Arsenic-element-free multi-element co-doped gate tube material

Abstract

The invention relates to an arsenic-element-free multi-element co-doped gate tube material, and belongs to the field of microelectronic technologies and devices. The material of the gate tube is a Ge-based chalcogenide compound, and the Ge-based chalcogenide compound has co-doping of two elements and does not contain arsenic element doping. The chemical expression formula of the Ge-based chalcogenide compound is preferably GeSe, GeS, GeTe6 or GeTe9. The co-doping of the two elements is preferably C and Te co-doping, P and Sb co-doping, Si and N co-doping, B and S co-doping, and In and Se co-doping. According to the application, by providing a double-element co-doping strategy, arsenic element doping is equivalently substituted in physical structure and chemical property, and introduction of toxic elements is avoided while performance optimization is realized. Compared with a traditional arsenic doping strategy, the doping strategy provided by the invention has the advantages of high safety, lower cost and the like while performance optimization is carried out on the gate tube material.

Description

Technical Field

[0001] The invention belongs to the field of microelectronic technology and devices, and more specifically, relates to a multi-element co-doped gate tube material without arsenic element. Background Art

[0002] With the rapid development of big data and Internet technology, society's demand for data storage and read-write efficiency is increasing. As an innovative storage technology, phase change memory shows great application prospects. Its superior read-write speed and storage capacity may fill the performance gap between internal storage DRAM and external storage NAND FLASH.

[0003] As an important component of phase change memory, the gate tube controls the switch of the storage unit through an external electric field, thereby reducing static power consumption and the possibility of erroneous reading and writing. The gate tube is mainly a sulfur compound. Its working principle is that when the external electric field exceeds the threshold voltage, the sulfur gate tube material will quickly turn on, changing from a high resistance state to a low resistance state, and the corresponding storage unit will be turned on; but when the external voltage is removed, the gate tube material will quickly return to a high resistance state, and the storage unit is closed.

[0004] Common binary chalcogenides such as GeSe and GeS often have some disadvantages when used alone as gate materials, so doping with a small amount of other elements to improve the performance of gate materials is a common strategy. Arsenic is considered to be the optimal doping element in many studies, which can increase the switching window, improve thermal stability, and reduce leakage current. However, due to the highly toxic nature of arsenic itself, the development prospects of arsenic doping in the preparation and practical application of gates are limited. It is urgent to propose a new doping strategy to replace arsenic doping to improve the performance of gates while reducing safety hazards. Summary of the invention

[0005] In view of the defects and improvement needs of the existing doping strategies, the present invention provides a multi-element co-doped gate tube material without arsenic element. The gate tube material is a Ge-based chalcogenide compound, has co-doping of two elements, and does not contain arsenic element doping. The present invention is a co-doping to replace arsenic element, which can significantly improve the performance of the gate tube material similar to arsenic doping. Compared with traditional arsenic doping, the doping material used is less toxic or completely non-toxic, which improves the safety of research and development and use.

[0006] According to a first aspect of the present invention, there is provided a multi-element co-doped gate tube material without arsenic element, wherein the gate tube material is a Ge-based chalcogenide compound co-doped with two elements and does not contain arsenic element doping;

[0007] The chemical expressions of the Ge-based chalcogenide compounds are GeSe, GeS, GeTe 6 or GeTe9 ;

[0008] When the chemical expression of the Ge-based chalcogenide compound is GeSe, the co-doping of the two elements is C and Te co-doping, P and Sb co-doping, Si and N co-doping, B and S co-doping;

[0009] When the chemical expression of the Ge-based chalcogenide compound is GeS, the co-doping of the two elements is C and Te co-doping, P and Sb co-doping, Si and N co-doping, In and Se co-doping;

[0010] The chemical expression of the Ge-based chalcogenide compound is GeTe 6 or GeTe 9 When the two elements are co-doped, they are P and Sb co-doped, Si and N co-doped, B and S co-doped, and In and Se co-doped.

[0011] Preferably, the atomic ratio of the two co-doped elements in the gate material does not exceed 30%.

[0012] Preferably, the ratio of the number of atoms of C to the number of atoms of Te is 0.5-2.

[0013] Preferably, the ratio of the number of P atoms to the number of Sb atoms is 0.5-2.

