Methods of forming high aspect ratio openings and methods of forming high aspect ratio features

Abstract

The invention relates to a method of forming a high aspect ratio opening and a method of forming a high aspect ratio feature. The method includes removing a portion of a dielectric material at a temperature less than about 0 DEG C to form at least one opening in the dielectric material. The at least one opening includes an aspect ratio greater than about 30: 1. A protective material is formed in the at least one opening and on sidewalls of the dielectric material at a temperature less than about 0 DEG C. The semiconductor device includes a stack of dielectric material including at least about 80 layers of alternating dielectric material. The dielectric material stack has substantially vertical sidewalls and at least one feature within the dielectric material stack, the at least one feature including an aspect ratio of at least about 30: 1.

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