Thermal network-based press-pack igbt junction temperature measurement apparatus, method and device

Abstract

The embodiment of the application provides a kind of based on thermal network's crimping type IGBT junction temperature measuring equipment, method and device, method includes: based on the port voltage and the current signal determines the power consumption of single chip in the IGBT device, and according to the power consumption, the energy of the measured elastic crimping sub-module collector and emitter, collector and emitter temperature and the chip junction temperature determines collector and emitter thermal resistance, and according to the power consumption, the energy of the target elastic crimping sub-module collector and emitter, collector and emitter temperature and the collector and emitter thermal resistance determines the chip junction temperature in the target elastic crimping sub-module;The application can solve the problem that chip junction temperature cannot be acquired on-line caused by the tightness of crimping structure.

Description

Technical Field

[0001] This application relates to the field of temperature detection, specifically to a heat network-based press-fit IGBT junction temperature measurement device, method, and apparatus. Background Technology

[0002] Press-fit IGBT modules are power electronic devices designed for high-power and high-reliability applications. They feature a unique double-sided heat dissipation and leadless package structure, enabling effective heat dissipation through both the collector and emitter sides, thereby reducing thermal resistance and increasing heat dissipation efficiency. Due to these design features, press-fit IGBT modules exhibit extremely high reliability and a wide safe operating range in industrial applications. Furthermore, their high power density and short-circuit failure modes allow them to operate reliably even under harsh operating conditions, making them the preferred choice for direct series applications in flexible DC transmission converter valves.

[0003] However, due to the high power density of press-fit IGBT modules, they generate a significant amount of heat during operation. When the module operates for extended periods in environments with high junction temperatures and large temperature fluctuations, the internal chips may age more rapidly, impacting device reliability. Especially under high-temperature operating conditions, it is difficult to effectively reduce the junction temperature, and temperature fluctuations further increase the heat dissipation load, leading to a shortened device lifespan.

[0004] In existing technologies, the heat dissipation capacity of press-fit IGBT modules remains insufficient, and their compact internal structure makes the extraction and analysis of the thermal network difficult. While understanding and optimizing the heat transfer paths between the various material layers and structures within the thermal network can help better manage the device's heat dissipation performance, the compact packaging and complex internal heat transfer paths make it difficult for existing methods to directly obtain an accurate thermal network model. Therefore, current technologies cannot effectively reduce the device's operating junction temperature, limiting the module's current-carrying capacity under high current loads.

[0005] More importantly, the multiple chips in a press-fit IGBT module are typically connected in parallel, and the different heat distributions generated by each chip during operation make junction temperature measurement more complex. Due to the tight packaging and insufficient understanding of the thermal network, existing temperature measurement technologies struggle to accurately measure the junction temperature distribution of each chip online. This makes it difficult for designers to monitor the thermal status of the internal chips in real time and to ensure stable module operation through dynamic adjustments. Summary of the Invention

[0006] To address the problems in the prior art, this application provides a heat network-based press-fit IGBT junction temperature measurement device, method, and apparatus, which can solve the problem that the chip junction temperature cannot be obtained online due to the tight press-fit structure.

[0007] To solve at least one of the above problems, this application provides the following technical solution:

[0008] According to a first aspect of the embodiments of this application, this application provides a heat network-based press-fit IGBT junction temperature measurement device, including a chip temperature measuring thermocouple, an emitter temperature measuring thermocouple, a collector temperature measuring thermocouple, multiple insulating heat insulation boards, a voltage probe, a PCB Rogowski coil, multiple Rogowski coil RF terminals, and a junction temperature measurement unit.

[0009] The chip temperature measuring thermocouple is used to collect the chip junction temperature of a tested elastic compression submodule in the IGBT device, wherein the IGBT device is composed of multiple elastic compression submodules connected in parallel.

[0010] The emitter thermocouple is used to collect the emitter side temperature in the tested elastic compression submodule and the target elastic compression submodule;

[0011] The collector-side thermocouple is used to collect the collector-side temperature in the tested elastic compression submodule and the target elastic compression submodule.

[0012] The plurality of insulating heat insulation boards are disposed between the tested elastic compression submodule and adjacent submodules to form electrothermal isolation;

[0013] The voltage probe is used to collect the port voltages of the collector and emitter in the elastic crimp submodule;

[0014] The PCB Rogowski coil is placed on the current path of the IGBT device to collect current signals from multiple chips in the IGBT device.

[0015] The plurality of Rogowski coil RF terminals are disposed at the output end of the PCB Rogowski coil and are used to transmit the current signals of the multiple chips in the IGBT device to the junction temperature measurement unit.

[0016] The junction temperature measurement unit is used to determine the power consumption of a single chip in the IGBT device based on the port voltage and the current signal, and to determine the collector and emitter thermal resistance based on the power consumption, the energy of the collector and emitter of the tested elastic crimp submodule, the collector and emitter temperatures, and the chip junction temperature. It also determines the chip junction temperature in the target elastic crimp submodule based on the power consumption, the energy of the collector and emitter of the target elastic crimp submodule, the collector and emitter temperatures, and the collector and emitter thermal resistance.

[0017] According to a second aspect of the embodiments of this application, this application provides a method for measuring the junction temperature of a press-fit IGBT based on a thermal network, applied to a junction temperature measurement unit, the method comprising:

[0018] The power consumption of a single chip in the IGBT device is determined based on the port voltage and the current signal.

[0019] The energy of the collector and emitter of the tested elastic crimp submodule is determined based on the power consumption, and the thermal resistance of the collector and emitter is determined based on the energy of the collector and emitter of the tested elastic crimp submodule, the collector and emitter temperatures, and the chip junction temperature.

[0020] The energy of the collector and emitter of the target elastic crimp submodule is determined based on the power consumption, and the chip junction temperature in the target elastic crimp submodule is determined based on the energy of the collector and emitter of the target elastic crimp submodule, the collector and emitter temperatures, and the collector and emitter thermal resistances.

[0021] According to any embodiment of this application, determining the power consumption of a single chip in the IGBT device based on the port voltage and the current signal includes:

[0022] The power consumption of a single chip in the IGBT device is determined using formula (1):

[0023]

[0024] Where P is the power consumption of a single chip in the IGBT device, and V is... ce For the port voltage, I ce The current signal is referred to here.

