Photoelectric integrated detector

Abstract

The invention provides a photoelectric integrated detector. The photoelectric integrated detector comprises a shell; the passive optical chip assembly is arranged in the shell and comprises a wavelength division demultiplexing chip suitable for decomposing an optical signal input from the outside into optical signals with different wavelengths; the adjustable optical attenuation chip is suitable for performing power modulation on optical signals with different wavelengths; the detector array assembly is arranged in the shell and comprises an array carrier, and the first electrode channel comprises a first part parallel to the plane where the second electrode channel is located and a second part orthogonal to the plane where the second electrode channel is located; the plurality of photoelectric detectors are suitable for respectively converting the modulated optical signals with different wavelengths into electric signals, the photoelectric detectors are arranged on the second part of the first electrode channel, and the direction of the first conductive part of the first electrode channel is changed at the joint part of the first part and the second part; and the circuit board is suitable for being electrically connected with the passive optical chip assembly and the detector array assembly.

Description

Technical Field

[0001] The present disclosure relates to the technical field of optoelectronics integration, and more particularly, to a photoelectric integrated detector. Background Art

[0002] With the development of large-scale array detection systems, traditional discrete integrated single-function devices are large in size and high in power consumption. The connection method through optical fiber coupling will lead to the loss of overall performance and reliability. When placing discrete integrated traditional single-function devices in different use environments, the discrete integration method will also increase the connection damage between devices, increase the maintenance cost and difficulty. For the construction of large-scale array detection systems with rapid capacity expansion and high device reliability requirements, traditional discrete integrated single-function devices obviously cannot meet the requirements. At the same time, since the connection between each single-function device during integration of traditional discrete single-function devices requires wire bonding, the number of wire bonding used in integration is large, which leads to the problem of increased signal transmission loss. Summary of the invention

[0003] In order to solve at least one of the technical problems in the prior art, the present disclosure provides an optical integrated detector, which can reduce the number of wire bonding and simplify the packaging structure.

[0004] The embodiment of the present disclosure provides a photoelectric integrated detector, comprising: a housing; a passive optical chip assembly, arranged in the housing, and comprising a wavelength division multiplexing chip suitable for decomposing an optical signal input from the outside into optical signals of different wavelengths; and an adjustable optical attenuation chip, suitable for power modulation of the optical signals of different wavelengths to balance the power of the optical signals of each wavelength; a detector array assembly, arranged in the housing, and comprising: an array carrier, comprising a first electrode channel and a second electrode channel, the first electrode channel comprising a first portion parallel to the plane where the second electrode channel is located and a second portion orthogonal to the plane where the second electrode channel is located; and a plurality of photoelectric detectors. The photodetector is suitable for converting modulated optical signals with different wavelengths into electrical signals respectively, the photodetector is installed in the second part of the first electrode channel, and the back electrode of the photodetector is electrically connected to the first conductive part arranged in the second part, the front electrode of the photodetector is electrically connected to the second conductive part arranged in the second electrode channel, and the first conductive part changes direction at the junction of the first part and the second part, so that the first conductive part on the first part is parallel to the second conductive part on the second electrode channel; and a circuit board is suitable for being electrically connected to the passive optical chip assembly and the detector array assembly.

[0005] According to some embodiments of the present disclosure, the array carrier is configured in a strip shape, an extension direction of the array carrier is orthogonal to an extension direction of the adjustable light attenuation chip, and the plurality of photodetectors are arranged in an array at intervals on the array carrier.

[0006] According to some embodiments of the present disclosure, the passive optical chip assembly further includes: a thermistor, arranged on the upper side of the wavelength division multiplexing chip, the thermistor being suitable for detecting the real-time operating temperature of the wavelength division multiplexing chip; and a semiconductor refrigerator, arranged on the lower side of the wavelength division multiplexing chip, the semiconductor refrigerator being suitable for controlling the temperature of the wavelength division multiplexing chip and the working environment of the wavelength division multiplexing chip according to the real-time operating temperature, so as to avoid temperature drift of the wavelength of the optical signal output by the wavelength division multiplexing chip.

[0007] According to some embodiments of the present disclosure, a groove is provided on the shell, and the semiconductor cooler is arranged in the groove to reduce the packaging thickness of the photoelectric integrated detector.

[0008] According to some embodiments of the present disclosure, the adjustable optical attenuation chip includes a plurality of control electrodes, and voltage is applied to the control electrodes to perform power modulation on the optical signals of different wavelengths using the thermo-optical effect.

[0009] According to some embodiments of the present disclosure, the above-mentioned photoelectric integrated detector also includes: a first heat sink, which is arranged on the lower side of the above-mentioned adjustable light attenuation chip, and the above-mentioned first heat sink is suitable for transferring the heat generated by the above-mentioned thermo-optical effect to the outside of the above-mentioned shell.

