Full-color OLED display device and manufacturing method

Abstract

The invention discloses a full-color OLED (Organic Light Emitting Diode) display device and a manufacturing method, belongs to the technical field of display devices, and provides a novel Real RGB (Red, Green, Blue) device structure manufactured by a photoetching method, mainly a metal lap joint structure on a pixel isolation structure. The metal lap joint structure is composed of a base, a metal column and a roof (shielding structure), and the base is used for supporting and increasing the binding force of the pixel isolation structure and the metal lap joint structure; the metal column is in a spindle shape through a wet etching process, so that the lap joint area with the cathode is increased, and the lap joint accuracy is improved; the roof is made of a dielectric material and is used for preventing the OLED layer from being evaporated on the metal columns; the designed metal lap joint structure can effectively prevent the OLED material from being evaporated on the metal column, and can ensure the effective lap joint of the cathode at the same time, thereby providing further mass production feasibility for the preparation of Real RGB by the photoetching method.

Description

Technical Field

[0001] The present invention relates to a full-color OLED display device, and in particular to a method for manufacturing a full-color OLED display device, belonging to the technical field of display devices. Background Art

[0002] The current mainstream technical solution for silicon-based OLED (OLEDoS) microdisplays is white light OLED emitting light, which generates RGB three colors through a filter (CF) to achieve full-color display. The main problems of this technology are low efficiency and serious crosstalk between sub-pixels. The Real RGB structure is that the R / G / B three-color OLEDs are respectively on the corresponding sub-pixels. Since this structure does not use CF, its efficiency is much higher than the traditional WOLED+CF solution. In addition, a reasonable Real RGB structure can also effectively reduce the crosstalk problem between sub-pixels. This invention proposes a process flow for RGB sub-pixel graphics suitable for OLEDoS to realize the structure of Real RGB OLEDoS.

[0003] The existing technology uses white light OLED to emit light, and forms red, green and blue colors through color filters to achieve full-color display. Its brightness is low, and the electrical crosstalk between sub-pixels is serious;

[0004] In the existing patents for implementing Real RGB using layout photolithography, although it is theoretically feasible, the cathode overlap problem has always been a difficult point, making it difficult to achieve mass production.

[0005] Therefore, a full-color OLED display device and a manufacturing method are needed to improve the above-mentioned deficiencies. Summary of the invention

[0006] The main purpose of the present invention is to provide a full-color OLED display device.

[0007] The purpose of the present invention can be achieved by adopting the following technical solutions:

[0008] A full-color OLED display device includes a substrate for a base, on which W-PIug, LED light-emitting units, metal, transparent conductive all-metal oxide, pixel isolation structure, SiNx, SiOx, metal lap structure, buffer layer, transition layer, metal II, shielding structure, LED material layer, red OLED, green OLED, blue OLED, cathode layer, thin film encapsulation layer, first encapsulation layer and second encapsulation layer are stacked and laid.

[0009] Preferably, the substrate is a silicon-based substrate, and the substrate contains a CMOS circuit silicon substrate;

[0010] W-PIug is the metal connection layer between CMOS and OLED, and provides power to OLED.

[0011] Preferably, the metal anode of the LED light-emitting unit is integrated on a silicon-based substrate, the metal is Al or Ag, and the transparent conductive all-metal oxide is a transparent conductive metal oxide such as ITO, IZO, or IGZO.

[0012] Preferably, the pixel isolation structure is a pixel isolation structure, the pixel isolation structure is to block the electrical influence between OLED sub-pixels, the buffer layer on the metal overlap structure is ITO, the transition layer is one of TiN or TaN, the metal two is one of Al, Ti, Mo, W, and the shielding structure is one of SiOx, SiNx, SiOxNy.

[0013] Preferably, the LED material layer is an OLED functional material layer, which includes HIL, HTL, EBL, EML, HBL, ETL, EIL functional layers, which can be phosphorescent, fluorescent or highly fluorescent OLED materials;

[0014] The cathode layer is a single-layer film of Mg, Ag, Al, IZO, AZO or a multi-layer composite film composed of one or more of the above materials, and the thin film encapsulation layer is a single-layer film of SiNx, SiOx, SiOxNy or a multi-layer composite film composed of two or more of the above materials.

