Materials for forming patterned coatings and devices incorporating same

Abstract

A layered semiconductor device includes a compound. The compound may include an adamantane moiety and at least one low surface tension moiety bonded thereto.

Description

[0001] Related patent applications

[0002] This application claims priority to U.S. Provisional Patent Application No. 63 / 409,055, filed September 22, 2022, the contents of which are incorporated herein by reference in their entirety. Technical Field

[0003] This disclosure relates to layered semiconductor devices, and in some non-limiting examples to layered optoelectronic devices having multiple sub-pixel emission regions, each sub-pixel including a first electrode and a second electrode separated by a semiconductor layer, wherein at least one of these electrodes, at least one particulate structure, a conductive coating electrically coupled to these electrodes, and at least one of the transmission regions can be patterned by depositing a patterned coating, which can serve as and may be at least one of nucleation inhibition coatings. Background Art

[0004] In optoelectronic devices such as organic light-emitting diodes (OLEDs), at least one semiconductive layer, including an emitting layer, may be disposed between a pair of electrodes (such as an anode and a cathode). The anode and cathode may be electrically coupled to a power source and generate holes and electrons, respectively, which migrate toward each other through the at least one semiconductive layer. When a pair of holes and electrons combine, EM radiation in the form of photons may be emitted.

[0005] OLED display panels (such as active-matrix OLED (AMOLED) panels) may include multiple pixels, each pixel further including multiple (including but not limited to one of three and four) sub-pixels. In some non-limiting examples, the various sub-pixels of a pixel may be characterized by at least one of three and four different colors (including but not limited to R (red), G (green), and B (blue)). Each (sub)pixel may have an associated emission region comprising an associated pair of electrodes and a stack of at least one semiconductive layer between these electrodes. In some non-limiting examples, each sub-pixel of a pixel may emit EM radiation, including but not limited to photons, having an associated wavelength spectrum characterized by a given color (including but not limited to one of R (red), G (green), B (blue), and W (white)). In some non-limiting examples, the (sub)pixel may be selectively driven by driving circuitry including at least one thin-film transistor (TFT) structure electrically coupled to conductive metal lines within a substrate, and in some non-limiting examples, electrodes and at least one semiconductive layer are deposited on the substrate. In some non-limiting examples, various coatings (layers) of such panels may be formed by vacuum-based deposition processes.

[0006] In an AMOLED panel, a subpixel can emit EM radiation when a voltage is applied between its anode and cathode. By controlling the voltage applied between the anode and cathode, the emission of EM radiation from each subpixel of such a panel can be controlled. In the case where a common cathode is provided across multiple subpixels, the voltage across the anode and cathode in each subpixel can be controlled by modulating the voltage of the anode. In some non-limiting examples, adjacent anodes can be spaced apart in a lateral direction, and at least one non-emissive region can be provided between them.

[0007] In some applications, there may be an objective to provide a patterned conductive deposition layer for each (sub)pixel of the panel in at least one of the lateral and cross-sectional orientations of the panel during the OLED manufacturing process by selectively depositing a closed coating of conductive deposition material to form device features, such as, but not limited to, at least one of electrodes and conductive elements electrically coupled thereto.

[0008] In some non-limiting applications, one method of doing this involves inserting a fine metal mask (FMM) during the deposition of at least one of the electrode material and the conductive element electrically coupled thereto. However, materials typically used as electrodes have significantly high evaporation temperatures, which can affect at least one of the ability to reuse the FMM and / or the accuracy of the achievable pattern, and also comes with increased cost, effort, and complexity.

[0009] In some non-limiting examples, one approach to doing this involves depositing electrode material and then removing (including via laser drilling) unwanted areas to form a pattern. However, the removal process typically involves the generation and / or presence of at least one of debris, which can affect the yield of the manufacturing process.

[0010] Furthermore, the applicability of such methods may be reduced in some applications and / or in some devices with certain morphological characteristics. Summary of the Invention

[0011] The purpose of this disclosure is to eliminate or mitigate at least one disadvantage of the prior art.

[0012] This disclosure discloses a layered semiconductor device comprising a compound. The compound comprises an adamantane moiety and at least one low surface tension moiety bonded thereto.

[0013] According to a broad perspective, a layered semiconductor device comprising a compound including an adamantane moiety and at least one low surface tension moiety bonded thereto is disclosed.

[0014] In some non-limiting examples, the critical surface tension of the low surface tension portion may be no more than about one of 25 dynes / cm, 21 dynes / cm, 20 dynes / cm, 19 dynes / cm, 18 dynes / cm, 17 dynes / cm, 16 dynes / cm, 15 dynes / cm, 14 dynes / cm, 13 dynes / cm, 12 dynes / cm, 11 dynes / cm, and 10 dynes / cm.

[0015] In some non-limiting examples, the low surface tension moiety can be bonded to atoms of the adamantane moiety at least one of: directly and via a linker moiety.

[0016] In some non-limiting examples, the linker moiety may include at least one of: a substituted alkylene, an unsubstituted alkylene, a substituted amine, an unsubstituted amine, a substituted fluoroalkylene, an unsubstituted fluoroalkylene, a carbon (C), a methylene, an ethylene, CHF, a difluorocarbene, a nitrogen (N), a NH, a sulfur (S), an oxygen (O), an ether, a substituted cycloalkylene, an unsubstituted cycloalkylene, and a hydrocarbon aromatic moiety.

[0017] In some non-limiting examples, the linker moiety can include at least one of a substituted arylene, an unsubstituted arylene, a substituted heteroarylene moiety, an unsubstituted heteroarylene moiety, a substituted fluoroarylene moiety, and an unsubstituted fluoroarylene moiety.

[0018] In some non-limiting examples, the low surface tension portion may include a fluorine (F) portion.

[0019] In some non-limiting examples, the low surface tension moiety may include at least one of: F, substituted fluoroalkyl, unsubstituted fluoroalkyl, substituted fluoroalkoxy, unsubstituted fluoroalkoxy, substituted fluoroalkylsiloxy, unsubstituted fluoroalkylsiloxy, substituted fluorocycloalkyl, unsubstituted fluorocycloalkyl, substituted fluoroaryl, and unsubstituted fluoroaryl.

[0020] In some non-limiting examples, the low surface tension portion may include at least one of the following: CF2 group, CF2H group, CF3 group, and CH2CF3 group.

[0021] In some non-limiting examples, the low surface tension portion may include a silicon (Si) portion.

[0022] In some non-limiting examples, the low surface tension portion may include siloxane-containing groups.

[0023] In some non-limiting examples, the low surface tension portion may include a terminal portion and a linker portion, and the molecular structure of the low surface tension portion may be represented by Formula (AD-2):

[0024]

[0025] in:

[0026] L can represent the connecting base portion.

[0027] T can represent the end portion.

[0028] x can be an integer corresponding to the number of terminal portions T, and

[0029] * may represent the bonding site of the adamantane moiety to which the low surface tension moiety is attached.

[0030] In some unrestricted examples, x can be an integer between approximately 1 and 3.

[0031] In some non-limiting examples, the low surface tension moiety may include an aromatic moiety, a terminal moiety, and a linker moiety, and the molecular structure of the low surface tension moiety may be represented by formula (AD-3):

[0032]

[0033] in:

[0034] L can represent the connecting base portion.

[0035] T can represent the end portion.

[0036] Ar can represent the aromatic group.

[0037] x may be an integer corresponding to the number of terminal parts T,

[0038] y may be an integer corresponding to the number of aromatic moieties Ar, and

[0039] * can represent the bonding site of the adamantane moiety attached to the low surface tension portion.

[0040] In some non-limiting examples, x may be an integer between approximately 1-5, and y may be an integer between approximately 1-3.

[0041] In some non-limiting examples, the low surface tension moiety may include an aromatic moiety, an F-containing moiety, and a linker moiety, and the molecular structure of the low surface tension moiety may be represented by formula (AD-4):

[0042]

[0043] in:

[0044] L can represent the connecting base portion.

[0045] R f It can represent the part containing F.

[0046] x can be related to R containing F. f The number corresponding to the integer,

[0047] Ar can represent the aromatic group.

[0048] y can be an integer corresponding to the number of the Fang tribe part, and

[0049] * can represent the bonding site of the adamantane moiety attached to the low surface tension portion.

[0050] In some unrestricted examples, x can be an integer between approximately 1 and 5, and y can be an integer between approximately 1 and 3.

[0051] In some non-limiting examples, the low surface tension moiety may include a phenyl moiety, a terminal moiety, and a linker moiety, and the molecular structure of the low surface tension moiety may be represented by formula (AD-5):

[0052]

[0053] in:

[0054] L may represent a linker moiety,

[0055] T can represent the terminal part,

[0056] x can be an integer corresponding to the number of terminal portions T.

[0057] Ph can represent the phenyl moiety, and

[0058] * can represent the bonding site of the adamantane moiety attached to the low surface tension portion.

[0059] In some unrestricted examples, x can be an integer between approximately 1 and 5.

[0060] In some non-limiting examples, the low surface tension moiety may include a phenyl moiety, an F-containing moiety, and a linker moiety, and the molecular structure of the low surface tension moiety may be represented by formula (AD-6):

[0061]

[0062] in:

[0063] L can represent the connecting base portion.

[0064] R f It can represent the part containing F.

[0065] x can be related to R containing F. f The integer corresponding to the number,

[0066] Ph may represent a phenyl moiety, and

[0067] * can represent the bonding site of the adamantane moiety attached to the low surface tension portion.

[0068] In some unrestricted examples, x can be an integer between approximately 1 and 5.

[0069] In some non-limiting examples, the molecular structure of the fluoroalkoxy moiety can be represented by formula (AD-7):

[0070] *-O a -(CH2) b (CF2) c -M (AD-7)

[0071] in:

[0072] M can represent one of the H, D, and F atoms.

[0073] 'a' can be an integer corresponding to the number of O atoms.

[0074] b can be an integer corresponding to the number of CH2 units.

[0075] c can represent an integer corresponding to the number of CF2 units, and

[0076] * can represent the bonding site of the phenyl moiety attached to the fluoroalkoxy moiety.

[0077] In some unrestricted examples, a can be 1, b can be an integer between approximately 1 and 4, and c can be an integer between approximately 1 and 12.

[0078] In some non-limiting examples, the molecular weight of the compound is at least one of about 500 g / mol, 550 g / mol, 580 g / mol, 650 g / mol, 750 g / mol, 1,000 g / mol, 1,200 g / mol, 1,300 g / mol, 1,500 g / mol, 1,700 g / mol, 2,000 g / mol, 2,200 g / mol, and 2,500 g / mol.

[0079] In some non-limiting examples, the device may also include a patterned coating comprising a compound disposed on a first layer surface of a lower layer in a laterally oriented first portion; and a deposited layer of a deposited material deposited on a second portion; wherein the first portion is substantially free of a sealing coating of the deposited material.

[0080] In some non-limiting examples, the device may further include an emission region comprising: a first electrode and a second electrode, and at least one semiconductor layer disposed between the first electrode and the second electrode.

[0081] In some non-limiting examples, the first part may not include the lateral orientation of the launch area.

[0082] In some non-limiting examples, the second electrode may include at least a portion of the deposited layer as its layer.

[0083] In some non-limiting examples, the first portion may include a lateral orientation of the emission region.

[0084] In some non-limiting examples, the device may further include an auxiliary electrode comprising a deposited layer as its layer. Attached Figure Description

[0085] Examples of this disclosure will now be described with reference to the following figures, wherein the same reference numerals in the different figures indicate at least one of the following: the same elements and, in some non-limiting examples, similar elements and corresponding elements, and wherein:

[0086] Figure 1 This is a simplified block diagram of an example device in the cross-sectional orientation according to the examples in this disclosure, which has multiple layers in the lateral orientation, the layers being formed by selectively depositing a patterned coating in a first portion of the lateral orientation, followed by depositing a closed coating of deposited material in a second portion thereof;

[0087] Figure 2 Based on the examples in this disclosure Figure 1 A simplified cross-sectional view of an example type of device, in which a closed coating of deposited material in the second part forms the second electrode of the optoelectronic device;

[0088] Figure 3 This is a schematic diagram showing an example cross-sectional view of an example display panel according to an example of the present disclosure, the example display panel having multiple layers, the multiple layers including at least one hole through which at least one electromagnetic signal can be exchanged;

[0089] Figure 4 This illustrates an example of a method for use in accordance with this disclosure. Figure 1 A schematic diagram illustrating an example process of depositing a patterned coating on the exposed surface of the lower layer in an example type of device;

[0090] Figure 5 It is shown that it is used in including Figure 3 A schematic diagram of an example process of depositing deposition material in a second portion of the exposed layer surface of a patterned coating, wherein the patterned coating is a nucleation inhibition coating (NIC);

[0091] Figure 6A It is shown in sectional view Figure 1A schematic diagram of an example type of device;

[0092] Figure 6B This is shown in the supplementary floor plan. Figure 6A Schematic diagram of the device;

[0093] 7A to 7B This is a schematic diagram illustrating various potential behaviors of a patterned coating according to various examples of the present disclosure, the patterned coating being located in Figure 1 The deposition interface between the device and the deposited layer in an example type;

[0094] Figures 8A to 8H Based on the examples in this disclosure Figure 1 The simplified block diagram of the device, viewed from the cross-section, illustrates various examples of possible interactions between the granular patterned coating and the granular structure.

[0095] Figure 9 It is a schematic diagram illustrating an example according to this disclosure. Figure 2 Example cross-sectional view of the device type, and additional example deposition steps;

[0096] Figure 10 This is a schematic diagram illustrating an example stage of an example process for manufacturing an OLED device according to an example of an example type of example of the present disclosure, which has sub-pixel regions, each of which has a second electrode of another thickness.

[0097] Figure 11 This is a schematic diagram showing an example cross-sectional view of an example type of OLED device according to an example of the present disclosure, wherein the second electrode is coupled to the auxiliary electrode;

[0098] Figure 12 This is a schematic diagram showing an example cross-sectional view of an example type of OLED device according to the examples in this disclosure, which has a separator and a shielding area, such as a recess, in its non-emitting region;

[0099] 13A to 13B This is a schematic diagram illustrating an example cross-sectional view of an example OLED device having separators and shielding areas (such as holes) in a non-emitting region according to various examples in this disclosure;

[0100] Figure 14 This illustrates an example energy distribution of the energy states of surface-adsorbed atoms adsorbed onto a surface according to an example in this disclosure;

[0101] Figure 15 is a schematic diagram illustrating the formation of a membrane core according to an example in the present disclosure; and

[0102] Figure 16It is a block diagram of an example computer device within a computing and communication environment that can be used to implement devices and methods according to representative examples of this disclosure.

[0103] In this disclosure, an icon symbol appended with at least one of at least a numerical value (including, but not limited to, at least one of a superscript and a subscript) and at least one letter character (including, but not limited to, in lowercase) can be considered to refer to at least one specific instance and subset of the feature (element) described by the icon symbol. As indicated by the context, indexing an icon symbol without indexing at least one of the appended value and the character can generally refer to the feature described by the icon symbol and at least one of the set of all instances described by it. Similarly, an icon symbol can use the letter "x" to replace a number. As indicated by the context, indexing such an icon symbol can generally refer to the feature described by the icon symbol, wherein the character "x" is replaced by a number and the set of all instances described by it.

[0104] In this disclosure, for purposes of illustration and not limitation, specific details are set forth to provide a thorough understanding of the disclosure, including but not limited to specific architectures, interfaces, and technologies. In some instances, detailed descriptions of well-known systems, techniques, components, devices, circuits, methods, and applications are omitted to avoid obscuring the description of the disclosure with unnecessary detail.

[0105] Furthermore, it should be understood that the block diagrams reproduced herein may represent conceptual views of exemplary components embodying the principles of this technology.

[0106] Accordingly, system and method components have been represented in the drawings by conventional symbols where appropriate, with only those specific details relevant to an understanding of the examples of the present disclosure shown so that the disclosure is not obscured with details that would be apparent to one of ordinary skill in the art having the benefit of the description herein.

[0107] Any of the accompanying drawings provided herein may not be drawn to scale and may not be considered as limiting this disclosure in any way.

[0108] In some examples, any features shown in dashed outlines may be considered optional. Detailed Implementation

[0109] Layered devices

[0110] The present disclosure generally relates to layered semiconductor devices 100, and more particularly to optoelectronic devices 200. Optoelectronic devices 200 may generally encompass any device 100 that converts an electrical signal into EM radiation in the form of photons, and vice versa. In some non-limiting examples, optoelectronic devices 200 may include organic light emitting diodes (OLEDs).

[0111] Those skilled in the art will understand that while this disclosure relates to optoelectronic device 200, its principles can be applied in some non-limiting examples to any panel having multiple layers, including but not limited to at least one layer of conductive deposited material 531. Figure 5 The layers are included as thin films, and in some non-limiting examples, electromagnetic (EM) signals can pass through (including but not limited to) one of the layers at a non-zero angle relative to the plane of at least one of the layers.

[0112] Now go to Figure 1 This figure may show a cross-sectional view of an example layered semiconductor device 100. In some non-limiting examples, such as Figure 2 As shown in more detail below, device 100 may include multiple layers deposited on substrate 10.

[0113] A lateral axis, designated as the X-axis, may be shown together with a longitudinal axis, designated as the Z-axis. A second lateral axis, designated as the Y-axis, may be shown substantially transverse to both the X-axis and the Z-axis. At least one of the lateral axes may define the lateral orientation of the device 100. The longitudinal axis may define the longitudinal orientation of the device 100.

[0114] The layers of device 100 may extend in a lateral direction substantially parallel to a plane defined by the lateral axis. One of ordinary skill in the relevant art will appreciate that, in some non-limiting examples, Figure 1 The representation of a substantially flat surface shown may be an abstract concept for illustrative purposes. In some non-limiting examples, there may be localized substantially flat layers of varying thicknesses and sizes in the lateral extent of device 100, and in some non-limiting examples, at least one substantially non-existent layer separated by uneven transition regions (including lateral gaps and even interruptions).

[0115] Therefore, although for illustrative purposes, device 100 may be shown as a substantially layered structure of substantially parallel planar layers in its longitudinal orientation, such device 100 may locally show different morphologies to define features, each of which may substantially exhibit the layered profile in the longitudinal orientation.

[0116] In some non-limiting examples, the lateral orientation of the exposed surface 11 of the device 100 may include a first portion 101 and a second portion 102. In some non-limiting examples, the second portion 102 may include a portion of the exposed surface 11 of the device 100 located outside the first portion 101.

[0117] like Figure 1As shown, the layer of device 100 may include a substrate 10 and a patterned coating 110 disposed on at least a portion of the exposed layer surface 11 in its laterally oriented direction. In some non-limiting examples, the patterned coating 110 may be confined in a first portion 101 in its lateral range, and the deposited layer 130 may be disposed as a sealing coating 140 on the exposed layer surface 11 of device 100 in a second portion 102 in its laterally oriented direction.

[0118] In some non-limiting examples, at least one particulate structure 150 may be disposed as a discontinuous layer 160 on the exposed surface 11 of the patterned coating 110. In some non-limiting examples, although not shown, at least one of the patterned coating 110, the deposited layer 130, and at least one particulate structure 150 may be deposited on a layer other than the substrate 10 (below layer 710). Figure 7A The underlying layer 710 may include, but is not limited to, an intermediary layer between the substrate 10 and at least one of the patterned coating 110, the deposited layer 130, and at least one particulate structure 150. In some non-limiting examples, the underlying layer 710 may include at least one of an orientation layer and an organic support layer.

[0119] In some non-limiting examples, at least one of the patterned coating 110, the deposited layer 130, and at least one particulate structure 150 may be covered by at least one overlay 170.

[0120] In some non-limiting examples, such an overlay 170 may include at least one of an encapsulation layer and an optical coating. In some non-limiting examples, the encapsulation layer may include at least one of a glass cover, a barrier film, a barrier adhesive, a barrier coating, an encapsulation layer, and a thin-film encapsulation (TFE) layer provided to encapsulate device 100. In some non-limiting examples, the optical coating may include at least one of optical and structural coatings and at least one component thereof, including but not limited to polarizers, color filters, anti-reflective coatings, anti-glare coatings, cover glass, and optically clear adhesives (OCAs).

[0121] In some non-limiting examples, at least one of the substantially thin patterned coating 110 in the first portion 101 and the deposited layer 130 in the second portion 102 may provide a substantially flat surface on which the overcoat 170 may be deposited. In some non-limiting examples, providing such a substantially flat surface for coating such an overcoat 170 may increase its adhesion to such surfaces.

[0122] In some non-limiting examples, the optical coating can be used to modulate the optical properties of EM radiation transmitted, emitted, and absorbed by the device 100, including but not limited to plasmon modes. In some non-limiting examples, the optical coating can be used as at least one of an optical filter, a refractive index matching coating, an optical external coupling coating, a scattering layer, a diffraction grating, and portions thereof.

[0123] In some non-limiting examples, the optical coating can be used to modulate at least one optical microcavity effect in device 100 by adjusting, but not limited to, at least one of the total optical path length and its refractive index. At least one optical property of device 100 can be affected by adjusting at least one optical microcavity effect (including, but not limited to, output EM radiation) (including, but not limited to, at least one of its intensity's angular dependence and its wavelength shift). In some non-limiting examples, the optical coating may be a non-electric component, i.e., the optical coating may not be configured to conduct and transmit at least one of current during normal device operation.

[0124] In some non-limiting examples, the optical coating may be formed of any deposited material 531, and in some non-limiting examples, any mechanism for depositing the deposited layer 130 as described herein may be employed.

[0125] Patterning

[0126] In some non-limiting examples, reference Figure 1 In some non-limiting examples, patterned material 411 is included. Figure 4 The patterned coating 110 (which may be a NIC material in some non-limiting examples) may be disposed as a sealing coating 140 on the exposed surface 11 of the lower layer 710 (including but not limited to the substrate 10) of the device 100 as a sealing coating 140 in some non-limiting examples. In some non-limiting examples, the lateral extent is limited by selective deposition (including but not limited to the use of a shadow mask 415, such as but not limited to a fine metal mask (FMM), including but not limited to the first portion 101).

[0127] Therefore, in some non-limiting examples, in the second part 102 of device 100, the exposed surface 11 of the lower layer 710 of device 100 may be substantially without the closed coating 140 of the patterned coating 110.

[0128] In some non-limiting examples, reference Figure 1In some non-limiting examples, the patterned coating 110 containing patterned material 411 (which may be NIC material in some non-limiting examples) may be disposed as a sealing coating 140 on the exposed layer surface 11 of the lower layer 710 (including but not limited to substrate 10) of device 100. In some non-limiting examples, the lateral extent is limited by selective deposition (including but not limited to the use of a shadow mask 415, such as but not limited to an FMM, including but not limited to the first portion 101).

[0129] Therefore, in some non-limiting examples, in the second part 102 of device 100, the exposed surface 11 of the lower layer 710 of device 100 may be substantially without the closed coating 140 of the patterned coating 110.

[0130] Patterned coating

[0131] The patterned coating 110 may include a patterned material 411. In some non-limiting examples, the patterned material 411 may include a NIC material. In some non-limiting examples, the patterned coating 110 may include a sealing coating 140 of the patterned material 411.

[0132] The patterned coating 110 provides an exposed layer surface 11 having a substantially low tendency for deposition of the deposited material 531 to be deposited on the exposed layer surface after such surface is exposed to a vapor flux 532 of the deposited material 531. This includes, but is not limited to, a substantially low initial adhesion probability (in some non-limiting examples, under conditions confirmed in the dual QCM technique described by Walker et al.). In some non-limiting examples, this substantially low tendency may be significantly less than the tendency for deposition of the deposited material 531 to be deposited on the exposed layer surface 11 of the lower layer 710 of the device 100 (on which the patterned coating 110 has been deposited).

[0133] Due to the properties of at least one of the patterned coating 110 and the patterned material 411 for the deposition of the deposited material 531 (including, but not limited to, a low initial adhesion probability) (in some non-limiting examples, when deposited as at least one of some form of film and coating and in an environment similar to the deposition of the patterned coating 110 within the device 100), the exposed surface 11 of the first portion 101 of the patterned coating 110 may be substantially free of the sealing coating 140 of the deposited material 531.

[0134] In some non-limiting examples, exposing device 100 to a vapor flux 532 of deposited material 531 may result in a sealing coating 140 of deposited material 531 being formed in a second portion 102, wherein the exposed surface 11 of the lower layer 710 may be substantially free of the sealing coating 140 of patterned coating 110.

[0135] In some non-limiting examples, the patterned coating 110 may be a NIC that provides high deposition (patterning) contrast relative to subsequent deposition of the deposited material 531, such that the deposited material 531 does not tend to deposit as a closed coating 140 in some non-limiting examples, where the patterned coating 110 has already been deposited.

[0136] In some non-limiting examples, there may be scenarios where a patterned coating 110 is required to induce the formation of at least one discontinuous layer 160 of particulate structure 150 when the patterned coating 110 in the first portion 101 is subjected to a vapor flux 532 of the deposited material 531. In at least some applications, the properties of the patterned coating 110 may allow a closed coating 140 of the deposited material 531 to be formed in a second portion 102, which may be substantially free of the patterned coating 110, while a discontinuous layer 160 of at least one particulate structure 150 having only at least one characteristic may be formed on the patterned coating 110 in the first portion 101.

[0137] For the purpose of simplifying the discussion, in this disclosure, the patterned coating 110 may be designated as a particulate structure patterned coating 110, with regard to the deposition of the patterned coating 110 to serve as a substrate for depositing at least one particulate structure 150 thereon. p In contrast, with regard to the fact that the patterned coating 110 is deposited in the first portion 101 to substantially prevent the formation of the sealing coating 140 of the deposited layer 130 in such the first portion 101, thereby confining the deposition of the sealing coating 140 of the deposited layer 130 to the second portion 102, this patterned coating 110 can be designated as a non-particulate patterned coating 110. n Those skilled in the art will understand that, in some non-limiting examples, the patterned coating 110 can serve as a granular structure patterned coating 110. p Non-particulate patterned coating 110 n Both.

[0138] In some non-limiting examples, there may be a scenario where it is necessary to form a discontinuous layer 160 of at least one granular structure 150 of a deposition material 531 in the second portion 102 (in some non-limiting examples, the deposition material may be one of a metal and a metal alloy (metal / alloy), including but not limited to at least one of Yb, Ag, Mg, and an Ag-containing material (including but not limited to MgAg)), while simultaneously depositing a closed coating 140 of the deposition material 531 having a thickness not limited to not more than one of approximately 100 nm, 50 nm, 25 nm, and 15 nm. In some non-limiting examples, the amount of deposition material 531 deposited as the discontinuous layer 160 of at least one particulate structure 150 in the first portion 101 may correspond to one of between approximately 1%-50%, 2-25%, 5-20%, and 7-10% of the amount of deposition material 531 deposited as the sealing coating 140 in the second portion 102, which may correspond to a thickness of at least one of no more than approximately 100 nm, 75 nm, 50 nm, 25 nm, and 15 nm, as non-limiting examples.

[0139] In some non-limiting examples, the patterned coating 110 may be patterned, the pattern being defined by at least one area of ​​a closed coating 140 in which there may be substantially no patterned coating 110.

[0140] In some non-limiting examples, the at least one region can separate the patterned coating 110 into a plurality of discrete segments thereof. In some non-limiting examples, the plurality of discrete segments of the patterned coating 110 can be physically spaced apart from each other in a lateral direction thereof. In some non-limiting examples, the plurality of discrete segments of the patterned coating 110 can be arranged in a regular structure (including but not limited to an array (matrix)) such that, in some non-limiting examples, the discrete segments of the patterned coating 110 can form a repeating pattern.

[0141] In some non-limiting examples, at least one of the plurality of discrete segments of the patterned coating 110 may each correspond to an emission region 210. In some non-limiting examples, the aperture ratio of the emission region 410 may be no more than one of about 50%, 40%, 30%, and 20%.

[0142] In some non-limiting examples, the patterned coating 110 may be formed as a single monolithic coating.

[0143] Properties of patterned coatings / materials

[0144] composition

[0145] In some non-limiting examples, the compound of patterned material 411 may include an adamantane portion. In some non-limiting examples, the compound of patterned material 411 may include an adamantane portion and a low surface tension portion bonded to the adamantane portion.

[0146] In some non-limiting examples, the molecular structure of the compound of patterned material 411 can be represented by formula (AD-1):

[0147]

[0148] in:

[0149] R1, R2, R3, and R4 (collectively referred to as R groups) each independently represent a portion containing at least one of the following: hydrogen (H), deuterium (D), fluorine (F), chlorine (Cl), substituted alkyl, unsubstituted alkyl, substituted fluoroalkyl, unsubstituted fluoroalkyl, substituted alkoxy, unsubstituted alkoxy, substituted fluoroalkoxy, unsubstituted fluoroalkoxy, substituted silyloxy, unsubstituted silyloxy, substituted fluoroalkyl silyloxy, unsubstituted fluoroalkyl silyloxy, substituted cycloalkyl, unsubstituted cycloalkyl, substituted fluorocycloalkyl, unsubstituted fluorocycloalkyl, substituted aryl, unsubstituted aryl, substituted fluoroaryl, unsubstituted fluoroaryl, substituted fluoroalkyl thioalkyl, unsubstituted fluoroalkyl thioalkyl, substituted heteroaryl, and unsubstituted heteroaryl; and

[0150] At least one of R1, R2, R3 and R4 contains a low surface tension portion.

[0151] In some non-limiting examples, the R group may include at least one of the following: fluoromethyl, difluoromethyl, trifluoromethyl, difluoromethoxy, trifluoromethoxy, fluoroethyl, polyfluoroethyl, 4-fluorophenyl, 3,4,5-trifluorophenyl, 4-(trifluoromethoxy)phenyl, SF4Cl, SF5, (CF2). a SF5, wherein a is an integer, and trifluoromethylsulfanyl.

[0152] In some non-limiting examples, each R group may be chosen independently of each other, such that the R groups may be the same as or different from each other.

[0153] In some non-limiting examples, the R group may comprise a terminal portion and a linker portion, wherein the linker portion is arranged between the adamantane portion and the terminal portion. In some non-limiting examples, the linker portion may be bonded to both the adamantane portion and the terminal portion. In some non-limiting examples, the molecular structure of the R group may be represented by formula (AD-2):

[0154]

[0155] in:

[0156] L represents the connecting base portion.

[0157] T represents the terminal part,

[0158] x is a positive integer corresponding to the number of terminal portions T. In some non-restricted examples, this positive integer can be between approximately 1 and 3.

[0159] * indicates the bonding site of the adamantane moiety attached to the R group.

[0160] In some non-limiting examples, where x exceeds 1, each terminal moiety T can be bonded to a linker moiety L.

[0161] In some non-limiting examples, the linker portion L may be represented by a single bond. In some non-limiting examples, the linker portion L may be omitted, such that the terminal portion is directly bonded to the adamantane moiety in the absence of an intermediate portion. In some non-limiting examples, where the linker portion L represents a single bond or is omitted, x may be 1.

