Light detection structure, display panel and display device

Abstract

The present application relates to a kind of light detection structure, display panel and display device, light detection structure includes test circuit, reference circuit, signal processing module.Test circuit includes the light sensing transistor unit and auxiliary transistor unit in series;Reference circuit includes reference transistor unit;The equivalent resistance of light sensing transistor unit, auxiliary transistor unit and reference transistor unit is same;The control end of test circuit and the control end of reference circuit are connected, and the signal input end of test circuit and the signal input end of reference circuit are connected;Signal processing module includes first input end and second input end, and first input end is electrically connected to the signal output end of light sensing transistor unit;Second input end is electrically connected to the signal output end of reference transistor unit.In the above setting, by setting and the equivalent resistance of light sensing transistor unit same auxiliary transistor unit and reference transistor unit, so that the signal obtained by signal processing module is not affected by process, increase stability.

Description

Technical Field

[0001] This invention relates to, but is not limited to, the field of display technology, and particularly to a light detection structure, a display panel, and a display device. Background Technology

[0002] With the widespread use of LCD (Liquid Crystal Display) panels, more and more electronic devices using LCD panels are equipped with light sensors (also known as ambient light sensors) to adjust the brightness of the LCD panel according to the ambient light level, thereby saving power and providing users with a better visual experience.

[0003] However, due to the drift in the photoelectric curve characteristics of the photoelectric sensor, there is a large error in the detection accuracy. Summary of the Invention

[0004] The purpose of this application is to provide a light detection structure, a display panel, and a display device that can improve detection accuracy.

[0005] According to a first aspect of the embodiments of this application, a light detection structure is provided, the light detection structure comprising:

[0006] The test circuit includes a photosensitive transistor unit and an auxiliary transistor unit connected in series. The photosensitive transistor unit is used to receive ambient light signals, and the auxiliary transistor unit is protected from light. When the illumination conditions of the photosensitive transistor unit and the auxiliary transistor unit are the same, their equivalent resistance values ​​are the same. The control terminal of the photosensitive transistor unit is connected to the control terminal of the auxiliary transistor unit. A reference circuit is included, and the signal input terminal of the reference circuit is connected to the signal input terminal of the test circuit.

[0007] The signal processing module includes a first input terminal and a second input terminal, which is used to compare the signals of the first input terminal and the second input terminal; the first input terminal is electrically connected to the signal output terminal of the photosensitive transistor unit; and the second input terminal is electrically connected to a reference circuit.

[0008] Furthermore, the test circuit and the reference circuit are both connected to the data terminal, and the electrical signal obtained at the second input terminal of the signal processing module is the electrical signal output by the data terminal.

[0009] The reference circuit includes a reference transistor unit, which is light-shielded;

[0010] When the illumination conditions of the photosensitive transistor unit, the auxiliary transistor unit, and the reference transistor unit are the same, their equivalent resistance values ​​are the same; and the control terminal of the test circuit is connected to the control terminal of the reference circuit.

[0011] Furthermore, there are multiple reference transistor units connected in series; and the number of reference transistors is the same as the sum of the number of photosensitive transistor units and auxiliary transistor units in the test transistor.

[0012] The number of transistor units between the first input terminal and the control terminal of the test circuit is the same as the number of transistor units between the second input terminal and the control terminal of the reference circuit.

[0013] Furthermore, the number of reference transistors is different from the sum of the number of photosensitive transistor units and auxiliary transistor units in the test transistor;

[0014] The number of transistor units between the first input terminal and the control terminal of the test circuit may be the same as or different from the number of transistor units between the second input terminal and the control terminal of the reference circuit.

[0015] Furthermore, the number of auxiliary transistor units is multiple. A photosensitive transistor unit and an auxiliary transistor unit are provided between the first input terminal and the control terminal of the test circuit, or only a photosensitive transistor unit is provided between the first input terminal and the control terminal of the test circuit.

[0016] Furthermore, the signal processing module includes operational amplifiers.

[0017] Furthermore, the minimum distance between the photosensitive transistor unit and the adjacent auxiliary transistor unit is less than or equal to 10 mm; and / or, the minimum distance between the test line and the reference line is less than or equal to 10 mm.

