Manufacturing method of infrared scene generating device

Abstract

The invention discloses a manufacturing method of an infrared scene generation device, and the method comprises the steps: preparing a chip substrate which is provided with a light-in surface and a light-out surface which are opposite in a first direction, and the light-in surface of the chip substrate is provided with a sensitive unit; a sealing cover is arranged on the light inlet face of the chip substrate, the sealing cover is provided with a visible light inlet, and the visible light inlet and the sensing unit correspond to each other in the first direction and are arranged at intervals; an inner cavity formed by the sealing cover and the chip substrate is vacuumized through a vacuum system, and the sealing cover and the chip substrate are connected and fixed through heating. Therefore, the vacuum packaged infrared scene generation device can be formed, the durability and reliability of the sensing unit can be improved, and the overall size of the infrared scene generation device can be reduced.

Description

Technical Field

[0001] The invention relates to the field of semiconductor technology, and in particular to a method for manufacturing an infrared scene generating device. Background Art

[0002] The infrared scene generation system can provide a real-time infrared image source for the equipment to be tested in the infrared semi-physical simulation test. The infrared scene generation device is the core device in the infrared scene generation system. According to the working mode, it can be divided into direct radiation type and radiation modulation type. The infrared scene generation chip is one of the typical infrared scene generation devices. It generates spontaneous radiation through light driving.

[0003] In the related art, in order to reduce convective heat transfer, some infrared scene generation devices need to work in a high vacuum environment. In order to maintain a vacuum working environment, these devices or chips are usually fixed in a vacuum chamber, and vacuum equipment is used to connect the vacuum chamber to maintain the vacuum degree. However, the vacuum system composed of the vacuum chamber and the vacuum unit will not only make the entire test system bulky and less flexible, but also the components of the vacuum system are complex, heavy, and difficult to move or move as a whole, so the portability of the test system is poor. In addition, when the chip is working, the vacuum equipment needs to be kept powered on at all times, and the working power of the vacuum unit is large, so it consumes more electricity. Summary of the invention

[0004] The present invention aims to solve at least one of the technical problems existing in the prior art. To this end, one purpose of the present invention is to provide a method for manufacturing an infrared scene generation device, which can not only improve the durability and reliability of the sensitive unit, but also reduce the overall volume of the infrared scene generation device and improve portability.

[0005] A method for manufacturing an infrared scene generating device according to the present invention comprises: preparing a chip substrate, wherein the chip substrate has a light-inlet surface and a light-outlet surface opposite to each other in a first direction, and a sensitive unit is arranged on the light-inlet surface of the chip substrate; arranging a cover on the light-inlet surface of the chip substrate, wherein the cover has a visible light inlet, and the visible light inlet corresponds to the sensitive unit in the first direction and is arranged at intervals from each other; evacuating an inner cavity formed by the cover and the chip substrate to a vacuum through a vacuum system, and heating so that the cover and the chip substrate are connected and fixed.

[0006] Therefore, the inner cavity formed by the cover and the chip substrate is evacuated to a vacuum through the vacuum system, and the cover and the chip substrate are heated so as to be connected and fixed to form a vacuum-packaged infrared scene generating device, which can not only improve the durability and reliability of the sensitive unit, but also reduce the overall volume of the infrared scene generating device.

[0007] In some examples of the present invention, the step of heating so that the cover and the chip substrate are connected and fixed further includes: providing a solder piece between the chip substrate and the cover; and heating so that the solder piece connects and fixes the chip substrate and the cover.

[0008] In some examples of the present invention, the solder member is at least one of an alloy solder sheet and a bonding agent.

[0009] In some examples of the present invention, before the step of providing a cover on the light-incoming surface of the chip substrate, the step further includes: providing an air getter on the light-incoming surface of the chip substrate.

[0010] In some examples of the present invention, the air getter is located between the sensitive unit and the solder member and is extended in a circumferential direction of the chip substrate.

[0011] In some examples of the present invention, the step of disposing a solder part between the chip substrate and the cover further includes: disposing a support part between the chip substrate and the cover, wherein the solder part includes a first solder part and a second solder part, the first solder part is disposed between the support part and the cover, and the second solder part is disposed between the support part and the chip substrate.

[0012] In some examples of the present invention, the suction member is circumferentially extended on the outer side of the sensitive unit, the suction member corresponds to the second solder member and is located in the inner circle of the second solder member; and / or the suction member corresponds to the first solder member and is located in the inner circle of the first solder member; and / or the suction member corresponds to the support member and is located in the inner circle of the support member.

