Semiconductor device

Abstract

Provided is a semiconductor device capable of improving characteristics. According to one embodiment, a semiconductor device includes first to third electrodes extending in a first direction and a semiconductor component. The semiconductor component includes: a first semiconductor layer including Alx1Ga1-x1N (0 < = x1lt, 1); and a second semiconductor layer containing Alx2Ga1-x2N (0lt, x2 < = 1, x1lt, x2). The third electrode includes a first electrode portion and a second electrode portion. The first electrode portion thickness of the first electrode portion is greater than the second electrode portion thickness of the second electrode portion.

Description

[0001] This application is based on Japanese Patent Application No. 2023-194829 (filing date November 16, 2023) and Japanese Patent Application No. 2024-83077 (filing date May 22, 2024), and claims the benefit of priority from these applications. This application incorporates the entire contents of these applications by reference. Technical Field

[0002] Embodiments of the present invention relate to a semiconductor device. Background Art

[0003] For example, in semiconductor devices such as transistors, it is desired to improve characteristics. Summary of the invention

[0004] Embodiments of the present invention provide a semiconductor device capable of improving characteristics.

[0005] According to an embodiment of the present invention, a semiconductor device includes a first electrode extending along a first direction, a second electrode extending along the first direction, a third electrode extending along the first direction, and a semiconductor component. A second direction from the first electrode to the second electrode intersects the first direction. The position of the third electrode in the second direction is between the position of the first electrode in the second direction and the position of the second electrode in the second direction. The third electrode includes a first electrode portion and a second electrode portion. The second electrode portion is electrically connected to the first electrode portion. The semiconductor component includes a first electrode portion including Al x1 Ga 1-x1 N (0≤x1<1) and the first semiconductor layer containing Al x2 Ga 1-x2A second semiconductor layer of N (0 < x2 ≤ 1, x1 < x2). The first semiconductor layer includes a first partial region, a second partial region, a third partial region, a fourth partial region, a fifth partial region, a sixth partial region, and a seventh partial region. The direction from the first partial region toward the first electrode is along a third direction that intersects a plane including the first direction and the second direction. The direction from the second partial region toward the second electrode is along the third direction. The direction from the third partial region toward the first electrode portion is along the third direction. The position of the fourth partial region in the second direction is between the position of the first partial region in the second direction and the position of the third partial region in the second direction. The position of the fifth partial region in the second direction is between the position of the third partial region in the second direction and the position of the second partial region in the second direction. The position of the third partial region in the first direction is between the position of the seventh partial region in the first direction and the position of the sixth partial region in the first direction. The second semiconductor layer includes a first semiconductor portion, a second semiconductor portion, a third semiconductor portion, and a fourth semiconductor portion. The direction from the fourth partial region toward the first semiconductor portion is along the third direction. The direction from the fifth partial region toward the second semiconductor portion is along the third direction. The direction from the sixth partial region toward the third semiconductor portion is along the third direction. The direction from the seventh partial region toward the fourth semiconductor portion is along the third direction. The third semiconductor portion is disposed between the sixth partial region and the second electrode portion in the third direction. At least a part of the first electrode portion is between the first semiconductor portion and the second semiconductor portion in the second direction. The at least a part of the first electrode portion is between the fourth semiconductor portion and the third semiconductor portion in the first direction. The thickness of the first electrode portion of the first electrode portion along the third direction is thicker than the thickness of the second electrode portion of the second electrode portion along the third direction.

[0006] The semiconductor device according to the above structure can provide a semiconductor device capable of improving characteristics. BRIEF DESCRIPTION OF THE DRAWINGS

[0007] Figure 1 is a schematic top view illustrating a semiconductor device according to the first embodiment.

[0008] Figure 2 is a schematic cross-sectional view illustrating a semiconductor device according to the first embodiment.

[0009] Figure 3It is a schematic cross-sectional view illustrating the semiconductor device according to the first embodiment.

[0010] Figure 4 It is a schematic plan view illustrating the semiconductor device according to the first embodiment.

[0011] Figure 5 It is a schematic plan view illustrating a semiconductor device according to a second embodiment.

[0012] Figure 6 It is a schematic cross-sectional view illustrating a semiconductor device according to a second embodiment.

[0013] Figure 7 It is a schematic plan view illustrating a semiconductor device according to a third embodiment.

[0014] Figure 8 It is a schematic cross-sectional view illustrating a semiconductor device according to a third embodiment.

[0015] Fig. 9 It is a schematic plan view illustrating a semiconductor device according to a third embodiment.

[0016] (Explanation of symbols)

[0017] 10: first semiconductor layer; 10B: nitride layer; 10S: substrate; 10i: high resistance region; 20: second semiconductor layer; 21-24: first to fourth semiconductor parts; 31: nitride component; 31a: first nitride region; 41: first insulating component; 41a: first insulating region; 42: second insulating component; 42a, 42b: first and second insulating parts; 51-53: first to third electrodes; 53T: groove; 53a~53g: 1st to 7th electrode parts; 110, 111, 120, 130, 131: semiconductor device; BD1~BD3: 1st to 3rd boundaries; D1~D3: 1st to 3rd directions; L1~L5: 1st to 5th electrode part lengths; R1~R3: 1st to 3rd regions; r1~r7: 1st to 7th partial regions; t1~t7: 1st to 7th electrode part thicknesses. DETAILED DESCRIPTION

[0018] Hereinafter, various embodiments of the present invention will be described with reference to the drawings.

[0019] The drawings are schematic or conceptual drawings, and the relationship between the thickness and width of each part, the ratio of the size between the parts, etc. are not necessarily the same as in reality. Even when the same part is shown, the mutual size and ratio may be expressed differently according to the drawings.

[0020] In the present specification and each drawing, regarding the drawings that have appeared previously, the same elements as those described above are denoted by the same reference numerals, and detailed description thereof is appropriately omitted.

[0021] (First embodiment)

[0022] Figure 1 It is a schematic plan view illustrating the semiconductor device according to the first embodiment.