[0010] According to some embodiments of the present disclosure, the detector array assembly further includes: a second heat sink disposed on the lower side of the array carrier, wherein the second heat sink is suitable for transferring heat generated by the photodetector to the outside of the shell.

[0011] According to some embodiments of the present disclosure, the material of the array carrier is an insulating material, the first conductive portion includes a first conductor material plated on the surface of the first electrode channel, and the second conductive portion includes a second conductor material plated on the surface of the second electrode channel and a wire connected between the second conductor material and the front electrode of the photodetector.

[0012] According to some embodiments of the present disclosure, the above-mentioned circuit board includes: a plurality of temperature control pins, which are electrically connected to the above-mentioned thermistor and the above-mentioned semiconductor refrigerator; a plurality of control pins, which are connected to each control electrode in the above-mentioned adjustable optical attenuation chip, and power modulate the above-mentioned optical signals of different wavelengths through an externally applied voltage; a plurality of detector pins, which are respectively connected to the above-mentioned first conductive part and the above-mentioned second conductive part, and the above-mentioned detector pins are suitable for receiving the above-mentioned electrical signals.

[0013] According to some embodiments of the present disclosure, a plurality of fixing posts are further provided on the shell, and the fixing posts are suitable for limiting the position of the circuit board in the shell.

[0014] According to a photoelectric integrated detector provided by the present disclosure, a passive optical chip component, a detector array component and a circuit board are built into a shell, the passive optical chip component includes a wavelength division multiplexing chip and an adjustable optical attenuation chip suitable for decomposing an optical signal input from the outside into optical signals of different wavelengths, the wavelength division multiplexing chip is used to increase the transmission capacity of the photoelectric integrated detector, the adjustable optical attenuation chip is used to power modulate optical signals of different wavelengths to balance the power of optical signals of each wavelength, the detector array component includes an array carrier and a plurality of photodetectors, the array carrier includes a first electrode channel and a second electrode channel, the first electrode channel includes a first part parallel to the plane where the second electrode channel is located and a second part orthogonal to the plane where the second electrode channel is located, and the photodetector is used to The modulated optical signals with different wavelengths are converted into electrical signals. The photodetector is installed in the second part of the first electrode channel, and the back electrode of the photodetector is electrically connected to the first conductive part arranged in the second part, and the front electrode of the photodetector is electrically connected to the second conductive part arranged in the second electrode channel. The first conductive part changes direction at the junction of the first part and the second part, so that the first conductive part located on the first part is parallel to the second conductive part located on the second electrode channel. The circuit board is suitable for being electrically connected to the passive optical chip assembly and the detector array assembly. Compared with the traditional coaxial packaging and three-dimensional packaging, the packaging method of the optoelectronic integrated detector disclosed in the present invention can greatly reduce the number of wire bonding, and by simplifying the packaging structure, miniaturization integration, multi-function and high sensitivity are achieved. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1 is a stereoscopic diagram of a photoelectric integrated detector according to an illustrative embodiment of the present disclosure;

[0016] Figure 2 is a perspective view of a detector array assembly according to an illustrative embodiment of the present disclosure;

[0017] Figure 3 is a stereoscopic diagram of an array carrier according to an illustrative embodiment of the present disclosure;

[0018] Figure 4 is a cross-sectional view of an array carrier and a photodetector combined according to an illustrative embodiment of the present disclosure;

[0019] Figure 5 is a partial stereoscopic diagram of a photoelectric integrated detector according to an exemplary embodiment of the present disclosure;

[0020] Figure 6 is a perspective view of a housing according to an exemplary embodiment of the present disclosure;

[0021] Figure 7 is a top view of a circuit board according to an exemplary embodiment of the present disclosure;

[0022] Figure 8 is a top view of a circuit board installed in a housing according to an exemplary embodiment of the present disclosure; and

[0023] Fig. 9 is a stereoscopic view of a photoelectric integrated detector with a cover on a housing according to an exemplary embodiment of the present disclosure.

[0024] In the drawings, the meanings of the reference numerals are as follows:

[0025] 1. Shell;

[0026] 2. Circuit board;

[0027] 21. Temperature control pin;

[0028] 22. Control pin;

[0029] 23. Detector pin;

[0030] 24. Pin hole;

[0031] 25. Fixing holes;

[0032] 3. Wavelength division multiplexing chip;

[0033] 4. Adjustable light attenuation chip;

[0034] 5. Array carrier;

[0035] 51. a first electrode channel;

[0036] 511, Part I;

[0037] 512, Part II;

[0038] 52. a second electrode channel;

[0039] 6. Photoelectric detector;

[0040] 7. Optical fiber tail tube;

[0041] 8. Fiber optic array;

[0042] 9. Thermistor;

[0043] 10. Semiconductor refrigerator;

[0044] 11. Groove;

[0045] 12. First heat sink;

[0046] 13. Second heat sink;

[0047] 14. Inner pins;

[0048] 15. External pins;

[0049] 16. Fixed column;

[0050] 17. Capping;

[0051] 18. External fixing holes;

[0052] A. Photosensitive surface;

[0053] B. Front electrode. DETAILED DESCRIPTION

[0054] In order to make the objectives, technical solutions and advantages of the present disclosure more clearly understood, the present disclosure is further described in detail below in combination with specific embodiments and with reference to the accompanying drawings.

