Deposition device

Abstract

This disclosure provides a deposition apparatus. The deposition apparatus includes: a first cover plate, a second cover plate, and a side plate, the first and second cover plates being disposed opposite each other, and the side plate being disposed between the first and second cover plates, the first cover plate, the second cover plate, and the side plate together forming a reaction chamber; an electromagnetic assembly, the electromagnetic assembly including: at least one first electromagnet, the first electromagnet extending along a pointing direction from the first cover plate to the second cover plate, the first electromagnet being disposed outside the reaction chamber and on one side of the side plate in any direction perpendicular to the pointing direction; and a first controller, the first controller being connected to the first electromagnet and used to independently control the energization and de-energization of the first electromagnet, and to independently control the current of the first electromagnet.

Description

Technical Field

[0001] This disclosure relates to the field of semiconductor technology, including but not limited to a deposition apparatus. Background Technology

[0002] In semiconductor fabrication processes, physical vapor deposition (PVD) is often used to prepare various films. PVD processes include magnetron sputtering, which works by ionizing gas molecules in a high vacuum environment using an electric field to generate a plasma containing positive ions and electrons. The positive ions fly towards and bombard the target material under the influence of the electric field, causing the target particles to continuously deposit on the substrate to form a film.

[0003] However, the uniformity and pore-filling ability of the films prepared by the PVD process are currently insufficient to meet the application requirements, and there is an urgent need to improve the deposition equipment. Summary of the Invention

[0004] In view of this, embodiments of the present disclosure provide a deposition apparatus.

[0005] This disclosure provides a deposition apparatus, comprising: a first cover plate, a second cover plate, and a side plate, wherein the first cover plate and the second cover plate are disposed opposite to each other, and the side plate is disposed between the first cover plate and the second cover plate, the first cover plate, the second cover plate, and the side plate together forming a reaction chamber; an electromagnetic assembly, comprising: at least one first electromagnet, the first electromagnet extending along a pointing direction from the first cover plate to the second cover plate, the first electromagnet being disposed outside the reaction chamber and on one side of the side plate in any direction perpendicular to the pointing direction; and a first controller, the first controller being connected to the first electromagnet and used to independently control the energization and de-energization of the first electromagnet, and to independently control the current of the first electromagnet.

[0006] In some embodiments, the electromagnetic component further includes: at least one connecting shaft, the connecting shaft having a first end and a second end opposite each other in an axial direction, the first end of the connecting shaft being connected to the first electromagnet; at least one second controller, the second controller being connected to the second end of the connecting shaft, the second controller adjusting the distance between the first electromagnet and the reaction chamber via the connecting shaft.

[0007] In some embodiments, the first electromagnet includes a plurality of sub-electromagnets, the sub-electromagnets extending along the pointing direction, and the plurality of sub-electromagnets in the same first electromagnet being interconnected.

[0008] In some embodiments, the connecting shaft includes: a plurality of sub-connecting shafts, the sub-connecting shafts being connected to the sub-electromagnets, and the plurality of sub-connecting shafts corresponding to the plurality of sub-electromagnets in the same first electromagnet being connected to the same second controller; the second controller adjusts the distance between the sub-electromagnets and the reaction chamber through the sub-connecting shafts.

[0009] In some embodiments, the first electromagnet includes: a wire extending in the pointing direction, with its two opposite ends connected to a power source.

[0010] In some embodiments, the first electromagnet includes: an iron core extending in the pointing direction; and a coil wound around the outside of the iron core, with both ends of the coil connected to a power source.

[0011] In some embodiments, the electromagnetic component includes a plurality of first electromagnets arranged circumferentially along the reaction chamber.

[0012] In some embodiments, the deposition apparatus further includes at least one second electromagnet, the second electromagnet being disposed outside the reaction chamber, the second electromagnet being a ring magnet and surrounding the outside of the side plate.

[0013] In some embodiments, the deposition apparatus further includes at least one third electromagnet, the third electromagnet being disposed outside the reaction chamber and on one side of the first cover plate along the pointing direction.

[0014] In some embodiments, the deposition apparatus further includes: a target material disposed in the reaction chamber and connected to the first cover plate; and a base disposed in the reaction chamber and used to support a substrate, wherein the base and the target material are disposed opposite to each other along the pointing direction.

[0015] This disclosure provides a deposition apparatus. The deposition apparatus includes: a first cover plate, a second cover plate, and a side plate. The first and second cover plates are disposed opposite each other, and the side plate is located between the first and second cover plates. The first cover plate, second cover plate, and side plate together form a reaction chamber. An electromagnetic assembly includes: at least one first electromagnet extending along a direction pointing from the first cover plate to the second cover plate, located outside the reaction chamber, and positioned on one side of the side plate in any direction perpendicular to the pointing direction; and a first controller connected to the first electromagnet, used to independently control the energization and de-energization of the first electromagnet, and to independently control the current of the first electromagnet. In this disclosure, at least one first electromagnet is positioned on one side of the side plate in any direction perpendicular to the pointing direction. The first controller independently controls the energization and de-energization of each first electromagnet, and independently controls the current of each first electromagnet. This allows for independent control of the influence of the magnetic fields generated by different first electromagnets on different regions within the reaction chamber, achieving differentiated adjustment of different regions, thereby improving the uniformity and pore-filling ability of the film layer prepared using this deposition apparatus. Attached Figure Description