[0023] Figure 2 as well as Figure 3 It is a schematic cross-sectional view illustrating the semiconductor device according to the first embodiment.

[0024] Figure 2 yes Figure 1 A1-A2 line profile. Figure 3 yes Figure 1 B1-B2 line profile.

[0025] like Figures 1 to 3 As shown, the semiconductor device 110 according to the embodiment includes a first electrode 51 , a second electrode 52 , a third electrode 53 , and a semiconductor component 10M. The semiconductor component 10M includes a first semiconductor layer 10 and a second semiconductor layer 20 .

[0026] The first electrode 51, the second electrode 52, and the third electrode 53 extend along the first direction D1. The first direction D1 is set as the Y-axis direction. A direction perpendicular to the Y-axis direction is set as the X-axis direction. A direction perpendicular to the Y-axis direction and the X-axis direction is set as the Z-axis direction. In each of these electrodes, the length in the Y-axis direction is longer than the length in the X-axis direction, and longer than the length in the Z-axis direction.

[0027] The second direction D2 from the first electrode 51 to the second electrode 52 intersects with the first direction D1. The second direction D2 is, for example, the X-axis direction.

[0028] The position of the third electrode 53 in the second direction D2 is between the position of the first electrode 51 in the second direction D2 and the position of the second electrode 52 in the second direction D2. The third electrode 53 includes a first electrode portion 53a and a second electrode portion 53b. The second electrode portion 53b is electrically connected to the first electrode portion 53a. The first electrode portion 53a extends along the first direction D1.

[0029] The first semiconductor layer 10 includes Al x1 Ga 1-x1 N (0≤x1<1). The composition ratio x1 may be, for example, greater than or equal to 0 and less than 0.13. The first semiconductor layer 10 may be GaN or AlGaN.

[0030] The second semiconductor layer 20 includes Alx2 Ga 1-x2 N (0 < x2 ≤ 1, x1 < x2). The composition ratio x2 can be, for example, 0.13 or more and 0.4 or less. The second semiconductor layer 20 includes, for example, AlGaN.

[0031] The first semiconductor layer 10 includes a first partial region r1, a second partial region r2, a third partial region r3, a fourth partial region r4, a fifth partial region r5, a sixth partial region r6, and a seventh partial region r7. The direction from the first partial region r1 to the first electrode 51 is along the third direction D3.

[0032] As Figure 2 shown, the third direction D3 intersects the plane including the first direction D1 and the second direction D2. The third direction D3 is, for example, the Z-axis direction. The direction from the second partial region r2 to the second electrode 52 is along the third direction D3. The direction from the third partial region r3 to the first electrode portion 53a is along the third direction D3.

[0033] As Figure 2 shown, the position of the fourth partial region r4 in the second direction D2 is between the position of the first partial region r1 in the second direction D2 and the position of the third partial region r3 in the second direction D2. The position of the fifth partial region r5 in the second direction D2 is between the position of the third partial region r3 in the second direction D2 and the position of the second partial region r2 in the second direction D2.

[0034] As Figure 3 shown, the position of the third partial region r3 in the first direction D1 is between the position of the seventh partial region r7 in the first direction D1 and the position of the sixth partial region r6 in the first direction D1.

[0035] As Figure 2 and Figure 3 shown, the second semiconductor layer 20 includes a first semiconductor portion 21, a second semiconductor portion 22, a third semiconductor portion 23, and a fourth semiconductor portion 24. As Figure 2 shown, the direction from the fourth partial region r4 to the first semiconductor portion 21 is along the third direction D3. The direction from the fifth partial region r5 to the second semiconductor portion 22 is along the third direction D3.

[0036] As Figure 3 shown, the direction from the sixth partial region r6 to the third semiconductor portion 23 is along the third direction D3. The direction from the seventh partial region r7 to the fourth semiconductor portion 24 is along the third direction D3. The third semiconductor portion 23 is disposed between the sixth partial region r6 and the second electrode portion 53b in the third direction D3.

[0037] As Figure 2 As shown, at least a portion of the first electrode portion 53 a is located between the first semiconductor portion 21 and the second semiconductor portion 22 in the second direction D2 .

[0038] like Figure 3 As shown, at least a portion of the first electrode portion 53 a is located between the fourth semiconductor portion 24 and the third semiconductor portion 23 in the first direction D1.

[0039] like Figure 2 as well as Figure 3 As shown, a trench 53T is provided in a semiconductor component 10M including a first semiconductor layer 10 and a second semiconductor layer 20. A first electrode portion 53a is provided in the trench 53T (or a recess), and a second electrode portion 53b is provided outside the trench 53T.

[0040] In the semiconductor device 110, the current flowing between the first electrode 51 and the second electrode 52 can be controlled by the potential of the third electrode 53. The potential of the third electrode 53 can be a potential based on the potential of the first electrode 51. The first electrode 51 functions as a source electrode, for example. The second electrode 52 functions as a drain electrode, for example. The third electrode 53 functions as a gate electrode, for example. The semiconductor device 110 is, for example, a transistor.

[0041] The first semiconductor layer 10 includes a portion facing the second semiconductor layer 20. A carrier region is formed in this portion. The carrier region is, for example, a two-dimensional electron gas. The semiconductor device 110 is, for example, a HEMT (High Electron Mobility Transistor).

[0042] For example, the distance between the first electrode 51 and the third electrode 53 is shorter than the distance between the third electrode 53 and the second electrode 52. Stable operation is easily obtained.

[0043] As described above, the first electrode portion 53a is provided in the trench 53T. Thus, a high threshold value can be easily obtained. For example, a normally-off operation can be obtained. In the semiconductor device 110, the first electrode portion 53a can be provided between the fourth partial region r4 and the fifth partial region r5.

[0044] like Figure 3 As shown, the first electrode portion thickness t1 of the first electrode portion 53a along the third direction D3 is thicker than the second electrode portion thickness t2 of the second electrode portion 53b along the third direction D3. Since the first electrode portion thickness t1 is thick, for example, low electrical resistance is obtained. For example, stable switching operation can be achieved.