[0025] According to any embodiment of this application, determining the collector and emitter thermal resistance based on the energy of the collector and emitter of the tested elastic compression submodule, the collector and emitter temperatures, and the chip junction temperature includes:

[0026] The collector and emitter thermal resistances are determined using formulas (2) and (3):

[0027]

[0028] Among them, R th,jc The thermal resistance on the collector side, R th,je The thermal resistance on the emitter side, T j * T is the chip junction temperature of the tested elastic compression submodule. c * T represents the collector-side temperature of the tested elastic compression submodule. e * The emitter-side temperature of the tested elastic compression submodule is given by P. c * P represents the energy transferred to the collector side of the tested elastic compression submodule. e* This refers to the energy transferred to the emitter side of the tested elastic compression submodule.

[0029] According to any embodiment of this application, determining the chip junction temperature in the target elastic crimp submodule based on the energy of the collector and emitter, the temperature of the collector and emitter, and the thermal resistance of the collector and emitter includes:

[0030] The collector and emitter thermal resistances are determined using formulas (4), (5), and (6):

[0031] T j =R th,je ·P e +T e (4)

[0032] T j =R th,jc ·P c +T c (5)

[0033] P = P c +P e (6)

[0034] Among them, T j T is the chip junction temperature of the target elastic compression submodule. c T is the collector-side temperature of the target elastic press-fit submodule. e The emitter-side temperature of the target elastic compression submodule is given by P. c The energy transferred to the collector side of the target elastic press-fit submodule, P e The energy transferred to the emitter side of the target elastic compression submodule.

[0035] According to a third aspect of the embodiments of this application, this application provides a heat network-based press-fit IGBT junction temperature measuring device, applied to the junction temperature measuring unit, the device comprising:

[0036] A power consumption determination module is used to: determine the power consumption of a single chip in the IGBT device based on the port voltage and the current signal;

[0037] A thermal resistance determination module is used to: determine the energy of the collector and emitter of the tested elastic crimp submodule based on the power consumption, and determine the thermal resistance of the collector and emitter based on the energy of the collector and emitter of the tested elastic crimp submodule, the collector and emitter temperatures, and the chip junction temperature;

[0038] The junction temperature determination module is used to: determine the energy of the collector and emitter of the target elastic crimp submodule based on the power consumption, and determine the chip junction temperature in the target elastic crimp submodule based on the energy of the collector and emitter of the target elastic crimp submodule, the collector and emitter temperatures, and the collector and emitter thermal resistances.

[0039] According to any embodiment of this application, the power consumption determination module determines the power consumption of a single chip in the IGBT device based on the port voltage and the current signal, specifically used for:

[0040] The power consumption of a single chip in the IGBT device is determined using formula (1):

[0041]

[0042] Where P is the power consumption of a single chip in the IGBT device, and V is... ce For the port voltage, I ce The current signal is referred to here.

[0043] According to any embodiment of this application, the thermal resistance determination module determines the collector and emitter thermal resistance based on the energy of the collector and emitter of the tested elastic compression submodule, the collector and emitter temperatures, and the chip junction temperature, specifically for:

[0044] The collector and emitter thermal resistances are determined using formulas (2) and (3):

[0045]

[0046]

[0047] Among them, R th,jc The thermal resistance on the collector side, R th,je The thermal resistance on the emitter side, T j * T is the chip junction temperature of the tested elastic compression submodule. c * T represents the collector-side temperature of the tested elastic compression submodule. e * The emitter-side temperature of the tested elastic compression submodule is given by P. c * P represents the energy transferred to the collector side of the tested elastic compression submodule. e * This refers to the energy transferred to the emitter side of the tested elastic compression submodule.

[0048] According to any embodiment of this application, the junction temperature determination module determines the chip junction temperature in the target elastic crimp submodule based on the energy of the collector and emitter, the temperature of the collector and emitter, and the thermal resistance of the collector and emitter, specifically for:

[0049] The chip junction temperature in the target elastic compression submodule is determined using formulas (4), (5), and (6):

[0050] T j =R th,je ·P e +T e (4)

[0051] T j =R th,jc ·P c +T c (5)

[0052] P = P c +P e (6)

[0053] Among them, T j T is the chip junction temperature of the target elastic compression submodule. c T is the collector-side temperature of the target elastic press-fit submodule. e The emitter-side temperature of the target elastic compression submodule is given by P. c The energy transferred to the collector side of the target elastic press-fit submodule, P e The energy transferred to the emitter side of the target elastic compression submodule.

[0054] According to a fourth aspect of the embodiments of this application, this application provides an electronic device, including a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein the processor executes the program to implement the steps of the heat network-based press-fit IGBT junction temperature measurement method.

[0055] According to a fifth aspect of the embodiments of this application, this application provides a computer-readable storage medium having a computer program stored thereon, which, when executed by a processor, implements the steps of the described heat network-based press-fit IGBT junction temperature measurement method.

[0056] According to a sixth aspect of the embodiments of this application, this application provides a computer program product, including a computer program / instructions, which, when executed by a processor, implement the steps of the described heat network-based press-fit IGBT junction temperature measurement method.

[0057] As can be seen from the above technical solutions, this application provides a heat network-based press-fit IGBT junction temperature measurement device, method, and apparatus. It determines the power consumption of a single chip in the IGBT device based on the port voltage and the current signal, and determines the collector and emitter thermal resistance based on the power consumption, the energy of the collector and emitter of the tested elastic press-fit submodule, the collector and emitter temperatures, and the chip junction temperature. Furthermore, it determines the chip junction temperature in the target elastic press-fit submodule based on the power consumption, the energy of the collector and emitter of the target elastic press-fit submodule, the collector and emitter temperatures, and the collector and emitter thermal resistance. This solution addresses the problem of the inability to obtain the chip junction temperature online due to the tight press-fit structure. Attached Figure Description

[0058] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0059] Figure 1 This is a schematic diagram of the IGBT device elastic compression submodule in the embodiments of this application;

[0060] Figure 2 This is a schematic diagram of the equivalent heat transfer network of the IGBT chip structure in the embodiments of this application;

[0061] Figure 3 This is a schematic diagram of the internal thermal network of the press-fit IGBT device in the embodiments of this application;

[0062] Figure 4 This is a schematic diagram of the thermal network extraction device for the press-fit IGBT device in the embodiments of this application;

[0063] Figure 5 This is a schematic diagram of the online junction temperature measurement device for the press-fit IGBT device in the embodiments of this application;

[0064] Figure 6 This is a flowchart illustrating the heat network-based press-fit IGBT junction temperature measurement method in an embodiment of this application.

