White light LED light source module with high color gamut

Abstract

The embodiment of the invention discloses a high-color-gamut white light LED light source module, and relates to the field of semiconductor light emitting, and the high-color-gamut white light LED light source module comprises an LED wafer and a light emitting part; the mixed spectrum emitted by the LED wafer is cyan light, and the peak wavelength range of the cyan light is 440-560 nm; the blue light spectrum comprises a blue light spectrum and a green light spectrum, the peak wavelength range of the blue light spectrum is 440-480 nm, and the peak wavelength range of the green light spectrum is 500-560 nm; the mixed spectrum emitted by the light-emitting part is red light or yellow-green light, and the range of the peak wavelength is 520-650 nm. The LED wafer comprises a first quantum well layer and a second quantum well layer, and the difference value between the peak wavelength of the first quantum well layer and the peak wavelength of the second quantum well layer is larger than 60 nm. The first quantum well layer is electroluminescent, and the second quantum well layer is photoluminescent; and the light-emitting part is photoluminescence. The high-color-gamut white light LED light source module has the advantages of high color gamut, low cost, high reliability and high color stability.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor light emitting, and in particular to a white light LED light source module with a high color gamut. Background Art

[0002] Color gamut is an indicator that measures the ability of a display to truly restore colors. The wider the color gamut, the richer the color performance.

[0003] There are two main technical routes at present: improving the color gamut through panel technology and backlight technology. The technical route of improving the color gamut through backlight technology mainly has the following three solutions: 1. Blue LED light source + quantum film, such as the invention patent "Quantum Dot Film" with patent application number CN201480005245.1; 2. White light LED + quantum dot diffusion plate, such as the invention patent with patent application number CN202110840289.8 "A quantum dot diffusion plate and its preparation method"; 3. RGB Mini-LED as a backlight source, such as the invention patent with patent application number CN202111382153.3 "A RGB Mini-LED field sequence backlight control system and method".

[0004] The above three solutions cannot take into account core indicators such as high color gamut, low cost, high reliability and color stability at the same time. Summary of the invention

[0005] The technical problem to be solved by the embodiments of the present invention is the limitation of the display in color gamut performance, which cannot take into account high color gamut, low cost, high reliability and color stability.

[0006] In order to solve the above problems, the embodiment of the present invention discloses a high color gamut white light LED light source module. The high color gamut white light LED light source module has high color gamut, low cost, high reliability and high color stability.

[0007] The present invention provides a high color gamut white light LED light source module, which comprises an LED chip and a light-emitting component; the mixed spectrum emitted by the LED chip is cyan light, and the peak wavelength range of the cyan light is 440-560nm; the cyan light spectrum includes a blue light spectrum and a green light spectrum, the peak wavelength range of the blue light spectrum is 440-480nm, and the peak wavelength range of the green light spectrum is 500-560nm; the mixed spectrum emitted by the light-emitting component is red light or yellow-green light, and the peak wavelength range is 520-650nm; the LED chip comprises a first quantum well layer and a second quantum well layer, and the difference between the peak wavelength of the first quantum well layer and the peak wavelength of the second quantum well layer is greater than 60nm; the first quantum well layer is electroluminescent, and the second quantum well layer is photoluminescent; the light-emitting component is photoluminescent.

[0008] A further technical solution is that the CIE-1931 chromaticity coordinate X value of the mixed spectrum emitted by the LED chip is in the range of 0.1-0.2, and the CIE-1931 chromaticity coordinate Y value of the mixed spectrum emitted by the LED chip is in the range of 0.15-0.3.

[0009] A further technical solution is that the spectrum emitted by the first quantum well layer is blue light, the peak wavelength ranges from 400nm to 480nm, the half-wave width of the wavelength in the spectrum range is equal to or less than 40nm, the CIE-1931 chromaticity coordinate X value ranges from 0.1 to 0.2, and the CIE-1931 chromaticity coordinate Y value ranges from 0.01 to 0.15.

[0010] A further technical solution is that the spectrum emitted by the second quantum well layer is green light, the peak wavelength ranges from 500nm to 560nm, the half-wave width of the wavelength in the spectrum range is equal to or less than 40nm, the CIE-1931 chromaticity coordinate X value ranges from 0.15 to 0.3, and the CIE-1931 chromaticity coordinate Y value ranges from 0.6 to 0.8.

