Driving substrate, chip transfer method and display panel

Abstract

The invention relates to the technical field of display, in particular to a driving substrate, a chip transfer method and a display panel, the driving substrate comprises a substrate, a plurality of driving electrodes and a hot melt adhesive layer, and the plurality of driving electrodes are arranged on the substrate at intervals in an array; the hot melt adhesive layer covers the driving electrode and the substrate, the hot melt adhesive layer comprises a hot melt adhesive material and a doping material doped in the hot melt adhesive material, and the doping material can change after the laser irradiates the hot melt adhesive layer so as to limit the flowing range of the hot melt adhesive material. According to the embodiment of the invention, the doping material is doped in the hot melt adhesive material, so that the characteristic that the doping material can change when the hot melt adhesive layer is irradiated by the laser so as to limit the flowing range of the hot melt adhesive material is utilized, and the problem of position deviation of the light-emitting chip caused by melting of the hot melt adhesive layer during laser precision deviation is solved; therefore, the transfer yield of the light-emitting chip can be improved.

Description

Technical Field

[0001] The present disclosure belongs to the field of display technology, and in particular relates to a driving substrate, a chip transfer method and a display panel. Background Art

[0002] The most common mass transfer technology in the field of display technology is laser transfer technology, which uses laser to release the light-emitting chips from the transfer substrate and then transfer them to the drive substrate in batches. Figures 1 to 3 As shown, currently, there is a precision deviation in the laser during mass transfer, causing part of the laser to irradiate the hot melt adhesive layer outside the light-emitting chip. Since the hot melt adhesive layer has a certain degree of wettability, the hot melt adhesive layer will be heated during laser irradiation, and the solvent in the hot melt adhesive material that makes up the hot melt adhesive layer will evaporate, causing the surrounding hot melt adhesive material to flow slightly, which in turn causes the light-emitting chip to be offset when transferred to the driving substrate, affecting the display effect and reliability of the display panel. Summary of the invention

[0003] The purpose of the present application is to provide a driving substrate, a chip transfer method and a display panel, by doping a doping material in the hot melt adhesive material to limit the flow range of the hot melt adhesive material.

[0004] The present disclosure provides a driving substrate, including:

[0005] substrate;

[0006] A plurality of driving electrodes are arranged in an array and spaced apart on the substrate;

[0007] A hot melt adhesive layer covers the driving electrode and the substrate, wherein the hot melt adhesive layer comprises a hot melt adhesive material and a doping material doped in the hot melt adhesive material.

[0008] The doping material can change after the laser irradiates the hot melt adhesive layer, so as to limit the flow range of the hot melt adhesive material.

[0009] In an exemplary embodiment of the present disclosure, the doping material includes first doping particles and second doping particles dispersed in the hot melt adhesive material.

[0010] The solvent of the hot melt adhesive material can volatilize when the laser irradiates the hot melt adhesive layer; the first doped particles and the second doped particles can move relative to each other during the volatilization of the solvent of the hot melt adhesive material and contact to form a solidified structure.

[0011] In an exemplary embodiment of the present disclosure, at least one of the first doped particles and the second doped particles is completely wrapped by a protective layer, and the protective layer can be photolyzed under the laser irradiation.

[0012] In an exemplary embodiment of the present disclosure, the first doped particles are epoxy resin, and the second doped particles are curing agent; the first doped particles and the second doped particles are in contact and undergo a cross-linking curing reaction;

[0013] Wherein, in the hot melt adhesive layer: the mass ratio of the hot melt adhesive material, the first doped particles and the second doped particles is: 5:2:1.

[0014] In an exemplary embodiment of the present disclosure, the first doped particles are acrylate, and the second doped particles are photoinitiators; wherein, in the hot melt adhesive layer: the mass ratio of the hot melt adhesive material, the first doped particles and the second doped particles is: 5:2:1.

[0015] In an exemplary embodiment of the present disclosure, the driving substrate includes a plurality of microstructures, the microstructures are arranged around the outer peripheral side of the driving electrode, and the side of the microstructure facing away from the substrate is not higher than the side of the hot melt adhesive layer facing away from the substrate, and the microstructure includes a plurality of support members arranged in an array at intervals, and the side of the support member facing away from the substrate is higher than the side of the driving electrode facing away from the substrate.

[0016] In an exemplary embodiment of the present disclosure, the microstructure further includes a raising structure, and the raising structure is located between the support member and the substrate, and the raising structure can be used to raise a plurality of the support members.

[0017] In an exemplary embodiment of the present disclosure, the orthographic projection of the doping material in the hot melt adhesive layer on the substrate does not overlap with the orthographic projection of the driving electrode on the substrate; or,

[0018] The hot melt adhesive layer includes a first portion and a second portion located on a side of the first portion away from the substrate, the first portion and the second portion both cover a side of the substrate close to the driving electrode, and the doping material is doped in the second portion except the first portion.

[0019] The present disclosure provides a chip transfer method, which includes:

[0020] Providing a transfer substrate, the transfer substrate having a base and a plurality of light-emitting chips arranged on the base;

[0021] Providing a driving substrate, the driving substrate comprising a substrate and a plurality of driving electrodes arranged in an array and spaced apart from each other on the substrate;

[0022] A hot melt adhesive layer is arranged on the driving electrode, the hot melt adhesive layer covers the driving electrode and the substrate, and the hot melt adhesive layer includes a hot melt adhesive material and a doping material doped in the hot melt adhesive material;

[0023] The substrate is placed opposite to the base, and a laser is used to irradiate the side of the transfer substrate away from the substrate. Under the action of the laser, the light-emitting chip is peeled off from the base and bound to the corresponding driving electrode; the doping material can change after the laser is irradiated to the hot melt adhesive layer to limit the flow range of the hot melt adhesive material.

[0024] An embodiment of the present disclosure provides a display panel, comprising a plurality of light-emitting chips and any one of the driving substrates described above, wherein the light-emitting chips are correspondingly bound to the driving electrodes in the driving substrate.