[0016] Figure 1 Cross-sectional views of deposition apparatuses provided for some examples;

[0017] Figure 2 A cross-sectional view of a deposition apparatus provided in an embodiment of this disclosure;

[0018] Figure 3 A partial cross-sectional view of an electromagnetic component provided in some embodiments of this disclosure;

[0019] Figure 4 A partial top view of a first electromagnet provided for some embodiments of this disclosure;

[0020] Figure 5 A schematic diagram of the magnetic field direction of a first electromagnet provided for some embodiments of this disclosure;

[0021] Figure 6 Figure (a) is a partial top view of a second electromagnet provided in some embodiments of this disclosure. Figure 6 Figure (b) is a schematic diagram of the magnetic field of a second electromagnet provided in some embodiments of this disclosure. Detailed Implementation

[0022] The technical solutions of the embodiments of this disclosure will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this disclosure, and not all of them. Based on the embodiments in this disclosure, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this disclosure.

[0023] In the following description, numerous specific details are set forth in order to provide a more thorough understanding of this disclosure. However, it will be apparent to those skilled in the art that this disclosure may be practiced without one or more of these details. In other instances, to avoid confusion with this disclosure, certain technical features well-known in the art have not been described; that is, not all features of actual embodiments are described herein, nor are well-known functions and structures described in detail.

[0024] In the accompanying drawings, for clarity, the dimensions of layers, areas, and elements, as well as their relative dimensions, may be exaggerated. The same reference numerals denote the same elements throughout.

[0025] It should be understood that when an element or layer is referred to as "on," "adjacent to," "connected to," or "coupled to" other elements or layers, it may be directly on, adjacent to, connected to, or coupled to other elements or layers, or there may be intervening elements or layers. Conversely, when an element is referred to as "directly on," "directly adjacent to," "directly connected to," or "directly coupled to" other elements or layers, there are no intervening elements or layers. It should be understood that although the terms first, second, third, etc., may be used to describe various elements, components, areas, layers, and / or portions, these elements, components, areas, layers, and / or portions should not be limited by these terms. These terms are only used to distinguish one element, component, area, layer, or portion from another element, component, area, layer, or portion. Therefore, without departing from the teachings of this disclosure, the first element, component, area, layer, or portion discussed below may be referred to as a second element, component, area, layer, or portion. And the discussion of a second element, component, area, layer, or portion does not imply that the first element, component, area, layer, or portion necessarily exists in this disclosure.

[0026] Spatial relation terms such as “below,” “under,” “below,” “under,” “above,” “above,” etc., are used herein for convenience of description to describe the relationship between one element or feature shown in the figure and other elements or features. It should be understood that, in addition to the orientation shown in the figure, spatial relation terms are intended to also include different orientations of the device in use and operation. For example, if the device in the figure is flipped, then the element or feature described as “below,” “under,” or “below” other elements or features will be oriented “above” other elements or features. Therefore, the exemplary terms “below” and “under” can include both above and below orientations. The device may be otherwise oriented (rotated 90 degrees or otherwise) and the spatial descriptive terms used herein will be interpreted accordingly.

[0027] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit this disclosure. When used herein, the singular forms “a,” “an,” and “the” are also intended to include the plural forms unless the context clearly indicates otherwise. It should also be understood that the terms “comprise” and / or “comprising,” when used in this specification, identify the presence of the stated features, integers, steps, operations, elements, and / or components, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups. When used herein, the term “and / or” includes any and all combinations of the associated listed items.

[0028] To fully understand this disclosure, detailed steps and structures will be presented in the following description to illustrate the technical solutions of this disclosure. Preferred embodiments of this disclosure are described in detail below; however, other embodiments may also be implemented in addition to these detailed descriptions.

[0029] refer to Figure 1 , Figure 1 Cross-sectional views of deposition apparatuses provided for some examples. For example... Figure 1 As shown, the deposition apparatus 100 may include: a top plate 104, a bottom plate 106, and a side plate 108. The top plate 104 and the bottom plate 106 are arranged opposite to each other, and the side plate 108 is disposed between the top plate 104 and the bottom plate 106. The top plate 104, the bottom plate 106, and the side plate 108 together form a reaction chamber 102. A target material 110 is disposed in the reaction chamber 102 and is connected to the top plate 104. The top plate 104 can be connected to a DC power supply. A base 112 is disposed in the reaction chamber 102 and is used to support the substrate. The target material 110 and the base 112 are arranged opposite to each other, and the base 112 can be connected to an AC power supply.

[0030] To improve the deposition process, one can... Figure 1 The illustrated deposition apparatus has been improved.

[0031] In some embodiments, the deposition distance can be increased, i.e., the distance between the top plate 104 (or the target 110) and the bottom plate 106 (or the base 112) can be increased. For example, the deposition distance can be increased from 190 mm to 240 mm. This can filter out target material with a large incident angle sputtered from the target 110, thereby improving the cavity-filling capability. However, this method of increasing the deposition distance often reduces the deposition rate, resulting in poor uniformity of the prepared film. In other embodiments, an electromagnet can be placed above the top plate 104, and the magnetic field generated by the electromagnet can be used to bind charged particles to increase the plasma density, thereby increasing the deposition rate. However, as the requirements of semiconductor processes become increasingly stringent, the requirements for deposition uniformity and cavity-filling capability are also increasing, and current deposition apparatuses cannot meet these requirements.

