Display panel and preparation method thereof

Abstract

The application provides a display panel and a preparation method thereof. The display panel comprises an array substrate, a light emitting chip and a light reflecting layer. The light emitting chip is arranged on the array substrate. The light reflecting layer is arranged on the array substrate and surrounds the light emitting chip. The light reflecting layer collects light emitted from the side of the light emitting chip and emits the light from the top surface of the light emitting chip, thereby improving the light emitting efficiency of the light emitting chip and the front display brightness of the display panel.

Description

Technical Field

[0001] This invention relates to the field of display devices, and in particular to a display panel and its manufacturing method. Background Technology

[0002] With the iterative development of display technology, the traditional LCD industry is facing severe challenges. Currently, many companies are investing in the development of cutting-edge display technologies such as AMOLED (Active-Matrix Organic Light-Emitting Diode) and Micro-LED (Micro Light Emitting Diode). Among these, Micro-LED technology, with its advantages of high contrast, high brightness, long lifespan, and low cost, is considered the ultimate display technology. Micro-LED is essentially an integrated point light source, exhibiting obvious point light source characteristics when emitting light. Its side-emitting nature means that most of the light is not effectively utilized, requiring a solution to address this issue.

[0003] Fabricating the side light-blocking layer during the array substrate manufacturing process is costly and increases the complexity of the process, affecting the array substrate yield. Furthermore, as one of the most crucial steps in Micro-LED display technology, the light-blocking film layer in the array substrate manufacturing process significantly impacts the transfer yield. Summary of the Invention

[0004] The purpose of this invention is to provide a display panel and its manufacturing method to solve the technical problems in the prior art, such as the fact that most of the light emitted by Micro-LED side emission is not effectively utilized, and the high cost and complex process of manufacturing the side light-blocking layer.

[0005] To achieve the above objectives, the present invention provides a display panel comprising an array substrate, a light-emitting chip, and a reflective layer. The light-emitting chip is disposed on the array substrate. The reflective layer is disposed on the array substrate and surrounds the side of the light-emitting chip.

[0006] Furthermore, the display panel also includes a light-blocking layer disposed between the light-emitting chip and the array substrate.

[0007] Furthermore, the light-blocking layer covers one surface of the array substrate facing the light-emitting chip. The light-emitting chip is disposed on the light-blocking layer and is electrically connected to the array substrate.

[0008] Furthermore, the reflective layer is made of an insulating material.

[0009] Furthermore, the thickness of the reflective layer is less than the thickness of the light-emitting chip.

[0010] Furthermore, the horizontal plane where the top surface of the reflective layer is located is lower than the horizontal plane where the top surface of the light-emitting chip is located.

[0011] Furthermore, the array substrate is provided with thin-film transistors, and the light-emitting chip is electrically connected to the thin-film transistors.

[0012] This invention also provides a method for fabricating a display panel, the method comprising the following steps: forming a light-emitting chip on an array substrate; providing a mask, the mask comprising a blocking area and a cutout area; and forming a reflective layer surrounding the light-emitting chip on the array substrate through the mask, wherein the blocking area of ​​the mask corresponds to the light-emitting chip, and the cutout area corresponds to the reflective layer.

[0013] Furthermore, before forming the light-emitting chip on the array substrate, a light-blocking layer is formed on the array substrate.

[0014] Furthermore, the photomask has a shielding area and a cutout area surrounding the shielding area, the shielding area corresponding to the light-emitting chip, and the cutout area corresponding to the reflective layer.

[0015] The advantages of this invention are: the display panel and its manufacturing method provided in this invention prepare a reflective layer on the side of the light-emitting chip to prevent side light emission, thus concentrating the light emitted by the light-emitting chip to be emitted from the top surface of the chip, thereby improving the front display brightness of the display panel. Furthermore, the manufacturing process of the display panel is simple, the materials are readily available, reducing production costs, and it does not affect the transfer yield of the light-emitting chip. Attached Figure Description

[0016] To more clearly illustrate the technical solutions in the embodiments of the present invention, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0017] Figure 1 This is a schematic diagram of the layered structure of the display panel in an embodiment of the present invention;

[0018] Figure 2 for Figure 1 Enlarged schematic diagram of the layered structure of the display panel in dashed box A;

[0019] Figure 3 This is a schematic flowchart of the display panel manufacturing method in an embodiment of the present invention;

[0020] Figure 4This is a schematic diagram of the layered structure of the display panel after step S10 in an embodiment of the present invention;

[0021] Figure 5 This is a schematic diagram of the layered structure of the display panel after step S20 in an embodiment of the present invention;

[0022] Figure 6 This is a planar schematic diagram of the mask plate in an embodiment of the present invention.