[0013] In some examples of the present invention, the sensitive unit and the projection of the air suction member in the first direction are arranged to be spaced apart from each other.

[0014] In some examples of the present invention, the sensitive unit is a light-to-heat conversion unit.

[0015] In some examples of the present invention, the chip substrate is a silicon carbide substrate, and the transmittance of the chip substrate to the infrared band is a, and the value range of a is: a>70%.

[0016] In some examples of the present invention, before the step of setting a cover on the light-incoming surface of the chip substrate, the step further includes: etching a groove in the cover that is recessed in a first direction toward a side away from the chip substrate, wherein the visible light inlet corresponds to the groove.

[0017] In some examples of the present invention, the cover includes a protective frame portion and a light inlet portion, the visible light inlet is located in the light inlet portion, the protective frame portion is arranged at the circumferential edge of the light inlet portion, and the step of etching the cover into a groove that is recessed in a first direction toward a side away from the chip substrate includes: etching the light inlet portion into a groove that is recessed in a first direction toward a side away from the chip substrate.

[0018] In some examples of the present invention, at least one of the visible light inlet and the light emitting surface of the chip substrate is provided with an anti-reflection film.

[0019] Additional aspects and advantages of the present invention will be given in part in the following description and in part will be obvious from the following description, or will be learned through practice of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] The above and / or additional aspects and advantages of the present invention will become apparent and easily understood from the description of the embodiments in conjunction with the following drawings, in which: Figure 1 is a schematic diagram of an infrared scene generating device according to an embodiment of the present invention; Figure 2 is a schematic diagram of an infrared scene generating device according to an embodiment of the present invention; Figure 3 is a schematic diagram of an infrared scene generating device according to an embodiment of the present invention; Figure 4 is a schematic diagram of an infrared scene generating device according to an embodiment of the present invention; Figure 5 is a schematic diagram of an infrared scene generating device according to an embodiment of the present invention; Figure 6 is a flow chart of a method for manufacturing an infrared scene generating device according to an embodiment of the present invention; Figure 7 is a flow chart of a method for manufacturing an infrared scene generating device according to an embodiment of the present invention.

[0021] Reference numerals: 100. Infrared scene generating device; 10. Chip substrate; 101. Light-incoming surface; 102. Light-outgoing surface; 103. Sensitive unit; 20, cover; 201, visible light inlet; 202, groove; 203, protection frame; 204, light inlet; 30. solder part; 301. first solder part; 302. second solder part; 40. Air suction parts; 50. Support members. DETAILED DESCRIPTION

[0022] Embodiments of the present invention are described in detail below. The embodiments described with reference to the accompanying drawings are exemplary. Embodiments of the present invention are described in detail below.

[0023] Reference below Figure 1-Figure 7 A method for manufacturing the infrared scene generating device 100 according to an embodiment of the present invention is described.

[0024] Combination Figure 1-Figure 7 As shown, the manufacturing method of the infrared scene generating device 100 according to the present invention may mainly include: Prepare a chip substrate 10, wherein the chip substrate 10 has a light-incoming surface 101 and a light-outgoing surface 102 that are opposite to each other in a first direction, and a sensitive unit 103 is disposed on the light-incoming surface 101 of the chip substrate 10; A cover 20 is disposed on the light-incoming surface 101 of the chip substrate 10, wherein the cover 20 has a visible light inlet 201, and the visible light inlet 201 corresponds to the sensitive unit 103 in the first direction and is spaced apart from each other; The inner cavity formed by the cover 20 and the chip substrate 10 is evacuated to a vacuum through a vacuum system, and heated to connect and fix the cover 20 and the chip substrate 10.

[0025] Specifically, the infrared scene generating device 100 may mainly include: a chip substrate 10 and a cover 20. The chip substrate 10 has a light-incoming surface 101 and a light-outgoing surface 102 that are opposite to each other in a first direction, and a sensitive unit 103 is arranged on the light-incoming surface 101 of the chip substrate 10. The sensitive unit 103 is prepared on the light-incoming surface 101 of the chip substrate 10 by a semiconductor process, and the chip substrate 10 provides stable support for the sensitive unit 103. The cover 20 is arranged on one side of the light-incoming surface 101 of the chip substrate 10, and the cover 20 has a visible light inlet 201. The visible light inlet 201 corresponds to the sensitive unit 103 in the first direction and is arranged at intervals from each other. The visible light inlet 201 can ensure the transmittance of visible light, so that the sensitive unit 103 installed on the chip substrate 10 can receive the optical signal. Visible light enters the infrared scene generating device 100 from the visible light inlet 201 of the cover 20 , and the sensitive unit 103 receives the light signal and converts it into infrared radiation, which then radiates from the light emitting surface 102 of the chip substrate 10 , thereby forming an infrared image.

