Anti-optical crosstalk display unit and preparation method of display panel

Abstract

The invention discloses an anti-optical crosstalk display unit and a preparation method of a display panel. According to the preparation method of the anti-optical crosstalk display unit, the LED epitaxial structure and the silicon substrate are permanently bonded through a silicon direct bonding technology, and then corresponding to each LED chip, a groove is formed in the silicon substrate and a wavelength conversion material is injected into the groove. The light crosstalk among the LED chips is effectively prevented by utilizing the light-proof characteristic of the silicon substrate, and the color purity is improved; the silicon substrate has excellent heat conductivity, so that heat can be effectively dissipated, and the service life of the LED chip is prolonged; in addition, the thermal expansion coefficient of the silicon substrate is similar to that of the inorganic material film layer, so that the problems of film layer stripping and the like caused by mismatching of thermal expansion and cold contraction are reduced, and the stability and the reliability of the display device are improved.

Description

Technical Field

[0001] The present application relates to the technical field of display panels, and in particular to a method for preparing an anti-cross-light display unit and a display panel. Background Art

[0002] In the field of display technology, with the continuous advancement of science and technology and the growing demand of consumers for high-quality displays, full-color micro-LED display technology has become the forefront of research and application due to its excellent high brightness, high contrast and long life characteristics. This technology integrates multiple LED chips into a single pixel and innovatively combines red and green quantum dot materials for efficient wavelength conversion, thereby achieving a high degree of color restoration and accurate display, bringing a revolutionary breakthrough in display technology.

[0003] However, under the current technical framework, the packaging of color conversion materials faces many challenges. Traditional methods tend to use organic black matrix (BM) materials including resins such as polymethyl methacrylate (PMMA) to encapsulate quantum dots, aiming to reduce the optical crosstalk between adjacent LED chips and ensure color purity. However, this solution has obvious limitations: the thermal conductivity and thermal expansion coefficient of organic BM materials are significantly different from those of inorganic materials such as GaN / SiO2 set in the display panel structure, which not only limits the effective dissipation of heat, but also may cause problems such as reduced stability of the packaging structure and film peeling due to mismatched thermal expansion and contraction, thereby affecting the overall life and performance of the display device. Summary of the invention

[0004] The purpose of the present application is to provide a method for preparing an anti-cross-light display unit and a display panel, which can improve the above-mentioned problems.

[0005] The embodiment of the present application is implemented as follows:

[0006] In the first aspect, the present application provides a method for preparing an anti-cross-light display unit, which includes steps S1 to S4, wherein S1, S2, etc. are merely step identifiers, and the execution order of the method is not necessarily in ascending order of numbers. For example, step S2 may be executed first and then step S1. This application does not impose any restrictions.

[0007] S1, providing a sapphire substrate with an LED epitaxial structure grown thereon, temporarily fixing the LED epitaxial structure on a temporary base plate with the first surface facing away from the sapphire substrate, and then peeling off the sapphire substrate to expose the second surface of the LED epitaxial structure, thereby obtaining a first temporary structure;

[0008] S2, providing a silicon substrate, preparing bonding layers on the silicon substrate and the second surface respectively, fixing the first temporary structure on the silicon substrate by silicon direct bonding technology, and then peeling off the temporary substrate to obtain a second temporary structure;

[0009] S3, preparing grooves on the third surface of the silicon substrate away from the first temporary structure to expose the bonding layer, so that each of the grooves just covers the orthographic projection area of ​​each LED chip, and filling a wavelength conversion material into at least one of the grooves to obtain a third temporary structure;

[0010] S4, cutting the third temporary structure along a direction perpendicular to the bonding layer to obtain various anti-cross-light display units, each of which includes at least one LED chip.