[0032] In view of this, embodiments of the present disclosure provide a deposition apparatus.

[0033] refer to Figure 2 , Figure 2 A cross-sectional view of a deposition apparatus provided in an embodiment of this disclosure. Figure 2 As shown, this disclosure provides a deposition apparatus 200, which includes: a first cover plate 204, a second cover plate 206, and a side plate 208. The first cover plate 204 and the second cover plate 206 are disposed opposite to each other, and the side plate 208 is disposed between the first cover plate 204 and the second cover plate 206. The first cover plate 204, the second cover plate 206, and the side plate 208 together form a reaction chamber 202; and an electromagnetic assembly 230, which includes: at least one first electromagnet 214 (e.g., ...). Figure 2 (As shown in the dashed circle), the first electromagnet 214 extends along the direction from the first cover plate 204 to the second cover plate 206. The first electromagnet 214 is located outside the reaction chamber 202 and on the side plate 208 in any direction perpendicular to the direction of ...

[0034] The pointing direction of the first cover plate 204 towards the second cover plate 206 can be defined as the Z-direction, that is, the first cover plate 204 and the second cover plate 206 are arranged opposite each other along the Z-direction. Intersecting X and Y directions are defined in a plane perpendicular to the Z-direction. In some embodiments, any two of the X, Y, and Z directions are perpendicular to each other. The following explanation will use the example of any two of the X, Y, and Z directions being perpendicular to each other.

[0035] Here, the first cover plate 204 and the second cover plate 206 are arranged opposite each other along the Z direction. The first cover plate 204 can be referred to as the top cover plate, and the second cover plate 206 can be referred to as the bottom cover plate. The side plate 208 includes a top and a bottom arranged opposite each other along the Z direction. The top of the side plate 208 can contact the first cover plate 204, and the bottom of the side plate 208 can contact the second cover plate 206. The first cover plate 204, the second cover plate 206, and the side plate 208 can together form a reaction chamber 202, which can be a closed chamber.

[0036] Here, the cross-sectional shape of the reaction chamber 202 along the Z-direction can include a circle, a square, or other shapes, and this disclosure does not impose any particular limitation on the cross-sectional shape of the reaction chamber 202 along the Z-direction. The first cover plate 204, the second cover plate 206, and the side plate 208 can be made of any material known in the art, and this disclosure does not impose any particular limitation in this regard. In some embodiments, when the cross-sectional shape of the reaction chamber 202 along the Z-direction is circular, the first cover plate 204 and the second cover plate 206 can both be circular, and the cross-sectional shape of the side plate 208 along the Z-direction is annular, with the width of the annular shape being the thickness of the side plate 208. In other embodiments, when the cross-sectional shape of the reaction chamber 202 along the Z-direction is square, the first cover plate 204 and the second cover plate 206 can both be square, and the cross-sectional shape of the side plate 208 along the Z-direction is square annular, with the width of the square annular shape being the thickness of the side plate 208.

[0037] In some embodiments, when the cross-sectional shape of the reaction chamber 202 perpendicular to the Z direction is circular, the first electromagnet 214 is disposed on the radial side of the reaction chamber 202. For example, the first electromagnet 214 may be disposed on the X-direction side of the reaction chamber 202, or the first electromagnet 214 may be disposed on the Y-direction side of the reaction chamber 202.

[0038] Here, the first electromagnet 214 extends along the Z-direction and is disposed on one side of the sidewall of the reaction chamber 202 in any direction. This disclosure does not impose a particular limitation on the number of first electromagnets 214 in the deposition apparatus 200; for example, it can be one, two, three, four, five, or more. This disclosure does not impose a particular limitation on the placement of each first electromagnet 214 in the XY plane. In some embodiments, the placement of each first electromagnet 214 in the XY plane can be determined according to the magnetic field requirements of different regions in the reaction chamber 202. In other embodiments, a fixed number of first electromagnets 214 can be disposed on the outer sidewall of the reaction chamber 202. The number of first electromagnets 214 can be selected as a whole or individually, depending on the actual uniformity pattern, to meet the magnetic field requirements of different regions in the reaction chamber 202. The cross-sectional shape of the first electromagnet 214 along the Z-direction includes circular, square, or other shapes; this disclosure does not impose a particular limitation on the cross-sectional shape of the first electromagnet 214 along the Z-direction.

[0039] Here, the first controller 216 can determine whether the first electromagnet 214 generates a magnetic field by controlling the energization and de-energization of the first electromagnet 214; and the first controller 216 can also determine the strength of the magnetic field generated by the first electromagnet 214 by controlling the current of the first electromagnet 214. The first controller 216 can be used to independently control the energization and de-energization of each first electromagnet 214, and independently control the magnitude of the current of the first electromagnet 214. That is, whether different first electromagnets 214 are energized or de-energized is independent of each other. For example, all first electromagnets 214 may be energized, or some first electromagnets 214 may be energized and some may be de-energized, or all first electromagnets may be de-energized. The magnitude of the current of different first electromagnets 214 is also independent of each other. For example, the current of all first electromagnets 214 may be the same, or the current of some first electromagnets 214 may be the same and the current of some first electromagnets 214 may be different, or the current of all first electromagnets 214 may be different.