[0023] The components in the diagram are shown below:

[0024] Display panel 1; Array substrate 10;

[0025] Substrate 101; Light-shielding layer 102;

[0026] Buffer layer 103; Active layer 104;

[0027] Gate insulating layer 105; Gate layer 106;

[0028] Dielectric layer 107; Source / drain layer 108;

[0029] Passivation layer 109; Planarization layer 110;

[0030] Pixel electrode layer 111; light-blocking layer 20;

[0031] 30 light-emitting chips; 40 reflective layer;

[0032] Mask plate 2; Masking area 201;

[0033] Hollowed-out area 202; First surface S1;

[0034] Second surface S2; Third surface S3. Detailed Implementation

[0035] The following description, with reference to the accompanying drawings, illustrates preferred embodiments of the present invention, demonstrating its implementability. These embodiments provide a complete overview of the invention for those skilled in the art, making its technical content clearer and easier to understand. The present invention can be embodied in many different forms of embodiments, and the scope of protection of the present invention is not limited to the embodiments mentioned herein.

[0036] In the accompanying drawings, components with the same structure are indicated by the same numerical designation, and components with similar structures or functions are indicated by similar numerical designations. The dimensions and thicknesses of each component shown in the drawings are arbitrary, and the present invention does not limit the dimensions and thicknesses of each component. To make the illustrations clearer, the thickness of components is appropriately exaggerated in some places in the drawings.

[0037] Furthermore, the following descriptions of the embodiments of the invention are made with reference to the accompanying illustrations, illustrating specific embodiments in which the invention can be implemented. Directional terms used in this invention, such as "upper," "lower," "front," "rear," "left," "right," "inner," "outer," and "side," are merely directional references to the accompanying drawings. Therefore, the use of directional terms is for better and clearer explanation and understanding of the invention, and does not indicate or imply that the referred device or element must have a specific orientation, or be constructed and operated in a specific orientation; therefore, they should not be construed as limitations on the invention. Furthermore, the terms "first," "second," and "third," etc., are used for descriptive purposes only and should not be construed as indicating or implying relative importance.

[0038] When a component is described as being "on" another component, the component may be placed directly on the other component; alternatively, an intermediate component may exist on which the component is placed, and the intermediate component is placed on the other component. When a component is described as being "installed to" or "connected to" another component, both can be understood as being directly "installed" or "connected" to, or indirectly "installed to" or "connected to" another component via an intermediate component.

[0039] This invention provides a display device, which includes a display panel 1. The display panel 1 provides a display image for the display device. The display device can be any electronic product or component with display functionality. Figures 1-2 As shown, the display panel 1 includes an array substrate 10, a light-blocking layer 20, a light-emitting chip 30, and a reflective layer 40.

[0040] The array substrate 10 includes a plurality of thin-film transistors and a base layer, with the thin-film transistor array arranged on the base layer. Each thin-film transistor includes a conductive structure and an insulating structure. The conductive structure includes an active layer 104, a gate layer 106, and a source / drain layer 108. The insulating structure includes a gate insulating layer 105, a dielectric layer 107, a passivation layer 109, a planarization layer 110, etc.

[0041] The active layer 104 is disposed on the base layer, the gate insulating layer 105 is disposed on the active layer 104, and the gate layer 106 is disposed on the gate insulating layer 105. The dielectric layer 107 is disposed on the base layer and covers the active layer 104, the gate insulating layer 105, and the gate layer 106. The source-drain layer 108 is disposed on the dielectric layer 107 and passes through the dielectric layer 107 to be electrically connected to the active layer 104. The passivation layer 109 is disposed on the dielectric layer 107 and covers the source-drain layer 108. The planarization layer 110 is disposed on the passivation layer 109.

[0042] The base layer includes a substrate layer 101, a light-shielding layer 102, and a buffer layer 103. The light-shielding layer 102 is disposed on the substrate layer 101 and is correspondingly disposed with respect to the active layer 104. The buffer layer 103 is disposed on the substrate layer 101 and covers the light-shielding layer 102. The active layer 104 is disposed on a surface of the buffer layer 103 away from the light-shielding layer 102.