[0011] A further technical solution is that the light-emitting component includes red powder and a transparent adhesive, the red powder is photoluminescent, and the refractive index of the transparent adhesive is in the range of 1.3-1.8; the red light luminous intensity peak of the red powder is greater than or equal to the green light luminous intensity peak of the LED chip.

[0012] A further technical solution is that the peak wavelength of the red powder is in the range of 600nm-660nm, and the half-wave width of the wavelength in the spectral range is equal to or less than 70nm.

[0013] A further technical solution is that the light-emitting element further includes green powder, and the green powder is photoluminescent.

[0014] A further technical solution is that the peak wavelength of the green powder is in the range of 500nm-560nm, and the half-wave width of the wavelength in the spectral range is equal to or less than 70nm.

[0015] A further technical solution is that the light emitting element is above the first quantum well layer, the second quantum well layer is below the first quantum well layer, and the peak luminous intensity of the first quantum well layer is greater than the peak luminous intensity of the second quantum well layer.

[0016] Compared with the prior art, the technical effects achieved by the embodiments of the present invention include: The light-emitting layer of the high color gamut white light LED light source module only needs two quantum well layers, so the cost is low; and only one quantum well layer is electroluminescent, so the reliability is high. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the accompanying drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are some embodiments of the present invention. For ordinary technicians in this field, other accompanying drawings can be obtained based on these accompanying drawings without paying any creative work.

[0018] Figure 1 A schematic diagram of the structure of a high color gamut LED light source module provided in this application; Figure 2 This is a schematic diagram of the structure of the LED chip provided in this application.

[0019] Reference numerals 1. LED chip; 2. Light-emitting component; 11. first quantum well layer; 12. second quantum well layer; 21. Red powder; 22. Green powder. DETAILED DESCRIPTION

[0020] The technical solutions in the embodiments will be described clearly and completely below in conjunction with the drawings in the embodiments of the present invention. Similar component numbers in the drawings represent similar components. Obviously, the embodiments described below are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0021] It should be understood that when used in this specification and the appended claims, the terms "include" and "comprises" indicate the presence of described features, integers, steps, operations, elements and / or components, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, components and / or combinations thereof.

[0022] It should also be understood that the terms used in this description of the embodiments of the present invention are only for the purpose of describing specific embodiments and are not intended to limit the embodiments of the present invention. As used in the description of the embodiments of the present invention and the appended claims, unless the context clearly indicates otherwise, the singular forms of "a", "an" and "the" are intended to include plural forms.

[0023] In order to facilitate the understanding of the technical solution provided by the present application, the research background of the technical solution of the present application is briefly described below. The LED chip 1 includes a substrate (also known as a bottom layer, a substrate), an n-type semiconductor layer, an active layer (also known as a light-emitting layer), and a p-type semiconductor layer. Optical primary colors (RGB): red, green, and blue. After the three optical primary colors are mixed, they form a display screen to display color. The three primary colors are added together to form white, which belongs to one of the colorless systems (black, white, and gray).

[0024] See also Figure 1-2 , an embodiment of the present invention provides a high color gamut white light LED light source module. The high color gamut white light LED light source module includes an LED chip 1 and a light-emitting element 2; the mixed spectrum emitted by the LED chip 1 is cyan light, and the peak wavelength of the cyan light is in the range of 440-560nm; the cyan light spectrum includes a blue light spectrum and a green light spectrum, the peak wavelength of the blue light spectrum is in the range of 440-480nm, and the peak wavelength of the green light spectrum is in the range of 500-560nm; the mixed spectrum emitted by the light-emitting element 2 is red light or yellow-green light, and the peak wavelength is in the range of 520-650nm; the LED chip 1 includes a first quantum well layer 11 and a second quantum well layer 12, and the difference between the peak wavelength of the first quantum well layer 11 and the peak wavelength of the second quantum well layer 12 is greater than 60nm; the first quantum well layer 11 is electroluminescent, and the second quantum well layer 12 is photoluminescent; the light-emitting element 2 is photoluminescent. The specific introduction of each component is as follows: In this embodiment, the first quantum well layer 11 and the second quantum well layer 12 are both active layers of the LED chip 1. The first quantum well layer 11 and the second quantum well layer 12 are stacked and distributed. The first quantum well layer 11 is above the second quantum well layer 12, or the first quantum well layer 11 is below the second quantum well layer 12. It can be understood that the first quantum well layer 11 and the second quantum well layer 12 are not limited in sequence or up and down positions. The structure of the LED chip 1 includes a positive structure, a flip-chip structure, a vertical structure, and other structures extended from the above structures, such as a thin film chip. The side length of the LED is between 5-3000 microns. The LED chip 1 does not need to be excited by phosphors. After power is turned on, it can simultaneously emit two color spectra, and the mixed light is cyan light, wherein the first color is blue light and the second color is green light. The light-emitting element 2 is excited by the light emitted by the LED chip 1 and then emits red light, thereby obtaining a white light mixed with blue light, green light and red light.

