Semiconductor device

Abstract

The invention provides a semiconductor device capable of improving withstand voltage. According to one embodiment, a semiconductor device includes first to third electrodes and first and second semiconductor portions. The first semiconductor portion is of a first conductivity type. The first semiconductor portion includes first to third semiconductor regions. The first conductivity type impurity concentration in the second through third semiconductor regions is higher than the first conductivity type impurity concentration in the first semiconductor region. The second semiconductor portion includes first to fourth portions. The first to third portions are provided in the unit portion. The first portion and the third portion have a first depth. The second part is arranged between the first part and the third part. The second portion has a second depth that is shallower than the first depth. The first portion is disposed on the second semiconductor region, and the fourth portion is disposed on the third semiconductor region.

Description

Technical Field

[0001] Embodiments of the present invention relate to a semiconductor device. Background Art

[0002] Semiconductor devices are required to have higher withstand voltage.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Publication No. 2023-45865 Summary of the invention

[0006] Technical problem to be solved by the invention

[0007] Embodiments of the present invention provide a semiconductor device capable of improving withstand voltage.

[0008] Means for solving technical problems

[0009] According to an embodiment, a semiconductor device includes a first electrode, a second electrode, a third electrode, a first semiconductor portion, a second semiconductor portion, a third semiconductor portion, and a fourth semiconductor portion. The first semiconductor portion is provided between the first electrode and the second electrode and is of a first conductivity type. The first semiconductor portion includes: a first semiconductor region; a second semiconductor region provided on the first semiconductor region in the first direction from the first electrode to the second electrode intersecting with a second direction from the unit portion to the terminal portion, and in the unit portion, the impurity concentration of the first conductivity type is higher than the impurity concentration of the first conductivity type in the first semiconductor region; and a third semiconductor region provided on the first semiconductor region in the first direction and in the terminal portion, and the impurity concentration of the first conductivity type is higher than the impurity concentration of the first conductivity type in the first semiconductor region. The second semiconductor portion is of a second conductivity type provided on the first semiconductor portion. The second semiconductor portion includes a first portion of a first depth, a second portion of a second depth shallower than the first depth, and a third portion of the first depth in the unit portion. The first portion, the second portion, and the third portion are provided on the second semiconductor region in such a manner that the second portion is provided between the first portion and the third portion. In the terminal portion, the fourth portion is provided on the third semiconductor region. The third semiconductor portion is of the second conductivity type. The third semiconductor portion includes: a first region portion provided on the first portion, the second portion, and the third portion; and a second region portion provided on the fourth portion. The fourth semiconductor portion is of the first conductivity type. The fourth semiconductor portion is provided on the first portion, the first region portion, and the third portion. The third electrode is provided between the first portion and the second electrode. BRIEF DESCRIPTION OF THE DRAWINGS

[0010] Figure 1 is a schematic cross-sectional view illustrating the semiconductor device according to the first embodiment.

[0011] Figure 2 It is a schematic diagram illustrating the characteristics of the semiconductor device according to the first embodiment.

[0012] Figure 3 is a schematic cross-sectional view illustrating a semiconductor device according to a comparative example.

[0013] Figure 4 It is a schematic diagram illustrating the characteristics of a semiconductor device of a comparative example.

[0014] Figure 5 It is a schematic diagram illustrating the characteristics of the semiconductor device according to the first embodiment.

[0015] Figure 6is a schematic cross-sectional view illustrating a semiconductor device according to a second embodiment.

[0016] Figure 7 is a schematic cross-sectional view illustrating a semiconductor device according to a third embodiment. DETAILED DESCRIPTION

[0017] Hereinafter, embodiments of the present invention will be described with reference to the drawings.

[0018] The drawings are schematic or conceptual, and the relationship between the thickness and width of each part, the ratio of the size between parts, etc. are not necessarily the same as the actual ones. Even when the same part is shown, the size and ratio may be shown differently depending on the drawings.

[0019] In the present specification and each drawing, for drawings that have already appeared, the same reference numerals are given to the same elements as those previously described, and detailed description thereof will be appropriately omitted.

[0020] (First Embodiment)

[0021] Figure 1 is a schematic cross-sectional view illustrating the semiconductor device according to the first embodiment.