[0065] Figure 7 This is a structural diagram of the heat network-based press-fit IGBT junction temperature measurement device in the embodiments of this application;

[0066] Figure 8 This is a schematic diagram of the structure of the electronic device in the embodiments of this application. Detailed Implementation

[0067] To make the objectives, technical solutions, and advantages of the embodiments of this application clearer, the technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0068] The acquisition, storage, use, and processing of data in this application all comply with the relevant provisions of national laws and regulations.

[0069] Considering the difficulty of accurately measuring the junction temperature distribution of each chip online due to the tightness of the packaging and insufficient understanding of the thermal network, this application provides a heat network-based press-fit IGBT junction temperature measurement device, method, and apparatus to solve the problem that the chip junction temperature cannot be obtained online due to the tight press-fit structure.

[0070] like Figure 1 As shown, due to its repetitive parallel structure, the elastic pressing structure of a single chip can be approximated as equivalent to that of a press-fit IGBT device.

[0071] In this structure, 1 is the molybdenum collector sheet of the press-fit IGBT, 2 is the IGBT chip, 3 is the molybdenum emitter sheet, 4 is a silver sheet, 5 is a copper pillar, 6 is a copper sheet, 7 is a disc spring, 8 is a metal conductive strip, and 9 is the emitter metal electrode. When pressure is applied to both ends of the device, the tight press-fit between these components creates good electrical and thermal conductivity. 1 and 2 are sintered metal contacts; 2 and 3 are connected by pressure contact, forming the chip's contact thermal resistance and contact resistance; 3 and 4 are connected by pressure between two different metals. 4 and 5 involve the contact between the spring and the chip structure; 7 contains multiple disc springs stacked alternately to maintain good pressure uniformity. 8 and 7 are connected in parallel in the electrical and thermal path.

[0072] To better characterize the heat transfer path of the IGBT press-fit structure, this application equates the heat transfer body and heat transfer contact surface in the above-mentioned elastic press-fit structure to a double-sided heat transfer network with the chip as the heat source, mainly characterizing the thermal resistance and heat capacity of different structures.

[0073] like Figure 2As shown, 10 is the chip heat source with bidirectional thermal potential, 11 is the thermal structure of the solder layer on the chip collector side, 12 is the bulk thermal structure of the collector molybdenum sheet, 13 is the contact thermal structure between the chip and the emitter molybdenum sheet, 14 is the bulk thermal structure of the emitter molybdenum sheet, 15 is the contact thermal structure between the emitter molybdenum sheet and the silver sheet, 16 is the bulk thermal structure of the silver sheet, 17 is the contact thermal structure between the silver sheet and the copper pillar, 18 is the bulk thermal structure of the copper pillar, 19 is the bulk thermal structure of the conductive strip, 20 is the series bulk thermal structure of each disc spring, 21 is the contact thermal structure between each disc spring, and 22 is the bulk thermal structure of the emitter metal electrode.

[0074] In a typical press-fit IGBT device, multiple sub-modules are connected in parallel. Each sub-module encapsulates multiple IGBT elastic press-fit sub-modules. Figure 2 The thermal networks on both sides of the collector and emitter are simplified and equivalently reduced to thermal resistance and thermal capacity structures, respectively, resulting in the internal thermal network of the press-fit IGBT as follows: Figure 3 As shown in the diagram. 23 represents the thermal network of a multi-chip parallel submodule m, 24 represents the thermal network of a multi-chip parallel submodule n, 25 represents the thermal network of a certain elastic compression structure inside submodule m, and 26 represents a heat source for a certain chip inside submodule n. Under normal current-carrying conditions, the conduction and switching losses of the chip cause significant heat generation, raising the junction temperature on the chip surface. This creates a thermal potential difference relative to the device surface, leading to heat transfer on both sides. When the device's heating stabilizes, a junction temperature difference is formed between the chip junction temperature and the device surface.

[0075] To accurately measure the internal thermal network characteristics of press-fit IGBT modules, it is necessary to measure and analyze the thermal network under actual conditions. Based on the previously established thermal network model, we can gain a preliminary understanding of how heat is transferred between the various layers of materials and structures within the module, thus enabling better management of chip heat dissipation.

[0076] In press-fit IGBT modules, multiple IGBT chips typically operate in parallel, with the collector side of each chip connected together via a sintering process, while sharing a common gate control circuit. Because the electrical and thermal conduction paths of these chips on the collector side are interconnected, this tight connection makes it impossible to operate or separate the collector terminals of each chip independently, thus increasing the difficulty of measuring the thermal characteristics of individual chips.

[0077] To address the issue of inability to obtain chip junction temperatures online due to the tight press-fit structure, this application provides an embodiment of a press-fit IGBT junction temperature measurement device based on a thermal network. Specifically, this device separates the operating states of each IGBT chip by altering the structure on the emitter side. Specifically, an insulating layer or specific thermal insulation material is introduced on the emitter side, effectively isolating each chip along the electrothermal conduction path. This allows for the individual measurement of the thermal characteristics of each chip, such as thermal resistance and junction temperature, without affecting the normal operation of the entire module.

[0078] In an optional embodiment, the heat network-based press-fit IGBT junction temperature measurement device includes a chip temperature measuring thermocouple, an emitter temperature measuring thermocouple, a collector temperature measuring thermocouple, multiple insulating heat insulation boards, a voltage probe, a PCB Rogowski coil, multiple Rogowski coil RF terminals, and a junction temperature measurement unit.

[0079] The chip temperature measuring thermocouple is used to collect the chip junction temperature of a tested elastic compression submodule in the IGBT device, wherein the IGBT device is composed of multiple elastic compression submodules connected in parallel.

