A surface emitting semiconductor optical amplifier and method of using the same

Abstract

The application relates to a surface-emitting semiconductor optical amplifier and a use method thereof, and belongs to the technical field of semiconductor optical amplifiers. The surface-emitting semiconductor optical amplifier sequentially comprises an N-face discharge electrode, an N-face insulating layer, a substrate, an active region, a P-face insulating layer and a P-face discharge electrode. Low-temperature plasma is generated in a discharge gas in a dielectric barrier discharge breakdown discharge cavity between the N-face discharge electrode and the P-face discharge electrode. A plurality of leakage holes are uniformly distributed on the N-face insulating layer and the P-face insulating layer. The N-face discharge electrode and the P-face discharge electrode are electrically connected with a driving power supply respectively. The application can solve the technical problems of the current electrically-pumped vertical cavity surface-emitting semiconductor optical amplifier, such as limited light transmission aperture, limited amplification capacity and low output power caused by current crowding effect.

Description

Technical Field

[0001] This invention belongs to the field of semiconductor optical amplifier technology, and specifically relates to a surface-emitting semiconductor optical amplifier and its usage method. Background Technology

[0002] Compared to traditional edge-emitting semiconductor optical amplifiers (PES), vertical-cavity surface-emitting semiconductor optical amplifiers (VCS) not only have advantages such as small size and light weight, but also possess inherent advantages such as circularly symmetrical output beams and ease of fiber coupling, making them promising for future applications. However, in existing technologies, electrically pumped VCS suffers from current congestion effects that limit the aperture, resulting in limited amplification capabilities and low output power. Optically pumped VCS require complex pump optics systems, increasing system complexity and reducing overall electro-optical efficiency. Summary of the Invention

[0003] To address the shortcomings of existing technologies, a surface-emitting semiconductor optical amplifier and its usage method are proposed to solve the technical problems of limited aperture, limited amplification capability, and low output power in electrically pumped vertical-cavity surface-emitting semiconductor optical amplifiers due to current congestion effects.

[0004] To achieve the above objectives, the present invention provides the following technical solution: In a first aspect, the present invention provides a surface-emitting semiconductor optical amplifier, comprising, in sequence, an N-side discharge electrode, an N-side insulating layer, a substrate, an active region, a P-side insulating layer, and a P-side discharge electrode. A dielectric barrier discharge occurs between the N-side discharge electrode and the P-side discharge electrode, breaking down the discharge gas in the discharge cavity to generate a low-temperature plasma electrode. A plurality of leakage holes are evenly distributed on the N-side insulating layer and the P-side insulating layer. The N-side discharge electrode and the P-side discharge electrode are respectively electrically connected to a driving power supply.

[0005] The technical solution is further configured such that a window is provided on the side of the plasma electrode away from the substrate.

[0006] The technical solution is further configured such that the N-side discharge electrode is located between the N-side window and the N-side insulating layer, the P-side discharge electrode is located between the P-side window and the P-side insulating layer, and the middle of the N-side discharge electrode and the P-side discharge electrode serves as a discharge cavity, which is filled with discharge gas.

[0007] The technical solution is further configured such that the N-side discharge electrode and the P-side discharge electrode are circular or square rings, and the inner ring is serrated.

[0008] The technical solution is further configured such that the active region is a quantum dot active region or a quantum well active region.

[0009] The technical solution is further configured such that the substrate is a GaAs or GaN substrate.

[0010] The technical solution is further configured such that an N-type DBR is disposed between the substrate and the active region, and a P-type DBR is disposed between the P-side insulating layer and the active region.

[0011] The technical solution is further configured such that the distribution shape of the several leakage holes is the same as the shape of the light spot of the seed light.