[0162] In some non-limiting examples, the R group may comprise a terminal portion, an aromatic portion, and a linker portion, wherein the linker portion is arranged between the adamantane portion and the terminal portion. In some non-limiting examples, the linker portion may be bonded to both the adamantane portion and the terminal portion. In some non-limiting examples, the molecular structure of the R group may be represented by formula (AD-3):

[0163]

[0164] in:

[0165] L represents a linker moiety,

[0166] T represents the end portion.

[0167] Ar represents an aromatic moiety,

[0168] x is a positive integer corresponding to the number of terminal portions T, which in some non-restricted examples may be between approximately 1 and 5.

[0169] y is a positive integer corresponding to the number of aromatic moieties Ar, which in some non-limiting examples may be between about 1 and 3, and

[0170] * indicates the bonding site of the adamantane moiety to which the R group is attached.

[0171] In some non-limiting examples, where x exceeds 1, each terminal moiety T can be bonded to a bonding site of the aromatic moiety Ar. In some non-limiting examples, where y exceeds 1, each aromatic moiety Ar can be bonded to a bonding site of the linker moiety L. In some non-limiting examples, where x exceeds 1 and y exceeds 1, each aromatic moiety Ar can be bonded to a bonding site of the linker moiety L, and each terminal moiety T can independently be bonded to a bonding site of the aromatic moiety Ar. In some non-limiting examples, each aromatic moiety Ar can have a terminal moiety T bonded thereto.

[0172] In some non-limiting examples, the R group may comprise at least one of an F-containing moiety as a terminal moiety, an aromatic moiety, and a linker moiety, wherein the linker moiety is arranged between the adamantane moiety and the F-containing moiety. In some non-limiting examples, the linker moiety may be bonded to both the adamantane moiety and the F-containing moiety. In some non-limiting examples, the molecular structure of the R group may be represented by formula (AD-4):

[0173]

[0174] in:

[0175] L represents the connecting base portion.

[0176] R f Indicates the part containing F.

[0177] x is related to R containing F. f In some non-limiting examples, the positive integer may be between about 1 and 5.

[0178] Ar represents an aromatic moiety,

[0179] y is a positive integer corresponding to the number of the Fang family members; in some non-restricted examples, this positive integer can be between approximately 1 and 3.

[0180] * indicates the bonding site of the adamantane moiety to which the R group is attached.

[0181] In some unrestricted examples, where x exceeds 1, each containing F part R f It can bind to the bonding site of the aromatic moiety Ar. In some non-limiting examples, where y is greater than 1, each aromatic moiety Ar can bind to the bonding site of the linker moiety L. In some non-limiting examples, where x is greater than 1 and y is greater than 1, each aromatic moiety Ar can bind to the bonding site of the linker moiety L, and each F-containing moiety R f It can independently bind to the bonding sites of the aromatic moiety Ar. In some non-limiting examples, each aromatic moiety Ar may have an F-containing portion R bonded to it. f .

[0182] In some non-limiting examples, the R group may comprise a terminal portion, a phenyl portion, and a linker portion, wherein the linker portion is arranged between the adamantane portion and the terminal portion. In some non-limiting examples, the linker portion may be bonded to both the adamantane portion and the terminal portion. In some non-limiting examples, the molecular structure of the R group may be represented by formula (AD-5):

[0183]

[0184] in:

[0185] L represents the connecting base portion.

[0186] T represents the end portion.

[0187] x is an integer corresponding to the number of terminal portions T, which in some non-restricted examples may be between approximately 1 and 5.

[0188] Ph represents the phenyl moiety, and

[0189] * indicates the bonding site of the adamantane moiety to which the R group is attached.

[0190] In some non-limiting examples, where x exceeds 1, each terminal portion T can be bonded to a bonding site of the phenyl portion Ph.

[0191] In some non-limiting examples, the R group may comprise at least one of an F-containing moiety as a terminal moiety, a phenyl moiety, and a linker moiety, wherein the linker moiety is arranged between the adamantane moiety and the F-containing moiety. In some non-limiting examples, the linker moiety may be bonded to both the adamantane moiety and the F-containing moiety. In some non-limiting examples, the molecular structure of the R group may be represented by formula (AD-6):

[0192] in:

[0193] L represents the connecting base portion.

[0194] R f Indicates the part containing F.

[0195] x is related to R containing F. f The number corresponds to an integer, which in some non-restricted examples may be between approximately 1 and 5.

[0196] Ph represents the phenyl moiety, and

[0197] * indicates the bonding site of the adamantane moiety to which the R group is attached.

[0198] In some unrestricted examples, where x exceeds 1, each containing F part R fIt can bond to the bonding site of the phenyl moiety Ph.

[0199] Connecting base portion

[0200] In some non-limiting examples, the linker moiety may independently represent any of the following at each occurrence: substituted alkylene, unsubstituted alkylene, substituted amine, unsubstituted amine, substituted fluoroalkylene, unsubstituted fluoroalkylene, carbon (C), CH, CH2, CHF, CF2, nitrogen (N), NH, sulfur (S), oxygen (O), ether, substituted cycloalkylene having 3-6 C atoms, and unsubstituted cycloalkylene having 3-6 C atoms. In some non-limiting examples, the cycloalkylene may include one of the following: cyclopropylene, cyclopentylene, and cyclohexylene.

[0201] In some non-limiting examples, the linker portion may contain an aromatic hydrocarbon moiety that may be unsubstituted or substituted. In some non-limiting examples, the aromatic hydrocarbon moiety may contain at least one heteroatom.

[0202] In some non-limiting examples, such hydrocarbon aromatic moieties may include one of the following: substituted arylene moieties having 5-60 C atoms, unsubstituted arylene moieties having 5-60 C atoms, substituted heteroarylene moieties having 4-60 C atoms, unsubstituted heteroarylene moieties having 4-60 C atoms, substituted fluoroarylene moieties having 5-60 C atoms, and unsubstituted fluoroarylene moieties having 5-60 C atoms. In some non-limiting examples, the linker moiety may be an arylene moiety having 5-30 C atoms.

[0203] In some non-limiting examples, the arylene moiety may include at least one of the following: phenylene, biphenylene, indenylene, naphthylene, anthraceneylene, phenanthrene, pyrylene, and chrysenylene.

[0204] In some non-limiting examples, the heteroaryl moiety may include a heteroaryl moiety derived by replacing at least one ring C atom of at least one heteroaryl moiety with a corresponding number of heteroatoms. In some non-limiting examples, at least one of the heteroatoms may be individually selected from N, O, and S. In some non-limiting examples, the linking moiety may be a heteroaryl moiety having 4-30 C atoms.

[0205] In some non-limiting examples, the fluorinated aryl group may include fluorenylene.

[0206] In some non-limiting examples, the linker moiety may contain substituents. In some non-limiting examples, the R group described herein may be applicable to the substituents of the linker moiety.

[0207] In some non-limiting examples, the connection base portion may be selected from one of equations (LR-1) to (LR-68):

[0208]

[0209]

[0210]

[0211]

[0212] In each of Formulas (LR-1)-(LR-68), it is understood that denotes at least one bond between such group / moiety and an atom to which such group / moiety can be bonded.

[0213] Those skilled in the art will understand that various examples of substituents in the linking base and the R group described in formulas (AD-2)-(AD-6) are applicable to the R groups in formulas (LR-54), (LR-56), (LR-60), (LR-61), and (LR-63). 2 and R 3 .

[0214] In some non-restrictive examples, in equations (LR-60) and (LR-61), u is a positive integer between approximately 0 and 7, Q represents one of CH2, NH, S, O, and SiH, Y represents one of CH, N, and SiH, and w is a positive integer between approximately 0 and 6.

[0215] In some non-limiting examples, the linker portion may include a phosphazene portion. In some non-limiting examples, this phosphazene portion may be at least one of a linear portion and a branched portion, which may be represented as (N=P). x , where x is a positive integer.

[0216] terminal part

[0217] In some non-limiting examples, the terminal portion of the R group may include at least one of the following: a fluorinated (F) moiety, a silicon (Si) moiety, a substituted alkyl group, an unsubstituted alkyl group, a substituted fluoroalkyl group, an unsubstituted fluoroalkyl group, a substituted alkoxy group, an unsubstituted alkoxy group, a substituted fluoroalkoxy group, an unsubstituted fluoroalkoxy group, a substituted silyl alkoxy group, an unsubstituted silyl alkoxy group, a substituted fluoroalkyl silyl alkoxy group, an unsubstituted fluoroalkyl silyl alkoxy group, a substituted cycloalkyl group, an unsubstituted cycloalkyl group, a substituted fluorocycloalkyl group, an unsubstituted fluorocycloalkyl group, a substituted aryl group, an unsubstituted aryl group, a substituted fluoroaryl group, an unsubstituted fluoroaryl group, a substituted heteroaryl group, an unsubstituted heteroaryl group, a substituted fluoroalkyl thioalkyl group, an unsubstituted fluoroalkyl thioalkyl group, and Cl.

[0218] In some non-limiting examples, the terminal portion of the R group of the compound may contain a non-fluorinated portion, i.e., a portion that is substantially free of F.

[0219] In some non-limiting examples, the compound may include at least one terminal portion that is an F-containing portion and at least one terminal portion that is a non-fluorinated portion.

[0220] In some non-limiting examples, such a non-fluorinated moiety may include at least one of the following: substituted alkyl, unsubstituted alkyl, substituted alkoxy, unsubstituted alkoxy, substituted silyloxy, unsubstituted silyloxy, substituted cycloalkyl, unsubstituted cycloalkyl, substituted aryl, unsubstituted aryl, substituted heteroaryl, and unsubstituted heteroaryl, which are substantially lacking F. In some non-limiting examples, the alkyl group may contain about 1-15 carbon atoms, the alkoxy group may contain about 1-15 carbon atoms, the silyloxy group may contain about 1-15 Si atoms, the cycloalkyl group may contain about 1-15 carbon atoms, the aryl group may contain about 1-15 carbon atoms, and the heteroaryl group may contain about 1-15 carbon atoms. It should be understood that in some non-limiting examples, at least one of the foregoing groups may also include at least one substituent, which may include additional atoms.

[0221] Low surface tension part

[0222] In some non-limiting examples, at least one of the R groups of the compound represented by Formula (AD-1) may include a low surface tension moiety. In some non-limiting examples, where the linker moiety is one of: a single bond and omitted (in the R group), the low surface tension moiety may be bonded to the adamantane core.

[0223] The surface tension of a portion attributable to the molecular structure (including, but not limited to, at least one of the adamantane moiety, linker moiety, terminal moiety, and functional group) can be determined using various methods known in the art, including the use of Parachor, as further described by non-limiting example in “Conception and Significance of the Parachor,” Nature 196:890-891. In some non-limiting examples, this method may include determining the critical surface tension of the portion according to equation (1):

[0224]

[0225] in:

[0226] γ represents the critical surface tension of the part;

[0227] P represents the isotonic volume of the part; and

[0228] V m This represents the molar volume of a portion.

[0229] In some non-limiting examples, the critical surface tension of the low surface tension portion may be no more than one of about 25 dynes / cm, 21 dynes / cm, 20 dynes / cm, 19 dynes / cm, 18 dynes / cm, 17 dynes / cm, 16 dynes / cm, 15 dynes / cm, 14 dynes / cm, 13 dynes / cm, 12 dynes / cm, 11 dynes / cm and 10 dynes / cm.

[0230] In some non-limiting examples, the low surface tension portion may include at least one of an F-containing portion and a Si-containing portion. In some non-limiting examples, at least one of the F-containing portion and the Si-containing portion may be atoms bonded to the adamantane portion in at least one of the following ways: directly and via a linker portion.

[0231] In some non-limiting examples, the low surface tension portion may include at least one of the following: F, substituted fluoroalkyl, unsubstituted fluoroalkyl, substituted fluoroalkoxy, unsubstituted fluoroalkoxy, substituted fluoroalkylsilyloxy, unsubstituted fluoroalkylsilyloxy, substituted fluorocycloalkyl, unsubstituted fluorocycloalkyl, substituted fluoroaryl, and unsubstituted fluoroaryl. In some non-limiting examples, the low surface tension portion may include a fluorocarbon group. In some non-limiting examples, the low surface tension portion may include at least one of a CF group, a CF2 group, a CF3 group, and a CF2H group. In some non-limiting examples, the low surface tension portion may include an end unit comprising at least one of CF2CF2H, CF2CF3, CH2CF2H, and CH2CF3. In some non-limiting examples, the end unit may correspond to the end portion of the F-containing portion that is distal to the heterocyclic portion to which the F-containing portion is attached.

[0232] In some non-limiting examples, the low surface tension portion may include a fluoroalkyl portion, which includes, but is not limited to, C3-C... 15 Fluorinated alkyl groups.

[0233] In some non-limiting examples, at least one of the substituted fluoroalkyl and unsubstituted fluoroalkyl may include those derived by replacing at least one H atom of an alkyl group containing about 1-15 C atoms with a corresponding number of F atoms.

[0234] In some non-limiting examples, the F-containing part may include a fluoroalkyl part of formula (FL-1):

[0235]

[0236] in:

[0237] x is an integer between approximately 0 and 6.

[0238] y is an integer between about 1 and 20, and

[0239] A is one of H, D, and F.

[0240] In some non-limiting examples, x may be an integer between 1-4, y may be an integer between 3-10, and A may be one of H and F. In some non-limiting examples, x may be one of 1 and 2, y may be one of 3, 4, 6, and 8, and A may be one of H and F. In some non-limiting examples, x may be 2, y may be 1, and A may be one of H and F. In some non-limiting examples, the sum of x and y may be no more than one of 15, 12, 10, and 8.

[0241] In some non-limiting examples, the F-containing moiety may be a fluoroalkyl group of the following formula (FL-2):

[0242]

[0243] in:

[0244] x is an integer between approximately 1 and 6.

[0245] y is an integer between approximately 1 and 6.

[0246] z is an integer between approximately 1 and 6.

[0247] u is an integer between approximately 1 and 6, and

[0248] A is one of H and F.

[0249] In some non-limiting examples, x may be an integer between approximately 1 and 3, y may be an integer between approximately 1 and 6, z may be an integer between approximately 1 and 3, and u may be an integer between approximately 1 and 6. In some non-limiting examples, at least one of y and u may be no more than one of 5, 4, or 3. In some non-limiting examples, the sum of x, y, z, and u may be no more than one of 15, 12, 10, and 8.

[0250] In some non-limiting examples, the low surface tension moiety may include a fluoroalkoxy moiety including but not limited to a C3-C 15 Fluoroalkoxy groups.

[0251] In some non-limiting examples, at least one of the substituted fluoroalkoxy groups and the unsubstituted fluoroalkoxy groups may include those derived by replacing at least one H atom of an alkoxy group containing, but not limited to, about 1-15 C atoms with a corresponding number of F atoms. In some non-limiting examples, the fluoroalkoxy groups may include those derived by attaching an ether bridging group to at least one of the substituted fluoroalkyl groups and the unsubstituted fluoroalkyl groups.

[0252] In some non-limiting examples, the fluoroalkoxy moiety may have the formula (AD-7):

[0253] *-O a -(CH2) b (CF2) c -M (AD-7)

[0254] in:

[0255] M represents one of the H, D, and F atoms.

[0256] 'a' is a positive integer corresponding to the number of O atoms; in some non-restricted examples, this positive integer can be 1.

[0257] b is an integer corresponding to the number of CH2 units; in some non-restrictive examples, this integer may be between approximately 1 and 4.

[0258] c is an integer corresponding to the number of CF2 units; in some non-restricted examples, this integer can be between approximately 1 and 12.

[0259] * indicates a bonding site attached to the fluoroalkoxy moiety.

[0260] In some non-limiting examples, at least one of the substituted fluoroalkylsiloxy group and the unsubstituted fluoroalkylsiloxy group may include those derived by replacing at least one H atom of an alkylsiloxy group containing, but not limited to, about 1-15 C atoms with a corresponding number of F atoms. In some non-limiting examples, the fluoroalkylsiloxy group may include those derived by attaching a siloxane bridge to at least one of the substituted fluoroalkyl group and the unsubstituted fluoroalkyl group.

[0261] In some non-limiting examples, the low surface tension portion may include a continuous fluorinated chain of carbon material having no more than 6 fluorinated carbon atoms. Non-limiting examples of such portions include at least one of: substituted or unsubstituted fluoroalkyl groups, wherein no more than 6 fluorinated carbon atoms form a continuous fluorinated chain; substituted or unsubstituted fluoroalkoxy groups, wherein no more than 6 fluorinated carbon atoms form a continuous fluorinated chain; and substituted or unsubstituted fluoroalkylsilyloxy groups, wherein no more than 6 fluorinated carbon atoms form a continuous fluorinated chain. In some non-limiting examples, the fluorinated portion may include a continuous fluorinated chain of carbon material having no more than 5, 4, and 3 fluorinated carbon atoms.

[0262] In this disclosure, as used herein, the term "continuous fluorinated chain of carbon matter" generally refers to a carbon chain in which each C atom constituting the carbon chain is a fluorinated carbon atom. In this disclosure, as used herein, the term "fluorinated carbon atom" generally refers to a carbon atom having at least one F atom attached thereto.

[0263] In some non-limiting examples, the low surface tension portion may include siloxane-containing groups.

[0264] In some non-restrictive examples, the part containing F may be selected from one of the formulas (F-1)-(F-202):

[0265]

[0266]

[0267]

[0268]

[0269]

[0270]

[0271]

[0272]

[0273] adamantane portion

[0274] In some non-limiting examples, at least one C atom of the adamantane portion of the compound of the patterned coating 411 may be replaced by a heteroatom. In some non-limiting examples, such heteroatoms may include: O, S, N, NH, beryllium (B), and germanium (Ge).

[0275] In some non-limiting examples, the molecular structure of the compound containing the adamantane moiety can be represented by any one of Formulas (A-1) to (A-29). One of ordinary skill in the relevant art will understand that the various non-limiting examples of terminal moieties and linker moieties described herein can be applied to the terminal moiety T and linker moiety L of Formulas (A-1) to (A-29). One of ordinary skill in the relevant art will also recognize that whenever at least one of the terminal moiety T and linker moiety L appears in any one of Formulas (A-1) to (A-29), the following groups can be independently selected:

[0276]

[0277]

[0278]

[0279]

[0280]

[0281]

[0282] Molecular structures containing different R groups

[0283] In some non-limiting examples, the molecular structure of the compound of patterned material 411 may include multiple different R groups, each partially bonded to adamantane. In some non-limiting examples, the molecular structure of such a compound may be represented by formula (AD-8):

[0284]

[0285] in:

[0286] A represents the adamantane moiety.

[0287] R 1 and R 2 represent a first R group and a second different R group, respectively, and

[0288] p and q are integers of 1 or greater.

[0289] In some non-limiting examples, the sum of p and q can correspond to the total number of bonding sites of the R group to be bonded to the adamantane moiety.

[0290] In some unrestricted examples, R 1 and R 2 One of them may have more than R 1 and R 2 The critical surface tension of the other critical surface tension, such that the R group having at least a (lower) critical surface tension can be a low surface tension moiety. In some non-limiting examples, both R1 and R2 can be low surface tension moiety.

[0291] In some unrestricted examples, R 1 and R 2 One of the may include an F-containing moiety. In some non-limiting examples, R 1 and R 2 Both can contain the part containing F.

[0292] In some unrestricted examples, R 1 and R 2 Each of may include a fluoroalkyl moiety. In some non-limiting examples, R 1 The fluoroalkyl moiety and R 2 The fluoroalkyl moiety may differ in at least one of the following: (i) the degree of fluorination of the fluoroalkyl moiety, which in some non-limiting examples is measured by at least one of the C:F ratio and the molar mass of the moiety attributable to F atoms; (ii) the total molar mass of the fluoroalkyl moiety; (iii) the number of C atoms; (iv) the length of the fluoroalkyl moiety; and (v) the composition of the terminal groups.

[0293] In some non-limiting examples, p may not exceed q, such that R 2 With at least R 1 In some non-limiting examples, the majority of the R groups in the compound may be R 2In some non-limiting examples, the quotient of p divided by the sum of p and q may be no more than approximately one of 0.5, 0.4, 0.3, 0.25, 0.2, 0.15, and 0.1.

[0294] In some non-limiting examples, where p does not exceed q, R1 relative to R2 may have at least one of the following characteristics: (i) higher fluorination degree, which may correspond to at least one of a lower C / F quotient and a higher molar mass ratio attributable to F atoms, (ii) lower molar mass of the fluoroalkyl moiety, (iii) lower number of C atoms contained in the fluoroalkyl moiety, (iv) shorter fluoroalkyl chain length of the fluoroalkyl moiety, and (v) higher fluorination degree of the terminal group.

[0295] In some non-limiting examples, a higher degree of fluorination may correspond to R 1 Having a C / F quotient that may not exceed about 3 / 5. 2 It may have a C / F quotient that may be at least about 3 / 5.

[0296] In some non-limiting examples, shorter fluoroalkyl chain lengths may correspond to R. 1 having not more than one of 1, 2, 3, 4 and 5 C atoms constituting the main chain of the fluoroalkyl moiety. 2 It may have at least 5 C atoms to form the main chain of the fluoroalkyl moiety.

[0297] In some non-limiting examples, a higher degree of fluorination of the terminal group may correspond to one of the following: R 1 With CF3 terminal group, and R 2 With CF2H terminal group; R 1 With CF2CF3 terminal groups, and R 2 having a CF2CF2H terminal group; and R 1 It has a CH2CF3 terminal group, while R 2 It has CH2CF2H terminal groups.

[0298] Fluorine and silicon

[0299] In some non-limiting examples, at least one of the patterned coating 110 and the patterned material 411 may include at least one of F atoms and Si atoms. As some non-limiting examples, the patterned material 411 used to form the patterned coating 110 may be a compound containing at least one of F and Si.

[0300] In some non-limiting examples, the patterned material 411 may include a compound containing F. In some non-limiting examples, the patterned material 411 may include a compound containing F atoms and C atoms. In some non-limiting examples, the patterned material 411 may include a compound containing F and C, wherein the atomic ratio of F to C corresponds to an F / C quotient of at least about one of 0.5, 0.7, 1, 1.5, 2, and 2.5.

[0301] In some non-limiting examples, the atomic ratio of F to C can be determined by counting the F atoms present in the compound structure and, for C atoms, counting only the sp atoms present in the compound structure. 3 In some non-limiting examples, the patterned material 411 may include a compound including F- and C-containing moieties as part of its molecular substructure, wherein the atomic ratio of F to C corresponds to an F / C quotient of at least about one of 1, 1.5, and 2.

[0302] In some non-limiting examples, the patterned material 411 may include an organic-inorganic hybrid material.

[0303] In some non-limiting examples, the patterning material 411 may include an oligomer.

[0304] In some non-limiting examples, the patterning material 411 may include a compound having a molecular structure including a backbone and at least one functional group bonded to the backbone. In some non-limiting examples, the backbone may be an inorganic portion, and the at least one functional group may be an organic portion.

[0305] In some non-limiting examples, the compound may have a molecular structure including a siloxane group. In some non-limiting examples, the siloxane group may be one of a straight-chain siloxane group, a branched siloxane group, and a cyclic siloxane group. In some non-limiting examples, the main chain may include a siloxane group. In some non-limiting examples, the main chain may include a siloxane group and at least one functional group containing F. In some non-limiting examples, the at least one functional group containing F may be a fluoroalkyl group. In some non-limiting examples, such compounds may include fluorosiloxanes, including but not limited to Example Material 6 and Example Material 9 (discussed below).

[0306] In some non-limiting examples, the compound may have a molecular structure including a silsesquioxane group. In some non-limiting examples, the silsesquioxane group may be a POSS. In some non-limiting examples, the main chain may include a silsesquioxane group. In some non-limiting examples, the main chain may include a silsesquioxane group and at least one functional group containing F. In some non-limiting examples, the at least one functional group containing F may be a fluoroalkyl group. In some non-limiting examples, such compounds may include fluoro-silsesquioxanes and fluoro-POSS, including but not limited to Example Material 8 (discussed below).

[0307] In some non-limiting examples, the compound may have a molecular structure comprising at least one of a substituted aryl group, an unsubstituted aryl group, a substituted heteroaryl group, and an unsubstituted heteroaryl group. In some non-limiting examples, the aryl group may be at least one of phenyl and naphthyl. In some non-limiting examples, at least one C atom of the aryl group may be substituted with a heteroatom (as a non-limiting example, at least one of O, N, and S) to derive a heteroaryl group. In some non-limiting examples, the main chain may comprise at least one of a substituted aryl group, an unsubstituted aryl group, a substituted heteroaryl group, and an unsubstituted heteroaryl group. In some non-limiting examples, the main chain may comprise at least one of a substituted aryl group, an unsubstituted aryl group, a substituted heteroaryl group, and an unsubstituted heteroaryl group, and at least one functional group containing F. In some non-limiting examples, at least one functional group containing F may be a fluoroalkyl group.

[0308] In some non-limiting examples, the compound may have a molecular structure comprising at least one of a substituted hydrocarbyl group, an unsubstituted hydrocarbyl group, a linear hydrocarbyl group, a branched hydrocarbyl group, and a cyclic hydrocarbyl group. In some non-limiting examples, at least one C atom of the hydrocarbyl group may be substituted with a heteroatom, the heteroatom including but not limited to at least one of O, N, and S.

[0309] In some non-limiting examples, the compound may have a molecular structure including a phosphazene group. In some non-limiting examples, the phosphazene group may be at least one of a straight-chain phosphazene group, a branched phosphazene group, and a cyclic phosphazene group. In some non-limiting examples, the main chain may include a phosphazene group. In some non-limiting examples, the main chain may include a phosphazene group and at least one functional group containing F. In some non-limiting examples, the at least one functional group containing F may be a fluoroalkyl group. In some non-limiting examples, such compounds may include fluorophosphazenes, including but not limited to Example Material 4 (discussed below).

[0310] In some non-limiting examples, the compound may be a fluoropolymer. In some non-limiting examples, the compound may be a block copolymer containing F. In some non-limiting examples, the compound may be an oligomer. In some non-limiting examples, the oligomer may be a fluorinated oligomer. In some non-limiting examples, the compound may be a block oligomer containing F. In some non-limiting examples, at least one of the fluoropolymer and the fluorinated oligomer may have the molecular structure of at least one of Example Material 3, Example Material 5, and Example Material 7 (discussed below).

[0311] In some non-limiting examples, the compound may be a metal complex. In some non-limiting examples, the metal complex may be an organometallic complex. In some non-limiting examples, the organometallic complex may contain F. In some non-limiting examples, the organometallic complex may include at least one ligand containing F. In some non-limiting examples, the at least one ligand containing F may include a fluoroalkyl group.

[0312] In some non-limiting examples, patterning material 411 may include a variety of different materials.

[0313] Synthesis Example

[0314] Example material 16 (1,3,5,7-tetratetra(3,4-difluorophenyl)adamantane) was prepared using adamantane, 1,2-difluorobenzene, tert-butyl bromide, and aluminum chloride according to the following scheme:

[0315]

[0316] Synthetic steps: 1.65 mL of tert-butyl bromide (4.0 equivalents, 14.72 mmol) was added to a degassed solution of adamantane (500 mg, 1.0 equivalents, 3.68 mmol) in 4 mL of 1,2-difluorobenzene. After 5 minutes, AlCl3 (244 mg, 0.5 equivalents, 1.84 mmol) was carefully added in small amounts. Each time the flask was opened for addition, the released HCl fumes were rinsed with N2. The reaction was stirred at room temperature for 16 hours. After 16 hours, the heterogeneous reaction mixture was stopped, and methanol was added. The crude solid was washed four times with 10 mL of DCM / hexane (1:4). Approximately 460 mg of a white solid was obtained and analyzed.

[0317] The presence of the desired product in solid form was confirmed by nuclear magnetic resonance (NMR):

[0318] 1 H NMR (C6D6, 300MHz): δ1.45 (s, 12H), 6.61-6.68 (m, 4H), 6.94-7.05 (m, 8H). 19FNMR (C6D6CN, 376.4MHz): δ-137.12, -137.18, -140.51, -140.57.

[0319] Transmittance

[0320] In some non-limiting examples, at least one of the patterned coating 110 and the patterned material 411 (in some non-limiting examples, when deposited as at least one of some form of film and coating and under an environment similar to deposition of the patterned coating 110 within the device 100) can have a transmittance of at least a threshold transmittance value to EM radiation after being subjected to a vapor flux 532 of a deposited material 531 including, but not limited to, Ag.

[0321] In some non-limiting examples, such transmittance may be measured under typical conditions that may be used to deposit an electrode of an optoelectronic device 200 (which, in some non-limiting examples, may be a cathode of an organic light emitting diode (OLED) device 200) after exposing the exposed layer surface 11 of at least one of the patterned coating 110 and the patterned material 411 formed as a thin film to a vapor flux 532 of a deposition material 531 (including, but not limited to, at least one of a metal and an alloy, including, but not limited to, Yb, Ag, Mg, and an Ag-containing material (including, but not limited to, MgAg).

[0322] In some non-limiting examples, the conditions for subjecting the exposed layer surface 11 to the vapor flux 532 of the deposition material 531 (including but not limited to at least one of a metal and an alloy, including but not limited to at least one of Yb, Ag, Mg, and a Ag-containing material (including but not limited to MgAg)) may include maintaining the vacuum pressure at a reference pressure, including but not limited to about 10 -4 To or 10 -5 The vapor flux 532 of the deposition material 531 (including but not limited to at least one of a metal and an alloy, including but not limited to at least one of Yb, Ag, Mg, and an Ag-containing material (including but not limited to MgAg)) is substantially consistent with a reference deposition rate, the reference deposition rate including but not limited to about 1 angstrom. / second, which can be monitored using QCM in some non-limiting examples; the vapor flux 532 of the deposited material 531 is directed to the exposed layer surface 11 at an angle substantially close to the plane perpendicular to the exposed layer surface 11; the exposed layer surface 11 is subjected to the vapor flux of the deposited material 431 (including but not limited to at least one of metals and alloys, including but not limited to at least one of Yb, Ag, Mg and Ag-containing materials (including but not limited to MgAg)) until a reference average layer thickness of including but not limited to about 15 nm is reached; and upon reaching such a reference average layer thickness, the exposed layer surface 11 is not further subjected to the vapor flux of the deposited material 531 (including but not limited to at least one of metals and alloys, including but not limited to at least one of Yb, Ag, Mg and Ag-containing materials (including but not limited to MgAg)).