[0018] According to a second aspect of the embodiments of this application, a display panel is provided, the display panel including a light detection structure.

[0019] Furthermore, the display panel includes a display area and a non-display area, and the display panel further includes a driving control layer. The light detection structure is disposed on the driving control layer and located in the non-display area; and / or,

[0020] The display panel includes an outer light-shielding layer, which is disposed above the light detection structure. The outer light-shielding layer has a through-hole for light transmission, and the orthographic projection of the photosensitive transistor unit on the outer light-shielding layer falls into the through-hole.

[0021] Furthermore, the display panel also includes a backlight assembly and a color filter, the color filter being disposed on the side of the photosensitive transistor unit away from the backlight assembly.

[0022] Furthermore, there are multiple light detection structures, and each light detection structure has a color filter disposed on a photosensitive transistor unit.

[0023] The colors of the color filters on at least two of the aforementioned light detection structures are different.

[0024] According to a third aspect of the embodiments of this application, a display device is provided, the display device including a display panel.

[0025] The beneficial technical effects of the technical solutions provided in this application are:

[0026] In this application, by setting auxiliary transistor units and reference transistor units with the same equivalent resistance value as the photosensitive transistor units, the signal obtained by the signal processing module is not affected by the manufacturing process, thereby increasing the stability of the signal. Attached Figure Description

[0027] To more clearly illustrate the technical solutions in the embodiments of this disclosure, the accompanying drawings used in the following description of the embodiments will be briefly introduced. Obviously, the accompanying drawings described below are only some embodiments of this disclosure. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0028] Figure 1 This is a circuit diagram of an optical detection structure.

[0029] Figure 2 This is a photoelectric curve diagram of a display panel.

[0030] Figure 3 This is a photoelectric curve graph for multiple display panels.

[0031] Figure 4 This is a circuit diagram of an optical detection structure according to an embodiment of the present invention.

[0032] Figure 5 This is a circuit diagram of a light detection structure according to another embodiment of the present invention.

[0033] Figure 6 This is a circuit diagram of an optical detection structure according to another embodiment of the present invention.

[0034] Figure 7 This is a circuit diagram of an optical detection structure according to another embodiment of the present invention.

[0035] Figure 8 This is a circuit diagram of an optical detection structure according to another embodiment of the present invention.

[0036] Figure 9This is a schematic diagram of the structure of a display panel according to an embodiment of the present invention.

[0037] Figure 10 This is a circuit diagram of an optical detection structure according to another embodiment of the present invention.

[0038] Explanation of reference numerals in the attached figures

[0039] Display panel 10

[0040] Display area 11

[0041] Non-display area 12

[0042] Optical detection structure 20

[0043] Test line 100

[0044] Photosensitive transistor unit 110

[0045] Auxiliary transistor unit 120

[0046] Baseline 200

[0047] Reference transistor unit 210

[0048] Signal processing module 400

[0049] Operational amplifier 410

[0050] First input terminal 411

[0051] Second input terminal 412

[0052] Signal output terminal 413

[0053] Digital-to-analog converter 420

[0054] Data terminal 500

[0055] Drive control terminal 600

[0056] First signal line 710

[0057] Second signal line 720 Detailed Implementation

[0058] Exemplary embodiments will now be described in detail, examples of which are illustrated in the accompanying drawings. When the following description relates to the drawings, unless otherwise indicated, the same numerals in different drawings denote the same or similar elements. The embodiments described in the following exemplary embodiments do not represent all embodiments consistent with the present invention. Rather, they are merely examples of apparatuses and methods consistent with some aspects of the invention as detailed in the appended claims.

[0059] The terminology used in this application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. Unless otherwise defined, the technical or scientific terms used in this application should be understood in their ordinary sense by one of ordinary skill in the art to which this invention pertains. The words “a” or “one” and similar terms used in this application specification and claims do not indicate a limitation of quantity, but rather indicate the presence of at least one. “A plurality” means two or more. The words “comprising” or “including” and similar terms mean that the element or object preceding “comprising” or “including” covers the element or object listed following “comprising” or “including” and its equivalents, and does not exclude other elements or objects. The words “connected” or “linked” and similar terms are not limited to physical or mechanical connections and can include electrical connections, whether direct or indirect. The words “above” and / or “below” and similar terms are for ease of description only and are not limited to a location or spatial orientation. The singular forms “a,” “the,” and “the” used in this application specification and appended claims are also intended to include the plural forms, unless the context clearly indicates otherwise. It should also be understood that the term “and / or” as used herein refers to and includes any or all possible combinations of one or more associated listed items.

