Display panel, preparation method thereof and display device

Abstract

The invention provides a display panel, a preparation method thereof and a display device. The display panel comprises a silicon substrate and a cover plate covering the silicon substrate, the silicon substrate comprises a bonding pad binding area, the display panel is provided with a first cutting edge, and the cover plate is provided with a second cutting edge; the first cutting edge is formed by penetrating through the cutting cover plate from the position, corresponding to the second cutting groove, of the second surface to the direction of the silicon substrate and penetrating through and cutting the silicon substrate from the position, corresponding to the second cutting groove, of the surface of the silicon substrate to the interior of the silicon substrate; the second cutting edge is formed by penetrating through the cutting cover plate from the position, corresponding to the first cutting groove, of the second surface to the direction of the silicon substrate. The display panel has a good display effect, the bad problems such as black screen are avoided, and the product yield and the product competitiveness of the display panel are improved.

Description

Technical Field

[0001] The present invention generally relates to the field of display technology, and in particular to a display panel and a manufacturing method thereof, and a display device. Background Art

[0002] The current silicon-based OLED display devices are used in AR / VR devices. Since users may appear in different environments, the reliability and life of OLED devices are very high. In the related art, OLED display modules are usually cut on the back of the wafer. After 90% of the cutting is completed, about 100um is reserved. By pressing the cracks, the silicon substrate is cracked by pressure, and irregular damage to the silicon substrate may occur. At the same time, the glass cover (CG) is cut by cracking, and the dummy cover glass (dummy CG) strip at the bonding pad position is at risk of damage, resulting in the cover glass (CG) corresponding to the display area (AA area) and the cover glass corresponding to the bonding pad area being bumped after cutting. The glass cover debris will scratch the lower silicon wafer and circuit, resulting in a black screen. Summary of the invention

[0003] In view of the above-mentioned defects or deficiencies in the prior art, it is desired to provide a display panel, a preparation method thereof, and a display device, by respectively cutting the cover plate and the silicon substrate to form a first cutting edge and a second cutting edge, which is beneficial to avoiding edge collapse or damage of the silicon substrate and the cover plate, thereby avoiding damage to structures such as circuits on the silicon substrate, and further beneficial to ensuring that the display panel has a good display effect, avoiding adverse problems such as black screen, and improving the product yield and product competitiveness of the display panel.

[0004] In a first aspect, the present invention provides a display panel, comprising a silicon substrate and a cover plate covered on the silicon substrate, wherein the silicon substrate comprises a binding pad area, the display panel has a first cutting edge, the cover plate has a second cutting edge, the second cutting edge is indented relative to the first cutting edge to expose the binding pad area, and the cover plate has a first surface and a second surface arranged opposite to each other;

[0005] The first cutting edge is formed by cutting the cover plate from the position of the second surface corresponding to the second cutting groove toward the silicon substrate and cutting the silicon substrate from the position of the surface of the silicon substrate corresponding to the second cutting groove toward the inside of the silicon substrate;

[0006] The second cutting edge is formed by penetrating the cutting cover plate from the position of the second surface corresponding to the first cutting groove toward the direction of the silicon substrate, wherein the first cutting groove and the second cutting groove are arranged on the first surface at intervals, the first cutting groove is located in the area of ​​the first surface corresponding to the binding pad area, and the position of the second cutting groove corresponds to the preset cutting path.

[0007] As an optional solution, the distance between the first cutting edge and the second cutting edge is 1.0 mm-1.5 mm.

[0008] As an optional solution, the first cutting edge forms a first chamfer on a surface of the silicon substrate facing away from the cover plate.

[0009] As an optional solution, the first cutting edge forms a second chamfer on the second surface of the cover plate.

[0010] In a second aspect, the present invention provides a method for manufacturing a display panel, the display panel comprising a silicon substrate and a cover plate, the silicon substrate comprising a binding pad area, the cover plate having a first surface and a second surface arranged opposite to each other; the manufacturing method comprises the following steps:

[0011] A first cutting groove and a second cutting groove are provided on the first surface of the cover plate, the first cutting groove and the second cutting groove respectively extend inward from the first surface and do not penetrate the cover plate, the first cutting groove is located in an area of ​​the cover plate corresponding to the binding pad area, and the position of the second cutting groove corresponds to the preset cutting path;

[0012] A third cutting groove is formed on the silicon substrate and a fourth cutting groove is formed at a position on the second surface corresponding to the second cutting groove, so as to form a first cutting edge; wherein the position of the third cutting groove corresponds to the position of the second cutting groove, and the third cutting groove extends from the surface of the silicon substrate toward the inside; and the fourth cutting groove extends from the second surface toward the silicon substrate;

[0013] A fifth cutting groove is formed at a position of the second surface corresponding to the first cutting groove, and the fifth cutting groove extends inwardly to communicate with the first cutting groove to form a second cutting edge;

[0014] The area of ​​the cover plate between the first cutting edge and the second cutting edge is removed to expose the bonding pad area.

[0015] As an optional solution, the third cutting groove includes a first sub-cutting groove, and the third cutting groove is opened on the surface of the silicon substrate away from the cover plate and the fourth cutting groove is opened at a position of the second surface corresponding to the second cutting groove, including:

[0016] A first sub-cutting groove is formed on the surface of the silicon substrate away from the cover plate, wherein the first sub-cutting groove extends from the surface of the silicon substrate away from the cover plate toward the cover plate and does not penetrate the silicon substrate;

[0017] A fourth cutting groove is formed at a position of the second surface corresponding to the second cutting groove. The fourth cutting groove passes through the cover plate toward the silicon substrate to the inside of the silicon substrate and communicates with the first sub-cutting groove.

[0018] As an optional solution, the first sub-cutting groove includes a first part and a second part, and the first sub-cutting groove is opened on the surface of the silicon substrate away from the cover plate, including:

[0019] A first portion is formed by extending inwardly from a surface of the silicon substrate away from the cover plate, the first portion comprising a groove bottom and two opposite side surfaces inclined in different directions, and the first portion is configured as a first chamfer of a first cutting edge;

[0020] A second portion is formed in the silicon substrate. The second portion extends inward from the groove bottom of the first portion and does not penetrate the silicon substrate to form a first sub-cutting groove.

[0021] As an optional solution, the angle between two opposite side surfaces of the first part ranges from 85° to 95°.

[0022] As an optional solution, a size of the first portion in its extending direction is 0.14 times to 0.19 times the thickness of the silicon substrate.

[0023] As an optional solution, the dimension of the first sub-cut groove in its extending direction is 0.9 times to 0.96 times the thickness of the silicon substrate.

[0024] As an optional solution, the third cutting groove includes a first sub-cutting groove and a second sub-cutting groove, and the third cutting groove is respectively opened on the surface of the silicon substrate away from the cover plate and the fourth cutting groove is opened at a position on the second surface corresponding to the second cutting groove, including:

[0025] A first sub-cutting groove is formed on the surface of the silicon substrate away from the cover plate, wherein the first sub-cutting groove extends from the surface of the silicon substrate away from the cover plate toward the cover plate and does not penetrate the silicon substrate;

[0026] A fourth cutting groove is formed at a position of the second surface corresponding to the second cutting groove, and the fourth cutting groove extends toward the silicon substrate and communicates with the second cutting groove, so that the silicon substrate is exposed in the fourth cutting groove;

[0027] A second sub-cut groove is formed on the silicon substrate. The second sub-cut groove extends inward from the surface of the silicon substrate exposed at the fourth cut groove to communicate with the first sub-cut groove.

