Display device and method of providing the same

Abstract

The invention relates to a display device and a method of providing the same. The display device includes: a display area including: an emission area including a light emitting element; a non-emission area including: a pixel defining layer defining a first opening corresponding to the light emitting element; and a bank on the pixel defining layer and defining a second opening corresponding to the first opening, the bank having a tip at the second opening; and a first encapsulation layer on the light emitting element and the bank; the non-display area is adjacent to the display area; a flow control layer in the display area and in the non-display area, the flow control layer including: an auxiliary encapsulation layer in the display area; and a fluorine ion layer in the non-display area; and a second encapsulation layer extending along the flow control layer in the display area and in the non-display area.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims priority to and all benefits derived from Korean Patent Application No. 10-2023-0153303, filed on November 8, 2023, the entire contents of which are incorporated herein by reference. Technical Field

[0003] The present disclosure relates to a display device and a method of providing (or manufacturing) a display device. Background Art

[0004] As the information society develops, the demand for display devices for displaying images is increasing in various forms. The display device may be a flat panel display device such as a liquid crystal display, a field emission display, and a light emitting display.

[0005] The display device includes a display area that displays an image and a non-display area disposed along (eg, surrounding) the display area. The width of the non-display area has been gradually reduced to increase the sense of immersion in the display area and enhance the aesthetic appearance of the display device.

[0006] In addition, with the development of various electronic devices, the demand for high-resolution display devices is increasing. Since the high-resolution display device has a high pixel density, the gap between the plurality of light-emitting elements respectively overlapping the plurality of emission regions can be reduced. Therefore, the high-resolution display device can be provided (or formed) by a pattern process for forming a separate structure of display pixels. Summary of the invention

[0007] Aspects of the present disclosure are to maximize the area of ​​a display region (eg, plan area) within a display device by minimizing the area of ​​a non-display region of the display device.

[0008] Aspects of the present disclosure also provide a high-resolution display device by providing (or forming) individual structures of display pixels using a pattern process.

[0009] However, the aspects of the present disclosure are not limited to the aspects set forth herein. The above and other aspects of the present disclosure will become more apparent to those skilled in the art to which the present disclosure pertains by referring to the detailed description of the present disclosure given below.

[0010] In an embodiment of the present disclosure, a display device includes: a substrate, including: a display area, the display area including an emission area and a non-emission area; and a non-display area; a light-emitting element, on the emission area of ​​the substrate; a pixel defining layer, located on the non-emission area of ​​the substrate and defining a first opening; a levee structure, located on the pixel defining layer and defining a second opening; a first encapsulation layer, on the light-emitting element and the levee structure; an auxiliary encapsulation layer, on the first encapsulation layer; a fluoride ion layer, on the non-display area of ​​the substrate; and a second encapsulation layer, on the auxiliary encapsulation layer and the fluoride ion layer, wherein the levee structure includes: a first levee layer, contacting the pixel defining layer; and a second levee layer, including a tip protruding toward the emission area than a side surface of the first levee layer, the first encapsulation layer and the auxiliary encapsulation layer overlap with the display area and do not overlap with the non-display area, and the fluoride ion layer does not overlap with the display area.

[0011] In an embodiment, the second encapsulation layer may include: a first organic layer contacting the auxiliary encapsulation layer; and a second organic layer contacting the fluoride ion layer.

[0012] In an embodiment, the spreading property of the first organic layer and the spreading property of the second organic layer may be different from each other.

[0013] In an embodiment, the spreadability of the first organic layer may be higher than the spreadability of the second organic layer.

[0014] In embodiments, the first organic layer and the second organic layer may be spaced apart from each other and may include the same material.

[0015] In an embodiment, the spreadability of the first organic layer may be controlled by the auxiliary encapsulation layer, and the spreadability of the second organic layer may be controlled by the fluoride ion layer.

[0016] In an embodiment, the second organic layer may be formed as a plurality of sheets in a plan view, and may have a circular shape or an elliptical shape in a plan view.

[0017] In an embodiment, the fluoride ion layer may include fluoride ions at the surface.

[0018] In an embodiment, the auxiliary encapsulation layer may include any one of silicon oxide and silicon oxynitride.

[0019] In an embodiment, the auxiliary encapsulation layer may have an oxygen content of 35% or more.

[0020] In an embodiment, the first opening may be completely surrounded by the second opening in a plan view.

[0021] In an embodiment, the display device may further include a third encapsulation layer on the second encapsulation layer, wherein the third encapsulation layer overlaps the non-display area to completely cover the second organic layer and the fluoride ion layer, and the third encapsulation layer overlaps the non-display area to contact the second organic layer and the fluoride ion layer.

[0022] In an embodiment, the display device may further include: a dam overlapping the non-display area and disposed between the substrate and the fluoride ion layer, wherein the fluoride ion layer covers the dam and contacts the dam.

[0023] In an embodiment of the present disclosure, a display device includes: a substrate including an emission area and a non-emission area; a pixel defining layer located on the non-emission area of ​​the substrate; a first embankment layer located on the pixel defining layer; a second embankment layer located on the first embankment layer and including a tip protruding toward the emission area; a first anode on the emission area of ​​the substrate; a first cathode located on the first anode and contacting the first embankment layer; a first encapsulation layer on the first cathode and the second embankment layer; and an auxiliary encapsulation layer on the first encapsulation layer, wherein the first encapsulation layer overlaps with the emission area to contact the first embankment layer, and the auxiliary encapsulation layer overlaps with the non-display area to contact the second embankment layer.

[0024] In an embodiment, the display device may further include: a second anode, separated from the first anode, and the pixel defining layer is interposed between the second anode and the first anode; and a second cathode, located on the second anode and contacting the first embankment layer, wherein the first cathode and the second cathode are electrically connected through the first embankment layer.

[0025] In an embodiment, the display device may further include: a first electrode pattern located on the second embankment layer, comprising the same material as the first cathode and separated from the first cathode; and a second electrode pattern located on the second embankment layer, comprising the same material as the second cathode and separated from the second cathode.

[0026] In an embodiment, the second embankment layer includes: a first portion contacting the first electrode pattern; a second portion contacting the second electrode pattern; and a third portion contacting the auxiliary encapsulation layer, wherein the first portion and the second portion are spaced apart from each other and the third portion is between the first portion and the second portion.

[0027] In an embodiment, the first encapsulation layer may include: a first inorganic layer covering the first cathode and the first electrode pattern; and a second inorganic layer covering the second cathode and the second electrode pattern, wherein the first inorganic layer and the second inorganic layer overlapping the non-emitting area are spaced apart from each other in a direction parallel to the substrate.

[0028] In an embodiment of the present disclosure, a method for manufacturing a display device includes: forming a substrate including a display area and a non-display area, wherein the display area includes an emission area and a non-emission area; forming an anode on the emission area of ​​the substrate and forming a sacrificial layer on the anode; forming a pixel defining material layer covering the sacrificial layer and the substrate, and forming a dam material layer completely covering the pixel defining material layer; forming a photoresist on the dam material layer; forming a hole exposing the sacrificial layer by removing the pixel defining material layer and the dam material layer in a portion overlapping with the anode through an etching process, and then forming a dam structure exposing the anode and including a tip protruding toward the emission area by removing the inner wall of the hole through an etching process; forming a light-emitting layer and a cathode on the substrate; forming a first encapsulation layer on the entire surface of the cathode, and then removing the light-emitting layer, the cathode and the first encapsulation layer located on the embankment structure except for the emission area and the portion around the emission area; forming an auxiliary encapsulation layer on the entire surface of the first encapsulation layer and the embankment structure to overlap with the display area and the non-display area, and then removing the auxiliary encapsulation layer in the portion overlapping with the non-display area by an etching process; and applying a second encapsulation layer on the auxiliary encapsulation layer to overlap with the display area and the non-display area, wherein, in the removal of the auxiliary encapsulation layer by the etching process, fluorine ions used in the etching process remain on the non-display area of ​​the substrate to form a fluorine ion layer.

[0029] In an embodiment, the fluoride ion layer does not overlap the display area and contacts the second encapsulation layer. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] These and / or other aspects will become apparent and more readily understood from the following description of the embodiments in conjunction with the accompanying drawings, in which:

[0031] Figure 1 is a schematic perspective view of an electronic device according to an embodiment;

[0032] Figure 2 is a perspective view of a display device included in an electronic device according to an embodiment;

[0033] Figure 3 yes Figure 2 A schematic cross-sectional view of a display device;

[0034] Figure 4 yes Figure 2 An enlarged plan view of area A in FIG.

[0035] Figure 5 It is along Figure 4 A schematic cross-sectional view of the display layer taken along line X1-X1';

[0036] Figure 6 Is set in Figure 5 A schematic enlarged cross-sectional view of a non-emitting region between a first emitting region and a second emitting region;

[0037] Figure 7 yes Figure 6 An enlarged cross-sectional view of region C in FIG.

[0038] Figure 8 yes Figure 5 An enlarged cross-sectional view of a region T in FIG.

[0039] Fig. 9 yes Figure 5 An enlarged plan view of the area T in FIG.

[0040] Fig.10 According to the embodiment Figure 2 An enlarged cross-sectional view of region A in FIG.

[0041] Fig.11 It is along Fig.10 A schematic cross-sectional view of the display area taken along line X3-X3'; and

[0042] Figures 12 to 22 It indicates providing (or manufacturing) Figure 5 A cross-sectional view of a method for displaying a device. DETAILED DESCRIPTION

[0043] The present invention will now be described more fully hereinafter with reference to the accompanying drawings, in which various embodiments are shown. However, the present invention may be implemented in many different forms and should not be construed as being limited to the embodiments set forth herein. Instead, these embodiments are provided so that this disclosure will be thorough and complete and will fully convey the scope of the invention to those skilled in the art.

[0044] Like reference numerals refer to like elements throughout.In the drawings and within the text of the present disclosure, reference numerals indicating an element in the singular may also be used to refer to plural singular elements.

[0045] It will be understood that when an element is referred to as being associated with another element (such as “on” another element), the element can be directly on the other element, or intervening elements can be present between the element and the other element. Conversely, when an element is referred to as being associated with another element (such as “directly on” another element), there are no intervening elements.

[0046] It will be understood that although the terms "first", "second", "third", etc. may be used herein to describe various elements, components, regions, layers and / or sections, these elements, components, regions, layers and / or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Therefore, without departing from the teachings herein, the first element, component, region, layer or section discussed below may be referred to as a second element, component, region, layer or section.

[0047] The terms used in this article are only for the purpose of describing specific embodiments and are not intended to be limiting. Unless the content clearly states otherwise, as used herein, the singular forms "one", "one (kind / person)" and "the (the)" are intended to include plural forms including "at least one (kind / person)". As used herein, the term "and / or" includes any combination and all combinations of one or more of the relevant listed items. It will also be understood that when used in this specification, the term "comprises and / or comprising" or "includes and / or including" indicates the presence of stated features, regions, wholes, steps, operations, elements and / or components, but does not exclude the presence or addition of one or more other features, regions, wholes, steps, operations, elements, components and / or their groups.

