Gallium oxide memristor and preparation method thereof
By using magnetron sputtering and laser pulse deposition techniques in the memristor, the reliability and performance consistency of existing memristors are solved, and the effect of simulating synaptic performance is achieved.
Patent Information
- Application Number
- CN202510168290.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-02-14
- Publication Date
- 2025-05-16
AI Technical Summary
The reliability of existing memristors is low, and the performance of memristors manufactured by different units and equipment varies greatly, limiting their mass production in high-density independent memory.
A magnetron sputtering device was used to prepare a titanium nitride bottom electrode and a platinum top electrode. A gallium oxide resistive layer was grown on the surface of the bottom electrode part by using a laser pulse deposition device to form a test electrode, and the top electrode was grown after covering the mask on the resistive layer.
Through redox reaction, conductive filaments are formed inside the resistive layer, the device resistance value changes are achieved, synaptic performance is simulated, and the reliability and performance consistency of the memristor are improved.
Smart Images
Figure CN120018769A_ABST
Abstract
Description
Technical Field
[0001] The present application relates to the technical field of memristors, and in particular to a gallium oxide memristor and a preparation method thereof. Background Art
[0002] Gallium oxide is a promising resistive material due to its high thermal stability, high chemical stability, low carrier mobility, wide bandgap, and sensitivity to oxygen. Resistive random access memory (RRAM) has been extensively studied as a potential non-volatile memory device due to its high compatibility with existing CMOS (complementary metal oxide semiconductor) processes. Some foundries offer memristor solutions for embedded applications, but they have not yet been mass-produced as high-density standalone memory due to their relatively low reliability and large performance differences between different units and between different devices. Memristors have great potential for application in low-power sensor systems. Memristors are non-volatile memories that respond to and record input signals when they are present, even in the absence of power. Memristors are also applied to logical operations because they are able to store and process information in the same physical location. When applied to computing systems, memristor devices can perform vector-matrix multiplication in a cross-shaped form. In addition, memristors are also used in artificial neural networks and optoelectronic devices.
[0003] Based on this, how to prepare a new type of memristor with high reliability is one of the research directions of those skilled in the art. Summary of the invention
[0004] In view of this, the present application proposes a gallium oxide memristor and a preparation method thereof, aiming to prepare a gallium oxide memristor capable of realizing neural synaptic function by a low-cost method.
[0005] The present application provides a method for preparing a gallium oxide memristor, the method comprising:
[0006] S1: preparing a silicon substrate, placing the silicon substrate in a growth chamber of a magnetron sputtering device to grow a bottom electrode layer on the silicon substrate;
[0007] S2: placing the sample into a growth chamber of a laser pulse deposition device, growing a resistive switching layer of gallium oxide on a portion of the surface of the bottom electrode, and retaining a spare portion on the surface of the bottom electrode where the resistive switching layer is not grown, the spare portion forming a test electrode of the gallium oxide memristor;
[0008] S3: After covering the resistive layer with a mask, a top electrode is grown by magnetron sputtering to obtain the gallium oxide memristor.
[0009] In one embodiment, the step S2 includes: using a shielding member to cover a portion of the surface of the bottom electrode, the resistive layer is grown on the surface of the bottom electrode not covered by the shielding member, and the surface of the bottom electrode covered by the shielding member forms the remaining portion.
[0010] In one embodiment, the shielding member is a conductive tape.
[0011] In one embodiment, the material of the bottom electrode is titanium nitride; the material of the top electrode is platinum.
[0012] In one embodiment, in step S1, the vacuum degree of the bottom electrode in the growth chamber of the magnetron sputtering device is lower than 3×10 - 6 Toor is then followed by growth. During the growth of the bottom electrode:
[0013] The growth parameters of the bottom electrode are: sputtering power of 200W, argon gas flow rate of 20SCCM, time of 5400S, and thickness of 280-320nm.
[0014] In one embodiment, in step S2, the vacuum degree of the resistive layer in the growth chamber of the laser pulse deposition equipment is lower than 3×10 -5 Pa after the start of growth, during the growth of the resistive layer:
[0015] The growth parameters of the resistive layer are: laser power of 300 mJ, frequency of 3 Hz, oxygen pressure of 0.5 Pa, time of 360 s, and thickness of 80-110 nm.