[0012] In a second aspect, the present invention provides a method of using a surface-emitting semiconductor optical amplifier, comprising the following steps: S100. A driving voltage is applied between the N-side discharge electrode and the P-side discharge electrode. A dielectric barrier discharge occurs between the N-side discharge electrode and the P-side discharge electrode, breaking down the discharge gas near them to generate low-temperature plasma. Under the continuous action of the driving voltage, the low-temperature plasma diffuses from the periphery of the discharge cavity to the center, forming a full-diameter plasma electrode. S200, the low-temperature plasma contains a large number of freely moving electrons. During this diffusion process, electrons in the N-side discharge cavity enter the substrate through the leakage holes on the N-side insulating layer, flow through the active region, and enter the P-side discharge cavity through the leakage holes on the P-side insulating layer, forming a loop current. S300 When the seed light passes through the surface-emitting semiconductor optical amplifier, the active region undergoes stimulated emission under the action of the seed light, and the seed light is output after gaining. The technical solution is further configured such that, in step S300, an N-type DBR is disposed between the substrate and the active region, and a P-type DBR is disposed between the P-surface insulating layer and the active region. The seed light is output after multiple reflections and gain through the two layers of reflectors, the P-type DBR and the N-type DBR. The beneficial effects of this invention are: A single-power-supply drive mode is adopted, meaning that a single drive power source both generates plasma and provides current to the semiconductor. By placing N-plane and P-plane insulating layers between the N-plane and P-plane discharge electrodes, dielectric barrier discharge is achieved to generate a full-aperture plasma electrode. By setting leakage holes on the N-plane and P-plane insulating layers, active region current injection is achieved. By setting the distribution of leakage holes, the uniformity of the injected current is achieved. The plasma electrode can diffuse to any aperture, thus enabling large-aperture applications. This improves output power while ensuring the quality of the output beam. Attached Figure Description

[0013] Figure 1 This is a front view of the surface-emitting semiconductor optical amplifier in an embodiment of the present invention; Figure 2This is a top view of the leakage hole in an embodiment of the present invention; Figure 3 This is a front view of another embodiment of the surface-emitting semiconductor optical amplifier in this invention. Figure 4 This is a flowchart illustrating the method of using a surface-emitting semiconductor optical amplifier in an embodiment of the present invention; In the attached figures: 1. N-side insulating layer; 2. Substrate; 3. Active region; 4. P-side insulating layer; 5. N-side discharge electrode; 6. N-side discharge cavity; 7. P-side discharge electrode; 8. P-side discharge cavity; 9. N-side window; 10. Leakage hole; 11. N-type DBR; 12. P-type DBR; 13. P-side window. Detailed Implementation

[0014] To enable those skilled in the art to better understand the technical solutions of the present invention, the technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings. Based on the embodiments in this application, other similar embodiments obtained by those skilled in the art without creative effort should all fall within the scope of protection of this application. Furthermore, directional terms mentioned in the following embodiments, such as "up," "down," "left," and "right," are only for reference to the directions in the accompanying drawings; therefore, the directional terms used are for illustrative purposes and not for limiting the invention.

[0015] According to an embodiment of the present invention, a surface-emitting semiconductor optical amplifier is provided. Please refer to [link / reference]. Figures 1 to 2 The device sequentially includes an N-side discharge electrode 5, an N-side insulating layer 1, a substrate 2, an active region 3, a P-side insulating layer 4, and a P-side discharge electrode 7. A dielectric barrier discharge occurs between the N-side discharge electrode 5 and the P-side discharge electrode 7, breaking down the discharge gas in the discharge cavity to generate a low-temperature plasma electrode. A plurality of leakage holes 10 are evenly distributed on the N-side insulating layer 1 and the P-side insulating layer 4. The N-side discharge electrode 5 and the P-side discharge electrode 7 are electrically connected to the driving power supply.

[0016] Specifically, when the surface-emitting semiconductor optical amplifier includes only the N-side discharge electrode 5, the N-side insulating layer 1, the substrate 2, the active region 3, the P-side insulating layer 4, and the P-side discharge electrode 7, the amplifier is a transmission-type traveling-wave amplifier. In this amplifier, the N-side discharge cavity 6 is located in the middle of the N-side discharge electrode 5, and the P-side discharge cavity 8 is located in the middle of the P-side discharge electrode 7.

[0017] It should be noted that a single-power-supply drive mode is adopted, meaning that one drive power source both generates plasma and provides current to the semiconductor. By setting an N-side insulating layer 1 and a P-side insulating layer 4 between the N-side discharge electrode 5 and the P-side discharge electrode 7, a full-aperture plasma electrode is generated through dielectric barrier discharge. By setting leakage holes 10 on the N-side insulating layer 1 and the P-side insulating layer 4, current injection into the active region 3 is achieved. By setting the distribution of leakage holes 10, the uniformity of the injected current is achieved. The plasma electrode can diffuse to any aperture, thus enabling a large aperture and ensuring the quality of the output beam while increasing the output power.

[0018] In the surface-emitting semiconductor optical amplifier of this embodiment, please refer to... Figures 1 to 2 The plasma electrode has a window on its side away from the substrate 2.