[0048] In addition, relative terms such as "lower" or "bottom" and "upper" or "top" may be used herein to describe the relationship of one element to another element as shown in the accompanying drawings. It will be understood that in addition to the orientation depicted in the accompanying drawings, relative terms are also intended to cover different orientations of the device. For example, if the device in one of the multiple drawings is turned over, the element described as being on the "lower" side of the other elements will then be oriented to be on the "upper" side of the other elements. Therefore, the term "lower" can cover both "lower" and "upper" orientations depending on the specific orientation of the drawings. Similarly, if the device in one of the multiple drawings is turned over, the element described as being "below" or "below" the other elements will then be oriented to be "above" the other elements. Therefore, the term "below" or "below" can cover both upper and lower orientations.

[0049] As used herein, "about" or "approximately" includes the stated value and means within the range of acceptable deviations for the particular value determined by one of ordinary skill in the art, taking into account the measurement in question and the errors associated with the measurement of a particular quantity (i.e., the limitations of the measurement system). For example, "about" can mean within one or more standard deviations, or within ±30%, ±20%, ±10%, or ±5% of the stated value.

[0050] Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by those of ordinary skill in the art to which the present disclosure belongs. It will also be understood that, unless explicitly defined as such herein, terms (such as those defined in general dictionaries) should be interpreted as having a meaning consistent with their meaning in the context of the relevant art and the present disclosure, and will not be interpreted in an idealized or overly formal sense.

[0051] Hereinafter, illustrative embodiments will be described with reference to the accompanying drawings.

[0052] Figure 1 is a schematic perspective view of an electronic device 1 according to the embodiment.

[0053] refer to Figure 1 , the electronic device 1 displays a moving image or a still image. The electronic device 1 may refer to any electronic device that provides a display screen at which an image is displayed or an image is visible from the outside of the electronic device 1. Examples of the electronic device 1 may include a television, a notebook computer, a monitor, a billboard, an Internet of Things (IoT) device, a mobile phone, a smart phone, a tablet personal computer (PC), an electronic watch, a smart watch, a watch phone, a head-mounted display, a mobile communication terminal, an electronic notebook, an electronic book, a portable multimedia player (PMP), a navigation device, a game console, a digital camera, and a video camera, all of which can provide a display screen.

[0054] exist Figure 1In the figure, a first direction (X-axis direction), a second direction (Y-axis direction) and a third direction (Z-axis direction) are defined. A plane can be defined by two directions that cross or intersect each other. The first direction (X-axis direction) and the second direction (Y-axis direction) can be perpendicular to each other, the first direction (X-axis direction) and the third direction (Z-axis direction) can be perpendicular to each other, and the second direction (Y-axis direction) and the third direction (Z-axis direction) can be perpendicular to each other, without being limited thereto. It can be understood that the first direction (X-axis direction) refers to the horizontal direction along the plane of the drawing, the second direction (Y-axis direction) refers to the vertical direction along the plane of the drawing, and the third direction (Z-axis direction) refers to the up and down direction (i.e., thickness direction) entering the plane of the drawing. In the following description, unless otherwise specified, "direction" may refer to two directions extending to opposite sides along their respective directions. In addition, when it is necessary to distinguish opposite "directions" extending to opposite sides, one side will be referred to as "the first side in that direction" and the other side will be referred to as "the second side in that direction". Based on Figure 1 , the direction pointed by the arrow will be referred to as a first side, and the direction opposite to the direction will be referred to as a second side.

[0055] In the following, for ease of description, when referring to the surface of the electronic device 1 or each component constituting the electronic device 1, a surface facing the first side in the direction of displaying an image (i.e., in the third direction (Z-axis direction)) will be referred to as an upper surface, and the other surface opposite to the one surface will be referred to as a lower surface. However, the present disclosure is not limited to this, and one surface and the other surface of each component may be referred to as a front surface and a rear surface or a first surface and a second surface, respectively. In addition, when describing the relative positions of the components of the electronic device 1, the first side in the third direction (Z-axis direction) may be referred to as an upper side, and the second side in the third direction (Z-axis direction) may be referred to as a lower side.

[0056] The planar shape of the electronic device 1 may be modified variously. For example, the electronic device 1 may have various shapes in a plan view (or plane view), such as a horizontally long rectangle, a vertically long rectangle, a square, a quadrilateral with rounded corners (vertices), other polygons, and a circle.

[0057] The electronic device 1 may include a display area DA and a non-display area NDA adjacent to the display area DA. A boundary may be defined between the display area DA and the non-display area NDA. The display area DA is an area in which a screen (e.g., a display screen) is defined and / or an image may be displayed thereat (e.g., a planar area), and the non-display area NDA is an area in which a display screen is not defined and / or an image is not displayed. The display area DA may also be referred to as an active area, and the non-display area NDA may also be referred to as an inactive area. The display area DA may generally occupy the center of the electronic device 1, i.e., spaced apart from the outer edges of the electronic device 1.

[0058] Figure 2 According to an embodiment, the electronic device 1 (see Figure 1 ) is a perspective view of the display device 10 in FIG.

[0059] refer to Figure 2 , the electronic device 1 according to the embodiment may include a display device 10. The display device 10 may provide a screen defined by the electronic device 1 (e.g., a display screen at which an image is displayed). The display device 10 may be, for example, an inorganic light emitting diode display device, an organic light emitting display device, a quantum dot light emitting display device, a plasma display device, or a field emission display device. The following will describe a case where an organic light emitting diode display device is applied as an example of the display device 10, but the present disclosure is not limited to this case, and other display devices may also be applied as long as the same technical spirit is applicable.

[0060] The planar shape of the display device 10 may be similar to the planar shape of the electronic device 1. For example, the planar shape of the display device 10 may be similar to a rectangle having short sides in a first direction (X-axis direction) and long sides in a second direction (Y-axis direction). Each corner where the short side extending in the first direction (X-axis direction) intersects the long side extending in the second direction (Y-axis direction) may be rounded with a predetermined curvature. However, the present disclosure is not limited thereto, and each corner may also be a right angle. The planar shape of the display device 10 is not limited to a quadrilateral shape, but may also be similar to another polygonal shape, a circular shape, or an elliptical shape.

[0061] The display device 10 may include a display panel 100 , a display driver 200 , a circuit board 300 , and a touch driver 400 .

[0062] The display panel 100 may include a main area MA and a sub-area SBA adjacent to one side of the main area MA and extending from one side of the main area MA. The main area MA may include a display area DA including pixels PX for displaying an image, generating light, etc. (see FIG. Figure 4), the non-display area NDA extends along the display area DA, such as being disposed around the display area DA in a plan view.

[0063] The display area DA may be selected from a plurality of emission areas EA (eg, a light emission area provided as a plurality including a plurality of light emission areas) to be described later (see Figure 4 ) emits light. For example, the display panel 100 may include a pixel defining layer 151 (see Figure 5 ) and the light emitting element ED (see Figure 5 ).

[0064] The non-display area NDA may be an area outside the display area DA (ie, closer to the outer edge of the electronic device 1 (or display device 10 ) than the display area DA). The non-display area NDA may be defined as an edge area of ​​the main area MA of the display panel 100 .

[0065] The sub-region SBA may be a region extending from one side of the main region MA. The display panel 100 (or the display device 10) may be bent at the sub-region SBA as a bending region. The sub-region SBA may include a flexible material that can be bent, folded, curled, etc. For example, when the display device 10 is bent at the sub-region SBA, the sub-region SBA may overlap with the main region MA in the thickness direction (third direction (Z-axis direction)). The sub-region SBA may include a display driver 200 and a pad unit (not shown), and the display device 10 is connected to the circuit board 300 at the pad unit. In an embodiment, the sub-region SBA may be omitted, and the display driver 200 may be located in the non-display area NDA of the main region MA.

[0066] The display driver 200 may output signals and voltages for driving the display panel 100. The display driver 200 may be connected to the display area DA of the display panel 100, such as to the pixel PX. The display driver 200 may be provided (or formed) as an integrated circuit and mounted on the display panel 100 using a chip on glass (COG) method, a chip on plastic (COP) method, or an ultrasonic bonding method. For example, the display driver 200 may be disposed in the sub-area SBA and may overlap with the main area MA in the thickness direction by bending the sub-area SBA. For another example, the display driver 200 may be mounted on the circuit board 300.

[0067] The circuit board 300 outside the display panel 100 may be attached to the pad unit of the display panel 100 using an anisotropic conductive film. The circuit board 300 may be a flexible printed circuit board, a printed circuit board, or a flexible film such as a chip on film.

[0068] The touch driver 400 may be mounted on the circuit board 300. The touch driver 400 may be connected to the touch sensor layer 180 (see FIG. 1 ) of the display panel 100. Figure 3 ). The touch driver 400 may be formed as an integrated circuit.

[0069] Figure 3 yes Figure 2 Schematic cross-sectional view of a display device 10 .

[0070] refer to Figure 3 , the display panel 100 may include a display layer DPL, a touch sensor layer 180, and a color filter layer 190. The display layer DPL (e.g., an image display layer) that generates light, generates an image, etc. may include a substrate 110, a thin film transistor layer 130 as a circuit layer, a display element layer 150, and a thin film encapsulation layer 170 as an encapsulation layer.

[0071] The substrate 110 may be a base substrate or a base member. The substrate 110 may be a flexible substrate that can be bent, folded, curled, etc. For example, the substrate 110 may include a polymer resin such as polyimide (PI). However, the present disclosure is not limited thereto. In an embodiment, the substrate 110 may include a glass material or a metal material.

[0072] The thin film transistor layer 130 may be disposed on the substrate 110. The thin film transistor layer 130 may be disposed in the display area DA, the non-display area NDA, and the sub-area SBA. The thin film transistor layer 130 may include a pixel PX (see FIG. 1 ). Figure 4 ) of the components within the plurality of thin film transistors TFT (see Figure 5 ).

[0073] The display element layer 150 may be disposed on the thin film transistor layer 130 and electrically connected to the thin film transistor layer 130. The display element layer 150 may overlap the display area DA. The display element layer 150 may include a plurality of light emitting elements ED (see FIG. Figure 5 ). For example, each of the plurality of light emitting elements ED of the embodiment may include (but is not limited to) at least one of an organic light emitting diode including an organic light emitting layer, a quantum dot light emitting diode including a quantum dot light emitting layer, an inorganic light emitting diode including an inorganic semiconductor, and a micro light emitting diode.

[0074] The thin film encapsulation layer 170 may be located on the display element layer 150. The thin film encapsulation layer 170 may overlap the display area DA and the non-display area NDA. The thin film encapsulation layer 170 may cover the upper surface and the side surface of the display element layer 150, and may protect the display element layer 150 from external oxygen and moisture. The thin film encapsulation layer 170 may expose the bending area (e.g., the sub-area SBA) to the outside of the thin film encapsulation layer 170. The thin film encapsulation layer 170 may include at least one inorganic layer and at least one organic layer to encapsulate the display element layer 150.

[0075] The touch sensor layer 180 may be disposed on the thin film encapsulation layer 170. The touch sensor layer 180 may overlap the display area DA and the non-display area NDA. The touch sensor layer 180 may sense an external input such as a user's touch using a mutual capacitance method or a self capacitance method.

