Microfluidic chips and microfluidic systems

Abstract

This application belongs to the field of microfluidics technology, specifically relating to a microfluidic chip and a microfluidic system. The microfluidic chip is used to detect the position of a droplet. The microfluidic chip includes a first substrate; the first substrate includes a first base and a detection area disposed on the first substrate. The detection area includes: a moving area, in which the droplet can move; and a non-moving area disposed outside the moving area, wherein a limiting unit is provided, which can limit the movement of the droplet within the moving area. The microfluidic chip in this application can prevent droplet deviation, reduce droplet loss, and improve the detection accuracy of the microfluidic chip.

Description

Technical Field

[0001] This application belongs to the field of microfluidics technology, specifically relating to a microfluidic chip and a microfluidic system. Background Technology

[0002] Microfluidic technology is characterized by the manipulation of fluids at the micrometer scale. It integrates multiple steps in biological, chemical, and medical analysis processes onto a single micrometer-scale chip, automating the entire analytical process. Due to the powerful integration capabilities of microfluidic chips, they offer advantages such as high analysis speed, low loss, low material consumption, and minimal pollution during sample processing, demonstrating immense promise in numerous fields including biomedical research, drug synthesis and screening, environmental monitoring and protection, health quarantine, forensic identification, and the detection of biological reagents.

[0003] Microfluidic chips can automatically prepare and manipulate samples in droplet form, primarily utilizing the dielectric wetting effect to drive droplet movement. In applications of the dielectric wetting effect, the dielectric layer is crucial. However, droplets are prone to deviation during movement within microfluidic chips, leading to droplet loss and inaccurate detection by the microfluidic chip. Summary of the Invention

[0004] The purpose of this application is to solve the problem in the prior art that droplets are prone to deviation in microfluidic chips, resulting in droplet loss and inaccurate detection by microfluidic chips.

[0005] This application provides a microfluidic chip for detecting the position of a droplet, the microfluidic chip including a first substrate; the first substrate including a first sub-substrate and a detection region disposed on the first substrate, the detection region including:

[0006] A moving region in which the droplet can move;

[0007] A non-moving zone is provided outside the moving zone. The non-moving zone is provided with a limiting unit, which can limit the movement of the droplet within the moving zone.

[0008] In one exemplary embodiment of this application, the first substrate further includes a plurality of first electrodes arranged in an array in the row direction and the column direction;

[0009] The movable area is provided with a plurality of first electrodes, the movable area extends in the row direction and / or the column direction, and the non-movable area is located at the diagonal of the first electrodes.

[0010] In an exemplary embodiment of this application, the limiting unit is an augmentation layer, which is disposed on the first substrate and located in the non-moving region, wherein the film thickness of the moving region is lower than the film thickness in the non-moving region.

[0011] In one exemplary embodiment of this application, the first substrate further includes:

[0012] A driving layer is disposed on the first substrate, and the driving layer is provided in both the moving region and the non-moving region;

[0013] A first insulating layer is disposed on the first substrate and covers the driving layer. A first electrode is disposed on the side of the first insulating layer away from the first substrate. A via is provided on the first insulating layer located in the moving region. The first electrode is electrically connected to the driving layer through the via. The first insulating layer is provided in both the moving region and the non-moving region.

[0014] A second insulating layer is disposed on the side of the first insulating layer away from the first substrate and covers the first electrode. The second insulating layer is provided in both the moving region and the non-moving region.

[0015] The augmentation layer is disposed on the side of the second insulating layer away from the first substrate, and the orthographic projection of the augmentation layer on the first substrate overlaps with the orthographic projection of the first electrode located in the non-moving region on the first substrate.

[0016] In one exemplary embodiment of this application, the augmentation layer is at least one of an organic layer, a metal layer, and an inorganic layer.

[0017] In one exemplary embodiment of this application, the driving layer is a first metal layer, and the first insulating layer covers the first metal layer. Within the moving region, the first electrode is connected to the first metal layer through a via on the first insulating layer.

[0018] In an exemplary embodiment of this application, the driving layer is a first transistor, which includes a first gate, a first source, a first drain, and a first active layer. The first source and the first drain are respectively disposed at both ends of the first active layer and electrically connected to the first active layer. The first electrode is connected to the first drain.

[0019] In one exemplary embodiment of this application, the first substrate further includes a reinforcement layer disposed on the first substrate and located at the moving region, wherein the film thickness of the moving region is higher than that of the non-moving region;

[0020] The limiting unit is a second transistor, which is electrically connected to a first electrode located in the non-moving region. The first electrode in the non-moving region can drive the droplet back to the moving region.

[0021] In one exemplary embodiment of this application, the limiting unit is a blocking member;

[0022] One of the first substrate and the second substrate is provided with the blocking member, the blocking member abuts against both the first substrate and the second substrate, and the orthogonal projection of the blocking member on the first substrate is located within the non-moving area.

[0023] A second aspect of this application provides a microfluidic system, including the microfluidic chip described in any of the preceding claims.

[0024] The microfluidic chip and microfluidic system of this application have at least the following beneficial effects:

[0025] The microfluidic chip of this application includes a first substrate, which includes a first ground layer and a detection area disposed on the first ground layer. The detection area can detect the position of a droplet to obtain the position of the droplet in real time. The detection area includes a moving area and a non-moving area. The droplet can move within the moving area, and the non-moving area is disposed outside the moving area. A limiting unit is provided within the non-moving area to limit the movement of the droplet within the moving area, preventing the droplet from moving to the non-moving area, reducing droplet loss, and ensuring the detection accuracy of the microfluidic chip.

[0026] Other features and advantages of this application will become apparent from the following detailed description, or may be learned in part from practice of this application.

[0027] It should be understood that the above general description and the following detailed description are exemplary and explanatory only, and do not limit this application. Attached Figure Description

[0028] The accompanying drawings, which are incorporated in and form part of this specification, illustrate embodiments consistent with this application and, together with the description, serve to explain the principles of this application. It is obvious that the drawings described below are merely some embodiments of this application, and those skilled in the art can obtain other drawings based on these drawings without any inventive effort.

[0029] Figure 1 A cross-sectional structural schematic diagram of the microfluidic chip provided in Embodiment 1 or Embodiment 9 of this application is shown.

[0030] Figure 2 The diagram shows the arrangement of the moving and non-moving regions of the first substrate provided in Embodiments 1 to 9 of this application.