[0040] In this embodiment, at least one first electromagnet 214 is disposed on one side of the side plate. The first controller 216 independently controls the energization and de-energization of each first electromagnet 214, as well as the current of each first electromagnet 214. This allows for independent control of the influence of the magnetic field generated by different first electromagnets 214 on different regions in the reaction chamber 202, enabling differentiated adjustment of different regions. This improves the uniformity of the film layer prepared using the deposition device 200 and increases the ionization degree of the plasma in the reaction chamber 202, thereby improving the pore-filling ability of the film layer prepared using the deposition device 200.

[0041] In some embodiments, the electromagnetic component 230 further includes: at least one connecting shaft 218 (e.g. Figure 2 (As shown in the dashed box in the middle), the connecting shaft 218 includes a first end and a second end that are opposite each other in the axial direction. The first end of the connecting shaft 218 is connected to the first electromagnet 214. At least one second controller 220 is connected to the second end of the connecting shaft 218. The second controller 220 adjusts the distance between the first electromagnet 214 and the reaction chamber 202 through the connecting shaft 218.

[0042] Here, the axial direction of the connecting shaft 218 can be any direction perpendicular to the Z direction. In some embodiments, when the cross-sectional shape of the reaction chamber 202 perpendicular to the Z direction is circular, the axial direction of the connecting shaft 218 can be along the radial direction of the reaction chamber 202.

[0043] Here, the second controller 220 can determine the influence of the magnetic field strength generated by the first electromagnet 214 on the reaction chamber 202 by controlling the distance between the first electromagnet 214 and the reaction chamber 202. When a certain area in the reaction chamber 202 requires a larger magnetic field strength, the current of the first electromagnet 214 can be increased, thereby increasing the magnetic field strength generated by the first electromagnet 214; or, the distance between the first electromagnet 214 and the reaction chamber 202 can be decreased, thereby increasing the influence of the magnetic field generated by the first electromagnet 214 on the reaction chamber 202. Conversely, when a certain area in the reaction chamber 202 requires a smaller magnetic field strength, the current of the first electromagnet 214 can be decreased, thereby decreasing the magnetic field strength generated by the first electromagnet 214; or, the distance between the first electromagnet 214 and the reaction chamber 202 can be increased, thereby decreasing the influence of the magnetic field generated by the first electromagnet 214 on the reaction chamber 202.

[0044] In this embodiment of the present disclosure, the distance between the first electromagnet 214 and the reaction chamber 202 can be controlled by the second controller 220, thereby adjusting the degree of influence of the magnetic field generated by the first electromagnet 214 on different regions in the reaction chamber 202, realizing differentiated adjustment of different regions, which is beneficial to improving the uniformity and pore-filling ability of the film layer prepared by the deposition device 200.

[0045] In some embodiments, the second controller 220 controls the connecting shaft 218 either pneumatically or electrically. In a pneumatic control method, compressed air or other gas is used as a power source. When the gas is compressed, it can store energy, and when the gas is released, it can convert the energy into power to drive the connecting shaft. In an electric control method, electrical energy is used as a power source, converting electrical energy into mechanical energy.

[0046] refer to Figure 3 , Figure 3 This is a partial cross-sectional view of an electromagnetic component provided in some embodiments of this disclosure. (In conjunction with...) Figure 2 and Figure 3 As shown, in some embodiments, each first electromagnet 214 may include a plurality of sub-electromagnets 222, which extend along the Z direction and are interconnected.

[0047] Figure 2 The diagram shows that the distances between the multiple sub-electromagnets 222 in the same first electromagnet 214 and the reaction chamber 202 are the same, that is, the orthographic projections of the multiple sub-electromagnets 222 in the same first electromagnet 214 on the XY plane coincide. Figure 3The diagram illustrates that the distances between the multiple sub-electromagnets 222 in the same first electromagnet 214 and the reaction chamber 202 are different, that is, the orthographic projections of the multiple sub-electromagnets 222 in the same first electromagnet 214 on the XY plane at least partially overlap.

[0048] In some embodiments, the connecting shaft 218 includes a plurality of sub-connecting shafts 224, which are connected to sub-electromagnets 222. The plurality of sub-connecting shafts 224 corresponding to the plurality of sub-electromagnets 222 in the same first electromagnet 214 are connected to the same second controller 220. The second controller 220 adjusts the distance between the sub-electromagnets 222 and the reaction chamber 202 through the sub-connecting shafts 224.

[0049] Here, for the same first electromagnet 214, the currents of the multiple sub-electromagnets 222 within the first electromagnet 214 are the same. The second controller 220 can be used to independently control the distance between different sub-electromagnets 222 within the same first electromagnet 214 and the reaction chamber 202, determining the degree of influence of the magnetic field strength generated by the sub-electromagnets 222 on the reaction chamber 202. When a region in the reaction chamber 202 requires a larger magnetic field strength, the distance between the sub-electromagnets 222 and the reaction chamber 202 can be reduced, thereby increasing the degree of influence of the magnetic field generated by the sub-electromagnets 222 on the reaction chamber 202. When a region in the reaction chamber 202 requires a smaller magnetic field strength, the distance between the sub-electromagnets 222 and the reaction chamber 202 can be increased, thereby reducing the degree of influence of the magnetic field generated by the sub-electromagnets 222 on the reaction chamber 202.

