Display panel mother board, preparation method of display panel and display device

Abstract

The invention discloses a display panel mother board, a preparation method of a display panel and a display device, the display panel mother board is provided with a display area and a non-display area, and the display panel mother board comprises a substrate; the first conductive structure is arranged in the non-display area and located on one side of the substrate, and a first communicating hole is formed in the first conductive structure; the partition structure is arranged in the non-display area, at least part of the partition structure is located on the side, away from the substrate, of the first conductive structure, part of the partition structure is located in the first communicating hole and connected with the first conductive structure, and the partition structure comprises a body structure and an eave structure at least part of the eave structure is located on the side, away from the first conductive structure, of the body structure; the eave structure protrudes out of the body structure in the direction parallel to the plane where the substrate is located.

Description

Technical Field

[0001] The present application belongs to the field of display technology, and in particular, relates to a display panel motherboard, a method for preparing a display panel, and a display device. Background Art

[0002] Liquid Crystal Display (LCD) panels, Organic Light Emitting Display (OLED) panels, and display panels using Light Emitting Diode (LED) devices have the advantages of high image quality, power saving, thin body, and wide application range. They are widely used in various consumer electronic products such as mobile phones, televisions, personal digital assistants, digital cameras, laptops, desktop computers, etc., becoming the mainstream in display devices.

[0003] However, the process performance of current display products needs to be improved. Summary of the invention

[0004] The embodiments of the present application provide a display panel motherboard, a method for manufacturing a display panel, and a display device, aiming to improve the structural reliability of the display panel.

[0005] An embodiment of the first aspect of the present application provides a display panel motherboard, the display panel motherboard has a display area and a non-display area, the display panel motherboard includes: a substrate; a first conductive structure, arranged in the non-display area and located on one side of the substrate, a first connecting hole is opened on the first conductive structure; a partition structure, arranged in the non-display area and at least partially located on the side of the first conductive structure away from the substrate, and part of the partition structure is located in the first connecting hole and connected to the first conductive structure, the partition structure includes a body structure and an eaves structure at least partially located on the side of the body structure away from the first conductive structure, the eaves structure is arranged to protrude from the body structure in a direction parallel to the plane where the substrate is located.

[0006] An embodiment of a second aspect of the present application provides a method for preparing a display panel, wherein the display panel has a display area and a non-display area, and the preparation method includes:

[0007] preparing a first conductive material layer on a substrate;

[0008] Performing patterning on the first conductive material layer to form a first conductive initial structure located in the non-display area;

[0009] preparing and forming a functional layer;

[0010] The functional layer is patterned to form a functional structure, wherein the functional structure is provided with a functional hole located in a non-display area, and at least a portion of the first conductive structure is exposed from the functional hole;

[0011] Preparing and forming a circuit layer and patterning the circuit layer to form at least a portion of a driving circuit, wherein at least a portion of a functional structure located in a non-display area is removed, and at least a portion of a first conductive structure exposed from a functional hole is removed to form a first conductive structure with a first connecting hole;

[0012] A partition primary structure is prepared and formed in the non-display area, wherein a portion of the partition primary structure is located in the first connecting hole and connected to the first conductive structure, and the partition primary structure includes a body primary structure and an eaves structure at least partially located on a side of the body primary structure away from the first conductive structure;

[0013] The body structure is etched to form a body structure, and the eaves structure is arranged to protrude from the body structure in a direction parallel to the plane where the substrate is located.

[0014] An embodiment of the third aspect of the present application provides a display device, including a display panel formed by the display panel motherboard of any of the above embodiments, or a display panel prepared by the preparation method of any of the above embodiments.

[0015] In a display panel motherboard provided in an embodiment of the present application, the display panel motherboard includes a substrate, a first conductive structure and a partition structure. The display panel motherboard has a display area and a non-display area, and the display panel motherboard in the display area can be used to realize luminous display. The partition structure is arranged in the non-display area, and the partition structure includes a body structure and an eaves structure at least partially located on the side of the body structure away from the first conductive structure. The eaves structure is arranged to protrude from the body structure in a direction parallel to the plane where the substrate is located, so that when the materials of other film layers are prepared on the partition structure, the eaves structure can block and isolate the materials of other film layers, so that the materials of other film layers can be disconnected at the partition structure, that is, the materials of other film layers formed at the partition structure are discontinuous at the partition structure, so that water vapor is not easy to invade the display area along the materials of other film layers formed on the partition structure, which can better improve the working stability of the display panel.

[0016] The first conductive structure is arranged in the non-display area and is located on one side of the substrate. The first conductive structure can be electrically connected to the partition structure, so that when etching the material of the body structure in the partition structure, the primary battery principle established by the electrical connection between the first conductive structure and the partition structure can be used to accelerate the electrochemical etching of the material of the body structure, thereby facilitating the preparation of the morphology of the eaves structure in the partition structure protruding from the body structure along a direction parallel to the plane of the substrate.

[0017] By opening a first connecting hole on the first conductive structure and arranging a partial partition structure in the first connecting hole and connected to the first conductive structure, a larger connection area can be provided between the partition structure and the first conductive structure, thereby improving the electrical connection effect between the first conductive structure and the partition structure, and further facilitating the preparation of the morphology of the partition structure, thereby improving the structural stability of the display panel motherboard. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for use in the embodiments of the present application will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0019] Figure 1 is a structural schematic diagram of a display panel motherboard provided in an embodiment of the present application;

[0020] Figure 2 is a partial cross-sectional view of a display panel motherboard in a display area provided in an embodiment of the present application;

[0021] Figure 3 is a partial cross-sectional view of a display panel motherboard in a non-display area provided by an embodiment of the present application;

[0022] Figure 4 is a partial cross-sectional view of a display panel motherboard in a non-display area provided by another embodiment of the present application;

[0023] Figure 5 is a structural schematic diagram of a partition structure provided in an embodiment of the present application;

[0024] Figure 6 is a schematic structural diagram of a third conductive structure provided in an embodiment of the present application;

[0025] Figure 7 It is a schematic flow chart of a method for preparing a display panel provided in an embodiment of the present application;

[0026] Figures 8 to 24 It is a schematic diagram of the preparation process of a method for preparing a display panel provided in an embodiment of the present application.

[0027] Description of reference numerals:

[0028] 10. Display panel motherboard;

[0029] 100, substrate;

[0030] 200, first conductive structure; 200a, first connecting hole; 201, first side surface; 210, first conductive part; 220, second conductive part;

[0031] 300, protective structure; 300a, clearance hole;

[0032] 400, second conductive structure; 400a, second connecting hole; 401, second side surface;

[0033] 500, partition structure; 500a, first partition space; 500b, second partition space; 500c, third partition space; 501, first auxiliary part; 502, partition part; 502a, first partition part; 502b, second partition part; 502c, third partition part; 503, connecting part; 504, second auxiliary part; 510, body structure; 520, eaves structure;

[0034] 600, third conductive structure; 600a, third connecting hole; 610, ring-shaped conductive part; 620, strip-shaped conductive part;

[0035] 700, dielectric layer; 700a, via hole;

[0036] L1, first insulating layer; L2, second insulating layer; L3, third insulating layer; L4, fourth insulating layer; L5, fifth insulating layer;

[0037] C, driving circuit; C1, transistor; C11, gate; C12, source and drain; C2, storage capacitor; C21, first electrode; C22, second electrode; C3, first electrical connection structure; C4, second electrical connection structure;

[0038] DAM, dam;

[0039] PDL, pixel definition layer; PDLa, pixel opening;

[0040] E1, first electrode; E2, second electrode; EL, light-emitting functional layer;

[0041] D1, functional layer; D11, first insulating material layer; D12, second insulating material layer;

[0042] J1, first conductive initial structure; J1a, first initial connecting hole; J2, functional structure; J2a, functional hole; J3, partition initial structure; J31, body initial structure; J4, protection initial structure; J5, third conductive initial structure;

[0043] R1, redundant light-emitting material; R2, redundant electrode material;

[0044] AA, display area; NA, non-display area; NA1, first area; NA1a, first sub-area; NA1b, second sub-area; NA2, second area. DETAILED DESCRIPTION

[0045] The features and exemplary embodiments of various aspects of the present application will be described in detail below. In order to make the purpose, technical solutions and advantages of the present application clearer, the present application will be further described in detail below in conjunction with the accompanying drawings and specific embodiments. It should be understood that the specific embodiments described herein are only configured to explain the present application and are not configured to limit the present application. For those skilled in the art, the present application can be implemented without the need for some of these specific details. The following description of the embodiments is only to provide a better understanding of the present application by illustrating the examples of the present application.

