Silicon-based quantum dot chip for radio frequency measurement and radio frequency measurement structure
CN119968105APending Publication Date: 2025-05-09UNIV OF SCI & TECH OF CHINA +1
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Patent Information
- Application Number
- CN202510126310.6
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-01-27
- Publication Date
- 2025-05-09
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Figure CN119968105A_ABST
Abstract
The invention provides a silicon-based quantum dot chip for radio frequency measurement and a radio frequency measurement structure, which can be applied to the technical field of semiconductor quantum calculation. The silicon-based quantum dot chip comprises a substrate which comprises a first positioning mark area, and the first positioning mark area is provided with at least four ion implantation areas; a first insulating layer disposed on the substrate; the ohmic contact layer is arranged on the periphery of each ion implantation region; the plurality of electrode layers are arranged on the first insulating layer, each electrode layer is composed of a plurality of nanoscale electrodes, an insulating layer is arranged between every two adjacent electrode layers, the plurality of electrode layers are located in an electrode area, the electrode area is located at the central position of projection of a plane where the first positioning mark area is located, and the electrodes comprise source / drain electrodes; wherein the source / drain electrodes are connected with one ends, close to the electrode region, of the ion implantation regions, and the distance between one ends, close to the electrode region, of every two adjacent ion implantation regions is smaller than or equal to 10 microns.
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