[0026] Furthermore, the visible light inlet 201 and the sensitive unit 103 are spaced apart from each other in the first direction, which not only helps to form a vacuum environment of a certain volume, but also provides installation space for the arrangement of other structures.

[0027] Furthermore, the inner cavity formed by the cover 20 and the chip substrate 10 is evacuated to a vacuum through the vacuum system, and the cover 20 and the chip substrate 10 are connected and fixed by heating. Specifically, the inner cavity formed by the cover 20 and the chip substrate 10 is evacuated to a vacuum through the vacuum system, and the chip substrate 10 and the visible light inlet 201 are aligned and bonded under a vacuum environment using a vacuum bonding machine, and the cover 20 and the chip substrate 10 are connected and fixed by heating. After the heating is completed, the infrared scene generation device 100 is controlled to slowly cool to room temperature under a vacuum environment, and finally dry nitrogen is filled to make the inner cavity formed by the cover 20 and the chip substrate 10 reach atmospheric pressure, and then the packaged infrared scene generation device 100 is taken out.

[0028] Furthermore, compared with the vacuum packaging technology of infrared detectors, the manufacturing method of the infrared scene generating device 100 proposed in the present invention does not require an additional infrared optical window, has fewer preparation processes, and is highly controllable.

[0029] Furthermore, compared with the infrared scene generating device 100 without vacuum packaging, the infrared scene generating device 100 with vacuum packaging can not only prevent the sensitive unit 103 from being subjected to physical impact and dust pollution, and reduce the damage and destruction of the sensitive unit 103 caused by external environmental factors, but also provide physical support and vacuum environment for the sensitive unit 103, thereby ensuring that the sensitive unit 103 works under conditions of relatively stable vacuum degree and stress, thereby improving the reliability of the sensitive unit 103 under different test environments. Moreover, the vacuum-packaged sensitive unit 103 does not need to use a bulky vacuum system to maintain the working environment, which can significantly reduce the volume, weight and complexity of the entire infrared scene generating device 100, making the entire infrared scene generating device 100 more flexible and convenient.

[0030] Therefore, the inner cavity formed by the cover 20 and the chip substrate 10 is evacuated to a vacuum through the vacuum system, and the cover 20 and the chip substrate 10 are heated to connect and fix them. This can not only improve the durability and reliability of the sensitive unit 103, but also reduce the overall volume of the infrared scene generating device 100.

[0031] In some embodiments of the present invention, in order to facilitate alignment, the shape design and length and width dimensions of the cover 20 are preferably consistent with the shape design and length and width dimensions of the chip substrate 10 .

[0032] Combination Figure 1-Figure 5As shown, the step of heating so that the cover 20 and the chip substrate 10 are connected and fixed also includes: arranging a solder member 30 between the chip substrate 10 and the cover 20; heating so that the solder member 30 connects and fixes the chip substrate 10 and the cover 20. Specifically, the solder member 30 corresponds to at least part of the periphery of the chip substrate 10 and the cover 20, and the outer diameter of the solder member 30 is less than or equal to the diameter of the chip substrate 10. Further, the solder member 30 is correctly placed between the chip substrate 10 and the cover 20. After heating and melting, the solder member 30 can fill the gap between the chip substrate 10 and the cover 20, and the solder member 30 can form a mechanical connection after cooling and solidification, so that the chip substrate 10 and the cover 20 are firmly combined together, which can not only ensure the maintenance of the vacuum degree in the infrared scene generation device 100, but also improve the stability and reliability of the structure of the infrared scene generation device 100, and can avoid the chip substrate 10 and the cover 20 from loosening or separation.

[0033] In some embodiments of the present invention, the solder member 30 may be a circular ring or square frame structure, and the structural shape of the solder member 30 is preferably consistent with the structural shapes of the chip substrate 10 and the cover 20 .