[0060] This application discloses a display device including a display panel. The display panel, from bottom to top, includes a backlight assembly, a driving control layer, a first electrode layer, a liquid crystal deflection module, a second electrode layer, and a light filter. The backlight assembly emits light in a direction pointing towards the light filter. The driving control layer is electrically connected to the first electrode layer to control the potential difference between the first and second electrode layers, i.e., to control the potential difference applied to the liquid crystal deflection module, thereby controlling the deflection direction of the liquid crystal in the liquid crystal deflection module, and thus determining whether the light emitted by the backlight assembly can pass through the liquid crystal deflection module to reach the light filter and be emitted outwards for capture by the user.

[0061] This display panel can be used in display devices such as mobile phones, computers, tablets, and smartwatches.

[0062] To reduce power consumption, increase standby time, and protect eyesight, existing display devices incorporate a light detection structure to detect ambient light. This structure detects the brightness or color temperature of the ambient light source and transmits the detected information to a processor. The processor then readjusts and outputs the brightness and color temperature of the display device based on the ambient light's brightness and color temperature, essentially readjusting the potential difference across the liquid crystal deflection module. For example, when the ambient light is bright, the user's pupils open less, allowing less light to enter the eyes. In this case, the display panel's brightness needs to be increased to ensure the user can clearly see the displayed content. Conversely, when the ambient light is dim, the user's pupils open more, allowing more light to enter the eyes. In this case, the display panel's brightness needs to be decreased to prevent eye strain from excessive light entering the eyes.

[0063] like Figure 1 As shown, in one design, the light detection structure includes a photosensitive transistor unit 1, a reference transistor unit 2, and a signal processing module 3.

[0064] The control terminals of photosensitive transistor unit 1 and reference transistor unit 2 are connected to receive the same drive signal VGS. The signal input terminals of photosensitive transistor unit 1 and reference circuit 2 are connected to receive the same data signal VDD. Signal processing module 3 includes a first input terminal and a second input terminal, which are respectively connected to the signal output terminals of photosensitive transistor unit 1 and reference circuit 2. The voltage at the first input terminal is taken as V1, and the voltage at the second input terminal is taken as V2. Photosensitive transistor unit 1 is used to receive ambient light signals, while reference transistor unit 2 is light-shielded.

[0065] When both the photosensitive transistor unit 1 and the reference transistor unit 2 are simultaneously given a drive signal VG and a data signal VD, the current (IDS) of the photosensitive transistor unit 1 and the reference transistor unit 2 is calculated using the following formula:

[0066]

[0067] Where μFE represents the carrier mobility determined by the electric field effect, and its value is affected by temperature and illumination. Cox represents the capacitance per unit area of ​​the gate oxide film, and its value is relatively fixed for the same transistor. W / L represents the channel width / channel length, and its value is relatively fixed for the same transistor.

[0068] Since the equivalent resistance R of photosensitive transistor unit 1 and reference transistor unit 2 is the same, it means that their Cox and W / L are the same. Furthermore, since they are close to each other, the ambient temperature of their environments can be considered the same. Therefore, the difference in IDS between the two is affected by the illumination conditions. Correspondingly, V1 = IDS1 × R, V1 = IDS2 × R.

[0069] When phototransistor unit 1 is not illuminated, the IDS corresponding to phototransistor unit 1 and reference transistor unit 2 are the same, that is, IDS1 = IDS2, then V1 = V2.

[0070] When photosensitive transistor unit 2 is illuminated, IDS1 on photosensitive transistor unit 1 is greater than IDS2 on reference transistor unit 2, that is, IDS1 is greater than IDS2, so V1 = IDS1 × R > V2 = IDS2 × R.

[0071] When signal processing module 3 includes an operational amplifier and a digital-to-analog converter (ADC), the signal output terminal of the operational amplifier is electrically connected to the signal input terminal of the ADC. The electrical signal output by the operational amplifier is A×(V1-V2)=A×R(ISD1-ISD2). Where A is the gain of the operational amplifier 410.

