Display panel and preparation method thereof

Abstract

The invention provides a display panel and a preparation method thereof. The display panel comprises an array substrate, a light-emitting chip and a reflective layer. The light emitting chip is arranged on the array substrate; the light reflecting layer is arranged on the array substrate and surrounds the light emitting chip. The reflective layer gathers light emitted by the side face of the light-emitting chip, and the light is emitted from the top face of the light-emitting chip, so that the light-emitting efficiency of the light-emitting chip and the front display brightness of the display panel are improved.

Description

Technical Field

[0001] The present invention relates to the field of display devices, and in particular to a display panel and a method for preparing the same. Background Art

[0002] With the iterative development of display technology, the traditional LCD industry is facing severe challenges. Currently, many companies are developing cutting-edge display technologies such as AMOLED (Active-Matrix Organic Light-Emitting Diode) and Micro-LED (micro light-emitting diode). Micro-LED technology is regarded as the ultimate display technology due to its advantages of high contrast, high brightness, long life and low cost. Micro-LED is essentially an integrated point light source. It has obvious point light source characteristics when it emits light. Side emission makes most of the light not effectively utilized. A solution is needed to solve this problem.

[0003] The cost of making the side light-blocking layer in the array substrate process is high, and it will increase the process complexity of the array substrate process, affecting the yield of the array substrate. In addition, as one of the most important links in the entire Micro-LED display technology, the light-blocking film layer in the array substrate process will greatly affect the transfer yield. Summary of the invention

[0004] The purpose of the present invention is to provide a display panel and a method for preparing the same, so as to solve the technical problems in the prior art that the side light emission of Micro-LED makes most of the light not effectively utilized, and the preparation cost of the side light blocking layer is high and the process is complicated.

[0005] To achieve the above object, the present invention provides a display panel, which includes an array substrate, a light-emitting chip and a reflective layer. The light-emitting chip is arranged on the array substrate. The reflective layer is arranged on the array substrate and surrounds the side of the light-emitting chip.

[0006] Furthermore, the display panel further includes a light blocking layer, and the light blocking layer is arranged between the light emitting chip and the array substrate.

[0007] Furthermore, the light-blocking layer covers a surface of the array substrate facing the light-emitting chip. The light-emitting chip is disposed on the light-blocking layer and is electrically connected to the array substrate.

[0008] Furthermore, the reflective layer is made of insulating material.

[0009] Furthermore, the thickness of the reflective layer is smaller than the thickness of the light emitting chip.

[0010] Furthermore, the horizontal plane where the top surface of the reflective layer is located is lower than the horizontal plane where the top surface of the light-emitting chip is located.

[0011] Furthermore, a thin film transistor is provided in the array substrate, and the light emitting chip is electrically connected to the thin film transistor.

[0012] The present invention also provides a method for manufacturing a display panel, the method comprising the following steps: forming a light-emitting chip on an array substrate; providing a mask plate, the mask plate comprising a shielding area and a hollowing area. A reflective layer surrounding the light-emitting chip is formed on the array substrate by the mask plate, the shielding area of ​​the mask plate corresponds to the light-emitting chip, and the hollowing area corresponds to the reflective layer.

[0013] Furthermore, before the step of forming the light-emitting chip on the array substrate, the step further includes forming a light-blocking layer on the array substrate.

[0014] Furthermore, the mask plate has a shielding area and a hollow area surrounding the shielding area, the shielding area corresponds to the light-emitting chip, and the hollow area corresponds to the reflective layer.

[0015] The advantages of the present invention are: a display panel and a preparation method thereof provided in the present invention prepare a reflective layer on the side of the light-emitting chip to prevent the light from the side of the light-emitting chip, so that the light emitted by the light-emitting chip is concentrated and emitted from the top surface of the light-emitting chip, thereby improving the front display brightness of the display panel. In addition, the preparation process of the display panel is simple, the materials are easy to obtain, the production cost is reduced, and the transfer yield of the light-emitting chip is not affected. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative work.

[0017] Figure 1 is a schematic diagram of a layered structure of a display panel in an embodiment of the present invention;

[0018] Figure 2 for Figure 1 The dotted box A shows an enlarged schematic diagram of the layered structure of the panel;

[0019] Figure 3 is a schematic flow chart of a method for preparing a display panel according to an embodiment of the present invention;

[0020] Figure 4Schematic diagram of the layered structure of the display panel after step S10 in an embodiment of the present invention;

[0021] Figure 5 Schematic diagram of the layered structure of the display panel after step S20 in an embodiment of the present invention;

[0022] Figure 6 FIG. 4 is a plan view of a mask plate in an embodiment of the present invention.