[0015] Preferably, the full-color OLED display device also includes its packaging structure;

[0016] The upper and lower sides of the full-color OLED display device are respectively wrapped with packaging parts, and the packaging parts are composed of a hot-melt sealing end, a hot-melt part, a second packaging layer, a third packaging layer, a full-color OLED display part and a first packaging layer.

[0017] The package is composed of a first package layer, a second package layer and a third package layer. The first package layer, the second package layer and the third package layer are provided with hot-melt sealing ends extending from their outer ends, and hot-melt parts are distributed on the hot-melt sealing ends. A full-color OLED display is wrapped in the package.

[0018] The hot melt part is a hot melt structure, which can penetrate the hot melt sealing end to achieve the function of constant thickness and sealing.

[0019] Preferably, the packaging member (the first packaging layer, the second packaging layer and the third packaging layer are respectively connected and installed with a one-way valve, an exhaust hole, a splicing piece 1, a splicing piece 2, a clamping piece, a splicing hole, a splicing plug and a clamping plate;

[0020] An air guide is installed on the first packaging layer, a one-way valve is installed in the air guide, and a clamp is installed below the one-way valve;

[0021] A splicing piece 1 is installed on the second packaging layer, a clamping piece is installed on the splicing piece 1, and a splicing hole is opened on the clamping piece;

[0022] A splicing plug is installed around the second splicing piece.

[0023] Preferably, the engaging piece is inserted into a clamping plate at the inner bottom of the air guide piece, and the splicing plug is inserted into a splicing hole on the engaging piece for quick splicing connection.

[0024] A full-color OLED display device, the full-color OLED display device also includes the following manufacturing method:

[0025] Step 1: SiNx and SiO are deposited successively on a silicon-based backplane with an anode structure, and the deposition method can be ALD and PECVD;

[0026] Step 2: Use photolithography → dry etching → desizing process to make pixel isolation structure. SiNx and SiO have different etching selectivity ratios, and then dry etching is used to form an undercut structure. The undercut structure can pull the evaporated OLED film layer down to the inside of the undercut, reducing the contact area between the OLED film layer and the metal base.

[0027] Step 3: After forming the pixel isolation structure, a metal overlap structure (buffer layer / transition layer / metal II / shielding structure) is deposited, wherein the buffer layer / transition layer / metal II is deposited by PVD, and the shielding structure is deposited by CVD;

[0028] Step 4: Use photolithography → dry etching → descaling process to remove the material shielding structure in the area above the pixel, and the etching end point stops at Metal 2;

[0029] Step 5: At this time, the shielding structure is used as a hard mask layer of the metal overlap structure, and a wet etching process (the etching solution can be hot hydrochloric acid; dilute hydrofluoric acid or hydrofluoric acid / H2O2; high temperature and high concentration SC1NH4OH / H2O2 / H2O mixed solution) and SPMH2SO4 / H2O2 / H2O mixed solution)) is used to etch and remove the material buffer layer / transition layer / metal II of the pixel area to produce a metal isolation structure; it is particularly important to emphasize that: due to the isotropic characteristics of wet etching, the lateral etching rate of the metal on the upper part is fast, and the lateral etching rate of the metal on the lower part is slow, so that a spindle-shaped structure with a narrow top and a wide bottom can be formed;

[0030] Step 6: After forming the metal lap structure, the red OLED, cathode layer, first encapsulation layer and second encapsulation layer are deposited. The deposition methods are evaporation, Low Damage Sputter, ALD and CVD.

[0031] Step 7: Use photolithography → etching → degumming process to remove the material red OLED, cathode layer, first encapsulation layer and second encapsulation layer in the area other than the first sub-pixel. The etching process can be dry etching, wet etching or a combination of the two.

[0032] Step 8: Repeat 6 and 7 to deposit the green OLED, cathode layer, first encapsulation layer and second encapsulation layer, and use photolithography → etching → degumming process to remove the green OLED, cathode layer, first encapsulation layer and second encapsulation layer of the material in the area other than above the second sub-pixel;

[0033] Step 9: Repeat 6 and 7 to deposit the blue OLED, cathode layer, first encapsulation layer and second encapsulation layer, and use photolithography → etching → degumming process to remove the blue OLED, cathode layer, first encapsulation layer and second encapsulation layer of the material in the area other than the third sub-pixel;

[0034] Steps: placing the full-color OLED display component in the package and sealing it by hot melting, and hot melting the hot melt component during the hot melting process of the package;

[0035] Step: During the sealing process of the full-color OLED display, the excess gas in the package is discharged through the one-way valve in the gas guide.