[0025] In one embodiment, the peak wavelength range of the blue light spectrum of the LED chip 1 is 440-480nm, the peak wavelength range of the green light spectrum of the LED chip 1 is 500-560nm, and the blue light spectrum of the LED chip 1 is combined with the green light spectrum to obtain a cyan light spectrum, and the peak wavelength range of the cyan light spectrum is 440-560nm. The peak wavelength of the blue light spectrum is greater than 60nm away from the peak wavelength of the green light spectrum. The blue light and the green light are mixed to obtain cyan light. The first quantum well layer 11 includes a chemical formula In i Ga j Al k N represents a nitrogen compound semiconductor, wherein 0≤i, 0≤j, 0≤k, and i+j+k=1. The second quantum well layer 12 of the LED chip 1 is a compound semiconductor composed of nitride or phosphide.

[0026] The technical effects that can be achieved by the embodiments of the present invention include: The light-emitting layer of the high color gamut white light LED light source module only needs two quantum well layers, which is low in cost; there is only one quantum well layer for electroluminescence, there is no obvious color drift phenomenon, and the color consistency is high.

[0027] Continue to see Figure 1-2 In this embodiment, the CIE-1931 chromaticity coordinate X value of the mixed spectrum emitted by the LED chip 1 is in the range of 0.1-0.2, and the CIE-1931 chromaticity coordinate Y value of the mixed spectrum emitted by the LED chip 1 is in the range of 0.15-0.3.

[0028] In this embodiment, the light emission spectrum of the LED chip 1 is cyan, and the CIE-1931 chromaticity coordinate X value range is 0.13-0.18, and the CIE-1931 chromaticity coordinate Y value range is 0.15-0.25.

[0029] Furthermore, the spectrum emitted by the first quantum well layer 11 is blue light, the peak wavelength ranges from 400nm to 480nm, the half-wave width of the wavelength in the spectrum range is equal to or less than 40nm, the CIE-1931 chromaticity coordinate X value ranges from 0.1 to 0.2, and the CIE-1931 chromaticity coordinate Y value ranges from 0.01 to 0.15.

[0030] Furthermore, the spectrum emitted by the second quantum well layer 12 is green light, the peak wavelength ranges from 500nm to 560nm, the half-wave width of the wavelength in the spectrum range is equal to or less than 40nm, the CIE-1931 chromaticity coordinate X value ranges from 0.15 to 0.3, and the CIE-1931 chromaticity coordinate Y value ranges from 0.6 to 0.8.

[0031] Furthermore, the light-emitting element 2 includes a red powder 21 and a transparent adhesive, the red powder 21 is photoluminescent, and the refractive index of the transparent adhesive is in the range of 1.3-1.8; the red light luminous intensity peak of the red powder 21 is greater than or equal to the green light luminous intensity peak of the LED chip 1.

[0032] Specifically, the red powder 21 includes one or more of red quantum dot fluorescent powder and red base powder. The red powder 21 is excited by the LED light source, and the emission peak wavelength after excitation is between 600-660nm; the half-width wavelength of its emission spectrum does not exceed 70nm. The transparent adhesive includes but is not limited to organic silicone (based on siloxane polymer), resin glue (such as acrylic resin, polyurethane resin, etc.), epoxy glue (based on epoxy resin system), and the refractive index of the transparent adhesive is in the range of 1.3-1.8.

[0033] In this embodiment, the light emitting element 2 is formed by uniformly mixing red powder 21 and transparent adhesive, and the peak value of the red light luminous intensity excited by the red powder 21 is recorded as E 红 , the peak intensity of green light emitted by LED chip 1 is recorded as E 绿 , understandably, E 红 ≥E 绿 .

[0034] The red base powder includes but is not limited to nitride phosphors (BaSi2O2N2, α-Sialon, β-Sialon, Sr2Si5N8, CaAlSiN3), fluoride phosphors (K2SiF6:Mn 4+ 、K2GeF6:Mn 4+ 、K2TiF6:Mn 4+ ). The red base powder is composed of one or more of the above materials, with a particle diameter ranging from 1 to 50 microns, and photoluminescence. When excited by an LED light source, the emission peak wavelength after excitation is between 600 and 660 nm.