[0011] It can be understood that bonding layers are prepared on the second surface of the silicon substrate and the LED epitaxial structure respectively, and the permanent bonding of the LED epitaxial structure and the silicon substrate is achieved through the silicon direct bonding (SDB) technology. After the silicon substrate is grooved, the wavelength conversion material is injected. On the one hand, the wavelength of the light beam emitted by the LED chip can be converted. On the other hand, the light-proof property of the silicon substrate itself can be used to separate the light-emitting area of ​​each LED chip to prevent cross-talk. In addition, the silicon substrate has better thermal conductivity, which can effectively reduce the heat generated by the chip during use and extend the service life of the chip; moreover, the silicon substrate is closer to the expansion coefficient of the adjacent inorganic material film layer, which can effectively alleviate the problems such as film peeling caused by expansion.

[0012] In an optional embodiment of the present application, the bonding layers are prepared on the silicon substrate and the second surface respectively, including: growing a first SiO2 layer on the second surface by CVD (chemical vapor deposition) technology, and growing a second SiO2 layer on the silicon substrate by CVD technology.

[0013] It is understandable that the main material components of LED epitaxial structure include gallium nitride materials. It is actually a challenging task to achieve permanent bonding between silicon substrate and gallium nitride material layer by silicon direct bonding, because gallium nitride and silicon are two materials with very different properties, and direct bonding is difficult. Therefore, some special process steps are needed to try to achieve this goal, that is, to deposit SiO2 layers as intermediate layers on the gallium nitride material layer and the silicon substrate respectively. At high temperature, chemical reactions or physical adsorption will occur between silicon atoms in the SiO2 intermediate layer, thereby forming a strong bonding interface.

[0014] In an optional embodiment of the present application, temporarily fixing the first surface of the LED epitaxial structure away from the sapphire substrate on a temporary substrate includes: preparing a temporary adhesive layer on the temporary substrate, bonding the first surface of the LED epitaxial structure away from the sapphire substrate to the temporary adhesive layer, and the temporary adhesive layer includes a pyrolytic adhesive layer or a photosensitive adhesive layer.

[0015] Optionally, the stripping of the temporary substrate includes at least one of the following:

[0016] The laser device emits a dissolving light beam toward the temporary substrate, and the dissolving light beam passes through the temporary substrate and irradiates the photosensitive adhesive layer to dissolve the photosensitive adhesive layer; it can be understood that when the adhesive layer is a photosensitive adhesive, the stripping device is usually a light irradiation device. The laser light or other light beam is irradiated through the transfer substrate to the adhesive layer to make it lose its stickiness, thereby achieving stripping.

[0017] The temporary substrate is heated by a heating device, so that the pyrolysis adhesive layer is heated and debonded. It can be understood that when the adhesive layer is a pyrolysis adhesive, the stripping device is a heating device. The adhesive layer between the transfer substrate and the light-emitting diode chip is heated to cause a pyrolysis reaction and lose its viscosity, thereby achieving stripping.

[0018] It can be understood that the temporary adhesive layer is different from the bonding layer. The function of the temporary adhesive layer is to temporarily fix the LED epitaxial structure on the temporary substrate, so as to facilitate peeling off the sapphire substrate and expose the second surface for permanent bonding with the silicon substrate.

[0019] In an optional embodiment of the present application, the step of filling the at least one groove with a wavelength conversion material comprises at least one of the following:

[0020] Injecting red light quantum dot materials into all the grooves, and then filling each of the grooves with transparent encapsulation glue containing diffusion powder for encapsulation;

[0021] Injecting green light quantum dot materials into all the grooves, and then filling each groove with transparent encapsulation glue containing diffusion powder for encapsulation;

[0022] The LED chip is a blue light LED chip. At least three adjacent blue light LED chips in the second temporary structure are divided into a single display group. Red light quantum dot material is injected into at least one groove corresponding to the single display group, and green light quantum dot material is injected into at least one groove corresponding to the single display group. At least one groove corresponding to the single display group is retained without being injected with any quantum dot material, and then each groove is filled with a transparent packaging glue containing diffusion powder for packaging.

[0023] Optionally, the anti-cross-light display unit includes any one of the following:

[0024] A single LED chip and a single groove injected with the red light quantum dot material;

[0025] A single LED chip and a single groove injected with the green light quantum dot material;

[0026] A single display group and a corresponding groove.