[0016] In one embodiment, in step S3, the vacuum degree of the top electrode in the growth chamber of the magnetron sputtering device is lower than 3×10 - 6 Toor is then followed by growth, during the growth of the top electrode:
[0017] The growth parameters of the top electrode are: sputtering power of 200W, argon gas flow rate of 100SCCM, time of 900S, and thickness of 70-80nm.
[0018] In one embodiment, the top electrode includes a plurality of metal patterns, and each of the metal patterns, the resistive switching layer, and the bottom electrode constitute an independent device.
[0019] In one embodiment, the metal pattern is circular.
[0020] The present application also provides a gallium oxide memristor, which is manufactured by the manufacturing method described above.
[0021] In summary, the present application provides a gallium oxide memristor and a preparation method thereof, wherein a magnetron sputtering device is used to prepare a bottom electrode and a top electrode, and a laser pulse deposition device is used to prepare a gallium oxide resistive layer. Among them, the bottom electrode is used to apply a signal, and gallium oxide is used as a resistive layer. An external electric field is applied to the bottom electrode and the top electrode. Under the action of the current, the resistive layer can be transformed into two different resistance values, and conductive filaments are formed inside the resistive layer through redox reactions, thereby changing the resistance of the device, which can simulate some neural synaptic properties. The preparation method of the present application is simple and easy to operate, and the prepared gallium oxide memristor has the characteristics of no electroplating and can simulate neural synaptic properties. BRIEF DESCRIPTION OF THE DRAWINGS
[0022] Figure 1 This is a schematic diagram of the process of preparing the gallium oxide memristor of the present application.
[0023] Figure 2 This is a schematic diagram of the internal structure of the gallium oxide memristor of the present application.
[0024] Figure 3 FIG. 1 is a plan view of a gallium oxide memristor according to the present application.
[0025] Figure 4 This is a simulation diagram of the nonlinear transmission characteristics of the gallium oxide memristor of the present application under multiple continuous scans of the external DC voltage.
[0026] Figure 5 This is a simulation diagram of the process of the gallium oxide memristor of the present application transitioning from double pulse enhancement to double pulse inhibition under multi-pulse stimulation. DETAILED DESCRIPTION
[0027] Before describing the embodiments in detail, it should be understood that the present application is not limited to the detailed structure or component arrangement described below or in the drawings in the present application. The present application may be an embodiment implemented in other ways. Moreover, it should be understood that the words and terms used herein are only used for descriptive purposes and should not be interpreted restrictively. The words "including", "comprising", "having" and the like used herein are meant to include the items listed thereafter, their equivalents and other additional items. In particular, when describing "a certain element", the present application does not limit the number of the element to one, but may also include multiple elements.
[0028] Please refer to Figure 1 and Figure 2 As shown, the present application provides a method for preparing a gallium oxide memristor, the preparation method comprising the following steps:
[0029] S1: preparing a silicon substrate 2, placing the silicon substrate 2 in a growth chamber of a magnetron sputtering device to grow a bottom electrode 3 on the silicon substrate 2;
[0030] S2: placing the sample obtained in step S1 into a growth chamber of a laser pulse deposition device, growing a resistive switching layer 4 of gallium oxide on a portion of the surface of the bottom electrode 3, and retaining a spare portion 6 on the surface of the bottom electrode 3 where the resistive switching layer 4 is not grown, the spare portion 6 forming a test electrode of the gallium oxide memristor 1;
[0031] S3: After covering the resistive layer 4 with a mask, a top electrode 5 is grown by magnetron sputtering to obtain a gallium oxide memristor 1 .
[0032] In the present application, the material of the bottom electrode 3 is titanium nitride, the material of the resistive layer 4 is Ga2O3, the resistive layer 4 is, for example, a Ga2O3 thin film, and the material of the top electrode 5 is platinum.
[0033] In step S1, the vacuum degree of the bottom electrode 3 in the growth chamber of the magnetron sputtering equipment is lower than 3×10 -6 Toor is then performed for growth. During the growth process of the bottom electrode 3, the growth parameters of the bottom electrode 3 are: sputtering power is 200W, argon gas flow rate is 20SCCM, time is 5400S, thickness is 280-320nm, preferably 300nm.
[0034] In step S2, the vacuum degree of the resistive layer 4 in the growth chamber of the laser pulse deposition equipment is lower than 3×10 -5 Pa, during the growth process of the resistive layer 4, the growth parameters of the resistive layer 4 are: laser power is 300mJ, frequency is 3Hz, oxygen pressure is 0.5Pa, time is 360s, thickness is 80-110nm, preferably 100nm.