[0019] It should be noted that the N-side discharge electrode 5 is provided with an N-side window 9 on the side away from the substrate 2, and the P-side discharge electrode 7 is provided with a P-side window 13 on the side away from the substrate 2.

[0020] In the surface-emitting semiconductor optical amplifier of this embodiment, please refer to... Figures 1 to 2 The N-side discharge electrode 5 is located between the N-side window 9 and the N-side insulating layer 1. The N-side window 9, the N-side discharge electrode 5, and the N-side insulating layer 1 together form the N-side discharge cavity 6, that is, the middle of the N-side discharge electrode 5 serves as the N-side discharge cavity 6. The P-side discharge electrode 7 is located between the P-side window 13 and the P-side insulating layer 4. The P-side window 13, the P-side discharge electrode 7, and the P-side insulating layer 4 together form the P-side discharge cavity 8, and the middle of the P-side discharge electrode 7 serves as the P-side discharge cavity 8. The N-side discharge cavity 6 and the P-side discharge cavity 8 are sealed with discharge gas at a certain pressure.

[0021] In the surface-emitting semiconductor optical amplifier of this embodiment, please refer to... Figures 1 to 2 The N-side discharge electrode 5 and the P-side discharge electrode 7 are configured as circular or square rings, with the inner rings being serrated.

[0022] It should be noted that the serrated shape can enhance the electric field near the discharge electrode, making it easier for the discharge gas to be broken down.

[0023] In the surface-emitting semiconductor optical amplifier of this embodiment, please refer to... Figures 1 to 2 The active region 3 is a quantum dot active region or a quantum well active region. Specifically, the active region 3 is an InGaAs / GaAsP, GaAs / AlGaAs, InGaAs / GaAs, or AlGaN / InGaN periodic multiple quantum well structure.

[0024] In the surface-emitting semiconductor optical amplifier of this embodiment, please refer to... Figures 1 to 2The substrate 2 is a GaAs or GaN substrate.

[0025] In the surface-emitting semiconductor optical amplifier of this embodiment, please refer to... Figures 1 to 3 An N-type DBR11 is disposed between the substrate 2 and the active region 3, and a P-type DBR12 is disposed between the P-side insulating layer 4 and the active region 3.

[0026] It should be noted that, compared to the transmission traveling wave amplifier, the transmission regenerative amplifier only adds the N-type DBR11 and the P-type DBR12, while the rest of the structure is exactly the same.

[0027] In the surface-emitting semiconductor optical amplifier of this embodiment, please refer to... Figures 1 to 2 The distribution shape of several leakage holes 10 is the same as the shape of the light spot of the seed light.

[0028] It should be noted that by adjusting the distribution of the leakage orifice 10, the current distribution injected into the active region 3 can be controlled, thereby controlling the excitation range of the active region 3 to match the light spot distribution of the seed light. For example, the leakage orifice 10 can be distributed in a square area to match the incident square seed light, or the leakage orifice 10 can be distributed in a circular area to match the incident circular seed light, and other arbitrary shapes.

[0029] According to an embodiment of the present invention, a method for using a surface-emitting semiconductor optical amplifier is provided. Please refer to [link / reference]. Figures 1 to 4 This includes the following steps: S100. A driving voltage is applied between the N-side discharge electrode 5 and the P-side discharge electrode 7. A dielectric barrier discharge occurs between the N-side discharge electrode 5 and the P-side discharge electrode 7, breaking down the discharge gas near them to generate low-temperature plasma. Under the continuous action of the driving voltage, the low-temperature plasma diffuses from the periphery of the discharge cavity to the center, forming a full-diameter plasma electrode. S200, the low-temperature plasma contains a large number of freely moving electrons. During the diffusion process, electrons in the N-side discharge cavity enter the substrate 2 through the leakage hole 10 on the N-side insulating layer 1, flow through the active region 3, and enter the P-side discharge cavity through the leakage hole 10 on the P-side insulating layer 4, forming a loop current. S300 When the seed light passes through the surface-emitting semiconductor optical amplifier, the active region 3 undergoes stimulated emission under the action of the seed light, and the seed light is output after gaining.