[0046] It should be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, the elements defined by the statement "include..." do not exclude the existence of other identical elements in the process, method, article or device including the elements.

[0047] It should be understood that when describing the structure of a component, when a layer or a region is referred to as being "on" or "over" another layer or another region, it may mean that it is directly on the other layer or another region, or that other layers or regions are included between it and the other layer or another region. Moreover, if the component is turned over, the layer or a region will be "below" or "beneath" another layer or another region.

[0048] Embodiments of the present application provide a display panel motherboard, a method for preparing a display panel, and a display device. The following will describe various embodiments of the display panel motherboard, the method for preparing a display panel, and the display device in conjunction with the accompanying drawings.

[0049] Figure 1 is a schematic diagram of the structure of a display panel motherboard provided in an embodiment of the present application, Figure 2 is a partial cross-sectional view of a display panel motherboard in a display area AA provided in an embodiment of the present application, Figure 3 It is a partial cross-sectional view of a display panel motherboard in a non-display area NA provided in an embodiment of the present application.

[0050] like Figures 1 to 3 As shown, an embodiment of the first aspect of the present application provides a display panel motherboard 10, the display panel motherboard 10 has a display area AA and a non-display area NA, the display panel motherboard 10 includes: a substrate 100; a first conductive structure 200, arranged in the non-display area NA and located on one side of the substrate 100, and a first connecting hole 200a is opened on the first conductive structure 200; a partition structure 500, arranged in the non-display area NA and at least partially located on the side of the first conductive structure 200 away from the substrate 100, and part of the partition structure 500 is located in the first connecting hole 200a and connected to the first conductive structure 200, the partition structure 500 includes a body structure 510 and an eaves structure 520 at least partially located on the side of the body structure 510 away from the first conductive structure 200, and the eaves structure 520 is arranged to protrude from the body structure 510 along a direction parallel to the plane where the substrate 100 is located.

[0051] In a display panel motherboard 10 provided in an embodiment of the present application, the display panel motherboard 10 can be used to form a display panel, that is, the display panel can be formed by performing certain processing on the display panel motherboard 10. For example, the display panel motherboard 10 can be cut to form a display panel.

[0052] The display panel motherboard 10 includes a substrate 100, a first conductive structure 200 and a partition structure 500. The display panel motherboard 10 has a display area AA and a non-display area NA. The display panel motherboard 10 in the display area AA can be used to realize light-emitting display.

[0053] Optionally, the display panel motherboard 10 also includes a first electrode E1, a light-emitting functional layer EL and a second electrode E2, which are arranged in the display area AA and located on one side of the substrate 100. The light-emitting functional layer EL may be located on the side of the first electrode E1 away from the substrate 100, and the second electrode E2 may be located on the side of the light-emitting functional layer EL away from the substrate 100.

[0054] Optionally, the light-emitting functional layer EL may include a hole injection layer (HIL), a hole transport layer (HTL), a light-emitting structure, an electron injection layer (EIL) and an electron transport layer (ETL).

[0055] Optionally, the first electrode E1 and the second electrode E2 can be used as pixel electrodes, one of the first electrode E1 and the second electrode E2 can be used as an anode, and the other can be used as a cathode to drive the light-emitting functional layer EL to emit light. The embodiment of the present application is described by taking the first electrode E1 as the anode and the second electrode E2 as the cathode.

[0056] Optionally, the display panel motherboard 10 may further include a driving circuit C disposed between the substrate 100 and the first electrode E1 , and the driving circuit C may be used to provide a driving current to the first electrode E1 to drive the light emitting functional layer EL to emit light.

[0057] Exemplarily, the driving circuit C may include a transistor C1, a storage capacitor C2, and a driving signal line for connecting various devices. The transistor C1 may include a semiconductor, a gate C11, and a source and drain electrode C12. The storage capacitor C2 includes a first plate C21 and a second plate C22. The transistor C1 and the storage capacitor C2 may be arranged in the display area AA, and the source and drain electrode C12 of the transistor C1 may be electrically connected to the first electrode E1, so that the transistor C1 may be used to provide a driving current to the first electrode E1 to realize the luminescence of the driving light-emitting functional layer EL.

[0058] Optionally, the driving circuit C may also include a first electrical connection structure C3 and a second electrical connection structure C4 arranged between the source and drain C12 and the first electrode E1. The second electrical connection structure C4 may be located on a side of the first electrical connection structure C3 away from the substrate 100. The first electrical connection structure C3 may be connected to the source and drain C12 vias, the second electrical connection structure C4 may be connected to the first electrical connection structure C3 vias, and the first electrode E1 may be connected to the second electrical connection structure C4 vias, so that the source and drain C12 can be electrically connected to the first electrode E1 through the first electrical connection structure C3 and the second electrical connection structure C4.

[0059] Optionally, the display panel motherboard 10 may further include a first insulating layer L1 , a second insulating layer L2 , a third insulating layer L3 , a fourth insulating layer L4 and a fifth insulating layer L5 which are arranged on one side of the substrate 100 and stacked sequentially in a direction away from the substrate 100 .

[0060] As an example, the gate C11 and the first electrode C21 can be located on the side of the first insulating layer L1 facing the substrate 100, the second electrode C22 can be located between the first insulating layer L1 and the second insulating layer L2, the source and drain C12 can be located between the second insulating layer L2 and the third insulating layer L3, the first electrical connection structure C3 can be located between the third insulating layer L3 and the fourth insulating layer L4, and the second electrical connection structure C4 can be located between the fourth insulating layer L4 and the fifth insulating layer L5.

[0061] Optionally, the first insulating layer L1 and the second insulating layer L2 may extend from the display area AA to the non-display area NA, and the third insulating layer L3, the fourth insulating layer L4 and the fifth insulating layer L5 may be located only in the display area AA.

[0062] Optionally, the first conductive structure 200 may be disposed between the first insulating layer L1 and the substrate 100. As an example, the first conductive structure 200 may be disposed in the same layer and material as the gate C11, so that the first conductive structure 200 and the gate C11 may be manufactured in the same manufacturing process and using the same manufacturing equipment, thereby being able to better improve the manufacturing efficiency of the display panel.

[0063] Optionally, the partition structure 500 can be set with the same material as the second electrical connection structure C4. For example, the second electrical connection structure C4 can be formed by stacking a multi-layer film layer structure (not shown in the figure), and the body structure 510 and the eaves structure 520 in the partition structure 500 can respectively correspond to the same material settings of each film layer structure in the second electrical connection structure C4, and the partition structure 500 can be prepared using the same preparation equipment in the same preparation process as the second electrical connection structure C4, thereby greatly improving the preparation efficiency of the display panel.

[0064] Optionally, the fifth insulating layer L5 may be reused as a planarization layer of the display panel motherboard 10 , and the first electrode E1 may be disposed on a side of the fifth insulating layer L5 facing away from the substrate 100 .

[0065] Optionally, the display panel motherboard 10 may further include a pixel definition layer PDL disposed in the display area AA and located on the side of the fifth insulating layer L5 and the first electrode E1 away from the substrate 100, and the pixel definition layer PDL may be used to divide sub-pixels. The pixel definition layer PDL may be provided with a pixel opening PDLa, and the light emitting functional layer EL is partially located in the pixel opening PDLa, and a portion of the surface of the first electrode E1 on the side away from the substrate 100 is exposed from the pixel opening PDLa and connected to the light emitting functional layer EL, so that the first electrode E1 drives the light emitting functional layer EL to emit light.

[0066] Optionally, the display panel motherboard 10 may further include a dam DAM disposed in the non-display area NA, the dam DAM may be disposed on the side of the second insulating layer L2 facing away from the substrate 100, and the dam DAM may be used to limit the overflow of part of the organic material during the preparation process of the display panel motherboard 10, so that part of the organic material may be better confined to the side of the dam DAM facing the display area AA. For example, the dam DAM may be used to limit the overflow of the material of the organic encapsulation layer during the preparation process of the display panel motherboard 10, so that the material of the organic encapsulation layer may be better confined to the side of the dam DAM facing the display area AA. Exemplarily, the dam DAM may be set with the same material as the fifth insulating layer L5, and the dam DAM may be prepared in the same preparation process and using the same preparation equipment as the fifth insulating layer L5.