[0025] The technical solution provided by the embodiments of the present disclosure has at least the following advantages:

[0026] The disclosed embodiment dopes the hot melt adhesive material with doping materials, utilizing the property that the doping materials can change when the hot melt adhesive layer is irradiated by laser and can limit the flow range of the hot melt adhesive material, so as to improve the problem of positional displacement of the light-emitting chip caused by the melting of the hot melt adhesive layer when the laser precision is offset, thereby improving the transfer yield of the light-emitting chip.

[0027] Other features and advantages of the present application will become apparent from the following detailed description, or may be learned in part by the practice of the present application.

[0028] It should be understood that the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the present application. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] The accompanying drawings herein are incorporated into the specification and constitute a part of the specification, illustrate embodiments consistent with the present disclosure, and together with the specification are used to explain the principles of the present disclosure. Obviously, the accompanying drawings described below are only some embodiments of the present disclosure, and for ordinary technicians in this field, other accompanying drawings can be obtained based on these accompanying drawings without creative work.

[0030] Figure 1 A schematic diagram of the structure of laser precision offset in the related art is shown.

[0031] Figure 2 A schematic diagram of the structure of the volatilization of the solvent in the hot melt adhesive layer in the related art is shown.

[0032] Figure 3 A schematic diagram of the structure of the position offset of the light emitting chip in the related art is shown.

[0033] Figure 4 A schematic structural diagram of a driving substrate in an embodiment of the present disclosure is shown.

[0034] Figure 5 A schematic structural diagram of a hot melt adhesive layer in an embodiment of the present disclosure is shown.

[0035] Figure 6 Shows Figure 5 Schematic diagram of the structure in which laser irradiation causes solvent volatilization.

[0036] Figure 7 Shows Figure 6 Schematic diagram of the structure in which a solidified structure is formed.

[0037] Figure 8 A schematic diagram of the structure in which the first doped particles are completely wrapped by the protective layer in an embodiment of the present disclosure is shown.

[0038] Fig. 9 A schematic diagram of the structure in which the second doped particles are completely wrapped by the protective layer in an embodiment of the present disclosure is shown.

[0039] Fig.10 A schematic diagram of the structure in which the phase change energy storage material is doped in the hot melt adhesive material in an embodiment of the present disclosure is shown.

[0040] Fig.11 A schematic structural diagram of a microstructure and a padding structure arranged on a driving substrate according to an embodiment of the present disclosure is shown.

[0041] Fig.12 The schematic diagram shows the ideal and actual situations of forming microstructures by exposure in the embodiment of the present disclosure.

[0042] Fig.13 A schematic diagram of a structure in which a microstructure is arranged on a driving substrate in an embodiment of the present disclosure is shown.

[0043] Fig.14 A first structural schematic diagram of the hot melt adhesive layer in an embodiment of the present disclosure is shown.

[0044] Fig.15 A second structural schematic diagram of the hot melt adhesive layer in an embodiment of the present disclosure is shown.

[0045] Fig.16 A third structural schematic diagram of the hot melt adhesive layer in the embodiment of the present disclosure is shown.

[0046] Fig.17 A schematic diagram of the chip transfer process in an embodiment of the present disclosure is shown.

[0047] Description of reference numerals:

[0048] 11. Substrate; 12. Driving electrode; 13. Hot melt adhesive layer; 131. Hot melt adhesive material; 132. Solvent; 133. First doped particles; 134. Second doped particles; 135. Solidification structure; 136. Phase change energy storage material; 137. First part; 138. Second part; 14. Protective layer; 15. Support member; 16. Raised structure; 17. Low retaining wall; 21. Base; 22. Light emitting chip; 221. Main body; 222. Connecting electrode; 23. Adhesive layer. DETAILED DESCRIPTION

[0049] Example embodiments will now be described more fully with reference to the accompanying drawings. However, example embodiments can be implemented in a variety of forms and should not be construed as limited to the examples set forth herein; rather, these embodiments are provided so that this application will be more comprehensive and complete and fully convey the concept of the example embodiments to those skilled in the art.

[0050] In addition, described feature, structure or characteristic can be combined in one or more embodiments in any suitable manner. In the following description, many specific details are provided to provide a full understanding of the embodiments of the present application. However, those skilled in the art will appreciate that the technical scheme of the present application can be put into practice without one or more of the specific details, or other methods, components, devices, steps, etc. can be adopted. In other cases, known methods, devices, realizations or operations are not shown or described in detail to avoid blurring the various aspects of the application.

[0051] The present application is further described in detail below in conjunction with the accompanying drawings and specific embodiments. It should be noted that the technical features involved in the various embodiments of the present application described below can be combined with each other as long as they do not conflict with each other. The embodiments described below with reference to the accompanying drawings are exemplary and are intended to be used to explain the present application, and should not be understood as limiting the present application.

[0052] like Figure 4 As shown, the present disclosure provides a driving substrate, including a substrate 11, a plurality of driving electrodes 12 and a hot melt adhesive layer 13. The plurality of driving electrodes 12 are arranged in an array on the substrate 11 to provide a driving voltage. The hot melt adhesive layer 13 covers the driving electrodes 12 and the substrate 11, that is, the hot melt adhesive layer 13 covers a side of the substrate 11 close to the driving electrodes 12, and covers a side of the driving electrodes 12 away from the substrate 11.

[0053] Specifically, the hot melt adhesive layer 13 may include a hot melt adhesive material 131 and a doping material doped in the hot melt adhesive material 131. The hot melt adhesive material 131 has good temperature resistance, viscosity and flexibility. The hot melt adhesive material 131 can maintain an adhesive effect under a certain high temperature environment. The hot melt adhesive material 131 can achieve a connection and fixation between the drive substrate and other structures, and can also achieve buffering when the drive substrate contacts with other structures, so as to reduce the impact force when the drive substrate and other structures contact, and reduce the risk of damage to the drive substrate and other structures. In addition, the hot melt adhesive material 131 also has good hot melt properties. The hot melt adhesive material 131 can melt under specific heating conditions to facilitate separation from the substrate 11 and the drive electrode 12.