[0045] In one example, the high resistance region 10i can be formed by selectively implanting ions or the like in the peripheral region of the semiconductor component 10M (see Figure 3 ). The region into which ions etc. are not implanted corresponds to the active region.

[0046] For example, ions can be implanted into the semiconductor component 10M through the second electrode portion 53b. Since the second electrode portion 53b is thin, the high resistance region 10i can be stably obtained. For example, leakage current can be effectively suppressed. According to the embodiment, a semiconductor device with improved characteristics can be provided.

[0047] like Figure 3 As shown, the third electrode 53 may further include a third electrode portion 53c. The third electrode portion 53c is disposed between the first electrode portion 53a and the second electrode portion 53b. The third electrode portion 53c is electrically connected to the first electrode portion 53a and the second electrode portion 53b. The third electrode portion 53c is disposed between at least a portion of the first electrode portion 53a and the third semiconductor portion 23. The third electrode portion 53c is, for example, disposed in the trench 53T.

[0048] like Figure 3 As shown, the first electrode portion thickness t1 is thicker than the third electrode portion thickness t3 of the third electrode portion 53c along the third direction D3. Since the third electrode portion thickness t3 is thin, for example, by ion implantation through the third electrode portion 53c, a high resistance region 10i can be stably obtained.

[0049] like Figure 3 As shown, the third electrode 53 may further include a fourth electrode portion 53d. The fourth electrode portion 53d is electrically connected to the first electrode portion 53a. The fourth semiconductor portion 24 is disposed between the seventh partial region r7 and the fourth electrode portion 53d in the third direction D3. The first electrode portion thickness t1 is thicker than the fourth electrode portion thickness t4 of the fourth electrode portion 53d along the third direction D3. Since the fourth electrode portion thickness t4 is thin, for example, by implanting ions through the fourth electrode portion 53d, a high resistance region 10i can be stably obtained.

[0050] like Figure 3As shown, the third electrode 53 may further include a fifth electrode portion 53e. The fifth electrode portion 53e is disposed between the fourth electrode portion 53d and the first electrode portion 53a. The fifth electrode portion 53e is electrically connected to the fourth electrode portion 53d and the first electrode portion 53a. The fifth electrode portion 53e is disposed between the fourth semiconductor portion 24 and at least a portion of the first electrode portion 53a. The first electrode portion thickness t1 is thicker than the fifth electrode portion thickness t5 of the fifth electrode portion 53e along the third direction D3. Since the fifth electrode portion thickness t5 is thin, for example, by implanting ions through the fifth electrode portion 53e, a high resistance region 10i can be stably obtained.

[0051] For example, Figure 1 As shown, the semiconductor device 110 may include a first region R1, a second region R2, and a third region R3. The first region R1 is disposed between the second region R2 and the third region R3 in the first direction D1. The first region R1 is an active region. The second region R2 is one of a plurality of terminal regions. The third region R3 is another of a plurality of terminal regions. The electrical resistance in the second region R2 and the third region R3 is higher than the electrical resistance in the first region R1. For example, the second region R2 and the third region R3 include a high resistance region 10i. The first region R1 does not include the high resistance region 10i. The first region R1, the second region R2, and the third region R3 are included in the semiconductor component 10M. The first region R1, the second region R2, and the third region R3 are regions on the electrode side of the semiconductor component 10M.

[0052] In the embodiment, the leakage path can be stably suppressed around the end portion of the third electrode 53 in the Y-axis direction.

[0053] The first partial region r1, the second partial region r2, the third partial region r3, the fourth partial region r4, and the fifth partial region r5 are included in the first region R1. The sixth partial region r6 and the third semiconductor portion 23 are included in the second region R2. The crystallinity of the first region R1 is higher than that of the second region R2. Alternatively, the first region R1 includes crystals, and the second region R2 does not include crystals.

[0054] The seventh partial region r7 and the fourth semiconductor portion 24 are included in the third region R3. The crystallinity of the first region R1 is higher than that of the third region R3. Alternatively, the first region R1 includes crystals, and the third region R3 does not include crystals.

[0055] For example, by injecting ions such as Ar into the semiconductor layer, the crystallinity of the semiconductor layer is degraded, thereby forming the second region R2 and the third region R3. The first region R1 is a region where ions are not injected. The concentration of the first element in the second region R2 and the third region R3 is higher than the concentration of the first element in the first region R1. The first element includes at least one selected from the group consisting of Ar, P and N.

[0056] For example, the crystallinity of the first semiconductor portion 21 is higher than the crystallinity of at least a portion of the third semiconductor portion 23. Alternatively, the first semiconductor portion 21 includes crystals, and at least a portion of the third semiconductor portion 23 does not include crystals. For example, the crystallinity of the first semiconductor portion 21 is higher than the crystallinity of at least a portion of the fourth semiconductor portion 24. Alternatively, the first semiconductor portion 21 includes crystals, and at least a portion of the fourth semiconductor portion 24 does not include crystals.

[0057] For example, the crystallinity of the third partial region r3 is higher than that of the sixth partial region r6. Alternatively, the third partial region r3 contains crystals, and the sixth partial region r6 does not contain crystals. For example, the crystallinity of the third partial region r3 is higher than that of the seventh partial region r7. Alternatively, the third partial region r3 contains crystals, and the seventh partial region r7 does not contain crystals.

[0058] For example, Figure 3 As shown, the second region R2 includes a high resistance region 10i. The high resistance region 10i is a region into which Ar plasma is implanted. The sixth partial region r6 and the third semiconductor portion 23 are included in the high resistance region 10i. The crystallinity in these regions included in the high resistance region 10i is lower than the crystallinity in the region (first region R1) not included in the high resistance region 10i.

[0059] For example, the direction from at least a portion of the fourth electrode portion 53d to the first electrode portion 53a may be along the first direction D1. The direction from the first electrode portion 53a to at least a portion of the second electrode portion 53b may be along the first direction D1.