[0023] The components in the figure are shown as follows:

[0024] Display panel 1; array substrate 10;

[0025] Substrate layer 101; light shielding layer 102;

[0026] Buffer layer 103; Active layer 104;

[0027] Gate insulating layer 105; Gate layer 106;

[0028] Dielectric layer 107; source and drain layer 108;

[0029] Passivation layer 109; planarization layer 110;

[0030] Pixel electrode layer 111; light blocking layer 20;

[0031] Light emitting chip 30; light reflecting layer 40;

[0032] Mask plate 2; shielding area 201;

[0033] Hollow area 202; first surface S1;

[0034] Second surface S2; third surface S3. DETAILED DESCRIPTION

[0035] The preferred embodiments of the present invention are described below with reference to the drawings in the specification to prove that the present invention can be implemented. The embodiments of the invention can fully introduce the present invention to those skilled in the art, making its technical content clearer and easier to understand. The present invention can be embodied through many different forms of embodiments of the invention, and the protection scope of the present invention is not limited to the embodiments mentioned in the text.

[0036] In the drawings, components with the same structure are indicated by the same numerical reference numerals, and components with similar structures or functions are indicated by similar numerical reference numerals. The size and thickness of each component shown in the drawings are arbitrarily shown, and the present invention does not limit the size and thickness of each component. In order to make the illustration clearer, the thickness of the components is appropriately exaggerated in some places in the drawings.

[0037] In addition, the following descriptions of the various embodiments of the invention are made with reference to the attached diagrams to illustrate specific embodiments of the invention that the present invention can be implemented with. The directional terms mentioned in the present invention, such as "upper", "lower", "front", "back", "left", "right", "inner", "outer", "side", etc., are only with reference to the directions of the attached drawings. Therefore, the directional terms used are for better and clearer description and understanding of the present invention, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as limiting the present invention. In addition, the terms "first", "second", "third", etc. are used for descriptive purposes only and cannot be understood as indicating or implying relative importance.

[0038] When some components are described as being "on" another component, the component may be directly placed on the other component; there may also be an intermediate component on which the component is placed, and the intermediate component is placed on the other component. When a component is described as being "mounted on" or "connected to" another component, the two may be understood to be directly "mounted on" or "connected", or one component may be indirectly "mounted on" or "connected to" another component via an intermediate component.

[0039] In an embodiment of the present invention, a display device is provided, wherein the display device comprises a display panel 1, wherein the display panel 1 is used to provide a display image for the display device, and the display device may be any electronic product or component having a display function. Figure 1-Figure 2 As shown, the display panel 1 includes an array substrate 10 , a light blocking layer 20 , a light emitting chip 30 and a light reflecting layer 40 .

[0040] The array substrate 10 includes a plurality of thin film transistors and a base layer, and the thin film transistor array is arranged on the base layer. The thin film transistor includes a conductive structure and an insulating structure. The conductive structure includes an active layer 104, a gate layer 106 and a source-drain layer 108. The insulating structure includes a gate insulating layer 105, a dielectric layer 107, a passivation layer 109, a planar layer 110, etc.

[0041] The active layer 104 is disposed on the base layer, the gate insulating layer 105 is disposed on the active layer 104, and the gate layer 106 is disposed on the gate insulating layer 105. The dielectric layer 107 is disposed on the base layer and covers the active layer 104, the gate insulating layer 105, and the gate layer 106. The source-drain electrode layer 108 is disposed on the dielectric layer 107 and is electrically connected to the active layer 104 through the dielectric layer 107. The passivation layer 109 is disposed on the dielectric layer 107 and covers the source-drain electrode layer 108. The planarization layer 110 is disposed on the passivation layer 109.

[0042] The base layer includes a substrate layer 101, a light shielding layer 102 and a buffer layer 103. The light shielding layer 102 is disposed on the substrate layer 101 and is disposed corresponding to the active layer 104. The buffer layer 103 is disposed on the substrate layer 101 and covers the light shielding layer 102, and the active layer 104 is disposed on a surface of the buffer layer 103 away from the light shielding layer 102.