[0027] In an optional embodiment of the present application, the LED epitaxial structure includes a GaN buffer layer, an N-type doped GaN layer, a quantum well light-emitting layer, and a P-type doped GaN layer grown in sequence on the sapphire substrate; between step S2 and step S3, it also includes: cutting the LED epitaxial structure to obtain individual LED units of the same specification, preparing a first electrode in contact with the N-type doped GaN layer on each of the LED units, and preparing a second electrode in contact with the P-type doped GaN layer and separated from the first electrode on each of the LED units to form individual LED chips.

[0028] In an optional embodiment of the present application, a reflective layer is prepared on the surface of the bonding layer of the third temporary structure to wrap each of the LED chips and expose the first electrode and the second electrode of each of the LED chips.

[0029] In an optional embodiment of the present application, between step S2 and step S3, it also includes: applying packaging glue on the reflective layer to wrap each of the LED chips; opening holes in the packaging glue to expose each electrode of each LED chip; preparing signal contact pads on the surface of the packaging glue to connect the corresponding electrodes respectively.

[0030] In a second aspect, the present application discloses a method for preparing a display panel, comprising:

[0031] Providing a display backplane, the display backplane comprising a display driving circuit;

[0032] An anti-cross-light display unit array is arranged on the display backplane and electrically connected to the display driving circuit, and the anti-cross-light display unit is lit when driven by the display driving circuit, wherein the anti-cross-light display unit is made by the preparation method of the anti-cross-light display unit according to any one of claims 1 to 9.

[0033] Beneficial effects:

[0034] The present application discloses a method for preparing an anti-crosstalk display unit, in which the LED epitaxial structure is permanently bonded to the silicon substrate through silicon direct bonding technology, and then a groove is made on the silicon substrate corresponding to each LED chip to inject a wavelength conversion material. Not only can the light-proof property of the silicon substrate be used to effectively prevent light crosstalk between LED chips and improve color purity; the silicon substrate can also effectively dissipate heat and extend the service life of the LED chip by virtue of its excellent thermal conductivity; in addition, the thermal expansion coefficient of the silicon substrate is similar to that of the inorganic material film layer, which reduces problems such as film peeling caused by mismatch of thermal expansion and contraction, and improves the stability and reliability of the display device.

[0035] In order to make the above-mentioned objects, features and advantages of the present application more obvious and understandable, optional embodiments are specifically listed below and described in detail with reference to the attached drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0036] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for use in the embodiments will be briefly introduced below. It should be understood that the following drawings only show certain embodiments of the present application and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other related drawings can be obtained based on these drawings without paying creative work.

[0037] Figure 1 It is a structural schematic diagram of an existing display unit;

[0038] Figure 2 It is a schematic diagram of a sapphire substrate and a temporary substrate on which an LED epitaxial structure is grown provided by the present application;

[0039] Figure 3 yes Figure 2 Schematic diagram of temporary fixing of an LED epitaxial structure and a temporary substrate shown;

[0040] Figure 4 yes Figure 3 The structure shown is a schematic diagram of the structure of the first temporary structure after the sapphire substrate is peeled off;

[0041] Figure 5 It is a schematic diagram of preparing bonding layers on a silicon substrate and a first temporary substrate respectively provided by the present application;

[0042] Figure 6 It is a schematic diagram of direct silicon bonding between a silicon substrate and an LED epitaxial structure;

[0043] Figure 7 yes Figure 6 The structure shown is a second temporary structure after the temporary substrate is peeled off;

[0044] Figure 8 is Figure 7A schematic diagram of the structure of preparing an LED chip on the second temporary structure shown;

[0045] Fig. 9 is Figure 8 A schematic diagram of a third temporary structure for preparing a wavelength conversion unit in the structure shown;

[0046] Fig.10 It is a schematic diagram of another third temporary structure provided by the present application. DETAILED DESCRIPTION