[0022] like Figure 1 As shown, the semiconductor device 100 of the embodiment includes a first electrode 51, a second electrode 52, a third electrode 53, a first semiconductor portion 11, a second semiconductor portion 12, a third semiconductor portion 13, and a fourth semiconductor portion 14. The first semiconductor portion 11, the second semiconductor portion 12, the third semiconductor portion 13, and the fourth semiconductor portion 14 include SiC. The first semiconductor portion 11, the second semiconductor portion 12, the third semiconductor portion 13, and the fourth semiconductor portion 14 may include at least one selected from the group consisting of 4H-SiC, 6H-SiC, and 3C-SiC. These semiconductor portions include crystals. These semiconductor portions may include silicon. These semiconductor portions may include a compound semiconductor containing Ga.

[0023] A first direction from the first electrode 51 to the second electrode 52 is defined as a Z-axis direction. A second direction perpendicular to the Z-axis direction is defined as an X-axis direction. A third direction perpendicular to the Z-axis direction and the X-axis direction is defined as a Y-axis direction.

[0024] like Figure 1 As shown, the semiconductor device 100 includes a unit portion 110, a terminal portion 120, and a connection portion 130. The connection portion 130 is provided between the unit portion 110 and the terminal portion 120. For example, the unit portion 110, the terminal portion 120, and the connection portion 130 may be provided for the first semiconductor portion 11.

[0025] The first semiconductor portion 11 is of the first conductivity type. The second semiconductor portion 12 is of the second conductivity type. The first conductivity type is one of the n-type and the p-type. The second conductivity type is the other of the n-type and the p-type. Hereinafter, the first conductivity type is the n-type and the second conductivity type is the p-type.

[0026] The first semiconductor portion 11 is provided between the first electrode 51 and the second electrode 52. The first semiconductor portion 11 includes a cell portion 110, a connection portion 130, and a terminal portion 120. The first semiconductor portion 11 includes a first semiconductor region 11a, a second semiconductor region 11b, and a third semiconductor region 11c.

[0027] The second semiconductor region 11 b is provided on the first semiconductor region 11 a in the cell portion 110 in the X-axis direction (first direction) from the first electrode 51 to the second electrode 52 which intersects the Z-axis direction (second direction) from the cell portion 110 to the terminal portion 120 .

[0028] The third semiconductor region 11 c is provided on the first semiconductor region 11 a in the Z-axis direction and in the terminal portion 120 .

[0029] The first conductivity type impurity concentration in the second semiconductor region 11b and the third semiconductor region 11c is higher than the impurity concentration in the first semiconductor region 11a. The first semiconductor region 11a is, for example, an n-type region. The second semiconductor region 11b and the third semiconductor region 11c are, for example, n-type regions. + Region. In the first semiconductor region 11 a , the second semiconductor region 11 b , and the third semiconductor region 11 c , the boundaries between them may be clear or unclear.

[0030] The second semiconductor portion 12 has a first portion 12a of a first depth, a second portion 12b of a second depth shallower than the first depth, and a third portion 12c of the first depth in the unit portion 110. The second portion 12b is provided between the first portion 12a and the third portion 12c. The first portion 12a, the second portion 12b, and the third portion 12c are provided on the second semiconductor region 11b. In the terminal portion 120, a portion of the fourth portion 12d of the second semiconductor portion 12 is provided on the third semiconductor region 11c. The depth of the fourth portion 12d is a second depth shallower than the first depth. Here, the depth corresponds to, for example, a position in the X-axis direction (first direction) based on the position of the first electrode 51 in the first direction. The distance along the first direction between the first electrode 51 and the first portion 12a is shorter than the distance along the first direction between the first electrode 51 and the second portion 12b. The distance along the first direction between the first electrode 51 and the third portion 12c is shorter than the distance along the first direction between the first electrode 51 and the second portion 12b. The distance along the first direction between the first electrode 51 and the fourth portion 12d is longer than the distance along the first direction between the first electrode 51 and the first portion 12a. The distance along the first direction between the first electrode 51 and the fourth portion 12d is longer than the distance along the first direction between the first electrode 51 and the third portion 12c. In one example, the length of the fourth portion 12d along the second direction may be longer than the length of the third portion 12c along the second direction.

[0031] The boundaries between the first portion 12a, the second portion 12b, the third portion 12c and the fourth portion 12d may be clear or unclear. The first portion 12a, the second portion 12b, the third portion 12c and the fourth portion 12d are semiconductor regions that represent a portion of the second semiconductor portion 12, respectively.

