Ga element-based chalcogenide gate tube material and gate tube device unit

Abstract

The invention relates to a Ga element-based chalcogenide gate tube material and a gate tube device unit, and belongs to the technical field of microelectronics. The general chemical formula of the gate tube material is GaxMxQ1-2x, M is any one of chalcogenide elements S, Se and Te, Q is a doping material and is at least one of In, C, N, Si, As, Sc and Y, x is the atomic percent of the elements, x is larger than or equal to 0.35 and smaller than or equal to 0.5, and x is larger than or equal to 0 and smaller than or equal to 2 and smaller than or equal to 0.3. The gate tube material provided by the embodiment of the invention is only composed of two main elements or two elements and a small amount of doped elements, the components are relatively simple and easy to regulate and control, and the gate tube material has the advantages of relatively small leakage current, relatively high thermal stability and relatively large switching ratio, and can effectively reduce crosstalk and static power consumption when being integrated in a three-dimensional phase change memory unit.

Description

Technical Field

[0001] The invention belongs to the field of microelectronic technology, and more specifically, relates to a gate tube material and a gate tube device unit based on a sulfur compound of Ga element. Background Art

[0002] With the rapid development of big data and the Internet, today's society has higher and higher requirements for data storage and read and write speed. As an emerging memory architecture, three-dimensional stacked phase change memory has great development potential. Its high-speed read and write capabilities and large capacity are expected to fill the storage wall between internal storage DRAM and external storage NAND FLASH.

[0003] In addition to the phase change material unit used in the phase change memory, a gate tube is usually used to control the switch of the storage unit to avoid misreading and reduce static power consumption. The basic gating principle of the gate tube is: use an external voltage to control the switch. When the external voltage exceeds the threshold voltage, the gate tube material changes from a high-resistance state to a low-resistance state, and the gate tube is in the on state; when the external voltage is removed, the gate tube material will quickly return from a high-resistance state to a high-resistance state, and it is in the off state.

[0004] At present, sulfur compounds based on Ge element, such as GeS and GeSe, are widely studied as gate tube materials. However, sulfur compounds based on Ge element have disadvantages as gate tubes, such as small on-state current, poor thermal stability, and high leakage current. It is urgent to find new gate tube materials with excellent performance. Summary of the invention

[0005] In view of the shortcomings of the existing sulfur-based compounds based on the Ge element as gate tubes, such as small on-state current, poor thermal stability, and high leakage current, the present invention provides a sulfur-based compound gate tube material and a gate tube device unit based on the Ga element, which have the effects of small leakage current, high thermal stability, and large switching ratio, thereby solving the problems of the existing gate tube material having a complex composition, poor thermal stability, high leakage current, and small switching ratio.

[0006] According to a first aspect of the present invention, a gate material based on a chalcogenide compound of Ga element is provided. The gate material is an amorphous compound with a general chemical formula of Ga x M x Q 1-2x , wherein M is a chalcogenide element, Q is a doping element; x is the atomic percentage of element Ga and element M, 1-2x is the atomic percentage of element Q, and 0.35≤x<0.5, 0<1-2x≤0.3.

[0007] Preferably, the chalcogenide element is at least one of S, Se and Te.

[0008] Preferably, the doping element is at least one of C, N, Si, As, Sb, In and Al.

[0009] According to another aspect of the present invention, a gate tube device unit is provided, comprising a bottom electrode layer, a gate tube material functional layer, and a top electrode layer arranged from bottom to top, wherein the material of the gate tube material functional layer is the gate tube material of the sulfur compound based on the Ga element.

[0010] Preferably, the materials of the bottom electrode layer and the top electrode layer are independently selected from TiN, Al, W, inert metal materials, indium tin oxide and graphene semi-metal type two-dimensional atomic crystal materials.

[0011] Preferably, the thickness of the bottom electrode layer is 70 nm to 200 nm, and the thickness of the top electrode layer is 50 nm to 150 nm.

[0012] Preferably, the thickness of the gate material functional layer is 5 nm to 100 nm.

[0013] According to another aspect of the present invention, there is provided an application of the gate material based on the Ga-based chalcogenide compound in a memory.

[0014] According to another aspect of the present invention, there is provided an application of the gate transistor device unit in a memory.

[0015] According to another aspect of the present invention, an application of an amorphous sulfide compound based on Ga element as a gate tube material is provided, wherein the chemical formula of the amorphous sulfide compound based on Ga element is GaM, wherein M is a sulfide element, and the sulfide element is at least one of S, Se and Te.