[0031] Figure 3 A cross-sectional schematic diagram of the organic layer used in the heightening layer provided in Embodiment 1 or Embodiment 9 of this application is shown.

[0032] Figure 4 The diagram shows a cross-sectional view of the second substrate provided in Embodiments 1 to 9 of this application.

[0033] Figure 5 A cross-sectional structural diagram of the augmented layer using a second metal layer is shown in Embodiment 2 or Embodiment 9 of this application.

[0034] Figure 6 A cross-sectional schematic diagram of the height-increasing layer using an inorganic layer is shown in Embodiment 3 or Embodiment 9 of this application.

[0035] Figure 7 The diagram shows a cross-sectional view of the layered structure of an organic layer and a second metal layer provided in Embodiment 5 or Embodiment 9 of this application.

[0036] Figure 8 The diagram shows a cross-sectional view of the layered structure of the height-increasing layer provided in Embodiment 5 or Embodiment 9 of this application, which employs an inorganic layer and a second metal layer.

[0037] Figure 9 The diagram shows a cross-sectional view of the layered structure of organic and inorganic layers provided in Embodiment 5 or Embodiment 9 of this application.

[0038] Figure 10 The diagram shows a cross-sectional view of the layered structure of an organic layer, a second metal layer, and an inorganic layer provided in Embodiment 5 or Embodiment 9 of this application.

[0039] Figure 11 This illustration shows a cross-sectional view of a droplet disposed between a first substrate and a second substrate, as provided in Embodiment Six or Embodiment Nine of this application.

[0040] Figure 12 This illustration shows a cross-sectional structural diagram of a first transistor as the driving layer, provided in Embodiment Six or Embodiment Nine of this application.

[0041] Figure 13 A cross-sectional structural diagram of the augmented layer using a second metal layer is shown in Embodiment 6 or Embodiment 9 of this application.

[0042] Figure 14 A cross-sectional schematic diagram of the height-increasing layer using an inorganic layer is shown in Embodiment 6 or Embodiment 9 of this application.

[0043] Figure 15The diagram shows a cross-sectional view of the layered structure of an organic layer and a second metal layer provided in Embodiment 6 or Embodiment 9 of this application.

[0044] Figure 16 The diagram shows a cross-sectional view of the layered structure of the height-enhancing layer provided in Embodiment 6 or Embodiment 9 of this application, which employs an inorganic layer and a second metal layer.

[0045] Figure 17 The diagram shows a cross-sectional view of the layered structure of organic and inorganic layers provided in Embodiment 6 or Embodiment 9 of this application.

[0046] Figure 18 The diagram shows a cross-sectional view of the layered structure of an organic layer, a second metal layer, and an inorganic layer provided in Embodiment 6 or Embodiment 9 of this application.

[0047] Figure 19 This illustration shows a cross-sectional structure of a droplet located between a first substrate and a second substrate, as provided in Embodiment 7 or Embodiment 9 of this application.

[0048] Figure 20 This illustration shows a cross-sectional structural diagram of a moving region with a film thickness higher than that of a non-moving region, provided in Embodiment 7 or Embodiment 9 of this application.

[0049] Figure 21 A cross-sectional structural diagram of a non-moving area with a blocking member provided in Embodiment 8 or Embodiment 9 of this application is shown.

[0050] Explanation of reference numerals in the attached figures:

[0051] 100. Microfluidic chips;

[0052] 110. First substrate; 111. First substrate; 112. Moving region; 112a. First moving region; 112b. Second moving region; 1121. Third metal block; 1122. Fourth metal block; 113. Non-moving region; 1131. First metal block; 1132. Second metal block; 114. First electrode;

[0053] 115. Driver layer; 1150. First metal layer; 1151. First transistor; 11510. First gate; 11511. First active layer; 11512. First source; 11513. First drain; 1152. Second transistor; 11520. Second gate; 11521. Second active layer; 11522. Second source; 11523. Second drain;

[0054] 116. First insulating layer; 1160. First via; 1161. Fourth via; 117. Second insulating layer; 1170. Second via; 1171. Third via; 1172. Fifth via; 118. Reinforcing layer; 118a. Organic layer; 118b. Second metal layer; 118c. Inorganic layer; 119. First hydrophobic layer; 1110. Third insulating layer; 1120. Barrier element;

[0055] 120, Second substrate; 121, Second substrate; 122, Second electrode; 123, Second hydrophobic layer; 200, Droplet. Detailed Implementation

[0056] Exemplary embodiments will now be described more fully with reference to the accompanying drawings. However, these exemplary embodiments can be implemented in many forms and should not be construed as limited to the examples set forth herein; rather, these embodiments are provided to make this application more comprehensive and complete, and to fully convey the concept of the exemplary embodiments to those skilled in the art.

[0057] In this application, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this application, "multiple" means two or more, unless otherwise explicitly specified.

[0058] In this application, unless otherwise expressly specified and limited, the terms "assembly," "connection," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this application according to the specific circumstances.

[0059] Furthermore, the described features, structures, or characteristics can be combined in any suitable manner in one or more embodiments. Numerous specific details are provided in the following description to give a thorough understanding of embodiments of this application. However, those skilled in the art will recognize that the technical solutions of this application can be practiced without one or more of the specific details, or other methods, components, apparatuses, steps, etc., can be employed. In other instances, well-known methods, apparatuses, implementations, or operations are not shown or described in detail to avoid obscuring various aspects of this application.

[0060] Example 1

[0061] Figure 1A schematic cross-sectional view of the droplet structure between the first and second substrates is shown.

[0062] Embodiment 1 of this application provides a microfluidic chip 100, which can be used as a carrier for the manipulation of droplets 200. The droplets 200 can undergo a series of operations within the microfluidic chip 100, such as movement, separation, or mixing. The microfluidic chip 100 can also be used to detect the position of the droplets 200 in real time, so as to accurately and quickly obtain the position of the droplets 200 within the microfluidic chip 100.

[0063] It is understood that, in the exemplary embodiments, the droplet 200 may be a cell, protein, chromosome, or other liquid substance in solution in biological tissue, which will not be listed here.