[0034] Combination Figure 1-Figure 5 As shown, the solder member 30 is at least one of an alloy solder sheet and a bonding agent. Specifically, when the alloy solder sheet is used to connect and fix the chip substrate 10 and the cover 20, it needs to be heated to melt it so as to fill the gap between the chip substrate 10 and the cover 20, and the alloy solder sheet has the characteristic of a low melting point; when the bonding agent is used to connect and fix the chip substrate 10 and the cover 20, sufficient time can be given to allow it to complete solidification, and some bonding agents can also be heated to accelerate the solidification speed. By making the solder member 30 at least one of an alloy solder sheet and a bonding agent, not only can the connection and fixation between the chip substrate 10 and the cover 20 be completed at a lower temperature, the working performance and structural performance of the infrared scene generation device 100 can be avoided from being affected by excessive temperature, and the stability and reliability of the structure of the infrared scene generation device 100 can also be improved.

[0035] Combination Figure 1-Figure 5 As shown, before the step of setting the cover 20 on the light-incoming surface 101 of the chip substrate 10, it also includes: setting an air getter 40 on the light-incoming surface 101 of the chip substrate 10. Specifically, the air getter 40 can adsorb gas molecules, and by setting the air getter 40 on the light-incoming surface 101 of the chip substrate 10, it can help maintain the vacuum degree of the infrared scene generating device 100, improve the working performance of the infrared scene generating device 100, and extend the service life of the infrared scene generating device 100.

[0036] In some embodiments of the present invention, the getter 40 and the deposition area of ​​the getter 40 are preferably an annular structure or a square frame structure, and the structural shape of the getter 40 is preferably consistent with the structural shape of the chip substrate 10 and the cover 20 .

[0037] In some embodiments of the present invention, the getter element 40 may be a sheet-like getter or a getter film, preferably a getter film, the material of which is an alloy film mainly composed of zirconium.

[0038] Combination Figure 1-Figure 5 As shown, the air getter 40 is located between the sensitive unit 103 and the solder member 30 and is extended in the circumferential direction of the chip substrate 10. Specifically, by locating the air getter 40 between the sensitive unit 103 and the solder member 30 and extending the air getter 40 in the circumferential direction of the chip substrate 10, the air getter 40 can be located outside the working area of ​​the sensitive unit 103, thereby preventing the structural setting of the air getter 40 from affecting the working optical path of the sensitive unit 103 to ensure good working performance of the sensitive unit 103, and providing stable support for the air getter 40, thereby ensuring the rationality and reliability of the structural setting of the infrared scene generation device 100.

[0039] Furthermore, the setting of the getter 40 needs to be patterned and film-formed by photolithography and etching processes, and the patterned position of the getter 40 is outside the working area of ​​the sensitive unit 103, and does not affect the working optical path of the sensitive unit 103. Specifically, the deposition area of ​​the getter 40 is prepared by photolithography, and then the getter 40 is deposited in the area not covered by the photoresist by the coating process. It should be noted that the getter 40 in the present invention is activated by heating when the chip substrate 10 and the cover 20 are vacuum packaged.

[0040] Combination Figure 1-Figure 7 As shown, the step of arranging a solder member 30 between the chip substrate 10 and the cover 20 also includes: arranging a support member 50 between the chip substrate 10 and the cover 20, wherein the solder member 30 includes a first solder member 301 and a second solder member 302, the first solder member 301 is arranged between the support member 50 and the cover 20, and the second solder member 302 is arranged between the support member 50 and the chip substrate 10.

[0041] Specifically, by setting a support member 50 between the chip substrate 10 and the cover 20, not only can support in the first direction be provided between the top cover and the substrate to prevent the cover 20 from collapsing, but also the displacement of the cover 20 relative to the chip substrate 10 can be limited, which can help to maintain the overall shape of the infrared scene generating device 100 structure unchanged, help to improve the stability and reliability of the infrared scene generating device 100 structure, and extend the service life of the infrared scene generating device 100. In addition, the volume of the vacuum environment in the infrared scene generating device 100 can be increased, which can ensure that the infrared scene generating device 100 has a certain vacuum degree and improve the working performance of the infrared scene generating device 100.

[0042] Furthermore, the solder part 30 includes a first solder part 301 and a second solder part 302. The first solder part 301 is arranged between the support part 50 and the cover 20 to connect and fix the support part 50 and the cover 20. The second solder part 302 is arranged between the support part 50 and the chip substrate 10 to connect and fix the support part 50 and the chip substrate 10. This not only can achieve the connection and fixation between the cover 20, the support part 50 and the chip substrate 10, so that the infrared scene generating device 100 has a certain sealing and vacuum degree, but also can ensure the stability and reliability of the structural setting of the infrared scene generating device 100.

