Thin film deposition method and semiconductor device

By forming a double-layer film on the inner wall of the process chamber, using the amorphous silicon film to adsorb the particles remaining in the clean gas, and covering the unadsorbed particles through the target film, the problem of raised defects in semiconductor manufacturing is solved, and the yield of semiconductor production is significantly improved.

CN119993908APending Publication Date: 2025-05-13GTA SEMICON CO LTD
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Patent Information

Application Number
CN202510138667.6
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2025-02-07
Publication Date
2025-05-13

AI Technical Summary

Technical Problem

In semiconductor manufacturing, especially at the technical nodes of 65nm and below, tetraethoxysilane-silica composites are prone to protruding defects during the deposition process, resulting in a decrease in yield.

Method used

By forming a double-layer film on the inner wall of the process chamber, the first layer is an amorphous silicon film, which is used to adsorb particles remaining from the cleaning gas, and the second layer is a target film, which is used to cover the amorphous silicon film and the unadsorbed particles on the substrate, thereby reducing the occurrence of raised defects.

Benefits of technology

This greatly reduces the number of raised defects during substrate deposition, improves the yield of semiconductor production, and reduces the risk of short circuit and disconnection of metal connecting wires in subsequent processes.

✦ Generated by Eureka AI based on patent content.

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Abstract

The invention provides a thin film deposition method, which is applied to the technical field of semiconductor manufacturing and comprises the following steps of: cleaning a process chamber by using cleaning gas; depositing an amorphous silicon film on the inner wall of the cleaned process chamber; depositing a target thin film on the amorphous silicon thin film; and after a substrate is placed in the process chamber, depositing the target film on the substrate. Two layers of thin films are formed on the inner wall of a chamber, the first layer of amorphous silicon thin film is rich in silicon dangling bonds, residual particles of clean gas on the inner wall of the chamber can be adsorbed by utilizing the silicon dangling bonds, and the adhesion of the amorphous silicon thin film is beneficial to serving as a middle layer; and the target film on the second layer is the same as the target film to be deposited on the substrate, so that an effect of warming up in advance can be achieved, and particles which are not completely adsorbed by the amorphous silicon film can be covered to reduce defects generated in a substrate deposition process.
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