[0014] Preferably, the ratio of the number of Si atoms to the number of N atoms is 0.5-2.

[0015] Preferably, the ratio of the number of B atoms to the number of S atoms is 0.5-2.

[0016] Preferably, the ratio of the number of In atoms to the number of Se atoms is 0.5-2.

[0017] In general, the above doping strategy conceived by the present application has the following beneficial effects compared with the existing arsenic doping strategy:

[0018] (1) Arsenic plays an important role in the doping materials of the gate tube and can optimize and improve many properties of the gate tube materials. However, the toxicity of arsenic itself limits its practical application. The present invention proposes a dual-element co-doping strategy to perform equivalent substitution of arsenic doping in terms of physical structure and chemical properties, thereby achieving performance optimization while avoiding the introduction of toxic elements. Compared with the traditional arsenic doping strategy, the doping strategy proposed in this application has the advantages of high safety and lower cost while optimizing the performance of the gate tube material.

[0019] (2) The present application adopts a co-doping strategy to replace the traditional arsenic doping strategy, thereby avoiding the involvement of the toxic element arsenic during production and use, and improving the safety of the preparation of the gating tube and its actual application.

[0020] (3) The present invention adopts a co-doping strategy to optimize the gate tube material in a targeted manner in terms of mechanism, thereby achieving effects similar to arsenic doping, such as increasing the switching window, improving thermal stability, and reducing leakage current. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1 It is a schematic diagram of the technical concept of the arsenic-free multi-element co-doped gate tube material of the present invention.

[0022] Figure 2 It is a comparison diagram of radial distribution functions of arsenic doping and 10% P / Sb co-doping in Example 1 of the present application.

[0023] Figure 3 This is a comparison diagram of bond angle distribution between arsenic doping and 10% P / Sb co-doping in Example 1 of the present application.

[0024] Figure 4 This is a comparison diagram of atomic coordination number distribution of arsenic doping and 10% P / Sb co-doping in Example 1 of the present application.

[0025] Figure 5 It is a schematic diagram of the method for preparing a co-doping strategy gating tube unit according to Example 1 of the present application.

[0026] Figure 6 This is a schematic diagram of the structure of the co-doping strategy gating tube unit device in Example 1 of the present application.

[0027] Figure 7 This is a voltage-current characteristic diagram of the co-doped gate tube material in Example 1 of the present application.

[0028] Figure 8 This is a resistance-temperature characteristic diagram of the co-doped gate tube material in Example 1 of the present application.

[0029] Fig. 9 This is a radial distribution function diagram of 30% P / Sb co-doping in Example 2 of the present application.

[0030] Fig.10 This is the bond angle distribution diagram of 30% P / Sb co-doping in Example 2 of the present application.

[0031] Fig.11 This is the atomic coordination number distribution diagram of 30% P / Sb co-doping in Example 2 of the present application.

[0032] Fig.12 This is a radial distribution function diagram of 10% Si / N co-doping in Example 3 of the present application.

[0033] Fig.13 This is the 10% Si / N co-doping bond angle distribution diagram in Example 3 of the present application.

[0034] Fig.14 This is the coordination number distribution diagram of 10% Si / N co-doped atoms in Example 3 of the present application.

[0035] Fig.15 This is a radial distribution function diagram of 10% In / Se co-doping in Example 4 of the present application.

[0036] Fig.16 This is the bond angle distribution diagram of 10% In / Se co-doping in Example 4 of the present application.

[0037] Fig.17 This is the atomic coordination number distribution diagram of 10% In / Se co-doping in Example 4 of the present application. DETAILED DESCRIPTION

[0038] In order to make the purpose, technical solutions and advantages of the present invention more clearly understood, the present invention is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not intended to limit the present invention. In addition, the technical features involved in the various embodiments of the present invention described below can be combined with each other as long as they do not conflict with each other.