[0016] In general, the above technical solutions conceived in this application have the following advantages compared with the prior art:

[0017] (1) The gate material provided by the present invention is a Ga-based sulfide compound, wherein Ga atoms mainly form four-coordination, and the local structure mainly forms a tetrahedral structure with Ga atoms as the center; sulfide atoms mainly form three-coordination, and the local structure mainly forms a distorted triangular pyramid structure with sulfide atoms as the center, and a small amount of doping material atoms are basically evenly dispersed in the gate material. The complex amorphous local structure formed above makes the amorphous sulfide compound have high thermal stability; at the same time, the homopolar Ga-Ga bonds formed by Ga atoms will produce local defect structures, resulting in defect states in the gate material, thereby ensuring that there are enough carriers to form a large on-state current after the gate is turned on; at the same time, many coordination bonds are formed between Ga atoms and sulfide atoms due to excessive lone pairs of electrons in sulfide atoms and empty hybrid orbitals of Ga atoms, which reduces the number of lone pairs of electrons in the gate material, thereby limiting the leakage current of the gate material in the off state; in addition, the gate material provided by the present invention has the advantages of large switching ratio, high thermal stability and small leakage current. The gate tube material of the present invention can realize instantaneous transition from a high-resistance state to a low-resistance state under the operation of an electrical signal, and can spontaneously return to a high-resistance state instantaneously when the electrical signal is removed.

[0018] (2) The gate tube material provided by the present invention is a sulfide compound material based on the Ga element. The energy band gap of the Ga-based sulfide compound is generally large, and the main bond strength in the material is strong. There are many coordination bonds that reduce the number of lone pairs of electrons in the material. The local structure of Ga atoms is tetrahedral, and the local structure of sulfide atoms is distorted triangular pyramid. When it is used as a gate tube material, it has the advantages of good thermal stability, small leakage current, and large off-state resistance. For example, the crystallization temperature of GaS material is about 450°C, and the band gap is about 2.25eV. Using it as a gate tube material can significantly improve the thermal stability of the gate tube, reduce leakage current to reduce static power consumption, and can also reduce the crosstalk problem caused by misreading of the gate tube in the phase change memory.

[0019] (3) The gate tube material provided by the present invention can adjust and optimize the on-state current, threshold voltage, leakage current, thermal stability, durability and cycle characteristics of the gate tube unit by doping any one or more of C, N, Si, As, Sb, In and Al into the Ga-based sulfide compound, so as to meet the requirements for developing high-performance gate tubes. For example, doping with a certain amount of C and N can improve the stability of the gate tube material, slow down the aging degree, and inhibit the threshold drift to a certain extent; doping with a certain amount of Sb and As can reduce the band gap of the gate tube material and reduce the threshold voltage.

[0020] (4) The Ga-based gating tube material provided in this application has simple components, simple preparation process and operation, and few preparation processes, which can realize large-scale production.

[0021] (5) The gate tube unit provided by the present invention has the advantages of small threshold voltage, large switch ratio, high thermal stability, small leakage current, etc., can be applied to memory, and has good application prospects. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] Figure 1 This is an example diagram of the atomic coordination number distribution in a GaS gate tube material provided in Example 1 of the present application.

[0023] Figure 2 This is an example diagram of the distribution of a tetrahedral structure centered on a Ga atom provided in Example 1 of the present application.

[0024] Figure 3 This is an example diagram of the local structure q parameter of a GaS gating tube material provided in Example 1 of the present application.

[0025] Figure 4 This is a schematic diagram of the state density of a GaS gating tube material provided in Example 2 of the present application.

[0026] Figure 5 This is a schematic diagram of the structure of a GaS gating tube unit provided in Example 2 of the present application.

[0027] Figure 6 This is a flow chart of a method for preparing a GaS gating tube unit provided in Example 2 of the present application.

[0028] Figure 7 This is a schematic diagram of the structure of a GaS gating tube device provided in Example 2 of the present application.

[0029] Figure 8 This is a resistance-temperature characteristic diagram of a GaS gating tube material provided in Example 2 of the present application.

[0030] Fig. 9 This is a voltage-current characteristic diagram of a GaS gating tube material provided in Example 2 of the present application.

[0031] Fig.10 This is an example diagram of the atomic coordination number distribution in a GaSN gate tube material provided in Example 3 of the present application.

[0032] Fig.11 This is a schematic diagram of the state density of a GaSN gate tube material provided in Example 3 of the present application.