[0050] Here, the first electromagnet 214 and the second controller 220 are in one-to-one correspondence, that is, the number of first electromagnets 214 can be the same as the number of second controllers 220. In the same first electromagnet 214, the sub-electromagnets 222 and the sub-connecting shafts 224 are in one-to-one correspondence, that is, the number of sub-electromagnets 222 and the number of sub-connecting shafts 224 are the same.

[0051] In some embodiments, the electromagnetic component 230 includes a plurality of first electromagnets 214 arranged circumferentially along the reaction chamber 202. Here, the plurality of first electromagnets 214 may be arranged circumferentially along the outer side of the side plate 208, that is, the first electromagnets 214 surround the outer side of the side plate 208.

[0052] In some embodiments, the plurality of first electromagnets 214 can be arranged uniformly or non-uniformly. Uniform arrangement means that the distance between any two adjacent first electromagnets 214 is the same. It should be noted that, at this time, the setting position of the first electromagnets 214 refers to the initial position of the first electromagnets 214, and the distance between the first electromagnets 214 and the reaction chamber 202 can still be adjusted by the second controller 220 and the connecting shaft 218.

[0053] refer to Figure 4 , Figure 4 A partial top view of a first electromagnet provided for some embodiments of this disclosure. (See attached image.) Figure 4 As shown, the cross-sectional shape of the reaction chamber 202 perpendicular to the Z direction is circular. A three-dimensional coordinate system can be established with the center of the reaction chamber 202 (or the center of the circle) as the origin O. In the coordinate system, the X-axis extends along the X direction, the Y-axis extends along the Y direction, and the Z-axis extends along the Z direction. The X-axis, Y-axis and Z-axis intersect at the origin O. Figure 4 The diagram shows eight evenly arranged first electromagnets 214, which are arranged in a circle to surround the side plate 208.

[0054] It should be noted that the coordinate position of the first electromagnet 214 in the three-dimensional coordinate system can be determined as (x1, y1, z1), and the number of sub-electromagnets 222 included by the first electromagnet 214 can be determined as n, where n is an integer greater than or equal to 1. The coordinate values ​​of each sub-electromagnet 222 along the Z direction are z11, z12, z13, ..., z1n, respectively. Correspondingly, the coordinate position of the first sub-electromagnet 222 is (x1, y1, z11), the coordinate position of the second sub-electromagnet 222 is (x1, y1, z12), ..., and the coordinate position of the nth sub-electromagnet 222 is (x1, y1, z1n). Considering that the first electromagnet 214 extends along the Z direction, for a single first electromagnet 214, the second controller 220 adjusts the horizontal coordinate value x1 and the vertical coordinate value y1 of the first electromagnet 214. The horizontal coordinate value x1 of multiple sub-electromagnets 222 within the same first electromagnet 214 is the same, and the vertical coordinate value y1 of multiple sub-electromagnets 222 is also the same. For a certain region in the reaction chamber 202 corresponding to the first electromagnet 214, the magnetic field change is the same at different height positions along the Z direction.

[0055] Furthermore, the distance between multiple sub-electromagnets 222 within the same first electromagnet 214 and the reaction chamber 202 can be adjusted using the second controller 220. The second controller 220 adjusts the x-coordinate value x1 and the y-coordinate value y1 of each sub-electromagnet 222. The x-coordinate value x1 of multiple sub-electromagnets 222 within the same first electromagnet 214 can be the same or different, and the y-coordinate value y1 of multiple sub-electromagnets 222 can be the same or different. For a certain region within the reaction chamber 202 corresponding to the first electromagnet 214, the magnetic field changes differently at different heights along the Z-direction.

[0056] Since the multiple sub-electromagnets 222 in the same first electromagnet 214 are interconnected, the space for adjusting the position of the sub-electromagnets 222 is smaller. By adjusting the distance between the multiple sub-electromagnets 222 in the same first electromagnet 214 and the reaction chamber 202, differentiated adjustments can be made at different heights along the Z direction for a certain area in the reaction chamber 202, thereby increasing the means of adjustment in the vertical direction (i.e., the Z direction).

[0057] In this article, "electromagnet" refers to a component that generates a magnetic field around itself when energized and whose magnetic field disappears when the power is turned off. Furthermore, the strength of the magnetic field generated by the electromagnet can be adjusted by changing the magnitude of the current.

[0058] In some embodiments, the first electromagnet 214 may include: a wire extending in the Z direction, with its two ends, which are opposite to each other in the extension direction, connected to a power source.

[0059] Here, the conductor extends along the Z-direction. When current flows through the conductor, the direction of the current in the conductor is also in the Z-direction. Ampere's law can be used to determine the direction of the magnetic field generated by the current in the conductor. Hold the current-carrying straight conductor with your right hand, pointing your thumb in the direction of the current; the direction your four fingers point indicates the direction of the magnetic field lines.

[0060] refer to Figure 5 , Figure 5 This is a schematic diagram illustrating the magnetic field direction of a first electromagnet provided in some embodiments of this disclosure. For example... Figure 5 As shown, in some embodiments, the direction of the current in the conductor is the negative direction of the Z direction, that is, the direction perpendicular to the paper and inwards. Therefore, the direction of the magnetic field generated by the current-carrying conductor is clockwise.

