OLED device structure with microcavity effect
By adopting new microcavity structures and processes in OLED devices, the problem of poor film thickness and surface roughness control in the prior art is solved, and precise control of the luminescence spectrum and improvement of the performance of OLED devices are achieved.
Patent Information
- Application Number
- CN202510454284.X
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-04-11
- Publication Date
- 2025-05-23
AI Technical Summary
The existing microcavity technology has poor control of film thickness and surface roughness, resulting in large differences in film thickness, affecting the color purity and brightness consistency of OLED devices.
Using a new microcavity structure, a microcavity adjustment layer is constructed through three metal anodes of different thicknesses. Combined with PR glue and wet glue removal process to reduce etching damage, and using CMP process to improve the flatness and surface roughness of the microcavity adjustment layer.
Accurate control of the luminescence spectrum is achieved, damage to the electrode surface is reduced, and the low roughness and high reflectivity are maintained, which improves the color purity and brightness consistency of OLED devices.
Smart Images
Figure CN120035311A_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to the field of semiconductor technology, and in particular to an OLED device structure with a microcavity effect. Background Art
[0002] The current mainstream technical solution for silicon-based OLED microdisplays is white light OLED luminescence, which produces RGB three colors through filters (CF) to achieve full-color display. The main problems of this technology are poor color purity, low color gamut, and large brightness loss due to the use of color filters. The microcavity effect can significantly improve the color purity of organic light-emitting diodes (OLEDs) by wavelength selection and narrowing the luminous spectrum. In addition, due to the narrowing of the luminous spectrum, the luminous intensity of different bands is improved, which can improve the luminous brightness. This invention proposes a microcavity anode structure and process flow to achieve the corresponding functions.
[0003] Existing technology uses ITO strong microcavity or SiO X The strong microcavity solution uses three different thicknesses of ITO or SiOx to adjust the luminescence spectrum and narrow the half-wave width. The existing microcavity technology uses an etching process, which causes a certain degree of damage to the electrode surface, especially the ITO or SiOx surface. The control of film thickness and surface roughness is poor, and the uniformity of coating and etching is high. The center die and edge die of the wafer are affected by multiple film-forming and etching processes, and the film thickness difference is large, which leads to large differences in color purity and brightness of different dies on the product. Summary of the invention
[0004] The invention discloses an OLED device structure with a microcavity effect, aiming to solve the technical problems in the background technology that the existing microcavity technology leads to poor control of film thickness and surface roughness and large difference in film thickness.
[0005] An OLED device structure with a microcavity effect proposed in the present invention comprises a silicon-based substrate and a metal connection layer located inside the silicon-based substrate, an insulating layer and a metal reflective anode are arranged above the silicon-based substrate, a pixel isolation structure, an OLED functional material layer, a cathode layer and a thin film encapsulation layer are arranged in sequence above the insulating layer and the metal reflective anode, a reaction component is arranged in the silicon-based substrate, and the reaction component comprises a plurality of equidistantly arranged heat pipes, and the plurality of heat pipes are all arranged between the metal connection layers.
[0006] In a preferred embodiment, a plurality of guide holes are provided at equal distances on the silicon-based substrate, a thermal conductive gel is provided in each of the plurality of guide holes, and a plurality of heat conductive tubes are provided in the corresponding guide holes, the outer walls of the plurality of heat conductive tubes are in contact with the thermal conductive gel, the inner walls of the plurality of heat conductive tubes are fixedly connected with a liquid wick, and a working liquid is provided inside each of the plurality of liquid wicks.
[0007] By providing a reaction component and opening a guide hole, the specific surface area of the silicon-based substrate can be increased, the volume expansion of silicon during operation can be alleviated, and stability can be improved; after working for a long time, heat is transferred to the inside of the heat pipe through the thermal conductive gel, and the working liquid absorbs the heat and evaporates and flows to the end away from the silicon-based substrate. After condensation, it circulates through the capillary action of the liquid absorption core, which can help reduce the heat generated by the OLED device due to long-term operation, extend the service life and maintain stable performance; the elasticity of the thermal conductive gel can buffer the stress caused by the different thermal expansion coefficients between the heat pipe and the silicon-based substrate, avoiding damage to components caused by thermal stress.
[0008] In a preferred embodiment, the silicon-based substrate is a bare silicon substrate.