[0072] The curves of ambient illuminance and ADC acquisition values ​​obtained through the above method are shown below. Figure 2 As shown, the controller and signal processing module are electrically connected to receive sampled values ​​from the digital-to-analog converter and control the drive control layer to apply different voltages to the liquid crystal deflection layer based on the sampled values, thereby adjusting the display panel to display different brightness levels.

[0073] However, the inventors discovered through experiments that the three factors μFE, Cox, and W / L are affected by process drift, resulting in significant differences in the IDS values ​​of the same transistors in different display panels 10. The inventors tested three different display panels 10, and the curves of ambient illuminance and ADC acquisition values ​​are shown below. Figure 3 Therefore, this necessitates adjusting the photoelectric curve of each display panel 10 before shipment, and it is also impossible to guarantee against photoelectric curve drift caused by changes in ambient temperature after shipment.

[0074] To solve the above problems, the inventor made the following improvements:

[0075] Specifically, such as Figure 4 and Figure 5 As shown, the optical detection structure 20 includes a test circuit 100, a reference circuit 200, and a signal processing module 400.

[0076] The test circuit 100 includes a photosensitive transistor unit 110 and an auxiliary transistor unit 120 connected in series. The photosensitive transistor unit 110 receives ambient light signals, while the auxiliary transistor unit 120 is protected from light. When the illumination conditions are the same, the equivalent resistance values ​​of the photosensitive transistor unit 110 and the auxiliary transistor unit 120 are the same. The control terminals of the photosensitive transistor unit 110 and the auxiliary transistor unit 120 are connected, meaning that the control terminals (gates) of both units are connected to the same drive control terminal 600 to synchronously obtain the drive signal VGS, enabling synchronous on / off switching. The photosensitive transistor unit 110 and the auxiliary transistor unit 120 are connected in series and then connected to the data terminal 500 to obtain the data signal VDD.

[0077] The signal processing module 400 includes a first input terminal 411 and a second input terminal 412, and is used to compare the signals from the first input terminal 411 and the second input terminal 412. The first input terminal 411 is electrically connected to the signal output terminal 413 of the phototransistor unit 110. The second input terminal 412 is electrically connected to the reference line 200.

[0078] by Figure 4 The illustrated embodiment shows that the photosensitive transistor unit 110 includes a photosensitive transistor unit 110 (hereinafter referred to as M1) and an auxiliary transistor unit 120 (hereinafter referred to as M2) connected in series.

[0079] Assume the equivalent resistance of M1 is Roff1, the equivalent resistance of M2 is Roff2, and the equivalent resistance of M3 is Roff3. The voltage at the end where the first signal line 710 and the test line 100 are in contact (i.e., the position between M1 and M2) is taken as V1, that is, the voltage received by the first input terminal 411 of the signal processing module 400 is V1.

[0080] When M1 is not illuminated, the IDS corresponding to M1 and M2 are the same. Because IDS and (Roff is the equivalent resistance of the transistor unit) are directly proportional, so Roff1 = Roff2. In other words, when the data terminal outputs a voltage VDD of 500, the relationship between V1 and V2 is as follows:

[0081] V2 = mVDD (the data for m depends on the specific structure of the reference line 200, which will be explained in detail below).

[0082] When M1 is illuminated, the leakage current of ISD1 corresponding to M1 increases, and the mobility of μFE carriers increases. When the data terminal outputs a voltage VDD of 500, due to IDS and (Roff is the equivalent resistance of the transistor unit) is proportional. At this time, the relationship between the equivalent resistance Roff1 of M1 and the equivalent resistance Roff2 of M2 is as follows:

[0083]

[0084] V1=VDD×Roff2 / (Roff1+Roff2)=VDD×μFE1 / (μFE1+μFE2);

[0085] According to the above derivation formula, by adding an auxiliary transistor unit 120 with the same equivalent resistance value as the photosensitive transistor unit 110 under the same illumination conditions to the light detection structure 20, the parameters affecting the V1 value are simplified, so that they are only affected by the μFE carrier mobility. The process factor on the same display panel 10 is eliminated, so that the input voltage signal and the output voltage signal obtained by the signal processing module 400 are only related to the μFE carrier mobility after illumination and the controllable VDD. This avoids unexpected drift of the photoelectric curves of different display panels 10 and avoids unexpected drift of the photoelectric curves of the display panel 10 due to changes in ambient temperature when using one end.