[0060] In an embodiment, at least a portion of the third electrode 53 may include polysilicon. For example, the first electrode portion 53a includes polysilicon. When the first electrode portion 53a includes polysilicon, for example, a change in threshold voltage is suppressed. For example, it is considered that electrical characteristics near the gate region are stabilized.

[0061] For example, the electrical resistivity of polysilicon is higher than that of a material including metal. When the first electrode portion 53a includes polysilicon, the electrical resistance of the first electrode portion 53a can be effectively reduced by the thick first electrode portion thickness t1.

[0062] In an embodiment, the thickness t1 of the first electrode portion may be 1.5 times or more the thickness t2 of the second electrode portion. The thickness t1 of the first electrode portion may also be 2 times or more the thickness t2 of the second electrode portion. The thickness t1 of the first electrode portion may also be 5 times or more the thickness t2 of the second electrode portion.

[0063] As Figure 3 shown, the length L1 of the first electrode portion 53a along the first direction D1 is defined as the length of the first electrode portion. The length L1 of the first electrode portion is longer than the length L2 of the second electrode portion 53b along the first direction D1. The length L1 of the first electrode portion is longer than the length L3 of the third electrode portion 53c along the first direction D1. The length L1 of the first electrode portion is longer than the length L4 of the fourth electrode portion 53d along the first direction D1. The length L1 of the first electrode portion is longer than the length L5 of the fifth electrode portion 53e along the first direction D1.

[0064] As Figure 3 shown, for example, the position of the first boundary BD1 between at least a part of the third partial region r3 and the sixth partial region r6 in the first direction D1 may be substantially the same as the position of the second boundary BD2 between the first electrode portion 53a and the third electrode portion 53c in the first direction D1.

[0065] For example, the position of the first boundary BD1 between at least a part of the third partial region r3 and the sixth partial region r6 in the first direction D1 may also be between the position of the second boundary BD2 between the first electrode portion 53a and the third electrode portion 53c in the first direction D1 and the position of the third semiconductor portion 23 in the first direction D1.

[0066] As Figure 2 and Figure 3 shown, the semiconductor device 110 may further include a nitride member 31. The nitride member 31 contains Al z1 Ga 1-z1 N (0 < z1 ≤ 1, x2 < z1). The composition ratio z1 may be, for example, 0.9 or more and 1 or less. The nitride member 31 may contain AlN.

[0067] The nitride member 31 includes a first nitride region 31a. The first nitride region 31a is disposed between the third partial region r3 and the first electrode portion 53a in the third direction D3. By providing the nitride member 31, for example, a high mobility is obtained. For example, a low on-resistance is obtained.

[0068] As Figure 2 and Figure 3As shown, the semiconductor device 110 may further include a first insulating component 41. The first insulating component 41 includes a first insulating region 41a. The first insulating region 41a is provided between the first nitride region 31a and the first electrode portion 53a. The first insulating component 41 includes at least one selected from the group consisting of oxygen and nitrogen, and silicon. The first insulating component 41 includes, for example, silicon oxide (e.g., SiO 2 ).

[0069] like Figure 2 As shown, the semiconductor device 110 may further include a second insulating component 42. The second insulating component 42 includes a first insulating portion 42a and a second insulating portion 42b. The first semiconductor portion 21 is provided between the fourth partial region r4 and the first insulating portion 42a in the third direction D3. The second semiconductor portion 22 is provided between the fifth partial region r5 and the second insulating portion 42b in the third direction D3. The second insulating component 42 includes at least one selected from the group consisting of oxygen and nitrogen, and silicon. The second insulating component 42 includes, for example, silicon nitride (e.g., SiN).

[0070] like Figure 2 as well as Figure 3 As shown, in this example, the semiconductor device 110 includes a substrate 10S and a nitride layer 10B. The nitride layer 10B is provided between the substrate 10S and the first semiconductor layer 10. The substrate 10S may be, for example, a silicon substrate. The nitride layer 10B may contain, for example, Al, Ga, and nitrogen. The nitride layer 10B is, for example, a buffer layer.

[0071] Figure 4 It is a schematic plan view illustrating the semiconductor device according to the first embodiment.

[0072] like Figure 4 As shown, in the semiconductor device 111 of the embodiment, the pattern of the thick first electrode portion 53a is different from that in the semiconductor device 110. The structure of the semiconductor device 111 other than this may be the same as that of the semiconductor device 110.

[0073] In the third electrode 53 in the semiconductor device 111, the width of the thick portion corresponding to the second region R2 in the second direction D2 is narrower than the width of the portion corresponding to the first region R1 in the second direction D2. In the embodiment, the patterns of the thick portion and the thin portion in the third electrode 53 can be variously changed.

[0074] (Second embodiment)

[0075] Figure 5 It is a schematic plan view illustrating a semiconductor device according to a second embodiment.

[0076] Figure 6 It is a schematic cross-sectional view illustrating a semiconductor device according to a second embodiment.

[0077] Figure 6 yes Figure 5 B1-B2 line profile.

[0078] like Figure 5 as well as Figure 6 As shown, the structure of the third electrode 53 in the semiconductor device 120 according to the embodiment is different from that in the semiconductor device 110. The structure of the semiconductor device 120 other than this may be the same as that of the semiconductor device 110.

[0079] In the semiconductor device 120, the third electrode 53 includes a sixth electrode portion 53f in addition to the first electrode portion 53a and the second electrode portion 53b. The second electrode portion 53b is disposed between the first electrode portion 53a and the sixth electrode portion 53f. The sixth electrode portion 53f is electrically connected to the second electrode portion 53b. A portion of the third semiconductor portion 23 is disposed between the sixth portion region r6 and the sixth electrode portion 53f in the third direction D3. The sixth electrode portion thickness t6 of the sixth electrode portion 53f along the third direction D3 is thicker than the second electrode portion thickness t2.

