Packaging processing method of half-bridge structure and half-bridge packaged device

Abstract

The application discloses a packaging processing method of a half-bridge structure and a half-bridge packaged device. The packaging processing method comprises the following steps: using an adhesive material to bond a lead frame, a copper-coated ceramic substrate, a substrate power chip and an island power chip; after welding a metal wire, plastic packaging is performed to form a plastic package body; a pin isolation groove is formed on a side edge of the plastic package body between a first pin and a second pin; a heat dissipation fin is arranged on a back surface of the island of the lead frame; a long strip-shaped groove is formed on one side of the heat dissipation fin close to the first pin; after the plastic package body is subjected to electroplating tinning, the long strip-shaped groove is further cut to form a cutting groove; the cutting groove is cleaned and fixed in a jig, then liquid resin is filled, baking is performed to solidify the liquid resin, and a cutting rib forming process is performed. The packaging processing method can make the island and the pins realize different electrical functions after packaging is completed, can realize a half-bridge electrical structure without changing the packaging appearance, and can meet the requirement of a high creepage distance of a circuit.

Description

Technical Field

[0001] This invention relates to the field of semiconductor packaging technology, and in particular to a packaging process method and a half-bridge packaging device. Background Technology

[0002] In the semiconductor packaging field, there are two types of traditional power device half-bridge modules. One type connects the base island to the external pins, with the base island supported during manufacturing. This type of power device frame allows for the placement of the ceramic substrate and chip without the need for fixtures, but it requires at least five independent output pins (e.g., ...). Figure 1 As shown in the image, the external pins connected to the base island after packaging usually need to be cut off, resulting in significant copper waste. Another approach is to completely separate the base island and external pins, using a lamination fixture during the manufacturing process to reflow and connect the base island and external pins of the power frame onto a small ceramic substrate (e.g., ...). Figure 2 (As shown). However, this packaging method reduces the space available for placing the chip on the base island, making it impossible to package large IGBT chips. Furthermore, the complex packaging process and the variety of fixture types result in higher packaging costs. In addition, for products requiring high creepage distances (generally above 6.45mm), increasing the size of the molding compound is necessary, which alters the package appearance. Existing packaging technologies all have some insurmountable problems and defects. Summary of the Invention

[0003] This invention provides a packaging method and a half-bridge packaged device for a half-bridge structure, aiming to solve the problem in existing methods that cannot maintain the appearance of the device while achieving the packaging of the half-bridge structure.

[0004] In a first aspect, embodiments of this application provide a packaging method for a half-bridge structure, wherein the packaging method includes:

[0005] The copper-clad ceramic substrate is bonded and fixed to the base island of the lead frame using adhesive material. The power chip on the substrate is bonded and fixed to the copper-clad ceramic substrate using adhesive material. The power chip on the base island is bonded and fixed to the area on one side of the copper-clad ceramic substrate on the base island.

[0006] Metal bonding wires are soldered between the power chip on the substrate and the copper-clad ceramic substrate, the base island power chip and the lead frame, and between the base island power chip and the pins of the copper-clad ceramic substrate and the lead frame to achieve a half-bridge electrical connection.

[0007] The initial assembly of the welding wires is encapsulated using a molding die to form a molded body. The lead frame extends outward from the molded body to form multiple parallel pins. A pin isolation groove is formed on the side of the molded body between the first pin and the second pin. The lead frame is a heat sink on the back of the base island. An elongated groove is formed on the side of the heat sink near the first pin.

[0008] The molded body is electroplated with tin.

[0009] The connecting pieces of each pin in the long groove are further cut with a resin blade to cut off the connecting piece of the first pin and form a cutting pit that separates each pin from the lead frame.

[0010] After cleaning the debris in the cutting recess and washing it, the plastic sealant is placed in a fixture for fixation; the fixture has elastic protrusions at both ends of the elongated groove to seal the elongated groove;

[0011] The liquid resin filler is filled into the cutting recess and then placed in an oven to bake and cure.

[0012] The leads of the baked plastic package are trimmed and shaped to obtain the final half-bridge packaged device.