[0061] In other embodiments, the direction of the current in the conductor is the positive direction of the Z direction, that is, the direction perpendicular to the paper and outwards. Then the direction of the magnetic field generated by the current-carrying conductor is counterclockwise.

[0062] In some embodiments, the first electromagnet 214 includes: an iron core extending in the Z direction; and a coil wound around the outside of the iron core, with both ends of the coil connected to a power source.

[0063] Here, the iron core extends along the Z-direction, and a coil is wound around the outside of the iron core. The coil can be wound clockwise or counterclockwise around the outside of the iron core. Ampere's rule can be used to determine the direction of the magnetic field generated by the current in the solenoid. Hold the solenoid with your right hand, bending your four fingers in the direction of the current; the end pointed to by your thumb is the N-pole of the solenoid.

[0064] In this embodiment of the disclosure, the first electromagnet 214 may include a wire or a solenoid. The presence or absence of magnetism of the first electromagnet 214 can be controlled by energizing or de-energizing it, and the magnitude of magnetism of the first electromagnet 214 can be controlled by the magnitude of the current.

[0065] refer to Figure 6 As shown in Figure (a), Figure 6 Figure (a) is a partial top view of a second electromagnet provided in some embodiments of this disclosure. (In conjunction with...) Figure 2 and Figure 6 As shown in Figure (a), in some embodiments, the deposition apparatus 200 further includes at least one second electromagnet 226, which is disposed outside the reaction chamber 202. The second electromagnet 226 is a ring magnet and surrounds the side plate 208. The first controller 216 can also be connected to the second electromagnet 226 for independently controlling the energization and de-energization of the second electromagnet 226, and for independently controlling the current of the second electromagnet 226.

[0066] refer to Figure 6 As shown in Figure (b), Figure 6 Figure (b) is a schematic diagram of the magnetic field of a second electromagnet provided in some embodiments of this disclosure. Figure 6 As shown in Figure (b), the second electromagnet 226 can be a ring magnet. The magnetic field generated by the energized second electromagnet 226 has the same effect on all regions in the reaction chamber 202 that are equidistant from the second electromagnet 226. For example, Figure 4 The diagram illustrates that the cross-sectional shape of the reaction chamber 202 along the direction perpendicular to Z is circular, and the second electromagnet 226 is annular. Points equidistant from point O in the reaction chamber are affected to the same degree by the magnetic field generated by the second electromagnet 226.

[0067] In some embodiments, the number of second electromagnets 226 can be one or more, and the multiple second electromagnets 226 can be arranged at intervals along the Z direction. For example... Figure 2 Two second electromagnets 226 are illustrated as an example.

[0068] In some embodiments, the first electromagnet 214 may be disposed between the reaction chamber 202 and the second electromagnet 226; and / or, the second electromagnet 226 may be disposed between the reaction chamber 202 and the first electromagnet 214. By disposing the first electromagnet 214 on either side of the side plate 208, differentiated adjustments can be made to different areas in the reaction chamber 202.

[0069] In some embodiments, the deposition apparatus 200 further includes at least one third electromagnet 228, which is located outside the reaction chamber 202 and on one side of the first cover plate 204 along the Z direction. The first controller 216 may also be connected to the third electromagnet 228 for independently controlling the energization and de-energization of the third electromagnet 228, and for independently controlling the current of the third electromagnet 228.

[0070] This disclosure does not impose a particular limitation on the number of third electromagnets 228 in the deposition apparatus; for example, there may be one, two, three, four, five, or more. This disclosure also does not impose a particular limitation on the arrangement position of each third electromagnet 228 in the XY plane; the third electromagnets 228 may be arranged in a circle, or they may be arranged in an array along the X and Y directions. The cross-sectional shape of the third electromagnet 228 along the Z-direction may be circular, square, or other shapes, and this disclosure does not impose a particular limitation on the cross-sectional shape of the third electromagnet 228 along the Z-direction.

[0071] In some embodiments, the deposition apparatus 200 further includes at least one fourth electromagnet disposed in the base 212. The first controller 216 may also be connected to the fourth electromagnet for independently controlling the energization and de-energization of the fourth electromagnet, and for controlling the current of the fourth electromagnet.

[0072] This disclosure does not impose a particular limitation on the number of fourth electromagnets in the deposition apparatus; for example, it can be one, two, three, four, five, or more. This disclosure also does not impose a particular limitation on the arrangement position of each first electromagnet 214 in the XY plane. The fourth electromagnets can be arranged in a circle, or they can be arranged in an array along the X and Y directions. The cross-sectional shape of the fourth electromagnet along the Z direction can be circular, square, or other shapes, and this disclosure does not impose a particular limitation on the cross-sectional shape of the fourth electromagnet along the Z direction.

[0073] In some embodiments, the deposition apparatus 200 may further include a vacuum pump connected to the reaction chamber 202, used to extract air from the reaction chamber 202 to create a vacuum environment within the reaction chamber 202. Here, during the deposition process, the inert gas needs to be ionized to form a plasma comprising gaseous positive ions and electrons. The inert gas used for ionization may include, but is not limited to, argon (Ar), krypton (Kr), or xenon (Xe).