[0067] The partition structure 500 is disposed in the non-display area NA. For example, the partition structure 500 may be disposed on a side of the dam DAM away from the display area AA.

[0068] The partition structure 500 includes a body structure 510 and an eaves structure 520 that is at least partially located on a side of the body structure 510 away from the first conductive structure 200. The eaves structure 520 is arranged to protrude from the body structure 510 in a direction parallel to the plane where the substrate 100 is located, so that when materials of other film layers are prepared on the partition structure 500, the eaves structure 520 can block and isolate the materials of other film layers, so that the materials of other film layers can be disconnected at the partition structure 500, that is, the materials of other film layers formed at the partition structure 500 are discontinuous at the partition structure 500, so that water vapor is not easy to invade the display area AA along the materials of other film layers formed on the partition structure 500, which can better improve the working stability of the display panel.

[0069] Illustratively, during the preparation of the display panel motherboard 10, the material of the light-emitting functional layer EL and the material of the second electrode E2 falling within the display area AA can be used to form the light-emitting functional layer EL and the second electrode E2, while the material of the light-emitting functional layer EL and the material of the second electrode E2 falling within the non-display area NA will form redundant light-emitting materials R1 and redundant electrode materials R2. The partition structure 500 can be used to isolate the redundant light-emitting materials R1 and the redundant electrode materials R2 falling within the non-display area NA, so that the redundant light-emitting materials R1 and the redundant electrode materials R2 may be discontinuous at the partition structure 500, thereby preventing water vapor from easily invading the display area AA along the redundant light-emitting materials R1 and the redundant electrode materials R2.

[0070] Optionally, the eaves structure 520 may also be partially located on a side of the body structure 510 facing the first conductive structure 200 .

[0071] The first conductive structure 200 is arranged in the non-display area NA and is located on one side of the substrate 100. The first conductive structure 200 can be electrically connected to the partition structure 500, so that when the material of the body structure 510 in the partition structure 500 is etched, the primary battery principle established by the electrical connection between the first conductive structure 200 and the partition structure 500 can be used to accelerate the electrochemical etching of the material of the body structure 510, thereby facilitating the preparation of the morphology of the eaves structure in the partition structure 500 protruding from the body structure 510 along a direction parallel to the plane where the substrate 100 is located.

[0072] In an embodiment of the present application, the materials of the first conductive structure 200 and the partition structure 500 can be reasonably arranged so as to establish a galvanic cell principle between the first conductive structure 200 and the partition structure 500, thereby facilitating the use of the galvanic cell principle to accelerate the electrochemical etching of the material of the body structure 510 by the developing electrolyte during the preparation process. For example, the galvanic cell principle can be used to accelerate the electrochemical etching of the material of the body structure 510 by the tetramethylammonium hydroxide (TMAH) electrolyte during the preparation process.

[0073] Optionally, the material of the partition structure 500 and the first conductive structure 200 includes a metal material, and the metal activity of the body structure 510 is greater than the metal activity of the first conductive structure 200 .

[0074] Exemplarily, the material of the first conductive structure 200 may include molybdenum, and / or the material of the body structure 510 may include aluminum, and / or the material of the eave structure 520 may include titanium.

[0075] By opening a first connecting hole 200a on the first conductive structure 200, and arranging a part of the partition structure 500 to be located in the first connecting hole 200a and connected to the first conductive structure 200, a larger connection area can be provided between the partition structure 500 and the first conductive structure 200, thereby better improving the electrical connection effect between the first conductive structure 200 and the partition structure 500, and further facilitating the preparation of the morphology of the partition structure 500, and better improving the structural stability of the display panel motherboard 10.

[0076] Optionally, the first connecting hole 200 a may be provided through the first conductive structure 200 .

[0077] In some optional embodiments, the display panel motherboard 10 further includes a protection structure 300 disposed between the partition structure 500 and the first conductive structure 200 , and the protection structure 300 is provided with a clearance hole 300 a communicating with the first communication hole 200 a .

[0078] Optionally, the clearance hole 300 a may be provided through the protection structure 300 .

[0079] Optionally, the orthographic projection of the protection structure 300 on the substrate 100 may be located within the orthographic projection of the first conductive structure 200 on the substrate 100 .

[0080] Optionally, the material of the protection structure 300 includes an inorganic material. For example, the material of the protection structure 300 may include silicon nitride or the like.

[0081] Optionally, the first conductive structure 200 has a first side surface 201 on the side away from the first connecting hole 200a, and at least a portion of the first side surface 201 may not be covered by the protective structure 300 and the partition structure 500, so that during the preparation process, the developing electrolyte can contact the first side surface 201, so as to establish the primary battery principle between the first conductive structure 200 and the partition structure 500.

[0082] In these optional embodiments, the protection structure 300 disposed above the first conductive structure 200 can be used to protect the first conductive structure 200 during the preparation process of the display panel motherboard 10, so that the first conductive structure 200 below the protection structure 300 can have a relatively suitable thickness to achieve electrical connection with the partition structure 500. By providing the first connecting hole 200a and the clearance hole 300a, the partition structure 500 can be electrically connected to the first conductive structure 200 through the first connecting hole 200a and the clearance hole 300a, thereby effectively reducing the shielding effect of the protection structure 300 on the first conductive structure 200.

[0083] like Figure 3 As shown, in some optional embodiments, the first conductive structure 200 includes a first conductive portion 210 and a second conductive portion 220 connected to each other, the orthographic projection of the first conductive portion 210 on the substrate 100 is within the orthographic projection of the protection structure 300 and / or the partition structure 500 on the substrate 100, the orthographic projection of the second conductive portion 220 on the substrate 100 does not overlap with the orthographic projection of the protection structure 300 and / or the partition structure 500 on the substrate 100, and the second conductive portion 220 is at least partially arranged around the first conductive portion 210.

[0084] Optionally, the maximum thickness of the second conductive portion 220 is smaller than the maximum thickness of the first conductive portion 210 .

[0085] Optionally, the surface of the protection structure 300 away from the clearance hole 300a is coplanar with at least part of the sidewall surface of the partition structure 500. Exemplarily, the surface of the protection structure 300 away from the clearance hole 300a is coplanar with at least part of the sidewall surface of the eave structure 520 located on the side of the body structure 510 facing the substrate 100.

[0086] In these optional embodiments, the orthographic projection of the second conductive portion 220 on the substrate 100 is arranged not to overlap with the orthographic projection of the protective structure 300 and / or the partition structure 500 on the substrate 100, that is, the second conductive portion 220 of the first conductive structure 200 is arranged not to be covered by the protective structure 300 and the partition structure 500, so that during the preparation process, the developing electrolyte can have better contact with the second conductive portion 220, and the contact area between the developing electrolyte and the first conductive structure 200 can be improved, so as to establish the primary battery principle between the first conductive structure 200 and the partition structure 500.

[0087] In which, during the preparation process of the display panel motherboard 10, the material of the partition structure 500 and the material of the protective structure 300 above the first conductive part 210 may not be removed to form the partition structure 500 and the protective structure 300, while the material of the partition structure 500 and the material of the protective structure 300 above the second conductive part 220 may be removed together to expose the second conductive part 220.

[0088] At the same time, since the second conductive part 220 is not covered with the protective structure 300, when the material of the partition structure 500 and the material of the protective structure 300 above the second conductive part 220 are removed, the second conductive part 220 is easily affected by the etching material and thinned, so that the maximum thickness of the second conductive part 220 is smaller than the maximum thickness of the first conductive part 210.

[0089] Figure 4 It is a partial cross-sectional view of a display panel motherboard in a non-display area NA provided in another embodiment of the present application.

[0090] like Figure 4 As shown, in some optional embodiments, the display panel motherboard 10 further includes a second conductive structure 400 disposed between the protective structure 300 and the partition structure 500 , and the second conductive structure 400 is provided with a second connecting hole 400 a connected to the clearance opening.