[0055] The terms used herein are only for describing specific embodiments and are not intended to limit the present disclosure. The terms "comprise", "include", etc. used herein indicate the existence of the features, steps, operations and / or components, but do not exclude the existence or addition of one or more other features, steps, operations or components.

[0056] All terms used herein, including technical and scientific terms, have the meanings commonly understood by those skilled in the art, unless otherwise defined. It should be noted that the terms used herein should be interpreted as having a meaning consistent with the context of this specification, and should not be interpreted in an idealized or overly rigid manner.

[0057] When using expressions such as "at least one of A, B, and C, etc.", it should generally be interpreted as the meaning of the expression generally understood by those skilled in the art. For example, "a system having at least one of A, B, and C" should include but not be limited to a system having A alone, B alone, C alone, A and B, A and C, B and C, and / or A, B, C, etc. When using expressions such as "at least one of A, B, or C, etc.", it should generally be interpreted as the meaning of the expression generally understood by those skilled in the art. For example, "a system having at least one of A, B, or C" should include but not be limited to a system having A alone, B alone, C alone, A and B, A and C, B and C, and / or A, B, C, etc.

[0058] The packaging design of traditional optoelectronic integrated detectors, such as coaxial packaging and three-dimensional packaging, requires the arrangement of a signal output thin film circuit and a bias thin film circuit board, and cannot guarantee the thickness and stability after packaging. According to the concept of one aspect of the present disclosure, the present disclosure places a passive optical chip component, a detector array component and a circuit board inside a housing, wherein the passive optical chip component includes a wavelength division multiplexing chip and an adjustable optical attenuation chip suitable for decomposing an optical signal input from the outside into optical signals of different wavelengths. The wavelength division multiplexing chip is used to increase the transmission capacity of the optoelectronic integrated detector, and the adjustable optical attenuation chip is used to power modulate optical signals of different wavelengths so as to balance the power of optical signals of each wavelength. The detector array component includes an array carrier and multiple photodetectors, and the array carrier includes A first electrode channel and a second electrode channel, the first electrode channel includes a first part parallel to the plane where the second electrode channel is located and a second part orthogonal to the plane where the second electrode channel is located, a photodetector is used to convert a modulated optical signal with different wavelengths into an electrical signal, the photodetector is installed in the second part of the first electrode channel, and the back electrode of the photodetector is electrically connected to the first conductive part arranged in the second part, the front electrode of the photodetector is electrically connected to the second conductive part arranged in the second electrode channel, the first conductive part changes direction at the junction of the first part and the second part, so that the first conductive part located on the first part is parallel to the second conductive part located on the second electrode channel, and the circuit board is suitable for being electrically connected to a passive optical chip assembly and a detector array assembly. Compared with traditional coaxial packaging and three-dimensional packaging, the packaging method of the optoelectronic integrated detector disclosed in the present invention can greatly reduce the number of wire bonding, and by simplifying the packaging structure, miniaturization integration, multi-function and high sensitivity are achieved.

[0059] In order to make the objectives, technical solutions and advantages of the present disclosure more clearly understood, the present disclosure is further described in detail below in combination with specific embodiments and with reference to the accompanying drawings.

[0060] Figure 1 is a stereoscopic diagram of a photoelectric integrated detector according to an illustrative embodiment of the present disclosure.

[0061] According to an embodiment of the present disclosure, a photoelectric integrated detector is provided, such as Figure 1As shown, the optoelectronic integrated detector includes a housing 1, a passive optical chip assembly, a detector array assembly and a circuit board 2. The passive optical chip assembly is arranged in the housing 1, and the passive optical chip assembly includes a wavelength division multiplexing chip 3 and an adjustable optical attenuation chip 4 suitable for decomposing an optical signal input from the outside into optical signals of different wavelengths. The adjustable optical attenuation chip 4 is suitable for power modulation of optical signals of different wavelengths to balance the power of optical signals of each wavelength. The detector array assembly is arranged in the housing 1, and the detector array assembly includes an array carrier 5 and a plurality of photodetectors 6. The array carrier 5 includes a first electrode channel 51 and a second electrode channel 52, and the first electrode channel 51 includes a first portion 511 parallel to the plane where the second electrode channel 52 is located and a second portion 512 orthogonal to the plane where the second electrode channel 52 is located. The plurality of photodetectors 6 are adapted to convert modulated optical signals with different wavelengths into electrical signals respectively. The photodetectors 6 are mounted on the second portion 512 of the first electrode channel 51, and the back electrode of the photodetector 6 is electrically connected to the first conductive portion arranged in the second portion 512, and the front electrode B of the photodetector 6 is electrically connected to the second conductive portion arranged in the second electrode channel 52. The first conductive portion changes direction at the junction of the first portion 511 and the second portion 512, so that the first conductive portion on the first portion 511 is parallel to the second conductive portion on the second electrode channel 52. The circuit board 2 is adapted to be electrically connected to the passive optical chip assembly and the detector array assembly.