[0028] As an optional solution, the fourth cutting groove includes a first area and a second area, and the fourth cutting groove is opened at a position of the second surface corresponding to the second cutting groove, including:

[0029] A first area is formed by extending inwardly on the second surface, the first area having a groove bottom and two side surfaces inclined in different directions and arranged opposite to each other, and the first area is configured as a chamfer of the fourth cutting groove;

[0030] A second area is formed on the cover plate, the second area extending inward from the groove bottom of the first area to communicate with the second cutting groove to form a fourth cutting groove;

[0031] As an optional solution, the angle between two opposite side surfaces of the first area ranges from 85° to 95°.

[0032] As an optional solution, a size of the first region in its extension direction is 0.15 times to 0.21 times the thickness of the cover plate.

[0033] As an optional solution, removing the area between the first cutting edge and the second cutting edge on the cover plate includes:

[0034] Adhere the carrier film to the cover plate, so that the area between the first cutting edge and the second cutting edge of the cover plate is bonded and fixed to the carrier film;

[0035] The carrier film is removed so that the area on the cover plate between the first cutting edge and the second cutting edge is removed together with the carrier film.

[0036] As an optional solution, in the process of forming the first cutting groove and the second cutting groove in a spaced relationship on the first surface of the cover plate, the spacing between the first cutting groove and the second cutting groove is 1.0 mm-1.5 mm.

[0037] As an optional solution, in the process of forming the first cutting groove and the second cutting groove in the first surface of the cover plate, the size of each of the first cutting groove and the second cutting groove in the extension direction is 0.08 times to 0.14 times the thickness of the cover plate.

[0038] A third aspect: The present invention provides a display device, comprising the display panel of the first aspect or the display panel prepared according to the preparation method of the second aspect.

[0039] The display panel of the present invention forms a first cutting edge of the display panel by cutting the cover plate from a position on the second surface of the cover plate corresponding to the second cutting groove toward the direction of the silicon substrate and cutting the silicon substrate from a position on the surface of the silicon substrate corresponding to the second cutting groove toward the inside of the silicon substrate, and forms a second cutting edge of the cover plate by cutting the cover plate from a position on the second surface corresponding to the first cutting groove toward the direction of the silicon substrate, so that the binding pad area is exposed; this helps to avoid chipping or damage of the silicon substrate and the cover plate, thereby avoiding damage to structures such as circuits on the silicon substrate, and further helps to ensure that the display panel has a good display effect, avoid adverse problems such as black screens, and improve the product yield and product competitiveness of the display panel. BRIEF DESCRIPTION OF THE DRAWINGS

[0040] Other features, objects and advantages of the present application will become more apparent by reading the detailed description of non-limiting embodiments made with reference to the following drawings:

[0041] Figure 1 A schematic diagram of cutting a display panel in the prior art;

[0042] Figure 2 It is a cross-sectional schematic diagram of a display panel in the prior art;

[0043] Figure 3 It is a schematic diagram of a method for preparing a display panel in the prior art;

[0044] Figure 4 A schematic diagram of the structure of a display panel according to an embodiment of the present application;

[0045] Figure 5 A schematic diagram of the front structure of a display panel according to an embodiment of the present application;

[0046] Figure 6 is a schematic cross-sectional structure diagram of a display panel according to an embodiment of the present application;

[0047] Figure 7 A schematic structural diagram of a method for manufacturing a display panel according to an embodiment of the present application;

[0048] Figure 8 A schematic diagram of a structure in which a cover plate and a carrier film are fixed in a method for preparing a display panel according to an embodiment of the present application;

[0049] Fig. 9 It is a structural schematic diagram of a first cutting groove and a second cutting groove formed on a cover plate in a method for preparing a display panel according to an embodiment of the present application;

[0050] Fig.10 This is a schematic structural diagram of the bonding of a cover plate and a silicon substrate in a method for preparing a display panel according to an embodiment of the present application;

[0051] Fig.11 This is a schematic structural diagram of a cover plate and a silicon substrate being fixed on a carrier film in a method for preparing a display panel according to an embodiment of the present application;

[0052] Fig.12 A schematic structural diagram of a first portion of a first sub-cutting groove on a silicon substrate in a method for manufacturing a display panel according to an embodiment of the present application;

[0053] Fig.13 A schematic diagram of the structure of a first sub-cutting groove on a silicon substrate in a method for manufacturing a display panel according to an embodiment of the present application;

[0054] Fig.14 A schematic diagram of the first region structure of a fourth cutting groove on a cover plate in a method for manufacturing a display panel according to an embodiment of the present application;

[0055] Fig.15 This is a schematic diagram of the structure of a fourth cutting groove on a cover plate in a method for preparing a display panel according to an embodiment of the present application;

[0056] Fig.16 This is a schematic diagram of the structure of the fifth cutting groove on the cover plate in the method for preparing the display panel of an embodiment of the present application;

[0057] Fig.17It is a schematic diagram of the structure in which the cover plate and the carrier film are fixed after cutting in the method for preparing the display panel of an embodiment of the present application.

[0058] In the figure,

[0059] 1. incision, 2. crack;

[0060] B1, first cutting edge, B2, second cutting edge;

[0061] 10. Silicon substrate, 11. Display layer, 111. First electrode, 112. Light-emitting layer, 113. Second electrode, 12. Encapsulation layer, 121. First inorganic encapsulation layer, 122. Second inorganic encapsulation layer, 13. Color film layer, 14. Third cutting groove, 141. First sub-cutting groove, 1411. First part, 1412. Second part, 142. Second sub-cutting groove

[0062] 20. cover plate, 21. first cutting groove, 22. second cutting groove, 23. fourth cutting groove, 231. first area, 232. second area, 24. fifth cutting groove;

[0063] 30. Carrier film, 40. Flexible circuit board. DETAILED DESCRIPTION

[0064] The present application is further described in detail below in conjunction with the accompanying drawings and embodiments. It is to be understood that the specific embodiments described herein are only used to explain the relevant invention, rather than to limit the invention. It is also necessary to explain that, for ease of description, only the parts related to the invention are shown in the accompanying drawings.

[0065] It should be noted that, in the absence of conflict, the embodiments and features in the embodiments of the present application can be combined with each other. The present application will be described in detail below with reference to the accompanying drawings and in combination with the embodiments.

[0066] In the related art, during the manufacturing process of OLED display panel, such as Figure 1-3As shown in the figure, after the cover plate and the silicon substrate are bonded together, the back of the silicon substrate 10 (back plate) or wafer is usually cut. After the back of the silicon substrate 10 is cut to about 90%, a partial area (about 100 μm) is reserved, and a pressure F is applied to the silicon substrate 10 so that the silicon substrate 10 is cracked from the cut 1. This method may cause irregular damage to the silicon substrate 10. For the cutting of the cover plate 20, a cutting path (a shallow scratch formed by a cutter, not shown in the figure) is usually formed on the cover plate 20 in advance, and then the cover plate 20 is cut. Pressure F is applied to the cover plate 20, so that the cover plate 20 is split from the cutting path to produce cracks 2. Since at least two cutting paths are formed on the cover plate 20, when pressure is applied to the cover plate 20, the area of ​​the cover plate 20 corresponding to the binding pad area of ​​the silicon substrate 10 is prone to damage due to pressure, and the cover plate 20 located in the display area (AA) and the cover plate 20 located in the binding pad area after cutting are bumped, which can easily damage the structure of the binding pad area and other circuit structures on the silicon substrate 10, thereby causing adverse problems such as a black screen.

