Power semiconductor device and method of manufacturing the same

By optimizing the field plate structure and electric field distribution, the electrical breakdown problem at the corner of IGBT devices in high-voltage applications was solved, improving the withstand voltage and dielectric breakdown reliability without increasing the process cycle and cost.

CN119997531BActive Publication Date: 2026-07-21GLENFLY TECH CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
GLENFLY TECH CO LTD
Filing Date
2025-02-10
Publication Date
2026-07-21

AI Technical Summary

Technical Problem

In high-voltage applications, existing IGBT devices are prone to electrical breakdown at the corners of the field limiting loop, leading to device failure. Furthermore, optimizing the electric field distribution in existing processes increases the process cycle and cost.

Method used

By optimizing the field plate structure, the substrate is designed to be divided into a cell region and a terminal region. Multiple field ring structures and insulating layers are used. The electrode layer covers the main junction structure and the field ring structure. The potential of the field plate and the field limiting ring is 0 volts. The electric field distribution is changed to reduce the peak value of the surface electric field.

Benefits of technology

This improves the device's withstand voltage and dielectric breakdown reliability while maintaining the existing process cycle and cost.

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Abstract

The application relates to a power semiconductor device and a preparation method thereof. The power semiconductor device comprises a substrate, a main junction structure, a plurality of field ring structures, a first insulating layer and an electrode layer. The substrate comprises a cell region and a terminal region. The main junction structure is located in the cell region. The field ring structure is located in the terminal region. The plurality of field ring structures are isolated and arranged along a first direction. The first direction is a direction in which the cell region points to the terminal region. The plurality of field ring structures comprise at least one first field limiting ring and at least one cutoff ring. The cutoff ring is located on one side of the first field limiting ring along the first direction. The first insulating layer is located on a side of the main junction structure and the field ring structure away from the substrate. The electrode layer is located on a side of the first insulating layer away from the substrate. The electrode layer comprises a first field plate. The first field plate covers a part of the main junction structure close to the field ring structure and at least one first field limiting ring close to the main junction structure. The first field plate is electrically connected with the main junction structure. The technical scheme of the application can improve the withstand voltage capacity and the dielectric breakdown reliability of the device.
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