[0086] Specifically, such as Figure 5 As shown, the reference line 200 may not contain any components. In this case, the test line 100 and the reference line 200 are connected to the data terminal 500. The electrical signal obtained by the second input terminal 412 of the signal processing module 400 is the electrical signal output by the data terminal 500. In other words, the voltage of V2 is always VDD. When M1 is not illuminated:

[0087] V2 = VDD (at this point, m mentioned above is 1);

[0088] When M1 is illuminated;

[0089] V1=VDD×Roff2 / (Roff1+Roff2)=VDD×μFE1 / (μFE1+μFE2), V2=VDD;

[0090]

[0091] Combination Figure 4 and Figure 6As shown, the reference circuit 200 includes a reference transistor unit 210. The photosensitive transistor unit 110, the auxiliary transistor unit 120, and the reference transistor unit 210 have the same equivalent resistance. It should be noted that "same resistance" here means that when the illumination conditions of the photosensitive transistor unit 110, the auxiliary transistor unit 120, and the reference transistor unit 210 are the same, their equivalent resistance values ​​are the same. In other words, when the illumination conditions are the same, the corresponding values ​​of the three factors μFE, Cox, and W / L are the same. Simultaneously, the control terminal of the test circuit 100 is connected to the control terminal of the reference circuit 200. That is, the control terminals of the photosensitive transistor unit 110, the auxiliary transistor unit 120 in the test circuit 100, and the reference transistor unit 210 in the reference circuit 200 are all connected to the same data terminal 500 to synchronously obtain the drive signal VGS. The signal input terminal of the test circuit 100 is connected to the signal input terminal of the reference circuit 200 and is also connected to the drive control terminal 600 to synchronously obtain the same data signal VDD, achieving synchronous opening and closing.

[0092] The first input terminal 411 of the signal processing module 400 is electrically connected to the signal output terminal 413 of the photosensitive transistor unit 110 via the first signal line 710, i.e., directly (refer to...) Figure 4 ) or indirectly (refer to) Figure 6 The first signal line 710 is connected between the photosensitive transistor unit 110 and the auxiliary transistor unit 120. In other words, one end of the first signal line 710 is directly or indirectly electrically connected between the signal output terminal 413 of the photosensitive transistor unit 110 and the auxiliary transistor unit 120, and the other end is connected to the first input terminal 411 of the signal processing module 400. The second input terminal 412 of the signal processing module 400 is electrically connected to the signal output terminal 413 of the reference transistor unit 210 via the second signal line 720. In other words, one end of the second signal line 720 is electrically connected to the signal output terminal 413 of the reference transistor unit 210, and the other end is connected to the second input terminal 412 of the signal processing module 400.

[0093] By setting an auxiliary transistor unit 120 and a reference transistor unit 210 with the same equivalent resistance as the photosensitive transistor unit 110, the signal obtained by the signal processing module 400 can also be made unaffected by the manufacturing process, thereby increasing the stability of the signal.

[0094] by Figure 4 According to the corresponding embodiment, the photosensitive transistor unit 110 includes one photosensitive transistor unit 110 (hereinafter referred to as M1) connected in series and an auxiliary transistor unit 120 (hereinafter referred to as M2). The auxiliary transistor unit 120 includes two reference transistor units 210 connected in series (hereinafter referred to as M3 and M4, respectively).

[0095] Assume the equivalent resistance of M1 is Roff1, the equivalent resistance of M2 is Roff2, and the equivalent resistance of M3 is Roff3. The voltage at the end where the first signal line 710 contacts the test line 100 (i.e., the position between M1 and M2) is taken as V1, which is the voltage received by the first input terminal 411 of the signal processing module 400. The voltage at the end where the second signal line 720 contacts the reference line 200 (i.e., the position between M3 and M4) is taken as V2, which is the voltage received by the second input terminal 412 of the signal processing module 400.

[0096] As mentioned earlier, when M1 is not illuminated, the relationship between V1 and V2 is as follows:

[0097]

[0098] (At this point, m mentioned above is) ).