[0067] Based on the above problems, an embodiment of the present application provides a display panel, such as Figure 4-7 As shown, it includes a silicon substrate 10 and a cover plate 20 covered on the silicon substrate 10, the silicon substrate 10 includes a binding pad area, the display panel has a first cutting edge A1, the cover plate 20 has a second cutting edge A2, the second cutting edge A2 is retracted relative to the first cutting edge A1 to expose the binding pad area, and the cover plate 20 has a first surface and a second surface arranged oppositely;

[0068] The first cutting edge A1 is formed by cutting the cover plate 20 from the position of the second surface corresponding to the second cutting groove 22 toward the silicon substrate 10 and cutting the silicon substrate 10 from the position of the surface of the silicon substrate 10 corresponding to the second cutting groove 22 toward the inside of the silicon substrate 10;

[0069] The second cutting edge A2 is formed by penetrating the cutting cover plate 20 from the position of the second surface corresponding to the first cutting groove 21 toward the silicon substrate 10, wherein the first cutting groove 21 and the second cutting groove 22 are arranged at intervals on the first surface, the first cutting groove 21 is located in the area of ​​the first surface corresponding to the binding pad area, and the position of the second cutting groove 22 corresponds to the preset cutting path.

[0070] It should be noted that the silicon substrate 10 in this embodiment can be understood as the backplane of the display panel, and the cover plate 20 is covered on the silicon substrate 10, and is mainly used for the structure on the user silicon substrate 10. Among them, the silicon substrate 10 may include a silicon substrate, and a driving layer, a display layer 11 and a touch layer stacked on the silicon substrate in a direction away from the silicon substrate, and the cover plate 20 may be, but is not limited to, glass. In some embodiments, the cover plate 20 is slightly smaller than the silicon substrate 10, and a certain distance is left around it, which is conducive to ensuring the light transmission while facilitating the positioning and fixing of the display panel.

[0071] Among them, the driving layer may include a plurality of pixel driving circuits distributed in an array. The pixel driving circuit may include a plurality of electronic components such as transistors and capacitors. For example, each pixel driving circuit may include three transistors and one capacitor, forming a 3T1C (i.e., a driving transistor, two switching transistors and one capacitor). It may also include more than three transistors and at least one capacitor, such as a 4T1C (i.e., a driving transistor, three switching transistors and one capacitor), a 5T1C (i.e., a driving transistor, four switching transistors and one capacitor) or a 7T1C (i.e., a driving transistor, six switching transistors and one capacitor), etc. Among them, the transistor may be a thin film transistor (Thin Film Transistor, referred to as TFT).

[0072] It can be understood that the thin film transistor may include a control electrode, a first electrode and a second electrode, wherein the control electrode is the gate electrode of the thin film transistor, the first electrode is one of the source electrode and the drain electrode of the thin film transistor, and the second electrode is the other of the source electrode and the drain electrode of the thin film transistor.

[0073] In some embodiments, the driving layer may include an active layer, a first gate metal layer (Gate1), a second gate metal layer (Gate2), a first metal wiring layer (SD1), and a second metal wiring layer (SD2), and these film layers are configured to form thin film transistors, capacitors, and a plurality of signal lines for pixel driving in a pixel driving circuit. For example, the plurality of signal lines may include: a power signal line, a data signal line, a reset signal line, a scan signal line, an enable signal line, and an initialization signal line. The driving layer may also include an insulating layer separating these film layers.

[0074] The display layer 11 may include: a light-emitting device layer and an encapsulation layer 12. The light-emitting device layer is stacked on the side of the driving layer away from the silicon substrate. The light-emitting device layer may include: a pixel defining layer and a plurality of light-emitting devices. The pixel defining layer has a plurality of pixel openings, and one pixel opening defines the position of one light-emitting device. For example, the light-emitting device may be an OLED light-emitting device or a QLED light-emitting device. Taking the OLED light-emitting device as an example, in the direction away from the substrate, the light-emitting device may include a first electrode 111, a light-emitting layer 112, and a second electrode 113 stacked in sequence. Of course, the light-emitting device may also include at least one of a hole injection layer, a hole transport layer, and an electron blocking layer disposed between the first electrode 111 and the light-emitting layer 112, and at least one of an electron injection layer, an electron transport layer, and a hole blocking layer disposed between the second electrode 113 and the light-emitting layer 112; in some embodiments, the first electrode 111 may be an anode, and the second electrode 113 may be a cathode. Among them, the structure of the anode may be a composite structure composed of a transparent conductive oxide film / metal film / transparent conductive oxide film stacked in sequence. Among them, the material of the above-mentioned transparent conductive oxide film is, for example, any one of ITO (Indium tin oxide) and IZO (Indium zinc oxide), and the material of the above-mentioned metal film is, for example, any one of gold (Au), silver (Ag), nickel (Ni) and platinum (Pt). For another example, the structure of the anode can also be a single-layer structure, and the material of the single-layer structure can be any one of ITO, IZO, Au, Ag, Ni, and Pt. Each pixel opening exposes a portion of the anode of the corresponding light-emitting device, and at least a portion of the light-emitting layer 112 is located in the corresponding pixel opening and is electrically connected to the corresponding anode. For example, the cathodes of each light-emitting device can be electrically connected to each other to form an integrated structure. For example, the material of the cathode can be any one of aluminum (Al), silver (Ag) and magnesium (Mg), or any one of a magnesium-silver alloy and an aluminum-lithium alloy.

[0075] The encapsulation layer 12 is arranged on the side of the light-emitting device layer away from the substrate to protect the light-emitting device. The encapsulation layer 12 may include a first inorganic encapsulation layer 121, an organic encapsulation layer 12 and a second inorganic encapsulation layer 122. For example, the first inorganic encapsulation layer 121 and the second inorganic encapsulation layer 122 may be made of inorganic materials such as nitrides, oxides, nitrogen oxides, nitrates, carbides or any combination thereof, and the preparation process may be a chemical vapor deposition (CVD) process, such as a plasma enhanced chemical vapor deposition (PECVD) process. For example, the organic insulating layer may be made of materials such as acrylic, hexamethyldisiloxane, polyacrylates, polycarbonates, polystyrene, etc., and the preparation process may be an inkjet printing (IJP) process.

[0076] In some embodiments, the display layer 11 further includes a color filter layer 13, and the color filter layer 13 is disposed on a side of the encapsulation layer 12 away from the silicon substrate. The color filter layer 13 may include a first color filter unit, a second color filter unit, and a third color filter unit. The first color filter unit, the second color filter unit, and the third color filter unit are color filter units of different colors. The first color filter unit, the second color filter unit, and the third color filter unit may have different thicknesses or the same thickness, or two of them may have the same thickness and the other may have a different thickness;

[0077] In some other embodiments, adjacent color filter units of the color film layer 13 do not overlap each other, and the color film layer 13 also includes a black matrix arranged between adjacent color filter units to absorb ambient light, reduce ambient light reflection of the display panel, and realize that the screen is dark when it is turned off. Of course, in other embodiments, the first color filter unit and the second color filter unit may have a first overlapping area, the second color filter unit and the third color filter unit may have a second overlapping area, and the third color filter unit and the first color filter unit may have a third overlapping area. When two filter units of different colors overlap, the light transmittance of the overlapping area is low, so it can be used as a black matrix, so that the first overlapping area, the second overlapping area, and the third overlapping area of ​​the display panel can all be used as a black matrix to achieve a light shielding effect without the need to set up an additional black matrix.