[0009] In a preferred embodiment, the insulating layer comprises SiO 2 layer and a barrier layer, and the barrier layer is made of SiN X .
[0010] In a preferred solution, the order of the film layers of the metal reflective anode from bottom to top is Ti / TiN / Ag, and the metal reflective anode includes a first electrode, a second electrode and a third electrode, and the main film layers of the three electrode layers are made of Ag with different thicknesses.
[0011] By providing three electrode layers with different thicknesses of the main film layer, ITO microcavity layers with different thicknesses can be formed subsequently.
[0012] In a preferred solution, the microcavity adjustment layer is made of ITO, and the microcavity adjustment layer includes a first electrode microcavity adjustment layer, a second electrode microcavity adjustment layer and a third electrode microcavity adjustment layer, and the thicknesses of the three layers are different.
[0013] By providing three electrode microcavity adjustment layers with different thicknesses corresponding to the wavelengths of red, green and blue, respectively, precise control of the luminescence spectrum can be achieved.
[0014] In a preferred embodiment, the film material of the pixel isolation structure is Al 2 O 3 .
[0015] By providing a pixel isolation structure, electrical crosstalk between OLEDs can be blocked.
[0016] In a preferred embodiment, the OLED functional material layer includes HIL, HTL, EBL, EML, HBL, ETL, and EIL functional layers, and the material of the OLED functional material layer is a high-fluorescence OLED material.
[0017] In a preferred solution, the film material of the cathode layer is Mg.
[0018] In a preferred embodiment, the thin film encapsulation layer comprises Al 2 O 3 Thin films and TiO 2 film
[0019] It can be seen from the above that the OLED device structure with microcavity effect provided by the present invention has the following beneficial effects:
[0020] (1) The present invention provides a novel microcavity structure, which constructs three different microcavity adjustment layer thicknesses by using three metal anodes with different thicknesses;
[0021] (2) The anode structure does not require an etching process. Using PR glue as a mask and a wet degumming process can reduce damage to the electrode surface and maintain its low roughness and high reflectivity.
[0022] (3) The CMP process can effectively improve the flatness and surface roughness of the transparent conductive oxide (microcavity adjustment layer), reduce the contact resistance, and increase the carrier injection efficiency. BRIEF DESCRIPTION OF THE DRAWINGS
[0023] Figure 1 This is a schematic diagram of the overall structure of an OLED device with a microcavity effect proposed by the present invention;
[0024] Figure 2 This is a schematic front view of an OLED device structure with a microcavity effect proposed by the present invention;
[0025] Figure 3 A cross-sectional view of the internal structure of a heat-conducting pipe of an OLED device structure with a microcavity effect proposed by the present invention;
[0026] Figure 4 This is a process flow chart of an OLED device structure with a microcavity effect proposed by the present invention.
[0027] In the figure: 100, silicon-based substrate; 110, metal connection layer; 200, insulating layer; 210, SiO 2 layer; 220, barrier layer; 300, metal reflective anode; 310, first electrode; 320, second electrode; 330, third electrode; 400, microcavity adjustment layer; 410, first electrode microcavity adjustment layer; 420, second electrode microcavity adjustment layer; 430, third electrode microcavity adjustment layer; 500, pixel isolation structure; 600, OLED functional material layer; 700, cathode layer; 800, thin film encapsulation layer; 810, Al 2 O 3 Thin film; 820, TiO2 film; 900, reaction component; 910, heat pipe; 920, guide hole; 930, thermal conductive gel; 940, liquid wick; 950, working liquid. DETAILED DESCRIPTION
[0028] The technical solutions in the embodiments of the present invention will be described clearly and completely below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, rather than all the embodiments.
[0029] An OLED device structure with a microcavity effect disclosed in the present invention is mainly used in scenarios where the existing microcavity technology leads to poor control of film thickness and surface roughness and large differences in film thickness.
[0030] Reference Figure 1-4 , an OLED device structure with a microcavity effect, comprising a silicon-based substrate 100 and a metal connection layer 110 located inside the silicon-based substrate 100, and an insulating layer 200 and a metal reflective anode 300 are arranged above the silicon-based substrate 100, and a pixel isolation structure 500, an OLED functional material layer 600, a cathode layer 700 and a thin film encapsulation layer 800 are arranged in sequence above the insulating layer 200 and the metal reflective anode 300, a reaction component 900 is arranged in the silicon-based substrate 100, and the reaction component 900 includes a plurality of equidistantly arranged heat pipes 910, and the plurality of heat pipes 910 are all arranged between the metal connection layers 110.