[0032] In the terminal portion 120, the third semiconductor region 11c is provided on the side and bottom surface of the fourth portion 12d. In the terminal portion 120, a portion of the third semiconductor region 11c is electrically connected to the second electrode 52. For example, the distance along the first direction between the first electrode 51 and the third semiconductor region 11c is longer than the distance along the first direction between the first electrode 51 and the third portion 12c. For example, the distance along the first direction between the first electrode 51 and the third semiconductor region 11c is shorter than the distance along the first direction between the first electrode 51 and the fourth portion 12d. For example, the distance along the first direction between the first electrode 51 and the third semiconductor region 11c is longer than the distance along the first direction between the first electrode 51 and the second semiconductor region 11b.

[0033] The third semiconductor portion 13 is of the second conductivity type. The second conductivity type impurity concentration in the third semiconductor portion 13 is higher than the second conductivity type impurity concentration in the second semiconductor portion 12. The third semiconductor portion 13 is, for example, p ++ The third semiconductor portion 13 includes a first region portion 13a and a second region portion 13b. The first region portion 13a is disposed on the first portion 12a, the second portion 12b, and the third portion 12c. A portion of the first region portion 13a is electrically connected to the second electrode 52. For example, the first region portion 13a is in ohmic contact with the second electrode 52. The second region portion 13b is disposed on the fourth portion 12d at the terminal portion 120. In the first region portion 13a and the second region portion 13b, the boundary may be clear or unclear. The first region portion 13a and the second region portion 13b are semiconductor regions representing a portion of the third semiconductor portion 13, respectively.

[0034] The fourth semiconductor portion 14 is of the first conductivity type. The first conductivity type impurity concentration in the fourth semiconductor portion 14 is higher than the first conductivity type impurity concentration in the first semiconductor portion 11. The fourth semiconductor portion 14 is, for example, n ++ The fourth semiconductor portion 14 is disposed on the first portion 12a, the first region portion 13a and the second portion 12b. The fourth semiconductor portion 14 includes a first region 14a and a second region 14b. The first region 14a is disposed on the first portion 12a. The second region 14b is disposed on the second portion 12b. A portion of the fourth semiconductor portion 14 is electrically connected to the second electrode 52. For example, the fourth semiconductor portion 14 is in ohmic contact with the second electrode 52. In the first region 14a and the second region 14b, the boundary may be clear or unclear. The first region 14a and the second region 14b are semiconductor regions representing a portion of the fourth semiconductor portion 14, respectively.

[0035] The first insulating portion 41 is provided around the third electrode 53. A portion of the first insulating portion 41 is provided between the second semiconductor region 11b and the third electrode 53. The first insulating portion 41 includes, for example, SiO 2 In addition, an insulating portion 15 may be provided in the semiconductor device 100 . The insulating portion 15 is provided between the fourth semiconductor portion 14 and the second electrode 52 , between the fourth portion 12 d and the second electrode 52 , and between the fourth portion 12 d and the second electrode 52 .

[0036] like Figure 1 As shown, the fifth semiconductor portion 16 is provided between the first electrode 51 and the first semiconductor portion 11 in the first direction. The first conductivity type impurity concentration in the fifth semiconductor portion 16 is higher than the first impurity concentration in the first semiconductor portion 11. The fifth semiconductor portion 16 may correspond to at least one of the buffer layer and the substrate, for example. A low resistance electrical connection can be obtained.

[0037] For example, Figure 1 As shown, a first silicide 17a and a second silicide 17b may also be provided in the semiconductor device 100. The first silicide 17a is provided in the cell portion 110. The first silicide 17a is provided between the first region portion 13a and the second electrode 52 in the first direction. At least a portion of the first silicide 17a is provided between the first region 14a and the second region 14b in the second direction. The second silicide 17b is provided in the terminal portion 120. The second silicide 17b is provided between the second region portion 13b and the second electrode 52 in the first direction.

[0038] In the semiconductor device 100, the current flowing between the first electrode 51 and the second electrode 52 can be controlled by the potential of the third electrode 53. The potential of the third electrode 53 can be, for example, a potential based on the potential of the second electrode 52. The first electrode 51 functions as a drain electrode, for example. The second electrode 52 functions as a source electrode, for example. The third electrode 53 functions as a gate electrode, for example. The semiconductor device 100 is, for example, a transistor. In addition, the semiconductor device 100 is, for example, a MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) with a built-in Schottky barrier diode.