[0091] Optionally, the second connecting hole 400 a may be provided through the second conductive structure 400 .

[0092] Optionally, the orthographic projection of the second conductive structure 400 on the substrate 100 may be located within the orthographic projection of the first conductive structure 200 on the substrate 100 .

[0093] Optionally, the surface of the second conductive structure 400 facing away from the substrate 100 may be in contact with the partition structure 500 , and the partition structure 500 may also be partially located in the second connecting hole 400 a and in contact with the second conductive structure 400 .

[0094] Optionally, the maximum thickness of the second conductive structure 400 is smaller than the maximum thickness of the first conductive structure 200 .

[0095] Optionally, the orthographic projection of the second conductive structure 400 on the substrate is located within the orthographic projection of the protection structure 300 on the substrate, and / or the orthographic projection of the second conductive structure 400 on the substrate is located within the orthographic projection of the protection structure 300 on the substrate.

[0096] Optionally, the first side surface 201 is coplanar with the surface of the protection structure 300 away from the clearance hole 300a, and / or the second conductive structure 400 has a second side surface 401 on the side away from the second connecting hole 400a, and the second side surface 401 is coplanar with the surface of the protection structure 300 away from the clearance hole 300a.

[0097] In these optional embodiments, the second conductive structure 400 can also be used to protect the first conductive structure 200 during the preparation of the display panel motherboard 10, so that the first conductive structure 200 below the protective structure 300 can have a relatively suitable thickness to achieve electrical connection with the partition structure 500. By providing the first connecting hole 200a, the second connecting hole 400a and the clearance hole 300a, the partition structure 500 can be electrically connected to the first conductive structure 200 through the first connecting hole 200a, the second connecting hole 400a and the clearance hole 300a, thereby effectively reducing the shielding effect of the protective structure 300 on the first conductive structure 200.

[0098] Furthermore, by setting up an electrical connection between the second conductive structure 400 and the partition structure 500, when etching the material of the body structure 510 in the partition structure 500, the principle of the primary battery established by the electrical connection between the second conductive structure 400 and the partition structure 500 can be used to accelerate the electrochemical etching of the material of the body structure 510, thereby further facilitating the preparation of the morphology in which the eaves structure in the partition structure 500 protrudes from the body structure 510 in a direction parallel to the plane of the substrate 100.

[0099] Optionally, at least a portion of the second side surface 401 may not be covered by the partition structure 500 , so that during the preparation process, the developing electrolyte may contact the second side surface 401 , so as to establish a galvanic cell principle between the second conductive structure 400 and the partition structure 500 .

[0100] In the embodiments of the present application, the materials of the second conductive structure 400 and the partition structure 500 can be reasonably arranged so that the galvanic cell principle can also be established between the second conductive structure 400 and the partition structure 500, thereby facilitating the use of the galvanic cell principle to accelerate the electrochemical etching of the material of the body structure 510 by the developing electrolyte during the preparation process. For example, the galvanic cell principle can be used to accelerate the electrochemical etching of the material of the body structure 510 by the tetramethylammonium hydroxide electrolyte during the preparation process.

[0101] Optionally, the materials of the partition structure 500 and the second conductive structure 400 include metal materials, and the metal activity of the body structure 510 is greater than the metal activity of the second conductive structure 400 .

[0102] Exemplarily, the material of the second conductive structure 400 includes molybdenum, and / or the material of the body structure 510 includes aluminum, and / or the material of the eaves structure 520 includes titanium.

[0103] Among them, since the second conductive structure 400 is not covered with other film layer structures before preparing the partition structure 500, during the preparation process of the display panel motherboard 10, when other film layer structures are patterned, the second conductive structure 400 is easily affected by the etching material and thinned, so that the maximum thickness of the second conductive structure 400 is smaller than the maximum thickness of the first conductive structure 200.

[0104] Figure 5 It is a structural schematic diagram of a partition structure 500 provided in an embodiment of the present application.

[0105] like Figures 3 to 5 As shown, in some optional embodiments, the non-display area NA includes a first area NA1 and a second area NA2 located on a side of the first area NA1 away from the display area AA, the first conductive structure 200 is arranged in the second area NA2, the partition structure 500 includes a first auxiliary portion 501 located in the second area NA2 and a partition portion 502 located in the first area NA1, the partition portion 502 is electrically connected to the first auxiliary portion 501 and the partition portion 502 is arranged around the first auxiliary portion 501, and a first partition space 500a is provided between the partition portion 502 and the first auxiliary portion 501.

[0106] Optionally, the partition structure 500 further includes a connecting portion 503 , at least a portion of the connecting portion 503 is connected between the partition portion 502 and the first auxiliary portion 501 , and the partition portion 502 and the first auxiliary portion 501 can be electrically connected via the connecting portion 503 .

[0107] Optionally, the connection portion 503 may partially cover the surface of the first conductive structure 200 and the protective structure 300, so as to facilitate the connection between the connection portion 503 and the first auxiliary portion 501. Optionally, when the display panel motherboard 10 further includes a second conductive structure 400, the connection portion 503 may partially cover the surface of the second conductive structure 400, so as to facilitate the connection between the connection portion 503 and the first auxiliary portion 501.

[0108] Optionally, the connection portion 503 may be in a strip shape so as to form a larger first partition space 500a. For example, the connection portion 503 may be formed by extending in a direction from the second area NA2 to the first area NA1.

[0109] In these optional embodiments, during the preparation of the display panel motherboard 10, the eaves structure 520 of the partition portion 502 can isolate the redundant light-emitting material R1 and the redundant electrode material R2. For example, the redundant light-emitting material R1 and the redundant electrode material R2 located in the first partition space 500a may be discontinuous with the redundant light-emitting material R1 and the redundant electrode material R2 at other positions, so that water vapor is not easy to invade from the second area NA2 to the first area NA1 and the display area AA along the redundant light-emitting material R1 and the redundant electrode material R2.

[0110] The first auxiliary part 501 and the first conductive structure 200 located in the second area NA2 can be mainly used to realize the galvanic battery principle between the first conductive structure 200 and the partition structure 500. By setting the partition part 502 to be electrically connected with the first auxiliary part 501, the material of the body structure 510 in the partition part 502 can also be affected by the galvanic battery principle and be better electrochemically etched by the developing electrolyte, so that the eaves structure in the partition part 502 can be better formed in the direction parallel to the plane of the substrate 100 protruding from the body structure 510.

[0111] Optionally, after the preparation of the display panel motherboard 10 is completed, the second area NA2 of the display panel motherboard 10 can be removed by cutting to form a display panel. The partition portion 502 located in the first area NA1 can better isolate the redundant light-emitting material R1 and the redundant electrode material R2 in the first area NA1, so that water vapor at the cutting point is not easy to invade the display area AA along the redundant light-emitting material R1 and the redundant electrode material R2 in the first area NA1.

[0112] In some optional embodiments, the partition structure 500 may further include a second auxiliary portion 504 disposed on a side of the partition portion 502 facing the display area AA.

[0113] Optionally, the second auxiliary portion 504 may be disposed between the dam DAM and the partition portion 502 , and the second auxiliary portion 504 may be spaced apart from both the dam DAM and the partition portion 502 .

[0114] In these optional embodiments, the second auxiliary portion 504 may also be used to disconnect the redundant light emitting material R1 from the redundant electrode material R2.

[0115] Figure 6 is a schematic diagram of the structure of the third conductive structure 600 provided in the embodiment of the present application. Figure 6 The third connecting hole 600a opened on the third conductive structure 600 is hidden.

[0116] like Figure 6As shown, in some optional embodiments, the number of partition portions 502 is at least two, and at least two partition portions 502 are mutually nested in the direction from the second area NA2 to the first area NA1, and there is a second annular partition space 500b between at least two partition portions 502. The display panel motherboard 10 also includes a dielectric layer 700 located on one side of the substrate 100 and a third conductive structure 600 arranged between the dielectric layer 700 and the substrate 100. The dielectric layer 700 is provided with a conductive hole 700a to expose at least a portion of the third conductive structure 600. The partition portion 502 is at least partially located on the side of the dielectric layer 700 away from the substrate 100, and part of the partition portion 502 is located in the conductive hole 700a and connected to the third conductive structure 600. At least two adjacent partition portions 502 are electrically connected through the third conductive structure 600.