[0031] Reference Figure 1 , Figure 2 and Figure 3 A plurality of guide holes 920 are provided at equal intervals on the silicon-based substrate 100, a thermal conductive gel 930 is provided in each of the plurality of guide holes 920, and a plurality of heat conductive pipes 910 are provided in corresponding guide holes 920, outer walls of the plurality of heat conductive pipes 910 are in contact with the thermal conductive gel 930, inner walls of the plurality of heat conductive pipes 910 are fixedly connected with a liquid wick 940, and working liquid 950 is provided inside the plurality of liquid wicks 940.
[0032] In a specific application scenario, by opening the guide hole 920, the specific surface area of the silicon-based substrate 100 can be increased, the volume expansion of silicon during operation can be alleviated, and the stability can be improved; after working for a long time, heat is transmitted to the inside of the heat pipe 910 through the thermal conductive gel 940, and the working liquid 950 absorbs the heat, evaporates and flows to the end away from the silicon-based substrate 100, and condenses and circulates through the capillary action of the liquid wick 940, which can help reduce the heat generated by the OLED device due to long-term operation, extend the service life and maintain stable performance; the elasticity of the thermal conductive gel 930 can buffer the stress caused by the different thermal expansion coefficients between the heat pipe 910 and the silicon-based substrate 100, thereby avoiding damage to components caused by thermal stress.
[0033] Reference Figure 1 , Figure 2 and Figure 3 , the silicon-based substrate 100 is a bare silicon substrate.
[0034] Reference Figure 1 , Figure 2 and Figure 3 , the insulating layer 200 includes SiO 2 layer 210 and a barrier layer 220, and the barrier layer 220 is made of SiN X .
[0035] Reference Figure 1 , Figure 2 and Figure 3 The metal reflective anode 300 has a film material sequence of Ti / TiN / Ag from bottom to top, and the metal reflective anode 300 includes a first electrode 310, a second electrode 320 and a third electrode 330, and the main film materials of the three electrode layers are Ag with different thicknesses.
[0036] In a specific application scenario, by providing three electrode layers with different thicknesses of the main film layer, ITO microcavity layers with different thicknesses can be formed subsequently.
[0037] Reference Figure 1 , Figure 2 and Figure 3 The material of the microcavity adjustment layer 400 is ITO, and the microcavity adjustment layer 400 includes a first electrode microcavity adjustment layer 410, a second electrode microcavity adjustment layer 420 and a third electrode microcavity adjustment layer 430, and the thickness of the three layers is different.
[0038] In a specific application scenario, precise control of the luminescence spectrum can be achieved by providing three electrode microcavity adjustment layers with different thicknesses corresponding to the wavelengths of red, green and blue, respectively.
[0039] Reference Figure 1 , Figure 2 and Figure 3 The film material of the pixel isolation structure 500 is Al 2 O 3 .
[0040] In a specific application scenario, the pixel isolation structure 500 can be provided to block electrical crosstalk between OLEDs.
[0041] Reference Figure 1 , Figure 2 and Figure 3 The OLED functional material layer 700 includes HIL, HTL, EBL, EML, HBL, ETL, and EIL functional layers, and the material of the OLED functional material layer 700 is a high-fluorescence OLED material.
[0042] Reference Figure 1 , Figure 2 and Figure 3 , the film material of the cathode layer 700 is Mg.
[0043] Reference Figure 1 , Figure 2 and Figure 3 The thin film encapsulation layer 800 includes Al 2 O 3 Thin Film 510 and TiO 2 Film 820.