[0062] According to an embodiment of the present disclosure, a fiber optic tail tube 7 is provided at a position on the housing 1 for receiving an optical signal input from the outside, and solder is used to seal the fiber optic tail tube 7 and the photoelectric integrated detector as a whole to ensure the waterproof effect and good air tightness of the photoelectric integrated detector.

[0063] According to the embodiment of the present disclosure, the optical signal inputted from the outside enters the optoelectronic integrated detector through the optical fiber array 8, and the optical fiber array 8 can be, for example, a single-channel optical fiber array. The optical fiber array 8 is coupled to the incident waveguide of the wavelength division multiplexing chip 3, and the coupling glue is cured by ultraviolet light, and then cured by ultraviolet light using mechanical glue.

[0064] According to the embodiment of the present disclosure, the array channels of the wavelength division multiplexing chip 3 and the adjustable light attenuation chip 4 are coupled and connected in a one-to-one correspondence, and the coupling glue is cured by ultraviolet light and then cured by ultraviolet light using mechanical glue.

[0065] According to the embodiment of the present disclosure, the wavelength division multiplexing chip 3 decomposes the optical signal from the optical fiber array 8 into optical signals of different wavelengths, so that the optical signals of each wavelength are transmitted respectively through different channels to increase the signal transmission capacity of the optoelectronic integrated detector. Optical signals of different wavelengths enter the corresponding channels of the adjustable optical attenuation chip 4, and the adjustable optical attenuation chip 4 modulates the power of the optical signals of different wavelengths so that the optical signals are adjusted within the range of their maximum output power to -40dBm, thereby achieving the function of controlling the opening or closing state of the channel, and also playing the role of power pre-equalization before the optoelectronic integrated detector converts the optical signal into an electrical signal.

[0066] According to an embodiment of the present disclosure, the adjustable optical attenuation chip 4 includes a plurality of control electrodes, and voltage is applied to the control electrodes to perform power modulation on optical signals of different wavelengths using the thermo-optical effect.

[0067] According to the embodiments of the present disclosure, the thermo-optic effect is a phenomenon in which the optical properties of liquid crystals change with temperature by heating or cooling the liquid crystals to change their molecular arrangement. The thermo-optic effect has the opposite effect on the refractive index of the optical signal as the plasma dispersion effect. The higher the temperature, the greater the refractive index of the optical signal.

[0068] Figure 2 is a perspective view of a detector array assembly according to an illustrative embodiment of the present disclosure.

[0069] According to the embodiments of the present disclosure, Figure 2 As shown, the multiple photodetectors 6 can be selected, for example, single-tube avalanche photodetector chips, which convert modulated optical signals with different wavelengths into electrical signals respectively, and by applying an avalanche working voltage, the single-tube avalanche photodetector chip can amplify the received and photoelectrically converted signal by 10 times. The single-tube avalanche photodetector chips are sequentially mounted on the second part 512 of the first electrode channel 51 on the array carrier 5, so that multiple optical signals are converted into electrical signals at the same time, increasing the signal capacity of the photoelectric integrated detector.

[0070] According to the embodiment of the present disclosure, operational amplifier circuit electronic components, photodetector power supply and signal output control electronic components, adjustable light attenuation chip modulation control electronic components and temperature control electronic components are placed on the circuit board 2. Electronic components are welded on the circuit board 2 to form a single operational amplifier circuit to achieve amplification of the electrical signal after the photodetector 6 converts the optical signal into an electrical signal. The design of the single operational amplifier circuit can amplify the electrical signal by 10,000 times, and cooperate with the single-tube avalanche photodetector chip to amplify it by 10 times after applying the avalanche working voltage. The overall design of the photoelectric integrated detector can amplify the received signal by 100,000 times to achieve the response and detection of weak signals.

[0071] Figure 3 is a stereoscopic diagram of an array carrier 5 according to an exemplary embodiment of the present disclosure, Figure 4 It is a cross-sectional view of a combination of an array carrier 5 and a photodetector 6 according to an illustrative embodiment of the present disclosure.