[0043] In some embodiments of the present invention, the material of the support member 50 includes metal, silicon, silicon oxide and silicon carbide, and the outer diameter shape of the support member 50 is consistent with the structural shape of the chip substrate 10, and the outer diameter of the support member 50 is less than or equal to the diameter of the chip substrate 10.

[0044] Combination Figure 1-Figure 5 As shown, the suction member 40 is circumferentially extended on the outer side of the sensitive unit 103, and the suction member 40 corresponds to the second solder member 302 and is located in the inner circle of the second solder member 302; and / or the suction member 40 corresponds to the first solder member 301 and is located in the inner circle of the first solder member 301; and / or the suction member 40 corresponds to the support member 50 and is located in the inner circle of the support member 50.

[0045] Specifically, the suction component 40 in the present invention can function as long as it is in the vacuum environment of the infrared scene generating device 100. Due to the working characteristics of the sensitive unit 103, the suction component 40 needs to be outside the working light path of the sensitive unit 103. Therefore, the suction component 40 is circumferentially extended on the outer side of the sensitive unit 103. In this way, the normal operation of the sensitive unit 103 is not affected by the setting of the suction component 40, thereby ensuring the good working performance of the sensitive unit 103.

[0046] Further, the suction member 40 corresponds to the second solder member 302 and is located in the inner circle of the second solder member 302; and / or the suction member 40 corresponds to the first solder member 301 and is located in the inner circle of the first solder member 301; and / or the suction member 40 corresponds to the support member 50 and is located in the inner circle of the support member 50, so that the number of the suction members 40 is at least one, and the suction member 40 can be prepared by semiconductor process at one or more positions at the bottom of the cover 20, the top of the chip substrate 10 or the inner side of the support member 50, so that stable support can be provided for the suction member 40, ensuring the normal operation of the suction member 40, which can help maintain the vacuum degree of the infrared scene generating device 100 and extend the service life of the infrared scene generating device 100.

[0047] Furthermore, when the air suction members 40 are arranged at multiple positions, this can not only improve the adsorption capacity of the air suction members 40 for gas molecules and the total adsorption capacity, but also reduce the saturation speed of each air suction member 40, extend the effective use time of the air suction member 40, and in the case of failure of a certain air suction member 40, the other air suction members 40 can still continue to work, which can improve the stability and reliability of the infrared scene generation device 100. In addition, different air suction members 40 have different adsorption effects on specific types of gas molecules. Arranging the air suction members 40 at multiple positions can improve the overall adsorption effect and adsorption efficiency of the air suction members 40, which helps to improve the working performance of the infrared scene generation device 100.

[0048] In some embodiments of the present invention, the number and installation positions of the air suction members 40 may be selected according to specific application scenarios and technical requirements.

[0049] Combination Figure 1-Figure 5 As shown, the projections of the sensitive unit 103 and the air suction member 40 in the first direction are arranged at intervals from each other. Specifically, by arranging the projections of the sensitive unit 103 and the air suction member 40 in the first direction at intervals from each other, it is possible to avoid interference between the sensitive unit 103 and the air suction member 40 during operation, which not only allows the air suction member 40 to be located outside the working area of ​​the sensitive unit 103, preventing the setting of the air suction member 40 from affecting the working optical path of the sensitive unit 103, thereby ensuring good working performance of the sensitive unit 103, but also prevents the heating of the sensitive unit 103 from affecting the adsorption effect of the air suction member 40 on gas molecules, thereby ensuring normal working performance of the air suction member 40.

[0050] Combination Figure 1-Figure 5 As shown, the sensitive unit 103 is a light-to-heat conversion unit. Specifically, by making the sensitive unit 103 a light-to-heat conversion unit, the light signal entering from the visible light inlet 201 and transmitted to the sensitive unit 103 can be converted into heat energy, so that objects of different temperatures can be simulated, and then different infrared radiations are generated to form the desired infrared scene, so that the normal working performance of the infrared scene generation device 100 can be guaranteed.

[0051] Combination Figure 1-Figure 5 As shown, the chip substrate 10 is a silicon carbide substrate, and the transmittance of the chip substrate 10 to the infrared band is a, and the value range of a is: a>70%. Specifically, the silicon carbide material has a high transmittance to the infrared band. By making the chip substrate 10 a silicon carbide substrate, the transmittance of the chip substrate 10 to the infrared band can reach 70%, which can improve the imaging quality and sensitivity of the infrared scene generation device 100.