[0036] Beneficial technical effects of the present invention:

[0037] The present invention provides a full-color OLED display device,

[0038] 1) The present invention provides a novel device structure for manufacturing Real RGB by photolithography, which is mainly a metal lap joint structure on a pixel isolation structure;

[0039] 2) The metal overlapping structure consists of a base, a metal column and a "roof" (shielding structure), wherein the base serves as a support and increases the bonding strength between the pixel isolation structure and the metal overlapping structure; the metal column is formed into a spindle shape through a wet etching process, thereby increasing the overlapping area with the cathode and improving the overlapping accuracy; the "roof" is a dielectric material, and its function is to prevent the OLED layer from being evaporated onto the metal column.

[0040] 3) The metal overlap structure designed in the present invention can effectively prevent the OLED material from being evaporated onto the metal column, while ensuring the effective overlap of the cathode, providing further mass production feasibility for the preparation of Real RGB by photolithography.

[0041] 4) Multi-layer synchronous packaging, and each layer is interconnected to achieve the function of exhausting gas during the packaging process. BRIEF DESCRIPTION OF THE DRAWINGS

[0042] Figure 1 A structure and a photolithography patterning process flow chart applicable to Real RGB OLEDoS according to a preferred embodiment of a full-color OLED display device and a manufacturing method of the present invention;

[0043] Figure 2430 is a structural schematic diagram of a preferred embodiment of a full-color OLED display device and a manufacturing method according to the present invention;

[0044] Figure 3 It is a schematic diagram of the overall process structure of a preferred embodiment of a full-color OLED display device and a manufacturing method according to the present invention;

[0045] Figure 4 It is a schematic diagram of the overall structure of a preferred embodiment of a full-color OLED display device and a manufacturing method according to the present invention;

[0046] Figure 5 A side view of the internal structure of a preferred embodiment of a full-color OLED display device and a manufacturing method according to the present invention;

[0047] Figure 6 A side view of the internal structure of a preferred embodiment of a full-color OLED display device and a manufacturing method according to the present invention;

[0048] Figure 7 A schematic diagram of an exhaust structure according to a preferred embodiment of a full-color OLED display device and a manufacturing method of the present invention;

[0049] Figure 8 A top view of an exhaust structure according to a preferred embodiment of a full-color OLED display device and a manufacturing method of the present invention;

[0050] Fig. 9 A side view of an exhaust structure according to a preferred embodiment of a full-color OLED display device and a manufacturing method of the present invention.

[0051] In the figure: 100, substrate; 110, W-PIug; 200, LED light-emitting unit; 210, metal; 220, transparent conductive all-metal oxide; 300, pixel isolation structure; 310, SiNx; 320, SiOx; 400, metal lap structure; 410, buffer layer; 420, transition layer; 430, metal II; 440, shielding structure; 500, LED material layer; 510, red OLED; 520, green OLED; 530, blue OLED; 600 , cathode layer; 700, thin film encapsulation layer; 710, first encapsulation layer; 720, second encapsulation layer; 1, encapsulation component; 101, hot melt sealing end; 102, hot melt component; 104, second encapsulation layer; 105, third encapsulation layer; 106, full-color OLED display component body; 107, first encapsulation layer; 2, air guide component; 201, one-way valve; 202, exhaust hole; 203, splicing component one; 204, splicing component two; 205, clamping component; 206, splicing hole; 207, splicing plug; 208, card board. DETAILED DESCRIPTION

[0052] In order to make the technical solution of the present invention more clear and specific to those skilled in the art, the present invention is further described in detail below in conjunction with embodiments and drawings, but the implementation manner of the present invention is not limited thereto.

[0053] like Figure 1 - Fig. 9 As shown, a full-color OLED display device provided by this embodiment includes a substrate 100 for a base, on which W-PIug 110, an LED light-emitting unit 200, a metal 210, a transparent conductive all-metal oxide 220, a pixel isolation structure 300, SiNx 310, SiOx 320, a metal overlapping structure 400, a buffer layer 410, a transition layer 420, a metal second 430, a shielding structure 440, an LED material layer 500, a red OLED 510, a green OLED 520, a blue OLED 530, a cathode layer 600, a thin film encapsulation layer 700, a first encapsulation layer 710 and a second encapsulation layer 720 are stacked.

