Display device and method of manufacturing same

Abstract

A display device and a method of manufacturing the display device are provided. The display device includes: a substrate; a pixel electrode disposed on the substrate; an intermediate layer disposed on the pixel electrode; and a common electrode disposed on the intermediate layer. The common electrode includes a silver (Ag) material doped with a first metal.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims priority to and all benefits of Korean Patent Application No. 10-2023-0144177 filed in the Korean Intellectual Property Office on October 25, 2023, the entire contents of which are incorporated herein by reference. Technical Field

[0003] One or more embodiments relate to devices and methods, and more particularly, to a display device and a method of manufacturing the display device. Background Art

[0004] Currently, mobile electronic devices are widely used. In addition to small electronic devices such as mobile phones, tablet personal computers (PCs) have recently been widely used as mobile electronic devices.

[0005] Some mobile electronic devices may include a display device to support various functions and provide visual information such as images or videos to a user. Recently, as the size of other components for driving the display device decreases, the proportion of the display device relative to other components in the electronic device has gradually increased, and a structure that can be bent from a flat state according to a predetermined angle is also being developed. Summary of the invention

[0006] One or more embodiments include a common electrode including a silver (Ag) material doped with a first metal. The common electrode includes particles combining the silver (Ag) material and the first metal.

[0007] However, the objectives are examples, and objectives to be solved by the present disclosure are not limited thereto.

[0008] Additional aspects will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the presented embodiments of the disclosure.

[0009] According to one or more embodiments, a display device includes a substrate, a pixel electrode disposed on the substrate, an intermediate layer disposed on the pixel electrode, and a common electrode disposed on the intermediate layer, wherein the common electrode includes a silver (Ag) material doped with a first metal.

[0010] The display device may further include a cover layer disposed on the common electrode.

[0011] The first metal may include at least one material among aluminum (Al) and copper (Cu).

[0012] The doping concentration of the first metal may be in the range from about 5% to about 20%.

[0013] The common electrode may have a thickness of about 0.01 μm to about 10 μm.

[0014] The common electrode may include a plurality of particles combining the silver (Ag) material and the first metal.

[0015] A path of light emitted from the intermediate layer may change as the light is incident on the plurality of particles.

[0016] The plurality of particles may be uniformly distributed in the common electrode.

[0017] According to one or more embodiments, a method for manufacturing a display device includes setting a pixel electrode on a substrate, setting an intermediate layer on the pixel electrode, and setting a common electrode on the intermediate layer, wherein the setting of the common electrode includes spraying silver (Ag) material on the intermediate layer, and spraying a first metal on the intermediate layer.

[0018] The spraying rate of the first metal can be from about to about within the range.

[0019] The method may further include providing a capping layer on the common electrode.

[0020] The first metal may include at least one material among aluminum (Al) and copper (Cu).

[0021] The doping concentration of the first metal may be in the range from about 5% to about 20%.

[0022] The thickness of the common electrode may be in the range from about 0.01 μm to about 10 μm.

[0023] The silver (Ag) material and the first metal may be combined to form a plurality of particles.

[0024] A path of light emitted from the intermediate layer may change as the light is incident on the plurality of particles.

[0025] The plurality of particles may be uniformly distributed in the common electrode.

[0026]

[0013] Other aspects, features, and advantages in addition to those described herein will become apparent from the accompanying drawings, claims, and detailed description of exemplary embodiments supported by the present disclosure. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] The above and other aspects, features and advantages of certain embodiments of the present disclosure will become more apparent from the following description in conjunction with the accompanying drawings, in which:

[0028] Figure 1 is a plan view schematically showing a display device according to an embodiment;

[0029] Figure 2 is a cross-sectional view schematically showing a display device according to an embodiment;

[0030] Figure 3 is an equivalent circuit diagram of any one pixel of the display device according to the embodiment;

[0031] Figure 4 is a cross-sectional view schematically showing a display device according to an embodiment;

[0032] Figure 5 is a graph showing an example first condition for forming a common electrode;

[0033] Figure 6 shows a cross-sectional view schematically showing a display device including a common electrode formed according to a first condition and experimental data;

[0034] Figure 7 is a graph showing an example second condition for forming a common electrode; and

[0035] Figure 8 A cross-sectional view schematically showing a display device including a common electrode formed according to the second condition and experimental data is shown. DETAILED DESCRIPTION

[0036] Now will be referred to in detail embodiment, the example of embodiment is shown in the accompanying drawings, in which the same reference numerals always refer to the same element. In this regard, the embodiment presented can have different forms, and should not be construed as being limited to the description set forth herein. Therefore, the embodiment is described herein only by reference to the accompanying drawings to illustrate the aspects of this description. As used herein, the term "and / or" includes any combination and all combinations of one or more of the relevant listed items. Throughout the disclosure, the statement "at least one (kind / person) of a, b and c" represents only a, only b, only c, both a and b, both a and c, both b and c, all of a, b and c or its variants.