[0078] The touch layer is used to realize the touch function. The touch layer can be arranged between the encapsulation layer 12 and the color filter layer 13 to realize the touch structure in the screen, which is conducive to reducing the thickness of the display panel. Of course, in other embodiments, the touch layer can also be arranged at other positions of the display panel, and the embodiments of the present application are not limited to this.

[0079] It can be understood that the silicon substrate 10 has a display area and a peripheral area located around the display area. The display area is used for luminous display, and the peripheral edge includes a binding pad area and other areas. The binding pad area can be but is not limited to being used to bind with the FPC (flexible circuit board 40) to achieve electrical connection, thereby realizing the transmission of external signals. The flexible circuit board can be used to provide electrical signals to drive the pixel circuit to work and drive the display; other areas of the peripheral area can also be used to install other structures according to actual product requirements.

[0080] It can also be understood that the display panel has a first cutting edge A1, which is generated after cutting the silicon substrate 10 and the cover plate 20. In this embodiment, the first cutting edge A1 is formed by cutting the cover plate 20 from the position of the second surface corresponding to the second cutting groove 22 toward the silicon substrate 10 and cutting the silicon substrate 10 from the position of the surface of the silicon substrate 10 corresponding to the second cutting groove 22 toward the inside of the silicon substrate 10. The first cutting edge A1 is relatively regular and flat, without burrs and other defects. This avoids the problem of damage to the binding pads and circuits on the silicon substrate 10 caused by defects such as chipping and breakage of the silicon substrate 10 and the cover plate 20, and is conducive to facilitating subsequent processing of the silicon substrate 10.

[0081] The cover plate 20 has a second cutting edge A2, which is formed by cutting the cover plate 20 in the direction of the silicon substrate 10 at the position of the second surface corresponding to the first cutting groove 21, that is, the second cutting edge A2 is only formed on the cover plate 20, and the second cutting edge A2 is mainly used to separate the area of ​​the cover plate 20 corresponding to the binding pad area from the area of ​​the cover plate 20 corresponding to the display area, so as to facilitate the exposure of the binding pad and realize the binding of the silicon substrate 10 and the flexible circuit board. The second cutting edge A2 formed in this embodiment is relatively regular and flat, without burrs and other undesirable problems, so as to avoid the collapse of the cover plate 20 to damage the binding pad or the area of ​​the cover plate 20 corresponding to the display area.

[0082] The display panel of the embodiment of the present application solves the problem of black screen and poor yield rate of the display panel in the related art. The display panel of the embodiment of the present application forms the first cutting edge A1 of the display panel by cutting the cover plate 20 from the position of the second surface of the cover plate 20 corresponding to the second cutting groove 22 toward the direction of the silicon substrate 10 and cutting the silicon substrate 10 from the position of the surface of the silicon substrate 10 corresponding to the second cutting groove 22 toward the inside of the silicon substrate 10, and forms the second cutting edge A2 of the cover plate 20 by cutting the cover plate 20 from the position of the second surface corresponding to the first cutting groove 21 toward the direction of the silicon substrate 10, so that the binding pad area is exposed; in this way, it is helpful to avoid the collapse or damage of the silicon substrate 10 and the cover plate 20, thereby avoiding damage to the circuit and other structures on the silicon substrate 10, and then it is helpful to ensure that the display panel has a good display effect, avoid bad problems such as black screen, and improve the product yield and product competitiveness of the display panel.

[0083] In some embodiments, the distance d between the first cutting edge A1 and the second cutting edge A2 is 1.0 mm-1.5 mm.

[0084] The distance d between the first cutting edge A1 and the second cutting edge A2 refers to the distance d between the first cutting edge A1 and the second cutting edge A2 in the direction parallel to the silicon substrate 10 (eg Figure 7 The distance between the first cutting edge A1 and the second cutting edge A2 (in the X direction).

[0085] Specifically, the distance between the first cutting edge A1 and the second cutting edge A2 may be, but is not limited to, 1.0 mm, 1.1 mm, 1.2 mm, 1.3 mm, 1.4 mm, 1.5 mm, etc.

[0086] In this embodiment, the distance between the first cutting edge A1 and the second cutting edge A2 is conducive to completely exposing the bonding pad, and conveniently setting the boundary area of ​​the silicon substrate 10 .

[0087] As an implementable manner, the first cutting edge A1 forms a first chamfer on the surface of the silicon substrate 10 facing away from the cover plate 20 .

[0088] The first chamfer may be, but is not limited to, a round chamfer or a straight chamfer.

[0089] In this embodiment, the first chamfer of the first cutting edge A1 helps to ensure that the silicon substrate 10 is not damaged during the cutting process, thereby facilitating the structural integrity of the silicon substrate 10 and facilitating subsequent processes.

[0090] As an implementable manner, the first cutting edge A1 is formed with a second chamfer on the second surface of the cover plate 20 .

[0091] The second chamfer may be, but is not limited to, a round chamfer or a straight chamfer.

[0092] In this embodiment, the second chamfer of the first cutting edge A1 helps to ensure that the cover plate 20 does not break during the cutting process, thereby ensuring the structure of the cover plate 20, protecting the binding pads or circuits on the silicon substrate 10, and facilitating subsequent processes.

[0093] In a preferred embodiment, the first cutting edge A1 forms a first chamfer on the surface of the silicon substrate 10 facing away from the cover plate 20 and forms a second chamfer on the second surface of the cover plate 20 .

[0094] As an implementable manner, the second cutting edge A2 may also be formed with a chamfer on the first surface and / or the second surface of the cover plate 20 .

[0095] This implementation is beneficial to further improving the yield rate and product competitiveness of the display panel.

[0096] In a second aspect, an embodiment of the present application provides a method for manufacturing a display panel, wherein the display panel includes a silicon substrate 10 and a cover plate 20, wherein the silicon substrate 10 includes a bonding pad area, and the cover plate 20 has a first surface and a second surface that are oppositely disposed; Figure 7 As shown, the preparation method comprises the following steps:

[0097] Step S10, a first cutting groove 21 and a second cutting groove 22 are formed on the first surface of the cover plate 20, the first cutting groove 21 and the second cutting groove 22 respectively extend inward from the first surface and do not penetrate the cover plate 20, the first cutting groove 21 is located in an area of ​​the cover plate 20 corresponding to the binding pad area, and the position of the second cutting groove 22 corresponds to a preset cutting path;

[0098] The preset cutting path refers to the position where the silicon substrate 10 and the cover plate 20 need to be cut, which is determined in advance according to actual processing requirements; the preset cutting path in this embodiment can be virtual, and of course can also be a shallow scratch or mark formed on the cover plate 20.