[0080] The emitter thermocouple is used to collect the emitter side temperature in the tested elastic compression submodule and the target elastic compression submodule;

[0081] The collector-side thermocouple is used to collect the collector-side temperature in the tested elastic compression submodule and the target elastic compression submodule.

[0082] The plurality of insulating heat insulation boards are disposed between the tested elastic compression submodule and adjacent submodules to form electrothermal isolation;

[0083] The voltage probe is used to collect the port voltages of the collector and emitter in the elastic crimp submodule;

[0084] The PCB Rogowski coil is placed on the current path of the IGBT device to collect current signals from multiple chips in the IGBT device.

[0085] The plurality of Rogowski coil RF terminals are disposed at the output end of the PCB Rogowski coil and are used to transmit the current signals of the multiple chips in the IGBT device to the junction temperature measurement unit.

[0086] For example, such as Figure 4As shown, the thermal networks on both the collector and emitter sides of the IGBT chip's elastic compression structure selected by the dashed box are extracted. To separate the selected structure in a multi-chip parallel submodule, an insulating heat-insulating plate needs to be added without affecting the multi-physics field of the chip under test, thus providing electrothermal isolation between the other chip structures and the chip under test. 27 and 29-32 are Teflon plates of the same thickness as the silver sheet on the emitter side; 28 is the silver sheet of the device under test; 33 is the thermocouple at the corresponding point on the emitter side; 34 is the chip thermocouple; and 35 is the thermocouple at the corresponding point on the collector side.

[0087] Figure 5 This is a schematic diagram of the junction temperature measurement of multiple chips inside a press-fit IGBT device. 36 is a sub-module of the press-fit IGBT device, 37 is a PCB Rogowski coil, 38 is the RF terminal of the Rogowski coil of 8 IGBT chips, and 39 and 40 are the RF terminals of the Rogowski coil of 4 anti-parallel diodes.

[0088] The junction temperature measurement unit is used to determine the power consumption of a single chip in the IGBT device based on the port voltage and the current signal, and to determine the collector and emitter thermal resistance based on the power consumption, the energy of the collector and emitter of the tested elastic crimp submodule, the collector and emitter temperatures, and the chip junction temperature. It also determines the chip junction temperature in the target elastic crimp submodule based on the power consumption, the energy of the collector and emitter of the target elastic crimp submodule, the collector and emitter temperatures, and the collector and emitter thermal resistance.

[0089] To address the issue of inability to obtain chip junction temperature online due to the tight press-fit structure, this application provides an embodiment of a press-fit IGBT junction temperature measurement method based on a thermal network, applied to a junction temperature measurement unit, such as... Figure 6 As shown, it includes:

[0090] Step S101: Determine the power consumption of a single chip in the IGBT device based on the port voltage and the current signal;

[0091] Step S102: Determine the energy of the collector and emitter of the tested elastic crimp submodule based on the power consumption, and determine the thermal resistance of the collector and emitter based on the energy of the collector and emitter of the tested elastic crimp submodule, the collector and emitter temperatures, and the chip junction temperature;

[0092] Step S103: Determine the energy of the collector and emitter of the target elastic crimp submodule based on the power consumption, and determine the chip junction temperature in the target elastic crimp submodule based on the energy of the collector and emitter of the target elastic crimp submodule, the temperature of the collector and emitter, and the thermal resistance of the collector and emitter.

[0093] In an optional embodiment, determining the power consumption of a single chip in the IGBT device based on the port voltage and the current signal includes:

[0094] The power consumption of a single chip in the IGBT device is determined using formula (1):

[0095]

[0096] Where P is the power consumption of a single chip in the IGBT device, and V is... ce For the port voltage, I ce The current signal is referred to here.

[0097] Specifically, when the device is in operation, a voltage probe is used to monitor the collector-emitter port voltage of the device online, and a PCB Rogowski coil is used to monitor the current Ic flowing through multiple chips. The power consumption P of a single chip in each cycle is calculated, thereby obtaining the steady-state heat generation of each chip.

[0098]

[0099] In an optional embodiment, determining the collector and emitter thermal resistance based on the energy of the collector and emitter of the tested elastic compression submodule, the collector and emitter temperatures, and the chip junction temperature includes:

[0100] The collector and emitter thermal resistances are determined using formulas (2) and (3):

[0101]

[0102] Among them, R th,jc The thermal resistance on the collector side, R th,je The thermal resistance on the emitter side, T j * T is the chip junction temperature of the tested elastic compression submodule. c * T represents the collector-side temperature of the tested elastic compression submodule. e * The emitter-side temperature of the tested elastic compression submodule is given by P. c * P represents the energy transferred to the collector side of the tested elastic compression submodule. e * This refers to the energy transferred to the emitter side of the tested elastic compression submodule.

[0103] In determining the energy of the collector and emitter of the tested elastic compression submodule based on the power consumption, formula (1) and an empirical formula for when the collector-side temperature is equal to the emitter temperature can be used: P = Pc *+P e * Obtain the energy P of the collector and emitter of the tested elastic compression submodule. c * and P e * .

[0104] The proposed thermal resistance extraction method can be used to calculate the thermal resistance of all chips within a press-fit IGBT device submodule. Under steady-state operating conditions, the heat diffusion time within the device is significantly longer than the relaxation time of each element in the thermal network, meaning the time required for heat transfer between different elements to reach equilibrium is shorter. Therefore, the entire heat transfer process tends to stabilize, and the heat distribution along the transfer paths within the chips and module gradually reaches a stable thermal equilibrium. In this case, the complex thermal network can be simplified into an equivalent thermal resistance network model to describe the overall characteristics of the heat conduction path.

[0105] In an optional embodiment, determining the chip junction temperature in the target flexible crimp submodule based on the energy of the collector and emitter, the temperature of the collector and emitter, and the thermal resistance of the collector and emitter includes:

[0106] The collector and emitter thermal resistances are determined using formulas (4), (5), and (6):

[0107] T j =R th,je ·P e +T e (4)

[0108] T j =R th,jc ·P c +T c (5)

[0109] P = P c +P e (6)

[0110] Among them, T j T is the chip junction temperature of the target elastic compression submodule. c T is the collector-side temperature of the target elastic press-fit submodule. e The emitter-side temperature of the target elastic compression submodule is given by P. c The energy transferred to the collector side of the target elastic press-fit submodule, P e The energy transferred to the emitter side of the target elastic compression submodule.