[0117] Optionally, at least two partition portions 502 are nested in a direction from the second area NA2 to the first area NA1, which may mean that at least part of the partition portion 502 is annular, and part of the partition portion 502 close to the first area NA1 is located in the area enclosed by the part of the annular partition portion 502 close to the second area NA2.

[0118] Optionally, the second partition space 500b may be disposed around the second area NA2.

[0119] Optionally, the dielectric layer 700 is spaced apart from the first conductive structure 200 to facilitate contact between the first side surface 201 of the first conductive structure 200 and the developing electrolyte.

[0120] Optionally, at least a portion of the protection structure 300 and the dielectric layer 700 are provided in the same layer and with the same material.

[0121] Exemplarily, the dielectric layer 700 may include only the second insulating layer L2 (not shown in the figure), the protection structure 300 may be provided in the same layer and with the same material as the second insulating layer L2, and the third conductive structure 600 may be located between the first insulating layer L1 and the second insulating layer L2. For example, the third conductive structure 600 may be provided in the same layer and with the same material as the second electrode plate C22 of the storage capacitor C2, that is, the third conductive structure 600 may be prepared in the same preparation process and using the same preparation equipment as the second electrode plate C22.

[0122] Or illustratively, the dielectric layer 700 may include a first insulating layer L1 and a second insulating layer L2 located on the side of the first insulating layer L1 facing away from the substrate 100, and the protection structure 300 may be set in the same layer and material as the first insulating layer L1. For example, the third conductive structure 600 may be set in the same layer and material as the first conductive structure 200 and / or the gate C11, that is, the third conductive structure 600 may be prepared in the same preparation process and using the same preparation equipment as the first conductive structure 200 and / or the gate C11.

[0123] Optionally, the via 700a may be annular, so that there is a larger electrical connection area between the partition portion 502 and the third conductive structure 600, thereby improving the electrical connection effect between the partition portion 502 and the third conductive structure 600. Exemplarily, the via 700a may be arranged around the second area NA2.

[0124] Optionally, the third conductive structure 600 has a third connecting hole 600a connected to the conductive hole 700a, and part of the partition part 502 is located in the third connecting hole 600a and connected to the third conductive structure 600, which can further increase the electrical connection area between the partition part 502 and the third conductive structure 600.

[0125] Optionally, the third connecting hole 600 a may be provided through the third conductive structure 600 .

[0126] Optionally, the third connecting hole 600 a is ring-shaped, which can further increase the electrical connection area between the partition portion 502 and the third conductive structure 600 .

[0127] In these optional embodiments, at least two partition portions 502 are arranged to be nested in a direction from the second area NA2 to the first area NA1, and a second partition space 500b in a ring shape is provided between at least two partition portions 502, so that the partition portion 502 may be discontinuous at the second partition space 500b, and the redundant light-emitting material R1 and the redundant electrode material R2 may be better separated in the second partition space 500b, so that water vapor is not easy to invade from the second area NA2 to the first area NA1 and the display area AA along the redundant light-emitting material R1 and the redundant electrode material R2 in the second partition space 500b, and water vapor is not easy to invade from the second area NA2 to the first area NA1 and the display area AA along the redundant light-emitting material R1 and the redundant electrode material R2 above the partition portion 502.

[0128] By arranging that at least two adjacent partition parts 502 are electrically connected through the third conductive structure 600, the two partition parts 502 separated at the second partition space 500b can be electrically connected through the third conductive structure 600, so that the materials of the body structure 510 of each partition part 502 in the first area NA1 can be affected by the galvanic cell principle and can be electrochemically etched by the developing electrolyte, so as to better form the morphology of the eaves structure in the partition part 502 protruding from the body structure 510 along the direction parallel to the plane of the substrate 100.

[0129] In some optional embodiments, the third conductive structure 600 may include at least two annular conductive portions 610 and a strip conductive portion 620 connected between adjacent annular conductive portions 610 , and the annular conductive portions 610 are disposed around the first conductive structure 200 .

[0130] Optionally, at least two annular conductive portions 610 may be mutually nested in a direction from the second area NA2 to the first area NA1.

[0131] Optionally, the ring-shaped conductive portion 610 may be disposed around the second area NA2, and the strip-shaped conductive portion 620 may be formed by extending in a direction from the second area NA2 to the first area NA1.

[0132] Optionally, two adjacent annular conductive parts 610 may be electrically connected via the connecting part 503 .

[0133] Optionally, part of the partition portion 502 is located in the conducting hole 700 a and connected to the annular conductive portion 610 .

[0134] Optionally, the third connecting hole 600 a may be opened in the annular conductive portion 610 .

[0135] In these optional embodiments, part of the third conductive structure 600 is arranged to be annular so that water vapor is not easily transferred between adjacent annular conductive portions 610 , thereby better limiting the invasion of water vapor along the third conductive structure 600 into the display area AA.

[0136] In some optional embodiments, the first region NA1 includes a first sub-region NA1a and a second sub-region NA1b located between the first sub-region NA1a and the second region NA2, the partition portion 502 includes a first partition portion 502a, a second partition portion 502b and a third partition portion 502c, the first partition portion 502a and the second partition portion 502b are both located in the first sub-region NA1a, the second partition portion 502b is located on the side of the first partition portion 502a away from the display area AA, a second partition space 500b is provided between the first partition portion 502a and the second partition portion 502b, the first partition portion 502a and the second partition portion 502b are electrically connected through a third conductive structure 600, and at least a portion of the connecting portion 503 is connected between the second partition portion 502b and the third partition portion 502c.

[0137] Optionally, the number of the first partition parts 502a is at least two, adjacent first partition parts 502a are electrically connected via the third conductive structure 600, and a second partition space 500b is provided between two adjacent first partition parts 502a.

[0138] Optionally, the number of the third partitioning parts 502c is at least two, at least part of the connecting part 503 is connected between adjacent third partitioning parts 502c, and a third partitioning space 500c is provided between two adjacent third partitioning parts 502c.

[0139] Optionally, the first partition portion 502 a and the second partition portion 502 b may be located on a side of the dielectric layer 700 away from the substrate 100 , and the third partition portion 502 c may be located on a side of the substrate 100 and between the dielectric layer 700 and the first conductive structure 200 .

[0140] In these optional embodiments, the redundant light-emitting material R1 and the redundant electrode material R2 located in the non-display area NA can be isolated at the second partition space 500b between adjacent first partition portions 502a and the second partition space 500b between the first partition portion 502a and the second partition portion 502b, so as to better limit the invasion of water vapor into the display area AA.

[0141] The first partition portion 502a can be electrically connected to the first auxiliary portion 501 through the third conductive structure 600, the second partition portion 502b and the third partition portion 502c, so that the materials of the body structure 510 of the first partition portion 502a and the second partition portion 502b can be better electrochemically etched by the developing electrolyte under the influence of the galvanic cell principle, thereby better forming the morphology of the eaves structure in the first partition portion 502a and the second partition portion 502b protruding from the body structure 510 in a direction parallel to the plane of the substrate 100, so that the redundant light-emitting material R1 and the redundant electrode material R2 can be better disconnected at the second partition space 500b.

[0142] The third partition portion 502c in the second sub-region NA1b can play a better transition role, and the redundant light-emitting material R1 and the redundant electrode material R2 can also be disconnected at the third partition space 500c to limit the transfer of water vapor in the second sub-region NA1b to a certain extent.

[0143] Figure 7 is a schematic flow chart of a method for preparing a display panel provided in an embodiment of the present application, Figures 8 to 24 It is a schematic diagram of the preparation process of a method for preparing a display panel provided in an embodiment of the present application.

[0144] The second aspect of the present application provides a method for preparing a display panel, wherein the display panel has a display area AA and a non-display area NA. The display panel prepared by the preparation method can be a display panel prepared based on the display panel motherboard 10 provided by any of the first aspect embodiments above. Figures 1 to 6 Combined with Figures 7 to 24 , the preparation method comprises:

[0145] Step S10 : preparing a first conductive material layer on the substrate 100 .

[0146] Optionally, the first conductive material layer may be used to form the first conductive structure 200 , the third conductive structure 600 , and the gate C11 of the transistor C1 in any of the aforementioned embodiments.