[0039] Because the present invention aims to ensure that the combination of doped elements is similar to the effect of arsenic doping in terms of physical and chemical properties, the combination strategy of co-doping elements is mainly centered on arsenic element As, and looking for a combination of elements with similar or complementary electronegativity around it. The physical structure of the co-doped atoms in the substrate gating tube material should be similar to that of arsenic doping, so that firstly the local structure of the co-doped elements can be ensured to be similar to that of arsenic doping, and secondly the small difference in electronegativity can ensure that the bonding situation in the system is similar to that of arsenic doping. For example, by co-doping C / Te elements, C element can improve the thermal stability of the material and Te can increase the switching speed; by co-doping P / Sb elements, since P / Sb elements are elements of the same family as As and have similar physical and chemical properties to As, they are expected to achieve the best performance improvement effect; by co-doping Si / N elements, since the covalent bonds formed by Si and N elements have strong thermal stability, it is expected to significantly improve the thermal stability of the gate tube material; by co-doping B / S elements, while providing more abundant carriers, the band gap can be increased, the switching ratio and the switching speed can be improved; by co-doping In / Se elements, since In is a transition metal element and Se is a common chalcogenide element, the switching window can be increased and the leakage current can be reduced.

[0040] The gate tube material after co-doping of the present invention should obtain performance improvements similar to those obtained by arsenic doping, such as increasing the switching window, improving thermal stability, reducing leakage current, etc.

[0041] Figure 1It is a schematic diagram of the technical concept of the arsenic-free multi-element co-doped gate tube material of the present invention.

[0042] The present application discloses a method for preparing a multi-element co-doped gate tube material without arsenic element, which specifically comprises the following steps:

[0043] S1: preparing a bottom electrode layer on a substrate;

[0044] S2: forming a doped gate material layer on the bottom electrode, wherein the base gate material of the doped gate material layer is GeSe, GeS, GeTe 6 , Gete 9 Any one of, the co-doped material includes any one of C / Te, P / Sb, Si / N, B / S, In / Se;

[0045] S3: preparing a top electrode layer on the doped gate tube material layer.

[0046] Preferably, the method for preparing the bottom electrode layer, the doped gate material layer and the top electrode layer in the above preparation method is one of diffusion method, ion implantation method, epitaxial growth, physical vapor deposition method, chemical vapor deposition method and atomic layer deposition method.

[0047] The following are specific embodiments

[0048] Example 1

[0049] The substrate gate material used in this embodiment is GeSe, and the co-doping materials are P and Sb. The reason for choosing these two elements is that in the periodic table, P and Sb belong to the same main group as arsenic element As, and are most similar to As in chemical properties, and the co-doping effect of replacing As is the best.

[0050] The co-doping atomic concentration used in this embodiment is 5% P doping and 5% Sb doping, that is, the chemical expression is Ge 0.45 Se 0.45 P 0.05 Sb 0.05 , corresponding to 10% As doping.

[0051] You should understand Ge 0.45 Se 0.45 P 0.05 Sb 0.05 The compound is an amorphous compound.

[0052] The co-doping strategy provided in the embodiment of the present application is a chalcogenide gate material of amorphous Ge 0.45 Se 0.45 P 0.05 Sb 0.05 Compounds, for convenience, doped with As element Ge 0.45Se 0.45 As 0.1 In contrast, it is simplified as Ge 0.45 Se 0.45 X 0.1 , where X represents P and Sb.

[0053] Specifically, the present invention simulates the amorphous Ge by first-principles calculation. 0.45 Se 0.45 P 0.05 Sb 0.05 Compounds and As doped Ge 0.45 Se 0.45 X 0.1 Compounds, local structural information of the two systems was obtained.

[0054] like Figure 2 As shown, amorphous Ge 0.45 Se 0.45 P 0.05 Sb 0.05 Compounds with Arsenic-doped Ge 0.45 Se 0.45 X 0.1 Comparing the radial distribution functions of each element in the compound, it can be seen that the bond length distributions of Ge-Se and Ge-Ge remain basically unchanged. At the same time, the distributions of Ge-X and Ge-As are similar, and the distributions of X-Se and As-Se are similar, indicating that the bond length in the co-doped system remains basically unchanged. The bond length and atomic weight are often the key factors determining the density of the material, indicating that the co-doped material is similar to arsenic doping in density.

[0055] like Figure 3 As shown, amorphous Ge 0.45 Se 0.45 P 0.05 Sb 0.05 Compounds with Arsenic-doped Ge 0.45 Se 0.45 X 0.1 Comparing the coordination numbers of the elements in the compound, it can be seen that Ge has the most 4 coordinations, followed by 3 coordinations; Se has mainly 3 coordinations, followed by 4 coordinations; the co-doping element group X has mainly 3 coordinations, followed by 2 coordinations; As also has mainly 3 coordinations, followed by 2 coordinations. It can be seen that the coordination numbers in the two systems are also similar, and the number of bonds is generally related to the stability of the amorphous system, indicating that the co-doped material and arsenic doping are similar in local structural stability.

