are in contact with the third stack, the second stack, and the first stack respectively. The emitter, base, and collector are configured with bias voltages, and the bias voltage is generated by two voltage sources. The two voltage sources use any one of the emitter, base, and collector as a common grounding point, and configure two bias voltages to the remaining two electrodes respectively; a third bias voltage is configured between the substrate contact and any one of the emitter, base, and collector to generate a vertical electric field directed from the substrate to the first stack, the second stack, and the third stack.

2. The two-dimensional stacked pan-spectral sensitive light band detector according to claim 1, characterized in that: The materials of the first stack, the second stack and the third stack include at least one of transition metal chalcogenides, transition metal carbon / nitrides, graphene, graphene oxide and black phosphorus.

3. The two-dimensional stacked pan-spectral sensitive light band detector according to claim 1, characterized in that: The thickness of the first stack, the second stack and the third stack are all 2-10 nm, and the area of ​​the stack regions are all 50-2000 μm 2 .

4. The two-dimensional stacked pan-spectral sensitive light band detector according to claim 1, characterized in that: The substrate is metal, silicon or an insulating substrate with a conductive film coated on the surface.

5. The two-dimensional stacked pan-spectral sensitive light band detector according to claim 1, characterized in that: The thickness of the insulating layer is 300-700 nm.

6. The two-dimensional stacked pan-spectral sensitive light band detector according to claim 1, characterized in that: The material of the insulating layer includes at least one of silicon dioxide, aluminum oxide, hafnium oxide, silicon nitride, titanium oxide, and zirconium oxide.

7. The method for preparing the two-dimensional stacked pan-spectral sensitive light band detector according to any one of claims 1 to 6, characterized in that: The following steps are involved: S1. Preparing an insulating layer on a substrate; S2. The first stack, the second stack, and the third stack are transferred to the surface of the insulating layer by a transfer, growth, or deposition method; S3. The sample is placed in a nitrogen atmosphere for thermal annealing; S4. Spin-coat the photoresist on the surface of the insulating layer and the first stack, the second stack, and the third stack using a coating machine; expose the photoresist using a photolithography system, and then develop in a developer to obtain an emitter, base, and collector pattern; S5. Plate a layer of metal on the surface of the sample after S4, then place the sample in an acetone solution to remove the photoresist in the unexposed area and the metal above it, to obtain a sample with an emitter, a base, and a collector.

8. The technology of using the two-dimensional stacked pan-spectral sensitive optical band detector in optical band detection as claimed in any one of claims 1 to 6, characterized in that: The optical band detection method comprises the following steps: S101. placing the two-dimensional stacked pan-spectral sensitive light band detector in a dark environment; S201. Select any one of the emitter, base, and collector electrodes on the first stack, the second stack, and the third stack as a grounding point, apply first and second bias voltages to the other two electrodes, so that a loop current is formed inside the first stack, the second stack, and the third stack; and apply a third bias voltage between the substrate contact and any one of the emitter, base, and collector electrodes; S301. Start recording the current-time relationship of multiple electrode ports; S401. After a period of time, a light source of known wavelength is irradiated onto the surface of the device. After a period of time t, the device is returned to a dark environment again, and the current-time waveform during the optical switching process is recorded, and the current-light response waveform characteristics are recorded; light sources of different wavelengths are continuously replaced, and the above steps are repeated; S501. Replace the light source in S401 with the light source to be tested, and repeat the steps in S401; obtain the current-light response waveform characteristics of multiple ports, and compare them with the calibrated current-light response waveform characteristics described in S401, and obtain the most similar one as the band of the corresponding light source.

9. The technology of using the two-dimensional stacked pan-spectral sensitive optical band detector in optical band detection as claimed in claim 8, characterized in that: The wavelength of the light source to be measured is from visible light to near infrared, and the wavelength range is 405-1550nm.

10. The technology of using the two-dimensional stacked pan-spectral sensitive optical band detector in optical band detection as claimed in claim 8, characterized in that: The selected common ground point is the emitter, the first bias voltage is loaded between the collector and the emitter, which is 1V, the second bias voltage is loaded between the base and the emitter, which is 0.5V, and the third bias voltage is loaded between the substrate contact and the emitter, which is 0V.

Images