[0039] Figure 2 is a schematic diagram illustrating the characteristics of the semiconductor device 100. Figure 2 In FIG. 1 , the first electrode 51 and the fifth semiconductor portion 16 are omitted. Figure 2 In the case of the high-concentration portion, the electric field is high, and in the low-concentration portion, the electric field is low. In addition, in the cell portion 110, the current E flows in the Y-axis direction through the second portion 12b.

[0040] Figure 3 is a schematic cross-sectional view illustrating a semiconductor device 100A in a comparative example. Figure 3 1, the same reference numerals are given to the same structures as those of the semiconductor device 100. In the semiconductor device 100A, the fourth semiconductor region 11d connecting the second semiconductor region 11b of the unit portion 110 and the third semiconductor region 11c of the terminal portion 120 is provided on the first semiconductor region 11a. The fourth semiconductor region 11d is an n-type. The first conductivity type impurity concentration in the fourth semiconductor region 11d is higher than the impurity concentration in the first semiconductor region 11a.

[0041] Figure 4 is a schematic diagram illustrating the characteristics of the semiconductor device 100A in the comparative example. Figure 4In the case of the electric field, the electric field is higher in the concentrated portion and lower in the diluted portion. In addition, at the terminal portion 120, the current E flows in the Y-axis direction through the end portion of the fourth portion 12d.

[0042] like Figure 4 As shown in FIG. 1 , when the fourth semiconductor region 11d is provided from the cell portion 110 to the terminal portion 120 via the connection portion 130, the electric field becomes stronger at the terminal portion 120, and the withstand voltage of the semiconductor device 100A becomes lower. Figure 2 As shown, in the semiconductor device 100 of this embodiment, the second semiconductor region 11b of the unit portion 110 and the third semiconductor region 11c of the terminal portion 120 are separated in the X-axis direction. As a result, the electric field in the first portion 12a and the second portion 12b can be enhanced. Therefore, from the unit portion 110 to the terminal portion 120, Figure 2 The electric field distribution shown is Figure 4 The distribution of the electric field shown is relaxed, and the withstand voltage of the semiconductor device 100 can be improved.

[0043] Figure 5 It is a diagram showing an example of the withstand voltage of the semiconductor device 100 .

[0044] Figure 5 The horizontal axis is the drain voltage. The vertical axis is the drain current. In the semiconductor device 100, the withstand voltage exceeds the target voltage value T. The voltage value T is, for example, 1600V.

[0045] The second semiconductor region 11 b and the third semiconductor region 11 c are provided in the semiconductor device 100. The second semiconductor region 11 b and the third semiconductor region 11 c each serve as a current diffusion layer.

[0046] In the unit portion 110, the first portion 12a and the third portion 12c of the first depth are provided on the second semiconductor region 11b. For example, the electric field of the first portion 12a and the third portion 12c can be enhanced by the second semiconductor region 11b. Thus, the electric field from the unit portion 110 to the terminal portion 120 can be relaxed, and the withstand voltage of the semiconductor device 100 can be improved.

[0047] At the terminal portion 120, the third semiconductor region 11c makes Schottky contact with the second electrode 52. A Schottky barrier diode (SBD) is formed in a region including the third semiconductor region 11c, the second electrode 52, and the contact region. Thus, the operation of the parasitic diode at the terminal portion 120 can be controlled. By increasing the contact region, the unipolar current can be increased.

[0048] (Second Embodiment)

[0049] The second embodiment is different in that a fifth portion 12e is provided. Therefore, the difference caused by the provision of the fifth portion 12e will be described. In addition, the same reference numerals are attached to the same structures as those in the first embodiment, and detailed descriptions thereof will be omitted.

[0050] Figure 6 is a schematic cross-sectional view illustrating a semiconductor device according to a second embodiment.

[0051] like Figure 6 As shown, in the semiconductor device 200 of the embodiment, the second semiconductor portion 12 includes the fifth portion 12 e in the connection portion 130. The structure of the semiconductor device 200 other than this may be the same as that of the semiconductor device 100.