[0323] In some non-limiting examples, the exposed layer surface 11 subjected to a vapor flux 532 of the deposited material 531 (including but not limited to at least one of Yb, Ag, Mg, and Ag-containing materials (including but not limited to MgAg)) may be substantially at room temperature (e.g., about 25°C). In some non-limiting examples, the exposed layer surface 11 subjected to a vapor flux 532 of the deposited material 531 (including but not limited to at least one of metals and alloys, including but not limited to Yb, Ag, Mg, and Ag-containing materials (including but not limited to MgAg)) may be positioned about 65 cm away from the evaporation source, through which the deposited material 531 (including but not limited to at least one of metals and alloys, including but not limited to Yb, Ag, Mg, and Ag-containing materials (including but not limited to MgAg)) evaporates.

[0324] In some non-limiting examples, the threshold transmittance value can be measured at a wavelength in the visible spectrum, which may be at least about 460 nm, 500 nm, 550 nm, and 600 nm. In some non-limiting examples, the threshold transmittance value can be measured at a wavelength in at least one of the IR and NIR spectra. In some non-limiting examples, the threshold transmittance value can be measured at a wavelength, which may be about 700 nm, 900 nm, and 1000 nm. In some non-limiting examples, the threshold transmittance value may be expressed as a percentage of the incident EM power that can be transmitted through the sample. In some non-limiting examples, the threshold transmittance value may be at least about 60%, 65%, 70%, 75%, 80%, 85%, and 90%.

[0325] Those skilled in the art will understand that high transmittance generally indicates the absence of a sealing coating 140 containing deposited material 531 (including, but not limited to, at least one of Yb, Ag, Mg, and Ag-containing materials (including, but not limited to, MgAg)). On the other hand, low transmittance generally indicates the presence of a sealing coating 140 containing deposited material 531 (including, but not limited to, Yb, Ag, Mg, and Ag-containing materials (including, but not limited to, MgAg)) because the metal film (especially when formed as a sealing coating 140) can exhibit high absorption of EM radiation.

[0326] A series of samples were fabricated to measure the transmittance of the example material and to visually observe whether an Ag-sealing coating 140 was formed on the exposed surface 11 of this example material. This was achieved by depositing an example material coating approximately 50 nm thick on a glass substrate 10, followed by subjecting the exposed surface 11 of the coating to approximately... Each sample was prepared by applying an Ag vapor flux of 532 at a rate of / second until a reference layer thickness of approximately 15 nm was achieved. Each sample was then visually analyzed, and the transmittance through each sample was measured.

[0327] The molecular structures of the example materials used in the samples in this paper are listed in Table 1:

[0328] Table 1

[0329]

[0330]

[0331]

[0332] Those skilled in the art will understand that a sample having little to no deposited material 531 (including, but not limited to, at least one of metals and alloys, including, but not limited to, at least one of Yb, Ag, Mg, and Ag-containing materials (including, but not limited to, MgAg)) can be substantially transparent, while a sample having a large amount of at least one of metals and alloys deposited thereon (including, but not limited to, as a sealing coating 140) can exhibit significantly reduced transmittance in some non-limiting examples. Therefore, the performance of various example coatings as patterned coating 110 can be evaluated by measuring the transmittance through the sample, which can be inversely proportional to at least one of the amount of deposited material 531 deposited thereon and the average layer thickness, including, but not limited to, at least one of metals and alloys, including, but not limited to, in the form of at least one of Yb, Ag, Mg, and Ag-containing materials (including, but not limited to, MgAg), because metal films (including, but not limited to, when formed as sealing coating 140) can exhibit high absorption of EM radiation.

[0333] The presence of a substantially closed coating 140, in which a deposited material 531 in the form of Ag has been formed, was visually confirmed in the samples, and the presence of such a closed coating 140 in these samples was further confirmed by measuring the transmittance through the samples, which showed a transmittance of no more than about 50% at a wavelength of about 460 nm.

[0334] Furthermore, for samples in which the formation of a sealing coating 140 of deposited material 531 (in the form of Ag) was confirmed to be absent, the absence of such a sealing coating 140 in these samples was further confirmed by measuring the EM transmittance through it, which showed a transmittance of at least about 70% (EM radiation at a wavelength of about 460 nm).

[0335] The results are summarized in Table 2 below:

[0336] Table 2

[0337] Material Seal coating of Ag? HT211 exist HT01 exist TAZ exist Balq exist Liq exist Sample material 1 exist Example Material 2 exist Sample Material 3 does not exist Sample Material 4 does not exist Sample Material 5 does not exist Sample Material 6 does not exist Sample Material 7 does not exist Example Material 8 does not exist Example Material 9 exist Sample Material 10 does not exist Example Material 11 does not exist Sample Material 12 does not exist Example Material 13 does not exist Sample Material 14 does not exist Example Material 15 exist Example Material 16 does not exist

[0338] Based on the foregoing, it was found that the materials used in the first 7 samples (HT211 to Example Material 2) in Tables 1 and 2, as well as Example Material 9 and Example Material 15, may have reduced applicability in some scenarios for suppressing the deposition of Deposition Material 531 thereon, including but not limited to at least one of metals and alloys, including but not limited to at least one of Yb, Ag, Mg and Ag-containing materials (including but not limited to MgAg).

[0339] On the other hand, it has been found that Example Materials 4 to Example Materials 16 (other than Example Materials 9 and Example Materials 5) can be used in some scenarios as a patterned coating 110 for suppressing the deposition of Deposited Material 531 thereon, the Deposited Material including but not limited to at least one of metals and alloys, including but not limited to at least one of Yb, Ag, Mg and Ag-containing materials (including but not limited to MgAg).

[0340] Initial sticking probability

[0341] In some non-limiting examples, the initial adhesion probability of the patterned material 411 can be determined by depositing such material as at least one of a film or coating, and in an environment similar to the deposition of the patterned coating 110 within the device 100, having a sufficient thickness to mitigate / reduce any effect on the degree of intermolecular interaction with the underlying layer 710 when deposited on its exposed surface. In some non-limiting examples, the initial adhesion probability can be measured on films / coatings with thicknesses of at least about 20 nm, 25 nm, 30 nm, 50 nm, 60 nm, and 100 nm.

[0342] In some non-limiting examples, at least one of the patterned coating 110 and the patterned material 411 (in some non-limiting examples, when deposited as at least one of some form of film and coating and under conditions similar to the deposition of the patterned coating 110 within the device 100) may have an initial adhesion probability to the deposition of the deposited material 531 of no more than one of about 0.3, 0.2, 0.15, 0.1, 0.08, 0.05, 0.03, 0.02, 0.01, 0.008, 0.005, 0.003, 0.001, 0.0008, 0.0005, 0.0003, and 0.0001.

[0343] In some non-limiting examples, at least one of the patterned coating 110 and the patterned material 411 (in some non-limiting examples, when deposited as at least one of some form of film and coating and under conditions similar to the deposition of the patterned coating 110 within the device 100) may have an initial adhesion probability for the deposition of at least one of Ag and Mg, not exceeding one of about 0.3, 0.2, 0.15, 0.1, 0.08, 0.05, 0.03, 0.02, 0.01, 0.008, 0.005, 0.003, 0.001, 0.0008, 0.0005, 0.0003, and 0.0001.

[0344] In some non-limiting examples, at least one of the patterned coating 110 and the patterned material 411 (in some non-limiting examples, when deposited as at least one of some form of film and coating and under conditions similar to the deposition of the patterned coating 110 within the device 100) may have a polarity of about 0.15-0.0001, 0.1-0.0003, 0.08-0.0005, or 0.08-0.0008. 0.05-0.001, 0.03-0.0001, 0.03-0.0003, 0.03-0.0005, 0.03-0.0008, 0.03-0.001, 0.03-0.005, 0.03-0.008, 0.03-0.01, 0.02-0.0001, 0.02-0.0003, 0.02-0.0005, 0.02-0.0 008, 0.02-0.001, 0.02-0.005, 0.02-0.008, 0.02-0.01, 0.01-0.0001, 0.01-0.0003, 0.01-0.0005, 0.01-0.0008, 0.01-0.001, 0.01-0.005, 0.01-0.008, 0.008-0.0001, 0.008- The initial adhesion probability of the deposition of the deposition material 531 is one of the following values: 0.0003, 0.008-0.0005, 0.008-0.0008, 0.008-0.001, 0.008-0.005, 0.005-0.0001, 0.005-0.0003, 0.005-0.0005, 0.005-0.0008, and 0.005-0.001.

[0345] In some non-limiting examples, at least one of the patterned coating 110 and the patterned material 411 (in some non-limiting examples, when deposited as at least one of some form of film and coating and under conditions similar to the deposition of the patterned coating 110 within the device 100) may have an initial adhesion probability for the deposition of the various deposited materials 531 not exceeding a threshold. In some non-limiting examples, such a threshold may be one of about 0.3, 0.2, 0.18, 0.15, 0.13, 0.1, 0.08, 0.05, 0.03, 0.02, 0.01, 0.008, 0.005, 0.003, and 0.001.

[0346] In some non-limiting examples, at least one of the patterned coating 110 and the patterned material 411 (in some non-limiting examples, when deposited as at least one of a film and a coating in some form and under an environment similar to the deposition of the patterned coating 110 within the device 100) may have an initial adhesion probability for the deposition of a plurality of deposited materials 531 selected from at least one of Ag, Mg, Yb, Cd, and Zn that does not exceed such a threshold. In some non-limiting examples, the patterned coating 110 may exhibit an initial adhesion probability for the deposition of a plurality of deposited materials 531 selected from at least one of Ag, Mg, and Yb that does not exceed such a threshold.

[0347] In some non-limiting examples, at least one of the patterned coating 110 and the patterned material 411 (in some non-limiting examples, when deposited as at least one of a film and a coating in some form and under conditions similar to the deposition of the patterned coating 110 within the device 100) may exhibit an initial adhesion probability for the deposition of the first deposited material 531, including, but not limited to, below a first threshold, and an initial adhesion probability for the deposition of the second deposited material 431, including, but not limited to, below a second threshold. In some non-limiting examples, the first deposited material 531 may be Ag and the second deposited material 431 may be Mg. In some non-limiting examples, the first deposited material 531 may be Ag and the second deposited material 431 may be Yb. In some non-limiting examples, the first deposited material 531 may be Yb and the second deposited material 531 may be Mg. In some non-limiting examples, the first threshold may exceed the second threshold.

[0348] In some non-limiting examples, there may be a scenario where a patterned coating 110 is required to induce the formation of at least one discontinuous layer 160 of particulate structure 150 when the patterned coating 110 is subjected to a vapor flux 532 of deposited material 531. In some non-limiting examples, the patterned coating 110 may exhibit a substantially low initial adhesion probability, such that a closed coating 140 of deposited material 531 may be formed in a second portion 102, which may be substantially free of patterned coating 110, while a discontinuous layer 160 of at least one particulate structure 150 having at least one characteristic may be formed on the patterned coating 110 in the first portion 101. In some non-limiting examples, there may be a scenario where a discontinuous layer 160 of at least one particulate structure 150 of deposited material 531 needs to be formed in the second portion 102 (in some non-limiting examples, the deposited material may be one of a metal and a metal alloy), while simultaneously depositing a sealing coating 140 of deposited material 531 having a thickness, for example, not exceeding one of about 100 nm, 50 nm, 25 nm, and 15 nm. In some non-limiting examples, the amount of deposited material 531 deposited in the first portion 101 as the discontinuous layer 160 of at least one particulate structure 150 may correspond to one of about 1%-50%, 2-25%, 5-20%, and 7-10% of the amount of deposited material 531 deposited in the second portion 102 as the sealing coating 140, and in some non-limiting examples, the sealing coating may correspond to a thickness not exceeding one of at least one of about 100 nm, 75 nm, 50 nm, 25 nm, and 15 nm.

[0349] In some non-limiting examples, there may be a positive correlation between the initial adhesion probability of the deposition of the deposited material 531 on at least one of the patterned coating 110 and the patterned material 411 (in some non-limiting examples, when deposited as at least one of some form of film and coating and under conditions similar to the deposition of the patterned coating 110 within the device 100) and the average layer thickness of the deposited material 531 thereon.

[0350] Sedimentation contrast

[0351] In some non-limiting examples, when deposited on substrate 10, the material (including but not limited to patterned material 411) that can be used as a given at least one of metals and alloys (including but not limited to at least one of Mg, Ag and MgAg) may have substantially high deposition contrast.

[0352] In some non-limiting examples, if the substrate 10 tends to act as a nucleation promoting coating (NPC) 620, and a portion thereof is coated with a material (including but not limited to patterned material 411), which material may tend to act as a NIC that prevents deposition of the deposition material 531, which deposition material includes but is not limited to at least one of a metal and an alloy (including but not limited to at least one of Yb, Ag, Mg and Ag-containing materials (including but not limited to MgAg)), then the coated portion (first portion 101) and the uncoated portion (second portion 102) may tend to have different initial adhesion probabilities and at least one of nucleation rates, so that the deposition material 531 deposited thereon may tend to have different average film thicknesses.

[0353] As used herein, in this scenario, the quotient of the average film thickness of the deposited material 531 in the second portion 102 divided by the average film thickness of the deposited material in the first portion 101 is generally referred to as the deposition contrast. Therefore, if the deposition contrast is substantially high, the average film thickness of the deposited material 531 in the second portion 102 can be substantially greater than the average film thickness of the deposited material 531 in the first portion 101.

[0354] In some non-limiting examples, when deposited on substrate 10, the material of the NIC that can be used as a given deposition material 531 (including, but not limited to, patterning material 411) may have substantially high deposition contrast.

[0355] In some non-limiting examples, there may be a negative correlation between the initial sticking probability for deposition of the deposition material 531 and its deposition contrast in at least one of the patterned coating 110 and the patterned material 411 (in some non-limiting examples, when deposited as at least one of a film and a coating in some form and under an environment similar to the deposition of the patterned coating 110 within the device 100), i.e., a low initial sticking probability may be highly correlated with a high deposition contrast.

[0356] In some non-limiting examples, if the deposition contrast is substantially high, then little or no deposition of material 531 may be deposited in the first part 101 when the deposition of material 531 is sufficient to form its sealing coating 140 in the second part 102.

[0357] In some non-limiting examples, if the deposition contrast is substantially low, a discontinuous layer 160 of at least one particulate structure 150 of the deposition material 531 deposited in the first portion 101 may be present when the deposition of the deposition material 531 is sufficient to form a closed coating 140 in the second portion 102.

[0358] In some non-limiting examples, when the average layer thickness of the sealing coating 140 of the deposited material 531 in the second portion 102 is substantially small (including but not limited to not exceeding one of about 100 nm, 50 nm, 25 nm and 15 nm, including but not limited to forming nanoparticles (NPs) in the first portion 101), there may be scenarios where it is necessary to form at least one discontinuous layer 160 of at least one particulate structure 150 of the deposited material 531 in the first portion 101, wherein such NPs are required to absorb EM radiation, including but not limited to protecting the underlying layer 710 from EM radiation with a wavelength not exceeding about 460 nm.

[0359] In some non-limiting examples, in such scenarios, a deposition contrast of approximately 2-100, 4-50, 5-20, and 10-15 may be applicable.

[0360] In some non-limiting examples, materials with substantially low deposition contrast relative to the deposition of deposition material 531 (including, but not limited to, patterned material 411) may have reduced applicability in some scenarios where substantially high deposition contrast is required, including, but not limited to, scenarios where the average layer thickness of deposition material 531 in the first part 101 is large, including, but not limited to, at least one of about 95 nm, 45 nm, 20 nm, 10 nm and 8 nm.

[0361] In some non-limiting examples, materials with substantially low deposition contrast relative to the deposition of deposition material 531 (including, but not limited to, patterned material 411) may have reduced applicability in some scenarios requiring substantially high deposition contrast (including, but not limited to, scenarios where at least one of the sealing coating 140 and high-density particulate structure 150 is substantially absent in the first part 101, including, but not limited to, scenarios where the average layer thickness of deposition material 531 in the second part 102 is large (including, but not limited to, at least one of about 95 nm, 45 nm, 20 nm, 10 nm and 8 nm), including, but not limited to, scenarios where the absorption of EM radiation is substantially absent in at least one of the visible spectrum and NIR spectrum (including, but not limited to, scenarios where increased transparency to EM radiation with a wavelength of at least about 460 nm is required).

[0362] In some non-limiting examples, when the average layer thickness of the sealing coating 140 of the deposited material 531 in the second part 102 is substantially high (including, but not limited to, at least one of about 95 nm, 45 nm, 20 nm, 10 nm, and 8 nm), materials with substantially low deposition contrast relative to the deposition of the deposited material 531 (including, but not limited to, patterned material 411) may be suitable in some scenarios where at least one of a discontinuous layer 160 or a low-density granular structure of the granular structure 150 of the deposited material 531 in the first part 101 is required. As a non-limiting example, when the average layer thickness of the deposited material 531 in the second part 102 is substantially high, including, but not limited to, one of about 95 nm, 45 nm, 20 nm, 10 nm, and 8 nm, in some scenarios, a deposition contrast between about 2-100, 4-50, 5-20, and 10-15 may be suitable.

[0363] In some non-limiting examples, if a material (including but not limited to patterned material 411) has a substantially high initial adhesion probability to the deposition of at least one of metals and alloys (including but not limited to at least one of Mg, Ag and MgAg), such a material may tend to have a substantially low deposition contrast.

[0364] surface energy

[0365] In some non-limiting examples, such as those relating to the materials used herein, characteristic surface energy may generally refer to the surface energy measured from such material.

[0366] In some non-limiting examples, characteristic surface energy can be measured from a surface formed by a material deposited (coated) in the form of a thin film.

[0367] Various methods and theories for determining the surface energy of solids are known.

[0368] In some non-limiting examples, the surface energy can be calculated (derived) based on a series of contact angle measurements, wherein various liquids can be brought into contact with the solid surface to measure the contact angle between the liquid-gas interface and the surface. In some non-limiting examples, the surface energy of the solid surface can be equal to the surface tension of the liquid having the highest surface tension that fully wets the surface.

[0369] In some non-limiting examples, the critical surface tension of the surface can be determined according to the Zissman method, as further detailed in WAZisman, Advances in Chemistry 43 (1964), pp. 1-51.

[0370] In some non-limiting examples, the characteristic surface energy of a material (including but not limited to patterned material 411) in a coating (including but not limited to patterned coating 110) can be determined by depositing the material as a substantially pure coating (e.g., a coating formed from a substantially pure material) on substrate 10 and measuring its contact angle with a suitable range of probe liquids.

[0371] In some non-limiting examples, a Zisman plot can be used to determine the contact angles that will result in complete wetting of the surface (ie, a 0° contact angle θ c The highest surface tension value.

[0372] Materials suitable for providing the patterned coating 110 can generally have low surface energy when deposited as a thin film (coating) on ​​a surface. In some non-limiting examples, materials having low surface energy can exhibit low intermolecular forces.

[0373] Without wishing to be bound by any particular theory, it is now assumed that materials with substantially high surface energy are applicable, at least in some applications requiring high-temperature reliability.

[0374] Without wishing to be bound by any particular theory, the inventors have now discovered that a patterned coating 110 comprising a material that exhibits substantially high surface energy when deposited as a thin film can, in some non-limiting examples, form a discontinuous layer 160 of at least one particulate structure 150 of the deposited material 531 in a first portion 101 and a closed coating 140 of the deposited material 531 in a second portion 102, including but not limited to cases where the thickness of the closed coating (as a non-limiting example) is no more than one of about 100 nm, 75 nm, 50 nm, 25 nm, and 15 nm.

[0375] In some non-limiting examples, a series of samples were fabricated to measure the critical surface tension of surfaces formed from various materials. The measurement results are summarized in Table 3:

[0376] Table 3

[0377] Material Critical surface tension (dynes / cm) HT211 25.6 HT01 >24 TAZ 22.4 Balq 25.9 Liq 24 Sample material 1 26.3 Example Material 2 24.8 Sample Material 3 20.0 Sample Material 4 12.4 Example Material 5 15.9 Sample Material 6 21.1 Example Material 7 13.1 Sample Material 8 21 Sample Material 9 18.9 Sample Material 10 16 Example Material 11 13 Example Material 12 13 Sample Material 13 18.5 Sample Material 14 22 Example Material 15 19.4 Example Material 16 22.7

[0378] Based on the aforementioned measurements of the critical surface tension in Table 3 and previous observations regarding one of the substantially closed coatings 140 containing and without Ag in the form of deposited material 531, it has been found that materials forming substantially low surface energy surfaces (in some non-limiting examples, materials with a critical surface tension between about 12 dynes / cm and 23 dynes / cm in some cases) when deposited as coatings (including but not limited to patterned coatings 110) are suitable for forming patterned coatings 110 to inhibit the deposition of deposited material 531 (including but not limited to at least one of Yb, Ag, Mg, and Ag-containing materials (including but not limited to MgAg) thereon).

[0379] Without wishing to be bound by any particular theory, it can be assumed that materials forming surfaces with a surface energy of less than (as a non-limiting example) about 13 dynes / cm may be less suitable as patterning materials in some scenarios 411, because such materials may exhibit at least one of substantially poor adhesion to layers surrounding such materials, low melting point, and low sublimation temperature.

[0380] In some non-limiting examples, when deposited as a thin film (coating) on ​​the exposed layer surface 11, the material (including, but not limited to, patterned material 411, which may tend to act as deposited material 531 (including, but not limited to, at least one of metals and alloys, including, but not limited to, Mg, Ag and Ag-containing materials (including, but not limited to, MgAg)) may tend to exhibit substantially low surface energy)

[0381] In some non-limiting examples, when deposited as a thin film (coating) on ​​the exposed layer surface 11, the material (including, but not limited to, patterned material 411) may tend to exhibit substantially low surface energy.

[0382] In some non-limiting examples, materials with substantially low surface energy (including but not limited to patterned material 411) may tend to exhibit substantially low intermolecular forces.

[0383] In some non-limiting examples, there may be scenarios where a patterned material 411 with a substantially low surface energy that is not excessively low may be required.

[0384] In some non-limiting examples, materials with substantially high surface energy (including but not limited to patterned material 411) may be suitable for some scenarios where optical techniques are used to detect films of such materials.

[0385] Without wishing to be bound by any particular theory, it may be assumed that, in some non-limiting examples, materials with substantially high surface energy (including, but not limited to, patterned material 411) may be suitable for some scenarios requiring substantially high temperature reliability.

[0386] In some non-limiting examples, when the average layer thickness of the continuous coating 140 of at least one of the metals and alloys in the second part 102 is substantially low (including but not limited to not exceeding one of about 100 nm, 50 nm, 25 nm and 15 nm), a material with substantially high surface energy (including but not limited to patterned material 411) that can be used as a NIC of at least one of the metals and alloys (including but not limited to Mg, Ag and Ag-containing materials (including but not limited to MgAg)) may be suitable in some scenarios where a discontinuous layer 160 of the particulate structure 150 of at least one of the metals and alloys in the first part 101 is required.

[0387] In some non-limiting examples, when the average layer thickness of the closed coating 140 of the deposited material 531 in the second part 102 is substantially high (including but not limited to at least one of about 95 nm, 45 nm, 20 nm, 10 nm and 8 nm), a material with substantially low surface energy (which can be used as a NIC of the deposited material 531, including but not limited to patterned material 411, the deposited material including but not limited to at least one of metals and alloys, including but not limited to at least one of Yb, Ag, Mg and Ag-containing materials (including but not limited to MgAg)) may be suitable in some scenarios where one of the discontinuous layer 160 of the particulate structure 150 of the deposited material 531 in the first part 101 and a low-density particulate structure is required.

[0388] In some non-limiting examples, the surface of at least one of the patterned coating 110 and the patterned material 411 (in some non-limiting examples, when deposited as at least one of some form of film and coating and under conditions similar to the deposition of the patterned coating 110 within a device 100 containing the compound described herein) may exhibit a surface energy not exceeding one of about 24 dynes / cm, 22 dynes / cm, 20 dynes / cm, 18 dynes / cm, 16 dynes / cm, 15 dynes / cm, 13 dynes / cm, 12 dynes / cm and 11 dynes / cm.

[0389] In some non-limiting examples, and in various non-limiting examples, the surface values ​​herein may correspond to such values ​​measured at approximately normal temperature and pressure (NTP), which may correspond to a temperature of 20°C and an absolute pressure of 1 atm.

[0390] In some non-limiting examples, the surface energy may be at least one of about 6 dynes / cm, 7 dynes / cm and 8 dynes / cm.

[0391] In some non-limiting examples, the surface energy may be one of about 10 dynes / cm to 20 dynes / cm and 13 dynes / cm to 19 dynes / cm.

[0392] temperature

[0393] Glass transition temperature

[0394] In some non-limiting examples, at least one of the patterned coating 110 and the patterned material 411 (in some non-limiting examples, when deposited as at least one of some form of film and coating and under conditions similar to the deposition of the patterned coating 110 within the device 100) may have a glass transition temperature of at least one of about 300°C, 150°C, and 130°C, and not exceeding one of about 30°C, 0°C, -30°C, and -50°C.

[0395] Sublimation temperature

[0396] In some non-limiting examples, materials with substantially low intermolecular forces (including, but not limited to, patterned material 411) may tend to exhibit substantially low sublimation temperatures.

[0397] In some non-limiting examples, materials with substantially low sublimation temperatures (including, but not limited to, patterned material 411) may have reduced applicability for manufacturing processes that may require substantially precise control of the average layer thickness of the deposited material film.

[0398] In some non-limiting examples, materials with sublimation temperatures not exceeding one of about 140°C, 120°C, 110°C, 100°C, and 90°C (including but not limited to patterned material 411) may tend to encounter constraints on at least one of the deposition rate and average layer thickness of the film, which includes such materials that can be deposited using known deposition methods (including but not limited to vacuum thermal evaporation).

[0399] In some non-limiting examples, materials with substantially high sublimation temperatures (including, but not limited to, patterned material 411) may be suitable for some scenarios where substantially high precision is required in controlling the average layer thickness of films comprising such materials.

[0400] In some non-limiting examples, the patterning material may have a sublimation temperature between about 100°C-320°C, 120°C-300°C, 140°C-280°C, and 150°C-250°C. In some non-limiting examples, such a sublimation temperature may allow the patterning material 411 to be deposited substantially easily as a coating using PVD.

[0401] In some non-limiting examples, materials having substantially low intermolecular forces can exhibit a substantially low sublimation temperature.

[0402] In some non-limiting examples, materials with substantially low sublimation temperatures (including, but not limited to, patterned material 411) may have reduced applicability for manufacturing processes that may require substantially precise control of the average layer thickness of the closed coating 140.

[0403] In some non-limiting examples, materials with sublimation temperatures not exceeding one of about 140°C, 120°C, 110°C, 100°C, and 90°C (including but not limited to patterned material 411) may tend to encounter constraints on at least one of the deposition rate and average layer thickness of the film, which includes such materials that can be deposited using known deposition methods (including but not limited to vacuum thermal evaporation).

[0404] In some non-limiting examples, materials with substantially high sublimation temperatures (including, but not limited to, patterned material 411) may be suitable for some scenarios where substantially high precision is required in controlling the average layer thickness of films comprising such materials.

[0405] The sublimation temperature of the material (including but not limited to patterned material 411) can be determined using a variety of methods that are obvious to those skilled in the art, including but not limited to, by sublimation in an evaporation source under substantially high vacuum (in some non-limiting examples, at about 10 °C). -4 Heating material in a crucible (including, but not limited to, a container) and by determining the achievable temperature, to perform at least one of the following:

[0406] Observing when material begins to deposit onto the exposed layer surface 11 on a QCM mounted a fixed distance from the crucible;

[0407] • Observe the specific deposition rate on the exposed layer surface 11 of a QCM mounted at a fixed distance from the crucible. In some non-limiting examples, for / second; and

[0408] • The threshold vapor pressure of the material is reached, which in some non-limiting examples is about 10. -4 To and 10 -5 One of the entrusted ones.

[0409] In some non-limiting examples, in order to determine the sublimation temperature, the QCM can be installed at a distance of approximately 65 cm from the crucible.

[0410] In some non-limiting examples, the patterned material 411 may have a sublimation temperature between about 100°C-320°C, 100°C-300°C, 120°C-300°C, 100°C-250°C, 140°C-280°C, 120°C-230°C, 130°C-220°C, 140°C-210°C, 140°C-200°C, 150°C-250°C, and 140°C-190°C.

[0411] Melting point

[0412] In some non-limiting examples, materials having substantially low intermolecular forces, including but not limited to patterning material 411 , may tend to exhibit substantially low melting points.

[0413] In some non-limiting examples, materials with substantially low melting points (including, but not limited to, patterned material 411) may have reduced applicability in some scenarios where significant temperature reliability is required for temperatures not exceeding one of about 60°C, 80°C, and 100°C, in some non-limiting examples, because of the change in the physical properties of such materials at operating temperatures close to their melting points.

[0414] In some non-limiting examples, materials with a melting point of about 120°C may have reduced applicability in some scenarios where substantially high temperature reliability (including, but not limited to, at least about 100°C) is required.

[0415] In some non-limiting examples, materials having substantially high melting points (including but not limited to patterning material 411 ) may have applicability in some scenarios requiring substantially high temperature reliability.

[0416] In some non-limiting examples, at least one of the patterned coating 110 and its compounds may have a melting temperature of at least one of about 90°C, 100°C, 110°C, 120°C, 140°C, 150°C and 180°C.

[0417] Cohesive energy

[0418] According to Young's equation (Equation (13)), the cohesive energy (fracture toughness / cohesive strength) of a material tends to be proportional to its surface energy (see Young, Thomas (1805) "An essay on the cohesion of fluids", Philosophical Transactions of the Royal Society of London, 95:65-87).

[0419] According to Lindemann’s criteria, the cohesive energy of a material may tend to be proportional to its melting temperature (see Nanda, KK, Sahu, SN and Behera, SN (2002), “Liquid-drop model for the size-dependent melting of low-dimensional systems” Phys. Rev. A. 66(1): 013208).

[0420] In some non-limiting examples, materials with substantially low intermolecular forces (including, but not limited to, patterned material 411) may tend to exhibit substantially low cohesive energy.

[0421] In some non-limiting examples, materials with substantially low cohesive energy (including, but not limited to, patterned material 411) may have reduced suitability in some scenarios requiring significant fracture toughness (including, but not limited to, devices 100 that may tend to withstand at least one of shear and bending stresses during at least one of manufacturing and use), because such materials may tend to crack (fracture) in such scenarios. In some non-limiting examples, materials with cohesive energy not exceeding about 30 dynes / cm (including, but not limited to, patterned material 411) may have reduced suitability in some scenarios of devices 100 fabricated on flexible substrate 10.

[0422] In some non-limiting examples, materials with substantially high cohesive energy (including but not limited to patterned material 411) may be suitable for some scenarios where substantially high reliability is required under at least one of shear stress and bending stress, including but not limited to devices 100 fabricated on flexible substrate 10.

[0423] In some non-limiting examples, materials with substantially low but not excessively low surface energy (including, but not limited to, patterned material 411) may be suitable for some scenarios where significant reliability is required under at least one of shear and bending stresses, including, but not limited to, devices 100 fabricated on flexible substrate 10.