[0035] Red quantum dot phosphors include but are not limited to cadmium selenide (CdSe), indium phosphide (InP), and perovskite (ABX3). Red quantum dot phosphors are composed of one or more of the above materials, with a particle diameter range of 10-30 nanometers, photoluminescence, and are excited by LED light sources. The emission peak wavelength after excitation is between 600-660nm, and the half-width wavelength of its emission spectrum does not exceed 50nm.

[0036] Furthermore, the peak wavelength of the red powder 21 is in the range of 600nm-660nm, and the half-wave width of the wavelength in the spectral range is equal to or less than 70nm.

[0037] Specifically, the red powder 21 is excited by the LED light source, and the emission peak wavelength after excitation is between 600-660nm; the half-width wavelength of its emission spectrum does not exceed 70nm. In one embodiment, the peak luminous intensity of the red light excited by the red powder 21 is greater than or equal to the peak luminous intensity of the green light emitted by the LED chip 1.

[0038] Furthermore, the light-emitting element 2 further includes green powder 22, and the green powder 22 is photoluminescent.

[0039] Specifically, the green powder 22 includes one or more of green base powder and green quantum dot fluorescent powder. The green powder 22 is excited by the LED light source, and the emission peak wavelength after excitation is between 500-560nm; and the half-width wavelength of the emission spectrum does not exceed 70nm.

[0040] In this embodiment, the red light luminous intensity peak value of the red powder 21 is greater than or equal to the sum of the green light luminous intensity peak values ​​of the LED chip 1 and the green powder 22; the sum of the green light luminous intensity peak values ​​of the LED chip 1 and the green powder 22 is less than or equal to the blue light luminous intensity peak value of the LED chip 1. The light-emitting element 2 is formed by uniformly mixing the red powder 21, the green powder 22 and the transparent adhesive, so that the light-emitting element 2 emits yellow-green light. The red light luminous intensity peak value excited by the red powder 21 is recorded as E 红 The total peak value of the green light intensity emitted by the LED chip 1 and the green powder 22 is recorded as E 绿总 , the peak blue light intensity of LED chip 1 is recorded as E 蓝 , understandably, E 红 ≥E 绿总 , E 蓝 ≥E 绿总 .

[0041] Green base powders include but are not limited to sialon ceramic phosphors (β-SiAlON), silicate phosphors (Ba2SiO4, Sr3SiO5), and aluminate phosphors (YAG, (Gd, Y)AG, (Lu, Y)AG). Green base powders are composed of one or more of the above materials, with a particle diameter of 1-50 microns, photoluminescent, and excited by LED light sources. The emission peak wavelength after excitation is between 500-560nm.

[0042] Furthermore, the peak wavelength of the green powder 22 is in the range of 500nm-560nm, and the half-wave width of the wavelength in the spectral range is equal to or less than 70nm.

[0043] Specifically, the green powder 22 is excited by the light emitted by the LED chip 1, and the emission peak wavelength after excitation is between 500-560nm; the half-width wavelength of the emission spectrum does not exceed 70nm.

[0044] Furthermore, the light emitting element 2 is above the first quantum well layer 11 , and the second quantum well layer 12 is below the first quantum well layer 11 .

[0045] In this embodiment, the peak luminous intensity of blue light emitted by the first quantum well layer 11 is 2-5 times the peak luminous intensity of green light emitted by the second quantum well layer 12. The light-emitting element 2 is above the first quantum well layer 11, and the second quantum well layer 12 is below the first quantum well layer 11. The light-emitting element 2 and the second quantum well layer 12 are both photoluminescent. The first quantum well layer 11 with a stronger luminous intensity peak is arranged between the light-emitting element 2 and the second quantum well layer 12 with a weaker luminous intensity peak. The first quantum well layer 11 can effectively excite the light-emitting element 2 and the second quantum well layer 12 to emit light respectively.

[0046] In the above embodiments, the description of each embodiment has its own emphasis. For parts that are not described in detail in a certain embodiment, reference can be made to the relevant descriptions of other embodiments.

[0047] In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as limiting the present invention.

[0048] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include one or more of the features. In the description of the present invention, the meaning of "plurality" is two or more, unless otherwise clearly and specifically defined.