[0054] The substrate 100 is a silicon-based substrate, and the substrate 100 contains a CMOS circuit silicon substrate;

[0055] W-PIug110 is the metal connection layer between CMOS and OLED, and provides power to OLED.

[0056] The metal anode of the LED light-emitting unit 200 is integrated on a silicon-based substrate, the metal 210 is metal Al or Ag, and the transparent conductive all-metal oxide 220 is a transparent conductive metal oxide such as ITO, IZO, or IGZO.

[0057] The pixel isolation structure 300 is a pixel isolation structure, which is used to block the electrical influence between OLED sub-pixels. The buffer layer 410 on the metal overlap structure 400 is ITO, the transition layer 420 is one of TiN or TaN, the metal 2 430 is one of Al, Ti, Mo, and W, and the shielding structure 440 is one of SiOx, SiNx, and SiOxNy.

[0058] The LED material layer 500 is an OLED functional material layer, which includes HIL, HTL, EBL, EML, HBL, ETL, and EIL functional layers, which can be phosphorescent, fluorescent, or highly fluorescent OLED materials;

[0059] The cathode layer 600 is a single-layer film of Mg, Ag, Al, IZO, AZO or a multi-layer composite film composed of two or more of the above materials, and the thin film encapsulation layer 700 is a single-layer film of SiNx, SiOx, SiOxNy or a multi-layer composite film composed of two or more of the above materials.

[0060] The full-color OLED display device also includes its packaging structure;

[0061] The upper and lower sides of the full-color OLED display device are respectively wrapped with a packaging member 1, and the packaging member 1 is composed of a hot melt sealing end 101, a hot melt member 102, a second packaging layer 104, a third packaging layer 105, a full-color OLED display member 106 and a first packaging layer 107.

[0062] The package 1 is composed of a first package layer 107, a second package layer 104 and a third package layer 105. The first package layer 107, the second package layer 104 and the third package layer 105 are provided with a hot melt sealing end 101 extending from the outer ends thereof. A hot melt component 102 is provided on the hot melt sealing end 101. A full-color OLED display component 106 is wrapped in the package 1.

[0063] The hot melt member 102 is a hot melt structure, which can penetrate the hot melt sealing end 101 to achieve a thickness of

[0064] The first packaging layer 107, the second packaging layer 104 and the third packaging layer 105 on the packaging member 1 are respectively connected with a one-way valve 201, an exhaust hole 202, a splicing piece 1 203, a splicing piece 204, a clamping piece 205, a splicing hole 206, a splicing plug 207 and a clamping plate 208;

[0065] An air guide 2 is installed on the first packaging layer 107, a one-way valve 201 is installed in the air guide 2, and a clamping plate 208 is installed below the one-way valve 201;

[0066] A splicing piece 203 is mounted on the second packaging layer 104, a clamping piece 205 is mounted on the splicing piece 203, and a splicing hole 206 is opened on the clamping piece 205;

[0067] A splicing plug 207 is installed around the second splicing piece 204 .

[0068] The engaging member 205 is inserted into the engaging plate 208 at the bottom of the air guide member 2, and the splicing plug 207 is inserted into the splicing hole 206 on the engaging member 205 for quick splicing connection.

[0069] like Figure 1 - Fig. 9 As shown, the working process of a full-color OLED display device provided in this embodiment is as follows:

[0070] 1. SiNx310 and SiO320 are deposited successively on a silicon-based backplane with an anode structure, and the deposition method can be ALD and PECVD;

[0071] 2. The pixel isolation structure is made by photolithography → dry etching → desizing process. The etching selectivity of SiNx310 and SiO320 is different, and then the undercut structure is formed by dry etching. The undercut structure can pull the evaporated OLED film layer down to the inside of the undercut, reducing the contact area between the OLED film layer and the metal base.