[0064] In some embodiments of this application, see Figure 1 As shown, the microfluidic chip 100 includes a first substrate 110 and a second substrate 120 arranged opposite to and parallel to each other. The first substrate 110 and the second substrate 120 are spaced apart by a predetermined distance to form a receiving cavity. A droplet 200 can be accommodated in this receiving cavity, and the droplet 200 is in contact with the surfaces of the first substrate 110 and the second substrate 120 respectively.

[0065] It should be noted that liquid can be injected into the containment cavity through the droplet 200 inlet of the microfluidic chip 100.

[0066] In some embodiments of this application, the first substrate 110 and the second substrate 120 can be fixed relative to each other by a frame. The frame can be rectangular, circular, or other shapes, and it can be formed by multiple frame strips joined end to end, and disposed on the outer edge of the microfluidic chip 100. The frame strips can be connected by adhesive or snap-fit, or they can be an integral structure.

[0067] It is understood that in other exemplary embodiments, the first substrate 110 and the second substrate 120 may also be fixed relative to each other by a sealing adhesive.

[0068] In some embodiments of this application, the height between the first substrate 110 and the second substrate 120 may be greater than the height of the droplet 200 in the thickness direction of the first substrate 110 or the second substrate 120, so as to ensure that the droplet 200 can move within the receiving cavity and avoid jamming. Here, the thickness direction of the first substrate 110 or the second substrate 120 refers to the direction from the first substrate 110 to the second substrate 120.

[0069] In some embodiments of this application, the first substrate 110 includes a transparent first substrate 111, which serves as a platform for forming various functional layers of the first substrate 110. The second substrate 120 includes a transparent second substrate 121, which serves as a platform for forming various functional layers of the second substrate 120.

[0070] In some embodiments of this application, both the first substrate 111 and the second substrate 121 can be rigid substrates made of glass or quartz, or flexible substrates made of materials such as polyimide (PI), which will not be listed here.

[0071] In some embodiments of this application, the first substrate 110 further includes a detection area and a non-detection area disposed on the first substrate 111. The detection area is used to detect the droplet 200, and the non-detection area is disposed around the outer edge of the detection area.

[0072] Figure 2 A schematic diagram of the arrangement structure of the moving area and the non-moving area of ​​this application is shown.

[0073] Among them, see Figure 2 As shown, the detection area includes a moving area 112 and a non-moving area 113. The moving area 112 can be used for the movement of the droplet 200, and the non-moving area 113 is located outside the moving area 112.

[0074] In some embodiments of this application, the non-moving area 113 is provided with a limiting unit. The limiting unit can limit the movement of the droplet 200 within the moving area 112 and prevent it from moving towards the non-moving area 113, thereby confining the droplet 200 within the moving area 112. This prevents the droplet 200 from deviating from its intended path, avoids droplet 200 loss, and enables real-time detection of the droplet 200's position, ensuring the detection accuracy of the microfluidic chip 100.

[0075] Figure 3 A schematic diagram of the cross-sectional structure of the moving area and the non-moving area is shown. Figure 4 A schematic cross-sectional view of the second substrate is shown.

[0076] In some embodiments of this application, the first substrate 110 further includes a first electrode layer disposed on the side of the first substrate 111 facing the second substrate 121. See also Figure 2 As shown, the first electrode layer includes a plurality of first electrodes 114 arranged in an array in the row direction X and the column direction Y, with adjacent first electrodes 114 spaced apart from each other and insulated from each other.

[0077] In some embodiments of this application, see Figure 4As shown, the second substrate 120 also includes a transparent second electrode layer disposed on the side of the second substrate 121 facing the first substrate 111. The second electrode layer includes a second electrode 122. The second electrode 122 can be designed with a full-surface design to reduce the cost of fabricating the second electrode 122, thereby reducing the overall cost of the microfluidic chip 100.

[0078] It should be noted that the first electrode 114 can be a transparent electrode or an opaque electrode, and the specific design can be different according to different embodiments.

[0079] In some embodiments of this application, the first electrode 114 and the second electrode 122 may be made of transparent conductive materials such as indium tin oxide (ITO), zinc tin oxide (ZTO), zinc oxide (ZnO), indium zinc oxide (IZO), and gallium indium tin oxide (GIZO), which will not be listed here.

[0080] The droplet 200 can be driven to move within the containment cavity by changing the voltage difference between adjacent first electrodes 114.

[0081] It should be noted that the principle by which the droplet 200 moves within the containment cavity based on the voltage difference formed between adjacent first electrodes 114 is called dielectric electrowetting technology. Dielectric electrowetting technology refers to the technology of manipulating the droplet 200 by applying a voltage signal to change the contact angle of the droplet 200 on the dielectric surface, causing the droplet 200 to undergo asymmetrical deformation, thereby generating internal force.

[0082] In some embodiments of this application, see Figure 2 As shown, the moving area 112 is provided with a plurality of first electrodes 114 to drive the droplet 200 to move within the moving area 112 in order to detect the position of the droplet 200 in real time.

[0083] In some embodiments of this application, the droplet 200 can move in the row direction X or the column direction Y, that is, the moving area 112 extends in the row direction X or the column direction Y.

[0084] It should be noted that in some other embodiments, the droplet 200 may also move in other directions, such as obliquely.

[0085] In some embodiments of this application, the detection area includes a plurality of first moving areas 112a arranged at intervals in the row direction X and second moving areas 112b arranged at intervals in the column direction Y. The first moving areas 112a and the second moving areas 112b are arranged to cross each other, and the droplet 200 can move within the first moving area 112a or the second moving area 112b.

[0086] In some embodiments of this application, see Figure 2As shown, when the first substrate 110 is observed from a top-down perspective, the first electrode 114 has a square structure, and a non-moving area 113 is provided on the outer side of the first electrode 114.

[0087] In some embodiments of this application, see Figure 2 As shown, non-moving regions 113 are provided at the four opposite corners of the first electrode 114. The limiting unit in the non-moving region 113 can restrict the droplet 200 from moving toward the non-moving region 113 when it moves toward the non-moving region 113, that is, it moves in an oblique direction. This ensures that the droplet 200 can continuously move within the first moving region 112a and the second moving region 112b, avoids droplet 200 loss, and thus ensures the detection accuracy of the microfluidic chip 100.

[0088] It is understandable that the droplet 200 flows into or out of the microfluidic chip 100 through the droplet 200 inlet and outlet. Therefore, a limiting unit may not be provided at the diagonal of the first electrode 114 at the droplet 200 inlet and outlet to ensure that the droplet 200 can effectively enter or exit the first moving area 112a or the second moving area 112b.