[0099] In this embodiment, the signal processing module 400 includes an operational amplifier 410, which also includes a signal output terminal 413. At this time, the voltage U0 output by the signal output terminal 413 is 0.

[0100] As mentioned earlier, when M1 is illuminated,

[0101] V1=VDD×Roff2 / (Roff1+Roff2)=VDD×μFE1 / (μFE1+μFE2);

[0102]

[0103] After processing by operational amplifier 410, the voltage output at signal output terminal 413 is:

[0104]

[0105] According to the above derivation formula, by adding an auxiliary transistor unit 120 with the same equivalent resistance value as the photosensitive transistor unit 110 under the same illumination conditions to the photodetector structure 20, the process factor on the same display panel 10 is eliminated. This makes the input voltage signal and output voltage signal obtained by the signal processing module 400 only related to the μFE carrier mobility after illumination and the controllable VDD. This avoids unexpected drift of the photoelectric curves of different display panels 10 and avoids unexpected drift of the photoelectric curves caused by changes in ambient temperature during use of the display panel 10.

[0106] It should be noted that "when M1 is not illuminated" mentioned above should be understood as "when the light signal received by the phototransistor unit 110 is less than or equal to a threshold," in which case the voltage signal on the first input terminal 411 is equal to the voltage signal on the second input terminal 412. "When M1 is illuminated" should be understood as "when the light signal received by the phototransistor unit 110 is greater than a threshold," in which case the voltage signal on the first input terminal 411 is greater than the voltage signal on the second input terminal 412. This threshold can be determined according to actual conditions, and the corresponding transistor unit can be selected or adjusted based on the determined value.

[0107] In the above configuration, there are multiple reference transistor units 210 connected in series. Furthermore, the number of reference transistors is the same as the sum of the number of photosensitive transistor units 110 and auxiliary transistor units 120 in the test transistors. The number of transistor units between the first input terminal 411 and the control terminal of the test line 100 is the same as the number of transistor units between the second input terminal 412 and the control terminal of the reference line 200. In this embodiment, by limiting the number of transistor units and the connection positions of the first signal line 710 and the second signal line 720, when M1 is not illuminated, V1 = V2, and the voltage U0 output by the operational amplifier 410 = 0. This facilitates the plotting and comparison of photoelectric curves.

[0108] exist Figure 4 In the corresponding embodiment, the number of transistor units between the first input terminal 411 and the control terminal of the test line 100 is the same as the number of transistor units between the second input terminal 412 and the control terminal of the reference line 200.

[0109] Of course, in other embodiments, the number of transistor units between the first input terminal 411 and the control terminal of the test line 100 may differ from the number of transistor units between the second input terminal 412 and the control terminal of the reference line 200. For example:

[0110] like Figure 7 and Figure 8 As shown, the test circuit 100 contains two transistor units: one photosensitive transistor unit 110 and one auxiliary transistor unit 120. The reference circuit 200 contains three reference transistor units 210.

[0111] At this time, if the connection relationship between the first signal line 710 and the second signal line 720 is as follows: Figure 7 As shown. When M1 is not illuminated,

[0112] (At this point, m mentioned above is) ),

[0113] When M1 is illuminated

[0114]

[0115] At this time, if the connection relationship between the first signal line 710 and the second signal line 720 is as follows: Figure 8 As shown. When M1 is not illuminated,

[0116] (At this point, m mentioned above is) ),

[0117] When M1 is illuminated

[0118]

[0119] Similarly, the number of reference transistor units 210 in reference circuit 200 is 4, 5, or 6 or more.

[0120] Similarly, in Figure 4 In the corresponding embodiment, only an auxiliary transistor unit 120 is provided between the first input terminal 411 and the control terminal of the test line 100.

[0121] Of course, in other embodiments, the number of auxiliary transistor units 120 can also be multiple. In addition to photosensitive transistor units 110, auxiliary transistor units 120 are also provided between the first input terminal 411 and the control terminal of the test line 100. For example... Figure 6 As shown, when M1 is not illuminated, When M1 is illuminated, V1 = VDD × μFE1 / (μFE1 + μFE2 + μFE3).