[0072] 3. After forming the pixel isolation structure, a metal overlap structure 400 buffer layer 410 / transition layer 420 / metal II 430 / shielding structure 440 is deposited, wherein the buffer layer 410 / transition layer 420 / metal II 430 is deposited by PVD, and the shielding structure 440 is deposited by CVD;

[0073] 4. Use photolithography → dry etching → descaling process to remove the material shielding structure 440 in the area above the pixel, and the etching end point stops at metal 2 430;

[0074] 5. At this time, the shielding structure 440 is used as a hard mask layer of the metal overlap structure. The wet etching process etchant can be selected from hot hydrochloric acid; dilute hydrofluoric acid or hydrofluoric acid / H2O2; high temperature and high concentration SC1NH4OH / H2O2 / H2O mixed solution and SPMH2SO4 / H2O2 / H2O mixed solution to etch and remove the material buffer layer 410 / transition layer 420 / metal 2 430 in the pixel area to produce a metal isolation structure; it is particularly important to emphasize that: due to the isotropic characteristics of wet etching, the lateral etching rate of the upper metal is fast, and the lateral etching rate of the lower metal is slow, so that a spindle-shaped structure with a narrow top and a wide bottom can be formed;

[0075] 6. After forming the metal lapped structure, the red OLED 510, cathode layer 600, first encapsulation layer 710 and second encapsulation layer 720 are deposited. The deposition methods are evaporation, Low Damage Sputter, ALD and CVD.

[0076] 7. Remove the red OLED 510, the cathode layer 600, the first encapsulation layer 710 and the second encapsulation layer 720 from the area other than the first sub-pixel by using a photolithography → etching → degumming process. The etching process may be dry etching, wet etching or a combination of the two.

[0077] 8. Repeat 6 and 7 to deposit the green OLED 520, the cathode layer 600, the first encapsulation layer 710 and the second encapsulation layer 720, and use the photolithography → etching → degumming process to remove the green OLED 520, the cathode layer 600, the first encapsulation layer 710 and the second encapsulation layer 720 in the area other than above the second sub-pixel;

[0078] 9. Repeat 6 and 7 to deposit the blue OLED 530, the cathode layer 600, the first encapsulation layer 710 and the second encapsulation layer 720, and use the photolithography → etching → degumming process to remove the blue OLED 530, the cathode layer 600, the first encapsulation layer 710 and the second encapsulation layer 720 in the area other than the third sub-pixel;

[0079] 10. Place the full-color OLED display element 106 in the package 1 and seal it by hot melting. During the hot melting process of the package 1, the hot melting element 102 is hot melt sealed;

[0080] 11. During the process of sealing the full-color OLED display element 106 , the gas in the package 1 is discharged through the one-way valve 201 in the gas guide 2 to remove excess gas in the package 1 .

[0081] Example

[0082] like Figure 1 - Fig. 9 As shown,

[0083] 1- Silicon nitride and silicon oxide are deposited successively on a silicon-based backplane with an anode structure. The deposition method can be ALD and PECVD;

[0084] 2-Use photolithography → dry etching → desmearing process to produce pixel isolation structure. The etching selectivity of silicon nitride and silicon oxide is different. Then dry etching is used to form an undercut structure. The undercut structure can pull the evaporated OLED film layer down to the inside of the undercut, reducing the contact area between the OLED film layer and the metal base.

[0085] 3- After forming the pixel isolation structure, a metal overlap structure film layer is deposited (ITO / TiN / Ti / SiOx from bottom to top), where the ITO / TiN / Ti deposition method is PVD, and the SiOx deposition method is CVD;

[0086] 4-Use photolithography → dry etching → desmearing process to remove the material SiOx in the area above the pixel, and the etching end point stops at the metal Ti surface;

[0087] 5-At this time, SiOx is used as a hard mask layer of the metal overlap structure, and the material ITO / TiN / Ti in the pixel area is removed by wet etching process (the etching solution can be hot hydrochloric acid; dilute hydrofluoric acid or hydrofluoric acid / H2O2; high temperature and high concentration SC1NH4OH / H2O2 / H2O mixture) and SPMH2SO4 / H2O2 / H2O mixture) to produce a metal isolation structure; it is particularly important to emphasize that due to the isotropic characteristics of wet etching, the lateral etching rate of the metal in the upper part is fast, and the lateral etching rate of the metal in the lower part is slow, which can form a spindle-shaped structure that is narrow at the top and wide at the bottom;

[0088] 6- After forming the metal lapped structure, the red OLED layer is deposited, transparent oxide cathode IZO, Al2O3 and SiNx310, and the deposition methods are evaporation, Low Damage Sputter, ALD and CVD.