[0076] The color filter layer 190 may be disposed on the touch sensor layer 180. The color filter layer 190 may overlap the display area DA and the non-display area NDA. The color filter layer 190 may reduce reflected light caused by external light by absorbing some of the light incident from the outside of the display device 10. Therefore, the color filter layer 190 may prevent color distortion caused by reflection of external light.

[0077] In an embodiment, since the color filter layer 190 is directly disposed on the touch sensor layer 180, the display device 10 may not require a separate substrate for the color filter layer 190. Therefore, the thickness of the display device 10 may be relatively small. In addition, according to an embodiment, the color filter layer 190 may be omitted.

[0078] like Figure 3 As shown in , the portion of the display layer DPL overlapping the sub-area SBA may be bendable (such as bendable). When a portion of the display layer DPL is bent, the display driver 200, the circuit board 300, and the touch driver 400 may overlap the main area MA in the third direction (Z-axis direction).

[0079] Figure 4 yes Figure 2 An enlarged plan view of area A in FIG.

[0080] refer to Figure 4 The display area DA may include an emission area EA (eg, a light emission area) and a non-emission area NLA (eg, a non-light emission area). The emission area EA may include a first emission area EA1, a second emission area EA2, and a third emission area EA3 that emit light of different colors.

[0081] The non-emission area NLA may be adjacent to each of the first to third emission areas EA1 to EA3 (such as surrounding each of the first to third emission areas EA1 to EA3). The non-emission area NLA may block light emitted from each of the first to third emission areas EA1 to EA3 to define a light blocking area. Therefore, the non-emission area NLA may help prevent color mixing of light emitted from the first to third emission areas EA1 to EA3 at areas between the respective light emission areas.

[0082] The first to third emission areas EA1 to EA3 may emit red light, green light, and blue light, respectively. The color of light emitted from each of the first to third emission areas EA1 to EA3 may be determined according to the light emitting element ED (see FIG. 1 ) overlapping the first, second, or third emission areas EA1, EA2, or EA3. Figure 5 In an embodiment, the first emission area EA1 may emit red light (i.e., light of the first color), the second emission area EA2 may emit green light (i.e., light of the second color), and the third emission area EA3 may emit blue light (i.e., light of the third color), but the present disclosure is not limited thereto.

[0083] The first to third emission areas EA1 to EA3 may be formed by the display panel 100 (see Figure 2 ) is defined by the first opening OP1 and the second opening OP2 of each layer. For example, the first opening OP1 may be formed by a pixel defining layer 151 (hereinafter, inorganic pixel defining layer 151) as an inorganic material layer to be described later (see Figure 5 ) and the second opening OP2 may be formed by a bank structure 160 (see Figure 5 In a plan view, a boundary or edge of the second opening OP2 may completely surround a boundary or edge of the first opening OP1.

[0084] In some embodiments, at least one first emission region EA1, at least one second emission region EA2, and at least one third emission region EA3 disposed adjacent to each other may form a pixel group PXG. The pixel group PXG may be the smallest unit emitting white light. However, the types and / or quantities of the first emission region EA1 to the third emission region EA3 constituting the pixel group PXG may vary according to the embodiment.

[0085] Figure 5 It is along Figure 4Schematic cross-sectional view of the display layer DPL taken along line X1-X1' of FIG. Schematic cross-sectional view of the display layer DPL of the embodiment of the present invention shows the cross-section of the substrate 110, the thin film transistor layer 130, the display element layer 150 and the thin film encapsulation layer 170. Since the substrate 110 has been mentioned, its redundant description will be omitted.

[0086] refer to Figure 5 , the thin film transistor layer 130 may be located on the substrate 110. The thin film transistor layer 130 may include a first buffer layer 111, a thin film transistor TFT, a gate insulating layer 113, a first interlayer insulating layer 121, a capacitor electrode CPE, a second interlayer insulating layer 123, a first connection electrode CNE1, a first via layer 125, a second connection electrode CNE2, and a second via layer 127.

[0087] The first buffer layer 111 may be disposed on the substrate 110. The first buffer layer 111 may be disposed in a portion overlapping the display area DA and the non-display area NDA. The first buffer layer 111 may include an inorganic layer that may prevent air or moisture from penetrating. For example, the first buffer layer 111 may include a plurality of inorganic layers alternately stacked.

[0088] The thin film transistor TFT may be disposed on the first buffer layer 111 and may constitute a pixel circuit respectively connected to a plurality of light emitting elements ED. The thin film transistor TFT may be disposed in a portion overlapping with the display area DA. For example, each of the plurality of thin film transistors TFT may be a driving transistor or a switching transistor of a pixel circuit. Each of the plurality of thin film transistors TFT may include an active layer ACT, a source electrode SE, a drain electrode DE, and a gate electrode GE.

[0089] The active layer ACT may be disposed on the first buffer layer 111. The active layer ACT may overlap the gate electrode GE in the third direction (Z-axis direction) and may be insulated from the gate electrode GE by the gate insulating layer 113. The material of the active layer ACT may be made conductive in a portion of the active layer ACT to form a source electrode SE and a drain electrode DE.

[0090] The gate electrode GE may be disposed on the gate insulating layer 113. The gate electrode GE may overlap the active layer ACT with the gate insulating layer 113 interposed therebetween.

[0091] The gate insulating layer 113 may be disposed on the active layer ACT. The gate insulating layer 113 may be disposed in a portion overlapping the display area DA and the non-display area NDA. The gate insulating layer 113 may cover the active layer ACT and the first buffer layer 111, and may insulate the active layer ACT from the gate electrode GE. The gate insulating layer 113 may include a contact hole through which the first connection electrode CNE1 passes.

[0092] The first interlayer insulating layer 121 may cover the gate electrode GE and the gate insulating layer 113. The first interlayer insulating layer 121 may be disposed in a portion overlapping the display area DA and the non-display area NDA. The first interlayer insulating layer 121 may include a contact hole through which the first connection electrode CNE1 passes (or a contact hole through which the first connection electrode CNE1 passes is defined). The contact hole of the first interlayer insulating layer 121 may be connected to the contact hole of the gate insulating layer 113 and the contact hole of the second interlayer insulating layer 123. As used herein, for ease of explanation, more than one layer among a plurality of layers sequentially stacked in the thickness direction from the first buffer layer 111 to the second via layer 127 may be referred to as an "insulating layer".

[0093] The capacitor electrode CPE may be disposed on the first interlayer insulating layer 121. The capacitor electrode CPE may overlap the gate electrode GE in the third direction (Z-axis direction). The capacitor electrode CPE and the gate electrode GE may form a capacitance.

[0094] The second interlayer insulating layer 123 may cover the capacitor electrode CPE and the first interlayer insulating layer 121. The second interlayer insulating layer 123 may be disposed in a portion overlapping the display area DA and the non-display area NDA. The second interlayer insulating layer 123 may include a contact hole through which the first connection electrode CNE1 passes in a portion overlapping the display area DA. The contact hole of the second interlayer insulating layer 123 may be connected to the contact hole of the first interlayer insulating layer 121 and the contact hole of the gate insulating layer 113.

[0095] The first connection electrode CNE1 may be disposed on the second interlayer insulating layer 123. The first connection electrode CNE1 may electrically connect the drain electrode DE of the thin film transistor TFT to the second connection electrode CNE2. The first connection electrode CNE1 may be inserted into (or extend through) a contact hole formed in the first interlayer insulating layer 121, the second interlayer insulating layer 123, and the gate insulating layer 113 to contact the drain electrode DE of the thin film transistor TFT.

[0096] The first via layer 125 may cover the first connection electrode CNE1 and the second interlayer insulating layer 123. The first via layer 125 may be disposed in a portion overlapping the display area DA and the non-display area NDA. The first via layer 125 may planarize a structure thereunder. The first via layer 125 may include a contact hole through which the second connection electrode CNE2 passes in a portion overlapping the display area DA.

[0097] The second connection electrode CNE2 may be disposed on the first via layer 125. The second connection electrode CNE2 may be inserted into a contact hole formed in the first via layer 125 to contact the first connection electrode CNE1. The second connection electrode CNE2 may electrically connect the first connection electrode CNE1 to the anode AE. When in contact, the elements may be in physical contact (such as an interface may be formed between the elements).

[0098] The second via layer 127 may cover the second connection electrode CNE2 and the first via layer 125. The second via layer 127 may be disposed in a portion overlapping the display area DA and the non-display area NDA. The second via layer 127 may include a contact hole through which the anode AE ​​passes in a portion overlapping the display area DA.

[0099] The display element layer 150 may be disposed on the second via layer 127. The display element layer 150 of the embodiment may include a light emitting element ED, an inorganic pixel defining layer 151, a residual pattern 153, and a bank structure 160.

[0100] Each of the plurality of light emitting elements ED may include an anode AE, a light emitting layer EL, and a cathode CE. The light emitting element ED may include a first light emitting element ED1 disposed in a first emission area EA1 and a second light emitting element ED2 disposed in a second emission area EA2. For example, the first light emitting element ED1 may emit red light, and the second light emitting element ED2 may emit green light, but the present disclosure is not limited thereto.

[0101] The anode AE ​​may be disposed on the second via layer 127. The anode AE ​​may be electrically connected to the drain electrode DE of the thin film transistor TFT through the first connection electrode CNE1 and the second connection electrode CNE2.

[0102] The anode AE ​​may include a first anode AE1 disposed in the first emission area EA1 and a second anode AE2 disposed in the second emission area EA2. The first anode AE1 and the second anode AE2 may be spaced apart from each other on (or along) the second via layer 127.

[0103] In an embodiment, the anode AE ​​may have a material such as indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), or indium oxide (In 2 O 3 ) and a layer of a reflective material such as silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), lead (Pb), palladium (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca), or a mixture thereof. For example, the anode AE ​​may have (but is not limited to) ITO / Mg, ITO / MgF2 , ITO / Ag or ITO / Ag / ITO multilayer structure.

[0104] The inorganic pixel defining layer 151 may be located on the second via layer 127 and the anode AE. The inorganic pixel defining layer 151 may separate and insulate the first anode AE1 and the second anode AE2 from each other. The inorganic pixel defining layer 151 of the embodiment may define a first opening OP1. Here, the sidewall (or side surface) of the pixel defining layer 151 may define the first opening OP1. The inorganic pixel defining layer 151 may be disposed on the entire surface of the second via layer 127, but the upper surface of the anode AE ​​may be partially exposed to the outside of the pixel defining layer 151. In other words, the inorganic pixel defining layer 151 may expose the anode AE ​​in a portion overlapping with the first opening OP1, and the light emitting layer EL may be directly disposed on the anode AE ​​in a portion overlapping with the first opening OP1.

[0105] In some embodiments, a solid portion of the inorganic pixel defining layer 151 adjacent to the non-display area NDA and closest to the non-display area NDA may be disposed adjacent to the power line V1. The power line V1 may transmit power from the display driver 200 (see Figure 3 ) receives a power supply voltage which is supplied to the first light-emitting element ED1 and the second light-emitting element ED2.