[0054] The doping material doped in the hot melt adhesive material 131 can change after the laser is irradiated to the hot melt adhesive layer 13 to limit the flow range of the hot melt adhesive material 131, thereby improving the problem that the hot melt adhesive material 131 located in the binding area between the driving electrode 12 and the light-emitting chip 22 flows when the driving electrode 12 in the driving substrate is correspondingly bound to the light-emitting chip 22, and causes the light-emitting chip 22 to shift in position, thereby improving the transfer yield of the light-emitting chip 22.

[0055] like Figures 5 to 7 As shown, in some embodiments, the doping material may include a first doping particle 133 and a second doping particle 134 dispersed in a hot melt adhesive material 131. The solvent 132 in the hot melt adhesive material 131 can absorb heat and volatilize when the laser irradiates the hot melt adhesive layer 13. The solvent 132 volatilizes and drives the surrounding doping material to flow, that is, the first doping particle 133 and the second doping particle 134 can move relative to each other during the volatilization of the solvent 132 in the hot melt adhesive material 131. During the movement, the distance between the first doping particle 133 and the second doping particle 134 decreases until they contact to form a solidified structure 135. The solidified structure 135 is fixed at the formed position to limit the flow of the hot melt adhesive material 131 and the doping material around it.

[0056] It should be noted that during the transfer process of the light-emitting chip 22, when the laser is irradiated onto the hot-melt adhesive layer 13, the side of the laser facing away from the substrate 11 is preferentially irradiated onto the side of the hot-melt adhesive layer 13 facing away from the substrate 11, and the solvent 132 on the side of the hot-melt adhesive layer 13 facing away from the substrate 11 evaporates before the solvent 132 on the side of the hot-melt adhesive layer 13 close to the substrate 11, so that the doping material on the side of the hot-melt adhesive layer 13 facing away from the substrate 11 can change before the doping material on the side of the hot-melt adhesive layer 13 close to the substrate 11, so as to limit the flow of the hot-melt adhesive material 131.

[0057] Specifically, Figure 6As shown, when the laser is irradiated onto the hot melt adhesive layer 13 from the side of the hot melt adhesive layer 13 facing away from the substrate 11, part of the solvent 132 in the hot melt adhesive material 131 on the side away from the substrate 11 evaporates, and the hot melt adhesive layer 13 forms a groove at the position where the solvent 132 evaporates. The first doped particles 133 and the second doped particles 134 near the groove flow toward the direction close to the groove under the action of the volatilized solvent 132, and the first doped particles 133 and the second doped particles 134 contact each other during the flow process and form a solidified structure 135.

[0058] Among them, Figure 7 As shown, the solidified structure 135 can be formed on the surface of the groove to form the inner side wall of the groove. However, it is not limited thereto, and the solidified structure 135 can also be formed at any other position except the surface of the groove, which can be determined according to the actual situation. The hot melt adhesive material 131 and the doping material at other positions away from the groove are normally distributed, that is, the first doped particles 133 and the second doped particles 134 at other positions away from the groove are not affected by the volatilized solvent 132 or are less affected, so that the first doped particles 133 and the second doped particles 134 are still in an interval distribution state.

[0059] In the embodiment of the present disclosure, the formed solidified structure 135 can be used to limit the flow of the hot melt adhesive material 131 and the doping material around it, so as to improve the positional offset problem that occurs when the light-emitting chip 22 is transferred to the driving substrate, and then improve the transfer yield of the light-emitting chip 22. In addition, the formed solidified structure 135 can also limit the laser irradiation to the side of the hot melt adhesive layer 13 close to the substrate 11, that is, after the solidified structure 135 is formed, the solidified structure 135 can weaken the intensity of the laser or block the laser to reduce or avoid the laser irradiation to the hot melt adhesive material 131 on the side of the solidified structure 135 close to the substrate 11, thereby reducing the volatilization of the solvent 132 in the hot melt adhesive material 131, reducing the flow of the hot melt adhesive material 131 and the doping material, and improving the positional offset problem that occurs when the light-emitting chip 22 is transferred to the driving substrate.

[0060] In some embodiments, the first doping particles 133 and the second doping particles 134 may be spherical structures, wherein the diameters of the first doping particles 133 and the second doping particles 134 may range from 1 um to 5 um.

[0061] For example, the diameters of the first doping particles 133 and the second doping particles 134 may be 1 um, 2 um, 3 um, 4 um, or 5 um, but are not limited thereto. The diameters of the first doping particles 133 and the second doping particles 134 may be determined according to actual conditions.

[0062] In some embodiments, the first doped particles 133 may be epoxy resin, and the second doped particles 134 may be curing agents. In this case, a cross-linking curing reaction may occur after the first doped particles 133 and the second doped particles 134 come into contact. When the solvent 132 evaporates under the action of the laser, the strength of the first doped particles 133 increases after contacting the second doped particles 134, and solidifies to form a solidified structure 135. The solidified structure 135 may be used to inhibit the flow of the hot melt adhesive material 131 and the doped material in the hot melt adhesive layer 13, thereby improving the problem of positional deviation when the light emitting chip 22 is transferred, and ensuring the display effect and reliability of the formed display panel.

[0063] For example, the curing agent in this embodiment may include: one of vinyltriamine, diaminocyclohexane, methylenebiscyclohexaneamine, and diethylenetriamine, but is not limited thereto. Other curing agents that can undergo cross-linking and curing reactions with epoxy resins may be included in the disclosed embodiments.