[0424] Optical / bandgap

[0425] In this disclosure, semiconductor materials can be described as materials that typically exhibit a band gap. In some non-limiting examples, the band gap may be formed between the highest occupied molecular orbital (HOMO) and the lowest unoccupied molecular orbital (LUMO) of the semiconductor material. Semiconductor materials may therefore tend to exhibit conductivity substantially no greater than that of conductive materials (including, but not limited to, at least one of metals and alloys), but substantially at least as large as that of insulating materials (including, but not limited to, glass). In some non-limiting examples, the semiconductor material may include organic semiconductor materials. In some non-limiting examples, the semiconductor material may include inorganic semiconductor materials.

[0426] In some non-limiting examples, including but not limited to the optical bandgap of patterned material 411, the optical bandgap may tend to correspond to the HOMO-LUMO bandgap of that material.

[0427] In some non-limiting examples, materials with substantially large / wide optical (HOMO-LUMO bandgap) (including but not limited to patterned material 411) may tend to exhibit substantially weak, including but not limited to, photoluminescence in at least one of the deep blue region of the visible spectrum, the near-UV spectrum, the visible spectrum, and the NIR spectrum.

[0428] In some non-limiting examples, materials with substantially small HOMO-LUMO band gaps may be applicable in some scenarios where optical techniques are used to detect films of materials.

[0429] In some non-limiting examples, the optical bandgap of the patterned material 411 may be wider than the photon energy of the EM radiation emitted by the source, so that the patterned material 411 does not undergo photoexcitation when subjected to such EM radiation.

[0430] Refractive index and extinction coefficient

[0431] In some non-limiting examples, at least one of the patterned coating 110 and the patterned material 411 (in some non-limiting examples, when deposited as at least one of some form of film and coating and under conditions similar to the deposition of the patterned coating 110 within the device 100) may have a low refractive index.

[0432] In some non-limiting examples, at least one of the patterned coating 110 and the patterned material 411 (in some non-limiting examples, when deposited as at least one of some form of film and coating and under conditions similar to the deposition of the patterned coating 110 within the device 100) may have a refractive index of no more than one of about 1.55, 1.5, 1.45, 1.43, 1.4, 1.39, 1.37, 1.35, 1.32 and 1.3 for EM radiation at a wavelength of 550 nm.

[0433] In some non-limiting examples, the refractive index of the patterned coating 110 may not exceed about 1.7. In some non-limiting examples, the refractive index of the patterned coating 110 may not exceed one of about 1.6, 1.5, 1.4, and 1.3. In some non-limiting examples, the refractive index of the patterned coating 110 may be one of about 1.2-1.6, 1.2-1.5, and 1.25-1.45. As further described in the various non-limiting examples above, the patterned coating 110 exhibiting a substantially low refractive index may be suitable in some scenarios for enhancing (including but not limited to) at least one of the optical properties and performance of the device 100 by enhancing external coupling of EM radiation emitted by the optoelectronic device 200.

[0434] Without being bound by any particular theory, it has been observed that providing a patterned coating 110 with a substantially low refractive index can (at least in some devices 100) increase the transmittance of external EM radiation through its second portion 102. In some non-limiting examples, when the patterned coating 110 has a substantially low refractive index relative to a similarly constructed device 100 in which such a low-refractive-index patterned coating 110 is not provided, a device 100, including an air gap, may exhibit substantially high transmittance when arranged near the patterned coating 110.

[0435] In some non-limiting examples, a series of samples were fabricated to measure the refractive index of coatings formed from some of the various example materials at a wavelength of 550 nm. The measurement results are summarized in Table 4 below:

[0436] Table 4

[0437] Material Refractive index HT211 1.76 HT01 1.80 TAZ 1.69 Balq 1.69 Liq 1.64 Example Material 2 1.72 Example Material 3 1.37 Example Material 5 1.38 Sample Material 7 1.3 Example Material 8 1.37 Example Material 10 1.36 Example Material 11 1.34 Example Material 12 1.3

[0438] Based on the aforementioned measurements of refractive index in Table 4, and previous observations in Table 4 regarding one of the substantially closed coatings 140 with and without Ag, it has been found that materials forming low-refractive-index coatings (in some non-limiting examples, materials with refractive indices not exceeding one of about 1.4 and 1.38) may be suitable in some scenarios where patterned coatings 110 are formed to substantially suppress the deposition of deposited materials 531 (including, but not limited to, at least one of metals and alloys, including, but not limited to, at least one of Yb, Ag, Mg, and Ag-containing materials (including, but not limited to, MgAg)) thereon.

[0439] In some non-limiting examples, at least one of the patterned coating 110 and the patterned material 411 (in some non-limiting examples, when deposited as at least one of some form of film and coating and under conditions similar to the deposition of the patterned coating 110 within the device 100) may have a low refractive index.

[0440] In some non-limiting examples, at least one of the patterned coating 110 and the patterned material 411 (in some non-limiting examples, when deposited as at least one of some form of film and coating and under conditions similar to the deposition of the patterned coating 110 within the device 100) may have a refractive index of no more than one of about 1.55, 1.5, 1.45, 1.43, 1.4, 1.39, 1.37, 1.35, 1.32 and 1.3 for EM radiation at a wavelength of 550 nm.

[0441] In some non-limiting examples, the patterned coating 110 may be at least one of being substantially transparent and EM radiation transmissive.

[0442] In some non-limiting examples, at least one of the patterned coating 110 and the patterned material 411 (in some non-limiting examples, when deposited as at least one of some form of film and coating and under conditions similar to the deposition of the patterned coating 110 within the device 100) may have an extinction coefficient of no more than about 0.01 for photons at wavelengths of at least about 600 nm, 500 nm, 460 nm, 420 nm and 410 nm.

[0443] In some non-limiting examples, at least one of the patterned coating 110 and the patterned material 411 (in some non-limiting examples, when deposited as at least one of some form of film and coating and under conditions similar to the deposition of the patterned coating 110 within the device 100) may have an extinction coefficient of at least about 0.05, 0.1, 0.2 and 0.5 for EM radiation at wavelengths not exceeding one of about 400 nm, 390 nm, 380 nm and 370 nm.

[0444] In this way, at least one of the patterned coating 110 and the patterned material 411 (when deposited as at least one of some form of film and coating and under conditions similar to the deposition of the patterned coating 110 within the device 100) can absorb EM radiation in the UVA spectrum incident on the device 100, thereby reducing the possibility that EM radiation in the UVA spectrum may impose constraints on at least one of device performance, device stability, device reliability, and device lifetime.

[0445] In some non-limiting examples, the patterned coating 110 may exhibit an extinction coefficient of no more than one of about 0.1, 0.08, 0.05, 0.03 and 0.01 in the visible spectrum.

[0446] Photoluminescence, absorption and other optical effects

[0447] In some non-limiting examples, photoluminescence of at least one of the coating and the material can be observed through a photoexcitation process. During the photoexcitation process, at least one of the coating and the material can be subjected to EM radiation emitted by an EM light source (including but not limited to a UV lamp).

[0448] When the emitted EM radiation is absorbed by at least one of the coating and the material, electrons in the at least one of the coating and the material can be temporarily excited. After excitation, one or more relaxation processes may occur, including but not limited to at least one of fluorescence and phosphorescence, wherein the EM radiation may be emitted from at least one of the coating and the material.

[0449] During this process, EM radiation emitted from at least one of the coating and the material can be detected, for example, by a photodetector to characterize the photoluminescence properties of at least one of the coating and the material.

[0450] As used herein, the wavelength of photoluminescence associated with at least one of the coatings and materials can generally refer to the wavelength of EM radiation emitted by at least one of such coatings and materials due to the relaxation of electrons from an excited state. As will be understood by those skilled in the art, the wavelength of light emitted by at least one of the coatings and materials due to a photoexcitation process may, in some non-limiting examples, be longer than the wavelength of the radiation used to induce photoexcitation. Various techniques known in the art can be used to detect photoluminescence, including but not limited to fluorescence microscopy.

[0451] In some non-limiting examples, the optical bandgap of various coatings / materials may correspond to the bandgap of the coating / material from which one of the EM radiation is absorbed and emitted during the photoexcitation process.

[0452] In some non-limiting examples, photoluminescence can be detected by subjecting the coating / material to EM radiation with a wavelength corresponding to the UV spectrum (in some non-limiting examples, such as one of UVA and UVB). In some non-limiting examples, the EM radiation used to induce photoexcitation may have a wavelength of about 365 nm.

[0453] In some non-limiting examples, the patterned material 411 may not exhibit photoluminescence at any wavelength corresponding to the visible spectrum.

[0454] In some non-limiting examples, the patterned material 411 may not exhibit photoluminescence when subjected to EM radiation having a wavelength of at least about 300 nm, 320 nm, 350 nm and 365 nm.

[0455] As used herein, at least one of the photoluminescent coatings and materials may be at least one of the coatings and materials that exhibit photoluminescence at a certain wavelength when irradiated with excitation radiation of a certain wavelength. In some non-limiting examples, at least one of the photoluminescent coatings and materials may exhibit photoluminescence at wavelengths exceeding about 365 nm when irradiated with excitation radiation of a wavelength of 365 nm, which is the wavelength of radiation sources commonly used in fluorescence microscopy.

[0456] At least one of the photoluminescent coatings and materials can be detected on the substrate 10 using standard optical techniques (including, but not limited to, fluorescence microscopy), which can determine the presence of at least one of the coatings and materials.

[0457] In some non-limiting examples, the coating (including, but not limited to, patterned coating 110) may exhibit photoluminescence by including materials that exhibit photoluminescence.

[0458] In some non-limiting examples, the presence of such patterned coating 110 can be detected (observed) using conventional characterization techniques such as fluorescence microscopy when depositing the patterned coating 110.

[0459] In some non-limiting examples, the coating (including, but not limited to, patterned coating 110) may exhibit photoluminescence at wavelengths corresponding to at least one of the UV spectrum and the visible spectrum, including, but not limited to, by comprising a material exhibiting photoluminescence. In some non-limiting examples, photoluminescence may occur at wavelengths (ranges) corresponding to the UV spectrum (including, but not limited to, one of the UVA spectrum and the UVB spectrum). In some non-limiting examples, photoluminescence may occur at wavelengths (ranges) corresponding to the visible spectrum. In some non-limiting examples, photoluminescence may occur at wavelengths (ranges) corresponding to one of deep blue and near-UV.

[0460] In some non-limiting examples, the material of the patterned coating 110 may exhibit photoluminescence in at least one of the following: conjugated bonds, aryl moieties, electron-donating / electron-withdrawing groups, and heavy metal complexes.

[0461] In some non-limiting examples, coatings (including but not limited to patterned coating 110) composed of materials (including but not limited to patterned material 411) having substantially weak to no photoluminescence (absorption) in the wavelength range of at least about one of 365 nm and 460 nm may tend not to act as one of a photoluminescent coating and an absorbing coating, and may have applicability in some scenarios requiring substantially high transparency in at least one of the visible and NIR spectra.

[0462] In some non-limiting examples, such materials may tend to exhibit substantially low photoluminescence when subjected to EM radiation having a wavelength of approximately 365 nm, which is the wavelength of radiation sources often used in fluorescence microscopy. The presence of such materials (including but not limited to patterned material 411), particularly when deposited as thin films in some non-limiting examples, may have reduced suitability in some scenarios requiring typical optical detection techniques (including but not limited to fluorescence microscopy). This may impose constraints on some scenarios where such materials may be selectively deposited on portions of substrate 10, such as by FMM, as there may be some scenarios for determining the presence of such materials after deposition.

[0463] In some non-limiting examples, materials having substantially low to no absorption at wavelengths of at least about 365 nm and 460 nm may be suitable for some scenarios where substantially high transparency is required in at least one of the visible and NIR spectra.

[0464] In some non-limiting examples, at least one of the patterned coating 110 and the patterned material 411 (in some non-limiting examples, when deposited as at least one of some form of film and coating and under conditions similar to the deposition of the patterned coating 110 within the device 100) may not substantially attenuate the EM radiation passing through it in at least the visible spectrum.

[0465] In some non-limiting examples, at least one of the patterned coating 110 and the patterned material 411 (when deposited as at least one of some form of film and coating and under conditions similar to the deposition of the patterned coating 110 within the device 100) may substantially not attenuate the EM radiation passing through it in at least one of the IR and NIR spectra.

[0466] In this way, at least one of the patterned coating 110 and the patterned material 411 (when deposited as at least one of some form of film and coating and under conditions similar to the deposition of the patterned coating 110 within the device 100) can absorb EM radiation in the UVA spectrum incident on the device 100, thereby reducing the possibility that EM radiation in the UVA spectrum may impose constraints on at least one of device performance, device stability, device reliability, and device lifetime.

[0467] In some non-limiting examples, the patterned coating 110 may serve as an optical coating.

[0468] In some non-limiting examples, the patterned coating 110 may modify at least one of at least one property and at least one characteristic of the EM radiation (including, but not limited to, photon forms) emitted by the device 100. In some non-limiting examples, the patterned coating 110 may exhibit a degree of haze, resulting in the scattering of the emitted EM radiation. In some non-limiting examples, the patterned coating 110 may include a crystalline material for scattering EM radiation transmitted through it. In some non-limiting examples, such scattering of EM radiation may be beneficial for enhancing external coupling of EM radiation from the device 100. In some non-limiting examples, the patterned coating 110 may initially be deposited as a substantially amorphous (including, but not limited to, substantially amorphous) coating, and subsequently, after its deposition, the patterned coating 110 may become crystalline and subsequently used for optical coupling.

[0469] In some non-limiting examples, the patterned material 411 may exhibit insignificant, including but not limited to, no, absorption when subjected to EM radiation having a wavelength of at least about 300 nm, 320 nm, 350 nm and 365 nm.

[0470] In some non-limiting examples, the patterned coating 110 may not exhibit any significant absorption of EM radiation at any wavelength corresponding to the visible spectrum.

[0471] Average layer thickness

[0472] In some non-limiting examples, the average layer thickness of the patterned coating 110 may be no more than one of about 10 nm, 8 nm, 7 nm, 6 nm and 5 nm.

[0473] weight

[0474] Without being bound by any particular theory, it can be assumed that for compounds suitable for forming surfaces with substantially low surface energy, there may be scenarios where, in at least some applications, the molecular weight of such compounds is required to be one of approximately 800 g / mol-3,000 g / mol, 900 g / mol-2,000 g / mol, 900 g / mol-1,800 g / mol, and 900 g / mol-1,600 g / mol.

[0475] In some non-limiting examples, the molecular weight of at least one patterning material 411 compound may not exceed about 5,000 g / mol. In some non-limiting examples, the molecular weight of the compound may not exceed one of about 4,500 g / mol, 4,000 g / mol, 3,800 g / mol, and 3,500 g / mol.

[0476] In some non-limiting examples, the molecular weight of at least one patterning material 411 compound may be at least about 800 g / mol. In some non-limiting examples, the molecular weight of the compound may be at least one of at least about 1,500 g / mol, 1,700 g / mol, 2,000 g / mol, 2,200 g / mol, and 2,500 g / mol.

[0477] In some non-limiting examples, the molecular weight of the compound can be about one of 800 g / mol-3,000 g / mol, 900 g / mol-2,000 g / mol, 900 g / mol-1,800 g / mol, and 900 g / mol-1,600 g / mol.

[0478] In some non-limiting examples, the percentage of the molar weight of this compound attributable to the presence of F atoms may be one of approximately 40%-90%, 45%-85%, 50%-80%, 55%-75%, and 60%-75%. In some non-limiting examples, F atoms may constitute the majority of the molar weight of this compound.

[0479] Interrelationships between patterned coating properties

[0480] Without being bound by any particular theory, it can be assumed that an exposed layer surface 11 exhibiting a low initial adhesion probability relative to the deposited material 531 (including, but not limited to, at least one of metals and alloys, including but not limited to, Yb, Ag, Mg, and Ag-containing materials (including but not limited to MgAg)) can exhibit high transmittance. Without being bound by any particular theory, it can be assumed that an exposed layer surface 11 exhibiting a high adhesion probability relative to the deposited material 531 (including, but not limited to, at least one of metals and alloys, including but not limited to, Yb, Ag, Mg, and Ag-containing materials (including but not limited to MgAg)) can exhibit low transmittance.

[0481] In some non-limiting examples, if the material has substantially high surface energy, then the material including but not limited to patterned material 411 may tend to have substantially high initial adhesion probability relative to the deposition of the deposited material, including but not limited to at least one of metals and alloys, including but not limited to at least one of Yb, Ag, Mg and Ag-containing materials (including but not limited to MgAg).

[0482] In some non-limiting examples, patterned material 411 having substantially low surface tension that is not excessively low may be suitable for some scenarios requiring substantially high melting points, including but not limited to about 15 dynes / cm to 22 dynes / cm.

[0483] In some non-limiting examples, materials with substantially low but not excessively low surface tension (including, but not limited to, patterned material 411) may be suitable for some scenarios requiring substantially high sublimation temperatures.

[0484] In some non-limiting examples, coatings (including, but not limited to, patterned coating 110, which consists of materials (including, but not limited to, patterned material 411)) with substantially low surface energy and substantially high sublimation temperature) may be suitable in some scenarios where substantially high precision is required in controlling the average layer thickness of films including such materials.

[0485] Without wishing to be bound by any particular theory, it may be assumed that a material forming an exposed layer surface 11 with a surface energy not exceeding (in some non-limiting examples) about 13 dynes / cm may not be suitable as a patterning material 411 in some scenarios because such a material may exhibit at least one of substantially low adhesion to layers surrounding it, substantially low melting point, and substantially low sublimation temperature.

[0486] In some non-limiting examples, the patterned coating 110, having substantially low surface energy and substantially high melting point, may be suitable for some scenarios requiring substantially high reliability. In some non-limiting examples, considering that a single material with low surface energy may tend to exhibit a low melting point, achieving this combination from a single material may be challenging.

[0487] Without wishing to be bound by any particular theory, it may be assumed that such compounds (including, but not limited to, at least one patterning material 411) may exhibit at least one property that may be suitable in certain circumstances for forming at least one of coatings and layers having at least one of the following: substantially high melting point, in some non-limiting examples, at least 100°C; substantially low surface energy; and substantially amorphous structure, in some non-limiting examples, when deposited using a vacuum-based thermal evaporation process.

[0488] In some non-limiting examples, coatings (including, but not limited to, patterned coating 110) having substantially low surface energy, substantially high cohesive energy, and substantially high melting point may be suitable for scenarios requiring substantially high reliability under various conditions. In some non-limiting examples, considering that a single material having substantially low surface energy may tend to exhibit substantially low cohesive energy and substantially low melting point, achieving such a combination from a single material may be challenging.

[0489] In some non-limiting examples, materials with substantially low surface energy and substantially high cohesive energy (including, but not limited to, patterned material 411) may be suitable for scenarios requiring substantially high reliability under at least one of shear stress and bending stress. In some non-limiting examples, considering that films formed substantially from a single material with substantially low surface energy may tend to exhibit substantially low cohesive energy, achieving such a combination from a single material may be challenging.

[0490] In some non-limiting examples, materials with substantially low surface energy (including, but not limited to, patterned material 411) may tend to exhibit at least one of substantially large optical band gap and substantially wide optical band gap. In some non-limiting examples, the optical band gap of materials including, but not limited to, patterned material 411 may tend to correspond to the HOMO-LUMO band gap of that material.

[0491] Generally, a material having a low surface energy may exhibit an optical band gap that is at least one of large and wide, which, as a non-limiting example, may correspond to the material's HOMO-LUMO energy gap.

[0492] It has now been found that patterned coatings 110 formed from compounds exhibiting substantially low surface energy can also exhibit substantially low refractive index.

[0493] In some non-limiting examples, at least one of the patterned coating 110 and the patterned material 411 may exhibit a surface energy of no more than about 25 dynes / cm and a refractive index of no more than about 1.45. In some non-limiting examples, at least one of the patterned coating 110 and the patterned material 711 may include a material exhibiting a surface energy of no more than about 20 dynes / cm and a refractive index of no more than about 1.4.

[0494] In some non-limiting examples, materials having substantially low surface energy (including but not limited to patterned material 411) may be suitable for use in some scenarios where substantially weak to no photoluminescence and absorption are required within a wavelength range of at least about one of 365 nm and 460 nm.

[0495] In some non-limiting examples, materials having at least one of a substantially large optical band gap (and HOMO-LUMO gap) and a substantially wide optical band gap (and HOMO-LUMO gap), including but not limited to patterned material 411, may tend to exhibit substantially weak to no photoluminescence in at least one of the deep blue region of the visible spectrum, the near UV spectrum, the visible spectrum, and the NIR spectrum.

[0496] Without wishing to be bound by any particular theory, it can be hypothesized that for compounds suitable for forming surfaces having substantially low surface energy, there may be a goal where, in at least some applications, such compounds have a molecular weight of one of about 1,500 g / mol-5,000 g / mol, 1,500 g / mol-4,500 g / mol, 1,700 g / mol-4,500 g / mol, 2,000 g / mol-4,000 g / mol, 2,200 g / mol-4,000 g / mol, and 2,500 g / mol-3,800 g / mol.

[0497] At least some materials having at least one of a large and a wide optical bandgap and a HOMO-LUMO bandgap may exhibit substantially weak to no photoluminescence in at least one of the visible spectrum, its deep B (blue) region, and the near-UV spectrum. In some non-limiting examples, materials having a substantially small HOMO-LUMO bandgap may be suitable for applications using optical techniques to detect films of materials. In some non-limiting examples, materials with higher surface energy may be suitable for applications using optical techniques to detect films of materials.

[0498] In some non-limiting examples, materials with substantially large HOMO-LUMO band gaps may be suitable for some scenarios where weak to no photoluminescence or absorption is required in the wavelength range of at least about 365 nm and 460 nm.

[0499] doping

[0500] In some non-limiting examples, the patterned coating 110 may exhibit (including, but not limited to) at least one nucleation site for the deposited material 531 due to at least one of the patterned material 411 used and the deposition environment.

[0501] In some non-limiting examples, the patterned coating 110 may be doped (including, but not limited to, with at least one of covering and supplementing with another material, which may act as at least one of seed crystals or heterogeneous material to serve as such nucleation sites for the deposited material 531. In some non-limiting examples, such another material may include NPC 720 material. In some non-limiting examples, such another material may include at least one of organic materials (in some non-limiting examples, polycyclic aromatic compounds) and materials containing at least one of non-metallic elements (including, but not limited to, at least one of O, S, N, and C, which may be contaminants in at least one of the source material, the equipment used for deposition, and the vacuum chamber environment). In some non-limiting examples, such another material may be deposited as a single layer of a small fraction of its thickness to avoid forming its sealing coating 140. Instead, the monomers of such another material may tend to be spaced apart in a laterally oriented manner to form discrete nucleation sites for the deposited material.

[0502] Various patterned materials

[0503] In some non-limiting examples, a patterned coating 110 of a single patterned material 411 is formed relative to the deposition of a deposited material 531, which includes, but is not limited to, at least one of a given metal and a given alloy, including, but not limited to, Yb, Ag, Mg and Ag-containing materials (including, but not limited to, MgAg), satisfying constraints of at least one material property selected from at least one of the following: initial adhesion probability, transmittance, deposition contrast, surface energy, glass transition temperature, melting point, sublimation temperature, evaporation temperature, cohesive energy, optical band gap, photoluminescence, refractive index, extinction coefficient, absorption, other optical effects, average layer thickness, molecular weight, and composition. For a given scenario, the substantially complex interrelationships between these various material properties may present challenges.

[0504] In some non-limiting examples, the patterned coating 110 may include a variety of materials. In some non-limiting examples, the patterned coating 110 may include a first material and a second material.

[0505] In some non-limiting examples, when deposited as a thin film, at least one of a variety of materials of the patterned coating 110 can be used as the NIC.

[0506] In some non-limiting examples, at least one of the various materials of the patterned coating 110 can be used as a NIC when deposited as a thin film, and another material of the patterned coating forms an NPC 720 when deposited as a thin film. In some non-limiting examples, a first material can form an NPC 720 when deposited as a thin film, and a second material can form a NIC when deposited as a thin film. In some non-limiting examples, the presence of the first material in the patterned coating 110 can lead to an increased initial adhesion probability of the patterned coating compared to a case where the patterned coating 110 is formed by the second material and substantially without the first material.

[0507] In some non-limiting examples, at least one of the materials of the patterned coating 110 may be adapted to form a surface with low surface energy when deposited as a thin film. In some non-limiting examples, when deposited as a thin film, the first material may be adapted to form a surface with a lower surface energy than that provided by a thin film including the second material.

[0508] In some non-limiting examples, the patterned coating 110 may exhibit photoluminescence by including, but not limited to, a material that exhibits photoluminescence.

[0509] In some non-limiting examples, the first material may exhibit photoluminescence at wavelengths corresponding to the visible spectrum, and the second material may not exhibit significant photoluminescence at wavelengths corresponding to the visible spectrum.

[0510] In some non-limiting examples, the second material may exhibit substantially no photoluminescence at any wavelength corresponding to the visible spectrum. In some non-limiting examples, the second material may not exhibit photoluminescence when subjected to EM radiation having a wavelength of at least one of about 300 nm, 320 nm, 350 nm, and 365 nm. In some non-limiting examples, the second material may exhibit minimal to undetectable absorption when subjected to such EM radiation.

[0511] In some non-limiting examples, the second optical bandgap of the second material may be wider than the photon energy of the EM radiation emitted by the source, such that the second material does not undergo photoexcitation when subjected to such EM radiation. However, in some non-limiting examples, the patterned coating 110 containing such a second material may still exhibit photoluminescence when subjected to EM radiation due to the photoluminescence exhibited by the first material. In some non-limiting examples, the presence of the patterned coating 110 can be detected using conventional characterization techniques such as fluorescence microscopy when depositing the patterned coating 110.

[0512] In some non-limiting examples, the first material may have a first optical bandgap, and the second material may have a second optical bandgap. In some non-limiting examples, the second optical bandgap may exceed the first optical bandgap. In some non-limiting examples, the difference between the first optical bandgap and the second optical bandgap may exceed one of about 0.3 Ev, 0.5 Ev, 0.7 Ev, 1 Ev, 1.3 Ev, 1.5 Ev, 1.7 Ev, 2 Ev, 2.5 Ev, and 3 Ev.

[0513] In some non-limiting examples, the first optical band gap may be no more than one of approximately 4.1 Ev, 3.5 Ev, and 3.4 Ev. In some non-limiting examples, the second optical band gap may be greater than one of approximately 3.4 Ev, 3.5 Ev, 4.1 Ev, 5 Ev, and 6.2 Ev.

[0514] In some non-limiting examples, at least one of the first optical bandgap and the second optical bandgap may correspond to the HOMO-LUMO bandgap.

[0515] In some non-limiting examples, the optical band gap of at least one of the various coatings and materials, including but not limited to at least one of the first optical band gap and the second optical band gap, may correspond to an energy gap of the at least one of the coatings and materials from which EM radiation is at least one of absorbed and emitted during the photoexcitation process.

[0516] In some non-limiting examples, the concentration (including but not limited to weight) of the first material in the patterned coating 110 may not exceed the concentration of the second material in the patterned coating 110. In some non-limiting examples, the patterned coating 110 may include at least about 0.1 wt%, 0.2 wt%, 0.5 wt%, 0.8 wt%, 1 wt%, 3 wt%, 5 wt%, 8 wt%, 10 wt%, 15 wt%, and 20 wt% of the first material. In some non-limiting examples, the patterned coating 110 may include no more than about 50 wt%, 40 wt%, 30 wt%, 25 wt%, 20 wt%, 15 wt%, 10 wt%, 8 wt%, 5 wt%, 3 wt%, and 1 wt% of the first material. In some non-limiting examples, the remainder of the patterned coating 110 may consist substantially of the second material. In some non-limiting examples, the patterned coating 110 may include additional materials, including but not limited to at least one of a third and a fourth material.

[0517] In some non-limiting examples, at least one of the materials of the patterned coating 110 (including, but not limited to, the first material and the second material) may include at least one of F and Si. As a non-limiting example, at least one of the first material and the second material may include at least one of F and Si. In some other non-limiting examples, the first material may include at least one of F and Si, and the second material may include at least one of F and Si. In some non-limiting examples, both the first material and the second material may include F. In some non-limiting examples, both the first material and the second material may include Si. In some non-limiting examples, each of the first material and the second material may include at least one of F and Si.

[0518] In some non-limiting examples, at least one of the first and second materials may include both F and Si. In some non-limiting examples, one of the first and second materials may not include at least one of F and Si. In some non-limiting examples, the second material may include at least one of F and Si, and the first material may not include at least one of F and Si.

[0519] In some non-limiting examples, at least one of the materials of the patterned coating 110 (which may be, for example, at least one of a first material and a second material) may include F, and at least one of the other materials of the patterned coating 110 may include sp. 2 C. In some non-limiting examples, at least one of the materials of the patterned coating 110 (including, but not limited to, at least one of the first and second materials) may include F, and at least one of the other materials of the patterned coating 110 may include sp. 3 C. In some non-limiting examples, at least one of the materials of the patterned coating 110 (including, but not limited to, at least one of the first and second materials) may include F and sp. 3 C, and at least one of the other materials of the patterned coating 110 may include sp 2 C. In some non-limiting examples, at least one of the materials of the patterned coating 110 (including, but not limited to, at least one of the first and second materials) may include F and sp. 3 C, where all Fs bonded to C can be bonded to sp 3 C, and at least one of the other materials of the patterned coating 110 may include sp 2 C. In some non-limiting examples, at least one of the materials of the patterned coating 110, including but not limited to at least one of the first and second materials, may include F and sp. 3 C, where all Fs bonded to C can be bonded to sp 3C, and at least one of the other materials of the patterned coating 110 may include sp 2 C and may not include F. As a non-limiting example, in any of the foregoing non-limiting examples, "at least one of the materials of the patterned coating 110" may correspond to the second material, and "at least one of the other materials of the patterned coating 110" may correspond to the first material.

[0520] As will be understood by those skilled in the relevant art, including F, sp 2 C, sp 3 C. The presence of materials in the coating of at least one of the aromatic hydrocarbon moiety, other functional groups and other moieties can be detected using various methods known in the art, including, as a non-limiting example, X-ray photoelectron spectroscopy (XPS).