[0080] In the semiconductor device 120, the third electrode 53 may further include a seventh electrode portion 53g. The fourth electrode portion 53d is provided between the seventh electrode portion 53g and the first electrode portion 53a. The seventh electrode portion 53g is electrically connected to the fourth electrode portion 53d. A portion of the fourth semiconductor portion 24 is provided between the seventh portion region r7 and the seventh electrode portion 53g in the third direction D3. The seventh electrode portion thickness t7 of the seventh electrode portion 53g along the third direction D3 is thicker than the fourth electrode portion thickness t4.

[0081] In the semiconductor device 120 as well, by providing the thin second electrode portion 53b and the fourth electrode portion 53d, the high resistance region 10i can be stably formed, and the leakage path can be stably suppressed.

[0082] By providing the thick sixth electrode portion 53f and the seventh electrode portion 53g, for example, when wiring is provided via an insulating film on the third electrode 53, the connection between these electrode portions and the wiring becomes easy. For example, the resistance of the third electrode 53 is easily reduced. For example, more stable characteristics are easily obtained.

[0083] In the embodiment, information on the length and thickness is obtained by electron microscope observation, etc. Information on the composition of the material is obtained by SIMS (Secondary Ion Mass Spectrometry) or EDX (Energy Dispersive X-ray Spectroscopy), etc.

[0084] The implementation method may include the following technical solutions.

[0085] (Technical solution 1)

[0086] A semiconductor device comprising:

[0087] a first electrode extending along a first direction;

[0088] a second electrode extending along the first direction, wherein a second direction from the first electrode to the second electrode intersects the first direction;

[0089] a third electrode extending along the first direction, wherein a position of the third electrode in the second direction is between a position of the first electrode in the second direction and a position of the second electrode in the second direction, wherein the third electrode includes a first electrode portion and a second electrode portion, and the second electrode portion is electrically connected to the first electrode portion; and

[0090] Semiconductor components,

[0091] The semiconductor component comprises:

[0092] The first semiconductor layer comprises Al x1 Ga 1-x1 N (0≤x1<1); and

[0093] The second semiconductor layer comprises Al x2 Ga 1-x2 N(0 <x2≤1、x1<x2),

[0094] The first semiconductor layer includes a first partial region, a second partial region, a third partial region, a fourth partial region, a fifth partial region, a sixth partial region, and a seventh partial region,

[0095] The direction from the first partial region to the first electrode is along a third direction intersecting a plane including the first direction and the second direction.

[0096] The direction from the second partial region to the second electrode is along the third direction,

[0097] A direction from the third partial region to the first electrode portion is along the third direction,

[0098] The position of the fourth partial region in the second direction is between the position of the first partial region in the second direction and the position of the third partial region in the second direction.

[0099] The position of the fifth partial region in the second direction is between the position of the third partial region in the second direction and the position of the second partial region in the second direction.

[0100] The position of the third partial region in the first direction is between the position of the seventh partial region in the first direction and the position of the sixth partial region in the first direction.

[0101] The second semiconductor layer includes a first semiconductor portion, a second semiconductor portion, a third semiconductor portion, and a fourth semiconductor portion.

[0102] A direction from the fourth partial region to the first semiconductor portion is along the third direction,

[0103] A direction from the fifth partial region to the second semiconductor portion is along the third direction,

[0104] A direction from the sixth partial region to the third semiconductor portion is along the third direction,

[0105] From the seventh portion region to the fourth semiconductor portion along the third direction,

[0106] The third semiconductor portion is provided between the sixth partial region and the second electrode portion in the third direction,

[0107] At least a portion of the first electrode portion is located between the first semiconductor portion and the second semiconductor portion in the second direction.

[0108] The at least a portion of the first electrode portion is located between the fourth semiconductor portion and the third semiconductor portion in the first direction,

[0109] The thickness of the first electrode portion along the third direction of the first electrode portion is thicker than the thickness of the second electrode portion along the third direction of the second electrode portion.

[0110] The third electrode further includes a third electrode portion,

[0111] The third electrode portion is disposed between the first electrode portion and the second electrode portion,

[0112] The third electrode portion is electrically connected to the first electrode portion and the second electrode portion,

[0113] The third electrode portion is provided between the at least a portion of the first electrode portion and the third semiconductor portion,

[0114] The thickness of the first electrode portion is thicker than the thickness of the third electrode portion along the third direction.

[0115] (Technical Solution 2)

[0116] The semiconductor device according to claim 1, wherein:

[0117] At least a portion of the third electrode includes polycrystalline silicon.

[0118] (Technical Solution 3)

[0119] A semiconductor device comprising:

[0120] a first electrode extending along a first direction;

[0121] a second electrode extending along the first direction, wherein a second direction from the first electrode to the second electrode intersects the first direction;

[0122] a third electrode extending along the first direction, wherein a position of the third electrode in the second direction is between a position of the first electrode in the second direction and a position of the second electrode in the second direction, wherein the third electrode includes a first electrode portion and a second electrode portion, and the second electrode portion is electrically connected to the first electrode portion; and

[0123] Semiconductor components,

[0124] The semiconductor component comprises:

[0125] The first semiconductor layer comprises Al x1 Ga 1-x1 N (0≤x1<1); and

[0126] The second semiconductor layer comprises Al x2 Ga 1-x2 N(0 <x2≤1、x1<x2),

[0127] The first semiconductor layer includes a first partial region, a second partial region, a third partial region, a fourth partial region, a fifth partial region, a sixth partial region, and a seventh partial region.

[0128] The direction from the first partial region to the first electrode is along a third direction intersecting a plane including the first direction and the second direction.

[0129] The direction from the second partial region to the second electrode is along the third direction,

[0130] A direction from the third partial region to the first electrode portion is along the third direction,

[0131] The position of the fourth partial region in the second direction is between the position of the first partial region in the second direction and the position of the third partial region in the second direction.

[0132] The position of the fifth partial region in the second direction is between the position of the third partial region in the second direction and the position of the second partial region in the second direction.