[0013] Secondly, embodiments of this application also provide a half-bridge packaged device, wherein the half-bridge packaged device is processed by the packaging process described in the first aspect above, and the half-bridge packaged device includes a lead frame, a copper-clad ceramic substrate, a substrate power chip, and a base island power chip.

[0014] Adhesive materials are provided between the lead frame and the copper-clad ceramic substrate, between the copper-clad ceramic substrate and the substrate power chip, and between the copper-clad ceramic substrate and the base island power chip.

[0015] Metal bonding wires for electrical connection are provided between the power chip on the substrate and the copper-clad ceramic substrate, the power chip on the base island and the lead frame, and between the power chip on the base island and the power chip on the copper-clad ceramic substrate and the lead frame.

[0016] The lead frame has a heat sink on one side away from the copper-clad ceramic substrate. The molding compound is wrapped around the outside of the lead frame to form a molding body. The lead frame extends outward from the molding body to form multiple parallel pins. The molding body has a pin isolation groove on the side between the first pin and the second pin. The back of the molding body has an elongated groove on the side of the heat sink near the pin.

[0017] The bottom surface of the elongated groove is provided with an inwardly recessed cutting pit, which separates the first pin from the lead frame; the cutting pit is provided with a curing material.

[0018] This invention provides a packaging method and a half-bridge packaged device. The packaging method includes bonding a lead frame, a copper-clad ceramic substrate, a substrate power chip, and a base island power chip using an adhesive material, soldering metal wires, and then molding to form a molded body. A pin isolation groove is formed on the side of the molded body between the first pin and the second pin. The lead frame is a heat sink on the back of the base island. An elongated groove is formed on the side of the heat sink near the first pin. After electroplating the molded body with tin, the elongated groove is further cut to form a cutting pit. The cutting pit is cleaned and fixed in a fixture, then filled with liquid resin, baked to cure the liquid resin, and then subjected to lead trimming and shaping. The above-described packaging method, without changing the traditional power lead frame and packaging process, forms pin isolation grooves through plastic encapsulation and mechanically cuts to form cutting pits. Liquid resin is then used to fill the cutting pits and baked to cure. This allows the base island and each pin to perform different electrical functions after packaging. It can achieve a half-bridge electrical structure without changing the package shape, while meeting the requirements for high creepage distance in the circuit. It can also maximize chip space utilization and save packaging processing costs. Attached Figure Description

[0019] To more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings used in the following description of the embodiments will be briefly introduced. Obviously, the drawings described below are some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0020] Figure 1 A structural diagram of a half-bridge packaged device fabricated using existing techniques;

[0021] Figure 2 Another structural diagram of a half-bridge packaged device fabricated using existing techniques;

[0022] Figure 3 A flowchart illustrating the packaging and fabrication method for a half-bridge structure provided in this embodiment of the invention;

[0023] Figure 4 This is an internal structure diagram of a half-bridge packaged device provided in an embodiment of the present invention;

[0024] Figure 5 The equivalent circuit structure diagram of the half-bridge packaged device provided in the embodiment of the present invention;

[0025] Figure 6This is a front view of the half-bridge packaged device provided in an embodiment of the present invention;

[0026] Figure 7 This is a side view of the half-bridge packaged device provided in an embodiment of the present invention;

[0027] Figure 8 This is a back view of the half-bridge packaged device provided in an embodiment of the present invention;

[0028] Figure 9 This is a cross-sectional structural diagram of a half-bridge packaged device provided in an embodiment of the present invention;

[0029] Figure 10 This is another cross-sectional view of the half-bridge packaged device provided in an embodiment of the present invention;

[0030] Figure 11 This is another cross-sectional structural diagram of the half-bridge packaged device provided in an embodiment of the present invention;

[0031] Figure 12 This is another front view of the half-bridge packaged device provided in an embodiment of the present invention;

[0032] Figure 13 This is a structural diagram of the fixture provided in an embodiment of the present invention;

[0033] Figure 14 This is a structural diagram of the half-bridge packaged device in use according to an embodiment of the present invention;

[0034] Figure 15 This is a schematic diagram illustrating the fabrication process of the half-bridge packaged device provided in an embodiment of the present invention.