[0521] In some non-limiting examples, at least one of the materials of the patterned coating 110 (which, as a non-limiting example, may be at least one of a first material and a second material) may include F, and at least one of the other materials of the patterned coating 110 may include an aromatic hydrocarbon portion. In some non-limiting examples, at least one of the materials of the patterned coating 110 (including, but not limited to, at least one of a first material and a second material) may include F, and at least one of the materials of the patterned coating 110 may not include an aromatic hydrocarbon portion. In some non-limiting examples, at least one of the materials of the patterned coating 110 (including, but not limited to, at least one of a first material and a second material) may include F and may not include an aromatic hydrocarbon portion, and at least one of the other materials of the patterned coating 110 may include an aromatic hydrocarbon portion. In some non-limiting examples, at least one of the materials of the patterned coating 110 (including, but not limited to, at least one of a first material and a second material) may include F and may not include an aromatic hydrocarbon portion, and at least one of the other materials of the patterned coating 110 may include an aromatic hydrocarbon portion and may not include F. In some non-limiting examples, the aromatic hydrocarbon moiety may include at least one of a substituted polycyclic aromatic hydrocarbon moiety, an unsubstituted polycyclic aromatic hydrocarbon moiety, a substituted phenyl moiety, and an unsubstituted phenyl moiety.

[0522] In some non-limiting examples, at least one of the materials of the patterned coating 110 (including, but not limited to, at least one of the first and second materials) may include F, and at least one of the other materials of the patterned coating 110 may include a polycyclic aromatic hydrocarbon (PAH) portion. In some non-limiting examples, at least one of the materials of the patterned coating 110 (including, but not limited to, at least one of the first and second materials) may include F, and at least one of the materials of the patterned coating 110 may not include a PAH portion. In some non-limiting examples, at least one of the materials of the patterned coating 110 (including, but not limited to, at least one of the first and second materials) may include F and may not include a PAH portion, and at least one of the other materials of the patterned coating 110 may include a PAH portion and may not include F. In some non-limiting examples, at least one of the materials of the patterned coating 110 (including, but not limited to, at least one of the first and second materials) may include F and may not include a PAH portion, and at least one of the other materials of the patterned coating 110 may include a PAH portion and may not include F.

[0523] In some non-limiting examples, at least one of the materials of the patterned coating 110 (including, but not limited to, at least one of the first and second materials) may include at least one of a fluorocarbon portion and a siloxane portion, and at least one of the other materials of the patterned coating 110 may include a polycyclic aromatic hydrocarbon portion. In some non-limiting examples, at least one of the materials of the patterned coating 110 (including, but not limited to, at least one of the first and second materials) may include at least one of a fluorocarbon portion and a siloxane portion, and at least one of the materials of the patterned coating 110 may not include a polycyclic aromatic hydrocarbon portion. In some non-limiting examples, at least one of the materials of the patterned coating 110 (including, but not limited to, at least one of the first and second materials) may include at least one of a fluorocarbon portion and a siloxane portion and may not include a polycyclic aromatic hydrocarbon portion, and at least one of the other materials of the patterned coating 110 may include a polycyclic aromatic hydrocarbon portion. In some non-limiting examples, at least one of the materials of the patterned coating 110 (including, but not limited to, at least one of the first material and the second material) may include at least one of a fluorocarbon portion and a siloxane portion and may not include a polycyclic aromatic hydrocarbon portion, and at least one of the other materials of the patterned coating 110 may include a polycyclic aromatic hydrocarbon portion and may not include at least one of a fluorocarbon portion and a siloxane portion.

[0524] In some non-limiting examples, at least one of the materials of the patterned coating 110 (including, but not limited to, at least one of the first and second materials) may include F, and at least one of the other materials of the patterned coating 110 may include a phenyl portion. In some non-limiting examples, at least one of the materials of the patterned coating 110 (including, but not limited to, at least one of the first and second materials) may include F, and at least one of the materials of the patterned coating 110 may not include a phenyl portion. In some non-limiting examples, at least one of the materials of the patterned coating 110 (including, but not limited to, at least one of the first and second materials) may include F and may not include a phenyl portion, and at least one of the other materials of the patterned coating 110 may include a phenyl portion and may not include F.

[0525] In some non-limiting examples, at least one of the materials of the patterned coating 110 (including, but not limited to, at least one of the first and second materials) may include at least one of a fluorocarbon compound portion and a siloxane portion, and at least one of the other materials of the patterned coating 110 may include a phenyl portion. In some non-limiting examples, at least one of the materials of the patterned coating 110 (including, but not limited to, at least one of the first and second materials) may include at least one of a fluorocarbon compound portion and a siloxane portion, and at least one of the materials of the patterned coating 110 may not include a phenyl portion. In some non-limiting examples, at least one of the materials of the patterned coating 110 (including, but not limited to, at least one of the first and second materials) may include at least one of a fluorocarbon compound portion and a siloxane portion and may not include a phenyl portion, and at least one of the other materials of the patterned coating 110 may include a phenyl portion. In some non-limiting examples, at least one of the materials of the patterned coating 110 (including, but not limited to, at least one of the first and second materials) may include at least one of a fluorocarbon compound portion and a siloxane portion and may not include a phenyl portion, and at least one of the other materials of the patterned coating 110 may include a phenyl portion and may not include either the fluorocarbon compound portion or the siloxane portion.

[0526] Typically, the molecular structure and molecular composition of the materials of the patterned coating 110 (including, but not limited to, at least one of the first and second materials) may be different. In some non-limiting examples, the materials may be selected such that they have at least one property that is substantially similar to and substantially different from each other, including, but not limited to, at least one of the following: molecular structures of monomers, monomer backbones, and functional groups; presence of common elements; similarity of molecular structures; characteristic surface energy; refractive index; molecular weight; thermal properties, including but not limited to at least one of melting temperature, sublimation temperature, glass transition temperature, and thermal decomposition temperature.

[0527] In some non-limiting examples, as used herein with respect to materials, characteristic surface energy may generally refer to the surface energy measured from such material. As a non-limiting example, characteristic surface energy can be measured from a surface formed by a material deposited in the form of a thin film. Various methods and theories for determining the surface energy of solids are known. As a non-limiting example, surface energy can be determined based on a series of contact angle measurements, wherein various liquids are brought into contact with the solid surface to measure the contact angle between the liquid-gas interface and the surface. In some non-limiting examples, the surface energy of the solid surface may be equal to the surface tension of the liquid having the highest surface tension that fully wets the surface. As a non-limiting example, a Zissman diagram can be used to determine the highest surface tension value that will result in full wetting of the surface (i.e., a 0° contact angle).

[0528] In some non-limiting examples, at least one of the first and second materials of the patterned coating 110 may be an oligomer.

[0529] In some non-limiting examples, the first material may include a first oligomer, and the second material may include a second oligomer. Each of the first and second oligomers may include a variety of monomers.

[0530] In some non-limiting examples, at least one segment of the molecular structure of at least one of the materials of the patterned coating 110 (including, but not limited to, at least one of the first material and the second material) can be represented by formula (I):

[0531] (Mon) n (I)

[0532] in:

[0533] Mon represents a monomer, and

[0534] n is an integer of at least 2.

[0535] In some non-restrictive examples, n can be an integer between approximately 2-100, 2-50, 3-20, 3-15, 3-10, and 3-7.

[0536] In some non-limiting examples, the molecular structures of the first and second materials of the patterned coating 110 can each be independently represented by formula (I). As a non-limiting example, at least one of the monomers and n of the first material can be different from those of the second material. In some non-limiting examples, n of the first material can be the same as n of the second material. In some non-limiting examples, n of the first material can be different from n of the second material. In some non-limiting examples, the first and second materials can be oligomers.

[0537] In some non-limiting examples, the monomer may include at least one of F and Si.

[0538] In some non-limiting examples, the monomer may include a functional group. In some non-limiting examples, at least one functional group of the monomer may have low surface tension. In some non-limiting examples, at least one functional group of the monomer may include at least one of F and Si. In some non-limiting examples, such a functional group may include at least one of a fluorocarbon group and a siloxane group. In some non-limiting examples, the monomer may include a silsesquioxane group.

[0539] While some non-limiting examples have been described herein with reference to the first and second materials, it should be understood that the patterned coating may also include at least one additional material, and the description of at least one of the molecular structure and properties of the first material, the second material, the first oligomer, and the second oligomer may be applied to the additional material that may be included in the patterned coating 110.

[0540] The surface tension of a fragment attributable to the molecular structure (including, but not limited to, at least one of monomers, monomer backbone units, linkers, and functional groups) can be determined using various methods known in the art, including, but not limited to, the use of Parachor, as further described by non-limiting example in “Conception and Significance of the Parachor,” Nature 196:890-891. In some non-limiting examples, at least one functional group of the monomer may have a surface tension not exceeding one of about 25 dynes / cm, 21 dynes / cm, 20 dynes / cm, 19 dynes / cm, 18 dynes / cm, 17 dynes / cm, 16 dynes / cm, 15 dynes / cm, 14 dynes / cm, 13 dynes / cm, 12 dynes / cm, 11 dynes / cm, and 10 dynes / cm.

[0541] In some non-limiting examples, the monomer may include at least one of CF2 and CF2H moieties. In some non-limiting examples, the monomer may include at least one of CF2 and CF3 moieties. In some non-limiting examples, the monomer may include the CH2CF3 moiety. In some non-limiting examples, the monomer may include at least one of C and O. In some non-limiting examples, the monomer may include a fluorocarbon monomer. In some non-limiting examples, the monomer may include at least one of the following: vinyl fluoride moieties, vinylidene fluoride moieties, tetrafluoroethylene moieties, trifluorochloroethylene moieties, hexafluoropropylene moieties, and fluorinated 1,3-dioxane-pentene moieties.

[0542] In some non-limiting examples, the monomer may include a monomer backbone and functional groups. In some non-limiting examples, the functional groups may be bonded to the monomer backbone directly or via a linking group. In some non-limiting examples, the monomer may include a linking group, and the linking group may be bonded to both the monomer backbone and the functional groups. In some non-limiting examples, the monomer may include multiple functional groups, which may be the same as or different from each other. In such examples, each functional group may be bonded to the monomer backbone directly or via a linking group. In some non-limiting examples where multiple functional groups are present, multiple linking groups may also be present.

[0543] In some non-limiting examples, the molecular structure of at least one of the materials of the patterned coating 110 (which may be at least one of the first material and the second material) may include a variety of different monomers. In some non-limiting examples, such a molecular structure may include monomer species with at least one of different molecular compositions and molecular structures. In some non-limiting examples, such a molecular structure may include the molecular structures represented by formulas (II) and (III):

[0544] (Mon A ) k (Mon B ) m (II)

[0545] (Mon A ) k (Mon B ) m (Mon C ) o (III)

[0546] in:

[0547] Mon A Mon B And Mon C Each represents a single entity type, and

[0548] k, m, and o each represent an integer of at least 2.

[0549] In some non-limiting examples, k, m, and o are each represented as an integer among approximately 2-100, 2-50, 3-20, 3-15, 3-10, and 3-7. Those skilled in the art will understand that various non-limiting examples and descriptions concerning the monomer Mon are applicable to Mon. A Mon B and Mon C Each of them.

[0550] In some non-restrictive examples, the monomer can be represented by equation (IV):

[0551] M-(LR x ) y (IV)

[0552] in:

[0553] M represents a single main chain unit.

[0554] L represents a linking group.

[0555] R represents a functional group,

[0556] x is an integer between 1 and 4, and

[0557] y is an integer between 1 and 3.

[0558] In some non-limiting examples, the linking group can be represented by at least one of a single bond, O, N, NH, C, CH, CH2, and S.

[0559] Various non-limiting examples of functional groups described herein are applicable to R of formula (IV). In some non-limiting examples, functional group R may comprise an oligomer unit, and the oligomer unit may further comprise a plurality of functional group monomer units. In some non-limiting examples, the functional group monomer unit may be at least one of CH2 and CF2. In some non-limiting examples, the functional group may comprise a CH2CF3 moiety. For example, such functional group monomer units may be bonded together to form at least one of alkyl and fluoroalkyl oligomer units. In some non-limiting examples, the oligomer unit may further comprise a functional group terminal unit. In some non-limiting examples, the functional group terminal unit may be disposed at the end of the oligomer unit and bonded to the functional group monomer unit. In some non-limiting examples, the end where the functional group terminal unit may be disposed may correspond to a segment of the functional group that is remote from the monomer backbone unit. In some non-limiting examples, the functional group terminal unit may comprise at least one of CF2H and CF3.

[0560] In some non-limiting examples, the monomeric backbone unit M may have a high surface tension. In some non-limiting examples, the monomeric backbone unit may have a higher surface tension than at least one of the functional groups R to which it is bonded. In some non-limiting examples, the monomeric backbone unit may have a higher surface tension than any functional group R to which it is bonded.

[0561] In some non-limiting examples, the monomeric backbone units can have a surface tension that is one of at least about 25 dynes / cm, 30 dynes / cm, 40 dynes / cm, 50 dynes / cm, 75 dynes / cm, 100 dynes / cm, 150 dynes / cm, 200 dynes / cm, 250 dynes / cm, 500 dynes / cm, 1,000 dynes / cm, 1,500 dynes / cm, and 2,000 dynes / cm.

[0562] In some non-limiting examples, the monomer backbone units may include phosphorus (P) and N, including but not limited to phosphazenes, wherein a double bond exists between P and N and may be represented as at least one of "NP" and "N=P". In some non-limiting examples, the monomer backbone units may include Si and O, including but not limited to silsesquioxanes, which may be represented as SiO 3 / 2 .

[0563] In some non-limiting examples, at least a portion of the molecular structure of at least one of the materials of patterned coating 110 (including but not limited to at least one of the first material and the second material) is represented by Formula (V):

[0564] (NP-(LR x ) y ) n (V)

[0565] in:

[0566] NP represents the main chain unit of phosphazene monomer.

[0567] L represents a linking group.

[0568] R represents a functional group.

[0569] x is an integer between 1 and 4

[0570] y is an integer between 1 and 3, and

[0571] n is an integer of at least 2.

[0572] In some non-limiting examples, the molecular structure of at least one of the first material and the second material can be represented by Formula (V). In some non-limiting examples, at least one of the first material and the second material can be cyclophosphazene. In some non-limiting examples, the molecular structure of cyclophosphazene can be represented by Formula (V).

[0573] In some non-limiting examples, L may represent oxygen (O), x may be 1, and R may represent a fluoroalkyl group. In some non-limiting examples, at least one segment of the molecular structure of at least one material of the patterned coating 110 (including but not limited to at least one of the first and second materials) may be represented by formula (VI):

[0574] (NP(OR f )2) n (VI)

[0575] in:

[0576] R f It represents a fluoroalkyl group, and

[0577] n is an integer between 3 and 7.

[0578] In some non-limiting examples, the fluoroalkyl group may include at least one of a CF2 group, a CF2H group, a CH2CF3 group, and a CF3 group. In some non-limiting examples, the fluoroalkyl group may be represented by formula (VII):

[0579]

[0580] in:

[0581] p is an integer from 1 to 5;

[0582] q is an integer between 6 and 20; and

[0583] Z represents either H or F.

[0584] In some unrestricted examples, p can be 1, and q can be an integer between 6 and 20.

[0585] In some non-limiting examples, the fluoroalkyl group R in formula (VI) f It can be represented by formula (VII).

[0586] In some non-limiting examples, at least one segment of the molecular structure of at least one material of the patterned coating 110 (including, but not limited to, at least one of the first and second materials) can be represented by formula (VIII):

[0587] (SiO 3 / 2 -(LR)) n (VIII)

[0588] in:

[0589] L represents a linking group.

[0590] R represents a functional group, and

[0591] n is an integer between 6 and 12.

[0592] In some non-limiting examples, L may represent the presence of at least one of a single bond, O, a substituted alkyl group, and an unsubstituted alkyl group. In some non-limiting examples, n may be one of 8, 10, and 12. In some non-limiting examples, R may include a functional group with low surface tension. In some non-limiting examples, R may include at least one of a F-containing group and a Si-containing group. In some non-limiting examples, R may include at least one of a fluorocarbon group and a siloxane-containing group. In some non-limiting examples, R may include at least one of a CF2 group and a CF2H group. In some non-limiting examples, R may include at least one of a CF2 and CF3 group. In some non-limiting examples, R may include a CH2CF3 group. In some non-limiting examples, the material represented by formula (VIII) may be a polyoctahedral silsesquioxane.

[0593] In some non-limiting examples, at least one segment of the molecular structure of at least one material (including but not limited to at least one of the first and second materials) of the patterned coating 110 can be represented by formula (IX):

[0594] (SiO 3 / 2 -Rf) n (IX)

[0595] in:

[0596] n is an integer from 6 to 12, and

[0597] R f It indicates a fluoroalkyl group.

[0598] In some unrestricted examples, n can be one of 8, 10, and 12. In some unrestricted examples, R... f In some non-limiting examples, R f Can include at least one of a CF2 portion and a CF2H portion. In some non-limiting examples, R f May include at least one of CF2 and CF3 portions. In some non-limiting examples, R f A CH2CF3 moiety may be included. In some non-limiting examples, the material represented by formula (IX) may be a polyoctahedral silsesquioxane.

[0599] In some non-limiting examples, the fluoroalkyl group R in formula (IX) f It can be represented by formula (VII).

[0600] In some non-limiting examples, at least one segment of the molecular structure of at least one material (including but not limited to at least one of the first material and the second material) of the patterned coating 110 can be represented by Formula (X):

[0601] (SiO 3 / 2 -(CH2) x (CF3)) n (X)

[0602] in:

[0603] x is an integer between 1 and 5, and

[0604] n is an integer between 6 and 12.

[0605] In some unrestricted examples, n can be one of 8, 10, and 12.

[0606] In some non-limiting examples, the compound represented by formula (X) may be polyoctahedral silsesquioxane.

[0607] In some non-limiting examples, the functional group R and the fluoroalkyl group R f At least one of the above groups may be independently selected at each occurrence of such groups in any of the aforementioned formulas. One of ordinary skill in the relevant art will understand that any of the aforementioned formulas may represent a substructure of the compound, and that at least one of additional groups and additional moieties may be present that are not explicitly shown in the above formula. One of ordinary skill in the relevant art will understand that each formula provided herein may represent at least one of a linear, branched, cyclic, cyclic-linear, and cross-linked structure.

[0608] In some non-limiting examples, the patterned coating 110 may include at least one material represented by at least one of formulas (I), (II), (III), (IV), (V), (VI), (VIII), (IX), and (X), and at least one material exhibiting at least one of the following properties: including an aromatic hydrocarbon portion, including sp 2 C, including a phenyl moiety, has a characteristic surface energy of at least about 20 dynes / cm and exhibits photoluminescence, including but not limited to, photoluminescence at a wavelength of at least about 365 nm when irradiated with excitation radiation having a wavelength of about 365 nm.

[0609] In some non-limiting examples, the patterned coating may include a third material different from the first material and the second material. In some non-limiting examples, the third material may include a common monomer with at least one of the first material and the second material.

[0610] In some non-limiting examples, the difference in sublimation temperatures of the various materials in the patterned coating 110 (including, but not limited to, the difference between the first and second materials) may not exceed one of about 5°C, 10°C, 15°C, 20°C, 30°C, 40°C, and 50°C. In some non-limiting examples, at least one of the materials in the patterned coating 110 (including, but not limited to, at least one of the first and second materials) may include at least one of F and Si, and the sublimation temperatures of the materials in the patterned coating 110 may differ by no more than one of about 5°C, 10°C, 15°C, 20°C, 25°C, 40°C, and 50°C. In some non-limiting examples, at least one of the materials in the patterned coating 110 (including, but not limited to, at least one of the first and second materials) may include at least one of a fluorocarbon compound portion and a siloxane portion, and the sublimation temperatures of the materials in the patterned coating 110 may differ by no more than one of about 5°C, 10°C, 15°C, 20°C, 25°C, 40°C, and 50°C.

[0611] In some non-limiting examples, the difference in melting temperature of the various materials of the patterned coating 110 (including, but not limited to, the difference between the first NIC material and the second NIC material) may not exceed one of about 5°C, 10°C, 15°C, 20°C, 30°C, 40°C, and 50°C. In some non-limiting examples, at least one of the materials of the patterned coating 110 (including, but not limited to, the first material and the second material) may include at least one of F and Si, and the melting temperatures of the materials of the patterned coating 110 may differ by no more than one of about 5°C, 10°C, 15°C, 20°C, 25°C, 40°C, and 50°C. In some non-limiting examples, at least one of the materials of the patterned coating 110 (including, but not limited to, the first material and the second material) may include at least one of a fluorocarbon compound portion and a siloxane portion, and the melting temperatures of the materials of the patterned coating 110 may differ by no more than one of about 5°C, 10°C, 15°C, 20°C, 25°C, 40°C, and 50°C.

[0612] In some non-limiting examples, at least one of the materials of the patterned coating 110 (including but not limited to at least one of the first and second materials) may have a low characteristic surface energy. In some non-limiting examples, at least one of the materials of the patterned coating 110 (including but not limited to the first and second materials) may have a low characteristic surface energy, and at least one of the materials of the patterned coating 110 may include at least one of F and Si. In some non-limiting examples, at least one of the materials of the patterned coating 110 (including but not limited to at least one of the first and second materials) may have a low characteristic surface energy, may include at least one of F and Si, and at least one other material of the patterned coating 110 may have a high characteristic surface energy. In some non-limiting examples, the presence of F and Si may be attributed to the presence of a fluorocarbon moiety and a siloxane moiety, respectively. In some non-limiting examples, at least one of the materials (including but not limited to the second material) may have a low characteristic surface energy of one of approximately 10 dynes / cm-20 dynes / cm, 12 dynes / cm-20 dynes / cm, 15 dynes / cm-20 dynes / cm, and 17 dynes / cm-19 dynes / cm, and another material (including but not limited to the first material) may have a high characteristic surface energy of one of approximately 20 dynes / cm-100 dynes / cm, 20 dynes / cm-50 dynes / cm, and 25 dynes / cm-45 dynes / cm. In some non-limiting examples, at least one of the materials may include at least one of F and Si. In some non-limiting examples, the second material may include at least one of F and Si.

[0613] In some non-limiting examples, at least one of the materials of the patterned coating 110 (including, but not limited to, the second material) may have a low characteristic surface energy of no more than about 20 dynes / cm and may include at least one of F and Si, and another material (including, but not limited to, the first material) may have a characteristic surface energy of at least about 20 dynes / cm.

[0614] In some non-limiting examples, at least one of the materials of the patterned coating 110 (including, but not limited to, the second material) may have a low characteristic surface energy of no more than about 20 dynes / cm and may include at least one of a fluorocarbon compound portion and a siloxane portion, and another material of the patterned coating 110 (including, but not limited to, the first material) may have a characteristic surface energy of at least about 20 dynes / cm.

[0615] In some non-limiting examples, the surface energy of each of at least two materials of the patterned coating 110 (including, but not limited to, the surface energies of the first material and the second material) is not more than one of about 25 dynes / cm, 21 dynes / cm, 20 dynes / cm, 19 dynes / cm, 18 dynes / cm, 17 dynes / cm, 16 dynes / cm, 15 dynes / cm, 14 dynes / cm, 13 dynes / cm, 12 dynes / cm, 11 dynes / cm and 10 dynes / cm.

[0616] In some non-limiting examples, at least one of the materials of the patterned coating 110 (including, but not limited to, the first material and the second material) may have a refractive index at at least one of a wavelength of 500 nm and 460 nm that is not more than one of about 1.5, 1.45, 1.44, 1.43, 1.42 and 1.41. In some non-limiting examples, the patterned coating 110 may include at least one material exhibiting photoluminescence, and the patterned coating 110 may have a refractive index at at least one of a wavelength of 500 nm and 460 nm that is not more than one of about 1.5, 1.45, 1.44, 1.43, 1.42 and 1.41.

[0617] In some non-limiting examples, the molecular weight of at least one of the materials of the patterned coating 110 (including, but not limited to, at least one of the first material and the second material) may be at least about 750 g / mol, 1,000 g / mol, 1,500 g / mol, 2,000 g / mol, 2,500 g / mol and 3,000 g / mol.

[0618] In some non-limiting examples, the molecular weight of at least one of the materials of the patterned coating 110 (including, but not limited to, at least one of the first material and the second material) may be no more than one of about 10,000 g / mol, 7,500 g / mol and 5,000 g / mol.

[0619] In some non-limiting examples, the patterned coating 110 may include a variety of materials exhibiting similar thermal properties, wherein at least one of these materials may exhibit photoluminescence. In some non-limiting examples, the patterned coating 110 may include a variety of materials having similar thermal properties, wherein at least one of these materials may exhibit photoluminescence, and wherein at least one of these materials may include at least one of F and Si. In some non-limiting examples, the patterned coating 110 may include a variety of materials having similar thermal properties, including but not limited to at least one of a melting temperature and a sublimation temperature of the materials, wherein at least one of these materials may exhibit photoluminescence at a wavelength of at least about 365 nm when excited by radiation having an excitation wavelength of about 365 nm, and wherein at least one of these materials may include at least one of F and Si.

[0620] In some non-limiting examples, the patterned coating 110 may comprise a variety of materials having at least one of at least one common element and at least one common substructure, wherein at least one of these materials may exhibit photoluminescence. In some non-limiting examples, at least one of these materials may include F and Si. In some non-limiting examples, the patterned coating 110 may comprise a variety of materials having similar thermal properties, wherein when excited by radiation having an excitation wavelength of about 365 nm, at least one of these materials may exhibit photoluminescence at a wavelength of at least about 365 nm, and wherein at least one of these materials may include at least one of F and Si. In some non-limiting examples, the at least one common element may include at least one of F and Si. In some non-limiting examples, the at least one common substructure may include at least one of fluorocarbons, fluoroalkyl groups, and siloxy groups.

[0621] In some non-limiting examples, a method for manufacturing an optoelectronic device 100 may include the following actions: depositing a patterned coating on a first exposed layer surface 11 of the device in a laterally oriented first portion 101 of the device 100; and depositing a deposition material 531 on a second exposed layer surface 11 of the device in a laterally oriented second portion 102 of the device 100. The initial adhesion probability of the deposition material 531 on the exposed layer surface 11 of the patterned coating 110 in the first portion 101 may be substantially less than the initial adhesion probability of the deposition material 531 on the exposed layer surface 11 of the second portion 102, such that the exposed layer surface 11 of the patterned coating 110 in the first portion 101 may be substantially free of a sealing coating 140 of the deposition material 531. The patterned coating 110 deposited on the first exposed layer surface 11 of the device 100 may include a first material and a second material.

[0622] In some non-limiting examples, depositing patterned coating 110 on first exposed layer surface 11 of device 100 may include providing a mixture comprising a plurality of materials and depositing the mixture onto first exposed layer surface 11 of device 100 to form patterned coating 110 thereon. In some non-limiting examples, the mixture may include a first material and a second material. In some non-limiting examples, both the first material and the second material may be deposited onto first exposed layer surface 11 to form patterned coating 110 thereon.

[0623] In some non-limiting examples, a mixture comprising multiple materials may be deposited onto the first exposed layer surface 11 of the device 100 by a PVD process (including but not limited to thermal evaporation). In some non-limiting examples, the patterned coating 110 may be formed by evaporating the mixture from a single evaporation source and depositing the mixture on the first exposed layer surface 11 of the device 100. In some non-limiting examples, as a non-limiting example, a mixture comprising a first material and a second material may be placed in a single evaporation source (crucible) to be heated under vacuum. Once the evaporation temperature of the material is reached, the resulting vapor flux may be directed to the first exposed layer surface 11 of the device 100 to deposit the patterned coating 110 thereon.

[0624] In some non-limiting examples, the patterned coating 110 can be deposited by co-evaporation of the first material and the second material. In some non-limiting examples, the first material can be evaporated from a first evaporation source, and the second material can be evaporated simultaneously from a second evaporation source, such that the mixture can be formed in the gas phase and co-deposited onto the surface 11 of the first exposed layer to provide the patterned coating 110 thereon.

[0625] To evaluate the properties of certain example patterned coatings 110 containing at least two materials, a series of samples were prepared by depositing an organic material layer of approximately 20 nm thickness, which can be used as an HTL material, in a vacuum, followed by depositing nucleation-modified coatings with different compositions summarized in Table 5 below on top of the organic material layer.

[0626] Table 5

[0627] Sample labeling Composition of nucleation-modified coatings Sample 1 Patterned materials (15nm) Sample 2 Patterned material: PL material 1 (0.5%, 15nm) Sample 3 Patterned material: PL material 2 (0.5%, 15nm) Sample 4 PL material 1 (10nm) Sample 5 PL material 2 (10nm) Sample 6 No nucleation modification coating provided

[0628] In this example, a patterned material is selected such that, for example, when deposited as a thin film, the patterned material exhibits a low initial adhesion probability to the deposition material 531 (including but not limited to at least one of Ag and Yb).

[0629] In this example, PL material 1 and PL material 2 are selected such that, as a non-limiting example, when deposited as a thin film, each of PL material 1 and PL material 2 can exhibit photoluminescence that can be detected by standard optical measurement techniques (including but not limited to fluorescence microscopy).

[0630] In Table 5, Sample 1 is a comparative sample in which a nucleation-modified coating is provided by depositing a patterned material. Sample 2 is an example sample in which a nucleation-modified coating is provided by co-depositing the patterned material and PL material 1 together to form a coating containing 0.5 vol% of PL material 1. Sample 3 is an example sample in which a nucleation-modified coating is provided by co-depositing the patterned material and PL material 2 to form a coating containing 0.5 vol% of PL material 2. Sample 4 is a comparative sample in which a nucleation-modified coating is provided by depositing PL material 1. Sample 5 is a comparative sample in which a nucleation-modified coating is provided by depositing PL material 2. Sample 6 is a comparative sample in which no nucleation-modified coating is provided on the organic material layer.

[0631] The photoluminescence (PL) response of each of samples 1, 2, 3, and 6 was measured. Samples 1 and 6 showed identical PL intensities, indicating that the patterned material did not exhibit photoluminescence in the detection wavelength range. For each of samples 2 and 3, photoluminescence was detected at wavelengths from approximately 500 nm to approximately 600 nm.

[0632] Then, each of samples 1 to 6 is subjected to an open-mask deposition first, followed by Ag. Specifically, the surface of the nucleation-modified coating formed from the above materials is subjected to an open-mask deposition first, followed by Ag. More specifically, each sample is subjected to a Yb vapor flux until a reference thickness of about 1 nm is reached, and then to an Ag vapor flux until a reference thickness of about 12 nm is reached. Once the samples are fabricated, light transmittance measurements are performed to determine the amount of at least one of Yb and Ag deposited on the exposed surface 11 of the nucleation-modified coating. Those skilled in the art will understand that samples with little or no metal present can be substantially transparent, while samples with metal deposited on them (particularly as a sealing coating 140) can generally exhibit substantially low transmittance. Therefore, the performance of the various example coatings as patterned coating 110 can be evaluated by measuring EM radiation transmittance, which is directly related to the amount (thickness) of the metal deposited material deposited thereon by the deposition of either Yb or Ag.

[0633] The decrease in optical transmittance as a function of wavelength was measured for each of samples 1, 2, 3, 4, 5, and 6. Additionally, the decrease in optical transmittance at 600 nm for each sample after exposure to an Ag vapor flux was measured and summarized in Table 6 below.