[0072] According to the embodiments of the present disclosure, Figure 2 and Figure 3 As shown, the first conductive portion of the array carrier 5 changes direction at the junction of the first portion 511 and the second portion 512, and realizes the direction change of the electrical signal through a 90° bend, so that the signal generated by the photosensitive surface A of the vertically mounted single-tube avalanche photodetector chip can be converted to a horizontal direction, that is, the back electrode and the front electrode B are both turned to a plane parallel to the detector pin 23 (described in detail below), as shown in FIG. Figure 4 As shown, it is convenient to transmit the electrical signal to the corresponding detector pin 23 of the circuit board 2 by wire bonding, and the wire is, for example, a gold wire.

[0073] According to the embodiment of the present disclosure, the present disclosure builds a passive optical chip component, a detector array component and a circuit board 2 into a housing 1, wherein the passive optical chip component includes a wavelength division multiplexing chip 3 and an adjustable optical attenuation chip 4 suitable for decomposing an optical signal input from the outside into optical signals of different wavelengths, and the wavelength division multiplexing chip 3 is used to increase the transmission capacity of the optoelectronic integrated detector, and the adjustable optical attenuation chip 4 is used to power modulate optical signals of different wavelengths so that the power of optical signals of each wavelength is balanced, and the detector array component includes an array carrier 5 and a plurality of photodetectors 6, and the array carrier 5 includes a first electrode channel 51 and a second electrode channel 52, and the first electrode channel 51 includes a first portion 511 parallel to the plane where the second electrode channel 52 is located and a second portion 512 orthogonal to the plane where the second electrode channel 52 is located, and the modulated optical signals with different wavelengths are modulated by the photodetector 6. The optical signal of a wavelength is converted into an electrical signal, the photodetector 6 is installed in the second part 512 of the first electrode channel 51, and the back electrode of the photodetector 6 is electrically connected to the first conductive part arranged in the second part 512, the front electrode B of the photodetector 6 is electrically connected to the second conductive part arranged in the second electrode channel 52, the first conductive part changes direction at the junction of the first part 511 and the second part 512, so that the first conductive part located on the first part 511 is parallel to the second conductive part located on the second electrode channel 52, the circuit board 2 is suitable for being electrically connected to the passive optical chip component and the detector array component, and the packaging method of the optoelectronic integrated detector disclosed in the present invention can greatly reduce the number of wire bonding compared with traditional coaxial packaging and three-dimensional packaging, and reduce the transmission loss of the signal by simplifying the packaging structure, thereby realizing miniaturized integration, multi-function and high sensitivity.

[0074] Figure 5is a partial stereoscopic diagram of a photoelectric integrated detector according to an illustrative embodiment of the present disclosure.

[0075] According to the embodiments of the present disclosure, Figure 5 As shown, the array carrier 5 is constructed in a strip shape, the extension direction of the array carrier 5 is orthogonal to the extension direction of the adjustable light attenuation chip 4 , and a plurality of photodetectors 6 are arranged in an array at intervals on the array carrier 5 .

[0076] According to the embodiments of the present disclosure, the center height of the photosensitive surface A of the plurality of photodetectors 6 is greater than the height of the adjustable optical attenuation chip 4, so that the end faces of the output waveguides of the adjustable optical attenuation chip 4 are sequentially opposite to the center of the photosensitive surface A of the photodetector 6, so as to ensure that the output port of the adjustable optical attenuation chip 4 and the photosensitive surface A of the photodetector 6 are coupled to the greatest extent.

[0077] According to the embodiments of the present disclosure, Figure 1 As shown, the passive optical chip assembly further includes a thermistor 9 and a semiconductor refrigerator 10. The thermistor 9 is arranged on the upper side of the wavelength division multiplexing chip 3, and is suitable for detecting the real-time working temperature of the wavelength division multiplexing chip 3. The semiconductor refrigerator 10 is arranged on the lower side of the wavelength division multiplexing chip 3, and is suitable for controlling the temperature of the wavelength division multiplexing chip 3 and the working environment of the wavelength division multiplexing chip 3 according to the real-time working temperature, so as to avoid the wavelength of the optical signal output by the wavelength division multiplexing chip 3 from causing temperature drift.

[0078] According to an embodiment of the present disclosure, the thermistor 9 is fixed to the upper side of the WDM chip 3 using silver paste.

[0079] According to the embodiment of the present disclosure, the thermistor 9 detects the real-time working temperature of the wavelength division multiplexing chip 3 by feedback of its own current size. The semiconductor refrigerator 10 is suitable for controlling the temperature of the wavelength division multiplexing chip 3 and the working environment of the wavelength division multiplexing chip 3 according to the real-time working temperature, so that the temperature of the wavelength division multiplexing chip 3 and the working environment of the wavelength division multiplexing chip 3 is maintained at 25°C, so as to avoid the heat generated by each device during the operation of the photoelectric integrated detector, which causes the central wavelength of the output channel of the wavelength division multiplexing chip 3 to drift in temperature, thereby ensuring the stability of the working performance of the photoelectric integrated detector.

[0080] Figure 6 is a stereoscopic view of a housing 1 according to an exemplary embodiment of the present disclosure.