[0035] Reference numerals: 1. Lead frame; 2. Copper-clad ceramic substrate; 3. Substrate power chip; 4. Base island power chip; 5. Adhesive material; 6. Metal bonding wire; 7. Cutting recess; 8. Fixture; 81. Elastic bump; 9. Curing material; 11. First pin; 12. Second pin; 13. Third pin; 14. Fourth pin; 21. Molding body; 22. Pin isolation groove; 23. Long strip groove; 15. Heat sink; 31. Molding mold. Detailed Implementation

[0036] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0037] It should be understood that, when used in this specification and the appended claims, the terms "comprising" and "including" indicate the presence of the described features, integrals, steps, operations, elements and / or components, but do not exclude the presence or addition of one or more other features, integrals, steps, operations, elements, components and / or collections thereof.

[0038] It should also be understood that the terminology used in this specification is for the purpose of describing particular embodiments only and is not intended to limit the invention. As used in this specification and the appended claims, the singular forms “a,” “an,” and “the” are intended to include the plural forms unless the context clearly indicates otherwise. It should also be understood that the term “and / or” as used in this specification and the appended claims refers to any combination and all possible combinations of one or more of the associated listed items, and includes such combinations.

[0039] Please see Figure 3 As shown in the figure, this application discloses a packaging method for a half-bridge structure, wherein the packaging method includes steps S110 to S180. The following packaging method is described using the packaging of a power device TO247 as an example, and the packaging method can also be extended to other devices.

[0040] S110. Use adhesive material to bond and fix the copper-clad ceramic substrate to the base island of the lead frame, use adhesive material to bond and fix the substrate power chip to the copper-clad ceramic substrate, and bond and fix the base island power chip to the area on the base island located on one side of the copper-clad ceramic substrate.

[0041] First, based on the half-bridge electrical principle, a high-insulation and high-thermal-conductivity copper-clad ceramic substrate 2 is designed for internal mounting. The front side of the copper-clad ceramic substrate 2 is electrically connected to components such as chips, and the back side is covered with a metal layer. The ceramic layer in the middle of the copper-clad ceramic substrate 2 needs to meet the application requirements of high insulation and high thermal conductivity.

[0042] The copper-clad ceramic substrate 2 is bonded and fixed to the base island of the lead frame 1 using adhesive material 5. The area on the lead frame 1 used to place various components and bonding wires is called the base island. The substrate power chip 3 is further bonded and fixed to the copper-clad ceramic substrate 2 using adhesive material 5. The base island power chip 4 is bonded and fixed to the area on one side of the copper-clad ceramic substrate 2 on the base island. The adhesive material 5 is a thermally and electrically conductive alloy adhesive, meaning it has high electrical and thermal conductivity. Adhesive residue is coated onto the solder layer on the back of the power chip and then bonded. The substrate power chip 3 can be an IGBT die or a SiC MOSFET die, etc., and the base island power chip 4 can be an IGBT die or a SiC MOSFET die, etc.

[0043] S120. Metal bonding wires are soldered between the power chip on the substrate and the copper-clad ceramic substrate, the base island power chip and the lead frame, and between the power chip on the base island and the copper-clad ceramic substrate and the lead frame to achieve a half-bridge electrical connection.

[0044] Wiring is performed according to the half-bridge electrical principle, and corresponding metal bonding wires 6 are soldered between the substrate power chip 3 and the copper-clad ceramic substrate 2, between the substrate power chip 3 and the base island power chip 4, and between the copper-clad ceramic substrate 2 and the lead frame 1, thereby achieving electrical connection of the relevant components. Similarly, metal bonding wires 6 can be soldered between the base island power chip 4 and the copper-clad ceramic substrate 2, and between the base island power chip 4 and the lead frame 1. After soldering all the metal bonding wires 6, the half-bridge electrical connection can be achieved. The specific connection structure is as follows. Figure 4 As shown. The equivalent circuit diagram obtained by the half-bridge electrical connection is as follows. Figure 5 As shown, where, Figure 4 The first pin 11 in the middle corresponds to Figure 5 (1) port in the middle; Figure 4 The second pin 12 in the middle corresponds to Figure 5 (2) port in the middle; Figure 4 The third pin 13 in the middle corresponds to Figure 5 (3) port in the middle; Figure 4 The fourth pin 14 in the middle corresponds to Figure 5 (4) ports; Figure 4 The metal layer of the copper-clad ceramic substrate serves as the ground plane, i.e., corresponding to... Figure 5 Port (5) in the middle. This processing step corresponds to Figure 15 Process (a) in the text.