[0634] Table 6

[0635] Sample labeling Transmittance decreases at λ = 600 nm (%) Sample 1 <1％ Sample 2 <2％ Sample 3 <1％ Sample 4 43％ Sample 5 47％ Sample 6 45％

[0636] Specifically, the transmittance reduction (%) for each sample in Table 6 was determined by measuring the light transmittance through the samples before and after exposure to Yb and Ag vapor fluxes and expressing the reduction in EM radiation transmittance as a percentage.

[0637] As can be seen, Samples 1, 2, and 3 exhibited a substantially low transmittance reduction of no more than 2%, and in the case of Samples 1 and 3, no more than 1%. Thus, it can be observed that the nucleation-modified coatings provided for these samples acted as NICs. In contrast, Samples 4, 5, and 6 each exhibited transmittance reductions of 43%, 47%, and 45%, respectively. Thus, the nucleation-modified coatings provided for these samples did not act as NICs, but did act as NPCs 720.

[0638] Furthermore, it was found that sample 1, in which the patterned coating 110 essentially only comprises NIC material, did not exhibit photoluminescence. However, samples 2 and 3, in which the patterned coating 110 comprises PL material 1 and PL material 2 respectively in addition to NIC material, exhibited photoluminescence and also acted as NIC by providing a surface with a low initial adhesion probability for the deposition of the deposited material 531.

[0639] optoelectronic devices

[0640] Figure 2 This is a simplified block diagram of the longitudinal orientation of an example optoelectronic device 200 according to the present disclosure. In some non-limiting examples, the example optoelectronic device may be an electroluminescent device 200. In some non-limiting examples, the device 200 may be an OLED.

[0641] Device 200 may include a substrate 10 on which a front panel 201 comprising multiple layers, the multiple layers being a first electrode 220, at least one semiconducting layer 230, and a second electrode 240. In some non-limiting examples, the front panel 201 may provide a mechanism for at least one of: emitting EM radiation (including but not limited to photons) and manipulating the emitted EM radiation.

[0642] In some non-limiting examples, various coatings on such devices 200 can be formed by vacuum-based deposition processes.

[0643] In some non-limiting examples, the second electrode 240 may extend partially over the patterned coating 110 in the transition region 245.

[0644] In some non-limiting examples, although not shown, the deposited layer 130 may be composed of at least one granular structure 150 of a discontinuous layer 160 of a material (deposited material 531) of which it is composed. d A patterned coating 110 that can act as a particle structure in the transition region 245 p The patterned coating 110 extends partially above it. In some non-limiting examples, such a discontinuous layer 160 may form at least a portion of the second electrode 240.

[0645] In some non-limiting examples, device 200 may be electrically coupled to power supply 204. When coupled in this way, device 200 may emit EM radiation (including, but not limited to, photons) as described herein.

[0646] substrate

[0647] In some non-limiting examples, substrate 10 may include a bottom substrate 215. In some non-limiting examples, the bottom substrate 215 may be formed of a material suitable for its use, including, but not limited to, at least one of: inorganic materials, including, but not limited to, at least one of: Si, glass, metals (including, but not limited to, metal foil), sapphire, and other inorganic materials; and organic materials, including, but not limited to, polymers, including, but not limited to, at least one of: polyimide and Si-based polymers. In some non-limiting examples, the bottom substrate 215 may be one of: rigid or flexible. In some non-limiting examples, substrate 10 may be defined by at least one flat surface. In some non-limiting examples, substrate 10 may have at least one exposed layer surface 11 of the remaining front panel 201 components of the support device 200, including, but not limited to, at least one of a first electrode 220, at least one semiconductive layer 230, and a second electrode 240.

[0648] In some non-limiting examples, such a surface may be at least one of an organic surface and an inorganic surface.

[0649] In some non-limiting examples, in addition to the bottom substrate 215, the substrate 10 may also include at least one of the following supported on the exposed layer surface 11 of the bottom substrate 215: at least one of organic and inorganic layers (not shown and not specifically described herein).

[0650] In some non-limiting examples, such an additional layer may include at least one organic layer, which may be at least one of the following: including, replacing and supplementing at least one of the semiconductive layers 230.

[0651] In some non-limiting examples, such an additional layer may include at least one inorganic layer, which may include at least one electrode, which in some non-limiting examples may be at least one of the following: including, replacing and supplementing at least one of the first electrode 220 and the second electrode 240.

[0652] Backplane and the TFT structure contained therein

[0653] In some non-limiting examples, such an additional layer may include a backplane 202. In some non-limiting examples, the backplane 202 may include at least one of the following: power supply circuitry and switching elements for driving the device 200, including but not limited to at least one of the following: at least one electronic TFT structure 206 and at least one component thereof which may be formed by a photolithography process.

[0654] In some non-limiting examples, the backplane 202 of substrate 10 may include at least one electronic device, including but not limited to optoelectronic components, including but not limited to one of transistors, resistors, and capacitors, such as those components that can support device 200 as one of active matrix and passive matrix devices 200. In some non-limiting examples, such a structure may be a thin-film transistor (TFT) structure 206.

[0655] In some non-limiting examples, the TFT structure 206 may include one of the following: a top gate, a bottom gate, an n-type TFT structure, and a p-type TFT structure 206. In some non-limiting examples, the TFT structure 206 may incorporate one of the following: amorphous Si (a-Si), indium gallium zinc oxide (IGZO), and low-temperature polycrystalline Si (LTPS).

[0656] First electrode

[0657] The first electrode 220 may be deposited above the substrate 10. In some non-limiting examples, the first electrode 220 may be electrically coupled to at least one of a terminal of the power supply 204 and ground. In some non-limiting examples, the first electrode 220 may be coupled by at least one driving circuit, which in some non-limiting examples may incorporate at least one TFT structure 206 in the backplane 202 of the substrate 10.

[0658] In some non-limiting examples, the first electrode 220 may include one of an anode and a cathode. In some non-limiting examples, the first electrode 220 may be an anode.

[0659] In some non-limiting examples, the first electrode 220 can be formed by depositing at least one thin conductive film over (a portion of) the substrate 10. In some non-limiting examples, there can be a plurality of first electrodes 220 disposed in a spaced arrangement laterally above the substrate 10. In some non-limiting examples, at least one of these at least one first electrode 220 can be deposited over (a portion of) the TFT insulating layer 207 disposed in a spaced arrangement laterally. If so, in some non-limiting examples, at least one of these at least one first electrode 220 can extend through an opening in the corresponding TFT insulating layer 207 to electrically couple with an electrode of the TFT structure 206 in the backplate 202.

[0660] In some non-limiting examples, at least one of the at least one first electrode 220 and at least one thin film thereof may include various materials, including but not limited to at least one metal material, including but not limited to at least one of magnesium (Mg), aluminum (Al), calcium (Ca), zinc (Zn), silver (Ag), cadmium (Cd), barium (Ba) and ytterbium (Yb), including but not limited to alloys containing any of such materials, at least one metal oxide, including but not limited to TCO, including but not limited to ternary compositions such as but not limited to at least one of FTO, IZO and ITO, in different proportions, including but not limited to a combination of any multiple thereof in at least one layer, wherein any at least one layer may be but not limited to a thin film.

[0661] Second electrode

[0662] The second electrode 240 may be deposited over at least one semiconductive layer 230. In some non-limiting examples, the second electrode 240 may be electrically coupled to at least one of a power supply terminal and ground. In some non-limiting examples, the second electrode 240 may be coupled by at least one driving circuit, which in some non-limiting examples may incorporate at least one TFT structure 206 in the backplane 202 of the substrate 10.

[0663] In some non-limiting examples, the second electrode 240 may include one of an anode and a cathode. In some non-limiting examples, the second electrode 240 may be a cathode.

[0664] In some non-limiting examples, the second electrode 240 can be formed by depositing a deposition layer 130 (as at least one thin film in some non-limiting examples) over at least a portion of a semiconductive layer 230.

[0665] In some non-limiting examples, by exposing the exposed surface 11 of device 200 (which in some non-limiting examples may include at least one semiconductive layer 230) to the vapor flux 412 of patterned material 411, a deposition layer 130 may be deposited in a second portion 102, including but not limited to using a shadow mask 415 to form a patterned coating 110 in a first portion 101. In some non-limiting examples, such as Figure 2 As shown, regardless of whether a shadow mask 415 is used, the patterned material 110 may be substantially limited in its lateral orientation to the emitting region 210 to the non-emitting region 211, including but not limited to at least one signal transmission region 212 located therein.

[0666] In some non-limiting examples, there may be a plurality of second electrodes 240 arranged in a certain space on the side facing upwards of at least one semiconductive layer 230.

[0667] In some non-limiting examples, the at least one second electrode 240 may include various materials, including but not limited to: at least one metal material, including but not limited to at least one of Mg, Al, Ca, Zn, Ag, Cd, Ba, and Yb, including but not limited to alloys containing at least one of any of these materials; at least one metal oxide, including but not limited to TCO, including but not limited to ternary compositions such as but not limited to at least one of FTO, IZO, and ITO, including but not limited to zinc oxide (ZnO) and other oxides including at least one of indium (In) and Zn in at least one layer in varying proportions; and at least one non-metallic material, any at least one of which may be, but not limited to, a thin conductive film. In some non-limiting examples, for a Mg:Ag alloy, the alloy composition may be in the range of approximately 1:9 to 9:1 by volume.

[0668] In some non-limiting examples, the deposition of the second electrode 240 may be performed using either an open-mask or maskless deposition process.

[0669] In some non-limiting examples, the second electrode 240 may comprise multiple such coatings. In some non-limiting examples, such coatings may be different coatings disposed on top of each other.

[0670] In some non-limiting examples, the second electrode 240 may comprise a Yb / Ag bilayer coating. In some non-limiting examples, this bilayer coating may be formed by depositing a Yb coating followed by an Ag coating. In some non-limiting examples, the thickness of this Ag coating may exceed the thickness of the Yb coating.

[0671] In some non-limiting examples, the second electrode 240 may be a multilayer electrode 240, which includes one of the following: a metal coating and an oxide coating.

[0672] In some non-limiting examples, the second electrode 240 may comprise fullerene and Mg.

[0673] In some non-limiting examples, such a coating can be formed by depositing a fullerene coating followed by a Mg coating. In some non-limiting examples, the fullerenes can be dispersed within the Mg coating to form a fullerene-containing Mg alloy coating. Non-limiting examples of such coatings are described in at least one of U.S. Patent Application Publication No. 2015 / 0287846, published on October 8, 2015, and PCT International Application No. PCT / IB2017 / 054970, filed on August 15, 2017, and published on February 22, 2018 as WO 2018 / 033860.

[0674] Semiconducting layer

[0675] In some non-limiting examples, at least one semiconducting layer 230 may include multiple layers 231, 233, 235, 237, 239. In some non-limiting examples, any one of these layers may be in the form of a thin film and arranged in a stacked configuration, which may include, but is not limited to, at least one of hole injection layer (HIL) 231, hole transport layer (HTL) 233, emitter layer (EML) 235, electron transport layer (ETL) 237, and electron injection layer (EIL) 239.

[0676] In some non-limiting examples, at least one semiconducting layer 230 may form a “series” structure comprising a plurality of EMLs 235. In some non-limiting examples, such a series structure may also include at least one charge generating layer (CGL).

[0677] Those skilled in the art will readily understand that the structure of device 200 can be altered by omitting or combining at least one of semiconductor layers 231, 233, 235, 237, and 239.

[0678] In some non-limiting examples, any of the layers 231, 233, 235, 237, 239 of the at least one semiconducting layer 230 may include any number of sublayers. In some non-limiting examples, any of such layers 231, 233, 235, 237, 239 (including but not limited to their sublayers) may include any of the following: a mixture and a composition gradient. In some non-limiting examples, although not shown, the device 200 may include at least one layer including one of an inorganic material and an organometallic material, and may not necessarily be limited to a device 200 composed solely of organic materials. As a non-limiting example, the device 200 may include at least one quantum dot (QD).

[0679] In some non-limiting examples, HIL 231 may be formed using a hole injection material that facilitates hole injection at the anode.

[0680] In some non-limiting examples, the HTL 233 may be formed using a hole transport material, which, in some non-limiting examples, may exhibit high hole mobility.

[0681] In some non-limiting examples, the ETL 237 may be formed using an electron transport material, which in some non-limiting examples may exhibit high electron mobility.

[0682] In some non-limiting examples, the EIL 239 can be formed using an electron injection material, which, in some non-limiting examples, can facilitate electron injection by the cathode.

[0683] In some non-limiting examples, as an example, at least one EML 235 can be formed by doping the host material with at least one emitter material. In some non-limiting examples, the emitter material can be at least one of a fluorescent emitter material, a phosphorescent emitter material, and a thermally activated delayed fluorescence (TADF) emitter material.

[0684] In some non-limiting examples, the emitter material may be one of an R (red) emitter material, a G (green) emitter material, and a B (blue) emitter material, that is, an emitter material that promotes the emission of R (red), G (green), and B (blue) EM radiation, respectively.

[0685] In some non-limiting examples, device 200 may be an OLED, wherein at least one semiconducting layer 230 may include at least one EML 235 interposed between conductive thin film electrodes 220, 240, whereby, when a potential difference is applied between them, holes may be injected into at least one semiconducting layer 230 via the anode and electrons may be injected into at least one semiconducting layer 230 via the cathode to migrate toward at least one EML 235 and combine to emit EM radiation in the form of photons.

[0686] In some non-limiting examples, device 200 may be an electroluminescent QD device 200, wherein at least one semiconducting layer 230 may include an active layer having at least one QD. When current is supplied to the first electrode 220 and the second electrode 240 by a power source, EM radiation (including, but not limited to, in the form of photons) may be emitted from the active layer comprising at least one semiconducting layer 230 between them.

[0687] In some non-limiting examples, including cases where device 200 includes an illumination panel, the entire lateral orientation of device 200 may correspond to a single emitting element. Thus, Figure 2 The substantially planar cross-sectional profile shown may extend substantially along the entire lateral orientation of device 200, such that EM radiation is emitted from the device substantially along the entire lateral extent of device 200. In some non-limiting examples, such a single emitting element may be driven by a single drive circuit of device 200.

[0688] In some non-limiting examples, including where the device 200 includes a display module, the lateral orientation of the device 200 may be subdivided into a plurality of emission regions 210 of the device 200, wherein in each emission region 210, the longitudinal orientation of its structure allows it to emit EM radiation when energized.

[0689] Those skilled in the art will readily understand that the structure of the device 200 can be altered by introducing at least one additional layer (not shown) at a suitable location within the stack of at least one semiconducting layer 230, the additional layer including, but not limited to, at least one of: a hole blocking layer (HBL) (not shown), an electron blocking layer (EBL) (not shown), a charge transport layer (CTL) (not shown), and a charge injection layer (CIL) (not shown).

[0690] In some non-limiting examples, the patterned coating 110 may be formed simultaneously with at least one semiconductive layer 230. In some non-limiting examples, at least one material used to form the patterned coating 110 may also be used to form at least one semiconductive layer 230. In some non-limiting examples, the EIL 237 of at least one semiconductive layer 230 may be a patterned coating 110 that may be deposited in a first portion 101 and a second portion 102 during the deposition of at least one semiconductive layer 230. EIL 239 may then be selectively deposited in the emission region 210 of the second portion 102 above the EIL 237, such that the exposed surface 11 of the EIL 237 in the first portion 101 may be substantially free of EIL 239. The exposed surface 11 of EIL 239 in emitter region 210 and the exposed surface of EIL 237, which serves as patterned coating 110, can then be exposed to the vapor flux 532 of deposited material 531 to form a sealing coating 140 of deposited layer 130 on EIL 239 in second portion 102 and a discontinuous layer 160 of deposited material 531 on EIL 237 in first portion 101. In some non-limiting examples, several stages for manufacturing device 200 can be reduced.

[0691] Launch area

[0692] In some non-limiting examples, including where the OLED device 200 may comprise a display module, the lateral orientation of the device 200 may be subdivided into a plurality of emitting regions 210 of the device 200, wherein within each of the emitting regions 210, the longitudinal orientation of the device 200 structure may be such that EM radiation is emitted therefrom when energized.

[0693] In some non-limiting examples, each emissive region 210 may have an associated pair of electrodes 220, 240 (one of which may serve as an anode and the other of which may serve as a cathode) and at least one semiconducting layer 230 therebetween. Such emissive regions 210 may emit EM radiation at a given wavelength spectrum and may correspond to pixels 1015 ( Figure 10 ) and one of its sub-pixels 216. In some non-limiting examples, a plurality of sub-pixels 216, each corresponding to a different wavelength (range) of EM radiation and emitting the EM radiation, may collectively form a pixel 1015.

[0694] In some non-limiting examples, the wavelength spectrum may correspond to, but is not limited to, colors in the visible spectrum. Due to the different wavelengths (ranges) involved, EM radiation of a first wavelength (range) emitted by a first sub-pixel 216 of a pixel 1015 may perform differently than EM radiation of a second wavelength (range) emitted by a second sub-pixel 216 of the pixel.

[0695] In some non-limiting examples, the active region 208 of each emission region 210 may be defined in the longitudinal direction by the first electrode 220 and the second electrode 240, and in the lateral direction by the presence of each of the first electrode 220, the second electrode 240 and at least one semiconducting layer 230 therebetween, i.e., the first electrode 220, the second electrode 240 and at least one semiconducting layer 230 therebetween laterally overlap.

[0696] Those skilled in the art will understand that the lateral orientation of the emission region 210, and therefore the lateral boundary of the active region 208, may not correspond to the entire lateral orientation of at least one of the first electrode 220 and the second electrode 240. Instead, the lateral orientation of the emission region 210 may substantially not exceed the lateral extent of the first electrode 220 and the second electrode 240. In some non-limiting examples, at least one of the following is true: some portions of the first electrode 220 may be covered by at least one pixel definition layer 209, and some portions of the second electrode 240 may not be disposed on at least one semiconductive layer 230, such that in at least one scenario, the emission region 210 may thereby be laterally constrained.

[0697] In some non-limiting examples, at least one of the various emission region layers can be deposited by deposition of the corresponding material constituting the emission region layer.

[0698] In some non-limiting examples, some of the semiconducting layers in at least one semiconducting layer 230 can be arranged in a desired pattern via vapor deposition of the corresponding emitter region layer material using a fine metal mask (FMM) having holes corresponding to the desired locations where emitter region layer material is to be deposited. In some non-limiting examples, multiple emitter region layers can be arranged in a similar pattern, including, but not limited to, by depositing their respective emitter region layer materials in their respective deposition stages using an FMM.

[0699] In some non-limiting examples, as discussed herein, the emission region layer material corresponding to at least one of the first electrode 220 and the second electrode 240 (including, but not limited to, the second electrode 240) can be deposited by pre-depositing a patterned coating 110 by patterning the material using FMM vapor deposition, the fine metal mask having holes corresponding to the desired locations where the patterned coating 110 is to be deposited, and then depositing the emission region layer material using either an open mask or a maskless deposition process.

[0700] In some non-limiting examples, the patterned coating 110 may be adapted to influence the tendency of the vapor flux 532 of the deposited material 531 (from which the emission region layer material may be composed) to be deposited on the surface of the exposed layer, including but not limited to the initial adhesion probability of the deposition of the deposited material 531, which does not exceed the initial adhesion probability of the deposition of the deposited material 531 on the surface of the exposed layer 11 of at least one semiconductive layer 230.

[0701] In some non-limiting examples, the first electrode 220 may be disposed on the exposed layer surface 11 of the device 200, and in some non-limiting examples, disposed within at least a portion of the lateral orientation of the emission region 210. In some non-limiting examples, at least within the lateral orientation of the emission region 210 of the (sub)pixels 1015 / 216, the exposed layer surface 11 may include a TFT insulating layer 207 constituting various TFT structures 206 for driving circuitry corresponding to the emission region 210 of a single display (sub)pixel 1015 / 216 during the deposition of the first electrode 220.

[0702] In some non-limiting examples, the TFT insulating layer 207 may be formed with openings extending therethrough to allow the first electrode 220 to be electrically coupled to TFT electrodes including, but not limited to, the TFT drain electrode.

[0703] A person skilled in the relevant art will appreciate that the driving circuit may include multiple TFT structures 206. Figure 2For the sake of simplicity, only one TFT structure 206 may be shown, but those skilled in the art will understand that such TFT structure 206 may represent at least one of the following: a plurality of such TFT structures constituting a driving circuit and at least one of its components.

[0704] In some non-limiting examples, the end of the first electrode 220 may be covered by at least one PDL 209, such that a portion of at least one PDL 209 may be inserted between the first electrode 220 and at least one semiconductive layer 230, such that such end of the first electrode 220 may be located outside the active region 208 of the associated emission region 210.

[0705] In some non-limiting examples, at least one semiconductive layer 230 (including, but not limited to, at least one of layers 231, 233, 235, 237, 239) may be deposited on the exposed layer surface 11 of the device 200, including at least a portion of the lateral orientation of such emission regions 210 of (sub)pixels 1015 / 216. In some non-limiting examples, at least within the lateral orientation of the emission regions 210 of (sub)pixels 1015 / 216, such exposed layer surface 11 may include a first electrode 220 when depositing such at least one semiconductive layer 230.

[0706] In some non-limiting examples, at least one semiconductive layer 230 may also extend beyond the lateral orientation of the emission region 210 of the (sub)pixel 1015 / 216 and at least partially within the lateral orientation of the surrounding non-emission region 211. In some non-limiting examples, such exposed layer surfaces 11 of such surrounding non-emission regions 211 may include PDL 209 when at least one semiconductive layer 230 is deposited.

[0707] In some non-limiting examples, the second electrode 240 may be disposed above the exposed layer surface 11 of the device 200, including at least a portion of the lateral orientation of the emission region 210 of the (sub)pixels 1015 / 216. In some non-limiting examples, at least within the lateral orientation of the emission region 210 of the (sub)pixels 1015 / 216, such exposed layer surface 11 may include at least one semiconductive layer 230 when the second electrode 220 is deposited.

[0708] In some non-limiting examples, the second electrode 240 may also extend beyond the lateral orientation of the emission region 210 of the (sub)pixels 1015 / 216 and at least partially within the lateral orientation of the surrounding non-emission region 211. In some non-limiting examples, the exposed layer surface 11 of such surrounding non-emission region 211 may include PDL 209 during the deposition of the second electrode 240.

[0709] In some non-limiting examples, the second electrode 240 may extend over most of the lateral orientation of the surrounding non-emission region 211, including but not limited to substantially all of it.

[0710] In some non-limiting examples, the respective emitting regions 210 of device 200 may be laterally patterned. In some non-limiting examples, the pattern may extend along a first lateral direction. In some non-limiting examples, the pattern may also extend along a second lateral direction, which in some non-limiting examples may extend at an angle relative to the first lateral direction. In some non-limiting examples, the second lateral direction may be substantially perpendicular to the first lateral direction. In some non-limiting examples, the pattern may have a plurality of elements arranged in such a pattern, each element being characterized by at least one of the following, including but not limited to: the wavelength of the EM radiation emitted by its emitting region 210, the shape of such emitting regions 210, their dimensions (along at least one of the first lateral direction and the second lateral direction), their orientation (relative to at least one of the first lateral direction and the second lateral direction), and their spacing from previous elements in the pattern (relative to at least one of the first lateral direction and the second lateral direction). In some non-limiting examples, the pattern may be repeated in at least one of the first lateral direction and the second lateral direction.

[0711] In some non-limiting examples, each individual emission region 210 of device 200 may be associated with and driven by a corresponding driving circuit within the backplane 202 of device 200, the corresponding driving circuit being used to drive the OLED structure for the associated emission region 210. In some non-limiting examples, including but not limited to, where the emission regions 210 may be arranged in a regular pattern extending in both a first (row) lateral direction and a second (column) lateral direction, signal lines corresponding to each row of emission regions 210 extending in the first lateral direction and signal lines corresponding to each column of emission regions 210 extending in the second lateral direction may exist in the backplane 202. In this non-limiting configuration, the signal on the row select line can activate the corresponding gate of the switch TFT structure 206 electrically coupled thereto, and the signal on the data line can activate the corresponding source of the switch TFT structure 206 electrically coupled thereto, such that the signal on the row select line / data line pair can be electrically coupled to and activate the anode of the OLED structure of the emission region 210 associated with such pair through the positive terminal of the power supply, thereby causing photons to be emitted from it, and its cathode is electrically coupled to the negative terminal of the power supply.

[0712] In some non-limiting examples, a single display pixel 1015 may include three sub-pixels 216, which in some non-limiting examples may correspond to a single sub-pixel 216 of each of three colors, including but not limited to at least one of the following: R (red) sub-pixel 216R G (green) subpixel 216 G And B (blue) subpixel 216 B In some non-limiting examples, a single display pixel 1015 may include four sub-pixels 216, each corresponding to a single sub-pixel 216 of each of two colors (including but not limited to an R (red) sub-pixel 216). R And B (blue) subpixel 216 B And the two sub-pixels 216 of the third color (including but not limited to G (green) sub-pixel 216) G In some non-limiting examples, a single display pixel 1015 may include four sub-pixels 216, which in some non-limiting examples may correspond to a single sub-pixel 216 for each of three colors, including but not limited to at least one of the following: R (red) sub-pixel 216 R G (green) subpixel 216 G And B (blue) subpixel 216 B And the fourth W (white) sub-pixel 216 W .

[0713] In some non-limiting examples, the emission spectrum of the EM radiation emitted by a given (sub-)pixel 1015 / 216 may correspond to a color that may represent the (sub-)pixel 1015 / 216. In some non-limiting examples, the wavelength of the EM radiation may not correspond to such a color, but further processing may be performed in a manner apparent to one of ordinary skill in the relevant art to convert the wavelength to such a corresponding wavelength.

[0714] In some non-limiting examples, the emission spectrum of the EM radiation emitted by a given (sub)pixel 1015 / 216 (corresponding to the color that can represent (sub)pixel 1015 / 216) may be associated with at least one of the following: the structure and composition of at least one semiconductive layer 230 (including but not limited to at least one EML 235) extending between its first electrode 220 and second electrode 240. In some non-limiting examples, at least one EML 235 of at least one semiconductive layer 230 may be adjusted to promote the emission of EM radiation having an emission spectrum corresponding to the color that can represent (sub)pixel 1015 / 216. In some non-limiting examples, R (red) subpixel 216 R EML 235 may include R (red) EML material, including but not limited to a host material doped with R (red) emitter material. In some non-limiting examples, G (green) subpixel 216 GEML 235 may include G (green) EML material, including but not limited to a host material doped with G (green) emitter material. In some non-limiting examples, B (blue) subpixel 216 B EML 235 may include B (blue) EML material, including but not limited to a host material doped with B (blue) emitter material.

[0715] In some non-limiting examples, at least one of the semiconductive layers 230 (including but not limited to HIL 231, HTL 233, EML 235, ETL 237 and EIL 239) may be selected to have at least one characteristic in the longitudinal orientation (including but not limited to its presence, absence, thickness, composition and order) to facilitate the emission of EM radiation from thereto, the EM radiation having a wavelength spectrum corresponding to a color that can represent a given sub-pixel 216, the color including but not limited to at least one of R (red), G (green) and B (blue).

[0716] In some non-limiting examples, according to the additive color model, the emission of EM radiation having wavelength spectra corresponding to a variety of colors selected from R (red), G (green), and B (blue) can promote the emission of EM radiation having wavelength spectra corresponding to different colors, including but not limited to W (white) (red + green + blue), Y (yellow) (red + green), C (cyan) (green + blue), and M (magenta) (blue + red).

[0717] In some non-limiting examples, the exposed layer surface 11 of device 100 may be exposed to the vapor flux 532 of the deposited material 531, including but not limited to one of the open mask and maskless deposition processes.

[0718] In some non-limiting examples, at least one semiconductive layer 230 may be deposited over the exposed layer surface 11 of the device 200 in at least a portion of the emission region 210, and in some non-limiting examples, the exposed layer surface includes a first electrode 220.

[0719] In some non-limiting examples, the exposed surface 11 of device 200 (which may include at least one semiconductive layer 230 in some non-limiting examples) may be exposed to the vapor flux 412 of patterned material 411, including but not limited to the use of a shadow mask 415 to form a patterned coating 110 in the first portion 101. Regardless of whether a shadow mask 415 is used, the patterned coating 110 may be substantially confined in its lateral orientation to the signal transmission region 212.

[0720] In some non-limiting examples, the lateral orientation of at least one emissive region 210 may extend across and include at least one TFT structure 206 associated therewith for driving the emissive region 210 along data and scan lines (not shown), which in some non-limiting examples may be formed from at least one of Cu and TCO.

[0721] In some non-limiting examples, the (sub) pixels 1015 / 216 can be arranged side by side. In some non-limiting examples, the (color) order of the sub pixels 216 of the first pixel 1015 can be the same as the (color) order of the sub pixels 216 of the second pixel 1015. In some non-limiting examples, the (color) order of the sub pixels 216 of the first pixel 1015 can be different from the (color) order of the sub pixels 216 of the second pixel 1015.

[0722] In some non-limiting examples, the sub-pixels 216 of adjacent pixels 1015 may be aligned in at least one of row arrangement, column arrangement and array arrangement.

[0723] In some non-limiting examples, the first at least one sub-pixel in the row and column of the aligned sub-pixel 216 of the adjacent pixel 1015 may include a sub-pixel 216 of the same and different colors.

[0724] In some non-limiting examples, the first at least one subpixel in the rows and columns of aligned subpixels 216 of the adjacent pixel 1015 may be aligned with at least one of the second at least one subpixel and the third at least one subpixel in the rows and columns of aligned subpixels 216 of the adjacent pixel 1015.

[0725] In some non-limiting examples, the first at least one sub-pixel in the rows and columns of aligned sub-pixels 216 of the adjacent pixel 1015 may be one of: offset or misaligned with at least one of the second at least one sub-pixel and the third at least one sub-pixel in the rows and columns of aligned sub-pixels 216 of the adjacent pixel 1015.

[0726] In some non-limiting examples, the sub-pixels 216 of the adjacent pixels 1015 of such first at least one sub-pixel, second at least one sub-pixel and third at least one sub-pixel in at least one row and column may be arranged such that the corresponding sub-pixels 216 of each of the first at least one sub-pixel, second at least one sub-pixel and third at least one sub-pixel in at least one row and column may have the same color.

[0727] In some non-limiting examples, the sub-pixels 216 of the adjacent pixels 1015 of at least one of the first, second, and third sub-pixels in a row and column may be arranged such that the corresponding sub-pixels 216 of each of the first, second, and third sub-pixels in a row and column may have different colors.