[0081] According to the embodiments of the present disclosure, Figure 6 As shown, a groove 11 is provided on the housing 1, and the semiconductor cooler 10 is arranged in the groove 11 to reduce the packaging thickness of the photoelectric integrated detector.

[0082] According to the embodiment of the present disclosure, the provision of the groove 11 reduces the packaging thickness of the photoelectric integrated detector and reduces the overall size of the photoelectric integrated detector.

[0083] According to the embodiments of the present disclosure, Figure 1 As shown, the photoelectric integrated detector further includes a first heat sink 12 , which is disposed on the lower side of the adjustable light attenuation chip 4 . The first heat sink 12 is suitable for transferring heat generated by the thermo-optical effect to the outside of the housing 1 .

[0084] According to an embodiment of the present disclosure, the first heat sink 12 is fixed by using gold-tin solder to ensure the stability and reliability of each device of the optoelectronic integrated detector during transportation and use.

[0085] According to the embodiment of the present disclosure, mechanical glue is used to fill between the adjustable light attenuation chip 4 and the first heat sink 12, and after being cured by ultraviolet light, it is placed in an oven for further curing, so that the adjustable light attenuation chip 4 is completely fixed at the optimal coupling position.

[0086] According to the embodiment of the present disclosure, a first heat sink 12 is provided at the lower side of the adjustable optical attenuation chip 4, so that the heat generated by the thermo-optical effect is transmitted to the outside of the housing 1 through the first heat sink 12, and heat is exchanged with the external environment medium, thereby overcoming the problem that the output wavelength of the wavelength division multiplexing chip 3 is affected by heat and produces temperature drift, thereby affecting the performance, and also avoiding the problem that the adjustable optical attenuation chip 4 is affected by the increase of crosstalk between channels due to the temperature increase, thereby affecting the transmission quality of the optical signal, thereby ensuring the stability of the working performance of the optoelectronic integrated detector.

[0087] According to the embodiments of the present disclosure, Figure 2 and Figure 5 As shown, the detector array assembly further includes a second heat sink 13 disposed on the lower side of the array carrier 5 . The second heat sink 13 is suitable for transferring the heat generated by the photodetector 6 to the outside of the housing 1 .

[0088] According to the embodiments of the present disclosure, the height of the second heat sink 13 should be such that the center height of the photosensitive surface A of the photodetector 6 is greater than the sum of the heights of the adjustable light attenuation chip 4 and the first heat sink 12, and the top surface height of the semiconductor refrigerator 10 fixed in the groove 11 should be no greater than the top surface height of the first heat sink 12 after fixation. By using the photodetector 6 and the second heat sink 13, a design scheme of increasing the reserved assembly space along the reverse light path direction can avoid the problem that the output port of the adjustable light attenuation chip 4 cannot be coupled to the photosensitive surface A of the photodetector 6 to the maximum extent due to the height of the second heat sink 13 being higher than the height of the optical path waveguide when the package is fixed.

[0089] According to an embodiment of the present disclosure, the second heat sink 13 is fixed by using gold-tin solder to ensure the stability and reliability of each device of the photoelectric integrated detector during transportation and use.

[0090] According to the embodiment of the present disclosure, the material of the first heat sink 12 and the second heat sink 13 is aluminum nitride ceramic with gold plated on the surface. The heat sink made of aluminum nitride ceramic has high processing accuracy and can effectively ensure the smoothness of the packaging optical path.

[0091] According to an embodiment of the present disclosure, the material of the array carrier 5 is an insulating material, the first conductive part includes a first conductor material plated on the surface of the first electrode channel 51, and the second conductive part includes a second conductor material plated on the surface of the second electrode channel 52 and a wire connected between the second conductor material and the front electrode B of the photodetector 6.

[0092] According to an embodiment of the present disclosure, the material of the array carrier 5 is an insulating material, such as aluminum nitride ceramic, the first conductor material and the second conductor material can be, for example, gold, and the wire connected between the second conductor material and the front electrode B of the photodetector 6 can be, for example, a gold wire.

[0093] Figure 7 is a top view of a circuit board 2 according to an exemplary embodiment of the present disclosure.

[0094] According to the embodiments of the present disclosure, Figure 7 As shown, the circuit board 2 includes a plurality of temperature control pins 21, a plurality of control pins 22 and a plurality of detector pins 23. The plurality of temperature control pins 21 are electrically connected to the thermistor 9 and the semiconductor refrigerator 10. The plurality of control pins 22 are connected to the respective control electrodes in the adjustable optical attenuation chip 4, and the power of optical signals of different wavelengths is modulated by an externally applied voltage. The plurality of detector pins 23 are respectively connected to the first conductive part and the second conductive part, and the detector pins 23 are suitable for receiving electrical signals.