[0064] In the embodiment of the present disclosure, the mass ratio of the hot melt adhesive material 131, the first doped particles 133, and the second doped particles 134 in the hot melt adhesive layer 13 can be 5:2:1. However, it is not limited thereto. When the mass ratio of the hot melt adhesive material 131, the first doped particles 133, and the second doped particles 134 in the hot melt adhesive layer 13 is other values, the hot melt adhesive layer 13 can still have good buffering, adhesion, and hot melt properties, and the solidified structure 135 formed by the contact between the first doped particles 133 and the second doped particles 134 can be used to limit the flow of the hot melt adhesive material 131, which can be included in the embodiment of the present disclosure.

[0065] In some embodiments, the first doping particles 133 may be acrylate, and the second doping particles 134 may be a photoinitiator.

[0066] It should be noted that when the laser irradiates the hot melt adhesive layer 13 , the first doped particles 133 undergo photopolymerization reaction under the irradiation of the laser, and the first doped particles 133 form long-chain substances and begin to solidify.

[0067] Specifically, the first doped particles 133 are excited by absorbing light energy, so that the double bonds in the molecules thereof are broken and active free radicals are generated. These active free radicals react with other first doped particles 133 to form long-chain polymers, that is, to form a solidified structure 135. The embodiment of the present disclosure forms a solidified structure 135 to suppress the flow of the hot melt adhesive material 131 and the doped material in the hot melt adhesive layer 13, thereby improving the positional deviation problem during the transfer of the light emitting chip 22, thereby improving the transfer yield of the light emitting chip 22, and improving the display effect and reliability of the formed display panel.

[0068] In the embodiment of the present disclosure, when the solvent 132 in the hot-melt adhesive material 131 evaporates, the first doped particles 133 and the second doped particles 134 move relative to each other and come into contact with each other. The second doped particles 134 can induce the first doped particles 133 to undergo a photopolymerization reaction, thereby increasing the formation rate of the solidified structure 135. While reducing the flow of the hot-melt adhesive material 131 and the doped material, the solidified structure 135 can also block or weaken the laser to reduce the volatilization of the solvent 132 located on the side of the solidified structure 135 close to the substrate 11, thereby improving the problem of positional displacement when the light-emitting chip 22 is transferred to the driving substrate.

[0069] It should be understood that when the first doped particle 133 is acrylate, the first doped particle 133 can undergo photopolymerization reaction under the irradiation of laser and form a solidified structure 135. Therefore, the doping material in the embodiment of the present disclosure may not include second doping particles 134 such as photoinitiators to reduce the use of doping materials and reduce the manufacturing cost of the drive substrate.

[0070] In the embodiment of the present disclosure, the mass ratio of the hot melt adhesive material 131, the first doped particles 133, and the second doped particles 134 in the hot melt adhesive layer 13 is 5:2:1. However, it is not limited thereto. When the mass ratio of the hot melt adhesive material 131, the first doped particles 133, and the second doped particles 134 in the hot melt adhesive layer 13 is other values, the hot melt adhesive layer 13 still has good buffering, adhesion, and hot melt properties, and the solidified structure 135 formed by the contact between the first doped particles 133 and the second doped particles 134 can limit the movement of the hot melt adhesive material 131, which can be included in the embodiment of the present disclosure.

[0071] For example, the photoinitiator in the embodiment of the present disclosure may include: benzoyl diethyl dithiocarbonyl, diphenyl acetone, but is not limited thereto. Other photoinitiators that can promote the photopolymerization reaction of acrylates may be included in the embodiment of the present disclosure.

[0072] like Figures 8 to 9 As shown, in some embodiments, at least one of the first doped particles 133 and the second doped particles 134 is completely wrapped by the protective layer 14, and the protective layer 14 can be photolyzed under laser irradiation. By providing the protective layer 14, the disclosed embodiment can separate the first doped particles 133 and the second doped particles 134, and can also be photolyzed under the action of laser, so that the first doped particles 133 and the second doped particles 134 can contact to form a solidified structure 135 when they move relative to each other under the action of the volatilized solvent 132.

[0073] For example, Figure 8As shown, the embodiment of the present disclosure can completely wrap the first doped particles 133 in the hot melt adhesive layer 13 in the protective layer 14, so that the first doped particles 133 are separated from the second doped particles 134, and avoid the problem that when the first doped particles 133 and the second doped particles 134 are doped in the hot melt adhesive layer 13, the first doped particles 133 and the second doped particles 134 are not mixed evenly with the hot melt adhesive material 131, so that the first doped particles 133 and the second doped particles 134 contact each other and form a solidified structure 135 before the solvent 132 evaporates. In addition, by providing the protective layer 14 to separate the first doped particles 133 and the second doped particles 134, it is also possible to avoid the first doped particles 133 and the second doped particles 134 moving relative to each other during the removal process and contacting to form a solidified structure 135 when the light-emitting chip 22 is transferred and the hot melt adhesive layer 13 needs to be removed, thereby improving the situation that the hot melt adhesive layer 13 is difficult to completely remove from the substrate 11 and the driving electrode 12.

[0074] But not limited to this, such as Fig. 9 As shown, in the embodiment of the present disclosure, the second doped particles 134 in the hot melt adhesive layer 13 can also be completely wrapped in the protective layer 14. Alternatively, in the embodiment of the present disclosure, the protective layer 14 can be used to wrap the outer sides of the first doped particles 133 and the second doped particles 134 respectively, so as to separate the first doped particles 133 and the second doped particles 134 from each other by using the protective layer 14.

[0075] In some embodiments, the material of the protective layer 14 may include polyacrylamide, but is not limited thereto. Other materials that can be photolyzed under the action of laser and do not react with the first doped particles 133 and the second doped particles 134 may also be included in the embodiments of the present disclosure.

[0076] In some embodiments, the thickness of the protective layer 14 may range from 0.1 um to 0.5 um.

[0077] For example, the thickness of the protective layer 14 may be 0.1 um, 0.2 um, 0.3 um, 0.4 um, or 0.5 um, but is not limited thereto. The thickness of the protective layer 14 may be determined according to actual conditions.