[0056] like Figure 4 As shown, amorphous Ge 0.45 Se 0.45 P 0.05 Sb 0.05 Compounds with Arsenic-doped Ge 0.45 Se0.45 X 0.1 The bond angle distribution of each element in the compound is compared. From the bond angle distribution, it can be seen that the bond angle distribution of Ge and Se is basically unchanged, mainly 109° and 90°, and the distribution of the co-doped element X slightly deviates from 90° and moves in the direction of a larger angle, which is similar to the trend of the bond angle of the As element. The bond angle distribution in the system can generally reflect the local configuration of the material, indicating that the co-doped material is similar to arsenic doping in local configuration.

[0057] From the above local structural analysis of the two systems, it can be seen that the physical structure of the system after co-doping is similar to that of As doping.

[0058] Furthermore, the present invention embodiment prepares a co-doped gate tube unit by the preparation method of the present invention, such as Figure 5 As shown, the specific steps are as follows:

[0059] S1: preparing a bottom electrode layer on a substrate;

[0060] S2: forming a co-doped gate material layer on the bottom electrode, wherein the base gate material of the doped gate material layer is GeSe, the co-doped material is P / Sb, the doping atomic concentration is 5% P and 5% Sb, and the stoichiometric ratio is Ge 0.45 Se 0.45 P 0.05 Sb 0.05 A co-doped gate material layer;

[0061] S3: preparing a top electrode layer on the doped gate tube material layer.

[0062] Specifically, the bottom electrode layer material and the top electrode layer material in the above preparation process are both TiN, with a thickness of 100 nm, and the thickness of the co-doped gate tube material layer is 50 nm. The specific schematic diagram of the gate tube unit device structure is as follows: Figure 6 shown.

[0063] Specifically, the bottom electrode layer, the top electrode layer and the doped gate material layer in the above preparation process can be prepared by one of diffusion method, ion implantation method, epitaxial growth, physical vapor deposition method, chemical vapor deposition method and atomic layer deposition method. In this embodiment, the bottom electrode layer, the top electrode layer and the doped gate material layer are prepared by physical vapor deposition method.

[0064] Furthermore, the embodiment of the present application carried out electrical testing and annealing crystallization experiments on the above-mentioned gate tube unit to verify the performance improvement of the co-doping strategy on the substrate GeSe gate tube material.

[0065] The voltage-current characteristics of the co-doped gate material are as follows Figure 7 As shown, it can be seen that the threshold voltage V of the gate tube material after co-dopingth Reach 3.15V, maintain voltage V h The switching window of GeSe material is about 0.9V. The switching window of the co-doping strategy is 1.72V, which significantly increases the switching window, similar to the effect of As doping. The current switching ratio can also reach 10 5 Compared with GeSe's 10 3 There is a significant improvement.

[0066] The resistance-temperature characteristics of the co-doped gate material are as follows: Figure 8 As shown, the crystallization temperature after co-doping reaches about 440°C, which is similar to about 450°C of As doping, and is significantly higher than 350°C of GeSe, which can significantly enhance the thermal stability of the gate tube material.

[0067] Example 2

[0068] The substrate gate tube material used in this embodiment is GeSe, and the co-doped materials are P and Sb, which are the same as those in the first embodiment.

[0069] The co-doping atomic concentrations used in this embodiment are 15% P doping and 15% Sb doping, that is, the chemical expression is Ge0.35Se0.35P0.15Sb0.15, corresponding to 30% As doping.

[0070] It should be understood that the Ge0.35Se0.35P0.15Sb0.15 compound is an amorphous compound.

[0071] The co-doping strategy chalcogenide gating tube material provided in the embodiment of the present application is an amorphous Ge0.35Se0.35P0.15Sb0.15 compound, which is simplified as Ge0.35Se0.35X0.3, where X represents P and Sb.

[0072] Specifically, the embodiment of the present application simulated the amorphous Ge0.35Se0.35P0.15Sb0.15 compound through first-principles calculations to obtain the local structural information of the system.