[0035] In step S3, the vacuum degree of the top electrode 5 in the growth chamber of the magnetron sputtering equipment is lower than 3×10 -6 Toor is then performed for growth. During the growth process of the top electrode 5, the growth parameters of the top electrode 5 are: sputtering power is 200 W, argon gas flow rate is 100 SCCM, time is 900 S, thickness is 70-80 nm, preferably 80 nm.
[0036] Preferably, step S2 further comprises: using a shielding member to cover part of the surface of the bottom electrode 3, the resistive layer 4 is grown on the surface of the bottom electrode 3 not covered by the shielding member, and the surface of the bottom electrode 3 covered by the shielding member forms a spare part 6. The shielding member is, for example, a conductive tape.
[0037] The resistive selector prepared by the above preparation method is a gallium oxide memristor 1. In a specific embodiment, the preparation method includes:
[0038] The silicon substrate 2 is cleaned and dried for later use;
[0039] The silicon substrate 2 is placed in the growth chamber of the magnetron sputtering device. The growth parameters of the magnetron sputtering device are controlled as follows: sputtering power is 200 W, argon gas flow rate is 20 SCCM, time is 5400 s, thickness is 300 nm, and the vacuum degree in the growth chamber is less than 3×10 - 6 After Toor, a bottom electrode 3 made of titanium nitride is grown on the silicon substrate 2 .
[0040] The silicon substrate 2 with the bottom electrode 3 grown thereon was taken out, and the surface of part of the bottom electrode 3 was covered with a conductive tape, and the substrate was placed in the growth chamber of the laser pulse deposition device. The growth parameters of the laser pulse deposition device were controlled as follows: laser power of 300 mJ, frequency of 3 Hz, oxygen pressure atmosphere of 0.5 Pa, time of 360 s, thickness of 100 nm, and the vacuum degree in the growth chamber was lower than 3×10 -5 After Pa, a Ga2O3 film is grown on the surface of the bottom electrode 3, that is, a resistive layer 4 is grown on the surface of the bottom electrode 3 not covered by the conductive tape, and the portion of the bottom electrode 3 covered by the conductive tape where the resistive layer 4 is not grown serves as the test area of the gallium oxide memristor 1.
[0041] The silicon substrate 2 with the bottom electrode 3 and the resistive switching layer 4 is taken out, the resistive switching layer 4 is covered with a mask plate, and the substrate is placed in the growth chamber of the magnetron sputtering device. The growth parameters of the magnetron sputtering device are controlled as follows: the sputtering power is 200 W, the argon gas flow rate is 100 SCCM, the time is 900 S, the thickness is 80 nm, and the vacuum degree in the growth chamber is less than 3×10 -6 After Toor, platinum is grown and deposited on the resistive layer 4, that is, a top electrode 5 is grown on the resistive layer 4, and then the mask is removed.
[0042] The conductive tape is used to cover part of the bottom electrode 3 so that the bottom electrode 3 can be torn off and exposed in the subsequent test process for easy testing. In other embodiments, other methods can be used to cover part of the bottom electrode 3 without contaminating the bottom electrode 3.
[0043] The top electrode 5 includes a plurality of metal patterns, which are arranged at intervals, for example, a plurality of metal patterns are arranged in a square array, each metal pattern and the resistive layer 4 and the bottom electrode 3 form an independent device, and the plurality of metal patterns divide the entire gallium oxide memristor 1 into a plurality of independent devices. Figure 3 As shown, the metal pattern is preferably circular. In other embodiments, the metal pattern can also be designed as other shapes.
[0044] The present application also provides a gallium oxide memristor 1, which is manufactured by the above-mentioned manufacturing method.
[0045] like Figure 4As shown, when the gallium oxide memristor 1 prepared in the present application is subjected to IV testing, the top electrode 5 is grounded, and a voltage is applied to the bottom electrode 3. Under the action of the electric field, the conductive filaments formed by the oxygen vacancies gradually decrease during each negative voltage scan until the conductive filaments break at the seventh cycle, and the device jumps to a high-resistance state, simulating the nonlinear transmission characteristics of the gallium oxide memristor. Figure 5 As shown, multiple pulses are continuously applied to the gallium oxide memristor 1. As the number of positive pulses increases, its response current increases to the maximum. As subsequent pulses continue to be applied, the current gradually decreases. The whole process simulates the transition of the gallium oxide memristor from double pulse enhancement to double pulse suppression.
