A double-sided heat dissipation structure of a power semiconductor device and a manufacturing method thereof

By integrating cold-end substrates on the lower and upper surfaces of the power chip and using copper clips and bonding wires, efficient double-sided heat dissipation of the power semiconductor device is achieved, solving the problems of uneven chip temperature and local overheating caused by traditional single-sided heat dissipation methods, and improving heat dissipation efficiency and device stability.

CN119920778BActive Publication Date: 2025-11-25HUAZHONG UNIV OF SCI & TECH
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Patent Information

Application Number
CN202510094705.2
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2025-01-21
Publication Date
2025-11-25
Estimated Expiration
2045-01-21

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Abstract

The application discloses a double-sided heat dissipation structure of a power semiconductor device and a preparation method thereof. The double-sided heat dissipation structure comprises, from bottom to top, a first heat end substrate 10, a first conductor layer, a first cold end substrate 15, a third circuit layer of the first cold end substrate 16, a plurality of power semiconductor chips 18, a plurality of thermal interface materials 30, a sixth circuit layer of a second cold end substrate 29, a plurality of the second cold end substrate 28, a second conductor layer, a third conductor layer and a second heat end substrate 23. The lower surface of the first thermal interface material is connected with the third circuit layer of the first cold end substrate 16 through a copper clamp 21. The second conductor layer and the third conductor layer are arranged side by side. The application directly integrates the cold end substrate on the lower surface of the power chip to avoid the problem of large contact thermal resistance caused by the thermal interface material. Meanwhile, the cold end substrate is also integrated on the upper surface of the power chip, so that the double-sided high-efficiency heat dissipation of the power chip is realized.
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Citation Information

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