[0089] 7-Use photolithography → etching → stripping process to remove the materials in the area other than the first sub-pixel: red OLED510 layer, transparent oxide cathode IZO, Al2O3 and SiNx310. The etching process can be dry etching, wet etching or a combination of the two.

[0090] 8-Repeat 6 and 7 to deposit green OLED 520 layer, transparent oxide cathode IZO, Al2O3 and SiNx310, and remove the green OLED 520 layer, transparent oxide cathode IZO, Al2O3 and SiNx in the area other than above the second sub-pixel by photolithography → etching → stripping process;

[0091] 9-Repeat 6 and 7 to deposit blue OLED 530 layer, transparent oxide cathode IZO, Al2O3 and SiNx, and use photolithography → etching → stripping process to remove the blue OLED 530 layer, transparent oxide cathode IZO, Al2O3 and SiNx in the non-third sub-pixel area.

[0092] The above description is only a further embodiment of the present invention, but the protection scope of the present invention is not limited thereto. Any technician familiar with the technical field can make equivalent replacements or changes according to the technical solutions and concepts of the present invention within the scope disclosed by the present invention, which belong to the protection scope of the present invention.

Claims

1. A full-color OLED display device, characterized in that: The invention comprises a substrate (100) for padding, on which W-PIug (110), an LED light-emitting unit (200), a metal (210), a transparent conductive all-metal oxide (220), a pixel isolation structure (300), SiNx (310), SiOx (320), a metal lap structure (400), a buffer layer (410), a transition layer (420), a metal second (430), a shielding structure (440), an LED material layer (500), a red OLED (510), a green OLED (520), a blue OLED (530), a cathode layer (600), a thin film encapsulation layer (700), a first encapsulation layer (710) and a second encapsulation layer (720) are stacked and laid.

2. A full-color OLED display device according to claim 1, characterized in that: The substrate (100) is a silicon-based substrate, and the substrate (100) contains a CMOS circuit silicon substrate; W-PIug (110) is a metal connection layer between CMOS and OLED, and provides power to OLED.

3. A full-color OLED display device according to claim 2, characterized in that: The metal anode of the LED light-emitting unit (200) is integrated on a silicon-based substrate, the metal (210) is metal Al or Ag, and the transparent conductive all-metal oxide (220) is a transparent conductive metal oxide such as ITO, IZO, or IGZO.

4. A full-color OLED display device according to claim 3, characterized in that: The pixel isolation structure (300) is a pixel isolation structure, and the pixel isolation structure (300) is used to block the electrical influence between OLED sub-pixels. The buffer layer (410) on the metal overlap structure (400) is ITO, the transition layer (420) is one of TiN or TaN, the metal 2 (430) is one of Al, Ti, Mo, and W, and the shielding structure (440) is one of SiOx, SiNx, and SiOxNy.

5. A full-color OLED display device according to claim 4, characterized in that: The LED material layer (500) is an OLED functional material layer, which includes HIL, HTL, EBL, EML, HBL, ETL, EIL functional layers, which can be phosphorescent, fluorescent or highly fluorescent OLED materials; The cathode layer (600) is a single-layer film of Mg, Ag, Al, IZO, AZO or a multi-layer composite film composed of two or more of the above materials, and the thin film encapsulation layer (700) is a single-layer film of SiNx, SiOx, SiOxNy or a multi-layer composite film composed of two or more of the above materials.

6. A full-color OLED display device according to claim 5, characterized in that: The full-color OLED display device also includes its packaging structure; The full-color OLED display device is wrapped with a packaging component (1) on both the upper and lower sides, respectively. The packaging component (1) comprises a hot-melt sealing end (101), a hot-melt component (102), a second packaging layer (104), a third packaging layer (105), a full-color OLED display component (106) and a first packaging layer (107). The encapsulation component (1) is composed of three layers: a first encapsulation layer (107), a second encapsulation layer (104) and a third encapsulation layer (105); a hot-melt sealing end (101) is extended and installed at the outer ends of the first encapsulation layer (107), the second encapsulation layer (104) and the third encapsulation layer (105); a hot-melt sealing end (101) is distributed on the hot-melt sealing end (101); and a full-color OLED display component (106) is wrapped in the encapsulation component (1); The hot melt component (102) is a hot melt structure and can penetrate the hot melt sealing end (101) to achieve the functions of constant thickness and sealing.