[0045] S130. The initial assembly of the welding metal wires is encapsulated using a molding die to form a molded body. The lead frame extends outward from the molded body to form multiple parallel pins. The side of the molded body between the first pin and the second pin forms a pin isolation groove. The lead frame is a heat sink on the back of the base island. The side of the heat sink near the first pin forms an elongated groove.

[0046] After soldering the metal bonding wires 6, the initial assembly is obtained. The back of the lead frame 1 is a heat sink 15, which is exposed on the side of the molding compound. This heat sink can be used for heat dissipation of the device. In other embodiments, in order to increase the heat sink area and improve the heat dissipation effect of the device, a larger heat sink can be additionally attached to the back of the lead frame. Then, it is placed in the molding mold 31 for molding to form the molding compound 21. In the resulting molding compound 21, the lead frame 1 extends outward from the molding compound 21 to form multiple parallel pins, as shown in the specific structure. Figure 6 and Figure 7 As shown. The molding die 31 has a first protrusion corresponding to the pin isolation groove 22, thus forming the pin isolation groove 22 during the molding process. The molding die 31 also has a second protrusion corresponding to the elongated groove 23, thus forming the elongated groove 23 during the molding process. The width of the pin isolation groove 22 is 1 / 2 to 2 / 3 of the distance between the first pin 11 and the second pin 12, and the depth of the pin isolation groove is 1-2 mm. By setting the pin isolation groove 22, the creepage distance between the first pin 11 and the second pin 12, and between the pin tip and the heat sink 15 on the back of the lead frame, can be increased. The specific structure of the pin isolation groove 22 is shown below. Figure 6 and Figure 8 As shown. This processing step corresponds to Figure 15 In process (b), the depth of the pin isolation groove 22 is generally set to 1mm-2mm, and the specific depth can be set according to the creepage distance requirements.

[0047] A long, narrow groove 23 is provided on the back of the molding compound 21 on the side of the heat sink 15 near the first pin 11. The distance 'a' between the bottom surface of the long, narrow groove 23 and the connecting piece of the first pin 11 below it is not less than 0.5 mm. By providing the long, narrow groove 23 on the molding compound 21, combined with the voltage resistance characteristics of the molding compound material, this structural design allows the long, narrow groove 23 to withstand a voltage of at least 10,000 volts on both sides. This structural design also increases the creepage distance between the root of the pin and the edge of the heat sink 15 on the back of the lead frame. Specifically, to achieve better application results, the thickness of both side walls of the long, narrow groove 23 can be set to not less than 0.2 mm; that is, the thickness of the molding compound material between the inner side wall of the long, narrow groove 23 and the heat sink 15 is at least 0.2 mm, and the thickness between the inner side wall of the long, narrow groove 23 and the outer side of the molding compound 21 is at least 0.2 mm. The specific shape of the long, narrow groove 23 can be a trapezoidal groove or a wavy groove. The structure of the trapezoidal groove is as follows... Figure 9 As shown, the groove contains an elongated notch; the structure of the wavy groove is as follows: Figure 10 As shown, the groove can contain multiple elongated notches. This structural design, which increases creepage distance, is suitable for various package shapes.

[0048] Furthermore, the elongated groove 23 can be obtained by mechanically cutting to form a cavity after the encapsulated body 21 is completed and then filling and curing it; the elongated groove 23 can also be obtained by integrally molding using the second protrusion during the encapsulation process.

[0049] S140. Electroplating the molded body with tin.

[0050] Tin is electroplated on the outside of the encapsulated body 21 to form a protective layer on the metal outer surface.

[0051] S150. Further cut the connecting pieces of each pin in the elongated groove with a resin blade to cut off the connecting pieces of the first pin and form a cutting recess that separates each pin from the lead frame.