[0728] In some non-limiting examples, in at least one signal transmission region 212 of the display panel 300, at least one signal transmission region 212 may be disposed between a plurality of emission regions 210. In some non-limiting examples, at least one signal transmission region 212 may be disposed between adjacent (sub)pixels 1015 / 216. In some non-limiting examples, adjacent sub-pixels 216 surrounding at least one signal transmission region 212 may form part of the same pixel 1015. In some non-limiting examples, adjacent sub-pixels 216 surrounding at least one signal transmission region 212 may be associated with different pixels 1015.

[0729] In some non-limiting examples, regions of the closed coating 140 that may substantially lack a second electrode material (“cathode-free regions”), including but not limited to at least one signal transmission region 212, may exhibit photoelectronic properties different from other regions (including but not limited to at least one emission region 210). In some non-limiting examples, such cathode-free regions may, however, include some second electrode material, including but not limited to the form of at least one particulate structure 150 and a discontinuous layer 160 of at least one instance of such particulate structure 150.

[0730] In some non-limiting examples, this can be achieved by laser ablation of the second electrode material. However, in some non-limiting examples, laser ablation can produce a cloud of debris that can affect the vapor deposition process.

[0731] In some non-limiting examples, this can be achieved by using an FMM to set a patterned coating 110 (which in some non-limiting examples may be a nucleation inhibition coating (NIC)) in a certain pattern on the exposed surface 11 of at least one semiconductive layer 230, and then depositing a deposition material 531 for forming the second electrode 240 on the exposed surface.

[0732] In some non-limiting examples, the patterned coating 110 may be adapted to influence the tendency of the vapor flux 532 of the deposited material 531 to be deposited on the surface of the exposed layer, including but not limited to the initial adhesion probability of the deposited material 531, which does not exceed the initial adhesion probability of the deposited material 531 on the surface of the exposed layer 11 of at least one semiconductive layer 230.

[0733] In some non-limiting examples, the patterned coating 110 may be deposited in a pattern that may correspond to the lateral orientation of, including but not limited to, the first portion 101 of at least some of the signal-transmissive regions 212 .

[0734] In some non-limiting examples, the patterned coating 110 may be deposited in multiple stages, each stage using a different FMM that defines a different pattern within the first portion 101 , the multiple stages corresponding to different subsets of the signal-transmissive regions 212 .

[0735] In some non-limiting examples, after depositing the patterned coating 110 (all stages), the display panel 300 may be subjected to a vapor flux 532 of the deposited material 531 in one of an aperture mask and a maskless deposition process to form a second electrode 240 for each of the emission regions 210 corresponding to the (sub)pixels 1015 / 216 in at least the second portion 102 of the lateral orientation but not in the first portion 101 of the lateral orientation.

[0736] In some non-limiting examples, although not shown, the overlay 170 may be disposed on at least one of the second electrode 240 and the patterned coating 110. In some non-limiting examples, although not shown, the overlay 170 may be deposited at least partially across the lateral extent of the optoelectronic device 200, in some non-limiting examples covering the second electrode 240 in the second portion 102, and in some non-limiting examples at least partially covering at least one particulate structure 150 and forming an interface with the patterned coating 110 at its exposed layer surface 11 in the first portion 101.

[0737] Non-launch area

[0738] In some non-limiting examples, the various emitting regions 210 of the device 200 may be substantially surrounded and separated in at least one lateral direction by at least one non-emitting region 211, wherein at least one of the structure and configuration of the device 200 along the longitudinal orientation as shown (without limitation) may be varied to substantially inhibit emission of EM radiation therefrom.

[0739] In some non-limiting examples, non-emission region 211 may include those regions that are substantially without emission region 210 in a lateral orientation.

[0740] In some non-limiting examples, the longitudinal topology of the various layers of the at least one semiconducting layer 230 may be varied to define at least one emitting region 210 surrounded (at least in one lateral direction) by at least one non-emitting region 211 .

[0741] Now, a non-limiting example of a specific implementation of the longitudinal orientation of a device 200 applied to an emission region 210 corresponding to a single display (sub)pixel 1015 / 216 of display 200 will be described. Although features of this specific implementation are shown as specific to emission region 210, those skilled in the art will understand that in some non-limiting examples, more than one emission region 210 may cover common features.

[0742] In some non-limiting examples, the lateral orientation of the surrounding non-emission region 211 can be characterized by the presence of the corresponding PDL 209.

[0743] In some non-limiting examples, the thickness of the PDL 209 may increase from a minimum at the end covering the first electrode 220 to a maximum beyond the lateral extent of the first electrode 220. In some non-limiting examples, the thickness variation of at least one PDL 209 may define a valley shape centered on the emission region 210. In some non-limiting examples, the valley shape may constrain the field of view (FOV) of the EM radiation emitted by the emission region 210.

[0744] Although the PDL 209 is generally shown herein as having a linearly inclined surface to form a valley-shaped configuration defining an emission region 210 surrounded by it, a person of ordinary skill in the relevant art will understand that, in some non-limiting examples, at least one of the shape, aspect ratio, thickness, width, and configuration of such a PDL 209 may vary. In some non-limiting examples, the PDL 209 may be formed with one of a substantially steep portion and a more gently inclined portion. In some non-limiting examples, such a PDL 209 may be configured to extend substantially vertically away from the surface on which it is deposited, which surface may cover at least one edge of the first electrode 220. In some non-limiting examples, such a PDL 209 may be configured to deposit at least one semiconductive layer 230 thereon by a solution processing technique (including but not limited to by printing, including but not limited to inkjet printing).

[0745] In some non-limiting examples, PDL 209 may be deposited substantially over TFT insulating layer 207, although, as shown, in some non-limiting examples, PDL 209 may also extend over at least a portion (including but not limited to its outer edge) of the deposited first electrode 220.

[0746] In some non-limiting examples, the lateral extent of at least one of the non-emission regions 211 may be at least the lateral extent of the emission region 210 interposed between them, and in some non-limiting examples exceed that lateral extent, including but not limited to multiples thereof.

[0747] In some non-limiting examples, the thickness of at least one PDL 209 in at least one signal transmission region 212, (in some non-limiting examples) the thickness of at least one non-emission region 211 (which are placed between adjacent emission regions 210, at least in regions laterally spaced therefrom in some non-limiting examples) and (in some non-limiting examples; although not shown) the thickness of the TFT insulating layer 207 may be reduced in order to increase at least one of the transmittance and transmittance angle relative to and through the layer of the display panel 300 to facilitate the transmission of EM radiation through it.

[0748] sedimentary layer

[0749] In some non-limiting examples, where the patterned coating 110 is confined in its lateral extent to the first portion 101, in the second portion 102 of the device 100, a deposited layer 130 comprising deposited material 531 may be provided as a closed coating 140 on the exposed surface 11 of the underlying layer 710.

[0750] In some non-limiting examples, the deposition layer 130 may include deposition material 531.

[0751] In some non-limiting examples, the deposited material 531 may contain an element selected from at least one of the following elements: potassium (K), sodium (Na), lithium (Li), Ba, cesium (Cs), Yb, Ag, gold (Au), Cu, Al, Mg, Zn, Cd, tin (Sn), and yttrium (Y). In some non-limiting examples, the element may include at least one of K, Na, Li, Ba, Cs, Yb, Ag, Au, Cu, Al, and Mg. In some non-limiting examples, the element may include at least one of Cu, Ag, and Au. In some non-limiting examples, the element may be Cu. In some non-limiting examples, the element may be Al. In some non-limiting examples, the element may include at least one of Mg, Zn, Cd, and Yb. In some non-limiting examples, the element may include at least one of Mg, Ag, Al, Yb, and Li. In some non-limiting examples, the element may include at least one of Mg, Ag, and Yb. In some non-limiting examples, the element may include at least one of Mg and Ag. In some non-limiting examples, the element may be Ag.

[0752] In some non-limiting examples, the deposited material 531 may include a pure metal. In some non-limiting examples, the deposited material 531 may be (substantially) pure Ag. In some non-limiting examples, the substantially pure Ag may have a purity of at least about one of 95%, 99%, 99.9%, 99.99%, 99.999%, and 99.9995%. In some non-limiting examples, the deposited material 531 may be (substantially) pure Mg. In some non-limiting examples, the substantially pure Mg may have a purity of at least about one of 95%, 99%, 99.9%, 99.99%, 99.999%, and 99.9995%.

[0753] In some non-limiting examples, the deposited material 531 may include an alloy. In some non-limiting examples, the alloy may be one of an Ag-containing alloy, a Mg-containing alloy, and an AgMg-containing alloy. In some non-limiting examples, the AgMg-containing alloy may have an alloy composition ranging from about 1:10 (Ag:Mg) to about 10:1 by volume.

[0754] In some non-limiting examples, the deposited material 531 may include another metal in place of Ag or in combination with Ag. In some non-limiting examples, the deposited material 531 may include an alloy of Ag and at least one other metal. In some non-limiting examples, the deposited material 531 may include an alloy of Ag with at least one of Mg and Yb. In some non-limiting examples, this alloy may be a binary alloy having a composition between approximately 5% and 95% Ag by volume, with the remainder being the other metal. In some non-limiting examples, the deposited material 531 may include Ag and Mg. In some non-limiting examples, the deposited material 531 may include an Ag:Mg alloy having a volume ratio between approximately 1:10 and 10:1. In some non-limiting examples, the deposited material 531 may include Ag and Yb. In some non-limiting examples, the deposited material 531 may include a Yb:Ag alloy having a volume ratio between approximately 1:20 and 10:1. In some non-limiting examples, the deposited material 531 may include Mg and Yb. In some non-limiting examples, the deposition material 531 may include a Mg:Yb alloy. In some non-limiting examples, the deposition material 531 may include Ag, Mg, and Yb. In some non-limiting examples, the deposition layer 130 may include an Ag:Mg:Yb alloy.

[0755] In some non-limiting examples, the deposited layer 130 may include at least one additional element. In some non-limiting examples, this additional element may be a non-metallic element. In some non-limiting examples, the non-metallic element may be at least one of O, S, N, and C. Those skilled in the relevant art will appreciate that, in some non-limiting examples, the additional element may be incorporated into the deposited layer 130 as a contaminant due to the presence of such additional element in at least one of the source material, the equipment used for deposition, and the vacuum chamber environment. In some non-limiting examples, the concentration of such additional element may be limited to below a threshold concentration. In some non-limiting examples, such additional element may form a compound with other elements of the deposited layer 130. In some non-limiting examples, the concentration of the non-metallic element in the deposited material 531 may be no more than approximately one of 1%, 0.1%, 0.01%, 0.001%, 0.0001%, 0.000001%, 0.0000001%, and 0.00000001%. In some non-limiting examples, the deposited layer 130 may have a composition in which the combined amount of O and C may be no more than about one of 10%, 5%, 1%, 0.1%, 0.01%, 0.001%, 0.0001%, 0.00001%, 0.000001%, and 0.0000001%.

[0756] It has been discovered that reducing the concentration of certain non-metallic elements in the deposited layer 130, particularly where the deposited layer 130 may consist essentially of at least one of a metal and a metal alloy, may facilitate selective deposition of the deposited layer 130. Without wishing to be bound by any particular theory, it is hypothesized that certain non-metallic elements (such as, in some non-limiting examples, at least one of O and C), when present in the vapor flux 532 of at least one of the deposited layer 130 and the ambient in the deposition chamber, may be deposited on the surface of the patterned coating 110 to act as nucleation sites for the metallic elements of the deposited layer 130. It is hypothesized that reducing the concentration of such non-metallic elements that may act as nucleation sites may be beneficial in reducing the amount of deposited material 531 deposited on the exposed layer surface 11 of the patterned coating 110.

[0757] In some non-limiting examples, the deposited material 531 may be deposited on a metal-containing lower layer 710. In some non-limiting examples, the deposited material 531 and the lower layer 710 below it may include a common metal.

[0758] In some non-limiting examples, the deposition layer 130 may include multiple layers of deposition material 531. In some non-limiting examples, the deposition material 531 of the first layer of the plurality of layers may be different from the deposition material 531 of the second layer of the plurality of layers. In some non-limiting examples, the deposition layer 130 may include a multilayer coating. In some non-limiting examples, such a multilayer coating may be one of Yb / Ag, Yb / Mg, Yb / Mg:Ag, Yb / Yb:Ag, Yb / Ag / Mg, and Yb / Mg / Ag.

[0759] In some non-limiting examples, the deposited material 531 may include a metal with a bond dissociation energy not exceeding one of about 300 kJ / mol, 200 kJ / mol, 165 kJ / mol, 150 kJ / mol, 100 kJ / mol, 50 kJ / mol and 20 kJ / mol.

[0760] In some non-limiting examples, the deposited material 531 may include a metal with an electronegativity of no more than one of about 1.4, 1.3 and 1.2.

[0761] In some non-limiting examples, the sheet resistance of the deposited layer 130 may typically correspond to the sheet resistance of the deposited layer 130, which is measured in isolation from other components, layers, and portions of the device 100. In some non-limiting examples, the deposited layer 130 may be formed as a thin film. Therefore, in some non-limiting examples, the characteristic sheet resistance of the deposited layer 130 may be determined based on at least one of the composition, thickness, and morphology of such a thin film. In some non-limiting examples, the sheet resistance may be no more than at least one of about 10 Ω / □, 5 Ω / □, 1 Ω / □, 0.5 Ω / □, 0.2 Ω / □, and 0.1 Ω / □.

[0762] In some non-limiting examples, the deposited layer 130 may be patterned, the pattern being defined by at least one region of a closed coating 140 in which there is substantially no deposited layer 130. In some non-limiting examples, the at least one region may separate the deposited layer 130 into a plurality of discrete segments thereof. In some non-limiting examples, each discrete segment of the deposited layer 130 may be a different second portion 102. In some non-limiting examples, the plurality of discrete segments of the deposited layer 130 may be physically spaced apart from each other in their lateral orientation. In some non-limiting examples, at least two of such discrete segments of the deposited layer 130 may be electrically coupled. In some non-limiting examples, at least two of such discrete segments of the deposited layer 130 may each be electrically coupled to a common conductive coating (including, but not limited to, the underlying layer 710) to allow current to flow between them. In some non-limiting examples, at least two of such discrete segments of the deposited layer 130 may be electrically insulated from each other.

[0763] Selective deposition using patterned coatings

[0764] Figure 4 This is an example schematic diagram illustrating a non-limiting example of an evaporation deposition process in chamber 420, generally shown at 400, for selectively depositing a patterned coating 110 onto a first portion 101 of the exposed surface 11 of the underlying layer 710.

[0765] In process 400, a certain amount of patterned material 411 may be heated under vacuum to cause the patterned material 411 to evaporate (sublimate). In some non-limiting examples, the patterned material 411 may substantially (including but not limited to) comprise the material used to form the patterned coating 110. In some non-limiting examples, such material may comprise an organic material.

[0766] The evaporation flux 412 of the patterned material 411 can flow through the chamber 420 (including in the direction indicated by arrow 51) toward the exposed layer surface 11. When the evaporation flux 412 is incident on the exposed layer surface 11, a patterned coating 110 can be formed on the surface.

[0767] In some non-limiting examples, as shown in the diagram of process 400, by inserting a shadow mask 415 (which may be an FMM in some non-limiting examples) between vapor flux 412 and exposed layer surface 11 of underlying layer 710, patterned coating 110 may be selectively deposited only on a portion (in the illustrated example, first portion 101) of exposed layer surface 11 of underlying layer 710. In some non-limiting examples, such a shadow mask 415 may be used to form substantially small features, where the feature size is on the order of (or less than) tens of microns.

[0768] Shadow mask 415 may have at least one aperture 416 extending therethrough, such that a portion of evaporation flux 412 passes through aperture 416 and may be incident on exposed layer surface 11 to form patterned coating 110. In the event that evaporation flux 412 does not pass through aperture 416 but is incident on surface 417 of shadow mask 415, the evaporation flux is prevented from being disposed on exposed layer surface 11 to form patterned coating 110. In some non-limiting examples, shadow mask 415 may be configured such that evaporation flux 412 passing through aperture 416 may be incident on first portion 101 but not on second portion 102. Second portion 102 of exposed layer surface 11 may thus be substantially free of patterned coating 110. In some non-limiting examples (not shown), patterned material 411 incident on shadow mask 415 may be deposited on surface 417 thereof.

[0769] Therefore, a patterned surface can be produced when the patterned coating 110 is deposited.

[0770] Figure 5 is an example schematic diagram showing a non-limiting example of the results of an evaporation process in chamber 420, the evaporation process generally being 500 a As shown, a sealing coating 140 for selectively depositing the deposition layer 710 is deposited onto a second portion 102 of the exposed surface 11 of the underlying layer 130, which is substantially free of (including but not limited to) by means of (…). Figure 4 The patterned coating 110 is selectively deposited onto the first portion 101 by an evaporation process 400 .

[0771] In some non-limiting examples, the deposition layer 130 may be composed of a deposition material 531, which in some non-limiting examples includes at least one metal. Those skilled in the art will understand that in some non-limiting examples, the evaporation temperature of the organic material is lower than that of the metal (such as the metal that can be used as deposition material 531).

[0772] Therefore, in some non-limiting examples, there may be fewer constraints in selectively depositing a patterned coating 110 with a certain pattern using a shadow mask 415, compared to directly patterning the deposited layer 130 using such a shadow mask 415.

[0773] Once the patterned coating 110 has been deposited on the first portion 101 of the exposed surface 11 of the underlying layer 710, the sealing coating 140 of the deposited material 531 can be deposited as a deposition layer 130 on the second portion 102 of the exposed surface 11, which is essentially without the patterned coating 110.

[0774] In process 500 a In this process, a certain amount of the deposition material 531 can be heated under vacuum to sublimate the deposition material 531. In some non-limiting examples, the deposition material 531 may consist substantially (including but not limited to) entirely of the material used to form the deposition layer 130.

[0775] The evaporation flux 532 of the deposited material 531 can be directed inside the chamber 420 (including in the direction indicated by arrow 51) toward the exposed surface 11 of the first portion 101 and the second portion 102. When the evaporation flux 532 is incident on the second portion 102 of the exposed surface 11, a sealing coating 140 of the deposited material 531 can be formed thereon as a deposited layer 130.

[0776] In some non-limiting examples, the deposition of the deposition material 531 may be performed using one of an open mask and a maskless deposition process.

[0777] Those skilled in the relevant art will appreciate that, in contrast to the feature sizes of the shadow mask 415 , the feature sizes of the open mask may generally be comparable to the size of the device 100 being fabricated.

[0778] Those skilled in the art will understand that, in some non-limiting examples, the use of an aperture mask may be omitted. In some non-limiting examples, the aperture mask deposition process described herein may alternatively be performed without using an aperture mask, thereby exposing the entire target exposure layer surface 11.

[0779] In fact, such as Figure 5 As shown, the evaporation flux 532 can be incident on the exposed surface 11 of the patterned coating 110 in the first portion 101, and on the exposed surface 11 of the underlying layer 710 in the second portion 102, which is substantially without the patterned coating 110.

[0780] Because the exposed layer surface 11 of the patterned coating 110 in the first portion 101 may exhibit a substantially low initial adhesion probability against deposition of the deposition material 531 relative to the exposed layer surface 11 of the underlying layer 710 in the second portion 102, the deposition layer 130 may be selectively deposited substantially only on the exposed layer surface 11 of the underlying layer 710 in the second portion 102, which is substantially free of the patterned coating 110. In contrast, the evaporation flux 532 incident on the exposed layer surface 11 of the patterned coating 110 in the first portion 101 may tend not to deposit (as indicated by 533), and the exposed layer surface 11 of the patterned coating 110 in the first portion 101 may be substantially free of the sealing coating layer 140 of the deposition layer 130.

[0781] In some non-limiting examples, the initial deposition rate of evaporation flux 532 on the exposed surface 11 of the lower layer 710 in the second part 102 may exceed one of approximately 200 times, 550 times, 900 times, 1,000 times, 1,500 times, 1,900 times and 2,000 times the initial deposition rate of evaporation flux 532 on the exposed surface 11 of the patterned coating 110 in the first part 101.

[0782] therefore, Figure 4 The combination of selective deposition of patterned coating 110 using shadow mask 415 and at least one of open mask and maskless deposition of deposition material 531 may produce Figure 5 The device 100 shown is of type 500. a .

[0783] After selectively depositing the patterned coating 110 in the first portion 101, in some non-limiting examples, a sealing coating 140 of deposited material 531 may be deposited on the device 500 using one of an open mask and a maskless deposition process. a The sealing coating may be deposited as the deposition layer 130 , but the sealing coating may substantially remain only in the second portion 102 , which is substantially free of the patterned coating 110 .

[0784] The patterned coating 110 can provide an exposed layer surface 11 within the first portion 101 with a substantially low initial adhesion probability to the deposition of the deposited material 531, i.e., significantly smaller than that of the device 500. a The initial adhesion probability of the exposed surface 11 of the lower layer 710 within the second part 102 for the deposition of the deposited material 531.

[0785] Therefore, the first part 101 may be substantially without the sealing coating 140 of the deposited material 531.

[0786] While this disclosure envisions the use of an evaporation deposition process (involving a shadow mask 415) for the patterned deposition of the patterned coating 110, those skilled in the art will understand that, in some non-limiting examples, this can be achieved using any suitable deposition process (including, but not limited to, microcontact printing processes).

[0787] While this disclosure envisions the patterned coating 110 as a NIC, those skilled in the art will understand that, in some non-limiting examples, the patterned coating 110 may be an NPC 720. In such examples, portions of the NPC 720 that have been deposited (such as, but not limited to, the first portion 101) may, in some non-limiting examples, have a sealing coating 140 of deposited material 531, while other portions (such as, but not limited to, the second portion 102) may substantially lack a sealing coating 140 of deposited material 531.

[0788] In some non-limiting examples, the average layer thickness of the patterned coating 110 and the average layer thickness of the subsequently deposited layer 130 may vary according to a variety of parameters, including but not limited to a given application and given performance characteristics. In some non-limiting examples, the average layer thickness of the patterned coating 110 may be comparable to the average layer thickness of the subsequently deposited layer 130, including but not limited to substantially not exceeding the latter. Using a substantially thin patterned coating 110 to achieve selective patterning of the deposited layer 130 may be suitable for providing a flexible device 100.

[0789] In some non-limiting examples, device 200 may also include an NPC 720 disposed between patterned coating 110 and second electrode 240.

[0790] In some non-limiting examples, the patterned coating 110 may be formed simultaneously with at least one semiconductive layer 230. In some non-limiting examples, at least one material used to form the patterned coating 110 may also be used to form at least one semiconductive layer 230 to reduce the number of stages required to manufacture the device 200.

[0791] Edge Effect

[0792] Patterned coating transition area

[0793] Go to Figure 6A The diagram can show Figure 1 Device 100 of type 600 a It can be shown in magnified form as the interface between the patterned coating 110 in the first part 101 and the deposited layer 130 in the second part 102. Figure 6B Device 600 can be shown in a plan view. a .

[0794] As in Figure 6B As can be better seen in some non-limiting examples, the patterned coating 110 in the first portion 101 may be surrounded on all sides by the deposited layer 130 in the second portion 102, such that the first portion 101 may have a boundary defined by another edge 615 of the patterned coating 110 in a lateral orientation along each lateral axis. In some non-limiting examples, the laterally oriented patterned coating edge 615 may be defined by the periphery of the first portion 101 in this orientation.

[0795] In some non-limiting examples, the first portion 101 may include at least one patterned coating transition region 101 in the lateral orientation. t The thickness of the patterned coating 110 can transition from a maximum thickness to a decreasing thickness. The range of the first portion 101 that does not exhibit this transition can be defined as the non-transition portion 101 of the patterned coating of the first portion 101. n In some non-limiting examples, the patterned coating 110 may be present in the non-transition portion 101 of the patterned coating in the first portion 101. n A basically closed coating 140 is formed in the middle.

[0796] In some non-limiting examples, the patterned coating transition region 101 t The patterned coating non-transition portion 101 can be laterally oriented towards the first portion 101. n It extends between the patterned coating edge 615 and the edge of the coating.

[0797] In some non-limiting examples, in a planar view, the patterned coating transition region 101 t The patterned coating non-transition portion 101 can be applied along the first portion 101.n The surrounding area extends.

[0798] In some non-limiting examples, the patterned coating non-transition portion 101 is patterned along at least one lateral axis. n The first portion 101 may occupy the entire first portion 101 so that there is no patterned coating transition region 101 between the first portion 101 and the second portion 102. t .

[0799] like Figure 6A As shown, in some non-limiting examples, the patterned coating 110 is in the non-transition portion 101 of the patterned coating in the first portion 101. n The film may have an average film thickness d2, which can be within the range of approximately 1 nm-100 nm, 2 nm-50 nm, 3 nm-30 nm, 4 nm-20 nm, 5 nm-15 nm, 5 nm-10 nm, and 1 nm-10 nm. In some non-limiting examples, the patterned coating of the first portion 101 is a non-transition portion 101. n The average film thickness d2 of the patterned coating 110 can be substantially the same (constant) therebetween. In some non-limiting examples, in the non-transition portion 101 of the patterned coating... n The average film thickness d2 of the patterned coating 110 may be maintained within one of approximately 95% and 90% of the average film thickness d2 of the patterned coating 110 .

[0800] In some non-limiting examples, the average film thickness d2 can be between about 1 nm and 100 nm. In some non-limiting examples, the average film thickness d2 can be no more than one of about 80 nm, 60 nm, 50 nm, 40 nm, 30 nm, 20 nm, 15 nm, and 10 nm. In some non-limiting examples, the average film thickness d2 of the patterned coating 110 can be at least one of about 3 nm, 5 nm, and 8 nm.

[0801] In some non-limiting examples, the patterned coating of the first portion 101 is a non-transition portion 101. n The average film thickness d2 of the patterned coating 110 in the process may not exceed approximately 10 nm. Without being bound by any particular theory, it has been found that, at least in some non-limiting examples, the non-transition portion 101 of the patterned coating relative to the first portion 101... n The non-zero average film thickness d2 of the patterned coating 110 is at least about 10 nm. An average film thickness d2 of patterned coating 110 not exceeding about 10 nm can provide certain advantages for achieving enhanced patterned contrast of deposited layer 130 (in some non-limiting examples).

[0802] In some non-limiting examples, the patterned coating 110 may have a patterned coating transition region 101 t The thickness of the patterned coating decreases from a maximum value to a minimum value within the first portion 101. In some non-limiting examples, the maximum value may be close to the patterned coating transition region 101 of the first portion 101. t and patterned coating non-transition portion 101 n The boundary between them. In some non-limiting examples, the minimum value may be close to the edge 615 of the patterned coating. In some non-limiting examples, the maximum value may be the non-transition portion 101 of the patterned coating of the first portion 101. n In some non-limiting examples, the maximum value may be no greater than the average film thickness d2 of the patterned coating non-transition portion 101 of the first portion 101. n The minimum value is approximately 95% to 90% of the average film thickness d2. In some non-limiting examples, this minimum value may be in the range of approximately 0 nm to 0.1 nm.

[0803] In some non-limiting examples, the patterned coating transition region 101 t The profile of the patterned coating thickness can be slanted. In some non-limiting examples, this profile can be conical. In some non-limiting examples, the cone can follow one of linear, non-linear, parabolic, and exponentially decaying profiles.

[0804] In some non-limiting examples, the patterned coating 110 may be in the patterned coating transition region 101 t The middle layer completely covers the lower layer 710. In some non-limiting examples, in the patterned coating transition area 101 t In this process, at least a portion of the lower layer 710 may not be covered by the patterned coating 110. In some non-limiting examples, the patterned coating 110 may be present in the patterned coating transition region 101. t A minimum portion and a patterned coating non-transition portion 101 n At least one of at least a portion of the includes a substantially closed coating 140 therein.

[0805] In some non-limiting examples, the patterned coating 110 may be in the patterned coating transition region 101 t At least a portion of the patterned coating and the non-transition portion 101 n At least one of the at least portions includes a discontinuous layer 160.

[0806] In some non-limiting examples, at least a portion of the patterned coating 110 in the first portion 101 can be substantially free of the seal coating 140 of the deposited layer 130. In some non-limiting examples, at least a portion of the exposed layer surface 11 of the first portion 101 can be substantially free of the seal coating 140 of one of the deposited layer 130 and the deposited material 531.

[0807] In some non-limiting examples, the patterned coating non-transition portion 101 is formed along at least one lateral axis (including but not limited to the X axis). n May have a width w1 and patterned coating transition region 101 t It may have a width w2. In some non-limiting examples, the patterned coating non-transition portion 101 n The patterned coating transition region 101 may have a cross-sectional area that, in some non-limiting examples, may be approximated by multiplying the average film thickness d2 by the width w1. t can have a cross-sectional area, which in some non-limiting examples can be obtained by transitioning across the patterned coating region 101. t The average film thickness is approximated by multiplying the width w1.

[0808] In some non-limiting examples, w1 may exceed w2. In some non-limiting examples, the quotient of w1 / w2 may be at least about one of 5, 10, 20, 50, 100, 500, 1,000, 1,500, 5,000, 10,000, 50,000, and 100,000.

[0809] In some non-limiting examples, at least one of w1 and w2 may exceed the average film thickness d1 of the underlying layer 710.

[0810] In some non-limiting examples, at least one of w1 and w2 may exceed d2. In some non-limiting examples, both w1 and w2 may exceed d2. In some non-limiting examples, both w1 and w2 may exceed d1, and d1 may exceed d2.

[0811] Transition zone of sedimentary layers

[0812] As in Figure 6B As can be better seen in FIG, in some non-limiting examples, the patterned coating 110 in the first portion 101 can be surrounded by the deposited layer 130 in the second portion 102, such that the second portion 102 has a boundary defined by another edge 635 of the deposited layer 130 in a laterally oriented direction along each lateral axis. In some non-limiting examples, the laterally oriented deposited layer edge 635 can be defined by the perimeter of the second portion 102 in such an orientation.

[0813] In some non-limiting examples, the second portion 102 may include at least one deposition layer transition region 102 in the lateral orientation. t The thickness of the deposition layer 130 can transition from a maximum thickness to a decreasing thickness. The range of the second portion 102 that does not exhibit this transition can be defined as the non-transition portion 102 of the deposition layer of the second portion 102. n In some non-limiting examples, the deposition layer 130 may be located in the non-transition portion 102 of the second portion 102. n A basically closed coating 140 is formed in the middle.

[0814] In some non-limiting examples, in the plan view, the sedimentary layer transition region 102 t It can be laterally oriented towards the non-transition portion 102 of the deposition layer in the second part 102 n It extends between the edge of the sedimentary layer and 635.

[0815] In some non-limiting examples, in the plan view, the sedimentary layer transition region 102 t The non-transition portion 102 of the sedimentary layer along the second part 102 n The surrounding area extends.

[0816] In some non-limiting examples, along at least one lateral axis, the non-transition portion 102 of the deposition layer of the second portion 102 n It can occupy the entire second part 102, so that there is no sedimentary transition region 102 between it and the first part 101. t .