[0037] Since the present disclosure allows various changes and many embodiments, specific embodiments will be shown in the drawings and described in detail in the written description. The effects and features of the present disclosure and the methods for achieving these effects and features will become apparent by reference to the embodiments that will be described in detail later with reference to the drawings. However, the present disclosure is not limited to the following embodiments, but can be implemented in various forms.

[0038] Hereinafter, embodiments of the present disclosure will be described in detail with reference to the accompanying drawings, and in the description with reference to the accompanying drawings, like reference numerals refer to like elements and redundant descriptions thereof will be omitted.

[0039] It will be understood that, although the terms "first" and "second", etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are used to distinguish one element from another element.

[0040] Unless otherwise defined in the context, a singular expression may include a plural expression.

[0041] In the following embodiments, terms such as including or having as examples refer to the presence of features or elements described in the specification, and do not preclude an embodiment in which one or more other features or elements are added.

[0042] In the embodiments herein, it will be understood that when a part (such as a layer, region or element for example) is referred to as being "on" or "over" another part, the part may be directly on or over the other part or intervening parts may also be present.

[0043] In addition, in the drawings, the size of the elements may be exaggerated or reduced for the convenience of description. For example, for the convenience of description, the size and thickness of the elements in the drawings are arbitrarily shown, and the following embodiments are not limited thereto.

[0044] In the embodiments herein, the x-axis direction, the y-axis direction, and the z-axis direction are not limited to the three axes on the rectangular coordinate system, but can be understood to include these axes. For example, the x-axis direction, the y-axis direction, and the z-axis direction can be at right angles, or can also refer to different directions that are not at right angles to each other.

[0045] When the embodiment is implemented in another way, the predetermined process order may be different from the described order. For example, two processes described in succession may be performed substantially simultaneously, or may be performed in the reverse order of the described order.

[0046] As used herein, the term "substantially" means approximately or virtually. As used herein, the term "substantially equal" means approximately equal or virtually equal (e.g., within a threshold percentage of being equal). As used herein, the term "substantially the same" means approximately the same or virtually the same (e.g., within a threshold difference amount). As used herein, the term "substantially simultaneously" means approximately or virtually simultaneous.

[0047] As used herein, the term "approximately" or "approximately" includes the stated value and includes a suitable deviation range for the particular value determined by one of ordinary skill in the art, taking into account the measurement in question and the errors associated with the measurement of a particular quantity. For example, the term "approximately" can mean within one or more standard deviations, or within ±30%, ±20%, ±10%, or ±5% of the stated value.

[0048] Figure 1 is a plan view schematically showing a display device 1 according to the embodiment.

[0049] refer to Figure 1 The display device 1 manufactured according to the embodiment may include a display area DA and a peripheral area PA located outside the display area DA. The display device 1 may provide an image through an array of a plurality of pixels PX two-dimensionally arranged in the display area DA.

[0050] In some embodiments, the peripheral area PA is an area where no image is provided, and the peripheral area PA may completely or partially surround the display area DA. The display device 1 may include a driver, etc., arranged in the peripheral area PA, for providing electrical signals or power to a plurality of pixel circuits respectively corresponding to the pixels PX. The display device 1 may include a pad arranged in the peripheral area PA, which is an area to which an electronic component or a printed circuit board can be electrically connected.

[0051] In the following, according to one or more embodiments of the present disclosure, the display device 1 is described as including an organic light emitting diode OLED (see Figure 2 ). However, the embodiments of the display device 1 are not limited thereto. As another example, the display device 1 may be a light-emitting display device including an inorganic light-emitting diode, that is, an inorganic light-emitting display device. The inorganic light-emitting diode may include a PN junction diode containing an inorganic semiconductor-based material. When a voltage is applied to the PN junction diode in a forward direction, holes and electrons are injected, and the energy generated by the recombination of holes and electrons is converted into light energy to emit light of a specific color. The inorganic light-emitting diode described herein may have a width of several microns to several hundred microns, and in some embodiments, the inorganic light-emitting diode may be referred to as a micro light-emitting diode (LED). In one or more other embodiments, the display device 1 may be a quantum dot light-emitting display device.