[0099] The first cutting groove 21 is located in the area of ​​the cover plate 20 corresponding to the binding pad area, which is conducive to exposing the binding pad area after the cover plate 20 is cut at the positions of the first cutting groove 21 and the second cutting groove 22;

[0100] The first cutting groove 21 and the second cutting groove 22 are arranged at intervals, which is conducive to forming a second cutting edge A2 that is retracted relative to the first cutting edge A1 in a direction parallel to the silicon substrate 10;

[0101] Step S20, respectively opening a third cutting groove 14 on the silicon substrate 10 and opening a fourth cutting groove 23 at a position on the second surface corresponding to the second cutting groove 22, so as to form a first cutting edge A1; wherein the position of the third cutting groove 14 corresponds to the position of the second cutting groove 22, and the third cutting groove 14 extends from the surface of the silicon substrate 10 toward the inside; and the fourth cutting groove 23 extends from the second surface toward the direction of the silicon substrate 10;

[0102] Among them, a third cutting groove 14 is opened on the silicon substrate 10, and the third cutting groove 14 can directly penetrate the silicon substrate 10; of course, the third cutting groove 14 can also extend only to a certain area inside the silicon substrate 10, by opening a fourth cutting groove 23 on the second surface of the cover plate 20, the fourth cutting groove 23 penetrates the cover plate 20 and extends to the inside of the silicon substrate 10, so that the third cutting groove 14 is connected with the fourth cutting groove 23, and the third cutting groove 14 penetrates the silicon substrate 10; of course, a partial area of ​​the third cutting groove 14 extends from the surface of the silicon substrate 10 away from the cover plate 20 to the inside of the silicon substrate 10 to a certain area without penetrating the silicon substrate 10, and the remaining area of ​​the third cutting groove 14 extends from the surface of the silicon substrate 10 facing the cover plate 20 to the inside of the silicon substrate 10 to be connected with the above-mentioned partial area of ​​the third cutting groove 14, so that the third cutting groove 14 penetrates the silicon substrate 10, which is determined according to the actual processing technology.

[0103] Step S30, opening a fifth cutting groove 24 at a position of the second surface corresponding to the first cutting groove 21, wherein the fifth cutting groove 24 extends inwardly to communicate with the first cutting groove 21 to form a second cutting edge A2;

[0104] The fifth cutting groove 24 is connected to the first cutting groove 21 to achieve penetrating cutting of the cover plate 20 , which is beneficial to forming the second cutting edge A2 .

[0105] Step S40 , removing the area between the first cutting edge A1 and the second cutting edge A2 on the cover plate 20 to expose the binding pad area.

[0106] The removal method may include but is not limited to grabbing by a robot arm, gluing, or adsorption by a suction cup.

[0107] It should be noted that, in the embodiment of the present application, the extending direction of the first cutting groove 21, the second cutting groove 22, the third cutting groove 14, the fourth cutting groove 23 and the fifth cutting groove 24 may be perpendicular to the direction of the silicon substrate 10 (eg Figure 7 This is conducive to convenient processing and subsequent processing procedures.

[0108] The method for preparing a display panel of the embodiment of the present application solves the problem that the existing method of cutting the cover plate 20 and the silicon substrate 10 by splitting easily causes damage to the silicon substrate 10 and the cover plate 20, resulting in poor display such as a black screen on the display panel. The method for preparing a display panel of the embodiment of the present application is to open a first cutting groove 21 and a second cutting groove 22 on the first surface of the cover plate 20; open a third cutting groove 14 on the silicon substrate 10 and a fourth cutting groove 23 at a position corresponding to the second cutting groove 22 on the second surface to form a first cutting edge A1; open a fifth cutting groove 24 at a position corresponding to the first cutting groove 21 on the second surface, and the fifth cutting groove 24 extends inward to communicate with the first cutting groove 21 to form a second cutting edge A2; remove the area between the first cutting edge A1 and the second cutting edge A2 on the cover plate 20 to expose the binding pad area. In this way, the first cutting groove 21 and the second cutting groove 22 are opened on the cover plate 20, so that there is a gap between the area corresponding to the binding pad area and the area corresponding to the display area on the cover plate 20, which is beneficial to avoid the cover plate 20 from being bumped and damaged, thereby avoiding damage to the circuit and other structures on the silicon substrate 10, and further beneficial to ensure that the display panel has a good display effect and avoids problems such as black screen; and the first cutting edge A1 and the second cutting edge A2 formed by the method of the embodiment of the present application are regular and flush, which is beneficial to facilitate subsequent processing, improve production and processing efficiency, and further improve the product yield and product competitiveness of the display panel.

[0109] As an achievable manner, the third cutting groove 14 includes a first sub-cutting groove 141, and step S20, respectively opening the third cutting groove 14 on the surface of the silicon substrate 10 away from the cover plate 20 and opening the fourth cutting groove 23 at a position of the second surface corresponding to the second cutting groove 22, comprises:

[0110] A first sub-cut groove 141 is formed on the surface of the silicon substrate 10 away from the cover plate 20. The first sub-cut groove 141 extends from the surface of the silicon substrate 10 away from the cover plate 20 toward the cover plate 20 and does not penetrate the silicon substrate 10.

[0111] A fourth cutting groove 23 is formed at a position of the second surface corresponding to the second cutting groove 22 . The fourth cutting groove 23 passes through the cover plate 20 toward the silicon substrate 10 to the inside of the silicon substrate 10 and communicates with the first sub-cutting groove 141 .

[0112] In the present embodiment, the silicon substrate 10 is cut to form a first sub-cutting groove 141, so that the first sub-cutting groove 141 does not penetrate the silicon substrate 10, and the second surface of the cover plate 20 is cut to form a fourth cutting groove 23, so that the fourth cutting groove 23 penetrates the area on the cover plate 20 and the silicon substrate 10 corresponding to the position of the first sub-cutting groove 141 at one time, thereby realizing the connection between the fourth cutting groove 23 and the first cutting groove 21, thereby penetrating the silicon substrate 10, which is simple to operate and is conducive to improving processing efficiency.

[0113] In a preferred embodiment, the first sub-cutting groove 141 includes a first portion 1411 and a second portion 1412. The first sub-cutting groove 141 is opened on the surface of the silicon substrate 10 away from the cover plate 20, including:

[0114] A first portion 1411 is formed on the silicon substrate 10 and extends inwardly from the surface away from the cover plate 20. The first portion 1411 includes a groove bottom and two opposite side surfaces inclined in different directions. The first portion 1411 is configured as a first chamfer of a first cutting edge A1.

[0115] A second portion 1412 is formed in the silicon substrate 10 . The second portion 1412 extends inward from the bottom of the first portion 1411 and does not penetrate the silicon substrate 10 , thereby forming a first sub-cutting groove 141 .

[0116] In this embodiment, during the process of cutting the silicon substrate 10 , the chamfer is formed first and then the silicon substrate 10 is cut, which is beneficial to avoid edge damage of the silicon substrate 10 and protect the structural integrity of the silicon substrate 10 .

[0117] It is understood that the distance between the two opposite sides of the first part 1411, i.e., the groove width of the first part 1411, should be greater than the groove width of the second part 1412; the dimension of the first part 1411 in the extension direction is smaller than the dimension of the second part 1412 in the extension direction; wherein the groove width refers to the maximum distance between the two opposite sides in the direction parallel to the silicon substrate 10. For example, the groove depth of the first part 1411 may be 110 μm-150 μm, and the groove depth of the second part 1412 may be 700 μm-745 μm.

[0118] The angle between the two side surfaces of the first portion 1411 can be, but is not limited to, any angle.

[0119] In a preferred embodiment, the angle between two opposite side surfaces of the first portion 1411 is in the range of 85°-95°.

[0120] The angle range of this embodiment is convenient for processing on the one hand, and is helpful in reliably preventing the silicon substrate 10 from being chipped or damaged on the other hand.

[0121] Specifically, the angle between the two opposite side surfaces of the first portion 1411 may be, but is not limited to, 85°, 87°, 90°, 92° or 95°.

[0122] In some embodiments, the dimension of the first portion 1411 in the extension direction thereof is 0.14 to 0.19 times the thickness of the silicon substrate 10 .