[0047] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0048] As a new generation of display technology, Micro LED has higher brightness, better luminous efficiency, but lower power consumption than the existing Organic Light-Emitting Diode (OLED) technology, and has great application prospects. In the ideal state of Micro LED display, each pixel should include red, green and blue Micro LED chips, but the red light Micro-LED chip has always been an important reason for the development of current Micro-LED display technology due to its brightness attenuation problem at a small size. Due to the characteristics of its epitaxial material, it is difficult for red light to improve its performance to the level of blue-green light. Therefore, different ways have emerged to solve this problem, the most important of which is quantum dot color conversion technology. In this type of display, quantum dot materials, as a key component, can absorb light and re-emit light of different wavelengths. This feature can be used to convert the wavelength of the blue light beam emitted by the blue light Micro LED chip through the red light quantum dot material, thereby outputting a red light beam; it can also be used to convert the wavelength of the blue light beam emitted by the blue light Micro LED chip through the green light quantum dot material, thereby outputting a green light beam. Therefore, by adding quantum dot materials to the display, the need for multi-color light-emitting units can be reduced, and full-color display can be achieved with only single-color light-emitting units, which has significant advantages in reducing production costs and improving production efficiency.

[0049] like Figure 1The display unit shown includes: a substrate 101, a first blue light Micro-LED chip 201, a second blue light Micro-LED chip 202, a third blue light Micro-LED chip 203, a red light filter unit 301, a green light filter unit 302, a blue light filter unit 303, a red light quantum dot unit 401, a green light quantum dot unit 402 and a light-transmitting unit 403, a water and oxygen barrier layer 102, a light-transmitting filling layer 103, and a black glue 104. The blue light beam emitted by the first blue light Micro-LED chip 201 passes through the light transmission unit 403 and is filtered by the blue light filter unit 303 to emit a blue light beam; the blue light beam emitted by the second blue light Micro-LED chip 202 is converted into a green light beam by the green light quantum dot unit 402, and then filtered by the green light filter unit 302 to emit a green light beam; the blue light beam emitted by the third blue light Micro-LED chip 203 is converted into a red light beam by the red light quantum dot unit 401, and then filtered by the red light filter unit 301 to emit a red light beam. In order to prevent light crosstalk between sub-pixels of different colors, an organic black matrix (BM) material is filled between the red light quantum dot unit 401, the green light quantum dot unit 402 and the light transmission unit 403 to encapsulate the quantum dots. The organic BM material generally includes resin materials such as polymethyl methacrylate (PMMA). Since insulating spacer materials such as the water and oxygen barrier layer 102 and the light-transmitting filling layer 103 generally contain inorganic materials such as SiO2, the thermal conductivity and thermal expansion coefficient of the organic BM material are significantly different from those of the adjacent SiO2 and other inorganic materials. This not only limits the effective dissipation of heat, but may also lead to problems such as reduced stability of the packaging structure and film peeling due to the mismatch of thermal expansion and contraction.

[0050] The purpose of the present application is to provide a method for preparing an anti-cross-light display unit and a display panel, which can improve the above-mentioned problems.

[0051] In the first aspect, the present application provides a method for preparing an anti-cross-light display unit, which includes steps S1 to S4, wherein S1, S2, etc. are merely step identifiers, and the execution order of the method is not necessarily in ascending order of numbers. For example, step S2 may be executed first and then step S1. This application does not impose any restrictions.

[0052] S1, providing a sapphire substrate with an LED epitaxial structure grown thereon, temporarily fixing the LED epitaxial structure on a temporary base plate with the first surface facing away from the sapphire substrate, and then peeling off the sapphire substrate to expose the second surface of the LED epitaxial structure, thereby obtaining a first temporary structure.

[0053] like Figure 2As shown, a blue light LED epitaxial structure is grown on a sapphire substrate 10, including a GaN buffer layer 11, an N-type doped GaN layer 12, a quantum well light-emitting layer 13, and a P-type doped GaN layer 14 stacked in sequence; a temporary substrate 20 is also provided in the figure, and a temporary adhesive layer 21 is prepared on the temporary substrate 20, and the temporary adhesive layer 21 may include a pyrolytic adhesive layer or a photosensitive adhesive layer.