[0043] The light shielding layer 102 is generally made of an opaque metal material, which is used to shield the active layer 104 from light to prevent light from affecting the operation of the active layer 104. The buffer layer 103 and the insulating structure layer are generally made of inorganic materials such as silicon oxide and silicon nitride. The buffer layer 103 and the insulating structure layer are used to insulate and protect the conductive traces in the thin film transistor to prevent short circuits between the traces. Among them, the planarization layer 110 is also used to planarize the surface of the thin film transistor.

[0044] The array substrate 10 further includes a pixel electrode layer 111 , which is disposed on the planar layer 110 and is electrically connected to the source-drain electrode layer 108 through the planar layer 110 and the passivation layer 109 .

[0045] The light blocking layer 20 is disposed on the flat layer 110 of the array substrate 10 and covers the exposed surface of the flat layer 110. The light blocking layer 20 is made of a light-shielding photoresist material. The light blocking layer 20 can prevent the light emitted by the light-emitting chip 30 from leaking from the side of the array substrate 10. The light blocking layer 20 is provided with a plurality of openings, which correspond to the pixel electrode layer 111, so that a surface of the pixel electrode layer 111 away from the flat layer 110 is exposed.

[0046] The light-emitting chip 30 is arranged in the opening and is electrically connected to the pixel electrode layer 111 in the opening. The light-emitting chip 30 is electrically connected to the thin film transistor in the array substrate 10 through the pixel electrode layer 111, so as to obtain electric energy and realize self-luminescence. The light-emitting chip 30 can be one of the self-luminous chips 30 such as mini light-emitting diode (Mini-LED) and micro light-emitting diode (Micro-LED). The light-emitting chip 30 can emit any one of white light, red light, blue light and green light. When all the light-emitting chips 30 in the display panel 1 emit the same color, it can realize the filtering conversion of the light color through the color filter, so as to realize color display. When the light-emitting chips 30 in the display panel 1 respectively emit light of different colors, it can directly realize color display.

[0047] The reflective layer 40 is disposed on a surface of the light blocking layer 20 away from the array substrate 10, and surrounds the side of the light emitting chip 30. The reflective layer 40 is made of an insulating material with reflective properties, such as a polyester material or a resin material doped with a reflective material. The reflective layer 40 is used to prevent light from being emitted from the side of the light emitting chip 30, to gather the light, and to emit it from the top surface of the light emitting chip 30, thereby reducing the waste of light and improving the luminous efficiency of the light emitting chip 30. In some embodiments, the reflective layer 40 can be, for example, directly contacting and covering the surrounding sides of the light emitting chip 30, or maintaining a gap distance with the surrounding sides of the light emitting chip 30 that can achieve a certain shielding effect. In some embodiments, the reflective layer 40 can be further made of an insulating material with better heat dissipation properties.

[0048] A surface of the array substrate 10 facing the light emitting chip 30 and the reflective layer 40 is a first surface S1, a surface of the reflective layer 40 away from the array substrate 10 is a second surface S2, and a surface of the light emitting chip 30 away from the array substrate 10 is a third surface S3. To prevent the reflective layer 40 from affecting the front light emission of the display panel 1, the thickness of the reflective layer 40 is less than the thickness of the light emitting chip 30 and greater than half of the thickness of the light emitting chip 30, and the distance between the first surface S1 and the second surface S2 is less than the distance between the first surface S1 and the third surface S3, that is, the horizontal plane where the top surface of the reflective layer 40 is located is lower than the horizontal plane where the top surface of the light emitting chip 30 is located, thereby preventing the reflective layer 40 from covering the top surface of the light emitting chip 30. Specifically, the second surface S2 is located at more than 50% of the height of the light emitting chip 30, and preferably, it is located at 75% of the height of the light emitting chip 30.

[0049] The present invention also provides a method for preparing a display panel 1, which is used to prepare the display panel 1 as described above. The specific process of the preparation method is as follows: Figure 3 As shown, it includes the following steps:

[0050] Step S10) forming a light blocking layer 20 on an array substrate 10: preparing a plurality of thin film transistors and a pixel electrode layer 111 on a base layer by a thin film transistor process to form the array substrate 10. forming a light blocking layer 20 on the array substrate 10 by a photolithography process Figure 4 The light blocking layer 20 is shown.

[0051] Step S20) forming a light emitting chip 30 on the array substrate 10: a plurality of light emitting chips 30 are assembled in order and arrayed together, and the light emitting chips 30 are transferred to the array substrate 10 by mass transfer, so as to form a light emitting chip 30 as shown in FIG. Figure 5 The structure shown.