[0043] The light-shielding layer 102 is generally made of an opaque metallic material and is used to shield the active layer 104 from light, preventing light from affecting the operation of the active layer 104. The buffer layer 103 and the insulating structure layer are generally made of inorganic materials such as silicon oxide and silicon nitride. The buffer layer 103 and the insulating structure layer are used to insulate and protect the conductive traces in the thin-film transistor, preventing short circuits between traces. The planarization layer 110 is also used to planarize the surface of the thin-film transistor.

[0044] The array substrate 10 also has a pixel electrode layer 111, which is disposed on the planarization layer 110 and electrically connected to the source and drain layer 108 through the planarization layer 110 and the passivation layer 109.

[0045] The light-blocking layer 20 is disposed on the planarization layer 110 of the array substrate 10 and covers the exposed surface of the planarization layer 110. The light-blocking layer 20 is made of a photoresist material with light-shielding properties. The light-blocking layer 20 can prevent light emitted by the light-emitting chip 30 from leaking out from the array substrate 10 side. The light-blocking layer 20 has a plurality of openings, which correspond to the pixel electrode layer 111, exposing a surface of the pixel electrode layer 111 away from the planarization layer 110.

[0046] The light-emitting chip 30 is disposed in the opening and electrically connected to the pixel electrode layer 111 in the opening. The light-emitting chip 30 is electrically connected to the thin-film transistors in the array substrate 10 through the pixel electrode layer 111, thereby obtaining electrical energy and achieving self-illumination. The light-emitting chip 30 can be one of the following: a mini-LED, a micro-LED, or a similar self-illuminating chip 30. The light-emitting chip 30 can emit any one of white, red, blue, or green light. When all the light-emitting chips 30 in the display panel 1 emit the same color, a color filter can be used to filter and convert the light color, thereby achieving color display. When the light-emitting chips 30 in the display panel 1 emit different colors of light, color display can be achieved directly.

[0047] The reflective layer 40 is disposed on a surface of the light-blocking layer 20 away from the array substrate 10 and surrounds the side surface of the light-emitting chip 30. The reflective layer 40 is made of a reflective insulating material, such as polyester or resin materials doped with reflective materials. The reflective layer 40 prevents light from emanating from the side surface of the light-emitting chip 30, focusing the light and directing it out from the top surface of the light-emitting chip 30, thereby reducing light waste and improving the luminous efficiency of the light-emitting chip 30. In some embodiments, the reflective layer 40 may, for example, directly contact and cover the four sides of the light-emitting chip 30, or maintain a gap distance from the four sides of the light-emitting chip 30 that achieves a certain blocking effect. In some embodiments, the reflective layer 40 may be further made of an insulating material with better heat dissipation properties.

[0048] The surface of the array substrate 10 facing the light-emitting chip 30 and the reflective layer 40 is designated as a first surface S1, the surface of the reflective layer 40 away from the array substrate 10 is designated as a second surface S2, and the surface of the light-emitting chip 30 away from the array substrate 10 is designated as a third surface S3. To prevent the reflective layer 40 from affecting the front light emission of the display panel 1, the thickness of the reflective layer 40 is less than the thickness of the light-emitting chip 30 but greater than half the thickness of the light-emitting chip 30. Furthermore, the distance between the first surface S1 and the second surface S2 is less than the distance between the first surface S1 and the third surface S3; that is, the horizontal plane containing the top surface of the reflective layer 40 is lower than the horizontal plane containing the top surface of the light-emitting chip 30, thereby preventing the reflective layer 40 from obscuring the top surface of the light-emitting chip 30. Specifically, the second surface S2 is located at or above 50% of the height of the light-emitting chip 30, preferably at 75% of the height of the light-emitting chip 30.

[0049] This invention also provides a method for manufacturing a display panel 1, used to manufacture the display panel 1 as described above. The specific process of the manufacturing method is as follows: Figure 3 As shown, it includes the following steps:

[0050] Step S10) Forming a light-blocking layer 20 on an array substrate 10: A plurality of thin-film transistors and a pixel electrode layer 111 are fabricated on a substrate using a thin-film transistor process to form the array substrate 10. A light-blocking layer 20 is formed on the array substrate 10 using a photolithography process. Figure 4 The light-blocking layer 20 shown.