[0089] In addition, the limiting units at opposite corners of adjacent first electrodes 114 can be shared to reduce the space occupied by the non-moving area 113 and increase the range of the detection area.

[0090] In some embodiments of this application, please refer to... Figure 2 As shown, the non-moving region 113 is located at a position where the first moving region 112a and the second moving region 112b do not overlap, that is, at the four opposite corners of the first electrode 114. This ensures that when the droplet 200 moves within the first moving region 112a, the limiting unit in the non-moving region 113 can restrict the droplet 200. At the same time, it also ensures that when the droplet 200 moves within the second moving region 112b, the limiting unit in the non-moving region 113 can also restrict the droplet 200, preventing the droplet 200 from moving obliquely upward, reducing droplet loss, and ensuring the detection effect of the microfluidic chip 100.

[0091] In other words, non-moving areas 113 are arranged at the four opposite corners of the first electrode 114, and limiting units are set in the non-moving areas 113. This can restrict the droplets 200 on the first electrode 114 from moving towards the four opposite corners of the upper left, lower left, upper right and lower right, and restrict the droplets 200 to move within the moving areas 112, thereby avoiding the loss of droplets 200 and ensuring the detection effect of the microfluidic chip 100.

[0092] In some embodiments of this application, see Figure 1 and Figure 3As shown, the first substrate 110 also includes a driving layer 115, a first insulating layer 116, and a second insulating layer 117.

[0093] See Figure 1 or Figure 3 As shown, the driving layer 115 is disposed on the side of the first electrode layer near the first substrate 111.

[0094] Please continue reading Figure 3 As shown, a first insulating layer 116 covers a driving layer 115. A first via 1160 is provided on the first insulating layer 116 located in the moving region 112. A first electrode 114 is provided on the side of the first insulating layer 116 away from the first substrate 111. A portion of the first electrode 114 fills the first via 1160 so that the first electrode 114 is electrically connected to the driving layer 115, so that the first electrode 114 can receive the driving voltage of the driving layer 115 to change the voltage magnitude of the first electrode 114, thereby changing the contact angle on the first electrode 114 and controlling the droplet 200 to move in the moving region 112.

[0095] Understandably, please continue to see Figure 3 As shown, by adding a first insulating layer 116 between the driving layer 115 and the first electrode 114, crosstalk between the driving layer 115 and the first electrode 114 can be avoided, ensuring that the voltage on the first electrode 114 remains normal, thus ensuring that the contact angle on the first electrode 114 is normal, and thereby ensuring that the droplet 200 moves normally in the moving area 112.

[0096] Please continue reading Figure 3 As shown, the second insulating layer 117 is disposed on the side of the first insulating layer 116 away from the first substrate 111, and covers the first electrode 114.

[0097] The first insulating layer 116 and the second insulating layer 117 can be made of the same material. For example, both the first insulating layer 116 and the second insulating layer 117 can be formed by inorganic insulating materials or organic insulating materials, such as resin.

[0098] In some embodiments of this application, please refer to... Figure 3 As shown, both the moving region 112 and the non-moving region 113 include a driving layer 115, a first insulating layer 116, a first electrode 114, and a second insulating layer 117. The driving layer 115 in the moving region 112 is electrically connected to the first electrode 114 through a first via 1160 on the first insulating layer 116, while the driving layer 115 in the non-moving region 113 is not electrically connected to the first electrode 114.

[0099] In some embodiments of this application, please refer to... Figure 3As shown, the limiting unit is a layer 118, which is disposed on the first substrate 111 and located in the non-moving region 113. The layer 118 allows the film thickness in the non-moving region 113 to be higher than the film thickness in the moving region 112. Thus, when the droplet 200 moves to the non-moving region 113, the limiting effect of the layer 118 keeps the droplet 200 within the moving region 112, preventing it from veering off course and avoiding droplet loss, thus ensuring the detection performance of the microfluidic chip 100.

[0100] In other words, please continue to see Figure 3 As shown, since an additional layer 118 is added in the non-moving area 113, the height of the four diagonal points of the first electrode 114 is higher than the height inside the first electrode 114. This can prevent the droplet 200 from flowing obliquely, confine the droplet 200 within the moving area 112, prevent the droplet 200 from flowing obliquely, and reduce the loss of the droplet 200.

[0101] In some embodiments of this application, please refer to... Figure 3 As shown, the augmentation layer 118 in the non-moving region 113 can be disposed on the side of the second insulating layer 117 away from the first substrate 111, and the orthographic projection of the augmentation layer 118 on the first substrate 111 and the orthographic projection of the first electrode 114 located in the non-moving region 113 on the first substrate 111 have at least an overlapping area, so that the film height in the non-moving region 113 can be the sum of the driving layer 115, the first insulating layer 116, the first electrode 114, the second insulating layer 117 and the augmentation layer 118, so that the film height in the non-moving region 113 is higher than the sum of the heights of the driving layer 115, the first insulating layer 116, the first electrode 114 and the second insulating layer 117 in the moving region 112, thereby confining the droplet 200 within the moving region 112, preventing the droplet 200 from tilting and moving, and reducing the loss of the droplet 200.

[0102] It can be seen that the membrane height in the non-moving region 113 is greater than that in the moving region 112 by the thickness of the layer 118, which makes the membrane thickness in the non-moving region 113 higher than that in the moving region 112. This ensures that the droplet 200 remains within the moving region 112 and does not deviate at an angle, thus preventing droplet 200 loss and ensuring the detection effect of the microfluidic chip 100.

[0103] It should be noted that in some other embodiments, the augmentation layer 118 may also be disposed at other film layer locations, for example, the augmentation layer 118 may be disposed on the side of the first electrode 114 near the first substrate 111. The augmentation layer 118 is sufficient to increase the height of the non-moving region 113.

[0104] In some embodiments of this application, please refer to... Figure 3As shown, the augmentation layer 118 can be an organic layer 118a. The organic layer 118a is disposed on the side of the second insulating layer 117 away from the first substrate 111, and the orthographic projection of the organic layer 118a on the first substrate 111 is located within the orthographic projection of the first electrode 114 on the first substrate 111, so that the height in the non-moving region 113 is higher than the height in the moving region 112, thereby preventing the droplet 200 from sliding obliquely, reducing the loss of the droplet 200, and ensuring the detection accuracy of the microfluidic chip 100.