[0078] like Fig.10 As shown, in some embodiments, the doping material may also include a phase change energy storage material 136. The phase change energy storage material 136 may absorb heat when the temperature is greater than a first preset temperature, and release heat when the temperature is less than a second preset temperature. The first preset temperature and the second preset temperature here may be determined according to the specific type of the phase change energy storage material 136.

[0079] Specifically, when the laser irradiates the hot melt adhesive layer 13, the hot melt adhesive layer 13 begins to be heated. At this time, the phase change energy storage material 136 absorbs heat energy through phase change, so that the overall temperature of the hot melt adhesive material 131 remains unchanged, thereby inhibiting the volatilization of the solvent 132 in the hot melt adhesive material 131 and inhibiting the flow of the hot melt adhesive material 131 and the doping material, thereby improving the problem of positional deviation when the light-emitting chip 22 is transferred, and ensuring the display effect and reliability of the formed display panel.

[0080] In the embodiment of the present disclosure, the phase change energy storage material 136 may be a solid-solid phase change energy storage material 136. For example, the solid-solid phase change energy storage material 136 may include: one or more of graphene, inorganic salts, polyols, and cross-linked high-density polyethylene.

[0081] But not limited thereto, the phase change energy storage material 136 may also be a solid-liquid phase change energy storage material 136. For example, the solid-liquid phase change energy storage material 136 may include: one or more of paraffin, polyethylene glycol, polyvinyl alcohol, and polyurethane.

[0082] like Fig.11 As shown, in some embodiments, the driving substrate may include a plurality of microstructures, the microstructures are arranged around the outer peripheral side of the driving electrode 12, and the side of the microstructure facing away from the substrate 11 is not higher than the side of the hot melt adhesive layer 13 facing away from the substrate 11, that is, the microstructure is embedded in the hot melt adhesive layer 13 as a whole to reduce the impact on the binding of the light-emitting chip 22 to the driving electrode 12 when the microstructure is too high.

[0083] Specifically, the light emitting chip 22 may include a main body 221 and a connecting electrode 222 that are connected to each other, and the connecting electrode 222 is used to bind to the driving electrode 12. When the light emitting chip 22 is bound to the driving electrode 12 on the driving substrate, the connecting electrode 222 faces the driving electrode 12, and the side of the microstructure facing away from the substrate 11 is lower than the side of the main body 221 close to the connecting electrode 222, thereby improving the effect of the microstructure being too high on the binding of the light emitting chip 22 to the driving electrode 12.

[0084] In the embodiment of the present disclosure, the microstructure may include a plurality of support members 15 arranged in an array and spaced apart from each other, and a side of the support member 15 facing away from the substrate 11 is higher than a side of the driving electrode 12 facing away from the substrate 11 .

[0085] According to the principle of capillary phenomenon, the embodiment of the present disclosure utilizes the support member 15 in the hot melt adhesive layer 13 to receive more doping materials. That is, compared with the technical solution without the support member 15, the embodiment of the present disclosure can enable more doping materials to be attached to the support member 15 by providing the support member 15. When the hot melt adhesive layer 13 is irradiated with laser, the doping materials can change more quickly to inhibit the flow of the hot melt adhesive material 131, thereby improving the problem of positional displacement when the light-emitting chip 22 is transferred to the driving substrate.

[0086] For example, the support member 15 in the embodiment of the present disclosure may be a pyramidal or conical structure, but is not limited thereto. The support member 15 may also be a regular shape such as a prism or a cylinder, or other irregular shapes to accommodate more doping materials.

[0087] In some embodiments, the microstructure may further include a padding structure 16 , and the padding structure 16 is located between the support member 15 and the substrate 11 .

[0088] In the disclosed embodiment, a raising structure 16 can be used to raise the plurality of supporting members 15 .

[0089] For example, when the side of the support 15 on the driving substrate facing away from the substrate 11 is slightly higher than the side of the driving electrode 12 facing away from the substrate 11, a padding structure 16 can be set between the substrate 11 and the support 15 to improve the problem that the capillary phenomenon cannot occur due to the support 15 being too low.

[0090] In addition, when the side surface of the support member 15 is an inclined surface with a fixed inclination angle and the gap between two adjacent support members 15 is constant, by setting a cushioning structure 16, the problem of difficulty in forming a microstructure in an ideal state due to the small gap between adjacent support members 15 at the bottom position close to the substrate 11 can be improved.

[0091] Specifically, if Fig.12 As shown, the support member 15 in the embodiment of the present disclosure can be formed by an exposure process. Due to the process limit in the current exposure process, when the gap between two adjacent support members 15 is small, the exposure process cannot remove the excess material between the two support members 15, which will cause the spacing between the two adjacent support members 15 to be different, and cause the area of ​​the surface of the support member 15 that can be used to receive the doping material to be reduced, which in turn causes the doping material that the support member 15 can carry to be reduced. The embodiment of the present disclosure reduces the difficulty of forming the support member 15 by providing a cushioning structure 16 on the side of the support member 15 close to the substrate 11, and can effectively ensure the area of ​​the surface of the support member 15 that is used to receive the doping material, so as to increase the rate at which the doping material changes under laser irradiation, inhibit the flow of the hot melt adhesive material 131, and thus improve the problem of positional displacement when the light-emitting chip 22 is transferred to the driving substrate.

[0092] But it should be noted that Fig.13 As shown, when the height of the driving electrode 12 in the driving substrate is relatively small, the present disclosure may not provide the padding structure 16 in the microstructure, so as to simplify the manufacturing process of the driving substrate and save the manufacturing cost.

[0093] In some embodiments, a plurality of padding structures 16 may be disposed on the driving substrate. For example, the padding structures 16 may be rectangular bodies, and a plurality of support members 15 may be disposed on a side of each padding structure 16 facing away from the substrate 11 .

[0094] However, it is not limited thereto, in some embodiments, a padding structure 16 may also be provided on the driving substrate. For example, in the embodiment of the present disclosure, a layer of padding material may be laid on the substrate 11 to form the padding structure 16, and the support members 15 on the driving substrate are all provided on the side of the padding structure 16 away from the substrate 11.