[0052] Using a resin blade of appropriate width, cut within the elongated groove 23, specifically cutting the molding compound 21 and the lead connector below the groove 23. The lead connector is the metal connector that connects the lead to the base island. This cutting creates a recess 7 to completely isolate each lead (primarily the first lead 11) from the lead frame 1, ultimately forming a recess 7 of depth b. This processing step corresponds to... Figure 15 Process (c) in the middle.

[0053] In the specific processing, a cutting recess 7 with a width smaller than the elongated groove 23 can be cut, meaning the width of the elongated groove 23 is greater than the width of the cutting recess 7. Furthermore, the depth b is the specific depth to which the cutting reaches the front surface of the pin; cutting stops at depth b. Specifically, the distance between the bottom surface of the cutting recess 7 and the connecting piece of the first pin 11 is 0.15-0.3mm, meaning the cutting depth b is 0.15-0.3mm. The cutting depth b can be set to 0.15-0.3mm to continue cutting for 0.15-0.30mm after penetrating the pin thickness, ensuring that the base island and the pin are completely separated.

[0054] c represents the width of the cutting recess 7 formed by the cutting. Further, the width c of the cutting recess 7 can be set to 0.3-0.5 mm. The cutting width c can be set according to the width of the resin blade and the size of the special molding compound particles. Setting the cutting width c to 0.3-0.5 mm ensures that the width of the cutting recess 7 can be filled with resin filler, and that the resin filler does not affect the strength and reliability of the product after curing. Simultaneously, it ensures that the withstand voltage between the connecting piece inside the first pin 11 and the base island meets the actual working requirements.

[0055] d represents the distance between the cutting centerline and the bottom pin. The specific value of d can be set according to the distance between the base island and the pin. A uniform starting point can be selected to ensure that the base island and pin are not damaged during the cutting process. Furthermore, the distance between the inner wall of the cutting recess 7 and the adjacent inner wall of the elongated groove 23 is not less than 0.2mm, meaning that during the cutting process, there must be at least a 0.20mm distance between the two sides of the cutting recess 7 and the inner wall of the elongated groove 23. The specific structure is as follows... Figure 11 and Figure 12 As shown.

[0056] S160. After cleaning the debris in the cutting pit and washing it, the plastic sealant is placed in a fixture for fixation; the fixture has elastic protrusions at both ends of the elongated groove to seal the elongated groove.

[0057] The molding compound powder and metal shavings in the cutting recess 7 can be cleaned, and further washed with deionized water. The appearance of the cutting recess 7 is inspected under a microscope. After confirming its quality, the initial product is placed in a specific fixture 8 for fixation. Fixture 8 is a special fixture 8 used for liquid resin filling; it is made of a one-piece high-temperature resistant material. Multiple elastic protrusions 81 are provided on the bottom surface of fixture 8. These elastic protrusions 81 are used to seal both ends of the elongated groove 23. The elastic protrusions 81 are made of a high-temperature resistant and highly elastic material. The specific structure of fixture 8 is as follows... Figure 13 As shown, the structure after the initial product is placed on fixture 8 is as follows: Figure 14 As shown. This processing step corresponds to Figure 15 The (d) process in the middle.

[0058] S170. Fill the cutting recess with liquid resin filler and bake it in an oven to cure.

[0059] A special liquid resin filler is injected into the cutting recess 7, and the fixture 8 and the initial product are placed in an oven for baking and curing. Finally, a cured material 9 is formed in the cutting recess 7. The top surface of the cured material 9 is an arc-shaped surface with a certain height difference. The depth of the arc-shaped surface in the cured material 9 within the cutting recess 7 is a value that further increases the creepage distance between the edge of the heat sink 15 and the root of the pin. Specifically, the distance between the top surface of the cured material 9 in the elongated groove 23 of the molded body 21 and the connecting piece of the first pin 11 below is not less than 0.5 mm (that is, the distance a between the bottom surface of the elongated groove 23 and the connecting piece of the first pin 11 below). Specifically, the cross-section of the elongated groove 23 in the molded body 21 after baking is an inverted trapezoid or a wave shape (that is, corresponding to the aforementioned trapezoidal groove or wave-shaped groove). This processing step corresponds to... Figure 15 The (e) process in the middle.