[0105] The organic layer 118a can be made of soluble polytetrafluoroethylene (PFA) or polyimide (PI). Of course, other organic materials can also be used for this organic layer 118a, as long as they can increase the height of the non-moving region 113.

[0106] It is worth mentioning that, in some embodiments of this application, the microfluidic chip 100 can use a passive driving method to drive the droplet 200 to move within the moving region 112.

[0107] For example, please continue to see Figure 3 As shown, the driving layer 115 is a metal electrode prepared by patterning a first metal layer 1150. This metal electrode is electrically connected to an external driving voltage. The metal electrodes correspond one-to-one with the first electrodes 114. The metal electrode located in the moving region 112 is electrically connected to the first electrode 114 through a first via 1160, while the metal electrode in the non-moving region 113 is separated from the first electrode 114 by a first insulating layer 116, and the two are mutually insulated.

[0108] The difference between the moving region 112 and the non-moving region 113 is that the non-moving region 113 is provided with an organic layer 118a, which increases the height of the non-moving region 113 and effectively confines the droplet 200 within the moving region 112, preventing the droplet 200 from deviating and reducing the loss of the droplet 200.

[0109] It is worth mentioning that the difference in film thickness between the moving region 112 and the non-moving region 113 can be prepared using a halftone mask.

[0110] In some embodiments of this application, please refer to... Figure 3 As shown, the first substrate 110 further includes a first hydrophobic layer 119, and the second substrate 120 further includes a second hydrophobic layer 123. The first hydrophobic layer 119 is disposed on the side of the second insulating layer 117 away from the first substrate 111 and covers the organic layer 118a. The second hydrophobic layer 123 is disposed on the side of the second electrode 122 away from the second substrate 121.

[0111] It should be noted that the first hydrophobic layer 119 and the second hydrophobic layer 123 are arranged opposite to each other and spaced apart. The droplet 200 is located between the first hydrophobic layer 119 and the second hydrophobic layer 123. The first hydrophobic layer 119 and the second hydrophobic layer 123 are used to prevent the droplet 200 from adhering too much to the first substrate 110 and the second substrate 120, thereby helping the droplet 200 to move within the cavity.

[0112] In an exemplary embodiment, the first hydrophobic layer 119 and the second hydrophobic layer 123 may be made of the same material, such as Teflon.

[0113] In some embodiments of this application, the microfluidic chip 100 can be a digital microfluidic chip 100, thereby enabling more precise manipulation of the droplets 200.

[0114] Example 2

[0115] Figure 5 A schematic diagram of the structure in which the augmented layer employs a second metal layer is shown.

[0116] The difference between Embodiment 2 and Embodiment 1 in this application is that the augmented layer 118 uses a second metal layer 118b, such as... Figure 5 As shown.

[0117] In some embodiments of this application, the second metal layer 118b is disposed on the side of the second insulating layer 117 away from the first substrate 111, and the second metal layer 118b is covered by the first hydrophobic layer 119. The second metal layer 118b can increase the film thickness at the non-moving region 113 to avoid the droplets 200 flowing obliquely, reduce the loss of droplets 200, and ensure the detection effect of the microfluidic chip 100.

[0118] It should be noted that the second metal layer 118b can be made of metals such as aluminum (Al), magnesium (Mg), and silver (Ag).

[0119] Example 3

[0120] Figure 6 A schematic diagram of a structure using an inorganic layer is shown.

[0121] The difference between Embodiment 3 and Embodiments 1 and 2 of this application is that the layer 118 is made of inorganic layer 118c, such as... Figure 6 As shown.

[0122] In some embodiments of this application, the inorganic layer 118c is disposed on the side of the second insulating layer 117 away from the first substrate 111, and the inorganic layer 118c is covered by the first hydrophobic layer 119. The inorganic layer 118c can increase the film thickness at the non-moving region 113 to avoid the oblique flow of droplets 200, reduce droplet loss, and ensure the detection effect of the microfluidic chip 100.

[0123] The inorganic layer 118c can be made of materials such as silicon oxide, silicon nitride, and aluminum oxide.

[0124] Example 4

[0125] The difference between Embodiment 4 and Embodiments 1 to 3 is that the layer 118 can adopt a multi-layer stacked structure.

[0126] In one example, the second insulating layer 117 has multiple layers of organic layers 118a arranged in sequence, and the first hydrophobic layer 119 covers the multiple organic layers 118a. The multiple layers of organic layers 118a can increase the height within the non-moving area 113, thereby preventing the droplets 200 from flowing obliquely, reducing droplet loss, and ensuring the detection effect of the microfluidic chip 100.

[0127] In another example, the second insulating layer 117 has multiple layers of second metal layers 118b arranged in sequence, and the first hydrophobic layer 119 covers the multiple layers of second metal layers 118b. The multiple layers of second metal layers 118b can increase the height within the non-moving area 113, thereby preventing the droplets 200 from flowing obliquely, reducing droplet loss, and ensuring the detection effect of the microfluidic chip 100.

[0128] In another example, the second insulating layer 117 has multiple inorganic layers 118c arranged in a sequentially stacked manner, and the first hydrophobic layer 119 covers the multiple inorganic layers 118c. The multiple inorganic layers 118c arranged in a sequentially stacked manner can increase the height within the non-moving area 113, thereby preventing the droplets 200 from flowing obliquely, reducing droplet loss, and ensuring the detection effect of the microfluidic chip 100.

[0129] Example 5

[0130] Figure 7 A schematic diagram of a superimposed structure of an organic layer and a second metal layer is shown. Figure 8 A schematic diagram of the stacked structure of the augmented layer using an inorganic layer and a second metal layer is shown. Figure 9 A schematic diagram of a superimposed structure of organic and inorganic layers is shown. Figure 10 A schematic diagram of the stacked structure of the augmented layer, consisting of an organic layer, a second metal layer, and an inorganic layer, is shown.

[0131] The difference between Embodiment 5 and Embodiments 1 to 4 is that the augmented layer 118 adopts a composite laminated structure.