[0133] The position of the third partial region in the first direction is between the position of the seventh partial region in the first direction and the position of the sixth partial region in the first direction.

[0134] The second semiconductor layer includes a first semiconductor portion, a second semiconductor portion, a third semiconductor portion, and a fourth semiconductor portion.

[0135] A direction from the fourth partial region to the first semiconductor portion is along the third direction,

[0136] A direction from the fifth partial region to the second semiconductor portion is along the third direction,

[0137] A direction from the sixth partial region to the third semiconductor portion is along the third direction,

[0138] From the seventh portion region to the fourth semiconductor portion along the third direction,

[0139] The third semiconductor portion is provided between the sixth partial region and the second electrode portion in the third direction,

[0140] At least a portion of the first electrode portion is located between the first semiconductor portion and the second semiconductor portion in the second direction.

[0141] The at least a portion of the first electrode portion is located between the fourth semiconductor portion and the third semiconductor portion in the first direction,

[0142] The thickness of the first electrode portion along the third direction of the first electrode portion is thicker than the thickness of the second electrode portion along the third direction of the second electrode portion.

[0143] At least a portion of the third electrode includes polycrystalline silicon.

[0144] (Technical Solution 4)

[0145] The semiconductor device according to any one of claims 1 to 3, wherein:

[0146] The first electrode portion includes polycrystalline silicon.

[0147] (Technical Solution 5)

[0148] The semiconductor device according to any one of technical solutions 1 to 4, wherein:

[0149] The crystallinity of the first semiconductor portion is higher than the crystallinity of at least a part of the third semiconductor portion, or

[0150] The first semiconductor portion includes crystals, and the at least a portion of the third semiconductor portion does not include crystals.

[0151] (Technical Solution 6)

[0152] The semiconductor device according to any one of technical solutions 1 to 4, wherein:

[0153] The third electrode further includes a fourth electrode portion,

[0154] The fourth electrode portion is electrically connected to the first electrode portion,

[0155] The fourth semiconductor portion is provided between the seventh portion region and the fourth electrode portion in the third direction,

[0156] The thickness of the first electrode portion is thicker than the thickness of the fourth electrode portion along the third direction.

[0157] (Technical Solution 7)

[0158] The semiconductor device according to claim 6, wherein:

[0159] The third electrode further includes a fifth electrode portion,

[0160] The fifth electrode portion is disposed between the fourth electrode portion and the first electrode portion,

[0161] The fifth electrode portion is electrically connected to the fourth electrode portion and the first electrode portion,

[0162] The fifth electrode portion is disposed between at least a part of the fourth semiconductor portion and the first electrode portion.

[0163] The thickness of the first electrode portion is thicker than the thickness of the fifth electrode portion along the third direction of the fifth electrode portion.

[0164] (Technical solution 8)

[0165] The semiconductor device according to technical solution 6 or 7, wherein

[0166] The crystallinity of the first semiconductor portion is higher than at least a part of the crystallinity of the fourth semiconductor portion, or

[0167] The first semiconductor portion contains crystals, and at least a part of the fourth semiconductor portion does not contain crystals.

[0168] (Technical solution 9)

[0169] The semiconductor device according to any one of technical solutions 6 to 8, wherein

[0170] The direction from at least a part of the fourth electrode portion to the first electrode portion is along the first direction.

[0171] (Technical solution 10)

[0172] The semiconductor device according to any one of technical solutions 1 to 9, wherein

[0173] The direction from the first electrode portion to at least a part of the second electrode portion is along the first direction.

[0174] (Technical solution 11)

[0175] The semiconductor device according to any one of technical solutions 1 to 10, wherein

[0176] It further includes a nitride component containing Al z1 Ga 1-z1 N (0 < z1 ≤ 1, x2 < z1),

[0177] The nitride component includes a first nitride region,

[0178] The first nitride region is disposed between the third partial region and the first electrode portion in the third direction.

[0179] (Technical solution 12)

[0180] The semiconductor device according to technical solution 11, wherein

[0181] further comprising a first insulating member,

[0182] The first insulating component includes a first insulating region,

[0183] The first insulating region is provided between the first nitride region and the first electrode portion,

[0184] The first insulating member includes at least one selected from the group consisting of oxygen and nitrogen, and silicon.

[0185] (Technical Solution 13)

[0186] The semiconductor device according to any one of technical solutions 1 to 12, wherein:

[0187] further comprising a second insulating member,

[0188] The second insulating component includes a first insulating portion and a second insulating portion,

[0189] The first semiconductor portion is provided between the fourth partial region and the first insulating portion in the third direction,

[0190] The second semiconductor portion is provided between the fifth portion region and the second insulating portion in the third direction,

[0191] The second insulating member includes at least one selected from the group consisting of oxygen and nitrogen, and silicon.

[0192] (Technical Solution 14)

[0193] The semiconductor device according to claim 1, wherein:

[0194] The third electrode further includes a sixth electrode portion,

[0195] The second electrode portion is disposed between the first electrode portion and the sixth electrode portion,

[0196] The sixth electrode portion is electrically connected to the second electrode portion,

[0197] The thickness of the sixth electrode portion along the third direction is thicker than the thickness of the second electrode portion.

[0198] (Technical Solution 15)

[0199] The semiconductor device according to claim 6, wherein:

[0200] The third electrode further includes a seventh electrode portion,

[0201] The fourth electrode portion is disposed between the seventh electrode portion and the first electrode portion,

[0202] The seventh electrode portion is electrically connected to the fourth electrode portion,

[0203] The thickness of the seventh electrode portion along the third direction is thicker than the thickness of the fourth electrode portion.

[0204] (Technical Solution 16)

[0205] The semiconductor device according to any one of technical solutions 1 to 15, wherein:

[0206] A first electrode portion length of the first electrode portion along the first direction is longer than a second electrode portion length of the second electrode portion along the first direction.

[0207] (Technical Solution 17)

[0208] The semiconductor device according to claim 1, wherein:

[0209] A first electrode portion length of the first electrode portion along the first direction is longer than a third electrode portion length of the third electrode portion along the first direction.