[0060] S180. The leads of the baked plastic package are cut and shaped to obtain the final half-bridge package device.

[0061] The baked molded body 21 is then cut and shaped to complete the encapsulation process and obtain a half-bridge packaged device with half-bridge electrical circuit function.

[0062] This invention also provides a half-bridge packaged device, which is fabricated using the packaging method described in the above embodiments, such as... Figure 4As shown, the half-bridge packaged device includes a lead frame 1, a copper-clad ceramic substrate 2, a substrate power chip 3, and a base island power chip 4; adhesive materials are provided between the lead frame 1 and the copper-clad ceramic substrate 2, between the copper-clad ceramic substrate 2 and the substrate power chip 3, and between the copper-clad ceramic substrate 2 and the base island power chip 4; metal bonding wires 6 for electrical connection are provided between the substrate power chip 3 and the pins of the copper-clad ceramic substrate 2, the base island power chip 4, and the lead frame 1, and between the base island power chip 4 and the pins of the copper-clad ceramic substrate 2 and the lead frame 1; the lead frame 1 has a lead frame 1 facing away from the copper-clad ceramic substrate 2. One side of the copper-clad ceramic substrate 2 is a heat sink 15. The molding compound is wrapped around the outside of the lead frame 1 to form a molding body 21. The lead frame 1 extends outward from the molding body 21 to form multiple parallel pins. The side of the molding body 21 between the first pin 11 and the second pin 12 is provided with a pin isolation groove 22. The back of the molding body 21 is provided with an elongated groove 23 on the side of the heat sink 15 near the pins. The bottom surface of the elongated groove 23 is provided with an inwardly recessed cutting pit 7, which separates the first pin 11 from the lead frame 1. The cutting pit 7 is provided with a curing material 9.

[0063] Compared with existing technologies, this invention claims protection for a packaging method and a half-bridge packaged device. This structure and method, without altering the traditional power lead frame and packaging process, uses a customized molding die and, after molding, mechanically cuts the base island and its connecting pins within the package. This allows the base island and the pins to respectively implement two different electrical signals after packaging, satisfying the half-bridge electrical circuit requirements without changing the package shape. It also has the following advantages: It uses a standard integrated lead frame, simplifying the packaging process; the entire process does not require customized wafer assembly equipment and fixtures, reducing hardware investment and packaging costs, and lowering process complexity; the inner insulating substrate is small, resulting in relatively low substrate cost; there is no space loss on the base island, maximizing chip space utilization; the pre-set trapezoidal groove structure on the back of the package, located below the heatsink, further reduces the amount of molding die cutting; the filled groove increases the creepage distance between the heatsink edge and the root of the external pins, meeting the requirements for higher creepage distances in devices.

[0064] The packaging process method and packaging device for a half-bridge structure provided in this embodiment of the invention include bonding a lead frame, a copper-clad ceramic substrate, a substrate power chip, and a base island power chip using an adhesive material, soldering metal wires, and then molding to form a molded body. A pin isolation groove is formed on the side of the molded body between the first pin and the second pin. The lead frame is a heat sink on the back of the base island. An elongated groove is formed on the side of the heat sink near the first pin. After electroplating the molded body with tin, the elongated groove is further cut to form a cutting pit. The cutting pit is cleaned and fixed in a fixture, then filled with liquid resin, baked to cure the liquid resin, and then subjected to lead trimming and shaping. The above-described packaging method, without changing the traditional power lead frame and packaging process, forms pin isolation grooves through plastic encapsulation and mechanically cuts to form cutting pits. Liquid resin is then used to fill the cutting pits and baked to cure. This allows the base island and each pin to perform different electrical functions after packaging. It can achieve a half-bridge electrical structure without changing the package shape, while meeting the requirements for high creepage distance in the circuit. It can also maximize chip space utilization and save packaging processing costs.

[0065] The above description is merely a specific embodiment of the present invention, but the scope of protection of the present invention is not limited thereto. Any person skilled in the art can easily conceive of various equivalent modifications or substitutions within the technical scope disclosed in the present invention, and these modifications or substitutions should all be covered within the scope of protection of the present invention. Therefore, the scope of protection of the present invention should be determined by the scope of the claims.