[0052] In some embodiments of the present invention, the material of the chip substrate 10 may include silicon, germanium, zinc sulfide, barium fluoride, quartz, or silicon carbide.

[0053] Combination Figure 4-Figure 5 As shown, before the step of setting the cover 20 on the light-incoming surface 101 of the chip substrate 10 , the step further includes: etching a groove 202 recessed in the cover 20 in a first direction toward a side away from the chip substrate 10 , wherein the visible light inlet 201 corresponds to the groove 202 .

[0054] Specifically, after the cover 20 is set on the light-entering surface 101 of the chip substrate 10, it will cause the cover 20 to be difficult to etch. Therefore, the etching of the cover 20 needs to be completed before the step of setting the cover 20 on the light-entering surface 101 of the chip substrate 10, wherein the etched surface of the cover 20 is opposite to the light-entering surface 101 of the chip substrate 10, and a groove 202 is etched in the cover 20 that is recessed in a first direction toward a side away from the chip substrate 10. This can not only improve the transmittance of the recessed portion of the cover 20, thereby improving the utilization rate of light energy and the working performance of the infrared scene generating device 100, but also improve the supporting force of the infrared scene generating device 100 as a whole in the first direction through the non-recessed area of ​​the cover 20, thereby improving the stability and reliability of the infrared scene generating device 100, and the cover 20 with the groove 202 is easier to align, which helps to improve the accuracy of the structural setting of the cover 20 and the installation efficiency.

[0055] In some embodiments of the present invention, the etching depth of the cover 20 can be set to be more than five times the height of the sensitive unit 103, and the etching depth of the cover 20 can be adjusted according to specific design requirements.

[0056] Combination Figure 4-Figure 7 As shown, the cover 20 includes a protective frame portion 203 and a light inlet portion 204, the visible light inlet 201 is located in the light inlet portion 204, and the protective frame portion 203 is arranged at the circumferential edge of the light inlet portion 204. The step of etching the cover 20 into a groove 202 that is recessed in a first direction toward a side away from the chip substrate 10 includes: etching the light inlet portion 204 into a groove 202 that is recessed in a first direction toward a side away from the chip substrate 10.

[0057] Specifically, the cover 20 includes a protective frame portion 203 and a light inlet portion 204, wherein the protective frame portion 203 is arranged at the circumferential edge of the light inlet portion 204, and the protective frame portion 203 can not only fix the visible light inlet 201 and provide structural support for the visible light inlet 201, but also play a buffering and protective role, which can reduce the risk of deformation or damage caused by external impact, vibration, etc., and can make the overall structure of the infrared scene generating device 100 more stable.

[0058] Furthermore, the visible light inlet 201 is located at the light input portion 204, and the etching operation on the cover 20 is to etch a groove 202 that is recessed in the first direction toward the side away from the chip substrate 10 in the light input portion 204. This can improve the transmittance of the light input portion 204 of the cover 20 while improving the structural stability of the cover 20, thereby improving the utilization rate of light energy and improving the imaging efficiency and imaging quality of the infrared scene generating device 100.

[0059] In some embodiments of the present invention, the protection frame 203 may be a detachable frame made of metal or alloy, and the material of the light-incoming portion 204 includes glass, sapphire, and quartz.

[0060] Combination Figure 1-Figure 5 As shown, at least one of the visible light inlet 201 and the light exit surface 102 of the chip substrate 10 is provided with an anti-reflection film. Specifically, by providing at least one of the visible light inlet 201 and the light exit surface 102 of the chip substrate 10 with an anti-reflection film, the reflected light on the surface of the visible light inlet 201 and / or the light exit surface 102 of the chip substrate 10 can be reduced to improve the transmittance of the visible light inlet 201 and / or the light exit surface 102 of the chip substrate 10, thereby not only improving the imaging quality of the infrared scene generation device 100, but also reducing the light energy loss and improving the utilization rate of the light energy.

[0061] In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as limiting the present invention.

[0062] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "illustrative embodiments", "examples", "specific examples", or "some examples" means that the specific features, structures, materials, or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representation of the above terms does not necessarily refer to the same embodiment or example.