[0095] According to an embodiment of the present disclosure, a plurality of detector pins 23 are respectively connected to the first conductive portion and the second conductive portion via wire bonding, and the wires may be, for example, gold wires.

[0096] According to the embodiment of the present disclosure, the temperature control pin 21, the regulating pin 22 and the detector pin 23 are made of gold evaporated on a nickel layer to ensure that the pads for wire bonding are tightly bonded to the temperature control pin 21, the regulating pin 22 and the detector pin 23 of the circuit board 2. When the wire is a gold wire, the gold plating of the nickel layer can ensure that the solder ball of the gold wire is firmly connected to the pin during the gold wire bonding process, further improving the overall reliability of the optoelectronic integrated detector.

[0097] Figure 8 1 is a top view of a circuit board 2 installed in a housing 1 according to an exemplary embodiment of the present disclosure.

[0098] According to the embodiments of the present disclosure, Figure 1 , Figure 7 and Figure 8 As shown, the multiple inner pins 14 of the housing 1 are in a connected state with the corresponding outer pins 15, and each inner pin 14 is in an insulated state with the adjacent outer pins 15. A plurality of pin holes 24 are provided at the edge of the circuit board 2, and the plurality of pin holes 24 are fixedly connected with the plurality of inner pins 14 of the housing 1 in sequence, and the pin spacing is set to the minimum pin spacing to ensure the 300MHz bandwidth output, so as to ensure the compact size packaging of the photoelectric integrated detector. The gap between the pin hole 24 and the inner pin 14 is made of a good conductive material, such as gold, copper, tin, etc., so that the external voltage applied to the outer pin 15 corresponding to the inner pin 14 controls the function of the photoelectric integrated detector, and the amplified electrical signal is received by the output module of the outer pin 15 corresponding to the inner pin 14.

[0099] According to an embodiment of the present disclosure, a plurality of fixing posts 16 are further provided on the housing 1 , and the fixing posts 16 are suitable for limiting the position of the circuit board 2 in the housing 1 .

[0100] According to the embodiments of the present disclosure, Figure 6 and Figure 7 As shown, fixing holes 25 are provided on the circuit board 2, and the circuit board 2 is fixedly connected with the fixing columns 16 on the shell 1 in sequence through the fixing holes 25. The gap between the fixing holes 25 and the fixing columns 16 is filled with gold-tin solder, so that the circuit board 2 is completely fixed inside the shell 1. The fixing columns 16 are fixed by ring welding to solve the problem of the photoelectric integrated detector falling off during transportation and use, thereby enhancing the stability and reliability of the photoelectric integrated detector.

[0101] Fig. 9 It is a stereoscopic view of a photoelectric integrated detector with a cover 17 covering the housing 1 according to an exemplary embodiment of the present disclosure.

[0102] According to the embodiments of the present disclosure, Fig. 9 As shown, the cover 17 of the housing 1 is consistent with the outer contour of the housing 1. After all components are packaged and fixed, the height of the highest surface of each component should be lower than the height of the highest top surface of the housing 1. The cover 17 is aligned with the outer contour of the housing 1 and then laser welded. The material of all parts of the housing 1 and the cover 17 is Kovar alloy, and the surface is gold-plated. Kovar alloy can meet the signal output of 300MHz and stable performance under working temperature. Compared with the housing 1 made of ceramic material, the housing 1 made of Kovar alloy has low cost and short production cycle, and can be mass-produced.

[0103] According to an embodiment of the present disclosure, external fixing holes 18 are further provided at the four corners of the exterior of the housing 1 , so that when the photoelectric integrated detector is used, the photoelectric integrated detector can be fixed in the use environment through the external fixing holes 18 .

[0104] It should also be noted that the directional terms mentioned in the embodiments, such as "upper", "lower", "front", "back", "left", "right", etc., are only reference directions of the drawings and are not intended to limit the scope of protection of the present disclosure. Throughout the drawings, the same elements are represented by the same or similar reference numerals. Conventional structures or configurations will be omitted when they may cause confusion in the understanding of the present disclosure, and the shapes and sizes of the components in the drawings do not reflect the actual size and proportion, but only illustrate the contents of the embodiments of the present disclosure.

[0105] Unless otherwise indicated, the numerical parameters in this specification and the appended claims are approximate values ​​and can vary according to the desired properties obtained through the content of the present disclosure. Specifically, all numbers used in the specification and claims to express the content of the composition, reaction conditions, etc., should be understood to be modified by the term "about" in all cases. In general, the meaning of the expression is to include a variation of ±10% in some embodiments, ±5% in some embodiments, ±1% in some embodiments, and ±0.5% in some embodiments by a specific number.

[0106] The ordinal numbers used in the specification and claims, such as "first", "second", "third", etc., to modify the corresponding elements, do not themselves mean that the elements have any ordinal numbers, nor do they represent the order of one element and another element, or the order in the manufacturing method. The use of these ordinal numbers is only used to clearly distinguish a component with a certain name from another component with the same name.

