Growth method of nano-diamond film

Abstract

The invention discloses a growth method of a nano-diamond film. Transition layer films such as AlN and SiO2 with the thickness of 20-500 nm are deposited on the surfaces of a monocrystalline silicon piece, a quartz piece and a sapphire piece with the surfaces subjected to polishing treatment through molecular beam epitaxy, metal organic chemical vapor deposition, magnetron sputtering and the like. And putting the substrate deposited with the transition layer film into a nano-diamond nucleation liquid with the diameter of 5-100 nm, and carrying out ultrasonic nucleation for 0.5-24 hours. And then methane and hydrogen are introduced into a microwave plasma chemical vapor deposition device for growth of the nano-diamond film, the growth temperature interval is 700-1100 DEG C until a layer of compact nano-diamond film is formed on the buffer layer, and preparation of the diamond-buffer layer-single crystal substrate heat dissipation structure is achieved. According to the method, the nucleation density of the nano-diamond can be remarkably improved, and the nucleation density of the diamond can be improved from 109 / cm < 2 > to 1012 / cm < 2 >, so that the diamond and the substrate are combined more tightly, the interface thermal resistance is further reduced, and the heat dissipation performance is enhanced.

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