Manufacturing process for enhancing brightness of Micro OLED display device
By using photolithography, nanoimprinting and other technologies to prepare subwavelength structures and nanoparticles or scattering microstructures in the production process of Micro OLED displays, the problem of brightness reduction caused by BM Pattern is solved, and higher display brightness and luminous efficiency are achieved.
Patent Information
- Application Number
- CN202411995478.2
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-31
- Publication Date
- 2025-04-25
AI Technical Summary
In the CF process of Micro OLED displays, adding BlackMatrix (BM) between RGB Patterns can alleviate the phenomenon of color mixing between adjacent pixels, but it can also cause the problem of lower brightness of the display device.
A production process that enhances the brightness of Micro OLED display devices is adopted, including substrates, OLED material layers, TFE packaging layers, CF layers, reflective layers, OCR layers and glass. Subwavelength structures, such as moth eye structures, are prepared through photolithography, nanoimprinting and other technologies, to change the refractive and reflection characteristics of light at the substrate interface, reduce the reflection loss of light, and scatter lateral light to the vertical direction through the nanoparticles or scattered microstructures of the substrate.
Maximize the use of OLED white light sources, improve the luminous efficiency of Micro OLED display devices, enhance display brightness, and improve forward brightness by reducing the reflection loss of light and scattering of lateral light to the vertical direction.
Smart Images

Figure CN119894323A_ABST
Abstract
Description
Technical Field
[0001] The invention relates to a manufacturing process for enhancing the brightness of a Micro OLED display device, and belongs to the technical field of manufacturing processes for the brightness of display devices. Background Art
[0002] For example, the application number: 202121817772.6 discloses a MicroOLED display structure applied in the field of MicroOLED display technology, wherein the MicroOLED display structure includes a silicon substrate, a CMOS circuit A, an Anode layer B, an OLED layer C, a PDL layer D, an encapsulation layer E, an OC1 layer F, an OC2 layer G, and a glass cover plate H. A microstructure I with an encapsulation layer groove or an encapsulation layer protrusion is etched on the surface of the encapsulation layer E, and an OC1 layer protrusion or an OC1 layer groove is set on the surface of the OC1 layer F. The MicroOLED display structure increases the contact area between the encapsulation layer and the OC layer, improves the adhesion without adding an adhesion layer, and reduces product failure caused by separation of the encapsulation layer and the OC layer.
[0003] There are still deficiencies based on searching the prior art:
[0004] In the CF process of Micro OLED displays, adding BM (BlackMatrix) between the RGB Pattern can reduce the color mixing between adjacent pixels, but it will also cause the brightness of the display device to decrease.
[0005] Therefore, a manufacturing process for enhancing the brightness of Micro OLED display devices is needed to improve the above-mentioned deficiencies. Summary of the invention
[0006] The main purpose of the present invention is to provide a manufacturing process for enhancing the brightness of a Micro OLED display device.
[0007] The purpose of the present invention can be achieved by adopting the following technical solutions:
[0008] A manufacturing process for enhancing the brightness of a Micro OLED display device includes a substrate, on which an OLED material layer, a TFE encapsulation layer, a CF layer, an OCR layer and glass are covered from bottom to top.
[0009] Preferably, the substrate is the bottom circuit structure of OLED.
[0010] Preferably, the OLED material layer includes HIL, HTL, EBL, EML, HBL, ETL, and EIL functional layers, and the OLED material layer is phosphorescent, fluorescent, or highly fluorescent OLED material.
[0011] Preferably, the TFE encapsulation layer is a single layer of AlO, TiO, SiOx, SiNx, SiOxNy or a multilayer composite film composed of one or more of the above materials.
[0012] Preferably, the CF layer includes a BM / R / G / B Pattern, wherein the R / G / B Pattern functions to filter light of other wavelengths in white light and only transmit light of corresponding colors.
[0013] Preferably, the reflective layer is a reflective material deposited on the BM Pattern using a Low Damage Sputter and photolithography and etching processes.
[0014] Preferably, the OCR layer is transparent glue used for patch bonding.
[0015] Preferably, the display body is composed of a substrate, an OLED material layer, a TFE package, a CF layer, a reflective layer, an OCR layer and glass, and the upper and lower sides of the display body are respectively covered with a sealing layer and a substrate.
[0016] Preferably, the sealing layer is covered with photolithography, nanoimprint layer, fixed glue layer and moth-eye structure layer from top to bottom, and the substrate is covered with fixed glue layer II, nanoparticle layer and scattering microstructure layer from bottom to top.
[0017] Preferably, the sealing layer and the substrate cover the upper and lower sides of the display body respectively.
[0018] Beneficial technical effects of the present invention:
[0019] The present invention provides a manufacturing process for enhancing the brightness of a Micro OLED display device.