[0111] In this application, the multi-physics fields (such as thermal and electric fields) inside the press-fit IGBT device can be approximated as uniformly distributed during analysis. This means that under steady-state operation, the environmental conditions of each chip are relatively uniform, and local differences will not significantly affect the overall heat conduction effect. Under these steady-state conditions, the coupling effect between different physical fields can be ignored, i.e., it is assumed that each physical field operates independently without interfering with each other. By calculating the power consumption P of each chip, the heat generated by the chip can be estimated, thereby deriving the junction temperature. When the temperatures of corresponding points on the collector and emitter of different chips are monitored in real time during device operation, these measured temperature values ​​can be substituted into the formula to calculate the junction temperature level of each chip.

[0112] As described above, this application innovatively solves the thermal management challenge of multi-chip parallel structures in press-fit IGBT modules. First, it details the internal thermal network of the press-fit IGBT module and simulates the heat diffusion paths between chips, aiding in a deeper understanding of the chip's heat conduction process. Second, the experimental method proposed in this application can extract the thermal network of multiple chips within a compactly packaged press-fit IGBT module without disrupting the multiphysics environment inside the chip under test, solving the technical challenge of measuring the thermal network due to its compact structure. Finally, this application establishes an online measurement method based on the thermal network model. By acquiring the steady-state junction temperature of the parallel chips in real time during module operation, it overcomes the limitation of traditional methods in monitoring chip junction temperature online, effectively improving the module's reliability and thermal management capabilities, and providing strong support for the application of high-performance press-fit IGBTs.

[0113] To address the issue of the inability to obtain chip junction temperature online due to the tight press-fit structure, this application provides an embodiment of a heat network-based press-fit IGBT junction temperature measurement device for implementing all or part of the aforementioned heat network-based press-fit IGBT junction temperature measurement method. See [link to embodiment]. Figure 7 The heat network-based press-fit IGBT junction temperature measurement device is applied to the junction temperature measurement unit, and the device includes:

[0114] The power consumption determination module 1101 is used to: determine the power consumption of a single chip in the IGBT device based on the port voltage and the current signal;

[0115] The thermal resistance determination module 1102 is used to: determine the energy of the collector and emitter of the tested elastic crimp submodule based on the power consumption, and determine the thermal resistance of the collector and emitter based on the energy of the collector and emitter of the tested elastic crimp submodule, the collector and emitter temperatures, and the chip junction temperature.

[0116] Junction temperature determination module 1103 is used to: determine the energy of the collector and emitter of the target elastic crimp submodule based on the power consumption, and determine the chip junction temperature in the target elastic crimp submodule based on the energy of the collector and emitter of the target elastic crimp submodule, the collector and emitter temperatures, and the collector and emitter thermal resistances.

[0117] According to any embodiment of this application, the power consumption determination module determines the power consumption of a single chip in the IGBT device based on the port voltage and the current signal, specifically used for:

[0118] The power consumption of a single chip in the IGBT device is determined using formula (1):

[0119]

[0120] Where P is the power consumption of a single chip in the IGBT device, and V is... ce For the port voltage, I ce The current signal is referred to here.

[0121] According to any embodiment of this application, the thermal resistance determination module determines the collector and emitter thermal resistance based on the energy of the collector and emitter of the tested elastic compression submodule, the collector and emitter temperatures, and the chip junction temperature, specifically for:

[0122] The collector and emitter thermal resistances are determined using formulas (2) and (3):

[0123]

[0124] Among them, R th,jc The thermal resistance on the collector side, R th,je The thermal resistance on the emitter side, T j * T is the chip junction temperature of the tested elastic compression submodule. c * T represents the collector-side temperature of the tested elastic compression submodule. e * The emitter-side temperature of the tested elastic compression submodule is given by P. c * P represents the energy transferred to the collector side of the tested elastic compression submodule. e * This refers to the energy transferred to the emitter side of the tested elastic compression submodule.

[0125] According to any embodiment of this application, the junction temperature determination module determines the chip junction temperature in the target elastic crimp submodule based on the energy of the collector and emitter, the temperature of the collector and emitter, and the thermal resistance of the collector and emitter, specifically for:

[0126] The chip junction temperature in the target elastic compression submodule is determined using formulas (4), (5), and (6):

[0127] T j =R th,je ·P e +T e (4)

[0128] T j =R th,jc ·P c +T c (5)

[0129] P = P c +P e (6)

[0130] Among them, T j T is the chip junction temperature of the target elastic compression submodule. c T is the collector-side temperature of the target elastic press-fit submodule. e The emitter-side temperature of the target elastic compression submodule is given by P. c The energy transferred to the collector side of the target elastic press-fit submodule, P e The energy transferred to the emitter side of the target elastic compression submodule.

[0131] According to a fourth aspect of the embodiments of this application, this application provides an electronic device, including a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein the processor executes the program to implement the steps of the heat network-based press-fit IGBT junction temperature measurement method.

[0132] According to a fifth aspect of the embodiments of this application, this application provides a computer-readable storage medium having a computer program stored thereon, which, when executed by a processor, implements the steps of the described heat network-based press-fit IGBT junction temperature measurement method.

[0133] According to a sixth aspect of the embodiments of this application, this application provides a computer program product, including a computer program / instructions, which, when executed by a processor, implement the steps of the described heat network-based press-fit IGBT junction temperature measurement method.

[0134] From a hardware perspective, in order to solve the problem that the chip junction temperature cannot be obtained online due to the tight press-fit structure, this application provides an embodiment of an electronic device for implementing all or part of the above-mentioned thermal network-based press-fit IGBT junction temperature measurement method. The electronic device specifically includes the following:

[0135] The system comprises a processor, memory, a communications interface, and a bus; wherein the processor, memory, and communications interface communicate with each other via the bus; the communications interface is used to realize information transmission between the heat network-based press-fit IGBT junction temperature measurement device and core business systems, user terminals, and related databases and other related devices; the logic controller can be a desktop computer, tablet computer, or mobile terminal, etc., and this embodiment is not limited to these. In this embodiment, the logic controller can be implemented with reference to the embodiments of the heat network-based press-fit IGBT junction temperature measurement method and the heat network-based press-fit IGBT junction temperature measurement device, the contents of which are incorporated herein by reference, and repeated details will not be described again.