[0030] It should be noted that during plasma diffusion, when encountering the leakage hole 10, because the leakage hole 10 is very small, only a small portion of electrons pass through it, thus not affecting the diffusion of the low-temperature plasma, ultimately forming a full-aperture plasma electrode. The low-temperature plasma has a near 100% transmittance for seed light, possesses a high damage threshold, and can withstand high-power, high-energy laser output. The leakage holes 10 are uniformly distributed, resulting in a uniform injection current distribution within the active region 3, without current congestion effects, enabling the output of a high-quality laser beam. The technical solution is further configured such that, in step S300, an N-type DBR11 is disposed between the substrate 2 and the active region 3, and a P-type DBR12 is disposed between the P-side insulating layer 4 and the active region 3. The seed light is output after multiple reflections and gain through the two layers of reflectors, P-type DBR12 and N-type DBR11.

[0031] It should be noted that the reflectivity of P-type DBR12 and N-type DBR11 is relatively low and insufficient to generate lasing. When the seed light passes through the transmission traveling wave amplifier, it is directly output after one stimulated emission amplification. When the seed light passes through the transmission regenerative amplifier, the active region 3 undergoes stimulated emission under the action of the seed light, and is output after multiple reflections and amplification by the two layers of mirrors, P-type DBR12 and N-type DBR11.

[0032] The present invention has been described in detail above. The above description is only a preferred embodiment of the present invention and should not be construed as limiting the scope of the present invention. All equivalent changes and modifications made in accordance with the scope of this application should still fall within the scope of the present invention.

Claims

1. A surface emitting semiconductor optical amplifier characterized by comprising: The device sequentially includes an N-side discharge electrode, an N-side insulating layer, a substrate, an active region, a P-side insulating layer, and a P-side discharge electrode. A dielectric barrier discharge occurs between the N-side discharge electrode and the P-side discharge electrode, breaking down the discharge gas in the discharge cavity to generate a low-temperature plasma electrode. Several leakage holes are evenly distributed on the N-side insulating layer and the P-side insulating layer. By setting the distribution of leakage holes, the uniformity of the injected current is achieved. The N-side discharge electrode and the P-side discharge electrode are electrically connected to the same driving power supply. The distribution shape of the several leakage holes is the same as the shape of the seed light spot.

2. The surface-emitting semiconductor optical amplifier of claim 1, wherein The plasma electrode has a window on its side away from the substrate.

3. The surface-emitting semiconductor optical amplifier of claim 2, wherein The N-side discharge electrode is located between the N-side window and the N-side insulating layer, and the P-side discharge electrode is located between the P-side window and the P-side insulating layer. The middle of the N-side discharge electrode and the P-side discharge electrode serves as a discharge cavity, which is filled with discharge gas.

4. The surface-emitting semiconductor optical amplifier of any one of claims 1 to 3, characterized in that The N-side discharge electrode and the P-side discharge electrode are configured as circular or square rings, with the inner rings being serrated.

5. A surface-emitting semiconductor optical amplifier according to claim 1, characterized in that, The active region is a quantum dot active region or a quantum well active region.

6. A surface-emitting semiconductor optical amplifier according to claim 1, characterized in that, The substrate is a GaAs or GaN substrate.

7. A surface-emitting semiconductor optical amplifier according to claim 1, characterized in that, An N-type DBR is disposed between the substrate and the active region, and a P-type DBR is disposed between the P-side insulating layer and the active region.

8. A method of using a surface-emitting semiconductor optical amplifier as described in any one of claims 1-7, characterized in that, Includes the following steps: S100. A driving voltage is applied between the N-side discharge electrode and the P-side discharge electrode. A dielectric barrier discharge occurs between the N-side discharge electrode and the P-side discharge electrode, breaking down the discharge gas near them to generate low-temperature plasma. Under the continuous action of the driving voltage, the low-temperature plasma diffuses from the periphery of the discharge cavity to the center, forming a full-diameter plasma electrode. S200, the low-temperature plasma contains a large number of freely moving electrons. During this diffusion process, electrons in the N-side discharge cavity enter the substrate through the leakage holes on the N-side insulating layer, flow through the active region, and enter the P-side discharge cavity through the leakage holes on the P-side insulating layer, forming a loop current. S300 When the seed light passes through the surface-emitting semiconductor optical amplifier, the active region undergoes stimulated emission under the action of the seed light, and the seed light is output after gaining.

9. The method of using a surface-emitting semiconductor optical amplifier according to claim 8, characterized in that, In step S300, an N-type DBR is disposed between the substrate and the active region, and a P-type DBR is disposed between the P-side insulating layer and the active region. The seed light is output after multiple reflections and gain through the two layers of mirrors, the P-type DBR and the N-type DBR.

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