[0020] 1. Reduce light loss and maximize the use of OLED white light source;
[0021] 2. Improve the luminous efficiency of Micro OLED display devices and enhance display brightness;
[0022] 3. Use photolithography, nanoimprinting and other technologies to prepare sub-wavelength structures (such as moth-eye structures, etc.), and by changing the refraction and reflection characteristics of light at the substrate interface, reduce the reflection loss of light during the emission process, and improve the transmittance of light, so that more photons can be emitted from the inside of the device to the outside to be observed, thereby enhancing the brightness of the display device;
[0023] 4. The substrate is doped with nanoparticles or made into periodic scattering microstructures to scatter the laterally propagating light in the vertical direction, thereby improving the forward brightness. BRIEF DESCRIPTION OF THE DRAWINGS
[0024] Figure 1A flowchart of the structure and photolithography patterning process of Real RGB OLEDoS according to a preferred embodiment of a manufacturing process for enhancing the brightness of a Micro OLED display device according to the present invention;
[0025] Figure 2 It is an exploded view of a preferred embodiment of a manufacturing process for enhancing the brightness of a Micro OLED display device according to the present invention;
[0026] Figure 3 It is an overall stereogram of a preferred embodiment of a manufacturing process for enhancing the brightness of a Micro OLED display device according to the present invention;
[0027] Figure 4 It is an overall side view of a preferred embodiment of a manufacturing process for enhancing the brightness of a Micro OLED display device according to the present invention;
[0028] Figure 5 A schematic diagram of a sealing layer according to a preferred embodiment of a manufacturing process for enhancing the brightness of a Micro OLED display device according to the present invention;
[0029] Figure 6 A schematic diagram of a substrate according to a preferred embodiment of a manufacturing process for enhancing the brightness of a Micro OLED display device according to the present invention.
[0030] In the figure: 100, substrate; 200, OLED material layer; 300, TFE encapsulation layer; 400, CF layer; 410, reflective layer; 500, OCR layer; 600, glass; 1, display body; 2, sealing layer; 201, photolithography, nanoimprinting layer; 202, fixed glue layer; 203, moth-eye structure layer; 3, substrate; 301, fixed glue layer 2; 302, nanoparticle layer; 303, scattering microstructure layer. DETAILED DESCRIPTION
[0031] In order to make the technical solution of the present invention more clear and specific to those skilled in the art, the present invention is further described in detail below in conjunction with embodiments and drawings, but the implementation manner of the present invention is not limited thereto.
[0032] like Figure 1 - Figure 2 As shown, the present embodiment provides a manufacturing process for enhancing the brightness of a Micro OLED display device, including a substrate 100, on which an OLED material layer 200, a TFE encapsulation layer 300, a CF layer 400, an OCR layer 500 and a glass 600 are covered from bottom to top.
[0033] The substrate 100 is the bottom circuit structure of the OLED.
[0034] The OLED material layer 200 includes HIL, HTL, EBL, EML, HBL, ETL, and EIL functional layers. The OLED material layer 200 is a phosphorescent, fluorescent, or highly fluorescent OLED material.
[0035] The TFE encapsulation layer 300 is a single layer of Al2O3, TiO2, SiOx, SiNx, SiOxNy or a multi-layer composite film composed of two or more of the above materials.
[0036] The CF layer 400 includes a BM / R / G / B Pattern, wherein the R / G / B Pattern functions to filter light of other wavelengths in the white light and only transmit light of corresponding colors.
[0037] The reflective layer 410 is a reflective material deposited on the BM Pattern using a Low Damage Sputter and photolithography and etching processes.
[0038] The OCR layer 500 is a transparent glue used for patch bonding.
[0039] The display body 1 is composed of a substrate 100, an OLED material layer 200, a TFE package 300, a CF layer 400, a reflective layer 410, an OCR layer 500 and a glass 600. The upper and lower sides of the display body 1 are covered with a sealing layer 2 and a substrate 3 respectively.
[0040] The sealing layer 2 is covered with a photolithography layer, a nano-imprinting layer 201 , a fixed glue layer 202 and a moth-eye structure layer 203 from top to bottom, and the substrate 3 is covered with a fixed glue layer 2 301 , a nano-particle layer 302 and a scattering microstructure layer 303 from bottom to top.
[0041] The sealing layer 2 and the substrate 3 cover the upper and lower sides of the display body 1 respectively.
[0042] like Figure 1 - Figure 6 As shown, the working process of a manufacturing process for enhancing the brightness of a Micro OLED display device provided in this embodiment is as follows:
[0043] Step 1: coating a negative photoresist containing black pigment on a silicon-based OLED white light device substrate;
[0044] Step 2: Expose using a mask;
[0045] Step 3: Development, removing the unexposed parts to form a BM Pattern;
[0046] Step 4: Deposit a metal reflective material film layer on the wafer surface through a Low Damage Sputter;
[0047] Step 5: Make positive photoresist on the BM Pattern by photolithography;
[0048] Step 6: Remove the metal reflective film layer in the non-BM area by etching;
[0049] Step 7: Remove the positive resist from other areas;
[0050] Step 8: Create RGB Pattern;
[0051] Step 9: Apply OCR glue and perform glass bonding (CG);
[0052] For the Low Damage Sputter in step 2, the principle is: bombard the target with argon ions in an electric field to deposit metal on the wafer surface;
[0053] For the reflective material in step 2, its surface reflectivity is required to be greater than 40%, and materials such as silver and aluminum can be used;
[0054] For the reflective material film layer in step 2, the film layer thickness is required to be between 40nm and 140nm.