[0136] It is understood that the user terminal may include smartphones, tablet computers, network set-top boxes, portable computers, desktop computers, personal digital assistants (PDAs), in-vehicle devices, smart wearable devices, etc. Among these, the smart wearable devices may include smart glasses, smartwatches, smart bracelets, etc.

[0137] In practical applications, the heat network-based press-fit IGBT junction temperature measurement method can be partially executed on the electronic device side as described above, or all operations can be completed in the client device. The choice can be made based on the processing power of the client device and the limitations of the user's usage scenario. This application does not impose any limitations on this. If all operations are completed in the client device, the client device may further include a processor.

[0138] The aforementioned client device may have a communication module (i.e., a communication unit) that can communicate with a remote server to achieve data transmission. The server may include a server on the task scheduling center side; in other implementation scenarios, it may also include a server on an intermediate platform, such as a server on a third-party server platform that has a communication link with the task scheduling center server. The server may include a single computer device, a server cluster consisting of multiple servers, or a distributed server structure.

[0139] Figure 8 This is a schematic block diagram illustrating the system configuration of the electronic device 9600 according to an embodiment of this application. Figure 8 As shown, the electronic device 9600 may include a central processing unit 9100 and a memory 9140; the memory 9140 is coupled to the central processing unit 9100. It is worth noting that... Figure 8 This is an example; other types of structures can also be used to supplement or replace this structure to achieve telecommunications functions or other functions.

[0140] In one embodiment, the function of the heat network-based press-fit IGBT junction temperature measurement method can be integrated into the central processing unit 9100. The central processing unit 9100 can be configured to perform the following control:

[0141] Step S101: Determine the power consumption of a single chip in the IGBT device based on the port voltage and the current signal;

[0142] Step S102: Determine the energy of the collector and emitter of the tested elastic crimp submodule based on the power consumption, and determine the thermal resistance of the collector and emitter based on the energy of the collector and emitter of the tested elastic crimp submodule, the collector and emitter temperatures, and the chip junction temperature;

[0143] Step S103: Determine the energy of the collector and emitter of the target elastic crimp submodule based on the power consumption, and determine the chip junction temperature in the target elastic crimp submodule based on the energy of the collector and emitter of the target elastic crimp submodule, the temperature of the collector and emitter, and the thermal resistance of the collector and emitter.

[0144] As can be seen from the above description, the electronic device provided in this application embodiment solves the problem that the chip junction temperature cannot be obtained online due to the tight press-fit structure.

[0145] In another embodiment, the heat network-based press-fit IGBT junction temperature measurement device can be configured separately from the central processing unit 9100. For example, the heat network-based press-fit IGBT junction temperature measurement device can be configured as a chip connected to the central processing unit 9100, and the function of the heat network-based press-fit IGBT junction temperature measurement method can be realized through the control of the central processing unit.

[0146] like Figure 8 As shown, the electronic device 9600 may further include: a communication module 9110, an input unit 9120, an audio processor 9130, a display 9160, and a power supply 9170. It is worth noting that the electronic device 9600 does not necessarily need to include these components. Figure 8 All components shown; in addition, the electronic device 9600 may also include Figure 8 For components not shown, please refer to existing technologies.

[0147] like Figure 8As shown, the central processing unit 9100, sometimes also referred to as a controller or operating control, may include a microprocessor or other processor device and / or logic device, which receives inputs and controls the operation of various components of the electronic device 9600.

[0148] The memory 9140 may be, for example, one or more of a cache, flash memory, hard drive, removable media, volatile memory, non-volatile memory, or other suitable devices. It may store the aforementioned failure-related information, and also store a program for executing that information. The central processing unit 9100 may execute the program stored in the memory 9140 to perform information storage or processing, etc.

[0149] Input unit 9120 provides input to central processing unit 9100. Input unit 9120 may be, for example, a keypad or touch input device. Power supply 9170 provides power to electronic device 9600. Display 9160 displays images and text. Display may be, for example, an LCD display, but is not limited thereto.

[0150] The memory 9140 can be a solid-state memory, such as a read-only memory (ROM), random access memory (RAM), a SIM card, etc. It can also be a memory that retains information even when power is off, can be selectively erased, and contains more data; examples of this type of memory are sometimes referred to as EPROMs. The memory 9140 can also be some other type of device. The memory 9140 includes a buffer memory 9141 (sometimes referred to as a buffer). The memory 9140 may include an application / function storage unit 9142 for storing application programs and function programs or processes for executing the operation of the electronic device 9600 via the central processing unit 9100.

[0151] The memory 9140 may also include a data storage unit 9143 for storing data, such as contacts, digital data, pictures, sounds, and / or any other data used by the electronic device. The driver storage unit 9144 of the memory 9140 may include various drivers for the electronic device's communication functions and / or for performing other functions of the electronic device (such as messaging applications, address book applications, etc.).

[0152] The communication module 9110 is a transmitter / receiver 9110 that transmits and receives signals via the antenna 9111. The communication module (transmitter / receiver) 9110 is coupled to the central processing unit 9100 to provide input signals and receive output signals, which can be the same as in a conventional mobile communication terminal.

[0153] Based on different communication technologies, multiple communication modules 9110 can be configured in the same electronic device, such as cellular network modules, Bluetooth modules, and / or wireless LAN modules. The communication module (transmitter / receiver) 9110 is also coupled to a speaker 9131 and a microphone 9132 via an audio processor 9130 to provide audio output via the speaker 9131 and receive audio input from the microphone 9132, thereby realizing typical telecommunications functions. The audio processor 9130 may include any suitable buffer, decoder, amplifier, etc. Additionally, the audio processor 9130 is coupled to a central processing unit 9100, enabling on-device recording via the microphone 9132 and on-device playback of stored sound via the speaker 9131.