[0046] In summary, the present application provides a gallium oxide memristor and a preparation method thereof, wherein a magnetron sputtering device is used to prepare a bottom electrode and a top electrode, and a laser pulse deposition device is used to prepare a gallium oxide resistive layer. Among them, the bottom electrode is used to apply a signal, and gallium oxide is used as a resistive layer. An external electric field is applied to the bottom electrode and the top electrode. Under the action of the current, the resistive layer can be transformed into two different resistance values, and conductive filaments are formed inside the resistive layer through redox reactions, thereby changing the resistance of the device, which can simulate some neural synaptic performance. The preparation method of the present application is simple and easy to operate, and the prepared gallium oxide memristor has the characteristics of no electroplating and can simulate neural synaptic performance. The prepared gallium oxide memristor simulates the nonlinear transmission characteristics in the neural synaptic performance and observes the process of double pulse enhancement to double pulse suppression.
[0047] The concepts described herein may be implemented in other forms without departing from their spirit and characteristics. The specific embodiments disclosed should be considered illustrative rather than restrictive. Therefore, the scope of this application is determined by the appended claims rather than by the preceding description. Any changes within the literal meaning and equivalent scope of the claims should fall within the scope of these claims.
Claims
1. A method for preparing a gallium oxide memristor, characterized in that: The preparation method comprises: S1: preparing a silicon substrate, placing the silicon substrate in a growth chamber of a magnetron sputtering device to grow a bottom electrode layer on the silicon substrate; S2: placing the sample into a growth chamber of a laser pulse deposition device, growing a resistive switching layer of gallium oxide on a portion of the surface of the bottom electrode, and retaining a spare portion on the surface of the bottom electrode where the resistive switching layer is not grown, the spare portion forming a test electrode of the gallium oxide memristor; S3: After covering the resistive layer with a mask, a top electrode is grown by magnetron sputtering to obtain the gallium oxide memristor.
2. The method for preparing a gallium oxide memristor according to claim 1, characterized in that: The step S2 includes: using a shielding member to cover a portion of the surface of the bottom electrode, the resistive switching layer is grown on the surface of the bottom electrode not covered by the shielding member, and the surface of the bottom electrode covered by the shielding member forms the remaining portion.
3. The method for preparing a gallium oxide memristor according to claim 2, characterized in that: The shielding member is a conductive tape.
4. The method for preparing a gallium oxide memristor according to claim 1, characterized in that: The material of the bottom electrode is titanium nitride; the material of the top electrode is platinum.
5. The method for preparing a gallium oxide memristor according to claim 1, characterized in that: In step S1, the vacuum degree of the bottom electrode in the growth chamber of the magnetron sputtering equipment is less than 3×10 -6 Toor is then followed by growth. During the growth of the bottom electrode: The growth parameters of the bottom electrode are: sputtering power of 200W, argon gas flow rate of 20SCCM, time of 5400S, and thickness of 280-320nm.
6. The method for preparing a gallium oxide memristor according to claim 1, characterized in that: In step S2, the vacuum degree of the resistive layer in the growth chamber of the laser pulse deposition equipment is lower than 3×10 -5 Pa after the start of growth, during the growth of the resistive layer: The growth parameters of the resistive layer are: laser power of 300 mJ, frequency of 3 Hz, oxygen pressure of 0.5 Pa, time of 360 s, and thickness of 80-110 nm.
7. The method for preparing a gallium oxide memristor according to claim 1, characterized in that: In step S3, the vacuum degree of the top electrode in the growth chamber of the magnetron sputtering equipment is less than 3×10 -6 Toor is then followed by growth, during the growth of the top electrode: The growth parameters of the top electrode are: sputtering power of 200W, argon gas flow rate of 100SCCM, time of 900S, and thickness of 70-80nm.
8. The method for preparing a gallium oxide memristor according to claim 1, characterized in that: The top electrode includes a plurality of metal patterns, and each of the metal patterns, the resistive switching layer and the bottom electrode constitute an independent device.
9. The method for preparing a gallium oxide memristor according to claim 8, characterized in that: The metal pattern is circular.
10. A gallium oxide memristor, characterized in that: The gallium oxide memristor is prepared by the preparation method as described in any one of claims 1-9.