[0052] The display device 1 can be used for portable electronic devices (such as mobile phones, smart phones, tablet personal computers (PCs), mobile communication terminals, electronic notebooks, electronic books, portable multimedia players (PMPs), navigation devices, and ultra-mobile personal computers (UMPCs) as examples), and also as a display screen for various products (such as televisions, notebook computers, monitors, billboards, and Internet of Things (IoT) devices as examples). In addition, the display device 1 according to the embodiment can be used for wearable devices (such as smart watches, watch phones, glasses-type displays, and head-mounted displays (HMDs) as examples). In addition, the display device 1 according to the embodiment can be used as a central information display (CID) arranged on a dashboard, a center fascia, or a dashboard of a vehicle, an indoor rearview mirror display that replaces the side mirrors of the vehicle, and a display arranged on the back of the front seats as an entertainment element for the rear seats of the vehicle.

[0053] Figure 2 is a cross-sectional view schematically showing a display device 1 according to an embodiment, and may correspond to a cross-sectional view along Figure 1 1 is a cross-sectional view of the display device 1 taken along line II-II'.

[0054] refer to Figure 2 The display device 1 may include a stacked structure of a substrate 100 , a pixel circuit layer PCL, a display element layer DEL, a cover layer CPL, and an encapsulation layer 300 .

[0055] The substrate 100 may have a multilayer structure including a base layer including a polymer resin and an inorganic layer. For example, the substrate 100 may include a base layer including a polymer resin and a barrier layer of an inorganic insulating layer. For example, the substrate 100 may include a first base layer 101, a first barrier layer 102, a second base layer 103, and a second barrier layer 104 stacked in sequence. The first base layer 101 and the second base layer 103 may include polyimide (PI), polyethersulfone (PES), polyarylate, polyetherimide (PEI), polyethylene naphthalate (PEN), polyethylene terephthalate (PET), polyphenylene sulfide (PPS), polycarbonate, triacetyl cellulose (TAC) and / or cellulose acetate propionate (CAP). The first barrier layer 102 and the second barrier layer 104 may include an inorganic insulating material, such as silicon oxide, silicon oxynitride and / or silicon nitride. The substrate 100 may be flexible.

[0056] The pixel circuit layer PCL is disposed on the substrate 100 . Figure 2A pixel circuit layer PCL is shown, which includes a thin film transistor TFT and a buffer layer 111, a first gate insulating layer 112, a second gate insulating layer 113, an interlayer insulating layer 114, a first planarizing insulating layer 115 and a second planarizing insulating layer 116 arranged below and / or on components of the thin film transistor TFT.

[0057] The buffer layer 111 may reduce or block penetration of foreign matter, moisture, or external air from the substrate 100 (e.g., penetration from below the substrate 100), and may provide a flat surface on the substrate 100. The buffer layer 111 may include an inorganic insulating material (such as silicon oxide, silicon oxynitride, and / or silicon nitride, for example), and may have a single-layer structure or a multi-layer structure including one or more inorganic insulating materials.

[0058] The thin film transistor TFT on the buffer layer 111 may include a semiconductor layer Act, and the semiconductor layer Act may include polycrystalline silicon (poly-Si). Alternatively, or additionally, the semiconductor layer Act may include amorphous silicon (a-Si), an oxide semiconductor, an organic semiconductor, etc. The semiconductor layer Act may include a channel region C. The semiconductor layer Act may include a drain region D and a source region S respectively disposed on both sides of the channel region C. The gate electrode GE may overlap the channel region C.

[0059] The gate electrode GE may include a low resistance metal material, a conductive material including molybdenum (Mo), aluminum (Al), copper (Cu), titanium (Ti), etc., and may have a multi-layer structure or a single-layer structure including the conductive material.

[0060] The first gate insulating layer 112 between the semiconductor layer Act and the gate electrode GE may include an inorganic insulating material such as silicon oxide (SiO 2 ), silicon nitride (SiN x ), silicon oxynitride (SiO x N y ), aluminum oxide (Al 2 O 3 ), titanium oxide (TiO 2 ), Tantalum Oxide (Ta 2 O 5 ), hafnium oxide (HfO 2 ) or zinc oxide (ZnO x ) as an example. Zinc oxide (ZnO x ) may include zinc oxide (ZnO) and / or zinc peroxide (ZnO 2 ).

[0061] The second gate insulating layer 113 may be provided so that the second gate insulating layer 113 covers the gate electrode GE. Similar to the first gate insulating layer 112, the second gate insulating layer 113 may include an inorganic insulating material such as silicon oxide (SiO 2 ), silicon nitride (SiN x ), silicon oxynitride (SiO x N y ), aluminum oxide (Al 2 O 3 ), titanium oxide (TiO 2 ), Tantalum Oxide (Ta 2 O 5 ), hafnium oxide (HfO 2 ) or zinc oxide (ZnO x ) as an example. Zinc oxide (ZnO x ) may include zinc oxide (ZnO) and / or zinc peroxide (ZnO 2 ).