[0132] An alternative embodiment is shown below. Figure 7 As shown, the augmentation layer 118 is a composite film layer consisting of a second metal layer 118b and an organic layer 118a. The order of the organic layer 118a and the second metal layer 118b can be designed according to different embodiments. For example, the second metal layer 118b can be disposed on the side of the organic layer 118a closer to the first substrate 111, that is, the second metal layer 118b can be disposed at the bottom of the organic layer 118a. The second metal layer 118b can also be disposed on the side of the first electrode 114 away from the first substrate 111. By using the superposition of the second metal layer 118b and the organic layer 118a, the height of the non-moving region 113 can be increased to avoid the oblique flow of the droplets 200, reduce the loss of the droplets 200, and ensure the detection effect of the microfluidic chip 100.

[0133] Another alternative embodiment is described in [reference needed]. Figure 9 As shown, the augmentation layer 118 is a composite film layer consisting of an organic layer 118a and an inorganic layer 118c. The order of the organic layer 118a and the inorganic layer 118c can be designed according to different embodiments. For example, the inorganic layer 118c is disposed on the side of the organic layer 118a closest to the first substrate 111, that is, the inorganic layer 118c is disposed at the bottom of the organic layer 118a, and the inorganic layer 118c is disposed on the side of the first electrode 114 away from the first substrate 111. By using the superposition of the inorganic layer 118c and the organic layer 118a, the height of the non-moving region 113 can be increased to avoid the oblique flow of the droplets 200, reduce the loss of the droplets 200, and ensure the detection effect of the microfluidic chip 100.

[0134] Another alternative embodiment, see Figure 8 As shown, the augmentation layer 118 is a composite film layer consisting of a second metal layer 118b and an inorganic layer 118c. The order of the second metal layer 118b and the inorganic layer 118c can be designed according to different embodiments. For example, the second metal layer 118b is disposed on the side of the inorganic layer 118c closer to the first substrate 111, that is, the second metal layer 118b is disposed at the bottom of the inorganic layer 118c, and the second metal layer 118b is disposed on the side of the first electrode 114 away from the first substrate 111. By using the superposition of the inorganic layer 118c and the second metal layer 118b, the height of the non-moving region 113 can be increased to avoid the oblique flow of the droplets 200, reduce the loss of the droplets 200, and ensure the detection effect of the microfluidic chip 100.

[0135] In another alternative embodiment, see Figure 10As shown, the augmentation layer 118 is a composite film layer consisting of an organic layer 118a, a second metal layer 118b, and an inorganic layer 118c. The order of the organic layer 118a, the second metal layer 118b, and the inorganic layer 118c can be designed according to different embodiments. For example, the second metal layer 118b is disposed on the side of the inorganic layer 118c closer to the first substrate 111, and the organic layer 118a is disposed on the side of the inorganic layer 118c away from the first substrate 111, that is, the inorganic layer 118c is disposed between the second metal layer 118b and the organic layer 118a, and the second metal layer 118b is disposed on the side of the first electrode 114 away from the first substrate 111. By using the stacked arrangement of the organic layer 118a, the second metal layer 118b, and the inorganic layer 118c, the height of the non-moving region 113 can be increased to avoid the oblique flow of the droplets 200, reduce the loss of the droplets 200, and ensure the detection effect of the microfluidic chip 100.

[0136] Example 6

[0137] Figure 11 A cross-sectional schematic diagram of the driving layer in the moving region using the first transistor is shown. Figure 12 A schematic diagram of an augmented layer using an organic layer is shown. Figure 13 A schematic diagram of the structure in which the augmented layer employs a second metal layer is shown. Figure 14 A schematic diagram of a structure using an inorganic layer is shown. Figure 15 A schematic diagram of a superimposed structure of an organic layer and a second metal layer is shown. Figure 16 A schematic diagram of the stacked structure of the augmented layer using an inorganic layer and a second metal layer is shown. Figure 17 A schematic diagram of a superimposed structure of organic and inorganic layers is shown. Figure 18 A schematic diagram of the stacked structure of the augmented layer, consisting of an organic layer, a second metal layer, and an inorganic layer, is shown.

[0138] The difference between Embodiment 6 and Embodiments 1 to 5 is that the driving layer 115 adopts a first transistor 1151, which can control the driving voltage of different first electrodes 114 according to the moving position of the droplet 200.

[0139] For example, the first transistor 1151 located in the moving region 112 includes a first gate 11510, a first active layer 11511, a first source 11512, and a first drain 11513, as shown below. Figure 11 and Figure 12 As shown.

[0140] like Figure 12As shown, a plurality of first gates 11510 and a plurality of scan lines are obtained by patterning the first metal layer 1150. The scan lines are electrically connected to the first gates 11510. The plurality of first gates 11510 are arranged on the side of the first substrate 111 facing the second substrate 120, and the plurality of first gates 11510 are spaced apart from each other. The first gates 11510 correspond one-to-one with the first electrodes 114.

[0141] like Figure 12 As shown, the first insulating layer 116 covers a plurality of first gates 11510. The first active layer 11511, the first source 11512 and the first drain 11513 are all disposed on the side of the first insulating layer 116 away from the first substrate 111. The first insulating layer 116 is used to isolate the first gates 11510 and the first active layer 11511 to avoid crosstalk between the first gates 11510 and the first active layer 11511.

[0142] like Figure 12 As shown, the first source 11512 and the first drain 11513, which are made of the third metal layer, are respectively disposed at both ends of the first active layer 11511 and electrically connected to the first active layer 11511 to transmit electrical signals.

[0143] like Figure 12 As shown, the second insulating layer 117 is disposed on the side of the first insulating layer 116 away from the first substrate 111, and covers the first active layer 11511, the first source 11512 and the first drain 11513. The second insulating layer 117 protects the lines such as the first active layer 11511, the first source 11512 and the first drain 11513.

[0144] like Figure 12 As shown, the first electrode 114 is disposed on the side of the second insulating layer 117 away from the first substrate 111, and a second via 1170 is formed on the second insulating layer 117 to expose the first drain 11513. A portion of the first electrode 114 is housed in the second via 1170 and contacts the first drain 11513 exposed by the second via 1170, so that the first electrode 114 is electrically connected to the first drain 11513, thereby allowing the first drain 11513 to provide a driving voltage to the first electrode 114.

[0145] like Figure 12 As shown, a third insulating layer 1110 is provided on the side of the second insulating layer 117 away from the first substrate 111, and the third insulating layer 1110 covers the first electrode 114.