[0054] like Figure 3 As shown, the LED epitaxial structure is bonded to the temporary adhesive layer 21 on the first surface 140 of the sapphire substrate facing away from the first surface 140 of the sapphire substrate. Figure 4 As shown, a laser beam of a specific wavelength can be used to irradiate the interface between the sapphire substrate 10 and the GaN buffer layer 11; the photon energy of these wavelengths is lower than the band gap energy of sapphire, but higher than the band gap energy of GaN, so the laser energy is mainly absorbed by the GaN layer. The absorbed laser energy causes the local temperature of the GaN buffer layer to rise. When the temperature reaches a certain threshold, the GaN buffer layer begins to decompose, forming metal gallium and nitrogen, thereby peeling off the sapphire substrate 10 and exposing the second surface 110 of the LED epitaxial structure.

[0055] S2, providing a silicon substrate, preparing bonding layers on the silicon substrate and the second surface respectively, fixing the first temporary structure on the silicon substrate by silicon direct bonding technology, and then peeling off the temporary substrate to obtain the second temporary structure.

[0056] like Figure 5 As shown, a first SiO2 layer 15 is grown on the second surface 110 of the first temporary structure by CVD technology, and a second SiO2 layer 31 is also grown on the silicon substrate 30 by CVD technology, and then the first temporary structure is permanently fixed on the silicon substrate 30 by silicon direct bonding technology to form a bonding layer 40, as shown in FIG. Figure 6 As shown. The main material components of LED epitaxial structure include gallium nitride material. It is actually a challenging task to achieve permanent bonding of silicon substrate and gallium nitride material layer by direct silicon bonding, because gallium nitride and silicon are two materials with very different properties, and direct bonding is difficult. Therefore, some special process steps are needed to try to achieve this goal, that is, to deposit SiO2 layers as intermediate layers on the gallium nitride material layer and the silicon substrate respectively. At high temperature, chemical reactions or physical adsorption will occur between silicon atoms in the SiO2 intermediate layer, thereby forming a strong bonding interface.

[0057] In an optional embodiment of the present application, peeling off the temporary substrate includes at least one of the following:

[0058] The laser device emits a dissolving light beam toward the temporary substrate, and the dissolving light beam passes through the temporary substrate and irradiates the photosensitive adhesive layer to dissolve the photosensitive adhesive layer; it can be understood that when the adhesive layer is a photosensitive adhesive, the stripping device is usually a light irradiation device. Through the transmitting mechanism, laser light or other light beams are irradiated through the transfer substrate to the adhesive layer, making it lose its stickiness, thereby achieving stripping.

[0059] The temporary substrate is heated by a heating device, so that the pyrolysis adhesive layer is heated and debonded. It can be understood that when the adhesive layer is a pyrolysis adhesive, the stripping device is a heating device. The adhesive layer between the transfer substrate and the light-emitting diode chip is heated to cause a pyrolysis reaction and lose its viscosity, thereby achieving stripping.

[0060] It can be understood that the temporary adhesive layer is different from the bonding layer. The function of the temporary adhesive layer is to temporarily fix the LED epitaxial structure on the temporary substrate, so as to facilitate peeling off the sapphire substrate and expose the second surface for permanent bonding with the silicon substrate.

[0061] like Figure 7 Shown Figure 6 The structure shown is a second temporary structure obtained by peeling off the temporary substrate 20 .

[0062] In an optional embodiment of the present application, between step S2 and step S3, it also includes: cutting the LED epitaxial structure to obtain individual LED units of the same specification, preparing a first electrode in contact with the N-type doped GaN layer on each LED unit, and preparing a second electrode in contact with the P-type doped GaN layer and separated from the first electrode on each LED unit to form individual LED chips.

[0063] like Figure 8 The LED epitaxial structure is cut to obtain four LED units, namely, a first LED unit 51, a second LED unit 52, a third LED unit 53, and a fourth LED unit 54. Although only four LED units are shown in the figure, in fact, more LED units arranged in an array can be obtained by cutting the LED epitaxial structure on the entire silicon base 30. Taking the first LED unit 51 as an example, a first electrode 511 in contact with the N-type doped GaN layer is prepared on the first LED unit 51, and a second electrode 512 in contact with the P-type doped GaN layer and separated from the first electrode 511 is prepared. By preparing the electrodes on each LED unit, a first LED chip 61, a second LED chip 62, a third LED chip 63, and a fourth LED chip 64 are obtained.