[0033] Fig.12 This is an example diagram of the distribution of a tetrahedral structure centered on a Ga atom provided in Example 3 of the present application.

[0034] Fig.13This is an example diagram of the local structure q parameter of a GaSN gate tube material provided in Example 3 of the present application. DETAILED DESCRIPTION

[0035] In order to make the purpose, technical solutions and advantages of the present invention more clearly understood, the present invention is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not intended to limit the present invention. In addition, the technical features involved in the various embodiments of the present invention described below can be combined with each other as long as they do not conflict with each other.

[0036] The commonly used Ge-based gating tube materials currently have the main disadvantages of large leakage current and low thermal stability. In comparison, the Ga-based gating tube material, the substrate material in this application, has a larger band gap than the Ge-based gating tube material. Specifically, the energy band gap of GaS is 2.25eV, the energy band gap of GaSe is 1.76eV, and the energy band gap of GaTe is 1.26eV, which is greater than the energy band gap of GeSe (1.08eV), which means that in the absence of an external voltage, the leakage current of the gating tube material itself is small, which can significantly reduce static power consumption. At the same time, the main bonding (Ga-S / Se / Te) bond strength in the Ga-based gating tube material is greater, which makes the thermal stability of the material itself higher, because a larger bond strength requires more heat to cause the material to undergo physical structural changes, thereby failing.

[0037] Preferably, a small amount of doping is performed on the Ga-based gate tube material as the substrate, which can further improve the performance of the gate tube material in certain aspects, such as enhancing material stability, increasing the switching ratio, etc., so that when the gate tube material provided by the present application is applied to the gate tube unit, the performance of the gate tube unit can be greatly improved, thereby being applied to the field of storage technology.

[0038] Based on this, the present application provides a gate tube material, wherein the gate tube material is a Ga-based chalcogenide compound, and the chemical formula of the gate tube material is Ga x M x Q 1-2x , wherein M represents at least one of the chalcogenide elements S, Se, and Te, Q is a doping material including any one or more of C, N, Si, As, Sb, In, and Al, and 0.35≤x≤0.5, 0≤1-2x≤0.3.

[0039] It should be noted that Ga x M x Q 1-2x The doping material Q may be included in the formula, or may not be included (i.e., 1-2x=0, the gate material expression can be simplified to GaM), without limitation. x Mx Q 1-2x It can be: GaS, GaSe, GaTe, etc., which is not limited in this application.

[0040] It should be understood that Ga x M x Q 1-2x The compound is an amorphous compound.

[0041] The gate tube substrate material may be formed first, and then the doping material may be introduced into the gate tube substrate material by any one of multi-target co-sputtering, ion implantation, thermal evaporation diffusion, etc.

[0042] The gate tube material provided by the present invention is amorphous Ga x M x Q 1-2x Compounds, wherein Ga atoms mainly form a four-coordinate structure, and the local structure is dominated by a tetrahedron centered on Ga atoms; at the same time, sulphur atoms mainly form a three-coordinate structure, and the local structure is dominated by a distorted triangular pyramid centered on sulphur atoms. The coordination numbers of Ga atoms and sulphur atoms are slightly higher than the chemical valence states in common sense, because many coordination bonds are formed between Ga atoms and sulphur atoms, and the formation of coordination bonds is attributed to the empty orbits of Ga atoms and the extra lone pairs of electrons in sulphur atoms. The coordination bonds reduce the number of lone pairs of electrons in the gate tube material, significantly reducing the leakage current of the gate tube in the off state. The complex amorphous structure of Ga atoms and sulphur atoms improves the thermal stability of the gate tube material. At the same time, Ga atoms will produce obvious defect states in the amorphous system, and the defect states play an important role in the conduction of the gate tube material, so the Ga-based gate tube material has a large on-state current. In summary, the gate tube material provided by the present invention has the advantages of large on-state current, small leakage current, large switch ratio, good thermal stability, etc.

[0043] Preferably, doping can be performed in Ga-based gate tube materials to improve the characteristics of the materials in certain aspects. The doping materials include any one or more of C, N, Si, As, Sb, In, and Al. The above gate tube materials are applied to gate tube elements to adjust and optimize the on-state current, threshold voltage, thermal stability, cycle durability, etc. of the gate tube unit. For example, doping with a certain amount of Al, since Al is a metal element with a lower band gap and abundant carriers, can appropriately reduce the band gap to reduce the threshold voltage value; doping with a certain amount of C and N can form stronger covalent bonds in the material system, and the thermal stability of covalent bonds is often higher, which can maintain the stability of the amorphous network at high temperatures to improve thermal stability, reduce leakage current, and enhance the cycle and durability of the gate tube; doping with transition metal elements such as As, Sb, and In can reduce the polarity difference of the system, ensure that the material will not have chemical composition segregation under multiple electrical operations, and ensure the chemical stability and functional stability of the material.