[0062] The upper electrode Cst2 of the storage capacitor Cst may be disposed on the second gate insulating layer 113. The upper electrode Cst2 may overlap the gate electrode GE disposed below the upper electrode Cst2. The gate electrode GE and the upper electrode Cst2 overlapping each other and the second gate insulating layer 113 between the gate electrode GE and the upper electrode Cst2 may form the storage capacitor Cst. That is, the gate electrode GE may serve as the lower electrode Cst1 of the storage capacitor Cst.

[0063] As described herein, the storage capacitor Cst and the thin film transistor TFT may overlap each other. In some embodiments, the storage capacitor Cst may not overlap the thin film transistor TFT.

[0064] The upper electrode Cst2 may include aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), calcium (Ca), molybdenum (Mo), titanium (Ti), tungsten (W) and / or copper (Cu), and the upper electrode Cst2 may be a single layer or a multilayer including the materials described herein.

[0065] The interlayer insulating layer 114 may cover the upper electrode Cst2. The interlayer insulating layer 114 may include an inorganic insulating material such as silicon oxide (SiO 2 ), silicon nitride (SiN x ), silicon oxynitride (SiO x N y ), aluminum oxide (Al 2 O 3 ), titanium oxide (TiO 2 ), Tantalum Oxide (Ta2 O 5 ), hafnium oxide (HfO 2 ) or zinc oxide (ZnO x ) as an example. Zinc oxide (ZnO x ) may include zinc oxide (ZnO) and / or zinc peroxide (ZnO 2 ). The interlayer insulating layer 114 may include a single layer or a plurality of layers including the described inorganic insulating material.

[0066] The drain electrode DE and the source electrode SE may each be located on the interlayer insulating layer 114. The drain electrode DE and the source electrode SE may be connected to the drain region D and the source region S through contact holes formed in the insulating layer below the drain electrode DE and the source electrode SE, respectively. The drain electrode DE and the source electrode SE may include a material having good conductivity (e.g., greater than or equal to a threshold conductivity value). The drain electrode DE and the source electrode SE may include a conductive material including molybdenum (Mo), aluminum (Al), copper (Cu), or titanium (Ti), etc., and the drain electrode DE and the source electrode SE may each be a multilayer or a single layer including the materials described herein. In an embodiment, the drain electrode DE and the source electrode SE may each have a multilayer structure of titanium / aluminum / titanium.

[0067] The first planarization insulating layer 115 may cover the drain electrode DE and the source electrode SE. The first planarization insulating layer 115 may include an organic insulating layer including materials such as general polymers (such as polystyrene (PS) as an example), polymethyl methacrylate (PMMA), polymer derivatives having phenol groups, acrylic acid-based polymers, imide-based polymers, aryl ether-based polymers, amide-based polymers, fluorine-based polymers, p-xylene-based polymers, vinyl alcohol-based polymers, and mixtures of general polymers as examples.

[0068] The second planarization insulating layer 116 may be disposed on the first planarization insulating layer 115. The second planarization insulating layer 116 may include the same material as the first planarization insulating layer 115, and the second planarization insulating layer 116 may include an organic insulating layer including a material such as a general polymer (such as polystyrene (PS) as an example), polymethyl methacrylate (PMMA), a polymer derivative having a phenol group, an acrylic polymer, an imide polymer, an aryl ether polymer, an amide polymer, a fluorine polymer, a p-xylene polymer, a vinyl alcohol polymer, and a mixture of general polymers as an example.

[0069] The display element layer DEL may be disposed on the pixel circuit layer PCL having the described structure. The display element layer DEL may include an organic light emitting diode OLED as a display element (i.e., a light emitting element), and the organic light emitting diode OLED may include a stacked structure including a pixel electrode 210, an intermediate layer 220, and a common electrode 230. For example, the organic light emitting diode OLED may emit red light, green light, or blue light, or may emit red light, green light, blue light, or white light. The organic light emitting diode OLED emits light through a light emitting region, and the light emitting region may be defined as a pixel PX.

[0070] The pixel electrode 210 of the organic light emitting diode OLED may be electrically connected to the thin film transistor TFT through a contact hole formed in the second planarization insulating layer 116 and the first planarization insulating layer 115 and a contact metal CM disposed on the first planarization insulating layer 115. That is, for example, the pixel electrode 210 may be disposed on the substrate 100.