[0052] Step S30) preparing a mask plate 2 according to the position of the light emitting chip 30: preparing a mask plate, forming a shielding area 201 and a hollow area 202 on the mask plate according to the position of the light emitting chip 30 on the array substrate 10, so as to form the mask plate 2. Figure 6 As shown, the shielding area 201 corresponds to the light-emitting chip 30, and the remaining area of ​​the mask plate 2 except the shielding area 201 is the hollow area 202. The shielding area 201 is a fully sealed structure that cannot penetrate the printed material. The hollow area 202 adopts a mesh structure with a plurality of through holes that can penetrate the printed material. Specifically, the hollow area 202 can be made of a screen made of a metal mesh, a nylon mesh, or the like.

[0053] Step S40) forming a reflective layer 40 on the light-blocking layer 20: aligning the mask plate 2 with the array substrate 10, and making the shielding area 201 in the mask plate 2 correspond to the light-emitting chip 30. Applying an insulating adhesive doped with a reflective material on the light-blocking layer 20 through the mask plate 2. After the coating is completed, the applied insulating adhesive is cured by baking or ultraviolet light irradiation to form the reflective layer 40, and the preparation of the display panel 1 is completed.

[0054] A display panel and a preparation method thereof provided in an embodiment of the present invention prepare a reflective layer on the side of the light-emitting chip, and the reflective layer blocks the scattering of light from the side of the light-emitting chip, so that the light emitted by the light-emitting chip is concentrated and emitted from the top surface of the light-emitting chip, thereby improving the luminous efficiency of the light-emitting chip, and further improving the front display brightness of the display panel. In addition, in the preparation method provided in an embodiment of the present invention, the reflective layer is prepared by screen printing after the light-emitting chip is transferred, the raw materials are easily available and the process is simple, which reduces the production cost and also ensures the transfer yield of the light-emitting chip.

[0055] Although the present invention is described herein with reference to specific embodiments, it should be understood that these embodiments are merely examples of the principles and applications of the present invention. It should therefore be understood that many modifications may be made to the exemplary embodiments and that other arrangements may be devised without departing from the spirit and scope of the present invention as defined by the appended claims. It should be understood that the various dependent claims and features described herein may be combined in a manner different from that described in the original claims. It should also be understood that features described in conjunction with individual embodiments may be used in other described embodiments.

Claims

1. A display panel, characterized in that: include: An array substrate; A plurality of light-emitting chips are arrayed on the array substrate; A reflective layer, disposed on the array substrate and surrounding the side of the light-emitting chip; A light blocking layer, provided between the light emitting chip and the array substrate; Wherein, the array substrate comprises a pixel electrode layer, and the light blocking layer is provided with a plurality of openings, and the openings correspond to the pixel electrode layer.

2. The display panel according to claim 1, wherein: The light blocking layer covers a surface of the array substrate facing the light emitting chip; The light emitting chip is arranged in the opening and is electrically connected to the pixel electrode layer in the opening.

3. The display panel according to claim 2, wherein: The material of the light blocking layer includes a photoresist material with light shielding property.

4. The display panel according to claim 1, wherein: The reflective layer is arranged on a surface of the light blocking layer away from the array substrate and surrounds the side surface of the light emitting chip.

5. The display panel according to claim 1, wherein: The material used for the reflective layer is insulating material.

6. The display panel according to claim 1, wherein: The thickness of the reflective layer is smaller than the thickness of the light emitting chip.

7. The display panel according to claim 1, wherein: The horizontal plane where the top surface of the reflective layer is located is lower than the horizontal plane where the top surface of the light-emitting chip is located.

8. The display panel according to claim 7, wherein: The horizontal plane where the top surface of the reflective layer is located is at 75% of the light emitting chip.

9. The display panel according to claim 1, wherein: The array substrate is provided with a thin film transistor, and the pixel electrode layer is electrically connected to the thin film transistor.

10. A method for preparing a display panel, characterized in that: A display panel as claimed in any one of claims 1 to 9 is prepared, wherein the method for preparing the display panel comprises the following steps: forming a light-emitting chip on an array substrate; forming a light blocking layer on the array substrate; Providing a mask plate, wherein the mask plate comprises a shielding area and a hollow area; A reflective layer surrounding the light emitting chip is formed on the array substrate through the mask plate, the shielding area of ​​the mask plate corresponds to the light emitting chip, and the hollow area corresponds to the reflective layer.

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