[0146] like Figure 12As shown, in the non-moving region 113, the film layer sequence in the moving region 112 is also followed. That is, the non-moving region 113 includes a first metal block 1131 disposed on the same layer as the first gate 11510, a first insulating layer 116, a first active layer 11511, a second metal block 1132 disposed on the same layer as the first source 11512 and the first drain 11513, a second insulating layer 117, a first electrode 114 and a third insulating layer 1110.

[0147] And in the preparation process, such as Figure 12 As shown, after the first electrode 114 is fabricated, a layer 118 is fabricated on the non-moving region 113, and then a third insulating layer 1110 is fabricated, which covers the first electrode 114 and the layer 118.

[0148] Among them, such as Figures 12 to 18 As shown, the height-enhancing layer 118 can be the height-enhancing layer 118 in Embodiments 1 to 5, in order to increase the height of the non-moving area 113, so as to avoid the oblique flow of the droplets 200, reduce the loss of the droplets 200, and ensure the detection effect of the microfluidic chip 100.

[0149] It can be seen that the membrane height at the non-moving region 113 is higher than that at the moving region 112, in order to avoid the oblique flow of droplets 200, reduce droplet loss, and ensure the detection effect of microfluidic chip 100.

[0150] It is understandable that the first active layer 11511 in the moving area 112 and the first active layer 11511 in the non-moving area 113 are on the same layer and are spaced apart.

[0151] In this application, "same-layer configuration" refers to a layer structure formed using the same film deposition process to create a film layer for a specific pattern, and then using the same mask to form a single patterning process. That is, one patterning process corresponds to one mask (also called a photomask). Depending on the specific pattern, a single patterning process may include multiple exposure, development, or etching processes, and the specific pattern in the formed layer structure can be continuous or discontinuous. These specific patterns may also be at different heights or have different thicknesses. This simplifies the manufacturing process, saves manufacturing costs, and improves production efficiency.

[0152] In addition, the second metal block 1132 is disposed on the side of the first active layer 11511 in the non-moving region 113 away from the first substrate 111. That is, the film layers in the non-moving region 113 are stacked to increase the film layer height of the non-moving region 113, so that the film layer height of the non-moving region 113 is higher than the film layer height of the moving region 112.

[0153] Example 7

[0154] Figure 19 A schematic diagram of a structure in which a droplet is disposed between a first substrate and a second substrate is shown. Figure 20 A schematic diagram of a structure with a second transistor in the non-moving region is shown.

[0155] The difference between Embodiment 7 and Embodiments 1 to 6 is that the film height of the moving region 112 in Embodiment 7 is higher than that of the non-moving region 113, and a second transistor 1152 is provided in the non-moving region 113. A driving voltage different from that of the adjacent first electrode 114 is applied to the first electrode 114 connected to the second transistor 1152, so that the droplet 200 flows back into the moving region 112, thereby limiting the movement of the droplet 200 in the moving region 112.

[0156] See Figure 19 and Figure 20 As shown, the non-moving region 113 includes: a second gate 11520, a first insulating layer 116, a second active layer 11521, a second source 11522, a second drain 11523, a second insulating layer 117, a first electrode 114, and a third insulating layer 1110.

[0157] See Figure 20 As shown, the second gate 11520 is disposed on the first substrate 111, and the second gate 11520 corresponds one-to-one with the non-moving region 113.

[0158] See Figure 20 As shown, a first insulating layer 116 covers a second gate 11520, and a second active layer 11521 is disposed on the side of the first insulating layer 116 away from the first substrate 111. A second source 11522 and a second drain 11523 are respectively connected to the two ends of the second active layer 11521 in the non-moving region 113.

[0159] See Figure 20 As shown, the second insulating layer 117 is disposed on the side of the first insulating layer 116 away from the first substrate 111. The second insulating layer 117 is provided with a third via 1171, which exposes a portion of the second drain 11523. The first electrode 114 is disposed on the side of the second insulating layer 117 away from the first substrate 111. The first electrode 114 is connected to the drain through the third via 1171 to transmit a driving voltage, thereby driving the droplet 200 flowing into the non-moving region 113 back to the moving region 112, preventing the droplet 200 from deviating, reducing droplet 200 loss, and ensuring the detection effect of the microfluidic chip 100.

[0160] See Figure 20As shown, the moving area 112 includes: a third metal block 1121, a first insulating layer 116, a second active layer 11521, a fourth metal block 1122, a second insulating layer 117, a first electrode 114, and a third insulating layer 1110.

[0161] See Figure 20 As shown, the third metal block 1121 is disposed on the same layer as the second gate 11520 in the non-moving region 113. The first insulating layer 116 is disposed on the first substrate 111 and covers the first metal block 1131. A fourth via 1161 is provided on the first insulating layer 116.

[0162] See Figure 20 As shown, the second active layer 11521 is disposed on the side of the first insulating layer 116 away from the first substrate 111, and the second active layer 11521 in the moving region 112 and the second active layer 11521 in the non-moving region 113 are disposed on the same layer and spaced apart.

[0163] See Figure 20 As shown, the fourth metal block 1122 is disposed over the second active layer 11521, and the fourth metal block 1122 is disposed on the same layer as the second source 11522 and the second drain 11523 in the non-moving region 113, and the fourth metal block 1122 is electrically connected to the third metal block 1121 through the fourth via 1161.

[0164] See Figure 20 As shown, the second insulating layer 117 covers the fourth metal block 1122, and a fifth through hole 1172 is provided on the second insulating layer 117. The first electrode 114 is located on the side of the second insulating layer 117 away from the first substrate 111. The first electrode 114 is electrically connected to the fourth metal block 1122 through the fifth through hole 1172, so that the first electrode 114 is electrically connected to the third metal block 1121, so that it can receive the driving voltage on the third metal block 1121, change the contact angle on the first electrode 114, and thus drive the droplet 200 to move.

[0165] In this application, "same-layer configuration" refers to a layer structure formed using the same film deposition process to create a film layer for a specific pattern, and then using the same mask to form a single patterning process. That is, one patterning process corresponds to one mask (also called a photomask). Depending on the specific pattern, a single patterning process may include multiple exposure, development, or etching processes, and the specific pattern in the formed layer structure can be continuous or discontinuous. These specific patterns may also be at different heights or have different thicknesses. This simplifies the manufacturing process, saves manufacturing costs, and improves production efficiency.