[0073] like Fig. 9 As shown, it can be seen that the distribution of Ge-Se and Ge-Ge bond lengths in the amorphous Ge0.35Se0.35P0.15Sb0.15 compound remains basically unchanged. At the same time, the radial distribution function values ​​of Ge-X and X-Se bonds are small, indicating that the system is mainly composed of Ge-Se bonds, and the density will not change much when doped with As.

[0074] like Fig.10As shown in the figure, the coordination numbers of each element in the amorphous Ge0.35Se0.35P0.15Sb0.15 compound are compared. It can be seen that Ge has the largest coordination number of 4, followed by 3; Se has the largest coordination number of 3, followed by 4; the co-doped element group X has the largest coordination number of 4, followed by 3. It can be seen that the doping elements form more high coordination numbers, and the number of bonds is generally related to the stability of the amorphous system, indicating that co-doped materials can enhance local stability and further enhance the thermal stability of the material.

[0075] like Fig.11 As shown in the figure, the bond angle distribution of each element in the amorphous Ge0.35Se0.35P0.15Sb0.15 compound is compared. From the bond angle distribution, it can be seen that the bond angle distribution of Ge and Se is basically unchanged, mainly 109° and 90°, and the distribution of the co-doped element X is mainly 90°, which is similar to the trend of the bond angle of the As element. The bond angle distribution in the system can generally reflect the local configuration of the material, indicating that the co-doped material is similar to arsenic doping in local configuration, which can improve the switching speed.

[0076] From the above analysis of the local structure of the GeSe gate material co-doped with 30% P / Sb, it can be seen that the properties of the gate material can be improved significantly after co-doping, and the toxic As element is not included.

[0077] Example 3

[0078] The substrate gate tube material used in this embodiment is GeS, and the co-doped materials are Si and N.

[0079] The co-doping atomic concentration used in this embodiment is 5% Si doping and 5% N doping, that is, the chemical expression is Ge0.45S0.45Si0.05N0.05, corresponding to 10% As doping.

[0080] It should be understood that the Ge0.45S0.45Si0.05N0.05 compound is an amorphous compound.

[0081] The co-doping strategy chalcogenide gating tube material provided in the embodiment of the present application is an amorphous Ge0.45S0.45Si0.05N0.05 compound, which is simplified as Ge0.45S0.45X0.1, wherein X represents Si and N.

[0082] Specifically, the embodiment of the present application simulated the amorphous Ge0.45S0.45Si0.05N0.05 compound through first-principles calculations to obtain the local structural information of the system.

[0083] like Fig.12As shown, it can be seen that the amorphous Ge0.45S0.45Si0.05N0.05 compound has a larger radial distribution value of Ge-S. At the same time, the radial distribution function value of Ge-X and XS bonding is smaller, and the bond length is shorter. Shorter bonds tend to have stronger thermal stability, indicating that Si / N co-doping can improve the thermal stability of the system. Secondly, it shows that the system is mainly composed of Ge-S bonds, contains Ge-X and XS bonds, and does not contain SS bonds.

[0084] like Fig.13 As shown in the figure, the coordination numbers of each element in the amorphous Ge0.45S0.45Si0.05N0.05 compound are compared. It can be seen that Ge has the largest coordination of 3, followed by 4; S has the largest coordination of 3, followed by 4; the co-doped element group X has the largest coordination of 3, followed by 4. It can be seen that the coordination environment of the co-doped element is similar to that of the S element, which can enhance the switching performance of the gate tube material and increase the switching ratio.

[0085] like Fig.14 As shown in the figure, the bond angle distribution of each element in the amorphous Ge0.45S0.45Si0.05N0.05 compound is compared. From the bond angle distribution, it can be seen that the bond angle distribution of Ge and S is mainly 90° and 109°, and the distribution of the co-doped element X is mainly 109°, mainly in tetrahedral configuration. The bond angle distribution in the system can generally reflect the local configuration of the material, indicating that the co-doped material can improve the thermal stability.

[0086] Through the above analysis of the local structure of the 10% Si / N co-doped GeS gate tube material, it can be seen that after co-doping, the properties of the gate tube material can be greatly improved in many aspects, and the penguin does not contain the toxic As element.

[0087] Example 4

[0088] The substrate gate tube material used in this embodiment is GeTe 9 , the co-doped materials are In and Se.