[0071] The pixel electrode 210 may include a conductive oxide such as indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium oxide (In 2 O 3 ), indium gallium oxide (IGO) or aluminum zinc oxide (AZO) as examples. In one or more other embodiments, the pixel electrode 210 may include a reflective layer including silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), palladium (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr) or a compound thereof. In one or more other embodiments, the pixel electrode 210 may have a reflective layer including ITO, IZO, ZnO or In 2 O 3 The layer is located above or below the described reflective layer.

[0072] A bank layer 117 having an opening 117OP exposing a central portion of the pixel electrode 210 may be disposed on the pixel electrode 210. The bank layer 117 may include an organic insulating material and / or an inorganic insulating material. The opening 117OP may define a light emitting region of light emitted from the organic light emitting diode OLED. For example, the size / width of the opening 117OP may correspond to the size / width of the light emitting region. Therefore, the size and / or width of the pixel PX may be based on the size and / or width of the opening 117OP of the corresponding bank layer 117, or may correspond to the size and / or width of the opening 117OP of the corresponding bank layer 117.

[0073] The intermediate layer 220 may include an emission layer 222 formed to correspond to the pixel electrode 210. The emission layer 222 may include a polymer material or a low-molecular organic material that emits light of a specific color. Alternatively, or additionally, the emission layer 222 may include an inorganic light-emitting material or a quantum dot. That is, the intermediate layer 220 may be disposed on the pixel electrode 210 and emit light.

[0074] In an embodiment, the intermediate layer 220 may include a first functional layer 221 and a second functional layer 223 disposed below and above the emission layer 222, respectively. For example, the first functional layer 221 may include a hole transport layer (HTL), or the first functional layer 221 may include an HTL and a hole injection layer (HIL). The second functional layer 223 is a component disposed on the emission layer 222, and may include an electron transport layer (ETL) and / or an electron injection layer (EIL). The first functional layer 221 and / or the second functional layer 223 may include a common layer formed so that the common layer can completely cover the substrate 100, similar to the common electrode 230 to be described later.

[0075] The common electrode 230 may be disposed on the pixel electrode 210 and overlap the pixel electrode 210. The common electrode 230 may be disposed on the intermediate layer 220. The common electrode 230 may include a conductive material having a low work function (e.g., at or below a threshold work function). For example, the common electrode 230 may include a (semi) transparent layer containing silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), palladium (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca), or an alloy thereof. Optionally, or additionally, the common electrode 230 may include a layer on the (semi) transparent layer including the described material, the layer including a conductive material such as ITO, IZO, ZnO, or In. 2 O 3 The common electrode 230 may be formed integrally so that the common electrode 230 covers the entire substrate 100 .

[0076] The cap layer CPL may be disposed on the display element layer DEL and cover the display element layer DEL. That is, the cap layer CPL may be disposed on the common electrode 230. The cap layer CPL may have a refractive index higher than that of the common electrode 230. For example, at a wavelength of about 530 nm, the cap layer CPL may have a refractive index of about 1.9 to about 2.3. The thickness of the cap layer CPL may be in the range of about 1.5 to about 2.0. to about Preferably, the thickness of the cap layer CPL can be in the range of about to about within the range.

[0077] In the present disclosure, a cap layer CPL having a relatively high refractive index may be disposed on the common electrode 230, and due to the cap layer CPL, reflectivity of light emitted from the intermediate layer 220 from the common electrode 230 may be increased. Therefore, the resonance efficiency of the microresonance structure is improved, thereby increasing the light extraction efficiency of the organic light emitting diode OLED.

[0078] Here, reflection from the common electrode 230 may refer to reflection from the lower surface of the common electrode 230. Reflection from the common electrode 230 may also refer to reflection at an interface between the common electrode 230 and the capping layer CPL or an interface between the capping layer CPL and the encapsulation layer 300.

[0079] According to an embodiment, the capping layer CPL may include a triamine derivative, a carbazole biphenyl derivative, an aryl diamine derivative, or a quinoline aluminum complex (eg, 8-hydroxyquinoline aluminum (Alq 3 )), etc. Aspects of the present disclosure support adjusting the composition of a derivative and / or one or more other properties of the derivative in association with achieving a material having a refractive index as a function of wavelength as described herein.

[0080] The encapsulation layer 300 may be disposed on the cap layer CPL. That is, the encapsulation layer 300 may be disposed on the display element layer DEL and cover the display element layer DEL. The encapsulation layer 300 may include at least one inorganic encapsulation layer and at least one organic encapsulation layer. Figure 2 The depicted encapsulation layer 300 may include a first inorganic encapsulation layer 310 , an organic encapsulation layer 320 , and a second inorganic encapsulation layer 330 that are sequentially stacked.