[0064] S3, preparing grooves on the third surface of the silicon substrate away from the first temporary structure to expose the bonding layer, so that each groove just covers the positive projection area of ​​each LED chip, and filling wavelength conversion material into at least one groove to obtain a third temporary structure.

[0065] like Fig. 9 As shown, four grooves are prepared on the silicon substrate 30, namely, a first groove 71 corresponding to the first LED chip 61, a second groove 72 corresponding to the second LED chip 62, a third groove 73 corresponding to the third LED chip 63, and a fourth groove 74 corresponding to the fourth LED chip 64. Although only four grooves are shown in the figure, more grooves arranged in an array can be obtained in fact corresponding to the number of LED chips.

[0066] like Fig. 9 As shown, the red light quantum dot material 81 can be injected into all the grooves, and then the transparent encapsulation glue 90 containing diffusion powder can be filled in each groove for packaging. The figure only illustrates the situation of the red light quantum dot material. In fact, the green light quantum dot material can also be injected into all the grooves, and then the transparent encapsulation glue containing diffusion powder can be filled in each groove for packaging.

[0067] Fig.10 Another situation of quantum dot material injection is illustrated. At this time, the LED chips are all blue LED chips. The three adjacent blue LED chips in the second temporary structure are divided into a single display group, that is, the first LED chip 61, the second LED chip 62, and the third LED chip 63 are divided into the same display group, and the fourth LED chip 64 shown in the figure belongs to another display group. Red light quantum dot material 81 is injected into the first groove 71 corresponding to the single display group, and green light quantum dot material 82 is injected into the second groove 72 corresponding to the single display group, and the third groove 73 corresponding to the single display group is kept without any quantum dot material injected, and then the transparent encapsulation glue 90 containing diffusion powder is filled in each groove for encapsulation.

[0068] In an optional embodiment of the present application, the silicon substrate may be subjected to mechanical grinding and thinning treatment before preparing the grooves on the third surface.

[0069] In an optional embodiment of the present application, Fig. 9 and Fig.10 As shown, a reflective layer 41 is prepared on the surface of the bonding layer of the third temporary structure to wrap each LED chip and expose the first electrode and the second electrode of each LED chip.

[0070] S4, cutting the third temporary structure along a direction perpendicular to the bonding layer to obtain various anti-cross-light display units, each of which includes at least one LED chip.

[0071] Optionally, the anti-cross-light display unit includes any one of the following:

[0072] A single LED chip and a single groove filled with red light quantum dot material, such as along Fig. 9 The anti-cross-light display unit obtained by cutting the third temporary structure with the dotted line in FIG.

[0073] A single LED chip and a single groove injected with green quantum dot material;

[0074] A single display group and corresponding groove, such as along Fig.10 The anti-cross-light display unit is obtained by cutting the third temporary structure with the dotted line in FIG.

[0075] In an optional embodiment of the present application, between step S2 and step S3, it also includes: applying packaging glue on the reflective layer to wrap each LED chip; opening holes in the packaging glue to expose each electrode of each LED chip; preparing signal contact pads on the surface of the packaging glue to connect the corresponding electrodes respectively.

[0076] The present application discloses a method for preparing an anti-cross-light display unit, wherein bonding layers are prepared on the second surface of a silicon substrate and an LED epitaxial structure, respectively, and a permanent bonding between the LED epitaxial structure and the silicon substrate is achieved through silicon direct bonding (SDB) technology. After the silicon substrate is grooved, a wavelength conversion material is injected. On the one hand, the wavelength of the light beam emitted by the LED chip can be converted. On the other hand, the light-proof property of the silicon substrate itself can be used to separate the light-emitting area of ​​each LED chip, thereby preventing cross-light. In addition, the silicon substrate has better thermal conductivity, which can effectively reduce the heat generated by the chip during use and extend the service life of the chip; moreover, the silicon substrate is closer to the expansion coefficient of the adjacent inorganic material film layer, which can effectively alleviate problems such as film peeling caused by expansion.

