Bonded structure and semiconductor device

By using a bonding structure composed of the first bonding object, the second bonding object and the intermediate bonding material in the semiconductor device, and using solid-phase bonding technology, the problem of poor heat conduction in the prior art is solved, and more efficient heat conduction and improvement of device performance is achieved.

CN119998947APending Publication Date: 2025-05-13ROHM CO LTD
View PDF 1 Cites 0 Cited by

Patent Information

Application Number
CN202380070372.9
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Priority Date
2022-10-04
Filing Date
2023-09-19
Publication Date
2025-05-13

AI Technical Summary

Technical Problem

The bonding structure of the existing semiconductor device is difficult to effectively conduct heat, which affects the reliability and performance of the device.

Method used

A bonding structure consisting of a first bonding object, a second bonding object and an intermediate bonding material is adopted, wherein the intermediate bonding material has a base material layer and a surface layer, and better heat conduction is achieved through solid phase bonding.

Benefits of technology

More effective heat conduction is achieved, and the reliability and performance of semiconductor devices are improved.

✦ Generated by Eureka AI based on patent content.

Smart Images

  • Figure CN119998947A_ABST
    Figure CN119998947A_ABST
Patent Text Reader

Abstract

A bonded structure is provided with: a first object to be bonded having a first bonding layer; a second object to be bonded having a second bonding layer; and an intermediate bonding material interposed between the first object to be bonded and the second object to be bonded. The intermediate bonding material has: a base material layer; and a first surface layer and a second surface layer disposed on both sides of the substrate layer. The first bonding layer and the first surface layer are bonded by solid phase bonding. The second bonding layer and the second surface layer are bonded by solid phase bonding. The main component of the base material layer is Cu.
Need to check novelty before this filing date? Find Prior Art

Citation Information

Patent Citations

  • Power circuit and power module

    JP2015126342A