[0044] The gate tube material can realize instantaneous transition from a high-resistance state to a low-resistance state under the operation of an electrical signal. When the electrical signal is removed, the gate tube material instantly and spontaneously returns to the high-resistance state.

[0045] The gate tube material can be prepared by magnetron sputtering, chemical vapor deposition, physical vapor deposition, atomic layer deposition, thermal evaporation, molecular beam epitaxy, etc.

[0046] The present application also provides a gate tube device unit, comprising:

[0047] bottom electrode layer;

[0048] A gate material functional layer, comprising any one of the aforementioned gate materials, which is located above the bottom electrode layer;

[0049] The top electrode layer is located above the gate material functional layer.

[0050] The materials of the bottom electrode layer and the top electrode layer include one or more of TiN, Al, W, inert metal materials, indium tin oxide and graphene semi-metal type two-dimensional atomic crystal materials.

[0051] The thickness of the gate tube material functional layer described in the present application can be set according to actual needs. In an embodiment, the thickness of the gate tube material functional layer can be 5nm to 100nm. Preferably, the thickness of the gate tube material functional layer is 10nm to 70nm.

[0052] The thickness of the bottom electrode layer described in the present application can be set according to actual needs. In an embodiment, the thickness of the bottom electrode layer can be 70nm to 200nm. Preferably, the thickness of the gate tube material functional layer is 90nm to 120nm.

[0053] The thickness of the top electrode layer described in the present application can be set according to actual needs. In an embodiment, the thickness of the top electrode layer can be 50nm to 150nm. Preferably, the thickness of the gate material functional layer is 80nm to 110nm.

[0054] The present application also provides a method for preparing the above-mentioned gate tube unit, comprising the following steps:

[0055] preparing a bottom electrode layer on a substrate;

[0056] Preparing the gate material above the bottom electrode layer to form a gate material functional layer;

[0057] A top electrode layer is prepared above the gate material functional layer.

[0058] In an embodiment, the bottom electrode layer, the gate material layer and the top electrode layer may be prepared by any one of magnetron sputtering, chemical vapor deposition, physical vapor deposition, atomic layer deposition, thermal evaporation and molecular beam epitaxy.

[0059] The following are specific embodiments:

[0060] Example 1

[0061] This embodiment provides a gate tube material. The gate tube material is a compound including at least Ga and S. The chemical formula of the gate tube material is Ga x M x Q 1-2x , wherein Q is a doping material, and 0.35≤x≤0.5, 0≤1-2x≤0.3.

[0062] Specifically, the gate tube material is doped with GaS alloy as the base material, and the doping material is used to improve at least one of the thermal stability, durability, leakage current or cycle characteristics of the GaS alloy material.

[0063] Specifically, the value of 1-2x in the chemical formula of the gate tube material may be 0, that is, the gate tube material does not contain any doping material, and in this case, the gate tube material is only a GaS compound.

[0064] Specifically, the value of 1-2x in the chemical formula of the gate tube material may not be 0, that is, the gate tube material contains doping material, and in this case 0<1-2x≤0.3, that is, the atomic percentage of the doping material is less than or equal to 30%.

[0065] Specifically, the above-mentioned doping materials may include any one or more of C, N, Si, As, Sb, In, and Al. In this embodiment, by doping the GaS gate tube material with at least one of C, N, and Si, the thermal stability of the gate tube material can be improved and the cycle durability can be enhanced; doping with at least one of As and Sb can increase the on-state current and increase the switching ratio; doping with at least one of In and Al can reduce the band gap of the gate tube material to reduce the threshold voltage.

[0066] Specifically, the doping method of the doping material can be prepared by magnetron sputtering, chemical vapor deposition, physical vapor deposition, atomic layer deposition, thermal evaporation, molecular beam epitaxy, etc.

[0067] Specifically, the doping material target and the GaS target are co-sputtered to prepare the gate tube material, and the gate tube materials with different doping ratios can be prepared by adjusting the sputtering power.

[0068] Specifically, the gate material Ga x S x Q 1-2xThe gating characteristic is: under the operation of an electrical signal of a certain size, it can instantly change from a high-impedance state to a low-impedance state, and when the electrical signal is removed, it can instantly change from a low-impedance state to a high-impedance state.