[0044] A process flow for preparing an OLED device structure with a microcavity effect is as follows:
[0045] Step 1: 210 and 220 are continuously deposited on the silicon-based backplane by PECVD, ALD or PVD method, and then an isolation structure of an insulating layer is formed by coating → exposure → development → etching;
[0046] Step 2, depositing a 310 film layer by sputtering or electron beam evaporation;
[0047] Step 3, forming a photoresist pattern on the first electrode layer by using a photolithography process, and depositing Al or Ag by sputtering or electron beam evaporation to form a 320 film layer;
[0048] Step 4, removing the photoresist above the first electrode and the metal film layer deposited on the photoresist by a wet photoresist stripping process;
[0049] Step 5: forming a photoresist pattern on the first and second electrode layers by using a photolithography process, and depositing Al or Ag by sputtering or electron beam evaporation to form a 330 film layer;
[0050] Step 6: removing the photoresist above the first and second electrodes and the metal film layer deposited on the photoresist by a wet photoresist stripping process;
[0051] Step 7: Deposit 400 layers of film by sputtering or electron beam evaporation, and the thickness of the film layer is required to fill the depth of different electrode layers;
[0052] Step 8: Grind away the excess metal and transparent conductive oxide layers by chemical mechanical polishing (CMP), with 220 layers being the polishing control end point to form a planarized anode structure;
[0053] Step 9, through coating → gluing → exposure → development → etching, 500 is formed as a pixel isolation structure;
[0054] Step 10: forming 600 by evaporation, forming 700 by evaporation or sputtering, and forming 800 by CVD, ALD or IJP.
[0055] The above description is only a preferred specific implementation manner of the present invention, but the protection scope of the present invention is not limited thereto. Any technician familiar with the technical field can make equivalent replacements or changes according to the technical scheme and inventive concept of the present invention within the technical scope disclosed by the present invention, which should be covered by the protection scope of the present invention.
Claims
1. An OLED device structure with microcavity effect, characterized in that: include: A silicon-based substrate (100) and a metal connection layer (110) located inside the silicon-based substrate (100); an insulating layer (200) and a metal reflective anode (300) are arranged above the silicon-based substrate (100); a pixel isolation structure (500), an OLED functional material layer (600), a cathode layer (700) and a thin film encapsulation layer (800) are arranged in sequence above the insulating layer (200) and the metal reflective anode (300); a reaction component (900) is arranged inside the silicon-based substrate (100); and the reaction component (900) includes a plurality of heat pipes (910) arranged at equal distances; and the plurality of heat pipes (910) are all arranged between the metal connection layers (110).
2. The OLED device structure with microcavity effect according to claim 1, characterized in that: The silicon-based substrate (100) is provided with a plurality of guide holes (920) at equal distances, each of the plurality of guide holes (920) is provided with a heat-conducting gel (930), and each of the plurality of heat-conducting pipes (910) is provided in a corresponding guide hole (920), the outer walls of each of the plurality of heat-conducting pipes (910) are in contact with the heat-conducting gel (930), the inner walls of each of the plurality of heat-conducting pipes (910) are fixedly connected with a liquid wick (940), and each of the plurality of liquid wicks (940) is provided with a working liquid (950).
3. The OLED device structure with microcavity effect according to claim 1, characterized in that: The silicon-based substrate (100) is a bare silicon substrate.
4. The OLED device structure with microcavity effect according to claim 1, characterized in that: The insulating layer (200) comprises a SiO2 layer (210) and a barrier layer (220), and the barrier layer (220) is made of SiN X .
5. The OLED device structure with microcavity effect according to claim 1, characterized in that: The metal reflective anode (300) has a film layer material sequence of Ti / TiN / Ag from bottom to top, and the metal reflective anode (300) comprises a first electrode (310), a second electrode (320) and a third electrode (330), and the main film layers of the three electrode layers are made of Ag with different thicknesses.
6. The OLED device structure with microcavity effect according to claim 1, characterized in that: The material of the microcavity adjustment layer (400) is ITO, and the microcavity adjustment layer (400) comprises a first electrode microcavity adjustment layer (410), a second electrode microcavity adjustment layer (420) and a third electrode microcavity adjustment layer (430), and the thickness of the three layers are different.
7. The OLED device structure with microcavity effect according to claim 1, characterized in that: The film layer material of the pixel isolation structure (500) is Al2O3.
8. The OLED device structure with microcavity effect according to claim 1, characterized in that: The OLED functional material layer (700) comprises HIL, HTL, EBL, EML, HBL, ETL and EIL functional layers, and the material of the OLED functional material layer (700) is a high-fluorescence OLED material.
9. The OLED device structure with microcavity effect according to claim 1, characterized in that: The film material of the cathode layer (700) is Mg.
10. The OLED device structure with microcavity effect according to claim 1, characterized in that: The thin film encapsulation layer (800) includes an Al2O3 thin film (510) and a TiO2 thin film (820).