[0095] In some embodiments, the support member 15 and the raising structure 16 in the microstructure can be formed integrally to simplify the manufacturing process of the microstructure, but is not limited to this. The support member 15 and the raising structure 16 can also be formed separately and then connected to form the microstructure.

[0096] In some embodiments, the orthographic projection of the doping material in the hot melt adhesive layer 13 on the substrate 11 may not overlap with the orthographic projection of the driving electrode 12 on the substrate 11 .

[0097] For example, in the embodiment of the present disclosure, the orthographic projection of the doping material in the hot melt adhesive layer 13 on the substrate 11 can be located in an area outside the orthographic projection of the driving electrode 12 on the substrate 11. When the light-emitting chip 22 is transferred to the driving substrate, the hot melt adhesive material 131 on the driving electrode 12 can buffer and fix the light-emitting chip 22. At the same time, the area doped with the doping material in the hot melt adhesive layer 13 can form a solidified structure 135 when irradiated with a laser to limit the flow of the hot melt adhesive material 131, thereby improving the problem of positional displacement when the light-emitting chip 22 is transferred to the driving substrate. In addition, the embodiment of the present disclosure can reduce the use of doping materials by doping some areas of the hot melt adhesive layer 13 with doping materials and not doping some areas with doping materials, thereby reducing the manufacturing cost of the driving substrate.

[0098] like Fig.14 As shown, in some embodiments, after the light-emitting chip 22 is aligned with the driving electrode 12, if the orthographic projection of the driving electrode 12 on the substrate 11 is located within the orthographic projection of the light-emitting chip 22 on the substrate 11, at this time, the embodiment of the present disclosure can also make the orthographic projection of the doping material in the hot melt adhesive layer 13 on the substrate 11 located in an area outside the orthographic projection of the light-emitting chip 22 on the substrate 11.

[0099] like Fig.15 As shown, in some embodiments, a low retaining wall 17 can be set in the hot melt adhesive layer 13, and the low retaining wall 17 is located between the area where the doping material is located and the area not doped with the doping material, and the bottom surface of the low retaining wall 17 is connected to the substrate 11, and the top surface of the low retaining wall 17 is higher than the side of the driving electrode 12 facing away from the substrate 11, and the top surface of the low retaining wall 17 is lower than the side of the hot melt adhesive layer 13 facing away from the substrate 11.

[0100] Specifically, when the light emitting chip 22 is transferred to the driving substrate and bound to the driving electrode 12, the top surface of the low retaining wall 17 is lower than the side of the main body 221 of the light emitting chip 22 close to the connecting electrode 222. The embodiment of the present disclosure can limit the flow of doping materials to the area not doped with doping materials to a certain extent by setting the low retaining wall 17, thereby reducing the influence of doping materials on the buffering performance of the hot melt adhesive layer 13 corresponding to the binding area of ​​the light emitting chip 22 and the driving electrode 12. At the same time, by setting the retaining wall, the content of doping materials in the area doped with doping materials can be guaranteed, thereby improving the situation that when the laser is irradiated to the area doped with doping materials due to the low content of doping materials in the hot melt adhesive layer 13 in the area that may be irradiated by the laser, the change of doping materials is not enough to limit the flow of hot melt adhesive material 131.

[0101] In the embodiment of the present disclosure, when the laser is irradiated onto the hot melt adhesive layer 13, the laser is irradiated onto the area doped with the doping material in the hot melt adhesive layer 13, so that the light-emitting chip 22 is buffered and fixed by the hot melt adhesive material 131 on the driving electrode 12, and the doping material in the hot melt adhesive layer 13 is used to form a solidified structure 135 to inhibit the flow of the hot melt adhesive material 131, thereby improving the problem of positional displacement when the light-emitting chip 22 is transferred to the driving substrate, and reducing the use of doping materials, thereby reducing the manufacturing cost of the driving substrate.

[0102] like Fig.16 As shown, in some embodiments, the hot melt adhesive layer 13 may include a first portion 137 and a second portion 138 located on a side of the first portion 137 facing away from the substrate 11, the first portion 137 and the second portion 138 both cover a side of the substrate 11 close to the driving electrode 12, and the doping material is doped in the second portion 138 except the first portion 137.

[0103] Specifically, the embodiment of the present disclosure dopes the doping material in the second portion 138 so that the hot melt adhesive layer 13 changes using the doping material when irradiated by the laser, thereby inhibiting the flow of the hot melt adhesive material 131 and improving the problem of positional displacement when the light emitting chip 22 is transferred to the driving substrate. Since the first portion 137 of the hot melt adhesive layer 13 close to the substrate 11 is not doped with the doping material, the embodiment of the present disclosure can also reduce the use of doping materials while ensuring the buffering performance of the hot melt adhesive layer 13 during the alignment and binding between the driving electrode 12 and the light emitting chip 22, thereby reducing the manufacturing cost of the driving substrate.

[0104] refer to Fig.17 As shown, the present disclosure provides a chip transfer method, which may include:

[0105] S1. Provide a transfer substrate, wherein the transfer substrate has a base and a plurality of light-emitting chips disposed on the base.

[0106] The plurality of light emitting chips 22 may be arranged in an array and spaced apart on the substrate 21 .

[0107] For example, the light emitting chips 22 on the transfer substrate may correspond one-to-one with the driving electrodes 12 on the driving substrate, but it is not limited thereto. The light emitting chips 22 on the transfer substrate may correspond to part of the driving electrodes 12 on the driving substrate, depending on the actual situation.

[0108] In some embodiments, the transfer substrate also includes an adhesive layer 23, which is located on the side of the base 21 close to the light-emitting chip 22, so as to firmly bond the light-emitting chip 22 to the base 21, thereby reducing the risk of the light-emitting chip 22 falling off the base 21 due to loose bonding during the transfer process.