[0123] The size of the first portion 1411 in this embodiment is conducive to convenient processing and can reliably form the first chamfer. At the same time, problems such as edge collapse of the silicon substrate 10 will not occur during the processing.

[0124] Specifically, the size of the first portion 1411 in the extension direction thereof may be, but is not limited to, 0.14 times, 0.15 times, 0.16 times, 0.18 times, or 0.19 times the thickness of the silicon substrate 10 .

[0125] For example, the thickness of the silicon substrate 10 may be 775 μm, and the groove depth of the first portion 1411 may be 110 μm-150 μm.

[0126] In some embodiments, the dimension of the first sub-cut groove 141 in the extension direction thereof is 0.9 times to 0.96 times the thickness of the silicon substrate 10 .

[0127] In this embodiment, the size of the first sub-cut groove 141 is conducive to ensuring that it does not penetrate the silicon substrate 10, thereby avoiding problems such as the silicon substrate 10 being cracked due to cutting too deep.

[0128] Specifically, the size of the first sub-cut groove 141 in the extending direction thereof may be, but is not limited to, 0.9 times, 0.92 times, 0.94 times, or 0.96 times the thickness of the silicon substrate 10 .

[0129] For example, the thickness of the silicon substrate 10 may be 775 μm, and the depth of the first sub-cut groove 141 may be 700 μm-745 μm.

[0130] As an achievable manner, the third cutting groove 14 includes a first sub-cutting groove 141 and a second sub-cutting groove 142, and the third cutting groove 14 is respectively opened on the surface of the silicon substrate 10 away from the cover plate 20 and the fourth cutting groove 23 is opened at a position corresponding to the second cutting groove 22 on the second surface, including:

[0131] A first sub-cut groove 141 is formed on the surface of the silicon substrate 10 away from the cover plate 20. The first sub-cut groove 141 extends from the surface of the silicon substrate 10 away from the cover plate 20 toward the cover plate 20 and does not penetrate the silicon substrate 10.

[0132] A fourth cutting groove 23 is formed at a position of the second surface corresponding to the second cutting groove 22. The fourth cutting groove 23 extends toward the silicon substrate 10 and communicates with the second cutting groove 22, so that the silicon substrate 10 is exposed in the fourth cutting groove 23.

[0133] A second sub-cut groove 142 is formed on the silicon substrate 10 . The second sub-cut groove 142 extends inward from the surface of the silicon substrate 10 exposed at the fourth cut groove 23 to communicate with the first sub-cut groove 141 .

[0134] In this embodiment, a first sub-cutting groove 141 is first opened on the surface of the silicon substrate 10, and then a fourth cutting groove 23 is opened on the cover plate 20. The fourth cutting groove 23 penetrates the cover plate 20 to expose the silicon substrate 10. Subsequently, the silicon substrate 10 is cut a second time to form a second sub-cutting groove 142. The second sub-cutting groove 142 is connected to the first sub-cutting groove 141 to form a third cutting groove 14, thereby realizing the cutting of the silicon substrate 10.

[0135] In some embodiments, the fourth cutting groove 23 includes a first area 231 and a second area 232, and the fourth cutting groove 23 is opened at a position of the second surface corresponding to the second cutting groove 22, including:

[0136] A first area 231 is formed by extending inward on the second surface. The first area 231 has a groove bottom and two side surfaces inclined in different directions and arranged opposite to each other. The first area 231 is configured as a chamfer of the fourth cutting groove 23.

[0137] A second area 232 is formed on the cover plate 20 , and the second area 232 extends inward from the groove bottom of the first area 231 to communicate with the second cutting groove 22 , forming a fourth cutting groove 23 ;

[0138] In this embodiment, during the process of cutting the cover plate 20 , a chamfer is formed first and then the cover plate 20 is cut, which helps to avoid edge damage of the cover plate 20 and protect the structural integrity of the cover plate 20 .

[0139] It is understood that the distance between the two opposite sides of the first region 231, i.e., the groove width of the first region 231, should be greater than the groove width of the second region 232; the dimension of the first region 231 in the extension direction is smaller than the dimension of the second region 232 in the extension direction; wherein the groove width refers to the maximum distance between the two opposite sides in the direction parallel to the silicon substrate 10. For example, the groove depth of the first region 231 may be 110 μm-150 μm, and the groove depth of the second region 232 may be 550 μm-590 μm.

[0140] The angle between the two side surfaces of the first portion 1411 can be, but is not limited to, any angle.

[0141] In some embodiments, the angle between two opposite side surfaces of the first region 231 is in the range of 85°-95°.

[0142] The angle range of this embodiment is convenient for processing on the one hand, and is helpful in reliably preventing the cover plate 20 from being chipped or damaged on the other hand.

[0143] Specifically, the angle between the two relative side surfaces of the first region 231 may be, but is not limited to, 85°, 87°, 90°, 92° or 95°.

[0144] In some embodiments, the size of the first region 231 in its extension direction is 0.15 times to 0.21 times the thickness of the cover plate 20 .

[0145] The size of the first area 231 in this embodiment is conducive to convenient processing and can reliably form the first chamfer. At the same time, problems such as edge collapse of the cover plate 20 will not occur during the processing.

[0146] Specifically, the size of the first region 231 in its extension direction may be, but is not limited to, 0.15 times, 0.17 times, 0.19 times, 0.20 times, or 0.21 times the thickness of the cover plate 20 .

[0147] For example, the thickness of the cover plate 20 may be 700 μm, and the groove depth of the first region 231 may be 110 μm-150 μm.

[0148] It should be noted that the widths of the first cutting groove 21 , the second cutting groove 22 , the third cutting groove 14 , the fourth cutting groove 23 and the fifth cutting groove 24 can be determined according to the actual cutting tool size and processing requirements.

[0149] As an achievable manner, removing the area between the first cutting edge A1 and the second cutting edge A2 on the cover plate 20 includes:

[0150] Bonding the carrier film 30 on the cover plate 20 so that the carrier film 30 is bonded and fixed in the area between the first cutting edge A1 and the second cutting edge A2 on the cover plate 20;

[0151] The carrier film 30 is removed, so that the area between the first cutting edge A1 and the second cutting edge A2 on the cover plate 20 is removed together with the carrier film 30 .

[0152] It should be noted that before cutting the cover plate 20 or the silicon substrate 10 , in order to ensure the stable movement of the positions of the cover plate 20 and the silicon substrate 10 , the cover plate 20 or the silicon substrate 10 may be pressed and bonded to the carrier film 30 (UV film).

[0153] In this embodiment, by bonding the carrier film 30 to the cover plate 20, it is convenient to fix the cover plate 20, and the area between the first cutting edge A1 and the second cutting edge A2 on the cover plate 20 can be removed, thereby reliably exposing the binding pad area and avoiding damage to the binding pad area.

[0154] In some embodiments, in the process of forming the first cutting groove 21 and the second cutting groove 22 at intervals on the first surface of the cover plate 20 , the interval between the first cutting groove 21 and the second cutting groove 22 is 1.0 mm-1.5 mm.

[0155] Here, the interval between the first cutting groove 21 and the second cutting groove 22 may be the distance between the center line of the first cutting groove 21 and the center line of the second cutting groove 22 in a direction perpendicular to the silicon substrate 10 .

[0156] In this embodiment, the spacing between the first cutting groove 21 and the second cutting groove 22 is conducive to ensuring that there is an appropriate distance between the formed first cutting edge A1 and the second cutting edge A2, so as to reliably expose the binding pad area and facilitate the arrangement of other structures on the silicon substrate 10.