[0063] Although the embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions and variations may be made to the embodiments without departing from the principles and spirit of the present invention, and that the scope of the present invention is defined by the claims and their equivalents.

Claims

1. A method for manufacturing an infrared scene generating device, characterized in that: include: Preparing a chip substrate (10), wherein the chip substrate (10) has a light-incoming surface (101) and a light-outgoing surface (102) that are opposite to each other in a first direction, and the light-incoming surface (101) of the chip substrate (10) is provided with a sensitive unit (103); A cover (20) is arranged on the light-incoming surface (101) of the chip substrate (10), wherein the cover (20) has a visible light inlet (201), and the visible light inlet (201) corresponds to the sensitive unit (103) in a first direction and is arranged at a distance from each other; The inner cavity formed by the sealing cover (20) and the chip substrate (10) is evacuated to a vacuum through a vacuum system, and heated so that the sealing cover (20) and the chip substrate (10) are connected and fixed.

2. The method for manufacturing an infrared scene generating device according to claim 1, characterized in that: The step of heating so that the cover (20) and the chip substrate (10) are connected and fixedly connected further comprises: A solder piece (30) is provided between the chip substrate (10) and the cover (20); The heating enables the solder member (30) to connect and fix the chip substrate (10) and the cover (20).

3. The method for manufacturing the infrared scene generating device (100) according to claim 2, characterized in that: The solder piece (30) is at least one of an alloy solder sheet and a bonding agent.

4. The method for manufacturing an infrared scene generating device according to claim 2, characterized in that: Before the step of providing a cover (20) on the light-incoming surface (101) of the chip substrate (10), the step further includes: An air getter (40) is arranged on the light-incoming surface (101) of the chip substrate (10).

5. The method for manufacturing an infrared scene generating device according to claim 4, characterized in that: The air suction member (40) is located between the sensitive unit (103) and the solder member (30) and is extended in the circumferential direction of the chip substrate (10).

6. The method for manufacturing an infrared scene generating device according to claim 2, characterized in that: The step of providing a solder member (30) between the chip substrate (10) and the cover (20) further comprises: A support member (50) is arranged between the chip substrate (10) and the cover (20), wherein the solder member (30) comprises a first solder member (301) and a second solder member (302), the first solder member (301) is arranged between the support member (50) and the cover (20), and the second solder member (302) is arranged between the support member (50) and the chip substrate (10).

7. The method for manufacturing an infrared scene generating device according to claim 5, characterized in that: The air suction member (40) is circumferentially extended outside the sensitive unit (103), the air suction member (40) corresponds to the second solder member (302) and is located in the inner circle of the second solder member (302); and / or The air suction member (40) corresponds to the first solder member (301) and is located in the inner circle of the first solder member (301); and / or The air suction member (40) corresponds to the support member (50) and is located in the inner circle of the support member (50).

8. The method for manufacturing an infrared scene generating device according to claim 4, characterized in that: The sensitive unit (103) and the projection of the air suction member (40) in the first direction are arranged at a distance from each other.

9. The method for manufacturing an infrared scene generating device according to claim 1, characterized in that: The sensitive unit (103) is a light-to-heat conversion unit.

10. The method for manufacturing an infrared scene generating device according to claim 1, characterized in that: The chip substrate (10) is a silicon carbide substrate, and the transmittance of the chip substrate (10) in the infrared band is a, and the value range of a is: a>70%.

11. The method for manufacturing an infrared scene generating device according to claim 1, characterized in that: Before the step of providing a cover (20) on the light-incoming surface (101) of the chip substrate (10), the step further includes: The cover (20) is etched to form a groove (202) that is recessed in a first direction toward a side away from the chip substrate (10), wherein the visible light inlet (201) corresponds to the groove (202).

12. The method for manufacturing an infrared scene generating device according to claim 11, characterized in that: The cover (20) comprises a protective frame portion (203) and a light inlet portion (204), the visible light inlet (201) is located at the light inlet portion (204), the protective frame portion (203) is arranged at the circumferential edge of the light inlet portion (204), and the step of etching the cover (20) to form a groove (202) that is recessed in a first direction toward a side away from the chip substrate (10) comprises: The light-incoming portion (204) is etched to form a groove (202) that is recessed in a first direction toward a side away from the chip substrate (10).

13. The method for manufacturing an infrared scene generating device according to claim 1, characterized in that: At least one of the visible light inlet (201) and the light exit surface (102) of the chip substrate (10) is provided with an anti-reflection film.

Images