[0109] Specifically, the adhesive layer 23 may cover a side of the substrate 21 close to the light emitting chip 22. The main body 221 of the light emitting chip 22 may be partially embedded in the adhesive layer 23 to increase the connection surface between the light emitting chip 22 and the adhesive layer 23 and enhance the stability of the connection between the light emitting chip 22 and the substrate 21.

[0110] The chip transfer method may further include: S2, providing a driving substrate, wherein the driving substrate comprises a substrate and a plurality of driving electrodes arranged in an array and spaced apart from each other on the substrate.

[0111] For example, a driving material layer may be formed on the substrate 11 first, and then the driving material layer may be etched to form a plurality of driving electrodes 12 arranged in an array at intervals.

[0112] The steps after forming the driving electrode 12 include: S3, setting a hot melt adhesive layer on the driving electrode, the hot melt adhesive layer covers the driving electrode and the substrate, and the hot melt adhesive layer includes a hot melt adhesive material and a doping material doped in the hot melt adhesive material.

[0113] In some embodiments, the doping material may be uniformly doped in the entire hot melt adhesive layer 13. At this time, the present embodiment may first uniformly dope the doping material in the hot melt adhesive material 131 to form a mixed material, and then apply the formed mixed material on the substrate 11 and the driving electrode 12 to form the hot melt adhesive layer 13.

[0114] In some embodiments, the orthographic projection of the doping material on the substrate 11 may only cover a partial area of ​​the substrate 11 .

[0115] For example, when the orthographic projection of the doping material in the hot melt adhesive layer 13 on the substrate 11 is located in an area outside the orthographic projection of the driving electrode 12 on the substrate 11, the mixed material and the hot melt adhesive material 131 can be respectively applied to the corresponding areas on the substrate 11 and the driving electrode 12 to form a hot melt adhesive layer 13.

[0116] Specifically, a hot melt adhesive material 131 and a mixed material (i.e., a hot melt adhesive material 131 doped with a doping material) can be formed separately first, and then the hot melt adhesive material 131 is spot-coated on the side of the driving electrode 12 facing away from the substrate 11, and the mixed material is spot-coated on the area on the substrate 11 not covered by the hot melt adhesive material 131, so that the side of the mixed material facing away from the substrate 11 is flush with the side of the hot melt adhesive material 131 facing away from the substrate 11, thereby forming a hot melt adhesive layer 13.

[0117] It should be noted that the order of applying the hot melt adhesive material 131 and the mixed material in the embodiment of the present disclosure can be interchanged at will. That is, the hot melt adhesive material 131 can be applied first, and then the mixed material can be applied. Alternatively, the mixed material can be applied first, and then the hot melt adhesive material 131 can be applied. Alternatively, the mixed material and the hot melt adhesive material 131 can be applied at the same time, which can be determined according to actual conditions.

[0118] In some embodiments, the hot melt adhesive layer 13 may include a first portion 137 and a second portion 138 located on a side of the first portion 137 facing away from the substrate 11, the first portion 137 and the second portion 138 both cover a side of the substrate 11 close to the driving electrode 12, and the doping material is doped in the second portion 138 except the first portion 137. At this time, the hot melt adhesive material 131 and the mixed material (i.e., the hot melt adhesive material 131 doped with the doping material) may be formed separately first, and the hot melt adhesive material 131 may be applied to the substrate 11 and the driving electrode 12 to form the first portion 137 covering the substrate 11 and the driving electrode 12. The mixed material may be applied to the side of the first portion 137 facing away from the substrate 11 to form the second portion 138 covering the first portion 137, thereby completing the preparation of the hot melt adhesive layer 13. Compared with the technical solution of applying different materials in different areas to form the hot melt adhesive layer 13, the embodiment of the present disclosure can reduce the difficulty of preparing the hot melt adhesive layer 13 and simplify the preparation process of the hot melt adhesive layer 13, thereby improving the manufacturing efficiency of the driving substrate.

[0119] The chip transfer method may also include: S4, placing the substrate and the base opposite to each other, and using laser to irradiate the side of the transfer substrate away from the substrate. Under the action of the laser, the light-emitting chip is peeled off from the base and bound to the corresponding driving electrode; the doping material can change after the laser is irradiated to the hot melt adhesive layer to limit the flow range of the hot melt adhesive material.

[0120] Specifically, when the substrate 11 and the base 21 are placed opposite to each other, the light emitting chip 22 on the base 21 and the driving electrode 12 on the substrate 11 correspond to each other, so as to realize the binding between the light emitting chip 22 and the driving electrode 12. When the laser is used to irradiate the side of the transfer substrate away from the substrate 11 to peel the light emitting chip 22 from the base 21, the laser may have a precision deviation, resulting in part of the laser irradiating the hot melt adhesive layer 13 outside the light emitting chip 22. Since the hot melt adhesive material 131 has a certain wettability, the hot melt adhesive material 131 will be heated during laser irradiation, and the solvent 132 in the hot melt adhesive material 131 will evaporate, causing the surrounding hot melt adhesive material 131 to flow, thereby causing the light emitting chip 22 to be offset and affecting the display effect of the display panel.

[0121] To solve the above problems, the embodiment of the present disclosure dopes the hot-melt adhesive material 131 with doping materials, and utilizes the property that the doping materials change when irradiated with laser to limit the flow range of the hot-melt adhesive material 131, thereby improving the problem of positional displacement during the transfer of the light-emitting chip 22, thereby improving the transfer yield of the light-emitting chip 22 and improving the display effect of the display panel.

[0122] It should be noted that the chip transfer method in the embodiment of the present disclosure can be applied to transfer the light emitting chip 22 to any of the above-mentioned driving substrates.

[0123] The embodiment of the present disclosure further provides a display panel, which includes a plurality of light-emitting chips 22 and any one of the driving substrates described above, wherein the light-emitting chips 22 are correspondingly bound to the driving electrodes 12 in the driving substrate.