[0052] The depth of the fifth portion 12e is the third depth in the first direction. The third depth is deeper than the first depth of the first portion 12a and the third portion 12c. In this example, the position (depth) of the lower end of the fifth portion 12e is substantially the same as the position (depth) of the lower end of the second semiconductor region 11b. The distance along the first direction between the first electrode 51 and the fifth portion 12e is longer than the distance along the first direction between the first electrode 51 and the third portion 12c.

[0053] In the semiconductor device 200 , the fifth portion 12 e can further relax the electric field at the end of the third portion 12 c . The semiconductor device 200 can further improve the withstand voltage.

[0054] (Third Embodiment)

[0055] Figure 7 is a schematic cross-sectional view illustrating a semiconductor device according to a third embodiment.

[0056] like Figure 7 As shown, in the semiconductor device 300 of the embodiment, the structures of the unit portion 110 and the connection portion 130 are different from those in the semiconductor device 100. The other structures of the semiconductor device 300 may be the same as those of the semiconductor device 100 or the semiconductor device 200.

[0057] In the semiconductor device 300 , in the cell portion 110 , the third portion 12 c extends toward the connection portion 130 . The second region 14 b on the second portion 12 b also extends toward the connection portion 130 .

[0058] A gap S2 is provided in the second semiconductor portion 12. The gap S2 is provided at the connection portion between the unit portion 110 and the connection portion 130. The width W1 of the gap S2 is, for example, not less than 0.1 μm and not more than 10 μm. The width W1 may be, for example, 1 μm. The depth of the lower end of the second semiconductor portion 12 corresponding to the gap S2 may be substantially the same as the depth of the lower end of the third semiconductor portion 13, for example.

[0059] In the semiconductor device 300, the fifth portion 12e includes the gap S2. By providing the gap S2, the electric field can be further relaxed compared to the semiconductor device 200 of the second embodiment. The semiconductor device 300 can further improve the withstand voltage.

[0060] In an embodiment, for example, the first conductivity type impurity includes at least one selected from the group consisting of N, P, and As. For example, the second conductivity type impurity includes at least one selected from the group consisting of B, Al, and Ga.

[0061] In one example, the concentration of the first conductivity type impurity in the first semiconductor portion 11 is, for example, 1×10 14 cm -3 Above and 1×10 17 cm -3 In one example, the concentration of the second conductivity type impurity in the second semiconductor portion 12 is, for example, 1×10 16 cm -3 Above and 1×10 20 cm -3 In one example, the concentration of the second conductivity type impurity in the third semiconductor portion 13 is, for example, 1×10 19 cm -3 Above and 1×10 21 cm -3 In one example, the concentration of the first conductivity type impurity in the fourth semiconductor portion 14 is, for example, 1×10 19 cm -3 Above and 1×10 21 cm -3 In one example, the concentration of the first conductivity type impurity in the fifth semiconductor portion 16 is, for example, 1×10 15 cm -3 Above and 1×10 18 cm -3 The above impurity concentration may be, for example, substantially a carrier concentration.

[0062] In the embodiment, information on the length and thickness is obtained by electron microscope observation, etc. Information on the composition of the material is obtained by SIMS (Secondary Ion Mass Spectrometry) or EDX (Energy dispersive X-ray spectroscopy), etc.

[0063] The embodiments include the following aspects.

[0064] (Note 1)

[0065] A semiconductor device comprising:

[0066] a first electrode;

[0067] a second electrode;

[0068] A first semiconductor portion of a first conductivity type is provided between the first electrode and the second electrode, and the first semiconductor portion has:

[0069] a first semiconductor region;

[0070] a second semiconductor region provided on the first semiconductor region in the unit portion in a first direction from the first electrode toward the second electrode intersecting with a second direction from the unit portion toward the terminal portion, and having an impurity concentration of the first conductivity type higher than an impurity concentration of the first conductivity type in the first semiconductor region; and

[0071] a third semiconductor region provided on the first semiconductor region in the first direction and at the terminal portion, the impurity concentration of the first conductivity type being higher than the impurity concentration of the first conductivity type in the first semiconductor region; and

[0072] A second semiconductor portion of a second conductivity type is provided on the first semiconductor portion, and the second semiconductor portion has, in the unit portion:

[0073] a first portion at a first depth, a second portion at a second depth shallower than the first depth, and a third portion at the first depth, wherein the first portion, the second portion, and the third portion are disposed on the second semiconductor region in such a manner that the second portion is disposed between the first portion and the third portion,

[0074] In the terminal portion, a fourth portion of the second semiconductor portion is disposed on the third semiconductor region,

[0075] The third semiconductor portion of the second conductivity type has:

[0076] A first region portion, disposed on the first portion, the second portion, and the third portion; and

[0077] A second area portion, arranged on the fourth portion;

[0078] The fourth semiconductor portion of the first conductivity type is disposed on the first portion, the first region portion, and the third portion; and

[0079] The third electrode is disposed between the first portion and the second electrode.

[0080] (Note 2)

[0081] The semiconductor device according to Supplementary Note 1, wherein the third semiconductor region is in Schottky contact with the second electrode.

[0082] (Note 3)

[0083] The semiconductor device according to Supplement 1 or 2, wherein:

[0084] further comprising a connecting portion provided between the unit portion and the terminal portion in the second direction,

[0085] The second semiconductor portion further includes a fifth portion,

[0086] The fifth portion is disposed on the first semiconductor region at the connection portion,

[0087] At least a portion of the fifth portion has a third depth deeper than the first depth.

[0088] (Note 4)

[0089] The semiconductor device according to Supplementary Note 3, wherein the fifth portion includes a gap.

[0090] (Note 5)

[0091] The semiconductor device according to any one of Supplementary Notes 1 to 4, wherein:

[0092] further comprising a first insulating portion,

[0093] At least a portion of the first insulating portion is disposed between the first portion and the third electrode.

[0094] (Note 6)

[0095] The semiconductor device according to any one of Supplementary Notes 1 to 5, wherein:

[0096] The concentration of the first conductivity type impurity in the fourth semiconductor portion is higher than the concentration of the first conductivity type impurity in the first semiconductor portion.

[0097] The concentration of the second conductivity type impurities in the third semiconductor portion is higher than the concentration of the second conductivity type impurities in the second semiconductor portion.

[0098] (Note 7)

[0099] The semiconductor device according to any one of Supplementary Notes 1 to 6, wherein:

[0100] A portion of the third semiconductor portion and a portion of the fourth semiconductor portion are in ohmic contact with the second electrode.

[0101] (Note 8)

[0102] The semiconductor device according to any one of Supplementary Notes 1 to 7, wherein:

[0103] The unit portion includes silicide,

[0104] The silicide is disposed between the first region portion and the second electrode in the first direction, and at least a portion of the silicide is disposed between the first region and the second region in the second direction.

[0105] (Note 9)

[0106] The semiconductor device according to any one of Supplementary Notes 1 to 8, wherein:

[0107] further comprising a fifth semiconductor portion of the first conductivity type,

[0108] The fifth semiconductor portion is disposed between the first electrode and the first semiconductor portion in the first direction,

[0109] A concentration of impurities of the first conductivity type in the fifth semiconductor portion is higher than a concentration of impurities of the first conductivity type in the first semiconductor portion.

[0110] (Note 10)

[0111] The semiconductor device according to any one of Supplementary Notes 1 to 9, wherein:

[0112] The first depth and the second depth correspond to positions in the first direction with respect to the position of the first electrode in the first direction.

[0113] (Note 11)

[0114] The semiconductor device according to any one of Supplementary Notes 1 to 10, wherein:

[0115] The first semiconductor portion, the second semiconductor portion, the third semiconductor portion, and the fourth semiconductor portion include SiC.

[0116] According to the embodiment, a semiconductor device capable of improving a withstand voltage is provided.

[0117] The embodiments of the present invention are described above with reference to specific examples. However, the present invention is not limited to these specific examples. For example, as long as a person skilled in the art appropriately selects the specific structure of each element such as an electrode, a semiconductor part, and an insulating part included in a semiconductor device from the known range and implements the present invention in the same manner, as long as the same effect can be obtained, it is included in the scope of the present invention.

[0118] Furthermore, specific examples in which two or more elements of each specific example are combined within a technically possible range are also included in the scope of the present invention as long as they include the gist of the present invention.

[0119] Furthermore, all semiconductor devices that can be implemented by a person skilled in the art by appropriately designing and modifying the semiconductor device described above as an embodiment of the present invention belong to the scope of the present invention as long as they include the gist of the present invention.