[0147] Optionally, the material of the first conductive material layer may include molybdenum.

[0148] Step S20: Figure 8 As shown, the first conductive material layer is patterned to form a first conductive preliminary structure J1 located in the non-display area NA.

[0149] Optionally, the first conductive preliminary structure J1 may be used to form the first conductive structure 200 in any of the aforementioned embodiments.

[0150] Optionally, in step S20: the first conductive material layer is patterned to form a third conductive preliminary structure J5 located in the non-display area NA and spaced apart from the first conductive preliminary structure J1. The third conductive preliminary structure J5 can be used to form the third conductive structure 600 in any of the above embodiments.

[0151] Step S30: Figures 9 to 12 As shown, a functional layer D1 is prepared and formed.

[0152] Optionally, the functional layer D1 includes a first insulating material layer D11, a second insulating material layer located on the side of the first insulating material layer D11 away from the substrate 100, and a second conductive structure 400 located in the non-display area NA and between the first insulating material layer D11 and the second insulating material layer. The second conductive structure 400 may be provided with a second connecting hole 400a.

[0153] Optionally, the first insulating material layer D11 may be used to form the first insulating layer L1 and the protection structure 300 in any of the aforementioned embodiments, and the second insulating material layer may be used to form the second insulating layer L2 in any of the aforementioned embodiments.

[0154] Optionally, when preparing the second conductive structure 400 of the functional layer D1 in step S30 , the preparation of the second electrode plate C22 of the storage capacitor C2 in the display area AA can be completed simultaneously.

[0155] Step S40: Fig.13 As shown, the functional layer D1 is patterned to form a functional structure J2. The functional structure J2 is provided with a functional hole J2a located in the non-display area NA, and at least a portion of the first conductive structure J1 is exposed from the functional hole J2a.

[0156] Optionally, in step S40: the first insulating material layer D11 and the second insulating material layer are patterned to form a protective initial structure J4 located between the first conductive initial structure J1 and the second conductive structure 400, the protective initial structure J4 is provided with a makeshift hole 300a connected to the second connecting hole 400a, and the functional hole J2a includes the second connecting hole 400a and the makeshift hole 300a.

[0157] Optionally, in step S40 , the first insulating layer L1 and the second insulating layer L2 in any of the aforementioned embodiments may also be formed.

[0158] Optionally, the functional structure J2 may include a second conductive structure 400 and a protective preliminary structure J4 or a protective structure 300 located between the second conductive structure 400 and the first conductive preliminary structure J1 . The protective preliminary structure J4 may be used to form the protective structure 300 in any of the aforementioned embodiments.

[0159] Optionally, the orthographic projection of the second conductive structure 400 on the substrate 100 may be located within the orthographic projection of the protective preliminary structure J4 on the substrate 100. The orthographic projection of the protective preliminary structure J4 or the protective structure 300 on the substrate 100 may be located within the orthographic projection of the first conductive preliminary structure J1 on the substrate 100.

[0160] Optionally, in step S40: a functional hole J2a is also opened on the first insulating layer L1 and the second insulating layer L2, and at least a portion of the third conductive preliminary structure J5 can be exposed from the functional hole J2a, that is, the functional hole J2a can be partially opened above the third conductive preliminary structure J5.

[0161] Step S50: Figures 14 to 17 As shown, a circuit layer is prepared and patterned to form at least a portion of a driving circuit C, wherein at least a portion of the functional structure J2 located in the non-display area NA is removed, and at least a portion of the first conductive structure J1 exposed from the functional hole J2a is removed to form a first conductive structure 200 having a first connecting hole 200a.

[0162] Optionally, step S50 may include:

[0163] Step S51: Fig.14 and Fig.15 As shown, a first circuit layer is prepared and patterned to form a portion of a driving circuit C, wherein at least a portion of the functional structure J2 located in the non-display area NA is removed, and at least a portion of the first conductive structure J1 exposed from the functional hole J2a is removed to form a first conductive hole J1a.

[0164] For example, in step S41, the first circuit layer may be patterned to form a device structure between the second insulating layer L2 and the third insulating layer L3. For example, in step S41, the first circuit layer may be patterned to form the source and drain C12 of the transistor C1 in any of the above embodiments.

[0165] Step S52: Fig.16 and Fig.17As shown, a second circuit layer is prepared and patterned to form another portion of the driving circuit C, wherein at least a portion of the functional structure J2 located in the non-display area NA is removed, and at least a portion of the first conductive structure J1 exposed from the first initial connecting hole J1a is removed to form a first connecting hole 200a.

[0166] For example, in step S51, the second circuit layer may be patterned to form a device structure between the third insulating layer L3 and the fourth insulating layer L4. For example, in step S51, the second circuit layer may be patterned to form the first electrical connection structure C3 in any of the above embodiments.

[0167] Optionally, in step S50: at least a portion of the third conductive structure J5 exposed from the functional hole J2a is removed to form a third conductive structure 600 having a third connecting hole 600a.

[0168] Step S60: Fig.18 and Fig.19 As shown, a partition initial structure J3 located in the non-display area NA is prepared, part of the partition initial structure J3 is located in the first connecting hole 200a and connected to the first conductive structure 200, and the partition initial structure J3 includes a body initial structure J31 and an eaves structure 520 located at least partially on the side of the body initial structure J31 away from the first conductive structure 200.

[0169] Optionally, in step S60, a device structure located between the fourth insulating layer L4 and the fifth insulating layer L5 may be simultaneously prepared and formed. For example, in step S60, the second electrical connection structure C4 in any of the above embodiments may be simultaneously prepared and formed.

[0170] Optionally, in step S60 : the partially isolated preliminary structure J3 is located in the third connecting hole 600 a and connected to the third conductive structure 600 .

[0171] Step S70: Fig. 20 and Fig.21 As shown, the body structure J31 is etched to form a body structure 510, and the eaves structure 520 is arranged to protrude from the body structure 510 along a direction parallel to the plane where the substrate 100 is located.

[0172] Optionally, in step S70, the fifth insulating layer L5 and the pixel definition layer PDL in any of the aforementioned embodiments may be prepared and formed simultaneously. The developing electrolyte in any of the aforementioned embodiments may be used to expose and develop the material of the fifth insulating layer L5 and the material of the pixel definition layer PDL, so that during the exposure and development process of the material of the fifth insulating layer L5 and the material of the pixel definition layer PDL, the developing electrolyte may also accelerate the electrochemical etching of the material of the body structure 510 according to the principle of the galvanic cell established by the electrical connection between the material of the first conductive structure 200 and the material of the partition structure 500, thereby facilitating the preparation of the morphology of the eaves structure in the partition structure 500 protruding from the body structure 510 in a direction parallel to the plane where the substrate 100 is located.

[0173] In these optional embodiments, by setting the functional structure J2 in step S40, the functional structure J2 can be used as a protective film layer or a sacrificial film layer to protect the first conductive initial structure J1 below, so that in step S50, for example, in step S51 and step S52, the etching material is not likely to cause excessive etching damage to the material of the first conductive structure 200, so that the first conductive structure 200 formed by the first conductive initial structure J1 can have a good thickness, thereby facilitating the electrochemical etching of the material of the body structure 510 by utilizing the primary battery principle established by electrically connecting the material of the first conductive structure 200 and the material of the partition structure 500 in step S70.

[0174] Furthermore, by opening the functional hole J2a in step S40, in step S50, for example, in steps S51 and S52, the etching material can perform etching processing on at least a portion of the first conductive preliminary structure J1 exposed from the functional hole J2a, so as to form a first conductive structure 200 with a first connecting hole 200a, so that the subsequently formed partition preliminary structure J3 can partially fall into the first connecting hole 200a and connect with the first conductive structure 200, thereby being able to better improve the electrical connection area between the partition preliminary structure J3 and the first conductive structure 200, so as to facilitate the use of the primary battery principle established by the electrical connection between the material of the first conductive structure 200 and the material of the partition structure 500 in step S70 to accelerate the electrochemical etching of the material of the body structure 510.

[0175] In some optional embodiments, the functional structure J2 may include a second conductive structure 400 and a protective preliminary structure J4 located between the second conductive structure 400 and the first conductive preliminary structure J1. Step S30 may include:

[0176] Step 31: Fig. 9 As shown, a first insulating material layer D11 is prepared and formed.