[0069] Specifically, this embodiment provides simulation results of an amorphous system of undoped GaS gate tube material.

[0070] like Figure 1 As shown, the coordination number of Ga in the amorphous GaS system is mainly 4, and the coordination number of S is mainly 3, so that in the gate material Ga mainly forms a tetrahedral local structure, and S mainly forms a distorted triangular pyramid structure. Figure 2 As shown in the figure, the tetrahedron distribution centered on Ga atoms in the amorphous GaS gate tube material is shown. It can be clearly seen that the short-range structure of the amorphous GaS gate tube material is basically dominated by the tetrahedron local structure, forming a stable amorphous structure, which helps to improve the thermal stability of the material. Figure 3 As shown in Figure 1, by integrating the number of q parameters in the range of 0.8 to 1.0, the number of tetrahedrons in the material can be reflected, and it is found that the tetrahedral content of Ga atoms reaches 84%, which further confirms that the high thermal stability of amorphous GaS is inevitable. Figure 4 As shown in the figure, we calculated the band structure of the amorphous GaS gate tube material and found that its band gap value is 2.25eV. The large band gap and obvious defect states ensure that the material can achieve gate tube performance. Based on this, the amorphous GaS gate tube material has good thermal stability, can withstand higher preparation and operating temperatures, and has low leakage current and good switching performance.

[0071] Example 2

[0072] The present application provides a gate tube unit made of the gate tube material GaS prepared in Example 1, the gate tube unit includes a bottom electrode layer, a gate tube material functional layer and a top electrode layer; wherein the gate tube material functional layer includes the amorphous gate tube material GaS prepared in Example 1, and the preparation of the gate tube material functional layer refers to Example 1.

[0073] The bottom electrode layer is located below the gate tube material functional layer;

[0074] The top electrode layer is located above the gate material functional layer;

[0075] Specific structure such as Figure 5 shown.

[0076] Specifically, the materials of the bottom electrode layer and the top electrode layer include one or more of TiN, Al, W, inert metal materials, indium tin oxide and graphene semi-metal type two-dimensional atomic crystal materials.

[0077] The thickness of the gate tube material functional layer of this embodiment can be set according to actual needs. In the embodiment, the thickness of the gate tube material functional layer can be 5nm~100nm. Preferably, the thickness of the gate tube material functional layer of this embodiment is 10nm~70nm.

[0078] The thickness of the bottom electrode layer of this embodiment can be set according to actual needs. In the embodiment, the thickness of the bottom electrode layer can be 70nm to 200nm. Preferably, the thickness of the functional layer of the gate tube material of this embodiment is 90nm to 120nm.

[0079] The thickness of the top electrode layer of this embodiment can be set according to actual needs. In the embodiment, the thickness of the top electrode layer can be 50nm to 150nm. Preferably, the thickness of the functional layer of the gate tube material of this embodiment is 80nm to 110nm.

[0080] The specific preparation method of the gate tube unit is as follows Figure 6 As shown, the following steps are included:

[0081] 10 nm Ti and 100 nm Pt are deposited as bottom electrode materials on SiO2 or Si substrate by magnetron sputtering, wherein Ti is used as an adhesion layer to improve the adhesion between the bottom electrode and the substrate, thereby forming a bottom electrode layer;

[0082] A 100nm SiO2 barrier layer is prepared on the surface of the bottom electrode layer by plasma enhanced chemical vapor deposition; a small hole pattern is obtained by electron beam lithography; the SiO2 layer is etched by inductively coupled plasma; a gate material functional layer is grown on the surface of the barrier layer and the bottom electrode layer to form a "U"-shaped gate material functional layer; the gate material functional layer has a thickness of 50nm, and the gate material functional layer is the gate material in Example 1;

[0083] On the surface of the gate material functional layer, W is deposited as a top electrode material by magnetron sputtering to form a "T"-shaped top electrode layer with a thickness of 100 nm.

[0084] The cross-sectional view of the gate tube unit device formed is as follows Figure 7 shown.

[0085] The resistance-temperature correlation of the prepared gate transistor device was measured, and the test results are as follows: Figure 8 It can be seen that the crystallization temperature of the gate tube material GaS exceeds 450°C, and GaS can always maintain a high resistance state when the temperature is lower than the crystallization temperature, proving that the gate tube material has good thermal stability.