[0157] As a feasible approach, in the process of forming the first cutting groove 21 and the second cutting groove 22 at intervals on the first surface of the cover plate 20 , the dimensions of the first cutting groove 21 and the second cutting groove 22 in the extension direction are 0.08 to 0.14 times the thickness of the cover plate 20 .

[0158] In this embodiment, the first cutting groove 21 and the second cutting groove 22 are used to determine the cutting position on the cover plate 20 on the one hand, and to create a gap between the area corresponding to the display area and the area corresponding to the binding pad area on the cover plate 20 on the other hand, thereby avoiding the edge collapse of the cover plate 20 or damage to the silicon substrate 10 during the cutting process.

[0159] Specifically, the size of each of the first cutting groove 21 and the second cutting groove 22 in the extension direction may be, but is not limited to, 0.08 times, 0.10 times, 0.12 times, or 0.14 times the thickness of the cover plate 20 .

[0160] For example, the thickness of the cover plate 20 is 700 μm, and the depth of the first cutting groove 21 and the second cutting groove 22 may be, but is not limited to, 60 μm-100 μm.

[0161] In summary, the preparation method of the display panel of the embodiment of the present application is to open a first cutting groove 21 and a second cutting groove 22 on the first surface of the cover plate 20; open a third cutting groove 14 on the silicon substrate 10 and a fourth cutting groove 23 at a position on the second surface corresponding to the second cutting groove 22 to form a first cutting edge A1; open a fifth cutting groove 24 at a position on the second surface corresponding to the first cutting groove 21, and the fifth cutting groove 24 extends inward to communicate with the first cutting groove 21 to form a second cutting edge A2; remove the area on the cover plate 20 between the first cutting edge A1 and the second cutting edge A2 to expose the binding pad area. In this way, the first cutting groove 21 and the second cutting groove 22 are firstly opened on the cover plate 20, so that there is a gap between the area corresponding to the binding pad area and the area corresponding to the display area on the cover plate 20, which is conducive to avoiding the cover plate 20 from being damaged by collision, thereby avoiding damage to the circuit and other structures on the silicon substrate 10, and further facilitating the display panel to have a good display effect and avoiding undesirable problems such as black screen; and the first cutting edge A1 and the second cutting edge A2 formed by the method of the embodiment of the present application are regular and flush, which is conducive to facilitating subsequent processing, improving production and processing efficiency, and further improving the product yield and product competitiveness of the display panel;

[0162] Furthermore, when cutting the cover plate 20 and the silicon substrate 10, chamfers are formed first, which is beneficial to further avoid chipping and damage of the silicon substrate 10 and the cover plate 20. The silicon substrate 10 is cut twice, and the cover plate 20 is cut in batches to form a first cutting edge A1 and a second cutting edge A2, ensuring that the cutting edges are regular and flush, thereby further improving product quality and facilitating subsequent processing.

[0163] The following describes a method for preparing a display panel according to an embodiment of the present application through a specific example.

[0164] like Figure 8-17 As shown, the manufacturing process of the display panel includes the following steps:

[0165] like Figure 8 As shown, the cover plate 20 is fixed to the blue film (carrier film 30) to achieve fixation of the cover plate 20;

[0166] like Fig. 9 As shown, after the cover plate 20 is fixed, a first cutting groove 21 and a second cutting groove 22 are cut on one surface of the cover plate 20, the first cutting groove 21 is located in an area (dummy CG) of the cover plate 20 corresponding to the binding pad area, and the second cutting groove 22 is located in a preset cutting path; wherein the groove depth of the first cutting groove 21 and the second cutting groove 22 is 60 μm-100 μm, and the groove width of the first cutting groove 21 and the second cutting groove 22 is 80 μm-120 μm;

[0167] like Fig.10 As shown, the cover plate 20 is bonded to the silicon substrate 10 by optical adhesive;

[0168] like Fig.11 As shown, the silicon substrate 10 attached to the cover plate 20 is fixed on the carrier film 30 to achieve fixation;

[0169] like Fig.12 As shown, a V-shaped groove is cut on the silicon substrate 10 at a position corresponding to the second cutting groove 22 by a short-blade cutting knife as the first part 1411 of the first sub-cutting groove 141; wherein the groove depth of the V-shaped groove is 130 μm, and the angle between the two side surfaces of the V-shaped groove is 90 degrees;

[0170] like Fig.13 As shown, a long-blade cutting knife is used to continue cutting the V-shaped groove of the silicon substrate 10 to form a second portion 1412 of the first sub-cutting groove 141, so that the groove depth of the first sub-cutting groove 141 is 745 μm, and the cutting width can be 60 μm-80 μm;

[0171] The cut silicon substrate 10 is turned over and fixed on the carrier film 30 so that the cover plate 20 faces upwards;

[0172] like Fig.14 As shown, a V-shaped groove is cut on the other surface of the cover plate 20 at a position corresponding to the second cutting groove 22 as the first area 231 of the fourth cutting groove 23, the groove depth of the V-shaped groove is 100 μm, and the angle between the two side surfaces of the V-shaped groove is 90°;

[0173] like Fig.15 As shown, a long-blade cutting knife is used to continue cutting from the bottom of the V-shaped groove until the second area 232 of the fourth cutting groove 23 is formed by penetrating the cover plate 20. The groove depth of the second area 232 is 600 μm, and the groove width can be between 90-110 μm.

[0174] like Fig.16 As shown, a long-blade cutting knife is used to cut the position corresponding to the first cutting groove 21 on the cover plate 20 to form a fifth cutting groove 24. The groove depth of the fifth cutting groove 24 is 600 μm, and the groove width can be between 90-110 μm. Since there is a distance between the first cutting groove 21 and the second cutting groove 22, a cutting gap can be formed to avoid collision and damage of the cover plate 20.

[0175] like Fig.17 As shown, the cut cover plate 20 is turned over and fixed on the carrier film 30, and the dummy CG will be adhered to the carrier film 30, so that the dummy CG can be removed.

[0176] In a third aspect, the present invention provides a display device, comprising the display panel of the first aspect or the display panel prepared according to the preparation method of the second aspect. It is understandable that the display device has all the features and advantages of the above display panels, which will not be elaborated here. In short, the display device has high quality and yield rate and good display effect.

[0177] The display device is a product with an image display function. For example, the display device may be: a display, a television, a billboard, a digital photo frame, a laser printer with a display function, a telephone, a mobile phone, a personal digital assistant (PDA), a digital camera, a camcorder, a viewfinder, a navigator, a vehicle, a large-area wall, a home appliance, an information query device (such as business query equipment of e-government, banks, hospitals, power and other departments), a monitor, etc. The display device may also be a microdisplay or a product containing a microdisplay. The product containing a microdisplay may be a smart watch, a smart bracelet, a helmet display, a stereo display mirror, and any of AR devices (such as AR glasses), VR devices (such as VR glasses), etc. For example, a microdisplay may be a display with a display size ranging from about 0.2 inches to about 2.5 inches, but is not limited thereto. It can be understood that the microdisplay may also be a display with a smaller display size, such as a display size less than or equal to 0.2 inches.

[0178] It should be understood that the terms "center", "longitudinal", "lateral", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside" and the like used above to indicate orientations or positional relationships are based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the panel or component referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as limiting the present invention. In addition, the terms "first" and "second" are used for descriptive purposes only, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, the features defined as "first" and "second" may explicitly or implicitly include one or more of the features. In the description of the present invention, unless otherwise specified, "multiple" means two or more.