[0081] The first inorganic encapsulation layer 310 and the second inorganic encapsulation layer 330 may include at least one inorganic material selected from aluminum oxide, titanium oxide, tantalum oxide, hafnium oxide, zinc oxide, silicon oxide, silicon nitride, and silicon oxynitride. The organic encapsulation layer 320 may include a polymer-based material. The polymer-based material may include an acrylic resin, an epoxy resin, a polyimide, and polyethylene, etc. In an embodiment, the organic encapsulation layer 320 may include an acrylate-based resin. The organic encapsulation layer 320 may be formed by curing a monomer or applying a polymer. The organic encapsulation layer 320 may be transparent.

[0082] Although not shown, a touch sensor layer may be provided on the encapsulation layer 300, and an optical functional layer may be provided on the touch sensor layer. Using the touch sensor layer, coordinate information according to an external input (e.g., a touch event) may be obtained. The optical functional layer may reduce the reflectivity of light (external light) incident from the outside toward the display device 1, and / or improve the color purity of light emitted from the display device 1. In an embodiment, the optical functional layer may include a phase retarder and / or a polarizer. The phase retarder may be a film type or a liquid crystal coating type, and the phase retarder may include a λ / 2 phase retarder and / or a λ / 4 phase retarder. The polarizer may be a film type or a liquid crystal coating type. A film type polarizer may include a stretched synthetic resin film, and a liquid crystal coating type polarizer may include liquid crystals arranged in a specific arrangement. The phase retarder and the polarizer may further include a protective film.

[0083] An adhesive member may be disposed between the touch electrode layer and the optical function layer. The adhesive member may be any general material known in the art without limitation. The adhesive member may be a pressure sensitive adhesive (PSA) member.

[0084] Figure 3 is an equivalent circuit diagram of any one pixel PX of the display device 1 according to the embodiment.

[0085] Each pixel PX may include a pixel circuit PC and a display element connected to the pixel circuit PC, for example, an organic light emitting diode OLED. The pixel circuit PC may include a first thin film transistor T1, a second thin film transistor T2, and a storage capacitor Cst. Each pixel PX may emit, for example, red light, green light, blue light, or white light through the organic light emitting diode OLED.

[0086] The second thin film transistor T2 may be a switching thin film transistor and may be connected to the scan line SL and the data line DL. The second thin film transistor T2 may be configured to transmit a data voltage input from the data line DL to the first thin film transistor T1 based on a switching voltage input from the scan line SL. The storage capacitor Cst may be connected to the second thin film transistor T2 and the driving voltage line PL. The storage capacitor Cst may store a voltage corresponding to a difference between a voltage received from the second thin film transistor T2 and a first power voltage ELVDD supplied to the driving voltage line PL.

[0087] The first thin film transistor T1 may be a driving thin film transistor and may be connected to the driving voltage line PL and the storage capacitor Cst. The first thin film transistor T1 may control a driving current flowing from the driving voltage line PL through the organic light emitting diode OLED in response to a voltage stored at the storage capacitor Cst. The organic light emitting diode OLED may emit light having a specific brightness according to the driving current. A common electrode (e.g., a cathode) of the organic light emitting diode OLED may receive a second power voltage ELVSS.

[0088] Although Figure 3 The pixel circuit PC includes two thin film transistors and a storage capacitor Cst, but the pixel circuit PC according to the embodiment of the present disclosure is not limited thereto. The number of thin film transistors and the number of storage capacitors may vary based on the design of the pixel circuit PC. For example, the pixel circuit PC may include any suitable number of thin film transistors and storage capacitors that support the features of the pixel circuit PC. In some embodiments, the pixel circuit PC may include (as described herein with reference to Figure 3 described) two thin film transistors, four thin film transistors, or five or more thin film transistors.

[0089] Figure 4 is a cross-sectional view schematically showing a display device 1 according to an embodiment. In detail, Figure 4 yes Figure 2 An enlarged view of part A of FIG.

[0090] exist Figure 4 In, with Figure 2 The same reference numerals as in the accompanying drawings refer to the same components, and repeated descriptions thereof will be omitted.

[0091] refer to Figure 4 , the intermediate layer 220 may be disposed on the pixel electrode 210, the common electrode 230 may be disposed on the intermediate layer 220, and the capping layer CPL may be disposed on the common electrode 230. In detail, the intermediate layer 220 may include a first functional layer 221, an emission layer 222, and a second functional layer 223.

[0092] The common electrode 230 may include a silver (Ag) material doped with a first metal. The common electrode 230 may include a granular PT in which the silver (Ag) material and the first metal are combined. For example, the granular PT may be formed of silver (Ag) and the first metal.