[0166] It is understood that, in some embodiments of this application, see Figure 20As shown, the layer is a composite layer consisting of a second active layer 11521 and a fourth metal block 1122. Because the fourth metal block 1122 in the moving region 112 covers the second active layer 11521, the stacking height of the second active layer 11521 and the fourth metal block 1122 in the moving region 112 is higher than the stacking height of the second active layer 11521 and the second source electrode 11522 or the second drain electrode 11523 in the non-moving region 113, thus making the film height in the moving region 112 higher than the film height in the non-moving region 113.

[0167] In addition, the height of the layer in the moving area 112 can also adopt the design of the layer 118 in Embodiments 1 to 5, that is, the moving area 112 can be provided with at least one of the inorganic layer 118c, organic layer 118a, and metal layer to increase the height of the moving area 112, so that the height of the moving area 112 is higher than the height in the non-moving area 113, so that the droplets 200 that have moved out of or accidentally entered the non-moving area 113 can be controlled to move to the moving area 112.

[0168] It is worth mentioning that the difference in film thickness between the moving region 112 and the non-moving region 113 can be prepared using a halftone mask.

[0169] Example 8

[0170] Figure 21 A schematic diagram of a structure with a blocking element on the non-moving area is shown.

[0171] The difference between Embodiment 8 of this application and Embodiments 1 to 7 is as follows: Figure 21 As shown, the limiting unit is a blocking member 1120. The blocking member 1120 is provided on one of the first substrate 110 and the second substrate 120, and the two ends of the blocking member 1120 abut against the first substrate 110 and the second substrate 120 respectively. The orthographic projection of the blocking member 1120 on the first substrate 111 is located in the non-moving area 113. The blocking member 1120 is used to limit the droplet 200 in the moving area 112 to prevent the droplet 200 from deviating and reduce the loss of the droplet 200.

[0172] It should be noted that the blocking element 1120 may be made of oleophobic, hydrophobic or other materials that are not compatible with the droplet 200.

[0173] For example, a blocking member 1120 is provided on the first substrate 110. The upper and lower ends of the blocking member 1120 are in contact with the first substrate 110 and the second substrate 120 respectively to form a blocking wall, which can prevent the droplet 200 from entering the non-moving area 113, avoid the droplet 200 from deviating, reduce the loss of the droplet 200, and ensure the detection effect of the microfluidic chip 100.

[0174] In some embodiments of this application, the blocking member 1120 can be processed separately on the first substrate 110 or the second substrate 120, or it can be processed in the cell assembly process of the first substrate 110 and the second substrate 120.

[0175] Example 9

[0176] Embodiment 4 of this application provides a microfluidic system, which can be a Micro-Total Analysis System (MTAS). The MTAS can control the movement, separation, aggregation, chemical reactions, and biological detection of minute amounts of liquid droplets 200. The microfluidic system includes not only the aforementioned microfluidic chip 100 but may also include an optical unit.

[0177] The microfluidic chip 100 described above can be used to limit the movement of droplets 200 within the moving area 112 by the limiting unit in the non-moving area 113, thereby preventing droplets 200 from deviating, reducing droplet loss, and ensuring the detection effect of the microfluidic chip 100.

[0178] In the description of this specification, references to terms such as "some embodiments," "exemplarily," etc., indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of this application. The illustrative expressions of the above terms in this specification do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in a suitable manner in any one or more embodiments or examples. Moreover, without contradiction, those skilled in the art can combine and integrate the different embodiments or examples described in this specification, as well as the features of different embodiments or examples.

[0179] Although embodiments of this application have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting this application. Those skilled in the art can make changes, modifications, substitutions and variations to the above embodiments within the scope of this application. Therefore, any changes or modifications made in accordance with the claims and description of this application should fall within the scope of this patent application.

Claims

1. A microfluidic chip for detecting the position of a droplet, the microfluidic chip comprising a first substrate; characterized in that, The first substrate includes: First substrate, and A detection area is disposed on the first substrate. The detection area includes a moving area and a non-moving area. The droplet can move in the moving area. The non-moving area is disposed outside the moving area. The non-moving area is provided with a limiting unit, which can limit the movement of the droplet within the moving area. A driving layer is disposed on the first substrate, and the driving layer is provided in both the moving region and the non-moving region; A first insulating layer is disposed on the first substrate and covers the driving layer, and the first insulating layer is disposed in both the moving region and the non-moving region; A plurality of first electrodes are disposed on the side of the first insulating layer away from the first substrate, and a via is provided on the first insulating layer located in the moving region. The first electrodes are electrically connected to the driving layer through the via. The non-moving region is disposed at the diagonal of the first electrodes. A second insulating layer is disposed on the side of the first insulating layer away from the first substrate and covers the first electrode; the second insulating layer is provided in both the moving region and the non-moving region. The limiting unit is an augmentation layer, which is disposed on the side of the second insulating layer away from the first substrate and located in the non-moving region. The orthographic projection of the augmentation layer on the first substrate and the orthographic projection of the first electrode located in the non-moving region on the first substrate have at least an overlapping area, so that the film thickness of the moving region is lower than the film thickness of the non-moving region. A first hydrophobic layer is disposed on the side of the second insulating layer away from the first substrate and covers the augmentation layer.

2. The microfluidic chip according to claim 1, characterized in that, The first substrate further includes a plurality of first electrodes arranged in an array in the row and column directions; The moving area is provided with a plurality of the first electrodes, and the moving area extends in the row direction and / or the column direction.

3. The microfluidic chip according to claim 1 or 2, characterized in that, The augmentation layer is at least one of an organic layer, a metal layer, and an inorganic layer.

4. The microfluidic chip according to claim 3, characterized in that, The driving layer is a first metal layer, and the first insulating layer covers the first metal layer. Within the moving area, the first electrode is connected to the first metal layer through a via on the first insulating layer.

5. The microfluidic chip according to claim 3, characterized in that, The driving layer is a first transistor, which includes a first gate, a first source, a first drain, and a first active layer. The first source and the first drain are respectively disposed at both ends of the first active layer and electrically connected to the first active layer. The first electrode is connected to the first drain.

6. A microfluidic system, characterized in that, Includes the microfluidic chip according to any one of claims 1 to 5.

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