Power MOS transistor with integrated diode

Abstract

The invention discloses a power MOS transistor with an internal integrated diode, and relates to the technical field of power semiconductor devices. Comprising drain electrode metal, an N + drain region, a voltage-withstanding layer, a gate groove, a side wall gate oxide layer, a polysilicon gate, an isolation oxide layer, an N + source region, a P base region, two P + contact regions and an accumulation type MOS gate groove, wherein the voltage-withstanding layer is formed by alternately arranging P columns and N columns or a single N drift region; the side wall gate oxide layer and the polysilicon gate are arranged in the gate groove; the isolation oxide layer is arranged on the upper surface of the polysilicon gate; and Schottky contact, source electrode metal and the like are arranged on the side wall of the source groove. According to the power MOS transistor structure with the internally-integrated diode, anti-parallel integration of an MOS junction barrier Schottky diode in an MOSFET is achieved, the power MOS transistor structure has the advantages that the turn-on voltage and forward voltage of the inner diode are reduced, the switching speed is high, power loss is low, and the reverse recovery characteristic is good, and meanwhile forward conduction of the MOS transistor is not affected.

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