[0093] Therefore, the path of the light LT emitted from the intermediate layer 220 may be changed as the light is incident on the particles PT of the common electrode 230 (e.g., makes contact with the particles PT of the common electrode 230). The light LT emitted and dispersed from the intermediate layer 220 may make contact with the particles PT, and the path of the light LT may be changed in a direction perpendicular to the substrate (e.g., Figure 2The change in the path of the light LT emitted from the intermediate layer 220 due to contact with the particles PT can reduce the angle-dependent spectral distortion and the resulting white angle dependence (WAD) associated with the display device 1. Therefore, for example, the brightness and white angle dependence (WAD) characteristics of the display device 1 can be improved using a relatively simple process.

[0094] In an example, a portion of the light LT emitted from the intermediate layer 220 may travel in a direction that is not perpendicular to the substrate (e.g., a direction different from the +z-axis direction) before coming into contact with the particle PT, and the same portion of the light LT may travel in a direction perpendicular to the substrate (e.g., the +z-axis direction) after coming into contact with the particle PT.

[0095] In another example, a portion of the light LT emitted from the intermediate layer 220 may travel in a direction perpendicular to the substrate (e.g., the +z-axis direction) before coming into contact with the particle PT, and the same portion of the light LT may travel in a direction not perpendicular to the substrate (e.g., a direction different from the +z-axis direction) after coming into contact with the particle PT.

[0096] The first metal may include at least one material from aluminum (Al) and copper (Cu). In an example where the first metal includes an aluminum (Al) material, the common electrode 230 may include an AgAl material. In some aspects, the doping concentration of the first metal may be in a range from about 5% to about 20%, and the thickness of the common electrode 230 may be in a range from about 0.01 μm to about 10 μm.

[0097] The particles PT may be uniformly distributed in the common electrode 230. For example, the particles PT may be distributed in the common electrode 230 so that the distances between one particle PT and other particles PT adjacent to the particle PT (for example, in the x-axis direction, the y-axis direction, and / or the z-axis direction) are substantially equal. Figure 4 The described aspects of the display device 1 are examples, and the material of the first metal, the doping concentration of the first metal, and the thickness of the common electrode 230 are not limited thereto.

[0098] Figure 5 is a graph showing an example first condition for forming the common electrode 230 . Figure 6 A cross-sectional view schematically showing a display device 1 including a common electrode 230 formed according to the first condition and experimental data is shown. Figure 7 is a graph showing an example second condition for forming the common electrode 230 . Figure 8 Schematically shows a cross-sectional view of a display device 1 including a common electrode 230 formed according to the second condition and experimental data. In detail, Figure 6and Figure 8 yes Figure 2 An enlarged view of part A of FIG.

[0099] exist Figures 5 to 8 In, with Figure 2 The same reference numerals as in the figures refer to the same components, and repeated descriptions thereof will be omitted.

[0100] refer to Figures 5 to 8 , the intermediate layer 220 may be disposed on the pixel electrode 210, the common electrode 230 may be disposed on the intermediate layer 220, and the capping layer CPL may be disposed on the common electrode 230. In detail, the intermediate layer 220 may include a first functional layer 221, an emission layer 222, and a second functional layer 223.

[0101] A method for manufacturing a display device 1 according to one or more embodiments of the present disclosure is described herein. The method may include forming a substrate (e.g., Figure 2 A pixel electrode 210 is disposed on a substrate 100 in the substrate, an intermediate layer 220 is disposed on the pixel electrode 210, a common electrode 230 is disposed on the intermediate layer 220, and a cover layer CPL is disposed on the common electrode 230.

[0102] In detail, the arrangement of the common electrode 230 may include spraying a silver (Ag) material on the intermediate layer 220 and spraying a first metal (also referred to herein as a first metal material) on the intermediate layer 220. The sprayed silver (Ag) material may be doped with the sprayed first metal, and a granular PT may be formed in the common electrode 230. That is, for example, spraying the first metal onto the silver (Ag) material may introduce impurities into the silver (Ag) material, change the properties of the silver (Ag) material, and / or form the granular PT described herein. Spraying the first metal onto the silver (Ag) material (and thereby doping the silver (Ag) material with the first metal) may determine one or more properties (e.g., light transmission properties, structural properties) of the common electrode 230 thus produced.

[0103] In the description of the method in this article, the operations may be performed in an order different from the order described, or the operations may be performed in a different order or at a different time. It is also possible to omit specific operations, repeat one or more operations, or add other operations to the method.