[0074] like Figure 2As shown, in some embodiments, the deposition apparatus 200 may further include: a target 210 disposed in the reaction chamber 202 and connected to the first cover plate 204; and a base 212 disposed in the reaction chamber 202 and used to support the substrate, wherein the base 212 and the target 210 are disposed opposite to each other in the Z direction.

[0075] Here, the target 210 is connected to the first cover plate 204, and the target 210 is disposed on the side of the first cover plate 204 near the second cover plate 206. The target 210 can be bonded to the first cover plate 204 using any suitable bonding method. The bonding method may include, but is not limited to, diffusion bonding or welding. The target 210 can be formed from any sputterable material known in the art, and the target 210 may include, but is not limited to, aluminum, copper, cobalt, tantalum, platinum, gold, silver, lead, or other alloys.

[0076] It should be noted that magnetron sputtering is a process in which energetic plasma bombards the target 210, causing atoms on the surface of the target 210 to disperse and adhere to the substrate to form a film. In some embodiments, the first cover plate 204 can be electrically connected to a DC power supply, referred to as DC sputtering. In other embodiments, the first cover plate 204 can be electrically connected to a radio frequency current, referred to as radio frequency sputtering.

[0077] Here, the base 212 may include an electrostatic chuck, which can support and fix the substrate by electrostatic adsorption.

[0078] In some embodiments, the deposition apparatus 200 may further include: an RF power matching unit and an AC power supply, wherein the AC power supply can be electrically connected to the electrostatic chuck via the RF power matching unit to provide power to the electrostatic chuck.

[0079] Here, the substrate may include a wafer at any stage of the semiconductor manufacturing process. In some embodiments, the substrate may include: a wafer; a dielectric layer formed on the wafer; and / or, a conductive layer formed on the wafer. This disclosure does not specifically limit the number and type of material layers included in the substrate. In some embodiments, the substrate may include any material used for manufacturing electronic components in an integrated circuit, wherein the electronic components may include, but are not limited to, transistors, diodes, lasers, capacitors, or any other electronic components known in the art.

[0080] In this embodiment, the magnetic field generated by the electromagnet can act on the plasma in the reaction chamber, controlling the plasma's trajectory during deposition. A third electromagnet 228 is disposed on the first cover plate 204. Physically, the distance between the third electromagnet 228 and the target 210 is less than the distance between the third electromagnet 228 and the base 212. The magnetic field generated by the third electromagnet 228 is more focused on the plasma's trajectory during excitation. A fourth electromagnet is disposed in the base 212. Physically, the distance between the fourth electromagnet and the base 212 is less than the distance between the fourth electromagnet and the target 210. The magnetic field generated by the fourth electromagnet is more focused on the plasma's trajectory during deposition. Compared to the third electromagnet 228 acting on the plasma during excitation and the fourth electromagnet acting on the plasma during deposition, the first electromagnet 214, disposed on either side of the side plate 208, acts on the plasma's trajectory during movement in the reaction chamber 202, allowing for better control of the plasma's trajectory.

[0081] In this embodiment, the second electromagnet 226 is disposed around the outside of the side plate 208. The magnetic field generated by the second electromagnet 226 focuses more on the trajectory of the plasma in the reaction chamber 202 during its movement. The second electromagnet 226 is a ring electromagnet, and ring electromagnets have the same effect on different regions in the reaction chamber, making it difficult to achieve differentiated adjustment of different regions. In contrast to the ring electromagnet 226, the first electromagnet 214 extends along the Z-direction and is disposed on any side of the side plate 208. The magnetic field generated by different first electromagnets 214 can be independently controlled to affect different regions in the reaction chamber 202, achieving differentiated adjustment of different regions, thereby improving the uniformity and pore-filling ability of the film layer prepared using this deposition apparatus.

[0082] It should be noted that the first controller 216 and the second controller 220 are distinguished only by their functions. The first controller 216 controls the energization and de-energization of the first electromagnet 214 and the current in the first electromagnet 214. The second controller 220 controls the distance between the first electromagnet 214 and the reaction chamber 202. In some embodiments, both the first controller 216 and the second controller 220 can be implemented by software, hardware, or a combination thereof. The first controller 216 and the second controller 220 can be embedded in the processor of the computer device in hardware form or independent of the processor, or they can be stored in the memory of the computer device in software form, so that the processor can call and execute the operations corresponding to each controller. The above division into first controller and second controller based on different functions is exemplary and only a logical functional division. In actual implementation, there may be other division methods.

[0083] This disclosure also provides a computer device, including a memory and a processor. The memory stores a computer program. When the processor executes the computer program, it can realize the above-mentioned control of the energization and de-energization of each electromagnet, as well as control of the current of each electromagnet. It can also realize the above-mentioned control of the distance between the multiple sub-electromagnets in the first electromagnet and the reaction chamber.

[0084] This disclosure also provides a computer-readable storage medium storing a computer program. When the computer program is executed by a processor, it can control the energization and de-energization of each electromagnet, control the current of each electromagnet, and control the distance between the multiple sub-electromagnets in the first electromagnet and the reaction chamber.

[0085] Some or all of the steps in the above embodiments can be implemented by a computer program instructing related hardware. The computer program can be stored in non-volatile memory, or it can be temporarily stored in volatile memory during use. Non-volatile memory may include read-only memory (ROM) or flash memory, etc., and volatile memory may include random access memory (RAM), such as static random access memory (SRAM) or dynamic random access memory (DRAM).