[0106] The inorganic pixel defining layer 151 may include an inorganic insulating material, for example, aluminum oxide, titanium oxide, tantalum oxide, hafnium oxide, zinc oxide, silicon oxide, silicon nitride, or silicon oxynitride.

[0107] The embankment structure 160 may be located on the inorganic pixel defining layer 151. The embankment structure 160 may be disposed in a portion overlapping the non-emission area NLA. That is, the solid material portion of the embankment structure 160 may correspond to the non-emission area NLA. The embankment structure 160 of the embodiment may include a first embankment layer 161 and a second embankment layer 163 disposed on the inorganic pixel defining layer 151. The embankment structure 160 may have a structure in which the first embankment layer 161 and the second embankment layer 163 are sequentially stacked in a third direction (Z-axis direction). The first embankment layer 161 and the second embankment layer 163 may include different conductive materials. The first embankment layer 161 and the second embankment layer 163 may together define the embankment of the embankment structure 160 (i.e., the solid portion of the embankment opening of the collective embankment layer defining the collective embankment layer).

[0108] The embankment structure 160 may include (or define) a tip TIP protruding toward the emission area EA. The inner side wall or inner side surface of the embankment may define the respective emission areas EA. In the display device 10 of the embodiment, since the embankment structure 160 includes the tip TIP, in the process of manufacturing the display device 10, a pattern of the first light-emitting element ED1 and a pattern of the second light-emitting element ED2 respectively overlapping the first emission area EA1 and the second emission area EA2 may be provided (or formed) without a fine metal mask. The manufacturing process will be described later.

[0109] The bank structure 160 of the embodiment may define a second opening OP2. The emission area EA of the embodiment may be defined by or correspond to the second opening OP2. Specifically, the second bank layer 163 as an upper thickness portion of the bank of the embodiment may define the second opening OP2.

[0110] A plurality of light-emitting layers EL may be disposed on a plurality of anodes AE, respectively. The light-emitting layer EL may be an organic light-emitting layer or an organic light-emitting pattern made of (or including) an organic material, and may be formed on the anode AE ​​by a deposition process. When the thin film transistor TFT applies a predetermined voltage to the anode AE ​​and the cathode CE receives a common voltage or a cathode voltage, holes and electrons may move to the light-emitting layer EL through the hole transport layer and the electron transport layer, respectively, and may be combined with each other in the light-emitting layer EL to emit light at each emission area EA.

[0111] The light emitting layer EL may include a first light emitting layer EL1 disposed in the first emission region EA1 and a second light emitting layer EL2 disposed in the second emission region EA2. For example, the first light emitting layer EL1 may emit red light and the second light emitting layer EL2 may emit green light, but the present disclosure is not limited thereto.

[0112] In some embodiments, the anode AE ​​may be spaced apart from the inorganic pixel defining layer 151 in the third direction (Z-axis direction) to define a gap, or a space between facing surfaces of the anode AE ​​may be spaced apart from the inorganic pixel defining layer 151. A residual pattern 153 may be located in the space between the anode AE ​​and the inorganic pixel defining layer 151. The residual pattern 153 will be described later.

[0113] The cathode CE may be disposed on the light emitting layer EL. The cathode CE may include a transparent conductive material to transmit light generated from the light emitting layer EL. The cathode CE may receive a common voltage or a low potential voltage. When the anode AE ​​receives a voltage corresponding to the data voltage and the cathode CE receives a low potential voltage, a potential difference may be formed between the anode AE ​​and the cathode CE. Therefore, the light emitting layer EL may emit light.

[0114] In an embodiment, the cathode CE may include a material having a composition such as Li, Ca, LiF, Al, Mg, Ag, Pt, Pd, Ni, Au, Nd, Ir, Cr, BaF 2 The cathode CE may further include a layer of a material having a small work function, such as Ba, Ba or a compound or combination thereof (e.g., a mixture of Ag and Mg), or a material having a multilayer structure such as LiF / Ca or LiF / Al. The cathode CE may further include a transparent metal oxide layer disposed on the layer of the material having a small work function.

[0115] The cathode CE may include a first cathode CE1 disposed in the first emission area EA1 and a second cathode CE2 disposed in the second emission area EA2. The first cathode CE1 may be disposed on the first light emitting layer EL1 in the first emission area EA1, and the second cathode CE2 may be disposed on the second light emitting layer EL2 in the second emission area EA2.

[0116] The first cathode CE1 and the second cathode CE2 may not be directly connected to each other but may be electrically connected to each other through the first bank layer 161. In other words, the cathodes CE as discrete patterns separated from each other may be connected to the display driver 200 (see FIG. 1 ) through the power line V1 and the first bank layer 161. Figure 3 ) receives a power supply voltage, and the first cathode CE1 and the second cathode CE2 may be electrically connected to each other through the first bank layer 161.

[0117] The first organic pattern ELP1 and the second organic pattern ELP2 may be located on the embankment structure 160. In a plan view, the first organic pattern ELP1 and the second organic pattern ELP2 may surround the first opening OP1. The first organic pattern ELP1 and the second organic pattern ELP2 may include the same material as the first light emitting layer EL1 and the second light emitting layer EL2, respectively. The first organic pattern ELP1 and the second organic pattern ELP2 may be traces of a material formed when an organic material layer for forming the first light emitting layer EL1 and the second light emitting layer EL2 is separated by a tip TIP included in the embankment structure 160 or separated at a tip TIP included in the embankment structure 160.

[0118] Here, the first organic pattern ELP1, the second organic pattern ELP2, the first light-emitting layer EL1, and the second light-emitting layer EL2 may be in the same layer as each other. Since in the same layer, the elements may be formed in the same process and / or include the same material as each other, the elements may be respective parts of the same material layer, and the elements may be on the same layer by forming an interface with the same lower layer or the same upper layer, etc., without being limited thereto.

[0119] The first electrode pattern CEP1 and the second electrode pattern CEP2 may be disposed on the first organic pattern ELP1 and the second organic pattern ELP2, respectively. The arrangement relationship between the first electrode pattern CEP1 and the second electrode pattern CEP2 and the first organic pattern ELP1 and the second organic pattern ELP2 may be the same as the arrangement relationship between the first light emitting layer EL1 and the second light emitting layer EL2 and the first cathode CE1 and the second cathode CE2. The first electrode pattern CEP1 and the second electrode pattern CEP2 may include the same material as the first cathode CE1 and the second cathode CE2, respectively, so as to be in the same layer as each other. The first electrode pattern CEP1 and the second electrode pattern CEP2 may be traces formed when the first cathode CE1 and the second cathode CE2 are separated by the tip TIP included in the embankment structure 160. In an embodiment, the conductive pattern layer includes the first cathode CE1 and the second cathode CE2 in the respective emission areas EA and the first electrode pattern CEP1 on the embankment and spaced apart from the first cathode CE1 and the second electrode pattern CEP2 on the embankment and spaced apart from the second cathode CE2 in the non-emission area NLA.

[0120] The thin film encapsulation layer 170 may be disposed on the display element layer 150. The thin film encapsulation layer 170 may include a first encapsulation layer 171, an auxiliary encapsulation layer 172, a second encapsulation layer 173, and a third encapsulation layer 175 stacked sequentially. The first encapsulation layer 171, the auxiliary encapsulation layer 172, and the third encapsulation layer 175 may be inorganic encapsulation layers, and the second encapsulation layer 173 may be an organic encapsulation layer.

[0121] The first encapsulation layer 171 of the embodiment may be disposed in a portion overlapping the display area DA. In other words, the first encapsulation layer 171 of the embodiment may not overlap the non-display area NDA. Due to the non-overlap, the elements may be adjacent to each other and / or spaced apart from each other in a planar direction (such as along an XY plane). The first encapsulation layer 171 may protect the light emitting element ED from moisture and oxygen.

[0122] The first encapsulation layer 171 of the embodiment may include a first inorganic layer 171-1 and a second inorganic layer 171-2. The first inorganic layer 171-1 and the second inorganic layer 171-2 may be located in portions overlapping the first emission area EA1 and the second emission area EA2, respectively. For example, the first inorganic layer 171-1 may cover the first light emitting element ED1 and the first electrode pattern CEP1, and the second inorganic layer 171-2 may cover the second light emitting element ED2 and the second electrode pattern CEP2. The first inorganic layer 171-1 and the second inorganic layer 171-2 may be spaced apart from each other in the first direction (X-axis direction) in the portion overlapping the non-emission area NLA. Although in Figure 5, the spacing along the X-axis direction is shown, but the spacing may also be defined along the Y-axis direction or various directions within the XY plane.

[0123] Although the first inorganic layer 171-1 and the second inorganic layer 171-2 are formed on the same layer in the drawings, they may be formed in different processes. For example, the first inorganic layer 171-1 may be formed after forming the first cathode CE1, and the second inorganic layer 171-2 may be formed after forming the second cathode CE2. The manufacturing process will be described later.

[0124] The first encapsulation layer 171 may include one or more inorganic insulating materials. The inorganic insulating material may include aluminum oxide (Al 2 O 3 ), titanium oxide (Ti 2 O 3 ), Tantalum Oxide (Ta 2 O 5 ), hafnium oxide (HfO 2 )、zinc oxide (ZnO), silicon oxide (SiO 2 ), silicon nitride (Si 3 N 4 ) and silicon oxynitride (Si 2 N 2 O).

[0125] The auxiliary encapsulation layer 172 of the embodiment may be disposed in a portion overlapping the display area DA. In other words, the auxiliary encapsulation layer 172 of the embodiment may not overlap the non-display area NDA. The auxiliary encapsulation layer 172 may improve the spreadability of the material forming the second encapsulation layer 173 in one or more planar directions along the display element layer 150. That is, the auxiliary encapsulation layer 172 may help the second encapsulation layer 173 to have high spreadability in the process of providing the encapsulation layer.

[0126] The auxiliary encapsulation layer 172 may include an inorganic insulating material containing oxygen ions. For example, the auxiliary encapsulation layer 172 may include silicon oxide (SiO 2 ) and silicon oxynitride (Si 2 N 2 When measured by Fourier transform infrared spectroscopy, the oxygen ion content of the auxiliary encapsulation layer 172 may be about 35% or more.

[0127] The second encapsulation layer 173 of the embodiment may overlap the display area DA and the non-display area NDA. The second encapsulation layer 173 of the embodiment may include a first organic layer 173A overlapping the display area DA and a second organic layer 173B overlapping the non-display area NDA. The first organic layer 173A and the second organic layer 173B may be spaced apart from each other in one direction along the display element layer 150, and the spreading property of the material used to form the first organic layer 173A and the second organic layer 173B may be adjusted according to a structure disposed below the first organic layer 173A and the second organic layer 173B and in contact with the first organic layer 173A and the second organic layer 173B. In an embodiment, the material of each of the first organic layer 173A and the second organic layer 173B has spreading property relative to the flow control layer (auxiliary encapsulation layer 172 and fluoride ion layer FL), and the spreading property of the material of the first organic layer 173A and the spreading property of the material of the second organic layer 173B may be different from each other. The spreading property of the material of the first organic layer 173A may be higher than the spreading property of the material of the second organic layer 173B. In the case where the first organic layer 173A and the second organic layer 173B are respective parts of the same material layer, the spreadability of the material of the first organic layer 173A is defined by the contact of the material of the first organic layer 173A along the auxiliary encapsulation layer 172, and the spreadability of the material of the second organic layer 173B is defined by the contact of the material of the second organic layer 173B along the fluoride ion layer FL.