[0107] In addition, unless the steps are specifically described or must occur in sequence, the order of the above steps is not limited to the above list, and can be changed or rearranged according to the required design. And the above embodiments can be mixed and matched with each other or with other embodiments based on design and reliability considerations, that is, the technical features in different embodiments can be freely combined to form more embodiments.

[0108] The embodiments of the present disclosure are described above. However, these embodiments are only for illustrative purposes and are not intended to limit the scope of the present disclosure. Although the embodiments are described above separately, this does not mean that the measures in the various embodiments cannot be used in combination to advantage. The scope of the present disclosure is defined by the attached claims and their equivalents. Without departing from the scope of the present disclosure, those skilled in the art may make a variety of substitutions and modifications, which should all fall within the scope of the present disclosure.

Claims

1. A photoelectric integrated detector, comprising: case; A passive optical chip assembly is arranged in the housing and includes a wavelength division multiplexing chip suitable for decomposing an optical signal input from the outside into optical signals of different wavelengths; as well as An adjustable optical attenuation chip, adapted to perform power modulation on the optical signals of different wavelengths so as to balance the power of the optical signals of each wavelength; A detector array assembly is disposed in the housing and comprises: An array carrier, comprising a first electrode channel and a second electrode channel, wherein the first electrode channel comprises a first portion parallel to a plane where the second electrode channel is located and a second portion orthogonal to the plane where the second electrode channel is located; and a plurality of photodetectors, each of which is adapted to convert modulated optical signals having different wavelengths into electrical signals, each of which is mounted on a second portion of the first electrode channel, and a back electrode of the photodetector is electrically connected to a first conductive portion disposed on the second portion, a front electrode of the photodetector is electrically connected to a second conductive portion disposed on the second electrode channel, and the first conductive portion changes direction at a junction of the first portion and the second portion, so that the first conductive portion on the first portion is parallel to the second conductive portion on the second electrode channel; and The circuit board is suitable for being electrically connected to the passive optical chip assembly and the detector array assembly.

2. The photoelectric integrated detector according to claim 1, wherein: The array carrier is configured in a strip shape, the extension direction of the array carrier is orthogonal to the extension direction of the adjustable light attenuation chip, and the plurality of photodetectors are arranged in an array at intervals on the array carrier.

3. The photoelectric integrated detector according to claim 1, wherein: The passive optical chip assembly also includes: a thermistor, disposed on the upper side of the wavelength division multiplexing chip, the thermistor being adapted to detect the real-time operating temperature of the wavelength division multiplexing chip; and A semiconductor refrigerator is arranged at the lower side of the wavelength division multiplexing chip. The semiconductor refrigerator is suitable for controlling the temperature of the wavelength division multiplexing chip and the working environment of the wavelength division multiplexing chip according to the real-time working temperature to avoid temperature drift of the wavelength of the optical signal output by the wavelength division multiplexing chip.

4. The photoelectric integrated detector according to claim 3, wherein: The shell is provided with a groove, and the semiconductor cooler is arranged in the groove to reduce the packaging thickness of the photoelectric integrated detector.

5. The photoelectric integrated detector according to any one of claims 1 to 4, wherein: The adjustable optical attenuation chip includes a plurality of control electrodes. Voltage is applied to the control electrodes to perform power modulation on the optical signals of different wavelengths using the thermo-optical effect.

6. The photoelectric integrated detector according to claim 5, further comprising: A first heat sink is disposed on the lower side of the adjustable light attenuation chip, and the first heat sink is suitable for transferring heat generated by the thermo-optical effect to the outside of the housing.

7. The photoelectric integrated detector according to any one of claims 1 to 4, wherein: The detector array assembly further comprises: A second heat sink is disposed on the lower side of the array carrier, and the second heat sink is suitable for transferring heat generated by the photodetector to the outside of the shell.

8. The photoelectric integrated detector according to any one of claims 1 to 4, wherein: The material of the array carrier is an insulating material, the first conductive part includes a first conductor material plated on the surface of the first electrode channel, and the second conductive part includes a second conductor material plated on the surface of the second electrode channel and a wire connected between the second conductor material and the front electrode of the photodetector.

9. The photoelectric integrated detector according to claim 5, wherein: The circuit board comprises: A plurality of temperature control pins, electrically connected to the thermistor and the semiconductor refrigerator; A plurality of control pins are connected to the respective control electrodes in the adjustable optical attenuation chip, and power modulate the optical signals of different wavelengths through an externally applied voltage; A plurality of detector pins are respectively connected to the first conductive part and the second conductive part, and the detector pins are suitable for receiving the electrical signal.

10. The photoelectric integrated detector according to claim 4, wherein: The housing is also provided with a plurality of fixing posts, which are suitable for limiting the position of the circuit board in the housing.

Images