[0124] It should be noted that, in some embodiments, the hot melt adhesive layer 13 on the driving substrate may be retained in the display panel to enhance the stability of the connection between the light emitting chip 22 and the driving electrode 12 .

[0125] However, the present invention is not limited thereto. In other embodiments, the hot melt adhesive layer 13 on the driving substrate may be removed before forming the display panel. For example, in the embodiment of the present disclosure, the driving substrate may be heated after the transfer of the light emitting chip 22 is completed to completely remove the hot melt adhesive layer 13 from the substrate 11.

[0126] It should be noted that the display panel in the present disclosure may be a Micro LED (micro light emitting diode) display panel, a Mini LED (sub-millimeter light emitting diode) display panel, and the like, and the specific type may be determined according to actual conditions.

[0127] In the description of this specification, the terms "first", "second", "third", etc. are used for descriptive purposes only and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first", "second", "third" may explicitly or implicitly include one or more of the features. In the description of this application, the meaning of "plurality" is two or more, unless otherwise clearly and specifically defined.

[0128] In addition, it should be noted that "upper", "lower", "left", "right" and the like are only used for distinction to facilitate description, and do not impose any directional limitations on the embodiments of the present invention. For example, the "upper" may actually be "lower", "left", "right" and other directions. In the present disclosure, unless otherwise clearly specified and limited, the terms "assembly", "connection" and the like should be understood in a broad sense. For example, it may be a fixed connection, a detachable connection, or an integral whole; it may be a mechanical connection or an electrical connection; it may be a direct connection or an indirect connection through an intermediate medium; it may be the internal connection of two elements or the interaction relationship between two elements. For those of ordinary skill in the art, the specific meanings of the above terms in the present disclosure can be understood according to the specific circumstances.

[0129] In the description of this specification, the description with reference to the terms "some embodiments", "exemplarily", etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present application. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art may combine and combine the different embodiments or examples described in this specification and the features of the different embodiments or examples, without contradiction.

[0130] Although the embodiments of the present application have been shown and described above, it can be understood that the above embodiments are exemplary and cannot be understood as limitations on the present application. Ordinary technicians in this field can change, modify, replace and modify the above embodiments within the scope of the present application. Therefore, any changes or modifications made in accordance with the claims and description of the present application should fall within the scope of the patent of this application.

Claims

1. A driving substrate, characterized in that: include: substrate; A plurality of driving electrodes are arranged in an array and spaced apart on the substrate; A hot melt adhesive layer covers the driving electrode and the substrate, wherein the hot melt adhesive layer comprises a hot melt adhesive material and a doping material doped in the hot melt adhesive material. The doping material can change after the laser irradiates the hot melt adhesive layer, so as to limit the flow range of the hot melt adhesive material.

2. The driving substrate according to claim 1, characterized in that: The doping material includes first doping particles and second doping particles dispersed in the hot melt adhesive material, The solvent of the hot melt adhesive material can volatilize when the laser irradiates the hot melt adhesive layer; the first doped particles and the second doped particles can move relative to each other during the volatilization of the solvent of the hot melt adhesive material and contact to form a solidified structure.

3. The driving substrate according to claim 2, characterized in that: At least one of the first doped particles and the second doped particles is completely wrapped by a protective layer, and the protective layer can be photolyzed under the laser irradiation.

4. The driving substrate according to claim 2, characterized in that: The first doped particles are epoxy resin, and the second doped particles are curing agent; the first doped particles and the second doped particles are in contact and undergo a cross-linking curing reaction; Wherein, in the hot melt adhesive layer: the mass ratio of the hot melt adhesive material, the first doped particles and the second doped particles is: 5:2:

1.

5. The driving substrate according to claim 2, characterized in that: The first doped particles are acrylate, and the second doped particles are photoinitiators; wherein, in the hot melt adhesive layer, the mass ratio of the hot melt adhesive material, the first doped particles and the second doped particles is 5:2:

1.

6. The driving substrate according to claim 1, characterized in that: The driving substrate includes a plurality of microstructures, the microstructures are arranged around the outer peripheral side of the driving electrode, and the side of the microstructure facing away from the substrate is not higher than the side of the hot melt adhesive layer facing away from the substrate, the microstructure includes a plurality of support members arranged in an array at intervals, and the side of the support member facing away from the substrate is higher than the side of the driving electrode facing away from the substrate.

7. The driving substrate according to claim 6, characterized in that: The microstructure further includes a padding structure, which is located between the support member and the substrate. The padding structure can be used to pad a plurality of the support members.

8. The driving substrate according to claim 1, characterized in that: The orthographic projection of the doping material in the hot melt adhesive layer on the substrate does not overlap with the orthographic projection of the driving electrode on the substrate; or, The hot melt adhesive layer includes a first portion and a second portion located on a side of the first portion away from the substrate, the first portion and the second portion both cover a side of the substrate close to the driving electrode, and the doping material is doped in the second portion except the first portion.

9. A chip transfer method, characterized in that: The chip transfer method comprises: Providing a transfer substrate, the transfer substrate having a base and a plurality of light-emitting chips arranged on the base; Providing a driving substrate, the driving substrate comprising a substrate and a plurality of driving electrodes arranged in an array and spaced apart from each other on the substrate; A hot melt adhesive layer is arranged on the driving electrode, the hot melt adhesive layer covers the driving electrode and the substrate, and the hot melt adhesive layer includes a hot melt adhesive material and a doping material doped in the hot melt adhesive material; The substrate is placed opposite to the base, and a laser is used to irradiate the side of the transfer substrate away from the substrate. Under the action of the laser, the light-emitting chip is peeled off from the base and bound to the corresponding driving electrode; the doping material can change after the laser is irradiated to the hot melt adhesive layer to limit the flow range of the hot melt adhesive material.

10. A display panel, characterized in that: The invention comprises a plurality of light emitting chips and a driving substrate as claimed in any one of claims 1 to 8, wherein the light emitting chips are bound correspondingly to the driving electrodes in the driving substrate.

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