[0128] For example, the first organic layer 173A may be disposed on the auxiliary encapsulation layer 172 and may contact the auxiliary encapsulation layer 172. The first organic layer 173A may have higher spreading property than the second organic layer 173B. Therefore, the first organic layer 173A may fill and planarize a step of a structure disposed under and overlapping the first organic layer 173A.

[0129] The second organic layer 173B may be disposed on the fluoride ion layer FL and may contact the fluoride ion layer FL. The spreading property of the second organic layer 173B may be lower than that of the first organic layer 173A, and the second organic layer 173B may be formed in the form of a plurality of planar shapes (e.g., a plurality of circular shapes or a plurality of substantially elliptical shapes) spaced apart from each other in a plan view. That is, the second organic layer 173B may be defined by protrusions arranged along the pattern of the fluoride ion layer FL. The protrusions may be discrete patterns spaced apart from each other along the plane of the fluoride ion layer FL.

[0130] The fluoride ion layer FL may be disposed on the second via layer 127 in a portion overlapping the non-display area NDA, and may include fluoride ions at a surface of the fluoride ion layer FL. Here, the fluoride ions may be exposed outside the fluoride ion layer FL. The fluoride ion layer FL may be flat (such as extending in a single plane). The upper surface of the fluoride ion layer FL may be flat.

[0131] The second encapsulation layer 173 may include a polymer material. Examples of polymer materials may include acrylic resin, epoxy resin, polyimide, and polyethylene. For example, the second encapsulation layer 173 may include an acrylic resin such as polymethyl methacrylate or polyacrylic acid. The second encapsulation layer 173 may be formed by curing a monomer or applying a polymer.

[0132] The third encapsulation layer 175 may be disposed in a portion overlapping the display area DA and the non-display area NDA. The third encapsulation layer 175 may completely cover the first organic layer 173A and the second organic layer 173B of the second encapsulation layer 173. The third encapsulation layer 175 may be disposed in the display area DA, and extend from the display area DA to be disposed in the non-display area NDA, and completely cover the discrete pattern forming the second organic layer 173B in the non-display area NDA. The third encapsulation layer 175 may protect the display element layer 150 from oxygen and moisture.

[0133] Figure 6 Is set in Figure 5 Schematic enlarged cross-sectional view of a non-emission area NLA between the first emission area EA1 and the second emission area EA2 in FIG.

[0134] refer to Figure 6 In an embodiment, the first emission area EA1 and the second emission area EA2 may be spaced apart from each other, and the non-emission area NLA is interposed between the first emission area EA1 and the second emission area EA2. As described above, in an embodiment, the first opening OP1 may be defined by the inorganic pixel defining layer 151, and the second opening OP2 may be defined by the second bank layer 163.

[0135] The first bank layer 161 of the embodiment of the bank may be disposed on the inorganic pixel defining layer 151 to contact the inorganic pixel defining layer 151. The first bank layer 161 of the embodiment may include a material having excellent electrical conductivity. Therefore, the first bank layer 161 may electrically connect the first cathode CE1 and the second cathode CE2, which are spaced apart from each other and respectively disposed in the first emission area EA1 and the second emission area EA2, to each other. For example, the first bank layer 161 may include at least one of aluminum (Al) and copper (Cu).

[0136] In some embodiments, the first bank layer 161 may include a first side surface 1a facing the first emission area EA1 and a second side surface 1b facing the second emission area EA2. At the emission area EA, the first side surface 1a of the first bank layer 161 may be recessed toward the second side in the first direction (X-axis direction) than the sidewall of the inorganic pixel defining layer 151, and the second side surface 1b of the first bank layer 161 may be recessed toward the first side in the first direction (X-axis direction) than the sidewall of the inorganic pixel defining layer 151. This may be due to the fact that the first bank layer 161 of the embodiment includes a material having an etching rate relatively higher than that of the inorganic pixel defining layer 151. That is, the sidewall of the bank at the first bank layer 161 may be recessed from the sidewall of the inorganic pixel defining layer 151 to define an exposed portion of the inorganic pixel defining layer 151 exposed to the bank opening.

[0137] In an embodiment, within the emission area EA, the first light emitting layer EL1, the first cathode CE1, and the first inorganic layer 171-1 may contact the first side surface 1a, and the second light emitting layer EL2, the second cathode CE2, and the second inorganic layer 171-2 may contact the second side surface 1b.

[0138] The second bank layer 163 of the embodiment of the bank may be disposed on the first bank layer 161 to contact the first bank layer 161. The second bank layer 163 of the embodiment may include a metal material having high electrical stability and high adhesion to metal. For example, the second bank layer 163 may include any one of molybdenum (Mo), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), and neodymium (Nd), or an alloy thereof.

[0139] In some embodiments, the second bank layer 163 may include: a first side surface 3a at the same side of the bank as the first side surface 1a and facing the first emission area EA1; a second side surface 3b at the same side of the bank as the second side surface 1b and facing the second emission area EA2; and a first surface 3c as the uppermost surface of the bank. The first side surface 3a of the second bank layer 163 may protrude more than the first side surface 1a of the first bank layer 161 in a direction toward the first emission area EA1, and the second side surface 3b of the second bank layer 163 may protrude more than the second side surface 1b of the first bank layer 161 in a direction toward the second emission area EA2. That is, at the respective emission areas EA, the sidewalls of the second bank layer 163 protrude more than the sidewalls of the first bank layer 161. In addition, the first surface 3c may connect the first side surface 3a and the second side surface 3b to each other. The first surface 3c will be described later. The bank sidewalls at the first bank layer 161 and the second bank layer 163 may together define a bank opening of the collective bank layer.

[0140] With respect to an etching process during a process of manufacturing the display device 10, the second bank layer 163 may include a metal material that is relatively stable than the metal material of the first bank layer 161. In other words, the etching rate of the second bank layer 163 may be lower than the etching rate of the first bank layer 161. Therefore, the first side surface 3a and the second side surface 3b of the second bank layer 163 may protrude in a direction toward the emission area EA than the respective side surfaces at the first bank layer 161. In other words, the second bank layer 163 may define a tip TIP as an extension protruding in two opposite directions (e.g., toward both sides of the first emission area EA1 and the second emission area EA2) than the respective side surfaces of the first bank layer 161, and an undercut structure may be formed by the first bank layer 161 and each tip TIP as an extension of the second bank layer 163. Here, an exposed portion of the second bank layer 163 exposed to the bank opening may be defined.

[0141] In some embodiments, reference Figure 6 For example, with respect to the common surface or the common plane, the thickness of the first bank layer 161 in the third direction (Z-axis direction) may be greater than the thickness of the second bank layer 163 .

[0142] The residual pattern 153 of the embodiment may be disposed in a gap between the first anode AE1 and the inorganic pixel defining layer 151 in the third direction (Z-axis direction), and may be disposed in a gap between the second anode AE2 and the inorganic pixel defining layer 151 in the third direction (Z-axis direction). In addition, the residual pattern 153 of the embodiment may overlap with the tip TIP of the embankment structure 160 in the third direction (Z-axis direction). A gap may be defined between an exposed portion (lower surface) at the tip TIP and an exposed portion (upper surface) of the inorganic pixel defining layer 151, and such a gap may define a recessed portion open to the respective embankment openings or emission areas EA.

[0143] The display device 10 according to the embodiment may include a sacrificial layer SFL (see FIG. 10 ) between the inorganic pixel defining layer 151 and each anode AE ​​in a manufacturing process. Fig.12 ). The sacrificial layer SFL may be disposed between the inorganic pixel defining layer 151 and the first anode AE1 and between the inorganic pixel defining layer 151 and the second anode AE2, and may then be partially removed by a subsequent wet etching process. Here, the unremoved portion of the sacrificial layer SFL may remain between the inorganic pixel defining layer 151 and the first anode AE1 and between the inorganic pixel defining layer 151 and the second anode AE2 as a residual pattern 153.

[0144] In an embodiment, the first cathode CE1 may completely cover the first light emitting layer EL1, and the second cathode CE2 may completely cover the second light emitting layer EL2. In addition, the first inorganic layer 171-1 of the embodiment may completely cover the first light emitting element ED1 in a portion overlapping with the first emission area EA1, and may partially cover the first organic pattern ELP1 and the first electrode pattern CEP1 in a portion overlapping with the non-emission area NLA. In addition, the second inorganic layer 171-2 may completely cover the second light emitting element ED2 in a portion overlapping with the second emission area EA2, and may partially cover the second organic pattern ELP2 and the second electrode pattern CEP2 in a portion overlapping with the non-emission area NLA.

[0145] The auxiliary encapsulation layer 172 of the embodiment may cover the first inorganic layer 171-1 and the second inorganic layer 171-2 along the outline formed by the first inorganic layer 171-1 and the second inorganic layer 171-2 in the portion overlapping with the emission area EA and the non-emission area NLA. In addition, the auxiliary encapsulation layer 172 may overlap with the portion between the first inorganic layer 171-1 and the second inorganic layer 171-2 to contact the exposed portion of the second bank layer 163 in the portion overlapping with the non-emission area NLA.

[0146] The auxiliary encapsulation layer 172 of the embodiment may include oxygen ions to increase the spreadability of the organic material. That is, the auxiliary encapsulation layer 172 of the embodiment may increase the spreadability of the second encapsulation layer 173 including the organic material. The first organic layer 173A and the third encapsulation layer 175 will not be described because they have been mentioned above.

[0147] Figure 7 yes Figure 6 An enlarged cross-sectional view of region C in FIG.

[0148] refer to Figure 7 , according to the structure in contact with the second bank layer 163 , the first surface 3 c of the second bank layer 163 may be divided into a first portion c1 , a second portion c2 , and a third portion c3 .

[0149] Specifically, the first portion c1 of the second bank layer 163 may be a portion (e.g., a distance or an area) in contact with the first organic pattern ELP1 and the first portion c1 of the second bank layer 163 may be a portion overlapping with the first electrode pattern CEP1 and the tip TIP of the bank structure 160. In addition, the second portion c2 may be a portion in contact with the second organic pattern ELP2 and the second portion c2 may be a portion overlapping with the tip TIP of the second electrode pattern CEP2 and the bank structure 160. The third portion c3 may be a portion disposed between the first portion c1 and the second portion c2 and in contact with the auxiliary encapsulation layer 172. An exposed portion of the upper surface of the second bank layer 163 may be defined at the third portion c3.