[0055] Example
[0056] like Figure 1 and Figure 2 As shown,
[0057] Step 1. Coat a negative photoresist containing black pigment on the silicon-based OLED white light device substrate;
[0058] Step 2. Use a mask to expose;
[0059] Step 3. Development, remove the unexposed parts and form a BM Pattern;
[0060] Step 4. Deposit a metal reflective material film layer on the wafer surface through a Low Damage Sputter;
[0061] Step 5. Make positive photoresist on the BM Pattern by photolithography;
[0062] Step 6. Remove the metal reflective film layer in the non-BM area by etching;
[0063] Step 7. Remove the positive resist from other areas;
[0064] Step 8. Make RGB Pattern;
[0065] Step 9. Apply OCR glue and perform glass bonding (CG);
[0066] For the Low Damage Sputter in Step 2, the principle is: bombard the target with argon ions in an electric field to deposit metal on the wafer surface;
[0067] For the reflective material in Step 2, its surface reflectivity is required to be greater than 40%, and materials such as silver and aluminum can be used;
[0068] For the reflective material film layer in Step 2, the film thickness is required to be between 40nm and 140nm;
[0069] The upper and lower sides of the display body (1) are respectively covered with a sealing layer (2), a photolithography layer, a nano-imprinting layer (201), a fixed glue layer (202), a moth-eye structure layer (203), a substrate (3), a second fixed glue layer (301), a nano-particle layer (302) and a scattering micro-structure layer (303);
[0070] Sub-wavelength structures (such as moth-eye structures) are prepared using photolithography, nanoimprinting and other technologies. By changing the refraction and reflection characteristics of light at the substrate interface, the reflection loss of light during emission is reduced, and the light transmittance is increased, so that more photons can be emitted from the inside of the device to be observed outside, thereby enhancing the brightness of the display device;
[0071] The substrate 3 scatters the light propagating laterally in the vertical direction by doping nanoparticles or making a periodic scattering microstructure, thereby improving the forward brightness.
[0072] The above description is only a further embodiment of the present invention, but the protection scope of the present invention is not limited thereto. Any technician familiar with the technical field can make equivalent replacements or changes according to the technical solutions and concepts of the present invention within the scope disclosed by the present invention, which belong to the protection scope of the present invention.
Claims
1. A process for enhancing the brightness of a Micro OLED display device, characterized in that: The invention comprises a substrate (100), wherein the substrate (100) is covered with an OLED material layer (200), a TFE encapsulation layer (300), a CF layer (400), an OCR layer (500) and glass (600) from bottom to top.
2. The process for enhancing the brightness of a Micro OLED display device according to claim 1, characterized in that: The substrate (100) is the bottom circuit structure of the OLED.
3. The process for enhancing the brightness of a Micro OLED display device according to claim 1, characterized in that: The OLED material layer (200) comprises HIL, HTL, EBL, EML, HBL, ETL and EIL functional layers, and the OLED material layer (200) is a phosphorescent, fluorescent or highly fluorescent OLED material.
4. The process for enhancing the brightness of a Micro OLED display device according to claim 1, characterized in that: The TFE encapsulation layer (300) is a single layer of Al2O3, TiO2, SiOx, SiNx, SiOxNy or a multilayer composite film composed of two or more of the above materials.
5. The process for enhancing the brightness of a Micro OLED display device according to claim 1, characterized in that: The CF layer (400) includes a BM / R / G / B Pattern, wherein the R / G / B Pattern functions to filter light of other wavelengths in the white light and only transmit light of corresponding colors.
6. The process for enhancing the brightness of a Micro OLED display device according to claim 1, characterized in that: The reflective layer (410) is a reflective material deposited on the BM Pattern using a Low Damage Sputter and photolithography and etching processes.
7. The process for enhancing the brightness of a Micro OLED display device according to claim 1, characterized in that: The OCR layer (500) is a transparent glue used for patch bonding.
8. The process for enhancing the brightness of a Micro OLED display device according to claim 7, characterized in that: The display body (1) is composed of a substrate (100), an OLED material layer (200), a TFE package (300), a CF layer (400), a reflective layer (410), an OCR layer (500) and glass (600), and the upper and lower sides of the display body (1) are respectively covered with a sealing layer (2) and a substrate (3).
9. The process for enhancing the brightness of a Micro OLED display device according to claim 8, characterized in that: The sealing layer (2) is covered from top to bottom with a photolithography layer, a nano-imprinting layer (201), a fixed glue layer (202) and a moth-eye structure layer (203), and the substrate (3) is covered from bottom to top with a second fixed glue layer (301), a nano-particle layer (302) and a scattering microstructure layer (303).
10. The process for enhancing the brightness of a Micro OLED display device according to claim 9, characterized in that: The sealing layer (2) and the substrate (3) respectively cover the upper and lower sides of the display body (1).
Citation Information
Patent Citations
Micro OLED display structure
CN215933643U