[0077] In a second aspect, the present application discloses a method for preparing a display panel, comprising:

[0078] A display backplane is provided, wherein the display backplane includes a display driving circuit;

[0079] An anti-cross-light display unit array is arranged on a display back panel and electrically connected to a display driving circuit, and the anti-cross-light display unit is lit when driven by the display driving circuit, wherein the anti-cross-light display unit is made by the preparation method of the anti-cross-light display unit as described in any one of the first aspects.

[0080] The expressions "first", "second", "the first" or "the second" used in various embodiments of the present disclosure may modify various components regardless of order and / or importance, but these expressions do not limit the corresponding components. The above expressions are only configured for the purpose of distinguishing an element from other elements. For example, a first user device and a second user device represent different user devices, although both are user devices. For example, a first element may be referred to as a second element, and similarly, a second element may be referred to as a first element without departing from the scope of the present disclosure.

[0081] When one element (e.g., a first element) is referred to as being "(operably or communicatively) coupled" or "(operably or communicatively) coupled to" or "connected to" another element (e.g., a second element), it is understood that the one element is directly connected to the other element or the one element is indirectly connected to the other element via yet another element (e.g., a third element). Conversely, it is understood that when an element (e.g., a first element) is referred to as being "directly connected" or "directly coupled" to another element (the second element), no element (e.g., a third element) is interposed between the two.

[0082] It should be noted that, in this article, the terms "include", "comprises" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also includes other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, an element defined by the sentence "includes a ..." does not exclude the existence of other identical elements in the process, method, article or device including the element. In addition, components, features, and elements with the same name in different embodiments of the present application may have the same meaning or different meanings, and their specific meanings need to be determined by their explanation in the specific embodiment or further combined with the context of the specific embodiment.

[0083] The above description is only an optional embodiment of the present application and an explanation of the technical principles used. Those skilled in the art should understand that the scope of the invention involved in the present application is not limited to the technical solution formed by a specific combination of the above technical features, but should also cover other technical solutions formed by any combination of the above technical features or their equivalent features without departing from the above invention concept. For example, the above features are replaced with the technical features with similar functions disclosed in this application (but not limited to) by each other.

[0084] As used herein, the words "if" and "if" may be interpreted as "at the time of" or "when" or "in response to determining" or "in response to detecting", depending on the context. Similarly, the phrases "if it is determined" or "if (stated condition or event) is detected" may be interpreted as "when it is determined" or "in response to determining" or "when detecting (stated condition or event)" or "in response to detecting (stated condition or event)", depending on the context.

[0085] The above description is only an optional embodiment of the present application and an explanation of the technical principles used. Those skilled in the art should understand that the scope of the invention involved in the present application is not limited to the technical solution formed by a specific combination of the above technical features, but should also cover other technical solutions formed by any combination of the above technical features or their equivalent features without departing from the above invention concept. For example, the above features are replaced with the technical features with similar functions disclosed in this application (but not limited to) by each other.

[0086] The above description is only an optional embodiment of the present application and is not intended to limit the present application. For those skilled in the art, the present application may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application shall be included in the protection scope of the present application.

Claims

1. A method for preparing an anti-cross-light display unit, characterized in that: The following steps are involved: S1, providing a sapphire substrate with an LED epitaxial structure grown thereon, temporarily fixing the LED epitaxial structure on a temporary base plate with the first surface facing away from the sapphire substrate, and then peeling off the sapphire substrate to expose the second surface of the LED epitaxial structure, thereby obtaining a first temporary structure; S2, providing a silicon substrate, preparing bonding layers on the silicon substrate and the second surface respectively, fixing the first temporary structure on the silicon substrate by silicon direct bonding technology, and then peeling off the temporary substrate to obtain a second temporary structure; S3, preparing grooves on the third surface of the silicon substrate away from the first temporary structure to expose the bonding layer, so that each of the grooves just covers the orthographic projection area of ​​each LED chip, and filling a wavelength conversion material into at least one of the grooves to obtain a third temporary structure; S4, cutting the third temporary structure along a direction perpendicular to the bonding layer to obtain various anti-cross-light display units, each of which includes at least one LED chip.