[0177] Step 32: Fig.10 and Fig.11As shown (affected by the drawing scale, Fig.10 and Fig.11 The relationship between the thickness of the conductive device and the thickness of the second conductive structure 400 is not shown in the figure. A conductive device located in the display area AA and a second conductive structure 400 located in the non-display area NA are formed on the first insulating material layer D11 using a half-tone mask. The maximum thickness of the conductive device is greater than the maximum thickness of the second conductive structure 400.

[0178] Optionally, the conductive device may be any device structure located between the first insulating layer L1 and the second insulating layer L2 in the display area AA. Exemplarily, the conductive device may be the second electrode C22 in the storage capacitor C2 located between the first insulating layer L1 and the second insulating layer L2 in the display area AA.

[0179] Optionally, the maximum thickness of the conductive device may be not less than 2800 angstroms and not more than 3200 angstroms, and the maximum thickness of the second conductive structure 400 may be not less than 500 angstroms and not more than 1000 angstroms.

[0180] Step 33: Fig.12 As shown, a second insulating material layer is prepared.

[0181] Optionally, in step S50: Fig.15 As shown, the second conductive structure 400 may be removed.

[0182] Step S60 includes:

[0183] Step S61: preparing a partition material layer;

[0184] Step S62: Fig.19 As shown, the partition material layer is patterned to form a partition preliminary structure J3 located in the non-display area NA, wherein a portion of the protective preliminary structure J4 located on the first conductive structure 200 and not covered by the partition preliminary structure J3 is removed to form a protective structure 300, and a portion of the first conductive structure 200 is exposed.

[0185] Optionally, since the second conductive structure 400 above the protective preliminary structure J4 is removed, in step S50, the material of the protective preliminary structure J4 is susceptible to the etching of the etching material, so that in step S50: Fig.17 As shown, the thickness of the protective preliminary structure J4 can be reduced.

[0186] In these optional embodiments, a second conductive structure 400 having a relatively thin thickness is prepared by using a half-tone mask in step 32, so that the second conductive structure 400 can be etched away as a sacrificial film layer in step S50, i.e., the protective initial structure J4 can be completely exposed after step S50, so as to facilitate etching and removal of the portion of the protective initial structure J4 not covered by the isolation initial structure J3 in step S62, thereby making it easier to expose a larger area of ​​the surface of the first conductive structure 200 facing away from the substrate 100, and further making it easier to increase the contact area between the developing electrolyte and the first conductive structure 200 in step S70.

[0187] Among them, Fig.15 and Fig.17 As shown, in step S50, the first conductive preliminary structure J1 not covered by the protective preliminary structure J4 can be gradually etched away. Fig.17 After etching away the portion of the protective preliminary structure J4 not covered by the isolation preliminary structure J3, the etching material will over-etch the material of the portion of the first conductive structure 200 not covered by the protective preliminary structure J4 to form the second conductive portion 220 in any of the aforementioned embodiments.

[0188] In some other optional embodiments, the functional structure J2 may include a second conductive structure 400 and a protection structure 300 located between the second conductive structure 400 and the first conductive structure J1. Step S30 may include:

[0189] Step 31': Fig. 9 As shown, a first insulating material layer D11 is prepared and formed.

[0190] Step 32': Fig. 22 As shown, a conductive device located in the display area AA and a second conductive structure 400 located in the non-display area NA are formed on the first insulating material layer D11, and the maximum thickness of the conductive device is equal to the maximum thickness of the second conductive structure 400.

[0191] Optionally, the conductive device may be any device structure located between the first insulating layer L1 and the second insulating layer L2 in the display area AA. Exemplarily, the conductive device may be the second electrode C22 in the storage capacitor C2 located between the first insulating layer L1 and the second insulating layer L2 in the display area AA.

[0192] Step 33': Fig.23 As shown, a second insulating material layer is prepared.

[0193] In step S50: Fig.24 As shown, the thickness of the second conductive structure 400 can be reduced.

[0194] Optionally, in step S50 , the first conductive preliminary structure J1 not covered by the protection structure 300 may be gradually etched away.

[0195] In these optional embodiments, by providing a second conductive structure 400 with a thicker thickness, the second conductive structure 400 can better withstand the etching damage of the etching material in step S50, so that part of the second conductive structure 400 can be retained after step S50, so that in step S70, the second conductive structure 400 can also participate in accelerating the electrochemical etching process of the material of the body structure 510 in the partition structure 500, that is, the retained second conductive structure 400 can establish the primary battery principle with the partition primary structure J3.

[0196] The protection structure 300 located between the second conductive structure 400 and the first conductive structure 200 can be well protected by the second conductive structure 400 .

[0197] The embodiment of the third aspect of the present application provides a display device, which includes a display panel formed by the display panel motherboard 10 of any of the above-mentioned embodiments, or includes a display panel prepared by the preparation method of any of the above-mentioned embodiments. Since the display device provided by the embodiment of the third aspect of the present application includes a display panel formed by the display panel motherboard 10 of any of the above-mentioned first aspects, or includes a display panel prepared by the preparation method of any of the above-mentioned second aspects. Therefore, the display device provided by the embodiment of the third aspect of the present application has the beneficial effects of the display panel formed by the display panel motherboard 10 of any of the above-mentioned first aspects or the display panel prepared by the preparation method of any of the above-mentioned second aspects, which will not be repeated here.

[0198] The display device in the embodiments of the present application includes but is not limited to mobile phones, personal digital assistants (PDAs), tablet computers, e-books, televisions, access control systems, smart landline phones, consoles, and other devices with display functions.

[0199] According to the embodiments of the present application as above, these embodiments do not describe all the details in detail, nor do they limit the invention to specific embodiments. Obviously, many modifications and changes can be made based on the above description. This specification selects and specifically describes these embodiments in order to better explain the principles and practical applications of the present application, so that those skilled in the art can make good use of the present application and the modifications based on the present application. The present application is only limited by the claims and their full scope and equivalents.

Claims

1. A display panel motherboard, characterized in that: The display panel motherboard has a display area and a non-display area, and the display panel motherboard includes: substrate; A first conductive structure, disposed in the non-display area and located on one side of the substrate, wherein a first connecting hole is formed in the first conductive structure; A partition structure is arranged in the non-display area and is at least partially located on a side of the first conductive structure away from the substrate, and part of the partition structure is located in the first connecting hole and connected to the first conductive structure, the partition structure includes a body structure and an eaves structure at least partially located on a side of the body structure away from the first conductive structure, and the eaves structure is arranged to protrude from the body structure in a direction parallel to the plane where the substrate is located.

2. The display panel motherboard according to claim 1, characterized in that: The materials of the partition structure and the first conductive structure include metal materials, and the metal activity of the body structure is greater than the metal activity of the first conductive structure; Preferably, the material of the first conductive structure includes molybdenum, and / or the material of the body structure includes aluminum, and / or the material of the eaves structure includes titanium; Preferably, the display panel motherboard further comprises a transistor arranged in the display area and located on one side of the substrate, the transistor comprises a source, a drain and a gate, and the first conductive structure and the gate are arranged in the same layer and the same material.

