一种晶硅片背接触电池刻槽添加剂及其制备方法与使用方法
By using a compounded additive for grooving the back contact cells of crystalline silicon wafers, the problems of long grooving time and poor cleaning effect are solved, achieving a fast and efficient grooving process and excellent cleaning effect. The tower base is reduced, the adhesion of the oxide layer is enhanced, and the battery efficiency is improved.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- SHAOXING TUOBANG ELECTRONIC & TECH CO LTD
- Filing Date
- 2025-02-26
- Publication Date
- 2026-07-17
AI Technical Summary
Existing additives for back contact cell grooving of crystalline silicon wafers have problems such as excessive grooving time, limited cleaning effect, and large and flat tower base, which lead to reduced cell efficiency.
A compound additive for etching the back contact cells of crystalline silicon wafers is used, including surfactants, chelating agents containing carboxyl groups, strong base-weak acid salts, and corrosion promoters containing hydroxyl groups, to form a protective film and promote anisotropic corrosion, thereby improving etching efficiency and cleaning effect.
It achieves rapid grooving (completed within 5 minutes), no molten oxide film residue, no black cores or dirt, and reduces the tower base from 20 μm to 3~5 μm, which enhances the adhesion of the subsequent deposited oxide layer and improves the production efficiency of solar cells.
Smart Images
Figure CN120018620B_ABST