[0210] (Technical Solution 18)

[0211] The semiconductor device according to claim 1, wherein:

[0212] The crystallinity of the third partial region is higher than the crystallinity of at least a part of the sixth partial region, or,

[0213] The third partial region contains crystals, and the at least a portion of the sixth partial region does not contain crystals,

[0214] A position of a first boundary between the third partial region and the at least a portion of the sixth partial region in the first direction substantially coincides with a position of a second boundary between the first electrode portion and the third electrode portion in the first direction.

[0215] (Technical Solution 19)

[0216] The semiconductor device according to claim 1, wherein:

[0217] The crystallinity of the third partial region is higher than the crystallinity of at least a part of the sixth partial region, or,

[0218] The third partial region contains crystals, and the at least a portion of the sixth partial region does not contain crystals,

[0219] The position of the first boundary between the third partial region and at least a portion of the sixth partial region in the first direction is between the position of the second boundary between the first electrode portion and the third electrode portion in the first direction and the position of the third semiconductor portion in the first direction.

[0220] (Technical Solution 20)

[0221] The semiconductor device according to any one of technical solutions 1 to 19, wherein:

[0222] The thickness of the first electrode portion is 1.5 times or more the thickness of the second electrode portion.

[0223] (Technical Solution 21)

[0224] The semiconductor device according to technical solution 3, wherein:

[0225] The crystallinity of the third partial region is higher than the crystallinity of at least a part of the sixth partial region, or,

[0226] The third partial region contains crystals, and the at least a portion of the sixth partial region does not contain crystals,

[0227] A position of a first boundary between the third partial region and the at least a portion of the sixth partial region in the first direction substantially coincides with a position of a third boundary between the first electrode portion and the second electrode portion in the first direction.

[0228] (Third embodiment)

[0229] Figure 7 It is a schematic plan view illustrating a semiconductor device according to a third embodiment.

[0230] Figure 8 It is a schematic cross-sectional view illustrating a semiconductor device according to a third embodiment.

[0231] Figure 8 yes Figure 7 B1-B2 line profile.

[0232] like Figure 7 as well as Figure 8As shown, in the semiconductor device 130 according to the embodiment, the third electrode portion 53c and the fifth electrode portion 53e are omitted. The structure of the semiconductor device 130 other than this may be the same as that of the semiconductor device 110. In the semiconductor device 130, at least a portion of the third electrode 53 includes polysilicon. In the semiconductor device 130, for example, leakage current can also be effectively suppressed. According to the embodiment, a semiconductor device capable of improving characteristics can be provided.

[0233] like Figure 8 As shown, for example, the position of the first boundary BD1 between the third partial region r3 and at least a portion of the sixth partial region r6 in the first direction D1 can be substantially consistent with the position of the third boundary BD3 between the first electrode portion 53a and the second electrode portion 53b in the first direction D1.

[0234] Fig. 9 It is a schematic plan view illustrating a semiconductor device according to a third embodiment.

[0235] like Fig. 9 As shown, in the semiconductor device 131 according to the embodiment, the third electrode portion 53c and the fifth electrode portion 53e are also omitted. The structure of the semiconductor device 131 other than this may be the same as that of the semiconductor device 111. In the semiconductor device 131, at least a portion of the third electrode 53 includes polysilicon. In the semiconductor device 131, for example, leakage current can also be effectively suppressed. According to the embodiment, a semiconductor device with improved characteristics can be provided.

[0236] According to the embodiment, a semiconductor device having improved characteristics can be provided.

[0237] The above describes the embodiments of the present invention with reference to specific examples. However, the present invention is not limited to these specific examples. For example, as long as a person skilled in the art can appropriately select from the known range to implement the present invention in the same manner and obtain the same effect, the specific structure of each element such as a semiconductor layer, an electrode, and an insulating component included in the semiconductor device is included in the scope of the present invention.

[0238] Furthermore, any configuration obtained by combining any two or more elements of each specific example within a technically possible range is also included in the scope of the present invention as long as it includes the gist of the present invention.

[0239] In addition, according to the semiconductor device and the manufacturing method thereof described above as embodiments of the present invention, all semiconductor devices and the manufacturing methods thereof obtained by appropriately changing the design and implementing them by those skilled in the art also belong to the scope of the present invention as long as they include the gist of the present invention.

[0240] In addition, within the scope of the concept of the present invention, a person skilled in the art can conceive of various changes and modifications, and it is understood that these changes and modifications also belong to the scope of the present invention.

[0241] Although several embodiments of the present invention have been described, these embodiments are merely illustrative and are not intended to limit the scope of the invention. These new embodiments can be implemented in various other ways, and various omissions, substitutions, and changes can be made without departing from the gist of the invention. These embodiments and their variations are included in the scope and gist of the invention, and are included in the invention described in the claims and their equivalents.