[0104] refer to Figure 5 and Figure 7 , the horizontal axis represents the spraying duration of the aluminum material as the first metal, and the vertical axis represents the spraying rate (also referred to herein as the spraying speed) of the aluminum material as the first metal. Specifically, the unit of measurement associated with the horizontal axis is seconds (sec), and the unit of measurement associated with the vertical axis is thickness per unit time. The spraying rate may refer to a rate at which a material (eg, an aluminum material or other material as a first metal, etc.) is dispersed or sprayed onto a layer (eg, the intermediate layer 220 ).

[0105] refer to Figure 5 , under the first condition, the spraying rate of the aluminum material was set to about to about In some respects, reference Figure 7 , under the second condition, the spraying rate of the aluminum material was set to about to about In another example, under the second condition, the spraying rate of the aluminum material is set to about to about

[0106] In both the first condition and the second condition, the thickness of the common electrode 230 is set to And the doping concentration of the aluminum material is set to 10%.

[0107] That is to say, although Figure 5 and Figure 7 It is not shown, but the doping concentration of the aluminum material is the same in the first condition and the second condition, and the spraying rate of the aluminum material is higher in the second condition than in the first condition, and therefore, in some embodiments, the spraying rate of the silver (Ag) material can be higher in the second condition than in the first condition.

[0108] In addition, Figure 5 and Figure 7 , although the spraying duration of the aluminum material is shown to be as long as 80 seconds, the thickness of the common electrode 230 in the first condition and the second condition is the same, and the aluminum material spraying rate is higher in the second condition than in the first condition, and therefore, the final spraying duration of the aluminum material is shorter in the second condition than in the first condition.

[0109] In other words, in the first condition and the second condition, after deposition is completed, the thickness of the common electrode 230 and the doping concentration of the aluminum material are the same, but in terms of the deposition process related to the first condition and the second condition, the deposition rate is higher in the second condition than in the first condition.

[0110] Compare Figure 6 and Figure 8 ,exist Figure 6 The concentration of the particles PT formed in the common electrode 230 is Figure 8The concentration of the granular PT formed in the common electrode 230 is different. Specifically, the concentration of the granular PT formed in the common electrode 230 is higher in the second condition than in the first condition. That is, when the thickness of the common electrode 230 and the doping concentration of the aluminum material are the same, the granular PT is more effectively formed (for example, according to a higher concentration) under the second condition where a faster deposition rate is set, compared with the formation of the granular PT under the first condition.

[0111] Aspects of the present disclosure have been described with reference to the exemplary embodiments shown in the accompanying drawings, but the embodiments are examples, and those skilled in the art will appreciate that various modifications and variations to these embodiments are possible therefrom. Therefore, the technical scope of the present disclosure should be determined by the technical spirit of the appended claims.

[0112] According to the embodiments of the present disclosure, the brightness and WAD characteristics of a display device may be improved through a relatively simple process.

[0113] The effects of the present disclosure are not limited to the above-mentioned effects, and other effects not mentioned will be clearly understood from the description of the claims by those skilled in the art.

[0114] It should be understood that the embodiments described herein should be considered in a descriptive sense and not for limiting purposes. The description of features or aspects within each embodiment should generally be considered applicable to other similar features or aspects in other embodiments. Although one or more embodiments have been described with reference to the accompanying drawings, it will be understood by those skilled in the art that various changes in form and detail may be made in the embodiments without departing from the spirit and scope defined by the appended claims.

Claims

1. A display device, wherein: The display device comprises: substrate; A pixel electrode is disposed on the substrate; an intermediate layer, disposed on the pixel electrode; and A common electrode is disposed on the intermediate layer, Wherein, the common electrode comprises a silver material doped with a first metal.

2. The display device according to claim 1, wherein: The display device further includes a cover layer disposed on the common electrode.

3. The display device according to claim 1, wherein: The first metal includes at least one material of aluminum and copper.

4. The display device according to claim 1, wherein: The doping concentration of the first metal ranges from 5% to 20%.

5. The display device according to claim 1, wherein: The thickness of the common electrode ranges from 0.01 μm to 10 μm.

6. The display device according to claim 1, wherein: The common electrode includes a plurality of particles combining the silver material and the first metal.

7. The display device according to claim 6, wherein: A path of light emitted from the intermediate layer changes as the light is incident on the plurality of particles.

8. The display device according to claim 6, wherein: The plurality of particles are uniformly distributed in the common electrode.

9. A method for manufacturing a display device, wherein: The method comprises: Disposing a pixel electrode on the substrate; Disposing an intermediate layer on the pixel electrode; and A common electrode is arranged on the intermediate layer, Wherein, the setting of the common electrode includes: spraying silver material on the intermediate layer; and A first metal is sprayed on the intermediate layer.

10. The method according to claim 9, wherein: The spraying rate of the first metal is from to within the range.

Images