Claims

1. A packaging and processing method for a half-bridge structure, characterized in that, The packaging process includes: The copper-clad ceramic substrate is bonded and fixed to the base island of the lead frame using adhesive material. The power chip on the substrate is bonded and fixed to the copper-clad ceramic substrate using adhesive material. The power chip on the base island is bonded and fixed to the area on one side of the copper-clad ceramic substrate on the base island. Metal bonding wires are soldered between the power chip on the substrate and the copper-clad ceramic substrate, the base island power chip and the lead frame, and between the base island power chip and the pins of the copper-clad ceramic substrate and the lead frame to achieve a half-bridge electrical connection. The initial assembly of the welding wires is encapsulated using a molding die to form a molded body. The lead frame extends outward from the molded body to form multiple parallel pins. The side of the molded body between the first pin and the second pin forms a pin isolation groove. The lead frame is a heat sink on the back of the base island. The back of the molded body forms an elongated groove on the side of the heat sink near the first pin. The molded body is electroplated with tin. The connecting pieces of each pin in the long groove are further cut with a resin blade to cut off the connecting piece of the first pin and form a cutting pit that separates each pin from the lead frame. After cleaning the debris from the cutting recess and washing it, the plastic sealant is placed in a fixture for fixation; the fixture has elastic protrusions at both ends of the elongated groove to seal the elongated groove; The liquid resin filler is filled into the cutting recess and then placed in an oven to bake and cure. The leads of the baked plastic package are trimmed and shaped to obtain the final half-bridge packaged device.

2. The packaging and processing method for the half-bridge structure according to claim 1, characterized in that, The distance between the top surface of the cured material in the elongated groove of the baked encapsulated body and the connecting piece of the first pin below is not less than 0.5 mm.

3. The packaging and processing method for the half-bridge structure according to claim 1 or 2, characterized in that, The cross-section of the elongated groove in the baked encapsulated body is an inverted trapezoid or a wave shape.

4. The packaging and processing method for the half-bridge structure according to claim 3, characterized in that, The width of the elongated groove is greater than the width of the cutting pit.

5. The packaging and processing method for the half-bridge structure according to claim 4, characterized in that, The distance between the bottom surface of the cutting recess and the connecting piece of the first pin is 0.15-0.3mm.

6. The packaging and processing method for the half-bridge structure according to claim 5, characterized in that, The width of the cutting recess is 0.3-0.5mm.

7. The packaging and processing method for the half-bridge structure according to claim 6, characterized in that, The thickness of both sides of the elongated groove is not less than 0.2 mm.

8. The packaging and processing method for the half-bridge structure according to claim 3, characterized in that, The adhesive material is a thermally and electrically conductive alloy adhesive material.

9. The packaging and processing method for the half-bridge structure according to claim 3, characterized in that, The width of the pin isolation groove is 1 / 2 to 2 / 3 of the distance between the first pin and the second pin, and the depth of the pin isolation groove is 1-2 mm.

10. A half-bridge packaged device, characterized in that, The half-bridge packaged device is processed by the packaging process described in any one of claims 1-9, and the half-bridge packaged device includes a lead frame, a copper-clad ceramic substrate, a substrate power chip, and a base island power chip. Adhesive materials are provided between the lead frame and the copper-clad ceramic substrate, between the copper-clad ceramic substrate and the substrate power chip, and between the copper-clad ceramic substrate and the base island power chip. Metal bonding wires for electrical connection are provided between the power chip on the substrate and the copper-clad ceramic substrate, the power chip on the base island and the lead frame, and between the power chip on the base island and the power chip on the copper-clad ceramic substrate and the lead frame. The lead frame has a heat sink on one side away from the copper-clad ceramic substrate. A molding compound is wrapped around the outside of the lead frame to form a molding body. The lead frame extends outward from the molding body to form multiple parallel pins. The molding body has a pin isolation groove on the side between the first pin and the second pin. The back of the molding body has an elongated groove on the side of the heat sink near the pin. The bottom surface of the elongated groove is provided with an inwardly recessed cutting pit, which separates the first pin from the lead frame; the cutting pit is provided with a curing material.

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