[0122] Through extensive experimentation, the inventors discovered that μFE is affected not only by illumination conditions but also by temperature. To reduce the impact of temperature on the μFE of different transistor units and improve the accuracy of illumination detection, the inventors further investigated the following: They found that when the minimum distance between the photosensitive transistor unit 110 and the adjacent auxiliary transistor unit 120 is less than or equal to 10 mm, the ambient temperature of the photosensitive transistor unit 110 and the adjacent auxiliary transistor unit 120 can be largely guaranteed to be the same. Therefore, even if temperature affects μFE, the V1 ratio will not be significantly affected, thus ensuring detection accuracy. If a reference transistor unit 210 is provided in the reference circuit 200, the minimum distance between the test circuit 100 and the reference circuit 200 must be less than or equal to 10 mm. That is, the minimum distance between the reference transistor unit 210 and the adjacent photosensitive transistor unit 110 or auxiliary transistor unit 120 must be less than or equal to 10 mm.

[0123] Furthermore, the inventors discovered that traditional display devices employ a discrete ambient light sensor solution, which integrates components such as the light detection structure and camera module, and places the integrated components within holes in the display area of ​​the display panel. This structure has poor aesthetics.

[0124] To address this problem, the inventors made the following improvements:

[0125] like Figure 9 As shown, the display panel 10 includes a display area 11 and a non-display area 12. The light detection structure 20 is disposed on the driving control layer and located in the non-display area 12. Through the above arrangement, the light detection structure 20 is integrated into the non-display area 12, avoiding excessive exposure of the light detection and improving the overall aesthetics.

[0126] In addition, the display panel 10 includes an inner light-shielding layer and an outer light-shielding layer. The inner light-shielding layer is disposed on the side of the test line 100 and the reference line 200 closer to the backlight assembly to prevent the light emitted by the backlight assembly from affecting the transistor units. The outer light-shielding layer is disposed above the light detection structure 20, that is, on the side of the test line 100 and the reference line 200 away from the backlight assembly. Simultaneously, a through-hole is formed in the outer light-shielding layer, and the orthographic projection of the photosensitive transistor unit 110 on the outer light-shielding layer falls into the through-hole, thereby preventing ambient light from shining on the auxiliary transistor unit 120 and the reference transistor unit 210, i.e., the aforementioned light-shielding treatment. At the same time, it ensures that the photosensitive crystal can receive ambient light signals through the through-hole.

[0127] Furthermore, the light detection structure 20 can not only detect the brightness of ambient light and adjust the brightness of the display panel 10 based on the detection results, but also detect the color temperature. Specifically, a color filter can be added to the side of the phototransistor unit 110 away from the backlight assembly. This color filter is located in the light-transmitting hole, or the orthographic projection of the light-transmitting hole along the thickness direction is located in the color filter, so that ambient light first passes through the color filter for filtering before entering the phototransistor unit 110, thereby realizing the detection of color temperature.

[0128] Meanwhile, there are multiple light detection structures 20, and each light detection structure 20 has a color filter on its photosensitive transistor unit 110. At least two light detection structures 20 have color filters of different colors. For example, there can be four light detection structures 20, one of which does not have a color filter, while the other three have red, blue, and green filters respectively. By using multiple photosensitive transistor units 110 to detect the color temperature and brightness of different colors, color temperature compensation is achieved, thereby improving the display effect.

[0129] It should be noted that the transistor units mentioned above are not composed of a single transistor TFT, but rather multiple TFTs connected in parallel (see reference). Figure 10 As shown, Figure 10 (A simplified illustration of the TFT in a phototransistor is provided.) This method increases the area of ​​the transistor unit, thereby enhancing its sensitivity to light signals.

[0130] In this application, the structural embodiments and method embodiments described can complement each other without conflict.

[0131] In this invention, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance. The terms "multiple" and "several" refer to two or more unless otherwise expressly defined.

[0132] Other embodiments of the invention will readily occur to those skilled in the art upon consideration of the specification and practice of the disclosure herein. The invention is intended to cover any variations, uses, or adaptations of the invention that follow the generality of the invention and include, but are not disclosed herein, common knowledge or customary techniques in the art. The specification and examples are to be considered exemplary only, and the true scope and spirit of the invention are indicated by the following claims.