3. The display panel motherboard according to claim 1, characterized in that: The display panel motherboard further includes a protection structure disposed between the partition structure and the first conductive structure, wherein the protection structure is provided with a clearance hole connected to the first connecting hole; Preferably, the orthographic projection of the protection structure on the substrate is located within the orthographic projection of the first conductive structure on the substrate; Preferably, the material of the protective structure comprises an inorganic material; Preferably, the first conductive structure comprises a first conductive portion and a second conductive portion connected to each other, an orthographic projection of the first conductive portion on the substrate is located within an orthographic projection of the protection structure and / or the partition structure on the substrate, an orthographic projection of the second conductive portion on the substrate does not overlap with an orthographic projection of the protection structure and / or the partition structure on the substrate, and the second conductive portion is at least partially arranged around the first conductive portion; Preferably, the maximum thickness of the second conductive portion is less than the maximum thickness of the first conductive portion; Preferably, the surface of the protection structure away from the clearance hole is coplanar with at least a portion of the side wall surface of the partition structure; Preferably, the display panel motherboard further comprises a second conductive structure disposed between the protection structure and the partition structure, and the second conductive structure is provided with a second connecting hole connected with the clearance opening; Preferably, the orthographic projection of the second conductive structure on the substrate is located within the orthographic projection of the first conductive structure on the substrate; Preferably, a surface of the second conductive structure facing away from the substrate is in contact with the partition structure, and / or a portion of the partition structure is located in the second connecting hole and in contact with the second conductive structure; Preferably, the materials of the partition structure and the second conductive structure include metal materials, and the metal activity of the body structure is greater than the metal activity of the second conductive structure; Preferably, the material of the second conductive structure includes molybdenum, and / or the material of the body structure includes aluminum, and / or the material of the eaves structure includes titanium; Preferably, the maximum thickness of the second conductive structure is less than the maximum thickness of the first conductive structure; Preferably, the orthographic projection of the second conductive structure on the substrate is located within the orthographic projection of the protection structure on the substrate, and / or the orthographic projection of the second conductive structure on the substrate is located within the orthographic projection of the protection structure on the substrate; Preferably, the first conductive structure has a first side surface on a side away from the first connecting hole, and the first side surface is coplanar with a surface of the protective structure on a side away from the clearance hole, and / or the second conductive structure has a second side surface on a side away from the second connecting hole, and the second side surface is coplanar with a surface of the protective structure on a side away from the clearance hole.

4. The display panel motherboard according to any one of claims 1 to 3, characterized in that: The non-display area includes a first area and a second area located at a side of the first area away from the display area, the first conductive structure is arranged in the second area, the partition structure includes a first auxiliary portion located in the second area and a partition portion located in the first area, the partition portion is electrically connected to the first auxiliary portion and the partition portion is arranged around the first auxiliary portion, and a first partition space is provided between the partition portion and the first auxiliary portion; Preferably, the partition structure further includes a connecting portion, at least a portion of which is connected between the partition portion and the first auxiliary portion.

5. The display panel motherboard according to claim 4, characterized in that: The number of the partition parts is at least two, and at least two of the partition parts are mutually nested in the direction from the second area to the first area, and there is a second partition space in a ring shape between at least two of the partition parts, the display panel motherboard also includes a dielectric layer located on one side of the substrate and a third conductive structure arranged between the dielectric layer and the substrate, the dielectric layer is provided with a conductive hole to expose at least part of the third conductive structure, the partition part is at least partially located on the side of the dielectric layer away from the substrate, and part of the partition part is located in the conductive hole and connected to the third conductive structure, and at least two adjacent partition parts are electrically connected through the third conductive structure; Preferably, the dielectric layer and the first conductive structure are spaced apart from each other; Preferably, the display panel motherboard further comprises a protection structure disposed between the partition structure and the first conductive structure, and at least a portion of the protection structure is disposed in the same layer and the same material as the dielectric layer; Preferably, the dielectric layer includes a first insulating layer and a second insulating layer located on a side of the first insulating layer away from the substrate, and the protection structure is provided in the same layer and with the same material as the first insulating layer; Preferably, the third conductive structure is provided in the same layer and with the same material as the first conductive structure; Preferably, the conducting hole is annular; Preferably, the third conductive structure is provided with a third connecting hole connected to the conducting hole, and part of the partition portion is located in the third connecting hole and connected to the third conductive structure; Preferably, the third connecting hole is annular; Preferably, the third conductive structure comprises at least two annular conductive parts and a strip-shaped conductive part connected between adjacent annular conductive parts, and the annular conductive parts are arranged around the first conductive structure; Preferably, part of the partition portion is located in the conducting hole and connected to the annular conductive portion; Preferably, the first region includes a first sub-region and a second sub-region located between the first sub-region and the second region, the partition portion includes a first partition portion, a second partition portion and a third partition portion, the first partition portion and the second partition portion are both located in the first sub-region, the second partition portion is located on a side of the first partition portion away from the display region, the second partition space is provided between the first partition portion and the second partition portion, the first partition portion and the second partition portion are electrically connected via the third conductive structure, and the partition structure further includes a connecting portion, at least part of the connecting portion is connected between the second partition portion and the third partition portion; Preferably, the number of the first partition parts is at least two, adjacent first partition parts are electrically connected via the third conductive structure, and the second partition space is provided between two adjacent first partition parts; Preferably, the number of the third partition parts is at least two, at least part of the connecting parts are connected between adjacent third partition parts, and a third partition space is provided between two adjacent third partition parts.

6. A method for preparing a display panel, characterized in that: The display panel has a display area and a non-display area, and the preparation method includes: preparing a first conductive material layer on a substrate; Performing patterning on the first conductive material layer to form a first conductive initial structure located in the non-display area; preparing and forming a functional layer; Performing patterning on the functional layer to form a functional structure, wherein the functional structure is provided with a functional hole located in the non-display area, and at least a portion of the first conductive structure is exposed from the functional hole; Preparing a circuit layer and patterning the circuit layer to form at least a portion of a driving circuit, wherein at least a portion of the functional structure located in the non-display area is removed, and at least a portion of the first conductive structure exposed from the functional hole is removed to form a first conductive structure with a first connecting hole; A partition primary structure is prepared and formed in the non-display area, wherein a portion of the partition primary structure is located in the first connecting hole and connected to the first conductive structure, and the partition primary structure includes a body primary structure and an eaves structure at least partially located on a side of the body primary structure away from the first conductive structure; The body structure is etched to form a body structure, and the eaves structure is arranged to protrude from the body structure in a direction parallel to the plane where the substrate is located.

7. The preparation method according to claim 6, characterized in that: The functional layer includes a first insulating material layer, a second insulating material layer located on a side of the first insulating material layer away from the substrate, and a second conductive structure located in the non-display area and between the first insulating material layer and the second insulating material layer, wherein the second conductive structure is provided with a second connecting hole, and in the step of patterning the functional layer to form the functional structure: The first insulating material layer and the second insulating material layer are patterned to form a protective primary structure located between the first conductive primary structure and the second conductive structure, wherein the protective primary structure is provided with a clearance hole connected to the second connecting hole, and the functional hole includes the second connecting hole and the clearance hole; Preferably, the step of preparing and forming the functional layer includes: Preparing and forming the first insulating material layer; Forming a conductive device located in the display area and a second conductive structure located in the non-display area on the first insulating material layer by using a half-tone mask, wherein the maximum thickness of the conductive device is greater than the maximum thickness of the second conductive structure; preparing the second insulating material layer; In the step of preparing a circuit layer and patterning the circuit layer to form at least part of the driving circuit: The second conductive structure is removed; The steps of preparing the initial partition structure include: preparing and forming a partition material layer; The partition material layer is patterned to form the partition initial structure located in the non-display area, wherein a portion of the protective initial structure located on the first conductive structure and not covered by the partition initial structure is removed to form a protective structure, and a portion of the first conductive structure is exposed.

8. The preparation method according to claim 6, characterized in that: The functional layer includes a first insulating material layer, a second insulating material layer located on a side of the first insulating material layer away from the substrate, and a second conductive structure located in the non-display area and between the first insulating material layer and the second insulating material layer. The step of preparing the functional layer includes: Preparing and forming the first insulating material layer; Forming a conductive device located in the display area and a second conductive structure located in the non-display area on the first insulating material layer, wherein the maximum thickness of the conductive device is equal to the maximum thickness of the second conductive structure; preparing the second insulating material layer; In the step of preparing a circuit layer and patterning the circuit layer to form at least part of the driving circuit: The thickness of the second conductive structure is reduced.

9. The preparation method according to any one of claims 6 to 8, characterized in that: The steps of preparing a circuit layer and patterning the circuit layer to form at least part of the driving circuit include: Preparing and forming a first circuit layer and patterning the first circuit layer to form a portion of a driving circuit, wherein at least a portion of the functional structure located in the non-display area is removed, and at least a portion of the first conductive structure exposed from the functional hole is removed to form a first primary connecting hole; A second circuit layer is prepared and patterned to form another portion of a driving circuit, wherein at least a portion of the functional structure located in the non-display area is removed, and at least a portion of the first conductive structure exposed from the first initial connecting hole is removed to form a first connecting hole.

10. A display device, characterized in that: A display panel formed by the display panel motherboard as described in any one of claims 1 to 5, or a display panel formed by the preparation method as described in any one of claims 6 to 9.

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