[0089] The co-doping atomic concentrations used in this embodiment are 5% In doping and 5% Se doping, that is, the chemical expression is Ge0.09S0.81In0.05Se0.05, corresponding to 10% As doping.

[0090] It should be understood that the Ge0.09S0.81In0.05Se0.05 compound is an amorphous compound.

[0091] The co-doping strategy chalcogenide gate material provided in the embodiment of the present application is an amorphous Ge0.09S0.81In0.05Se0.05 compound, which is simplified as Ge0.09Te0.81X0.1, where X represents In and Se.

[0092] Specifically, the embodiment of the present application simulated the amorphous Ge0.09S0.81In0.05Se0.05 compound through first-principles calculations to obtain the local structural information of the system.

[0093] like Fig.15 As shown in the figure, the Te-Te radial distribution value of the amorphous Ge0.09S0.81In0.05Se0.05 compound is relatively large, because the amorphous compound is mainly composed of Te. At the same time, the radial distribution function value of Ge-Te and X-Te bonding is relatively small, which is similar to the previous As doping results, indicating that In / Se co-doping can achieve similar effects as As doping.

[0094] like Fig.16 As shown in the figure, the coordination numbers of the elements in the amorphous Ge0.09S0.81In0.05Se0.05 compound are compared. It can be seen that Te has the largest coordination of 3, followed by 4; Ge has the largest coordination of 4, followed by 3; the co-doped element group X has the largest coordination of 2, followed by 3. It can be seen that the coordination environment of the co-doped element is similar to that of the As element, which can enhance the switching performance of the gate tube material, increase the switching ratio, and improve the switching speed.

[0095] like Fig.17 As shown in the figure, the bond angle distribution of each element in the amorphous Ge0.09S0.81In0.05Se0.05 compound is compared. From the bond angle distribution, it can be seen that the bond angle distribution of Te and Ge is mainly 90° and 109°, and the distribution of the co-doped element X is mainly 109°, mainly in tetrahedral configuration. The bond angle distribution in the system can generally reflect the local configuration of the material, indicating that the co-doped material can improve the thermal stability.

[0096] The above-mentioned 10% In / Se co-doped GeTe 9 The local structural analysis of the gate tube material shows that the properties of the gate tube material can be greatly improved in many aspects after co-doping, and does not contain the toxic As element.

[0097] It will be easily understood by those skilled in the art that the above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should be included in the protection scope of the present invention.

Claims

1. An arsenic-free multi-element co-doped gate material, characterized in that: The gate tube material is a Ge-based chalcogenide compound co-doped with two elements and does not contain arsenic doping; The chemical expression of the Ge-based chalcogenide compound is GeSe, GeS, GeTe6 or GeTe9; When the chemical expression of the Ge-based chalcogenide compound is GeSe, the co-doping of the two elements is C and Te co-doping, P and Sb co-doping, Si and N co-doping, B and S co-doping; When the chemical expression of the Ge-based chalcogenide compound is GeS, the co-doping of the two elements is C and Te co-doping, P and Sb co-doping, Si and N co-doping, In and Se co-doping; When the chemical expression of the Ge-based chalcogenide compound is GeTe6 or GeTe9, the co-doping of the two elements is P and Sb co-doping, Si and N co-doping, B and S co-doping, In and Se co-doping.

2. The arsenic-free multi-element co-doped gate material according to claim 1, characterized in that: The atomic ratio of the two co-doped elements in the gate material does not exceed 30%.

3. The arsenic-free multi-element co-doped gate material according to claim 1, characterized in that: The ratio of the number of atoms of C to the number of atoms of Te is 0.5-2.

4. The arsenic-free multi-element co-doped gate material according to claim 1, characterized in that: The ratio of the number of P atoms to the number of Sb atoms is 0.5-2.

5. The arsenic-free multi-element co-doped gate material according to claim 1, characterized in that: The ratio of the number of Si atoms to the number of N atoms is 0.5-2.

6. The arsenic-free multi-element co-doped gate material according to claim 1, characterized in that: The ratio of the number of B atoms to the number of S atoms is 0.5-2.

7. The arsenic-free multi-element co-doped gate material according to claim 1, characterized in that: The ratio of the number of In atoms to the number of Se atoms is 0.5-2.

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