[0154] Embodiments of this application also provide a computer-readable storage medium capable of implementing all steps of the thermal network-based press-fit IGBT junction temperature measurement method with a server or client as the execution subject in the above embodiments. The computer-readable storage medium stores a computer program that, when executed by a processor, implements all steps of the thermal network-based press-fit IGBT junction temperature measurement method with a server or client as the execution subject in the above embodiments. For example, when the processor executes the computer program, it implements the following steps:

[0155] Step S101: Determine the power consumption of a single chip in the IGBT device based on the port voltage and the current signal;

[0156] Step S102: Determine the energy of the collector and emitter of the tested elastic crimp submodule based on the power consumption, and determine the thermal resistance of the collector and emitter based on the energy of the collector and emitter of the tested elastic crimp submodule, the collector and emitter temperatures, and the chip junction temperature;

[0157] Step S103: Determine the energy of the collector and emitter of the target elastic crimp submodule based on the power consumption, and determine the chip junction temperature in the target elastic crimp submodule based on the energy of the collector and emitter of the target elastic crimp submodule, the temperature of the collector and emitter, and the thermal resistance of the collector and emitter.

[0158] As can be seen from the above description, the computer-readable storage medium provided in the embodiments of this application solves the problem that the chip junction temperature cannot be obtained online due to the tight press-fit structure.

[0159] Embodiments of this application also provide a computer program product capable of implementing all steps in the thermal network-based press-fit IGBT junction temperature measurement method described above, where the execution subject is a server or client. When executed by a processor, this computer program / instruction implements the steps of the thermal network-based press-fit IGBT junction temperature measurement method. For example, the computer program / instruction implements the following steps:

[0160] Step S101: Determine the power consumption of a single chip in the IGBT device based on the port voltage and the current signal;

[0161] Step S102: Determine the energy of the collector and emitter of the tested elastic crimp submodule based on the power consumption, and determine the thermal resistance of the collector and emitter based on the energy of the collector and emitter of the tested elastic crimp submodule, the collector and emitter temperatures, and the chip junction temperature;

[0162] Step S103: Determine the energy of the collector and emitter of the target elastic crimp submodule based on the power consumption, and determine the chip junction temperature in the target elastic crimp submodule based on the energy of the collector and emitter of the target elastic crimp submodule, the temperature of the collector and emitter, and the thermal resistance of the collector and emitter.

[0163] As can be seen from the above description, the computer program product provided in this application embodiment solves the problem that the chip junction temperature cannot be obtained online due to the tight press-fit structure.

[0164] Those skilled in the art will understand that embodiments of the present invention can be provided as methods, apparatus, or computer program products. Therefore, the present invention can take the form of a completely hardware embodiment, a completely software embodiment, or an embodiment combining software and hardware aspects. Furthermore, the present invention can take the form of a computer program product embodied on one or more computer-usable storage media (including, but not limited to, disk storage, CD-ROM, optical storage, etc.) containing computer-usable program code.

[0165] This invention is described with reference to flowchart illustrations and / or block diagrams of methods, apparatus (devices), and computer program products according to embodiments of the invention. It will be understood that each block of the flowchart illustrations and / or block diagrams, and combinations of blocks in the flowchart illustrations and / or block diagrams, can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, special-purpose computer, embedded processor, or other programmable data processing apparatus to produce a machine, such that the instructions, which execute via the processor of the computer or other programmable data processing apparatus, generate instructions for implementing the flowchart illustrations and / or block diagrams. Figure 1 One or more processes and / or boxes Figure 1 A device that provides the functions specified in one or more boxes.

[0166] These computer program instructions may also be stored in a computer-readable storage medium that can direct a computer or other programmable data processing device to function in a particular manner, such that the instructions stored in the computer-readable storage medium produce an article of manufacture including instruction means, which are implemented in a process Figure 1 One or more processes and / or boxes Figure 1 The function specified in one or more boxes.

[0167] These computer program instructions may also be loaded onto a computer or other programmable data processing equipment to cause a series of operational steps to be performed on the computer or other programmable equipment to produce a computer-implemented process, thereby providing instructions that execute on the computer or other programmable equipment for implementing the process. Figure 1 One or more processes and / or boxes Figure 1 The steps of the function specified in one or more boxes.

[0168] Specific embodiments have been used to illustrate the principles and implementation methods of this invention. The descriptions of the embodiments above are only for the purpose of helping to understand the method and core ideas of this invention. At the same time, for those skilled in the art, there will be changes in the specific implementation methods and application scope based on the ideas of this invention. Therefore, the content of this specification should not be construed as a limitation of this invention.

Claims

1. A pressure-fit IGBT junction temperature measurement device based on a thermal network, characterized in that, Includes chip temperature measuring thermocouple, emitter temperature measuring thermocouple, collector temperature measuring thermocouple, multiple insulating heat insulation boards, voltage probe, PCB Rogowski coil, multiple Rogowski coil RF terminals and junction temperature measurement unit; The chip temperature measuring thermocouple is used to collect the chip junction temperature of a tested elastic compression submodule in the IGBT device, wherein the IGBT device is composed of multiple elastic compression submodules connected in parallel. The emitter thermocouple is used to collect the emitter side temperature in the tested elastic compression submodule and the target elastic compression submodule; The collector-side thermocouple is used to collect the collector-side temperature in the tested elastic compression submodule and the target elastic compression submodule. The plurality of insulating heat insulation boards are disposed between the tested elastic compression submodule and adjacent submodules to form electrothermal isolation; The voltage probe is used to collect the port voltages of the collector and emitter in the elastic crimp submodule; The PCB Rogowski coil is placed on the current path of the IGBT device to collect current signals from multiple chips in the IGBT device. The plurality of Rogowski coil RF terminals are disposed at the output end of the PCB Rogowski coil and are used to transmit the current signals of the multiple chips in the IGBT device to the junction temperature measurement unit. The junction temperature measurement unit is used to determine the power consumption of a single chip in the IGBT device based on the port voltage and the current signal, and to determine the collector and emitter thermal resistance based on the power consumption, the energy of the collector and emitter of the tested elastic crimp submodule, the collector and emitter temperatures, and the chip junction temperature. It also determines the chip junction temperature in the target elastic crimp submodule based on the power consumption, the energy of the collector and emitter of the target elastic crimp submodule, the collector and emitter temperatures, and the collector and emitter thermal resistance.