[0179] The above description is only a preferred embodiment of the present application and an explanation of the technical principles used. Those skilled in the art should understand that the scope of the invention involved in the present application is not limited to the technical solution formed by a specific combination of the above technical features, but should also cover other technical solutions formed by any combination of the above technical features or their equivalent features without departing from the inventive concept. For example, the above features are replaced with (but not limited to) technical features with similar functions disclosed in the present application.

Claims

1. A display panel, characterized in that: The display panel comprises a silicon substrate and a cover plate covered on the silicon substrate, wherein the silicon substrate comprises a bonding pad area, the display panel comprises a first cutting edge, the cover plate comprises a second cutting edge, the second cutting edge is retracted relative to the first cutting edge to expose the bonding pad area, and the cover plate comprises a first surface and a second surface arranged opposite to each other; The first cutting edge is formed by cutting through the cover plate from a position of the second surface corresponding to the second cutting groove toward the silicon substrate and cutting through the silicon substrate from a position of the surface of the silicon substrate corresponding to the second cutting groove toward the inside of the silicon substrate; The second cutting edge is formed by cutting through the cover plate from a position on the second surface corresponding to the first cutting groove toward the direction of the silicon substrate, wherein the first cutting groove and the second cutting groove are arranged on the first surface at intervals, the first cutting groove is located in an area of ​​the first surface corresponding to the binding pad area, and the position of the second cutting groove corresponds to a preset cutting path.

2. The display panel according to claim 1, characterized in that: The distance between the first cutting edge and the second cutting edge is 1.0 mm-1.5 mm.

3. The display panel according to claim 1, characterized in that: The first cutting edge forms a first chamfer on a surface of the silicon substrate facing away from the cover plate.

4. The display panel according to claim 1 or 3, characterized in that: The first cutting edge forms a second chamfer on the second surface of the cover plate.

5. A method for preparing a display panel, characterized in that: The display panel comprises a silicon substrate and a cover plate, wherein the silicon substrate comprises a bonding pad area, and the cover plate has a first surface and a second surface arranged opposite to each other; the preparation method comprises the following steps: A first cutting groove and a second cutting groove are provided on the first surface of the cover plate, the first cutting groove and the second cutting groove respectively extend inward from the first surface and do not penetrate the cover plate, the first cutting groove is located in a region of the cover plate corresponding to the binding pad region, and the position of the second cutting groove corresponds to a preset cutting path; A third cutting groove is respectively formed on the silicon substrate and a fourth cutting groove is formed at a position of the second surface corresponding to the second cutting groove, so as to form a first cutting edge; wherein the position of the third cutting groove corresponds to the position of the second cutting groove, and the third cutting groove extends from the surface of the silicon substrate toward the inside; and the fourth cutting groove extends from the second surface toward the silicon substrate; A fifth cutting groove is formed at a position of the second surface corresponding to the first cutting groove, and the fifth cutting groove extends inwardly to communicate with the first cutting groove to form the second cutting edge; The area of ​​the cover plate between the first cutting edge and the second cutting edge is removed to expose the binding pad area.

6. The preparation method according to claim 5, characterized in that: The third cutting groove comprises a first sub-cutting groove, and the third cutting groove is respectively opened on the surface of the silicon substrate away from the cover plate and the fourth cutting groove is opened at a position of the second surface corresponding to the second cutting groove, including: The first sub-cutting groove is formed on the surface of the silicon substrate away from the cover plate, wherein the first sub-cutting groove extends from the surface of the silicon substrate away from the cover plate toward the cover plate and does not penetrate the silicon substrate; A fourth cutting groove is formed at a position of the second surface corresponding to the second cutting groove. The fourth cutting groove passes through the cover plate toward the silicon substrate to the inside of the silicon substrate and communicates with the first sub-cutting groove.

7. The preparation method according to claim 5, characterized in that: The first sub-cutting groove comprises a first part and a second part, and the first sub-cutting groove is opened on the surface of the silicon substrate away from the cover plate, comprising: The first portion is formed by extending inwardly from the surface of the silicon substrate away from the cover plate, wherein the first portion includes a groove bottom and two opposite side surfaces inclined in different directions, and the first portion is configured as a first chamfer of the first cutting edge; forming the second portion in the silicon substrate, the second portion extending inward from the groove bottom of the first portion and not penetrating the silicon substrate, to form the first sub-cutting groove; Preferably, the angle between two opposite side surfaces of the first portion is in the range of 85°-95°.

8. The preparation method according to claim 7, characterized in that: The dimension of the first portion in its extending direction is 0.14 to 0.19 times the thickness of the silicon substrate.

9. The preparation method according to claim 6, characterized in that: The dimension of the first sub-cutting groove in its extending direction is 0.9 times to 0.96 times the thickness of the silicon substrate.

10. The preparation method according to claim 5, characterized in that: The third cutting groove comprises a first sub-cutting groove and a second sub-cutting groove, and the third cutting groove is respectively opened on the surface of the silicon substrate away from the cover plate and the fourth cutting groove is opened at a position of the second surface corresponding to the second cutting groove, including: The first sub-cutting groove is formed on the surface of the silicon substrate away from the cover plate, wherein the first sub-cutting groove extends from the surface of the silicon substrate away from the cover plate toward the cover plate and does not penetrate the silicon substrate; A fourth cutting groove is formed at a position of the second surface corresponding to the second cutting groove, wherein the fourth cutting groove extends toward the silicon substrate and communicates with the second cutting groove, so that the silicon substrate is exposed in the fourth cutting groove; The second sub-cut groove is formed on the silicon substrate, and the second sub-cut groove extends inward from the surface of the silicon substrate exposed at the fourth cut groove to communicate with the first sub-cut groove.

11. The preparation method according to claim 10, characterized in that: The fourth cutting groove includes a first area and a second area, and the fourth cutting groove is opened at a position of the second surface corresponding to the second cutting groove, including: The first region is formed by extending the second surface inward, the first region having a groove bottom and two side surfaces inclined in different directions and arranged opposite to each other, and the first region is configured as a chamfer of the fourth cutting groove; A second area is formed on the cover plate, the second area extending inward from the groove bottom of the first area to communicate with the second cutting groove to form the fourth cutting groove; Preferably, the angle between two opposite side surfaces of the first region is in the range of 85°-95°.

12. The preparation method according to claim 11, characterized in that: The size of the first region in its extension direction is 0.15 times to 0.21 times the thickness of the cover plate.

13. The preparation method according to claim 5, characterized in that: Removing the area on the cover plate between the first cutting edge and the second cutting edge comprises: Adhere a carrier film to the cover plate, so that the area of ​​the cover plate between the first cutting edge and the second cutting edge is bonded and fixed to the carrier film; The carrier film is removed so that the area on the cover plate between the first cutting edge and the second cutting edge is removed together with the carrier film.

14. The preparation method according to any one of claims 5 to 13, in the process of providing a first cutting groove and a second cutting groove at intervals on the first surface of the cover plate, a distance between the first cutting groove and the second cutting groove is 1.0 mm to 1.5 mm.

15. The preparation method according to any one of claims 5 to 13, in the process of forming a first cutting groove and a second cutting groove in the first surface of the cover plate, the size of each of the first cutting groove and the second cutting groove in the extension direction is 0.08 times to 0.14 times the thickness of the cover plate.

16. A display device, characterized in that A display panel comprising the display panel according to any one of claims 1 to 4 or a display panel prepared according to the preparation method according to any one of claims 5 to 15.

Images