[0150] In other words, the first portion c1 may be a portion overlapping the first electrode pattern CEP1 and the first inorganic layer 171-1, the second portion c2 may be a portion overlapping the second electrode pattern CEP2 and the second inorganic layer 171-2, and the third portion c3 may not overlap the first organic pattern ELP1, the second organic pattern ELP2, the first electrode pattern CEP1, the second electrode pattern CEP2, the first inorganic layer 171-1, the second inorganic layer 171-2, and the tip TIP of the bank structure 160. That is, the second bank layer 163 defining the tip TIP includes a first portion c1, a second portion c2, and a third portion c3, where the first organic pattern ELP1 contacts the bank, where the second organic pattern ELP2 contacts the bank, and where the flow control encapsulation layer (e.g., the auxiliary encapsulation layer 172) contacts the second bank layer 163 exposed at the non-emission area NLA.

[0151] Figure 8 yes Figure 5 An enlarged cross-sectional view of region T in FIG. Fig. 9 yes Figure 5 An enlarged plan view of area T in FIG.

[0152] refer to Figure 8 The fluoride ion layer FL may be disposed on the second via layer 127 in a portion overlapping the non-display area NDA. The fluoride ion layer FL may have a plurality of fluoride ions (F-) randomly disposed at a surface of the fluoride ion layer FL facing the second encapsulation layer 173.

[0153] The process of manufacturing the display device 10 according to the embodiment may include repeated etching processes. In the display device 10 according to the embodiment, a fluorine-containing etching material may be used in the etching process. When a portion of the etching material is not removed and remains after the etching process, a fluorine ion layer FL including fluorine ions (F-) exposed outside the fluorine ion layer FL may be formed. The concentration of fluorine ions (F-) included in the fluorine ion layer FL may be adjusted by adjusting the concentration of the fluorine-containing chemical used in the etching process.

[0154] The material of the second organic layer 173B forming the second encapsulation layer 173 may be spread to the non-display area NDA to be disposed on the fluoride ion layer FL in a portion overlapping the non-display area NDA. The spreadability of the material forming the second organic layer 173B may be controlled by the fluoride ion layer FL. For example, the spreadability of the second organic layer 173B may be adjusted according to the concentration of the fluoride ions (F-) disposed below the second organic layer 173B and in contact with the second organic layer 173B. Specifically, when the concentration of the fluoride ions (F-) disposed in the planar region below the second organic layer 173B and in contact with the second organic layer 173B is relatively high, the spreadability of the material forming the second organic layer 173B may be reduced throughout such a planar region. Therefore, the second organic layer 173B may be formed to be similar to, for example, the first form B1. In addition, when the concentration of the fluoride ions (F-) disposed in the planar region below the second organic layer 173B and in contact with the second organic layer 173B is relatively low, the spreadability of the second organic layer 173B may be increased throughout the planar region. Therefore, the second organic layer 173B can be formed to be similar to, for example, the second form B2. Corresponding to the intermediate concentration of fluorine ions (F-), the second organic layer 173B can also be formed to be similar to the third form B3, which is an intermediate form between the first form B1 and the second form B2. However, this is only an example, and the second organic layer 173B can be formed into various forms other than the first form B1, the second form B2, and the third form B3, depending on the concentration of the fluorine ions (F-) disposed under the second organic layer 173B and in contact with the second organic layer 173B.

[0155] The "form" of the protruding pattern of the second encapsulation layer 173 can be defined by the contact area (e.g., plane area) with the fluoride ion layer FL and / or the height (or thickness) along the thickness direction. In the case where the first form B1 has a relatively small first contact area with the fluoride layer FL, the second form B2 has a second contact area larger than the first contact area of ​​the first form B1, and the third contact area of ​​the third form B3 is between the first contact area of ​​the first form B1 and the second contact area of ​​the second form B2. The height of the form can be inversely proportional to the contact area, without being limited thereto.

[0156] The third encapsulation layer 175 may completely cover the second organic layer 173B. The third encapsulation layer 175 may contact the second organic layer 173B and the fluoride ion layer FL at an exposed region of the fluoride ion layer FL between the protruding patterns of the second encapsulation layer 173 .

[0157] Since the display device 10 according to the embodiment includes the fluorine ion layer FL in the portion overlapping the non-display area NDA, the fluidity of the material forming the second encapsulation layer 173 can be controlled without a physical structure (generally, a dam structure occupying the plane area of ​​the non-display area NDA) for controlling the fluidity of the second encapsulation layer 173. Therefore, in the display device 10 according to the embodiment, the plane area of ​​the non-display area NDA can be minimized, thereby maximizing the plane area of ​​the display area DA.

[0158] refer to Fig. 9 In a plan view, the fluorine ion layer FL may be disposed in the entire portion overlapping the non-display area NDA (e.g., in the entire non-display area NDA). In a plan view, the second organic layer 173B of the embodiment may be disposed on the fluorine ion layer FL in the portion overlapping the non-display area NDA, and may be formed in the form of a plurality of planar shapes (e.g., a plurality of circular shapes or a plurality of substantially elliptical shapes) spaced apart from each other in a direction along the non-display area NDA. Therefore, since the display device 10 according to the embodiment includes the fluorine ion layer FL in the entire non-display area NDA in a plan view, the fluidity of the material forming the second encapsulation layer 173 at the non-display area NDA may be controlled.

[0159] Fig.10 According to the embodiment Figure 2 An enlarged cross-sectional view of area A in FIG. Fig.11 It is along Fig.10 Schematic cross-sectional view of the display area DA taken along line X3 - X3 ′.

[0160] refer to Fig.10 and Fig.11 The display device 30 according to the embodiment is different from the display device 10 according to the previous embodiment in that the display device 30 according to the embodiment includes a dam DAM in a portion overlapping the non-display area NDA. The dam DAM may be a structure for preventing an organic material disposed in a portion overlapping the display area DA from overflowing toward an edge or end of the display device 30 to the non-display area NDA. The dam DAM may surround the display area DA in a plan view. In an embodiment, the dam DAM is farther from the display area DA than the second organic layer 173B, and the fluorine ion layer FL extends from the second organic layer 173B and covers the dam DAM.

[0161] The structure of the display device 30 according to the embodiment overlapping the display area DA may be the same as the structure of the display device 10 according to the previous embodiment overlapping the display area DA. That is, the display device 30 according to the embodiment may increase the spreadability of the second encapsulation layer 173 by including the auxiliary encapsulation layer 172 in the display area DA. Therefore, the second encapsulation layer 173 of the embodiment may be in the form of the first organic layer 173A in the portion overlapping the display area DA. The auxiliary encapsulation layer 172 may not overlap the non-display area NDA. Other details will not be described.

[0162] In some embodiments, the dam DAM may be disposed on the first via layer 125. The dam DAM may include a first sub-dam D1 and a second sub-dam D2. The first sub-dam D1 and the second sub-dam D2 may be sequentially stacked in a third direction (Z-axis direction). The first sub-dam D1 may include the same material as the second via layer 127, and may be disposed on the same layer as the second via layer 127. In addition, the second sub-dam D2 may include the same material as the first encapsulation layer 171, and may be disposed on the same layer as the first encapsulation layer 171. However, the present disclosure is not limited thereto, and depending on an embodiment, the first sub-dam D1 and the second sub-dam D2 may also include the same material as the first encapsulation layer 171. Although the dam DAM has a double-layer structure in the drawings, depending on an embodiment, the dam DAM may also have a single-layer structure or a multi-layer structure other than the double-layer structure.

[0163] The fluoride ion layer FL of the embodiment may be disposed in a portion overlapping the non-display area NDA. The fluoride ion layer FL of the embodiment may cover the first via layer 125, the second via layer 127, and the dam DAM. The fluoride ion layer FL of the embodiment may contact the first via layer 125, the second via layer 127, and the dam DAM. That is, the dam DAM of the embodiment may be covered by the fluoride ion layer FL.

[0164] Since the display device 30 according to the embodiment includes the dam DAM and the fluorine ion layer FL in the non-display area NDA, the spreading property of the second encapsulation layer 173 can be controlled. Therefore, the second encapsulation layer 173 of the embodiment may be in the form of a second organic layer 173B in a portion overlapping the non-display area NDA.

[0165] Therefore, since the display device 30 according to the embodiment includes the fluorine ion layer FL on the surface of the dam DAM overlapping the non-display area NDA, the fluidity of the second encapsulation layer 173 can be controlled with the minimum dam DAM. Therefore, in the display device 30 according to the embodiment, the area of ​​the non-display area NDA can be minimized, thereby maximizing the area of ​​the display area DA.

[0166] Figures 12 to 22 It indicates providing (or manufacturing) Figure 5A cross-sectional view of a method of displaying a device 10 is provided. Figures 12 to 22 It shows the manufacturing Figure 5 1 and 1 . A cross-sectional view of a process and a structure in a method of manufacturing a display element layer 150. The formation order of each layer in the manufacturing process of the display device 10 will now be described.

[0167] refer to Fig.12 , a first anode AE1, a second anode AE2, a sacrificial layer SFL, a pixel defining material layer 151L, a power line V1, and bank material layers 161L and 163L are provided (or formed) on the thin film transistor layer 130. Although not shown in the drawings, the thin film transistor layer 130 may be disposed on the substrate 110 (see Figure 5 The structure of the thin film transistor layer 130 is similar to that of the above reference Figure 5 The structure of the thin film transistor layer 130 described is the same, and thus a detailed description thereof will be omitted.

[0168] The first anode AE1 and the second anode AE2 may be spaced apart from each other on the thin film transistor layer 130. A plurality of sacrificial layers SFL may be disposed on the first anode AE1 and the second anode AE2, respectively. The sacrificial layers SFL may prevent the upper surface of the anode AE ​​from contacting the inorganic pixel defining layer 151 provided from the pixel defining material layer 151L.

[0169] The sacrificial layer SFL may include an oxide semiconductor. For example, the sacrificial layer SFL may include at least one of indium gallium zinc oxide (IGZO), zinc tin oxide (ZTO), and indium tin oxide (ITO).

[0170] The pixel defining material layer 151L may cover the portions of the sacrificial layer SFL and the thin film transistor layer 130 exposed to the outside of the anode AE ​​and the sacrificial layer SFL, and the bank material layers 161L and 163L may completely cover the pixel defining material layer 151L and the power line V1. The bank material layers 161L and 163L may include a first bank material layer 161L and a second bank material layer 163L. The first bank material layer 161L may be directly disposed on the pixel defining material layer 151L, and the second bank material layer 163L may be directly disposed on the first bank material layer 161L.

[0171] refer to Fig.13 and Fig.14 A plurality of photoresists PR are formed on the second bank material layer 163L, and a first etching process (i.e., a first etching) for partially removing portions of the first bank material layer 161L and the second bank material layer 163L is performed using the photoresists PR as a mask. The plurality of photoresists PR may expose portions overlapping the anode AE ​​and may be spaced apart from each other.

[0172] In the first etching process, a plurality of holes HOL may be formed in the second bank material layer 163L, the first bank material layer 161L, and the pixel defining material layer 151L at portions overlapping the first anode AE1 and the second anode AE2, respectively, and a display area DA and a non-display area NDA may be defined. The thin film transistor layer 130 may be exposed by the first etching process. In addition, the pixel defining material layer 151L may be formed as Figure 5 The inorganic pixel defining layer 151 is shown in FIG.