2. A method for measuring the junction temperature of a press-fit IGBT based on a thermal network, characterized in that, The method, applied to the junction temperature measurement unit of claim 1, comprises: The power consumption of a single chip in the IGBT device is determined based on the port voltage and the current signal. The energy of the collector and emitter of the tested elastic crimp submodule is determined based on the power consumption, and the thermal resistance of the collector and emitter is determined based on the energy of the collector and emitter of the tested elastic crimp submodule, the collector and emitter temperatures, and the chip junction temperature. The energy of the collector and emitter of the target elastic crimp submodule is determined based on the power consumption, and the chip junction temperature in the target elastic crimp submodule is determined based on the energy of the collector and emitter of the target elastic crimp submodule, the collector and emitter temperatures, and the collector and emitter thermal resistances.

3. The method for measuring the junction temperature of a press-fit IGBT based on a thermal network according to claim 2, characterized in that, The step of determining the power consumption of a single chip in the IGBT device based on the port voltage and the current signal includes: The power consumption of a single chip in the IGBT device is determined using formula (1): Where P is the power consumption of a single chip in the IGBT device, and V is... ce For the port voltage, I ce The current signal is referred to here.

4. The method for measuring the junction temperature of a press-fit IGBT based on a thermal network according to claim 2, characterized in that, The determination of collector and emitter thermal resistance based on the energy of the collector and emitter of the tested elastic compression submodule, the collector and emitter temperatures, and the chip junction temperature includes: The collector and emitter thermal resistances are determined using formulas (2) and (3): Among them, R th,jc The thermal resistance on the collector side, R th,je The thermal resistance on the emitter side, T j * T is the chip junction temperature of the tested elastic compression submodule. c * T represents the collector-side temperature of the tested elastic compression submodule. e * The emitter-side temperature of the tested elastic compression submodule is given by P. c * P represents the energy transferred to the collector side of the tested elastic compression submodule. e * This refers to the energy transferred to the emitter side of the tested elastic compression submodule.

5. The method for measuring the junction temperature of a press-fit IGBT based on a thermal network according to claim 2, characterized in that, The step of determining the chip junction temperature in the target elastic crimp submodule based on the energy, temperature, and thermal resistance of the collector and emitter of the target elastic crimp submodule includes: The collector and emitter thermal resistances are determined using formulas (4), (5), and (6): T j =R th,je ·P e +T e (4) T j =R th,jc ·P c +T c (5) P=P c +P e (6) Among them, T j T is the chip junction temperature of the target elastic compression submodule. c T is the collector-side temperature of the target elastic press-fit submodule. e The emitter-side temperature of the target elastic compression submodule is given by P. c The energy transferred to the collector side of the target elastic press-fit submodule, P e The energy transferred to the emitter side of the target elastic compression submodule.

6. A heat network-based press-fit IGBT junction temperature measurement device, characterized in that, The device, applied to the junction temperature measurement unit of claim 1, comprises: A power consumption determination module is used to: determine the power consumption of a single chip in the IGBT device based on the port voltage and the current signal; A thermal resistance determination module is used to: determine the energy of the collector and emitter of the tested elastic crimp submodule based on the power consumption, and determine the thermal resistance of the collector and emitter based on the energy of the collector and emitter of the tested elastic crimp submodule, the collector and emitter temperatures, and the chip junction temperature; The junction temperature determination module is used to: determine the energy of the collector and emitter of the target elastic crimp submodule based on the power consumption, and determine the chip junction temperature in the target elastic crimp submodule based on the energy of the collector and emitter of the target elastic crimp submodule, the collector and emitter temperatures, and the collector and emitter thermal resistances.

7. The heat network-based press-fit IGBT junction temperature measuring device according to claim 6, characterized in that, The power consumption determination module determines the power consumption of a single chip in the IGBT device based on the port voltage and the current signal, specifically for: The power consumption of a single chip in the IGBT device is determined using formula (1): Where P is the power consumption of a single chip in the IGBT device, and V is... ce For the port voltage, I ce The current signal is referred to here.

8. The heat network-based press-fit IGBT junction temperature measuring device according to claim 6, characterized in that, The thermal resistance determination module determines the collector and emitter thermal resistance based on the energy, temperature, and junction temperature of the collector and emitter of the tested elastic compression submodule, and specifically for: The collector and emitter thermal resistances are determined using formulas (2) and (3): Among them, R th,jc The thermal resistance on the collector side, R th,je The thermal resistance on the emitter side, T j * T is the chip junction temperature of the tested elastic compression submodule. c * T represents the collector-side temperature of the tested elastic compression submodule. e * The emitter-side temperature of the tested elastic compression submodule is given by P. c * P represents the energy transferred to the collector side of the tested elastic compression submodule. e * This refers to the energy transferred to the emitter side of the tested elastic compression submodule.

9. The heat network-based press-fit IGBT junction temperature measuring device according to claim 6, characterized in that, The junction temperature determination module determines the chip junction temperature in the target elastic compression module based on the energy, temperature, and thermal resistance of the collector and emitter of the target elastic compression submodule. Specifically, it is used for: The chip junction temperature in the target elastic compression submodule is determined using formulas (4), (5), and (6): T j =R th,je ·P e +T e (4) T j =R th,jc ·P c +T c (5) P=P c +P e (6) Among them, T j T is the chip junction temperature of the target elastic compression submodule. c T is the collector-side temperature of the target elastic press-fit submodule. e The emitter-side temperature of the target elastic compression submodule is given by P. c The energy transferred to the collector side of the target elastic press-fit submodule, P e The energy transferred to the emitter side of the target elastic compression submodule.

10. An electronic device comprising a memory, a processor, and a computer program stored in the memory and executable on the processor, characterized in that, When the processor executes the program, it implements the steps of the heat network-based press-fit IGBT junction temperature measurement method according to any one of claims 2 to 5.

11. A computer-readable storage medium having a computer program stored thereon, characterized in that, When executed by a processor, the computer program implements the steps of the heat network-based press-fit IGBT junction temperature measurement method as described in any one of claims 2 to 5.

12. A computer program product comprising a computer program / instructions, characterized in that, When the computer program / instructions are executed by the processor, they implement the steps of the heat network-based press-fit IGBT junction temperature measurement method as described in any one of claims 2 to 5.

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