[0086] This disclosure provides a deposition apparatus. The deposition apparatus includes: a first cover plate, a second cover plate, and a side plate. The first and second cover plates are disposed opposite each other, and the side plate is located between the first and second cover plates. The first cover plate, second cover plate, and side plate together form a reaction chamber. An electromagnetic assembly includes: at least one first electromagnet extending along a direction pointing from the first cover plate to the second cover plate, located outside the reaction chamber, and positioned on one side of the side plate in any direction perpendicular to the pointing direction; and a first controller connected to the first electromagnet, used to independently control the energization and de-energization of the first electromagnet, and to independently control the current of the first electromagnet. In this disclosure, at least one first electromagnet is positioned on one side of the side plate in any direction perpendicular to the pointing direction. The first controller independently controls the energization and de-energization of each first electromagnet, and independently controls the current of each first electromagnet. This allows for independent control of the influence of the magnetic fields generated by different first electromagnets on different regions within the reaction chamber, achieving differentiated adjustment of different regions, thereby improving the uniformity and pore-filling ability of the film layer prepared using this deposition apparatus.

[0087] It should be understood that the phrase "an embodiment" or "one embodiment" throughout the specification means that a specific feature, structure, or characteristic related to the embodiment is included in at least one embodiment of this disclosure. Therefore, "in one embodiment" or "one embodiment" appearing throughout the specification does not necessarily refer to the same embodiment. Furthermore, these specific features, structures, or characteristics can be combined in any suitable manner in one or more embodiments. It should be understood that in the various embodiments of this disclosure, the sequence numbers of the above-described processes do not imply a sequential order of execution; the execution order of each process should be determined by its function and internal logic, and should not constitute any limitation on the implementation process of the embodiments of this disclosure. The sequence numbers of the above-described embodiments are for descriptive purposes only and do not represent the superiority or inferiority of the embodiments.

[0088] The above description is merely a preferred embodiment of this disclosure and does not limit the patent scope of this disclosure. Any equivalent structural transformations made using the contents of this specification and drawings under the inventive concept of this disclosure, or direct / indirect applications in other related technical fields, are included within the patent protection scope of this disclosure.

Claims

1. A physical vapor deposition apparatus for magnetron sputtering, characterized in that, The physical vapor deposition apparatus includes: A first cover plate, a second cover plate, and a side plate are provided. The first cover plate and the second cover plate are arranged opposite to each other, and the side plate is located between the first cover plate and the second cover plate. The first cover plate, the second cover plate, and the side plate together form a reaction chamber. An electromagnetic assembly includes: at least one first electromagnet extending along a pointing direction from the first cover plate to the second cover plate, the first electromagnet being disposed outside the reaction chamber and on one side of the side plate in any direction perpendicular to the pointing direction; the first electromagnet includes: a plurality of sub-electromagnets extending along the pointing direction, the plurality of sub-electromagnets in the same first electromagnet being interconnected, and the orthographic projections of the plurality of sub-electromagnets in the same first electromagnet in the plane perpendicular to the pointing direction at least partially overlapping. A first controller, connected to the first electromagnet, is used to independently control the energization and de-energization of the first electromagnet, and to independently control the current of the first electromagnet. The electromagnetic assembly further includes: at least one connecting shaft, the connecting shaft having a first end and a second end opposite each other in an axial direction, the first end of the connecting shaft being connected to the first electromagnet; at least one second controller, the second controller being connected to the second end of the connecting shaft, the second controller adjusting the distance between the first electromagnet and the reaction chamber via the connecting shaft; the connecting shaft includes: a plurality of sub-connecting shafts, the sub-connecting shafts being connected to the sub-electromagnets, the plurality of sub-connecting shafts corresponding to the plurality of sub-electromagnets in the same first electromagnet being connected to the same second controller; the second controller adjusting the distance between the sub-electromagnets and the reaction chamber via the sub-connecting shafts; At least one second electromagnet is provided outside the reaction chamber. The second electromagnet is a ring magnet and is disposed around the outside of the side plate. The second electromagnet is located between the side plate and the first electromagnet.

2. The physical vapor deposition apparatus for magnetron sputtering according to claim 1, characterized in that, The first electromagnet includes: A wire, which extends in the indicated direction, and whose two opposite ends along the direction of extension are respectively connected to a power source.

3. The physical vapor deposition apparatus for magnetron sputtering according to claim 1, characterized in that, The first electromagnet includes: An iron core, the iron core extending along the pointing direction; A coil, the coil being wound around the outside of the iron core, with both ends of the coil connected to a power source.

4. The physical vapor deposition apparatus for magnetron sputtering according to claim 1, characterized in that, The electromagnetic component includes: A plurality of first electromagnets are arranged circumferentially along the reaction chamber.

5. The physical vapor deposition apparatus for magnetron sputtering according to claim 1, characterized in that, The physical vapor deposition apparatus further includes: At least one third electromagnet is provided outside the reaction chamber and on the side of the first cover plate along the pointing direction.

6. The physical vapor deposition apparatus for magnetron sputtering according to any one of claims 1 to 5, characterized in that, The physical vapor deposition apparatus further includes: The target material is disposed in the reaction chamber and connected to the first cover plate; A base is disposed in the reaction chamber and is used to support the substrate. The base and the target are arranged opposite to each other along the pointing direction.

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