[0133] It should be understood that the present invention is not limited to the precise structure described above and shown in the accompanying drawings, and various modifications and changes can be made without departing from its scope. The scope of the invention is limited only by the appended claims.

Claims

1. A light detection structure, characterized in that, The optical detection structure includes: The test circuit includes a photosensitive transistor unit and an auxiliary transistor unit connected in series. The photosensitive transistor unit is used to receive ambient light signals, and the auxiliary transistor unit is protected from light. When the illumination conditions of the photosensitive transistor unit and the auxiliary transistor unit are the same, their equivalent resistance values ​​are the same. The control terminals of the photosensitive transistor unit and the auxiliary transistor unit are connected. The reference circuit includes multiple reference transistor units connected in series, wherein the reference transistor units are protected from light; the signal input terminal of the reference circuit is connected to the signal input terminal of the test circuit; when the illumination conditions of the photosensitive transistor unit, the auxiliary transistor unit, and the reference transistor unit are the same, the equivalent resistance values ​​of the three are the same; and the control terminal of the test circuit is connected to the control terminal of the reference circuit. The signal processing module includes a first input terminal and a second input terminal for comparing the signals at the first input terminal and the second input terminal; the first input terminal is electrically connected to the signal output terminal of the photosensitive transistor unit; when the number of reference transistor units is two or three, the second input terminal is electrically connected to any two adjacent reference transistor units connected in series in the reference circuit.

2. The optical detection structure as described in claim 1, characterized in that, The test circuit and the reference circuit are both connected to the data terminal, and the electrical signal obtained at the second input terminal of the signal processing module is the electrical signal output by the data terminal.

3. The optical detection structure as described in claim 1, characterized in that, The number of reference transistors is the same as the sum of the number of photosensitive transistor units and auxiliary transistor units in the test transistor; The number of transistor units between the first input terminal and the control terminal of the test circuit is the same as the number of transistor units between the second input terminal and the control terminal of the reference circuit.

4. The optical detection structure as described in claim 3, characterized in that, When the light signal received by the phototransistor unit is less than or equal to the threshold, the voltage signal on the first input terminal is equal to the voltage signal on the second input terminal; When the light signal received by the phototransistor unit is greater than the threshold, the voltage signal at the first input terminal is greater than the voltage signal at the second input terminal.

5. The optical detection structure as described in claim 1, characterized in that, The number of reference transistors is different from the sum of the number of photosensitive transistor units and auxiliary transistor units in the test transistor; The number of transistor units between the first input terminal and the control terminal of the test circuit may be the same as or different from the number of transistor units between the second input terminal and the control terminal of the reference circuit.

6. The optical detection structure as described in claim 1, characterized in that, The number of auxiliary transistor units is multiple. A photosensitive transistor unit and an auxiliary transistor unit are provided between the first input terminal and the control terminal of the test circuit. Alternatively, only a photosensitive transistor unit is provided between the first input terminal and the control terminal of the test circuit.

7. The optical detection structure as described in claim 1, characterized in that, The minimum distance between the photosensitive transistor unit and the adjacent auxiliary transistor unit is less than or equal to 10 mm; and / or, The minimum distance between the test line and the reference line is less than or equal to 10 mm.

8. A display panel, characterized in that, The display panel includes the light detection structure as described in any one of claims 1-7.

9. The display panel as described in claim 8, characterized in that, The display panel includes a display area and a non-display area, and the display panel further includes a driving control layer. The light detection structure is disposed on the driving control layer and located in the non-display area; and / or, The display panel includes an outer light-shielding layer, which is disposed above the light detection structure. The outer light-shielding layer has a through-hole for light transmission, and the orthographic projection of the photosensitive transistor unit on the outer light-shielding layer falls into the through-hole.

10. The display panel as claimed in claim 8, characterized in that, The display panel also includes a backlight assembly and a color filter, the color filter being disposed on the side of the photosensitive transistor unit away from the backlight assembly.

11. The display panel as claimed in claim 10, characterized in that, The number of the light detection structures is multiple, and each of the light detection structures has a color filter disposed on a photosensitive transistor unit. The colors of the color filters on at least two of the aforementioned light detection structures are different.

12. A display device, characterized in that, The display device includes a display panel as described in any one of claims 8-11.

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