A power device with high controllability of voltage rate of change and a preparation method thereof

Abstract

The application discloses a power device with high controllability of voltage change rate and a preparation method, and relates to the technical field of semiconductor devices. The power device comprises a substrate with a first conductive type and a plurality of parallelly distributed trench type cells arranged in an active region of the substrate. Any trench type cell comprises an active gate unit, a first auxiliary gate unit group, a second auxiliary gate unit group, a first dummy gate unit group and a second dummy gate unit group. The active gate unit is located between the first auxiliary gate unit group and the second auxiliary gate unit group. The first dummy gate unit group and the second dummy gate unit group each comprise at least one dummy gate unit. The dummy gate unit comprises a dummy gate trench, and a second conductive type floating region is arranged below the dummy gate trench. The second conductive type floating region is in contact with at least a bottom of the dummy gate trench. The power device can make the gate resistance Rg have better control ability on the collector-emitter voltage change rate.

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