[0051] Step S20) Forming a light-emitting chip 30 on the array substrate 10: A plurality of light-emitting chips 30 are sequentially assembled and arrayed together, and the light-emitting chips 30 are transferred onto the array substrate 10 by mass transfer, forming a light-emitting chip 30 as shown in the figure. Figure 5 The structure shown.

[0052] Step S30) Fabricating a mask 2 according to the position of the light-emitting chip 30: Prepare a mask material, and form a blocking area 201 and a cutout area 202 on the mask material according to the position of the light-emitting chip 30 on the array substrate 10, thus forming the mask 2. Wherein, as... Figure 6 As shown, the shielding area 201 corresponds to the light-emitting chip 30, and the remaining area of ​​the mask plate 2 excluding the shielding area 201 is the hollow area 202. The shielding area 201 is a completely sealed structure, preventing printing material from penetrating. The hollow area 202 adopts a mesh structure with several through holes, allowing printing material to permeate. Specifically, the hollow area 202 can be made of wire mesh made of materials such as metal mesh or nylon mesh.

[0053] Step S40) Forming a reflective layer 40 on the light-blocking layer 20: The mask 2 and the array substrate 10 are aligned, with the blocking area 201 in the mask 2 corresponding to the light-emitting chip 30. An insulating adhesive material doped with reflective material is applied to the light-blocking layer 20 through the mask 2. After application, the applied insulating adhesive material is cured by baking or ultraviolet light irradiation to form the reflective layer 40, completing the fabrication of the display panel 1.

[0054] The present invention provides a display panel and its manufacturing method, wherein a reflective layer is prepared on the side of a light-emitting chip. This reflective layer blocks light scattering from the side of the light-emitting chip, concentrating the light emitted by the chip to be emitted from its top surface, thereby improving the luminous efficiency of the chip and consequently increasing the front display brightness of the display panel. Furthermore, the manufacturing method provided in this invention involves preparing the reflective layer via screen printing after the light-emitting chip has been transferred. This method utilizes readily available raw materials and a simple process, reducing production costs and ensuring a high yield rate for the transferred light-emitting chip.

[0055] While the invention has been described herein with reference to specific embodiments, it should be understood that these embodiments are merely examples of the principles and applications of the invention. Therefore, it should be understood that many modifications can be made to the exemplary embodiments, and other arrangements can be designed without departing from the spirit and scope of the invention as defined by the appended claims. It should be understood that different dependent claims and features described herein can be combined in ways different from those described in the original claims. It is also understood that features described in conjunction with individual embodiments can be used in other described embodiments.

Claims

1. A display panel, characterized in that, include: Array substrate; Multiple light-emitting chips are arrayed on the array substrate; A reflective layer is disposed on the array substrate and surrounds the side of the light-emitting chip; A light-blocking layer is disposed between the light-emitting chip and the array substrate; The array substrate includes a pixel electrode layer, and the light-blocking layer has a plurality of openings, the openings corresponding to the pixel electrode layer; The light-blocking layer covers one surface of the array substrate facing the light-emitting chip; the light-emitting chip is disposed in the opening and is electrically connected to the pixel electrode layer in the opening; The material of the light-blocking layer includes a light-shielding photoresist material; the reflective layer is disposed on a surface of the light-blocking layer away from the array substrate and surrounds the side of the light-emitting chip.

2. The display panel as described in claim 1, characterized in that, The reflective layer is made of insulating material.

3. The display panel as described in claim 1, characterized in that, The thickness of the reflective layer is less than the thickness of the light-emitting chip.

4. The display panel as described in claim 1, characterized in that, The horizontal plane where the top surface of the reflective layer is located is lower than the horizontal plane where the top surface of the light-emitting chip is located.

5. The display panel as described in claim 4, characterized in that, The horizontal plane containing the top surface of the reflective layer is located at 75% of the height of the light-emitting chip.

6. The display panel as described in claim 1, characterized in that, The array substrate is provided with thin-film transistors, and the pixel electrode layer is electrically connected to the thin-film transistors.

7. A method for manufacturing a display panel, characterized in that, The method for preparing the display panel as described in any one of claims 1 to 6 includes the following steps: A light-emitting chip is formed on an array substrate; A light-blocking layer is formed on the array substrate; A photomask is provided, the photomask including a blocking area and a cutout area; A reflective layer surrounding the light-emitting chip is formed on the array substrate by means of the mask, wherein the masking area corresponds to the light-emitting chip and the cutout area corresponds to the reflective layer.

Images