[0086] The voltage-current correlation of the prepared gate tube material was measured, and the test results are as follows: Fig. 9The threshold voltage of the gate tube material GaS is about 1.88V, the on-state current is about 1mA, the holding voltage is about 0.56V, the leakage current is about 55nA, and the switch ratio can reach 10 4 Above this, the switching window reaches above 1.2V, which has good switching performance.

[0087] The resistance-temperature correlation measurement and the voltage-current correlation measurement show that the performance of the Ga-based amorphous gate tube material is significantly better than that of the Ge-based amorphous gate tube material, and has the advantages of better thermal stability, lower leakage current, and larger switching ratio.

[0088] Example 3

[0089] This embodiment provides a gate tube material. The gate tube material is a compound including at least Ga and S. The chemical formula of the gate tube material is Ga x M x Q 1-2x , wherein Q includes doped materials, and 0.35≤x≤0.5, 0≤1-2x≤0.3.

[0090] Specifically, the selected doping material is N, the atomic percentage x is 0.425, and 1-2x is 0.15.

[0091] Specifically, this embodiment provides simulation results of an amorphous system of a GaS gate tube material doped with N element.

[0092] like Fig.10 As shown, in the amorphous GaSN system, the coordination number of Ga is mainly 4, the coordination number of S is mainly 3, and the coordination number of N is mainly 4, so that in the gate material Ga mainly forms a tetrahedral local structure, S mainly forms a distorted triangular pyramid structure, and N forms a tetrahedral local structure. Fig.11 As shown in the figure, the tetrahedron distribution centered on Ga atoms in the amorphous GaS gate tube material is shown. It can be clearly seen that the short-range structure of the amorphous GaSN gate tube material is basically dominated by the tetrahedron local structure, forming a stable amorphous structure, which helps to improve the thermal stability of the material. Fig.12 As shown in the figure, by integrating the number of q parameters in the range of 0.8 to 1.0, the number of tetrahedrons in the material can be reflected, and it is found that the tetrahedron content of Ga atoms reaches 88%, which further confirms that doping N elements can improve the thermal stability of the gate tube material. Fig.13 As shown in the figure, the band structure of the amorphous GaSN gate tube material is calculated, and it is observed that a larger band gap can produce significantly more abundant defect states. The larger band gap and obvious defect states ensure that the material can achieve gate tube performance. Based on this, the amorphous GaSN gate tube material has better thermal stability and can withstand higher preparation and operating temperatures.

[0093] It will be easily understood by those skilled in the art that the above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should be included in the protection scope of the present invention.

Claims

1. A gating tube material based on a chalcogenide compound of Ga element, characterized in that: The gate tube material is an amorphous compound with a chemical formula of Ga x M x Q 1-2x , wherein M is a chalcogenide element, Q is a doping element; x is the atomic percentage of element Ga and element M, 1-2x is the atomic percentage of element Q, and 0.35≤x<0.5, 0<1-2x≤0.

3.

2. The gate tube material based on the chalcogenide compound of Ga element as claimed in claim 1, characterized in that: The chalcogenide element is at least one of S, Se and Te.

3. The gate tube material based on the chalcogenide compound of Ga element as claimed in claim 1, characterized in that: The doping element is at least one of C, N, Si, As, Sb, In and Al.

4. A gate tube device unit, characterized in that: It comprises a bottom electrode layer, a gate material functional layer and a top electrode layer arranged from bottom to top, wherein the material of the gate material functional layer is the gate material based on the sulfur compound of Ga element as claimed in any one of claims 1 to 3.

5. The gate device unit according to claim 4, characterized in that: The materials of the bottom electrode layer and the top electrode layer are independently selected from TiN, Al, W, an inert metal material, indium tin oxide and a graphene semi-metal type two-dimensional atomic crystal material.

6. The gate device unit according to claim 4, characterized in that: The thickness of the bottom electrode layer is 70nm-200nm, and the thickness of the top electrode layer is 50nm-150nm.

7. The gate device unit according to claim 4, characterized in that: The thickness of the gate tube material functional layer is 5nm-100nm.

8. Application of the gate tube material based on the Ga-based sulfur compound as claimed in any one of claims 1 to 3 in a memory.

9. Application of the gate transistor device unit as described in any one of claims 4 to 7 in a memory.

10. Application of amorphous chalcogenide compounds based on Ga element as gate tube materials, characterized in that: The chemical formula of the Ga-based amorphous chalcogenide compound is GaM, wherein M is a chalcogenide element, and the chalcogenide element is at least one of S, Se and Te.

Images