7. A full-color OLED display device according to claim 6, characterized in that: A one-way valve (201), an exhaust hole (202), a first splicing piece (203), a second splicing piece (204), a clamping piece (205), a splicing hole (206), a splicing plug (207) and a clamping plate (208) are respectively mounted on the first packaging layer (107), the second packaging layer (104) and the third packaging layer (105) on the packaging piece (1); An air guide (2) is installed on the first packaging layer (107), a one-way valve (201) is installed in the air guide (2), and a clamping plate (208) is installed below the one-way valve (201); A splicing piece 1 (203) is installed on the second packaging layer (104), a clamping piece (205) is installed on the splicing piece 1 (203), and a splicing hole (206) is opened on the clamping piece (205); A splicing plug (207) is installed around the second splicing piece (204).

8. A full-color OLED display device according to claim 7, characterized in that: The engaging member (205) is inserted into a clamping plate (208) at the bottom of the air guide member (2), and the splicing plug (207) is inserted into a splicing hole (206) on the engaging member (205) for quick splicing connection.

9. The full-color OLED display device according to claim 1, characterized in that: The full-color OLED display device also includes the following manufacturing method: Step 1: SiNx310 and SiO320 are successively deposited on a silicon-based backplane with an anode structure, and the deposition method can be ALD and PECVD; Step 2: Use photolithography → dry etching → desizing process to make pixel isolation structure. SiNx310 and SiO320 have different etching selectivity ratios, and then dry etching is used to form an undercut structure. The undercut structure can pull the evaporated OLED film layer down to the inside of the undercut, reducing the contact area between the OLED film layer and the metal base. Step 3: After forming the pixel isolation structure, a metal bridging structure 400 (buffer layer 410 / transition layer 420 / metal II 430 / shielding structure 440) is deposited, wherein the buffer layer 410 / transition layer 420 / metal II 430 is deposited by PVD, and the shielding structure 440 is deposited by CVD; Step 4: Use photolithography → dry etching → stripping process to remove the material shielding structure 440 in the area above the pixel, and the etching end point stops at the metal 2 430; Step 5: At this time, the shielding structure 440 is used as a hard mask layer of the metal overlap structure, and a wet etching process (the etching solution can be hot hydrochloric acid; dilute hydrofluoric acid or hydrofluoric acid / H2O2; high temperature and high concentration SC1NH4OH / H2O2 / H2O mixed solution) and SPMH2SO4 / H2O2 / H2O mixed solution)) is used to etch and remove the material buffer layer 410 / transition layer 420 / metal 2 430 in the pixel area to produce a metal isolation structure; it is particularly important to emphasize that: due to the isotropic characteristics of wet etching, the lateral etching rate of the metal in the upper part is fast, and the lateral etching rate of the metal in the lower part is slow, so that a spindle-shaped structure with a narrow top and a wide bottom can be formed; Step 6: After forming the metal lap structure, the red OLED 510, cathode layer 600, first encapsulation layer 710 and second encapsulation layer 720 are deposited by evaporation, Low Damage Sputter, ALD and CVD. Step 7: Remove the red OLED 510, the cathode layer 600, the first encapsulation layer 710 and the second encapsulation layer 720 of the area other than the first sub-pixel by using a photolithography → etching → degumming process. The etching process may be dry etching, wet etching or a combination of the two. Step 8: Repeat 6 and 7 to deposit the green OLED 520, the cathode layer 600, the first encapsulation layer 710 and the second encapsulation layer 720, and use a photolithography → etching → degumming process to remove the green OLED 520, the cathode layer 600, the first encapsulation layer 710 and the second encapsulation layer 720 in the area other than above the second sub-pixel; Step 9: Repeat 6 and 7 to deposit the blue OLED 530, the cathode layer 600, the first encapsulation layer 710 and the second encapsulation layer 720, and use a photolithography → etching → degumming process to remove the blue OLED 530, the cathode layer 600, the first encapsulation layer 710 and the second encapsulation layer 720 in the area other than the third sub-pixel; Step 10: placing the full-color OLED display element (106) in the package (1) and sealing it by hot melting, and hot melting the hot melt element (102) during the hot melting process of the package (1); Step 11: During the process of sealing the full-color OLED display element (106), the gas in the package (1) is discharged through the one-way valve (201) in the gas guide element (2) to discharge the excess gas in the package (1).

Images