[0173] In an embodiment, the first etching process may be performed as a dry etching process. Since the first etching process is performed as a dry etching process, the bank material layers 161L and 163L including different metal materials and the pixel defining material layer 151L may be etched, thereby exposing the sacrificial layer SFL overlapping the anode AE ​​to the outside of the stacked structure of the remaining portion of the second bank material layer 163L, the first bank material layer 161L, and the pixel defining material layer 151L (e.g., the inorganic pixel defining layer 151).

[0174] refer to Fig.15 A second etching process (ie, a second etching) is performed at the hole HOL to etch the material at the inside of the hole HOL and overlapping with the anode AE. In an embodiment, the second etching process may be performed as a wet etching process.

[0175] In an embodiment, the first bank material layer 161L (see Fig.14 ) can be larger than the second bank material layer 163L (see Fig.14 ) has a high etching rate. That is, the first bank material layer 161L may be etched faster than the second bank material layer 163L. Therefore, the side surface of the second bank layer 163 forming the bank hole may have or define a tip TIP that protrudes more than the side surface of the first bank layer 161 toward the hole HOL. The undercut structure may be formed by each tip TIP of the first bank layer 161 and the second bank layer 163 together. In the second etching process, the first bank material layer 161L may be formed as Figure 5 The first bank layer 161 shown in FIG. 1 and the second bank material layer 163L may be formed as a second bank layer 163 , wherein the first bank layer 161 and the second bank layer 163 together form a bank of the bank structure 160 having bank holes therebetween.

[0176] At the same time, the sacrificial layer SFL disposed on the anode AE ​​may be partially removed (see Fig.14 ). However, the end of the sacrificial layer SFL may not be completely removed, but may remain as a residual pattern 153 in the space between the inorganic pixel defining layer 151 and the anode AE. The residual pattern 153 may overlap the tip TIP in the third direction (Z-axis direction).

[0177] refer to Fig.16 , a first light emitting layer EL1 (light emitting material layer) and a first cathode CE1 (cathode material layer) may be deposited on the first anode AE1. In an embodiment, the first light emitting layer EL1 and the first cathode CE1 may be formed by a thermal evaporation process. In the display device 10 according to the embodiment, since the bank structure 160 includes the tip TIP, the first light emitting layer EL1 and the first cathode CE1 may be formed as a pattern on the first anode AE1 without a fine metal mask.

[0178] However, the deposition process for forming the first light emitting layer EL1 may be performed at an angle of about 45 to about 50 degrees relative to the upper surface of the anode AE. Therefore, the first light emitting layer EL1 may be formed to fill the space between the anode AE ​​and the inorganic pixel defining layer 151, and may extend along the side surface of the first bank layer 161 overlapping the tip TIP.

[0179] The deposition process for forming the first cathode CE1 of the embodiment may be performed at an angle of about 30 degrees or less relative to the upper surface of the anode AE. In other words, the deposition process for forming the first cathode CE1 may be performed at an angle relatively close to the horizontal direction (e.g., parallel to the XY plane) than the deposition process for forming the first light emitting layer EL1. Therefore, the first cathode CE1 may completely cover the first light emitting layer EL1 and may also extend along the side surface of the first bank layer 161 covered by the tip TIP. Through this process, the first light emitting element ED1 may be formed.

[0180] In an embodiment, a portion of the material layer from which the first light emitting layer EL1 and the first cathode CE1 are formed may be disposed not only on the first anode AE1 but also on the second anode AE2 and the second bank layer 163 in a portion overlapping the display area DA, and on the thin film transistor layer 130 in a portion overlapping the non-display area NDA. In other words, in an embodiment, the first light emitting layer EL1 and the first cathode CE1 may be deposited on the entire stacked structure below such a material layer.

[0181] A first encapsulation material layer 171L covering the first cathode CE1 may be formed on the entire surface of the underlying stacked structure. The first encapsulation material layer 171L may be formed using a chemical vapor deposition (CVD) process. The first encapsulation material layer 171L may form a uniform layer (e.g., having a constant thickness) regardless of the steps of the structure below it. For example, the first encapsulation material layer 171L may cover the steps formed by the first light emitting element ED1, and may also cover the undercut portion (undercut structure) formed between the first embankment layer 161 and each tip TIP. The first encapsulation material layer 171L of the embodiment may be deposited in the entire portion overlapping the display area DA and the non-display area NDA.

[0182] refer to Fig.17 and Fig.18 , a photoresist PR may be formed corresponding to the first light emitting element ED1 and the portion around the first light emitting element ED1. Then, a third etching process (i.e., 3rd etching) is performed to partially etch the layer at the region other than the region corresponding to the first light emitting element ED1 and the portion around the first light emitting element ED1. For example, in the third etching process, a wet etching process and a dry etching process may be alternately performed. In the third etching process, the materials of the first light emitting layer EL1, the first cathode CE1, and the first encapsulation material layer 171L in the portion where the photoresist PR is not formed may be completely removed.

[0183] Through the third etching process, the first encapsulation material layer 171L may be formed into a first inorganic layer 171 - 1 , and the material providing the first light emitting layer EL1 and the first cathode CE1 disposed on the second bank layer 163 may be further formed into a first organic pattern ELP1 and a first electrode pattern CEP1 , respectively.

[0184] refer to Fig.19 After forming the previous light emitting element (for example, the first light emitting element ED1), repeat the above steps. Figures 16 to 18 The process described in the above is used to form the second light emitting element ED2. Specifically, the second light emitting layer EL2, the second cathode CE2 and the first encapsulation material layer 171L are deposited on the entire surface of the lower stacked structure. The material providing the second light emitting layer EL2, the second cathode CE2 and the first encapsulation material layer 171L may be formed not only on the second anode AE2, but also on the first inorganic layer 171-1 and the second bank layer 163 in the portion overlapping with the display area DA, and on the thin film transistor layer 130 in the portion overlapping with the non-display area NDA. A photoresist PR may be formed corresponding to the second light emitting element ED2 and the portion around the second light emitting element ED2, and a material portion in an area other than the second light emitting element ED2 and the portion around the second light emitting element ED2 may be partially etched to form the second light emitting element ED2, the second inorganic layer 171-2, the second organic pattern ELP2 and the second electrode pattern CEP2.

[0185] refer to Fig. 20 , the auxiliary encapsulation material layer 172L may be deposited integrally in the display area DA and the non-display area NDA. The auxiliary encapsulation material layer 172L may completely cover the structure below it. The auxiliary encapsulation material layer 172L may include oxygen ions to increase the second encapsulation layer 173 (see Fig. 22) spreadability. When measured by Fourier transform infrared spectroscopy (FT-IR), the oxygen ion content of the auxiliary encapsulation material layer 172L may be about 35% or greater. The material providing the second encapsulation layer 173 may have fluidity (e.g., a first fluidity) relative to the material providing the auxiliary encapsulation material layer 172L.

[0186] The fourth etching process (i.e., the 4th etching) is performed to remove the portion of the auxiliary encapsulation material layer 172L disposed in the portion overlapping the non-display area NDA. For example, the fourth etching process may be a dry etching process. The portion of the auxiliary encapsulation material layer 172L at the non-display area NDA may be etched by using the photoresist PR as a mask, without being limited thereto.

[0187] refer to Fig.21 The auxiliary encapsulation material layer 172L overlapping the non-display area NDA can be removed by a fourth etching process (see Fig. 20 ). Therefore, the auxiliary packaging material layer 172L may be formed as Figure 5 The auxiliary encapsulation layer 172 is shown in FIG.

[0188] The fourth etching process of the embodiment may use fluorine-containing chemicals. Through the fourth etching process, the display device 10 according to the embodiment may have a fluorine ion layer FL in a portion overlapping the non-display area NDA. The fluorine ion layer FL may refer to a layer having fluorine ions (F-) from an etchant including fluorine, which remain at the exposed surface of the fluorine ion layer FL in the non-display area NDA after the fourth etching process is completed. Generally, the fluorine ions (F-) remaining at the surface of the fluorine ion layer FL can control the second encapsulation layer 173 to have low spreading.

[0189] refer to Fig. 22 , a second encapsulation material layer 173L (i.e., a material providing or forming the second encapsulation layer 173) is applied on the entire surface of the auxiliary encapsulation layer 172 and the fluoride ion layer FL. The second encapsulation material layer 173L may have high spreadability relative to the auxiliary encapsulation layer 172 in a portion overlapping the display area DA, and may be formed as Figure 5 In addition, the second encapsulation material layer 173L may have low spreading properties relative to the fluorine layer FL (also referred to as the fluorine ion layer FL) in a portion overlapping the non-display area NDA, and may be formed as Figure 5The auxiliary encapsulation layer 172 and the fluorine layer FL may together provide a flow control layer having a surface along which the material providing the second encapsulation layer 173 spreads. The flow control layer may have a first fluidity at the auxiliary encapsulation layer 172 relative to the material providing the second encapsulation layer 173, and may have a second fluidity at the fluorine ion layer FL relative to the material providing the second encapsulation layer 173, wherein the second fluidity is less than the first fluidity.

[0190] The second organic layer 173B may be formed to include a plurality of sheets or discrete patterns spaced apart from each other, wherein the discrete patterns may have a planar shape (e.g., a circular shape or a substantially elliptical shape) in a plan view. That is, the first organic layer 173A and the second organic layer 173B included in the second encapsulation layer 173 may be formed in the same process and may have different shapes depending on the shape and profile of the underlying structure (e.g., along the planar direction and along the thickness direction).

[0191] As described above, the display device 10 according to the embodiment may have the auxiliary encapsulation layer 172 only in the display area DA, and may have the fluorine ion layer FL only in the non-display area NDA. Therefore, even without a physical structure, the spreadability of the material providing the second encapsulation layer 173 may be controlled. Therefore, since the physical structure for controlling the spreadability is eliminated at the non-display area NDA of the display device 10 according to the embodiment, the area of ​​the non-display area NDA may be designed to be minimum.

[0192] Although not shown in the drawings, a third encapsulation layer 175 (see FIG. 1 ) that completely covers the second encapsulation layer 173 may be formed. Figure 5 ) to manufacture Figure 5 The display device 10 shown in FIG.

[0193] The display device 10 according to the embodiment includes a flow control layer having a fluorine ion layer FL in a portion overlapping with the non-display area NDA and having an auxiliary encapsulation layer 172 in a portion overlapping with the display area DA. Therefore, the spreadability of the material providing the organic encapsulation layer can be controlled. That is, in the display device 10 according to the embodiment, since the spreadability of the material providing the organic encapsulation layer can be flow-controlled without a physical structure in the portion overlapping with the non-display area NDA, the area of ​​the non-display area NDA can be minimized.

[0194] refer to Figure 5In an embodiment, the display device 10 includes: a display area DA, including: an emission area EA, including a light emitting element ED; a non-emission area NLA, including: a pixel defining layer 151, defining a first opening OP1 corresponding to the light emitting element ED; and a dam, on the pixel defining layer 151 and defining a second opening OP2 corresponding to the first opening OP1, the dam including a first dam layer 161 contacting the pixel defining layer 151 and a second dam layer 163 on the first dam layer 161, the second dam layer 163 having a tip TIP protruding more than the first dam layer 161 at the second opening OP2; and a first encapsulation layer 171, on the light emitting element ED and the dam; a non-display area NDA, adjacent to the display area DA; a flow control layer, in the display area DA and in the non-display area NDA, the flow control layer including an auxiliary encapsulation layer 172 in the display area DA and a fluorine ion layer FL in the non-display area NDA; and a second encapsulation layer 173, in the display area DA and in the non-display area NDA, extending along the flow control layer.