[0120] Furthermore, within the scope of the concept of the present invention, those skilled in the art can conceive of various changes and modifications, and these changes and modifications also belong to the scope of the present invention.

[0121] Several embodiments of the present invention have been described, but these embodiments are presented as examples and are not intended to limit the scope of the invention. These new embodiments can be implemented in various other ways, and various omissions, substitutions, and changes can be made without departing from the scope of the subject matter of the invention. These embodiments and their variations are included in the scope and subject matter of the invention, and are included in the invention described in the claims and the scope of their equivalents.

[0122] [Explanation of Reference Numerals]

[0123] 11 to 14 ... first to fourth semiconductor units,

[0124] 11a to 11c ... first to third semiconductor regions,

[0125] 12a~12e…Parts 1 to 5,

[0126] 13a, 13b ... first and second area parts,

[0127] 14a, 14b… first and second areas,

[0128] 15…Insulation part,

[0129] 16…Fifth semiconductor unit,

[0130] 17a, 17b ... first and second silicide layers,

[0131] 41 ... a first insulating portion,

[0132] 51 to 53 ... first to third electrodes,

[0133] 100, 200, 300... semiconductor devices,

[0134] 110…Unit,

[0135] 120…Terminal

[0136] 130…Connection,

[0137] S2…gap,

[0138] W1…width.

Claims

1. A semiconductor device comprising: a first electrode; a second electrode; A first semiconductor portion of a first conductivity type is provided between the first electrode and the second electrode, and the first semiconductor portion has: a first semiconductor region; a second semiconductor region disposed on the first semiconductor region in the unit portion in a first direction from the first electrode to the second electrode intersecting with a second direction from the unit portion to the terminal portion, and having an impurity concentration of the first conductivity type higher than the impurity concentration of the first conductivity type in the first semiconductor region; as well as a third semiconductor region disposed on the first semiconductor region in the first direction and at the terminal portion, wherein the impurity concentration of the first conductivity type is higher than the impurity concentration of the first conductivity type in the first semiconductor region; as well as A second semiconductor portion of a second conductivity type is provided on the first semiconductor portion, and the second semiconductor portion has, in the unit portion: a first portion at a first depth, a second portion at a second depth shallower than the first depth, and a third portion at the first depth, wherein the first portion, the second portion, and the third portion are disposed on the second semiconductor region in such a manner that the second portion is disposed between the first portion and the third portion, In the terminal portion, a fourth portion of the second semiconductor portion is disposed on the third semiconductor region, The third semiconductor portion of the second conductivity type has: A first area portion, disposed on the first portion, the second portion and the third portion; as well as A second area portion, arranged on the fourth portion; The fourth semiconductor portion of the first conductivity type is disposed on the first portion, the first region portion, and the third portion; as well as The third electrode is disposed between the first portion and the second electrode.

2. The semiconductor device according to claim 1, wherein The third semiconductor region is in Schottky contact with the second electrode.

3. The semiconductor device according to claim 2, wherein: further comprising a connecting portion provided between the unit portion and the terminal portion in the second direction, The second semiconductor portion further includes a fifth portion, The fifth portion is disposed on the first semiconductor region at the connection portion, At least a portion of the fifth portion has a third depth deeper than the first depth.

4. The semiconductor device according to claim 3, wherein: The fifth portion includes a gap.

5. The semiconductor device according to claim 1, wherein further comprising a first insulating portion, At least a portion of the first insulating portion is disposed between the first portion and the third electrode.

6. The semiconductor device according to claim 1, wherein The concentration of the first conductivity type impurity in the fourth semiconductor portion is higher than the concentration of the first conductivity type impurity in the first semiconductor portion. The concentration of the second conductivity type impurities in the third semiconductor portion is higher than the concentration of the second conductivity type impurities in the second semiconductor portion.

7. The semiconductor device according to claim 1, wherein A portion of the third semiconductor portion and a portion of the fourth semiconductor portion are in ohmic contact with the second electrode.

8. The semiconductor device according to claim 1, wherein The first depth and the second depth correspond to positions in the first direction with respect to the position of the first electrode in the first direction.

9. The semiconductor device according to claim 1, wherein: The first semiconductor portion, the second semiconductor portion, the third semiconductor portion, and the fourth semiconductor portion include SiC.

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