2. The method for preparing the anti-cross-light display unit according to claim 1, characterized in that: The bonding layers are prepared on the silicon substrate and the second surface respectively, including: growing a first SiO2 layer on the second surface by CVD technology, and growing a second SiO2 layer on the silicon substrate by CVD technology.

3. The method for preparing the anti-cross-light display unit according to claim 2, characterized in that: The method of temporarily fixing the first surface of the LED epitaxial structure away from the sapphire substrate on a temporary base plate includes: preparing a temporary adhesive layer on the temporary base plate, bonding the first surface of the LED epitaxial structure away from the sapphire substrate to the temporary adhesive layer, and the temporary adhesive layer includes a pyrolytic adhesive layer or a photosensitive adhesive layer.

4. The method for preparing the anti-cross-light display unit according to claim 3, characterized in that: The stripping of the temporary substrate comprises at least one of the following: Emits a debonding beam toward the temporary substrate through a laser device, and the debonding beam is irradiated onto the photosensitive adhesive layer through the temporary substrate to debond the photosensitive adhesive layer; The temporary substrate is heated by a heating device, so as to heat and debond the thermal debonding layer.

5. The method for preparing the anti-cross-light display unit according to claim 1, characterized in that: Filling the wavelength conversion material into at least one of the grooves includes at least one of the following: Injecting red light quantum dot materials into all the grooves, and then filling each of the grooves with transparent encapsulation glue containing diffusion powder for encapsulation; Injecting green light quantum dot materials into all the grooves, and then filling each groove with transparent encapsulation glue containing diffusion powder for encapsulation; The LED chip is a blue light LED chip. At least three adjacent blue light LED chips in the second temporary structure are divided into a single display group. Red light quantum dot material is injected into at least one groove corresponding to the single display group, and green light quantum dot material is injected into at least one groove corresponding to the single display group. At least one groove corresponding to the single display group is retained without being injected with any quantum dot material, and then each groove is filled with a transparent packaging glue containing diffusion powder for packaging.

6. The method for preparing the anti-cross-light display unit according to claim 5, characterized in that: The anti-cross-light display unit includes any one of the following: A single LED chip and a single groove injected with the red light quantum dot material; A single LED chip and a single groove injected with the green light quantum dot material; A single display group and a corresponding groove.

7. The method for preparing an anti-cross-light display unit according to any one of claims 1 to 6, characterized in that: The LED epitaxial structure comprises a GaN buffer layer, an N-type doped GaN layer, a quantum well light-emitting layer, and a P-type doped GaN layer sequentially grown on the sapphire substrate; The method between step S2 and step S3 also includes: cutting the LED epitaxial structure to obtain LED units of the same specification, preparing a first electrode in contact with the N-type doped GaN layer on each LED unit, and preparing a second electrode in contact with the P-type doped GaN layer and separated from the first electrode on each LED unit to form individual LED chips.

8. The method for preparing the anti-cross-light display unit according to claim 7, characterized in that: A reflective layer is prepared on the surface of the bonding layer of the third temporary structure to wrap each of the LED chips and expose the first electrode and the second electrode of each of the LED chips.

9. The method for preparing the anti-cross-light display unit according to claim 8, characterized in that: Between step S2 and step S3, the following steps are also included: applying packaging glue on the reflective layer to wrap each of the LED chips; opening holes in the packaging glue to expose each electrode of each LED chip; and preparing signal contact pads on the surface of the packaging glue to connect corresponding electrodes respectively.

10. A method for preparing a display panel, characterized in that: include: Providing a display backplane, the display backplane comprising a display driving circuit; An anti-cross-light display unit array is arranged on the display backplane and electrically connected to the display driving circuit, and the anti-cross-light display unit is lit when driven by the display driving circuit, wherein the anti-cross-light display unit is made by the preparation method of the anti-cross-light display unit according to any one of claims 1 to 9.

Images