Semiconductor structure and preparation method thereof
By designing a method including a substrate layer, an N-type drift layer, a P-type main junction, a P-type first doped region and a gate structure in the semiconductor structure, the problem of insufficient electrostatic protection capability during electrostatic discharge is solved, and higher electrostatic protection capability and product stability are achieved.
CN119997614AActive Publication Date: 2025-05-13SICHAIN SEMICONDUCTORS (NINGBO) CO LTD
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Patent Information
- Application Number
- CN202510063520.5
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-01-15
- Publication Date
- 2025-05-13
- Estimated Expiration
- 2045-01-15
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Figure CN119997614A_ABST
Abstract
The invention provides a semiconductor structure and a preparation method thereof. The semiconductor structure comprises a substrate layer; the drift layer comprises an active region, a terminal region and a transition region; the P-type main junction is positioned in the terminal region; the P-type first doped region is located in the transition region, and the doping concentration of the first doped region is smaller than that of the main junction; the gate structure comprises a gate dielectric layer and a gate layer, the gate dielectric layer comprises a first part, a second part and a third part, the second part is located between the first part and the third part in the direction from the active region to the terminal region, the second part is connected with the first part and the third part, the first part is located on the active region, and the second part is located on the transition region; a second part at the bottom of the gate layer covers the first doped region, a third part is located on the main junction, and the thickness of the third part is larger than that of the first part.
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