[0049] In the present invention, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense, for example, it can be connected, detachably connected, or integrated; it can be mechanically connected or electrically connected; it can be directly connected or indirectly connected through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0050] In the present invention, unless otherwise clearly specified and limited, a first feature being "above" or "below" a second feature may include that the first and second features are in direct contact, or may include that the first and second features are not in direct contact but are in contact through another feature between them. Moreover, a first feature being "above", "above" and "above" a second feature includes that the first feature is directly above and obliquely above the second feature, or simply indicates that the first feature is higher in level than the second feature. A first feature being "below", "below" and "below" a second feature includes that the first feature is directly below and obliquely below the second feature, or simply indicates that the first feature is lower in level than the second feature.

[0051] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "example", "specific example", or "some examples" etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representation of the above terms should not be understood as necessarily referring to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art may combine and combine the different embodiments or examples described in this specification.

[0052] Obviously, those skilled in the art can make various changes and modifications to the present invention without departing from the spirit and scope of the present invention. Thus, if these modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include these modifications and variations.

[0053] The above is a specific embodiment of the present invention, but the protection scope of the present invention is not limited thereto. Any technician familiar with the technical field can easily think of various equivalent modifications or replacements within the technical scope disclosed by the present invention, and these modifications or replacements should be included in the protection scope of the present invention. Therefore, the protection scope of the present invention shall be based on the protection scope of the claims.

Claims

1. A high color gamut white light LED light source module, characterized in that: Including LED chips and light-emitting components; The mixed spectrum emitted by the LED chip is cyan light, and the peak wavelength range of the cyan light is 440-560nm; the cyan light spectrum includes a blue light spectrum and a green light spectrum, and the peak wavelength range of the blue light spectrum is 440-480nm, and the peak wavelength range of the green light spectrum is 500-560nm; The mixed spectrum emitted by the light emitting element is red light or yellow-green light, and the peak wavelength ranges from 520 to 650 nm; The LED chip comprises a first quantum well layer and a second quantum well layer, and the difference between the peak wavelength of the first quantum well layer and the peak wavelength of the second quantum well layer is greater than 60nm; The first quantum well layer is electroluminescent, the second quantum well layer is photoluminescent; and the light emitting element is photoluminescent.

2. The high color gamut white light LED light source module according to claim 1, characterized in that: The CIE-1931 chromaticity coordinate X value of the mixed spectrum emitted by the LED chip is in the range of 0.1-0.2, and the CIE-1931 chromaticity coordinate Y value of the mixed spectrum emitted by the LED chip is in the range of 0.15-0.

3.

3. The high color gamut white light LED light source module according to claim 2, characterized in that: The spectrum emitted by the first quantum well layer is blue light, the peak wavelength ranges from 400nm to 480nm, the half-wave width of the wavelength in the spectrum range is equal to or less than 40nm, the CIE-1931 chromaticity coordinate X value ranges from 0.1 to 0.2, and the CIE-1931 chromaticity coordinate Y value ranges from 0.01 to 0.

15.

4. The high color gamut white light LED light source module according to claim 2, characterized in that: The spectrum emitted by the second quantum well layer is green light, the peak wavelength ranges from 500nm to 560nm, the half-wave width of the wavelength in the spectrum range is equal to or less than 40nm, the CIE-1931 chromaticity coordinate X value ranges from 0.15 to 0.3, and the CIE-1931 chromaticity coordinate Y value ranges from 0.6 to 0.

8.

5. The high color gamut white light LED light source module according to claim 2, characterized in that: The light-emitting component includes red powder and a transparent adhesive. The red powder is photoluminescent, and the refractive index of the transparent adhesive is in the range of 1.3-1.

8. The peak luminous intensity of red light of the red powder is greater than or equal to the peak luminous intensity of green light of the LED chip.

6. The high color gamut white light LED light source module according to claim 5, characterized in that: The peak wavelength of the red powder is in the range of 600nm-660nm, and the half-wave width of the wavelength in the spectral range is equal to or less than 70nm.

7. The high color gamut white light LED light source module according to claim 5, characterized in that: The light-emitting element further comprises green powder, and the green powder is photoluminescent.

8. The high color gamut white light LED light source module according to claim 7, characterized in that: The peak wavelength of the green powder is in the range of 500nm-560nm, and the half-wave width of the wavelength in the spectral range is equal to or less than 70nm.

9. The high color gamut white light LED light source module according to claim 1, characterized in that: The light emitting element is above the first quantum well layer, the second quantum well layer is below the first quantum well layer, and the peak luminous intensity of the first quantum well layer is greater than the peak luminous intensity of the second quantum well layer.

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