Claims

1. A semiconductor device comprising: a first electrode extending along a first direction; a second electrode extending along the first direction, wherein a second direction from the first electrode to the second electrode intersects the first direction; a third electrode extending along the first direction, wherein the position of the third electrode in the second direction is between the position of the first electrode in the second direction and the position of the second electrode in the second direction, wherein the third electrode includes a first electrode portion and a second electrode portion, and the second electrode portion is electrically connected to the first electrode portion; as well as Semiconductor components, The semiconductor component comprises: The first semiconductor layer comprises Al x1 Ga 1-x1 N, where 0≤x1<1; and The second semiconductor layer comprises Al x2 Ga 1-x2 N, where 0 <x2≤1,x1<x2, The first semiconductor layer includes a first partial region, a second partial region, a third partial region, a fourth partial region, a fifth partial region, a sixth partial region, and a seventh partial region. The direction from the first partial region to the first electrode is along a third direction intersecting a plane including the first direction and the second direction. The direction from the second partial region to the second electrode is along the third direction, A direction from the third partial region to the first electrode portion is along the third direction, The position of the fourth partial region in the second direction is between the position of the first partial region in the second direction and the position of the third partial region in the second direction. The position of the fifth partial region in the second direction is between the position of the third partial region in the second direction and the position of the second partial region in the second direction. The position of the third partial region in the first direction is between the position of the seventh partial region in the first direction and the position of the sixth partial region in the first direction. The second semiconductor layer includes a first semiconductor portion, a second semiconductor portion, a third semiconductor portion, and a fourth semiconductor portion. A direction from the fourth partial region to the first semiconductor portion is along the third direction, A direction from the fifth partial region to the second semiconductor portion is along the third direction, A direction from the sixth partial region to the third semiconductor portion is along the third direction, From the seventh portion region to the fourth semiconductor portion along the third direction, The third semiconductor portion is provided between the sixth partial region and the second electrode portion in the third direction, At least a portion of the first electrode portion is located between the first semiconductor portion and the second semiconductor portion in the second direction. The at least a portion of the first electrode portion is located between the fourth semiconductor portion and the third semiconductor portion in the first direction, The thickness of the first electrode portion along the third direction of the first electrode portion is thicker than the thickness of the second electrode portion along the third direction of the second electrode portion. The third electrode further includes a third electrode portion, The third electrode portion is disposed between the first electrode portion and the second electrode portion, The third electrode portion is electrically connected to the first electrode portion and the second electrode portion, The third electrode portion is provided between the at least a portion of the first electrode portion and the third semiconductor portion, The thickness of the first electrode portion is thicker than the thickness of the third electrode portion along the third direction.

2. The semiconductor device according to claim 1, wherein At least a portion of the third electrode includes polycrystalline silicon.

3. A semiconductor device comprising: a first electrode extending along a first direction; a second electrode extending along the first direction, wherein a second direction from the first electrode to the second electrode intersects the first direction; a third electrode extending along the first direction, wherein the position of the third electrode in the second direction is between the position of the first electrode in the second direction and the position of the second electrode in the second direction, wherein the third electrode includes a first electrode portion and a second electrode portion, and the second electrode portion is electrically connected to the first electrode portion; as well as Semiconductor components, The semiconductor component comprises: The first semiconductor layer comprises Al x1 Ga 1-x1 N, where 0≤x1<1; and The second semiconductor layer comprises Al x2 Ga 1-x2 N, where 0 <x2≤1,x1<x2, The first semiconductor layer includes a first partial region, a second partial region, a third partial region, a fourth partial region, a fifth partial region, a sixth partial region, and a seventh partial region. The direction from the first partial region to the first electrode is along a third direction intersecting a plane including the first direction and the second direction. The direction from the second partial region to the second electrode is along the third direction, A direction from the third partial region to the first electrode portion is along the third direction, The position of the fourth partial region in the second direction is between the position of the first partial region in the second direction and the position of the third partial region in the second direction. The position of the fifth partial region in the second direction is between the position of the third partial region in the second direction and the position of the second partial region in the second direction. The position of the third partial region in the first direction is between the position of the seventh partial region in the first direction and the position of the sixth partial region in the first direction. The second semiconductor layer includes a first semiconductor portion, a second semiconductor portion, a third semiconductor portion, and a fourth semiconductor portion. A direction from the fourth partial region to the first semiconductor portion is along the third direction, A direction from the fifth partial region to the second semiconductor portion is along the third direction, A direction from the sixth partial region to the third semiconductor portion is along the third direction, From the seventh portion region to the fourth semiconductor portion along the third direction, The third semiconductor portion is provided between the sixth partial region and the second electrode portion in the third direction, At least a portion of the first electrode portion is located between the first semiconductor portion and the second semiconductor portion in the second direction. The at least a portion of the first electrode portion is located between the fourth semiconductor portion and the third semiconductor portion in the first direction, The thickness of the first electrode portion along the third direction of the first electrode portion is thicker than the thickness of the second electrode portion along the third direction of the second electrode portion. At least a portion of the third electrode includes polycrystalline silicon.

4. The semiconductor device according to claim 1, wherein The crystallinity of the first semiconductor portion is higher than the crystallinity of at least a part of the third semiconductor portion, or The first semiconductor portion includes crystals, and the at least a portion of the third semiconductor portion does not include crystals.

5. The semiconductor device according to claim 1, wherein The third electrode further includes a fourth electrode portion, The fourth electrode portion is electrically connected to the first electrode portion, The fourth semiconductor portion is provided between the seventh portion region and the fourth electrode portion in the third direction, The thickness of the first electrode portion is thicker than the thickness of the fourth electrode portion along the third direction.

6. The semiconductor device according to claim 5, wherein: The third electrode further includes a fifth electrode portion, The fifth electrode portion is disposed between the fourth electrode portion and the first electrode portion, The fifth electrode portion is electrically connected to the fourth electrode portion and the first electrode portion, The fifth electrode portion is provided between the fourth semiconductor portion and the at least a portion of the first electrode portion, The thickness of the first electrode portion is thicker than the thickness of the fifth electrode portion along the third direction.

7. The semiconductor device according to claim 5, wherein: The crystallinity of the first semiconductor portion is higher than the crystallinity of at least a part of the fourth semiconductor portion, or The first semiconductor portion includes crystals, and the at least a portion of the fourth semiconductor portion does not include crystals.

8. The semiconductor device according to claim 1, wherein A direction from the first electrode portion to at least a portion of the second electrode portion is along the first direction.

9. The semiconductor device according to claim 1, wherein: A first electrode portion length of the first electrode portion along the first direction is longer than a second electrode portion length of the second electrode portion along the first direction.

10. The semiconductor device according to claim 1, wherein The crystallinity of the third partial region is higher than the crystallinity of at least a part of the sixth partial region, or, The third partial region contains crystals, and the at least a portion of the sixth partial region does not contain crystals, A position of a first boundary between the third partial region and the at least a portion of the sixth partial region in the first direction substantially coincides with a position of a second boundary between the first electrode portion and the third electrode portion in the first direction.

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