[0817] like Figure 6A As shown, in some non-limiting examples, the deposition layer 130 is in the non-transition portion 102 of the second portion 102. n The film may have an average film thickness d3, which can be in the range of about 1 nm-500 nm, 5 nm-200 nm, 5 nm-40 nm, 10 nm-30 nm, and 10 nm-100 nm. In some non-limiting examples, d3 may exceed one of about 10 nm, 50 nm, and 100 nm. In some non-limiting examples, the deposition layer of the second portion 102 is a non-transition portion 102. t The average film thickness d3 of the deposited layer 130 can be substantially the same (constant) therebetween.

[0818] In some non-limiting examples, d3 may exceed the average film thickness d1 of the underlying layer 710.

[0819] In some non-limiting examples, the quotient d3 / d1 can be at least about one of 1.5, 2, 5, 10, 20, 50, or 100. In some non-limiting examples, the quotient d3 / d1 can be within a range of about one of 0.1-10 and 0.2-40.

[0820] In some non-limiting examples, d3 may exceed the average film thickness d2 of the patterned coating 110.

[0821] In some non-limiting examples, the quotient d3 / d2 can be at least about one of 1.5, 2, 5, 10, 20, 50, or 100. In some non-limiting examples, the quotient d3 / d2 can be within a range of about one of 0.2-10 and 0.5-40.

[0822] In some non-restrictive examples, d3 may exceed d2 and d2 may exceed d1. In some other non-restrictive examples, d3 may exceed d1 and d1 may exceed d2.

[0823] In some non-restrictive examples, the quotient d2 / d1 can be between approximately 0.2-3 and 0.1-5.

[0824] In some non-limiting examples, along at least one lateral axis (including but not limited to the X-axis), the non-transition portion 102 of the deposition layer of the second portion 102 n It may have a width w3. In some non-limiting examples, the deposition layer non-transition portion 102 of the second portion 102 n It may have a cross-sectional area a3, which in some non-limiting examples can be approximated by multiplying the average film thickness d3 by the width w3.

[0825] In some non-limiting examples, w3 may extend beyond the non-transition portion 101 of the patterned coating. n In some non-limiting examples, w1 may exceed w3.

[0826] In some non-limiting examples, the quotient w1 / w3 can be in a range of about one of 0.1-10, 0.2-5, 0.3-3, and 0.4-2. In some non-limiting examples, the quotient w3 / w1 can be at least about one of 1, 2, 3, and 4.

[0827] In some non-limiting examples, w3 may exceed the average film thickness d3 of the deposited layer 130.

[0828] In some non-limiting examples, the quotient w3 / d3 may be at least about 10, 50, 100, and 500. In some non-limiting examples, the quotient w3 / d3 may not be greater than about 100,000.

[0829] In some non-limiting examples, the sedimentary layer 130 may have a sedimentary layer transition region 102. t The thickness decreases from its maximum value to its minimum value. In some non-limiting examples, this maximum value may be close to the deposition layer transition region 102 of the second part 102. t and the non-transition portion 102 of the deposition layer n The boundary between them. In some non-limiting examples, this minimum value may be close to the edge of the deposition layer 635. In some non-limiting examples, this maximum value may be the non-transition portion 102 of the deposition layer in the second part 102. n In some non-limiting examples, the minimum value may be in the range of about 0 nm to about 0.1 nm. In some non-limiting examples, the minimum value may be the average film thickness d3 of the deposition layer of the second portion 102 in the non-transition portion 102. n The average film thickness d3 in.

[0830] In some non-limiting examples, the sedimentary layer transition region 102 t The thickness profile in can be inclined. In some non-limiting examples, such a profile can be tapered. In some non-limiting examples, the taper can follow a linear, non-linear, parabolic, and exponential decay profile.

[0831] In some non-limiting examples, although not shown, the deposition layer 130 may be in the deposition layer transition region 102. t The middle layer completely covers the lower layer 710. In some non-limiting examples, the deposition layer 130 may be in the deposition layer transition region 102. t At least a portion of it includes a substantially closed coating 140. In some non-limiting examples, in the deposition layer transition region 102 t In the middle, at least a portion of the lower layer 710 may not be covered by the sediment layer 130.

[0832] In some non-limiting examples, the deposition layer 130 may be in the deposition layer transition region 102. t At least a portion of the substrate includes a discontinuous layer 160.

[0833] Those skilled in the art will understand that, although not shown, patterned material 411 may also be present to some extent at the interface between deposited layer 130 and underlying layer 710. This material may be deposited due to a masking effect, where the deposited pattern differs from the mask pattern, and in some non-limiting examples, may result in some evaporated patterned material 411 depositing on the masked portion of the target exposed layer surface 11. In some non-limiting examples, this material may be formed as at least one of a particulate structure 150 and a thin film with a thickness substantially not exceeding the average thickness of the patterned coating 110.

[0834] overlapping

[0835] In some non-limiting examples, although not shown, the deposited layer edge 635 may be laterally directed toward the patterned coating transition region 101 of the first portion 101. t The first portion 101 and the second portion 102 are spaced apart such that there is no overlap between the first portion 101 and the second portion 102 in a lateral direction.

[0836] In some non-limiting examples, at least a portion of the first portion 101 and at least a portion of the second portion 102 may overlap laterally. This overlap can be confirmed by the overlapping portion 603, such as... Figure 6A Some non-limiting examples show that at least a portion of the second portion 102 overlaps with at least a portion of the first portion 101.

[0837] In some non-limiting examples, although not shown, the deposition layer transition region 102 t At least a portion of the patterned coating may be disposed in the patterned coating transition region 101 t In some non-limiting examples, the patterned coating transition region 101 t At least a portion may substantially lack at least one of the deposited layer 130 and the deposited material 531. In some non-limiting examples, the deposited material 531 may be present in the patterned coating transition region 101. t A discontinuous layer 160 is formed on at least a portion of the exposed layer surface 11 .

[0838] In some non-limiting examples, although not shown, the deposition layer transition region 102 t At least a portion may be disposed in the patterned coating non-transition portion 101 of the first portion 101. n on at least a portion of .

[0839] Although not shown, persons of ordinary skill in the relevant art will understand that, in some non-limiting examples, the overlapping portion 603 may reflect a scenario in which at least a portion of the first portion 101 overlaps with at least a portion of the second portion 102 .

[0840] Thus, in some non-limiting examples, the patterned coating transition region 101 t At least a portion of the deposition layer may be disposed in the deposition layer transition region 102 t In some non-limiting examples, the deposition layer transition region 102 t At least a portion may be substantially free of at least one of the patterned coating 110 and the patterned material 411. In some non-limiting examples, the patterned material 411 may be present in the deposition layer transition region 102. tA discontinuous layer 160 is formed on at least a portion of the exposed layer surface.

[0841] In some non-limiting examples, the patterned coating transition region 101 t At least a portion of the second portion 102 may be disposed in the deposition layer non-transition portion 102 n on at least a portion of .

[0842] In some non-limiting examples, the patterned coating edge 615 may be laterally directed toward the non-transition portion 102 of the deposited layer from the second portion 102. n Separately spaced.

[0843] In some non-limiting examples, the deposition layer 130 may be formed as a deposition layer non-transition portion 102 across the second portion 102. n Transition region 102 between sedimentary layers t Both are single, monolithic coatings.

[0844] In some non-limiting examples, at least one deposited layer 130 (including, but not limited to, the initial deposited layer 130) may at least partially provide the functionality of EIL 239 in the emission region 210. Non-limiting examples of the deposited material 531 used to form such an initial deposited layer 130 include Yb, which may, for example, be about 1 nm to 3 nm thick.

[0845] Edge effects of patterned coatings and deposited layers

[0846] 7A to 7B Various potential behaviors of the patterned coating 130 at the deposition interface with the deposited layer 140 are described.

[0847] Go to Figure 7A The figure shows an example type 700 of device 100. a A first example of a portion at the boundary of a patterned coating deposition. Device 700 a The substrate 10 may include an exposed layer surface 11. A patterned coating 110 may be deposited on a first portion 101 of the exposed layer surface 11 of the underlying layer 710. A deposited layer 130 may be deposited on a second portion 102 of the exposed layer surface 11 of the underlying layer 710. As shown, and as a non-limiting example, the first portion 101 and the second portion 102 may be different and non-overlapping portions of the exposed layer surface 11.

[0848] The deposited layer 130 may include a first portion 1301 and a second portion 1302. As shown, as a non-limiting example, the first portion 1301 of the deposited layer 130 may substantially cover the second portion 102, and the second portion 1302 of the deposited layer 130 may partially overlap (protrude over) the first portion of the patterned coating 110.

[0849] In some non-limiting examples, because the patterned coating layer 110 may be formed such that its exposed layer surface 11 exhibits a substantially low initial adhesion probability for the deposition of the deposition material 531, a gap 729 may be formed between the protruding second portion 1302 of the deposition layer 130 and the exposed layer surface 11 of the patterned coating layer 110. Therefore, in a cross-sectional orientation, the second portion 1302 may not be in physical contact with the patterned coating layer 110 but may be spaced apart therefrom by the gap 729. In some non-limiting examples, the first portion 1301 of the deposition layer 130 may be in physical contact with the patterned coating layer 110 at the interface (boundary) between the first portion 101 and the second portion 102.

[0850] In some non-limiting examples, the protruding second portion 1302 of the deposited layer 130 may extend laterally over the patterned coating 110 to the average layer thickness d of the first portion 1301 of the deposited layer 130. a To a considerable degree. As a non-limiting example, as shown in the figure, the width w of the second part 1302 b The average layer thickness d of the first part 1301 can be compared with a Quite. In some non-restrictive examples, the width w of the second part 1302 b The average layer thickness d of the first portion 1301 a The ratio can range from approximately 1:1 to 1:3, 1:1 to 1:1.5, and 1:1 to 1:2. Although the average layer thickness d a In some non-limiting examples, the second portion 1302 may be substantially uniform across the first portion 1301, but in some non-limiting examples, the second portion 1302 may protrude above the patterned coating 110 to a degree (i.e., w) b It can vary to some extent across different parts of the exposed layer surface 11.

[0851] In some non-limiting examples, the deposited layer 130 may be shown to include a third portion 1303 disposed between the second portion 1302 and the patterned coating 110. As shown, the second portion 1302 of the deposited layer 130 may extend laterally above and may be longitudinally spaced apart from the third portion 1303 of the deposited layer 130, and the third portion 1303 may be in physical contact with the exposed layer surface 11 of the patterned coating 110. The average layer thickness d of the third portion 1303 of the deposited layer 130 may be greater than or equal to 0. c It may not exceed the average layer thickness d of its first part 1301 a And in some non-limiting examples, it is substantially smaller than the average layer thickness. In some non-limiting examples, the width w of the third part 1303 c May exceed the width w of the second portion 1302 bIn some non-limiting examples, the third portion 1303 may extend laterally to overlap the patterned coating 110 to a greater extent than the second portion 1302. In some non-limiting examples, the width w of the third portion 1303... c The average layer thickness d of the first portion 1301 a The ratio can range from approximately 1:2 to 3:1 or 1:1.2 to 2.5:1. Although the average layer thickness d a In some non-limiting examples, the first portion 1301 may be substantially uniform, but in some non-limiting examples, the third portion 1303 may highlight the degree to which the patterned coating 110 (overlaps with the patterned coating) is emphasized (i.e., w). c It can vary to some extent across different parts of the exposed layer surface 11.

[0852] In some non-limiting examples, the average layer thickness d of Part 3 1303 c The average layer thickness d of the first part 1301 may not exceed a Approximately 5%. As a non-restrictive example, d c It can be no greater than d a The third portion 1303 may be formed as a thin film (including but not limited to, in addition to the third portion being formed as a thin film), as shown, the deposition material 531 of the deposition layer 130 may be formed as a granular structure 150 (not shown) on a portion of the patterned coating 110. As a non-limiting example, such a granular structure 150 may include features that are physically separated from each other so that they do not form a continuous layer.

[0853] In some non-limiting examples, as shown, an NPC 720 may be disposed between the substrate 10 and the deposited layer 130. The NPC 720 may be disposed between a first portion 1301 of the deposited layer 130 and a second portion 102 of the exposed layer surface 11 of the underlying layer 710. The NPC 720 is shown disposed on the second portion 102, but not on the first portion 101, on which the patterned coating 110 has been deposited. The NPC 720 may be formed such that, at the interface (boundary) between the NPC 720 and the deposited layer 130, the surface of the NPC 720 may exhibit a substantially high initial adhesion probability for the deposition of the deposited material 531. Thus, the presence of the NPC 720 may facilitate the formation (growth) of the deposited layer 130 during deposition.

[0854] In some non-limiting examples, although not shown, the NPC 720 may be disposed on both the first portion 101 and the second portion 102 of the substrate 10, and the lower layer 710 may cover a portion of the NPC 720 disposed on the first portion 101, and another portion of the NPC 720 may be substantially without the lower layer 710 and the patterned coating 110, and the deposition layer 130 may cover this portion of the NPC 720.

[0855] Now go to Figure 7B In some non-limiting examples, a first portion 101 of the substrate 10 may be coated with a patterned coating 110, and a second portion may be coated with a deposited layer 130. In some non-limiting examples, the deposited layer 130 may partially overlap with a portion of the patterned coating 110 in a third portion 703 of the substrate 10. In some non-limiting examples, although not shown, in addition to the first portion 1301 (and, if present, at least one of the second portion 1302 and the third portion 1303), the deposited layer 130 may also include a fourth portion 1304, which may be disposed between the first portion 1301 and the second portion 1302 of the deposited layer 130 and in physical contact with the exposed surface 11 of the patterned coating 110. In some non-limiting examples, the fourth portion 1304 of the deposited layer 130, which overlaps with a subset of the patterned coating in the third portion 703, may be in physical contact with its exposed surface 11. In some non-limiting examples, the overlap in the third part 703 may be formed due to the lateral growth of the deposited layer 130 during either the open-mask or maskless deposition process. In some non-limiting examples, although the exposed surface 11 of the patterned coating 110 may exhibit a substantially low initial adhesion probability for the deposition of the deposited material 531, and therefore the probability of material nucleation on the exposed surface 11 may be low, the deposited layer 130 may also grow laterally as the thickness of the deposited layer 130 grows and may cover a subset of the patterned coating 110, as shown.

[0856] In some non-limiting examples, it has been observed that performing either masked or maskless deposition of the deposited layer 130 can cause the deposited layer 130 to exhibit a tapered cross-sectional profile near the interface between the deposited layer 130 and the patterned coating 110.

[0857] In some non-limiting examples, the average layer thickness of the deposited layer 130 near the interface may not exceed the average film thickness d3 of the deposited layer 130. Although this tapered profile may be illustrated as at least one of curved and arched, in some non-limiting examples, the profile may be one of substantially linear and non-linear. As a non-limiting example, the average film thickness d3 of the deposited layer 130 may decrease in a region near the interface in at least one of a substantially linear, exponential, and quadratic manner, without limitation.

[0858] It has been observed that the contact angle θ of the deposited layer 130 is close to the interface between the deposited layer 130 and the patterned coating 110. c This can vary depending on the properties of the patterned coating 110, such as the initial adhesion probability. It can be further assumed that, in some non-limiting examples, the contact angle θ of the core ( Figure 15 The contact angle θ of the thin film formed by deposition 130 can indicate the thin film contact angle. c See also Figure 7B As a non-limiting example, the contact angle θ c The contact angle θ can be determined by measuring the slope of a tangent line to the deposited layer 130 close to the interface between the deposited layer 130 and the patterned coating 110. In some non-limiting examples, where the cross-sectional tapered profile of the deposited layer 130 is substantially linear, the contact angle θ is c The contact angle θ can be determined by measuring the slope of the deposited layer 130 near the interface. As will be understood by those skilled in the art, the contact angle θ... c Typically, it can be measured relative to a non-zero angle of the underlying layer 710. In this disclosure, for simplicity of illustration, the patterned coating 110 and the deposited layer 130 may be shown as being deposited on a flat surface. However, one of ordinary skill in the relevant art will appreciate that the patterned coating 110 and the deposited layer 130 may be deposited on an uneven surface.

[0859] In some non-restrictive examples, such as Figure 7A As shown, the contact angle θ of the deposited layer 130 c The contact angle θ may exceed about 90°, and as a non-limiting example, the deposited layer 130 may be shown to include a portion 1302 that extends across the interface between the patterned coating 110 and the deposited layer 130 and may be separated from the patterned coating 110 (and, in some non-limiting examples, a third portion 1303 of the deposited layer 130) by a gap 729. In this non-limiting scenario, the contact angle θ c In some non-restrictive examples, the angle may exceed 90°.

[0860] In some non-limiting examples, there may be a need to exhibit a substantially high contact angle θ. c The scenario is a deposition layer of 140°. As a non-limiting example, the contact angle θ...c It can exceed one of approximately 10°, 15°, 20°, 25°, 30°, 35°, 40°, 50°, 70°, 75°, and 80°. As a non-limiting example, it has a substantially high contact angle θ. c The deposited layer 130 allows for the production of finely patterned features while maintaining a substantially high aspect ratio. As a non-limiting example, there may be cases where a contact angle θ exceeding approximately 90° is required. c The scenario is a deposition layer of 130. As a non-limiting example, the contact angle θ... c It can exceed one of approximately 90°, 95°, 100°, 105°, 110°, 120°, 130°, 135°, 140°, 145°, 150° and 170°.

[0861] In some non-limiting examples, the contact angle θ of the deposition layer 130 c It can be measured at the edge near the interface between the deposited layer and the patterned coating 110, as shown. Figure 7A In the middle, the contact angle θ c It can exceed about 90°, which in some non-limiting examples can result in a subset of the deposited layer 130, namely a second portion 1302, which is spaced apart from the patterned coating 110 (and, in some non-limiting examples, a third portion 1303 of the deposited layer 130) by gap 729.

[0862] Granular structure

[0863] NPs are particles of matter whose main characteristic size is in the nanometer (nm) range, generally understood to be between approximately 1 nm and 300 nm. At the nanoscale, NPs of a given material can have unique properties (including but not limited to optical, chemical, physical, and electrical properties) relative to the same material in bulk form, including but not limited to the amount of EM radiation absorbed by such NPs at different wavelengths (ranges).

[0864] These properties can be exploited to improve the performance of a plurality of NPs when formed as a layer of a layered semiconductor device 100 , including but not limited to the optoelectronic device 200 .

[0865] The existing mechanisms for introducing such NP layers into this device 100 have some drawbacks.

[0866] First, in some non-limiting examples, such NPs are formed as either a tightly packed layer of such device 100 or dispersed in a matrix material. Therefore, in some non-limiting examples, the thickness of such an NP layer can be much greater than the feature size of the NP itself. This thickness of the NP layer can impart undesirable characteristics in at least one of device performance, device stability, device reliability, and device lifetime, which can reduce (including, but not limited to, eliminate) any known advantages provided by the unique properties of the NP.

[0867] Second, the techniques for synthesizing NPs in such devices and using them in such devices can introduce large amounts of at least one of C, O and S through various mechanisms.

[0868] In some non-limiting examples, wet chemical methods are typically used to introduce NPs with precisely controlled characteristic dimensions, length, width, diameter, height, size distribution, shape, surface coverage, configuration, deposition density, dispersion, and composition into optoelectronic devices 200. However, in some non-limiting examples, such methods employ organic end-capping groups (such as the synthesis of citric acid-terminated Ag NPs) to stabilize the NPs, but these organic end-capping groups introduce at least one of C, O, and S into the synthesized NPs.

[0869] Furthermore, in some non-limiting examples, due to the use of a solvent in the deposition, the NP layer deposited from the solution typically contains at least one of C, O, and S.

[0870] In addition, these elements may be introduced as contaminants during at least one of the wet chemical processes and the deposition of the NP layer.

[0871] Regardless of how it is introduced, the presence of at least one of C, O and S in the NP layer of such device 100 may impair at least one of the performance, stability, reliability and lifespan of such device 100.

[0872] Third, when depositing an NP layer from a solution, as the solvent used dries, the NP layer may tend to have non-uniform properties across the entire NP layer and between different patterned regions of such a layer. In some non-limiting examples, the edges of a given layer may be significantly thicker and thinner than at least one of the interior regions of such a layer, and this difference may adversely affect at least one of device performance, stability, reliability, and lifetime.

[0873] Fourth, although there are other methods (and processes) for synthesizing and depositing at least one of NPs in addition to wet chemical synthesis and solution deposition processes, including but not limited to vacuum-based methods such as, but not limited to, PVD, such methods tend to provide poor control over at least one of the characteristic size, length, width, diameter, height, size distribution, shape, surface coverage, configuration, deposition density, dispersion, and composition of the NPs deposited thereby. In some non-limiting examples, during PVD, NPs tend to form tightly packed films as their size increases. Therefore, methods such as PVD are generally less suitable for forming layers of large dispersed NPs with low surface coverage. Conversely, poor control over at least one of the characteristic size, length, width, diameter, height, size distribution, shape, surface coverage, configuration, deposition density, dispersion, and composition imparted by such methods can result in poor device performance, stability, reliability, and lifetime.

[0874] In some non-restrictive examples, such as... Figure 6A As shown in FIG, there may be at least one particle disposed on the exposed layer surface 11 of the underlying layer 710, including but not limited to at least one of nanoparticles (NPs), islands, plates, disconnected clusters, and networks (collectively referred to as particle structures 150). In some non-limiting examples, the underlying layer 710 may be the patterned coating 110 in the first portion 101. In some non-limiting examples, at least one particle structure 150 may be disposed on the exposed layer surface 11 of the patterned coating 110. In some non-limiting examples, there may be a plurality of such particle structures 150.

[0875] In some non-limiting examples, at least one particulate structure 150 may include particulate material. In some non-limiting examples, the particulate material may be the same as the deposited material 531 in the deposited layer.

[0876] In some non-limiting examples, at least one of the particulate material in the discontinuous layer 160 of the first part 101, the deposited material 531 in the deposited layer 130, and the material that may form the underlying lower layer 710 may include a common metal.

[0877] In some non-limiting examples, the particulate material may include an element selected from at least one of K, Na, Li, Ba, Cs, Yb, Ag, Au, Cu, Al, Mg, Zn, Cd, Sn, and Y. In some non-limiting examples, the particulate structure material may include an element selected from at least one of K, Na, Li, Ba, Cs, Yb, Ag, Au, Cu, Al, and Mg. In some non-limiting examples, the element may include at least one of Cu, Ag, and Au. In some non-limiting examples, the element may be Cu. In some non-limiting examples, the element may be Al. In some non-limiting examples, the element may include at least one of Mg, Zn, Cd, and Yb. In some non-limiting examples, the element may include at least one of Mg, Ag, Al, Yb, and Li. In some non-limiting examples, the element may include at least one of Mg, Ag, and Yb. In some non-limiting examples, the element may include at least one of Mg and Ag. In some non-restrictive examples, the element can be Ag.

[0878] In some non-limiting examples, the particulate material may include a pure metal. In some non-limiting examples, at least one particulate structure 150 may be a pure metal. In some non-limiting examples, at least one particulate structure 150 may be (substantially) pure Ag. In some non-limiting examples, substantially pure Ag may have a purity of about 95%, 99%, 99.9%, 99.99%, 99.999%, and 99.9995%. In some non-limiting examples, at least one particulate structure 150 may be (substantially) pure Mg. In some non-limiting examples, substantially pure Mg may have a purity of at least about 95%, 99%, 99.9%, 99.99%, 99.999%, and 99.9995%.

[0879] In some non-limiting examples, at least one granular structure 150 may include an alloy. In some non-limiting examples, the alloy may be at least one of an Ag-containing alloy, a Mg-containing alloy, and an AgMg-containing alloy. In some non-limiting examples, the AgMg-containing alloy may have an alloy composition ranging from about 1:10 (Ag:Mg) to about 10:1 by volume.

[0880] In some non-limiting examples, the particulate material may include other metals that replace or combine with Ag. In some non-limiting examples, the particulate material may include an alloy of Ag with at least one other metal. In some non-limiting examples, the particulate material may include an alloy of Ag with at least one of Mg and Yb. In some non-limiting examples, such an alloy may be a binary alloy having a composition between about 5 vol% and 95 vol% Ag, with the remainder being other metals. In some non-limiting examples, the particulate material may include Ag and Mg. In some non-limiting examples, the particulate material may include an Ag:Mg alloy having a composition between about 1:10 and 10:1 by volume. In some non-limiting examples, the particulate material may include Ag and Yb. In some non-l...

Claims

1. A layered semiconductor device comprising a compound comprising an adamantane moiety and at least one low surface tension moiety bonded thereto.

2. The device of claim 1 , wherein the critical surface tension of the low surface tension portion is no more than about one of 25 dynes / cm, 21 dynes / cm, 20 dynes / cm, 19 dynes / cm, 18 dynes / cm, 17 dynes / cm, 16 dynes / cm, 15 dynes / cm, 14 dynes / cm, 13 dynes / cm, 12 dynes / cm, 11 dynes / cm, and 10 dynes / cm.

3. The device of claim 1, wherein the low surface tension moiety is bonded to atoms of the adamantane moiety in at least one of the following ways: directly and via a linker moiety.

4. The device of claim 3, wherein the linker moiety comprises at least one of substituted alkylene, unsubstituted alkylene, substituted amine, unsubstituted amine, substituted fluoroalkylene, unsubstituted fluoroalkylene, carbon (C), methylene, ethylene, CHF, difluorocarbene, nitrogen (N), NH, sulfur (S), oxygen (O), ether, substituted cycloalkylene, unsubstituted cycloalkylene, and hydrocarbon aromatic moieties.

5. The device of claim 3, wherein the linker moiety comprises at least one of a substituted arylene, an unsubstituted arylene, a substituted heteroarylene moiety, an unsubstituted heteroarylene moiety, a substituted fluorinated arylene moiety, and an unsubstituted fluorinated arylene moiety. The device according to claim 1 , wherein the low surface tension portion comprises a fluorine (F)-containing portion.

7. The device of claim 6, wherein the low surface tension moiety comprises at least one of: F, substituted fluoroalkyl, unsubstituted fluoroalkyl, substituted fluoroalkoxy, unsubstituted fluoroalkoxy, substituted fluoroalkylsiloxy, unsubstituted fluoroalkylsiloxy, substituted fluorocycloalkyl, unsubstituted fluorocycloalkyl, substituted fluoroaryl, and unsubstituted fluoroaryl.

8. The device according to claim 6, wherein the low surface tension portion comprises at least one of a CF2 group, a CF2H group, a CF3 group, and a CH2CF3 group. 9 . The device according to claim 1 , wherein the low surface tension portion comprises a silicon (Si)-containing portion.

10. The device of claim 9, wherein the low surface tension portion comprises a siloxane-containing group.

11. The device according to claim 1, wherein the low surface tension portion comprises a terminal portion and a linker portion, and the molecular structure of the low surface tension portion is represented by formula (AD-2): in: L represents the linker moiety, T represents the terminal portion, x is an integer corresponding to the number of terminal parts T, and * indicates the bonding site of the adamantane moiety to which the low surface tension moiety is attached.

12. The device of claim 11, wherein x is an integer between about 1-3.

13. The device according to claim 1, wherein the low surface tension portion comprises an aromatic portion, a terminal portion, and a linker portion, and the molecular structure of the low surface tension portion is represented by formula (AD-3): in: L represents the linker moiety, T represents the terminal portion, Ar represents the aromatic moiety, x is an integer corresponding to the number of terminal parts T, y is an integer corresponding to the number of aromatic moieties Ar, and * indicates the bonding site of the adamantane moiety to which the low surface tension moiety is attached.

14. The device of claim 13, wherein x is an integer between about 1-5, and y is an integer between about 1-3.

15. The device according to claim 1, wherein the low surface tension portion comprises an aromatic portion, a F-containing portion and a linker portion, and the molecular structure of the low surface tension portion is represented by formula (AD-4): in: L represents the linker moiety, R f represents the F-containing part, x is the same as the part containing F R f The integer corresponding to the number of Ar represents the aromatic moiety, y is an integer corresponding to the number of aromatic moieties, and * indicates the bonding site of the adamantane moiety to which the low surface tension moiety is attached.

16. The device of claim 15, wherein x is an integer between about 1-5, and y is an integer between about 1-3.

17. The device according to claim 1, wherein the low surface tension portion comprises a phenyl portion, a terminal portion, and a linker portion, and the molecular structure of the low surface tension portion is represented by formula (AD-5): in: L represents the linker moiety, T represents the terminal portion, x is an integer corresponding to the number of terminal parts T, Ph represents the phenyl moiety, and * indicates the bonding site of the adamantane moiety to which the low surface tension moiety is attached.

18. The device of claim 17, wherein x is an integer between about 1-5.

19. The device according to claim 1, wherein the low surface tension portion comprises a phenyl portion, a F-containing portion and a linker portion, and the molecular structure of the low surface tension portion is represented by formula (AD-6): in: L represents the linker moiety, R f represents the F-containing part, x is the same as the part containing F R f The integer corresponding to the number of Ph represents the phenyl moiety, and * indicates the bonding site of the adamantane moiety to which the low surface tension moiety is attached.

20. The device of claim 19, wherein x is an integer between about 1-5.

21. The device according to claim 7, wherein the molecular structure of the fluoroalkoxy moiety is represented by formula (AD-7): *-O a -(CH2) b (CF2) c -M (AD-7) in: M represents one of H, D and F atoms, a is an integer corresponding to the number of O atoms, b is an integer corresponding to the number of CH2 units, c represents an integer corresponding to the number of CF2 units, and * indicates the bonding site of the phenyl moiety to which the fluoroalkoxy moiety is attached.

22. The device of claim 21, wherein a is 1, b is an integer between about 1-4, and c is an integer between about 1-12.

23. The device of claim 1, wherein the molecular weight of the compound is at least about one of 500 g / mol, 550 g / mol, 580 g / mol, 650 g / mol, 750 g / mol, 1,000 g / mol, 1,200 g / mol, 1,300 g / mol, 1,500 g / mol, 1,700 g / mol, 2,000 g / mol, 2,200 g / mol, and 2,500 g / mol.

24. The device of claim 1, further comprising: a patterned coating comprising the compound, the patterned coating disposed on a first layer surface of an underlying layer in a laterally facing first portion thereof; as well as A deposition layer composed of a deposition material deposited on the second portion; wherein the first portion is substantially free of a closed coating of the deposition material.

25. The device of claim 24, further comprising an emission region, the emission region comprising: a first electrode and a second electrode, and At least one semiconducting layer is disposed between the first electrode and the second electrode.

26. The device of claim 25, wherein the first portion excludes a lateral orientation of the emitting region.

27. The device according to claim 26, wherein the second electrode includes at least a portion of the deposited layer as its layer.

28. The device of claim 25, wherein the first portion comprises a lateral orientation of the emitting region.

29. The device according to claim 28, further comprising an auxiliary electrode including the deposited layer as a layer thereof.

Images