[0195] In addition, the display device 10 according to the embodiment may include a dam structure 160 including a tip TIP protruding toward the emission area EA and defining a dam hole corresponding to the emission area EA (eg, light emission area). Therefore, the display device 10 according to the embodiment may form a high-resolution display device through a pattern process.

[0196] In an embodiment, the display device 10 includes: a plurality of emission areas EA, each including a plurality of anodes AE of a plurality of light-emitting elements ED; a non-emission area NLA, between the plurality of emission areas EA, the non-emission area NLA including a pixel defining layer 151 and a dam on the pixel defining layer 151, the dam including a first dam layer 161 on the pixel defining layer 151 and a second dam layer 163 on the first dam layer 161, the second dam layer 163 defining a tip TIP protruding from the first dam layer 161 at each emission area EA; a plurality of cathodes CE of the plurality of light-emitting elements ED, a plurality of The cathodes CE are respectively on the multiple anodes AE and contact the first bank layer 161 of the bank; and an encapsulation layer, on the multiple cathodes CE and on the bank, the encapsulation layer includes multiple first encapsulation layers 171, which are respectively on the multiple cathodes CE and spaced apart from each other at the non-emission area NLA to expose the second bank layer 163 to the outside of the multiple first encapsulation layers 171, and the multiple first encapsulation layers 171 extend from the multiple cathodes CE and along the first bank layer 161 of the bank; and a flow control encapsulation layer covering the first encapsulation layer 171 and contacting the second bank layer 163 exposed at the non-emission area NLA.

[0197] The method of providing the display device 10 includes: providing an anode AE ​​of a light emitting element ED and a sacrificial layer SFL on the anode AE ​​in an emission area EA within a display area DA of the display device 10; providing a pixel defining material layer 151L covering the anode AE ​​and the sacrificial layer SFL in the emission area EA, the pixel defining material layer 151L extending from the emission area EA to a non-emission area NLA adjacent to the emission area EA and to a non-display area NDA adjacent to the display area DA; providing embankment material layers 161L and 163L (e.g., Fig.12 ); providing a hole HOL in the pixel defining material layer 151L and the embankment material layers 161L and 163L by using a first etching process of the photoresist PR on the embankment material layers 161L and 163L, the hole HOL corresponding to the anode AE; providing the hole HOL defines the embankments 161 and 163 from the embankment material layers 161L and 163L, the embankment material layers 161L and 163L having a tip TIP forming an undercut structure of the embankment at the hole HOL, and the anode AE ​​is exposed outside the embankment at the hole HOL (for example, Figures 13 to 15 ); providing a light emitting material layer and a cathode material layer covering the anode AE ​​and the dam; providing a first encapsulation material layer 171L (eg, Fig.16 ); removing respective portions of the light emitting material layer, the cathode material layer, and the first encapsulation material layer 171L except for portions corresponding to the emission area EA and the area extending around the emission area EA; removing respective portions defines a first encapsulation layer 171 from the first encapsulation material layer 171L, the first encapsulation layer 171 overlapping the emission area EA and the area extending around the emission area EA (for example, Figures 17 to 19 ); providing a flow control material layer on the first encapsulation layer 171 and the bank to overlap with both the display area DA and the non-display area NDA; removing a portion of the flow control material layer in the non-display area NDA by a second etching process including an etchant having fluorine ions to define a flow control layer, the flow control layer including the auxiliary encapsulation layer 172 in the display area DA and the fluorine ion layer FL in the non-display area NDA (e.g., Fig. 20 and Fig.21 ) and providing a second encapsulation material layer 173L on the auxiliary encapsulation layer 172 in the display area DA, the second encapsulation material layer 173L spreading along the display area DA and spreading to the fluoride ion layer FL in the non-display area NDA to provide a second encapsulation layer 173 in both the display area DA and the non-display area NDA.

[0198] However, the effects of the present disclosure are not limited to the effects set forth herein. The above and other effects of the present disclosure will become more apparent to those skilled in the art by referring to the claims.

Claims

1. A display device, wherein: The display device comprises: Display area, including: an emitting region, including a light emitting element; Non-emitting areas, including: a pixel defining layer, defining a first opening corresponding to the light emitting element; and a bank on the pixel defining layer and defining a second opening corresponding to the first opening, the bank comprising: a first bank layer contacting the pixel defining layer; and a second bank layer on the first bank layer, the second bank layer having a tip protruding more than the first bank layer at the second opening; and a first encapsulation layer on the light emitting element and the bank; a non-display area, adjacent to the display area; A flow control layer, in the display area and in the non-display area, the flow control layer comprising: An auxiliary encapsulation layer, in the display region; and a fluoride ion layer in the non-display area; and A second encapsulation layer extends in the display area and along the flow control layer in the non-display area.

2. The display device according to claim 1, wherein: The second encapsulation layer comprises: a first organic layer contacting the auxiliary encapsulation layer in the display region; and A second organic layer contacts the fluoride ion layer in the non-display area.

3. The display device according to claim 2, wherein: The material of each of the first organic layer and the second organic layer has spreading property relative to the flow control layer, and The spreadability of the material of the first organic layer and the spreadability of the material of the second organic layer are different from each other.

4. The display device according to claim 3, wherein: The spreadability of the material of the first organic layer is higher than the spreadability of the material of the second organic layer.

5. The display device according to claim 4, wherein: The first organic layer and the second organic layer are spaced apart from each other and are respective parts of the same material layer.

6. The display device according to claim 2, wherein: The material of each of the first organic layer and the second organic layer has spreading property relative to the flow control layer, The spreadability of the material of the first organic layer is defined by contact of the material of the first organic layer along the auxiliary encapsulation layer, and The spreadability of the material of the second organic layer is defined by contact of the material of the second organic layer along the fluoride ion layer.

7. The display device according to claim 6, wherein: The second organic layer includes discrete patterns spaced apart from each other along the fluorine ion layer, the discrete patterns having a circular shape or an elliptical shape in a plan view.

8. The display device according to claim 1, wherein: The fluoride ion layer includes fluoride ions at a surface of the fluoride ion layer facing the second encapsulation layer.

9. The display device according to claim 8, wherein: The auxiliary encapsulation layer includes silicon oxide or silicon oxynitride.

10. The display device according to claim 9, wherein: The auxiliary encapsulation layer has an oxygen content of 35% or more.

11. The display device according to claim 1, wherein: In plan view, the first opening is completely within the second opening.

12. The display device according to claim 2, wherein: The display device further includes a third encapsulation layer on the second encapsulation layer, Wherein, in the non-display area, the third encapsulation layer contacts the second organic layer and the fluoride ion layer, and the third encapsulation layer completely covers the second organic layer and the fluoride ion layer.

13. The display device according to claim 2, wherein: The non-display area also includes: The dam is farther from the display area than the second organic layer, and The fluoride ion layer extends from the second organic layer and covers the dam.

14. A display device, wherein: The display device comprises: a plurality of emission regions, each comprising a plurality of anodes of a plurality of light emitting elements; A non-emitting area, between the plurality of emitting areas, the non-emitting area comprising: a pixel defining layer; and A bank, on the pixel defining layer, the bank comprising: a first bank layer on the pixel defining layer; and a second bank layer on the first bank layer, the second bank layer defining a tip protruding more than the first bank layer at a respective emission region; a plurality of cathodes of the plurality of light emitting elements, the plurality of cathodes being respectively on the plurality of anodes and contacting the first bank layer of the bank; and an encapsulation layer on the plurality of cathodes and on the bank, the encapsulation layer comprising: a plurality of first encapsulation layers respectively on the plurality of cathodes and spaced apart from each other at the non-emitting region to expose the second bank layer outside the plurality of first encapsulation layers, the plurality of first encapsulation layers extending from the plurality of cathodes and along the first bank layer of the bank; and A flow control encapsulation layer covers the first encapsulation layer and contacts the second bank layer exposed at the non-emitting region.

15. The display device according to claim 14, wherein: The anode includes a first anode and a second anode spaced apart from each other, and the pixel defining layer is between the first anode and the second anode; The cathode contacting the first bank layer includes a first cathode on the first anode and a second cathode on the second anode; and The first cathode and the second cathode are electrically connected to each other through the first bank layer.

16. The display device according to claim 15, wherein: The display device further includes a conductive pattern layer, and the conductive pattern layer includes: the first cathode and the second cathode being in the respective emission regions; and In the non-emitting region: a first electrode pattern on the bank and spaced apart from the first cathode; and A second electrode pattern is on the bank and spaced apart from the second cathode.

17. The display device according to claim 16, wherein: The second bank defining the tip includes: a first portion, the first electrode pattern contacting the bank at the first portion; a second portion at which the second electrode pattern contacts the bank; and A third portion, wherein the flow control encapsulation layer contacts the second bank layer exposed at the non-emission region at the third portion.

18. The display device according to claim 17, wherein: The first encapsulation layer comprises: a first inorganic layer covering the first cathode and the first electrode pattern; and The second inorganic layer covers the second cathode and the second electrode pattern.

19. A method for providing a display device, wherein: The method comprises: providing an anode of a light emitting element and a sacrificial layer on the anode in an emission region within a display region of the display device; providing a pixel defining material layer covering the anode and the sacrificial layer in the emission region, the pixel defining material layer extending from the emission region to a non-emission region adjacent to the emission region and to a non-display region adjacent to the display region; providing a bank material layer completely covering the pixel definition material layer; providing a hole in the pixel defining material layer and the bank material layer by a first etching process using a photoresist on the bank material layer, the hole corresponding to the anode; said providing of said hole defining a bank from said bank material layer, said bank having a tip forming an undercut structure of said bank at said hole, said anode being exposed outside said bank at said hole; providing a light emitting material layer and a cathode material layer covering the anode and the bank; providing a first encapsulation material layer over the entire cathode material layer; removing respective portions of the light emitting material layer, the cathode material layer, and the first encapsulation material layer except for portions corresponding to the emission region and a region extending around the emission region; said removing said respective portions defining a first encapsulation layer from said first layer of encapsulation material, said first encapsulation layer overlapping said emitting region and said region extending around said emitting region; providing a flow control material layer on the first encapsulation layer and the bank to overlap both the display area and the non-display area; removing a portion of the flow control material layer in the non-display area by a second etching process including an etchant having fluorine ions to define a flow control layer including an auxiliary encapsulation layer in the display area and a fluorine ion layer in the non-display area; and A second encapsulation material layer is provided on the auxiliary encapsulation layer in the display area, the second encapsulation material layer spreads along the display area and spreads to the fluoride ion layer in the non-display area to provide a second encapsulation layer in both the display area and the non-display area.

20. The method according to claim 19, wherein: The fluoride ion layer does not overlap the display area and the fluoride ion layer contacts the second encapsulation layer.

Images