TRIAC device with high anti-noise capability

Abstract

The invention discloses a TRIAC device with high anti-noise capability. A semiconductor device apparatus, structure, and associated methods. The apparatus includes a first silicon layer, a second silicon layer, and a third silicon layer, the first silicon layer being coupled to the second silicon layer, and the second silicon layer being coupled to the third silicon layer. The apparatus also includes a first main terminal and a gate terminal coupled to the first silicon layer, a second main terminal coupled to the third silicon layer, and one or more silicon regions in the first silicon layer and the third silicon layer, wherein a gate silicon region in the one or more silicon regions is configured to cover the entire gate terminal.

Description

Technical Field

[0001] The present disclosure relates generally to the field of solid-state current control devices and, in particular, to thyristor devices and, more particularly, to triode for alternating current (TRIAC) devices. Background Art

[0002] Modern electronic devices rely on semiconductor device diodes to achieve various functions, for example, including conducting current in all directions. Such devices are manufactured using n-type and p-type semiconductor materials, and may include thyristor semiconductor devices, such as, for example, TRIAC semiconductor devices and / or any other type of device. During the manufacture of such devices, a semiconductor substrate having a first type of conductivity is exposed to an implantation, diffusion or deposition of a second type of substance, including epitaxial growth of a layer having a second type of substance. After providing the second type of substance, annealing may be performed to diffuse and activate the second conductivity type of substance. Existing TRIAC semiconductor devices include a single gate that provides a single gate control for triggering current conduction in all quadrants of the TRIAC semiconductor device. However, such devices suffer from high noise and operational defects. Summary of the invention

[0003] The following Summary is provided to introduce a selection of concepts in a simplified form that are further described below in the Detailed Description. This Summary is not intended to identify key or essential features of the claimed subject matter, nor is it intended to be an aid in determining the scope of the claimed subject matter.

[0004] In some embodiments, the present subject matter relates to a semiconductor device apparatus. The apparatus may include a first silicon layer, a second silicon layer, and a third silicon layer, the first silicon layer being coupled to the second silicon layer, and the second silicon layer being coupled to the third silicon layer. The apparatus may also include a first main terminal and a gate terminal coupled to the first silicon layer, a second main terminal coupled to the third silicon layer, and one or more silicon regions formed in the first silicon layer and the third silicon layer, wherein a gate silicon region in the one or more silicon regions is configured to cover the entire gate terminal.

[0005] In some embodiments, the present subject matter may include one or more of the following optional features. At least one of the first silicon layer, the second silicon layer, and the third silicon layer may be at least one of the following: an n-type layer, a p-type layer, and any combination thereof. The first silicon layer and the third silicon layer may be n-type layers, and the second silicon layer may be a p-type layer. Alternatively or in addition, the first silicon layer and the third silicon layer may be p-type layers, and the second silicon layer may be an n-type layer. One or more silicon regions may be n-type regions.

[0006] In some embodiments, the length of the gate silicon region can be greater than the length of the gate terminal. The gate silicon region can be heavily doped with a dopant. The dopant can include at least one of: boron, arsenic, phosphorus, and any combination thereof. The gate silicon region can be configured to prevent the occurrence of a small gate current.

[0007] In some embodiments, the first main terminal and the gate terminal can each be coupled to at least one region of the one or more regions. The first main terminal can be coupled to multiple regions of the one or more regions. The second main terminal can also be coupled to multiple regions of the one or more regions.

[0008] In some embodiments, the apparatus may be a semiconductor device. The semiconductor device may be a thyristor. The semiconductor device may be a TRIAC semiconductor device.

[0009] In some embodiments, the present subject matter relates to a method for manufacturing a semiconductor device. The method may include providing a first silicon layer, a second silicon layer, and a third silicon layer; coupling the first silicon layer to the second silicon layer, and coupling the second silicon layer to the third silicon layer; coupling a first main terminal and a gate terminal to the first silicon layer, and coupling the second main terminal to the third silicon layer; and forming one or more regions in the first silicon layer and the third silicon layer, wherein a gate silicon region in the one or more silicon regions is configured to cover the entire gate terminal.

[0010] The details of one or more variations of the subject matter described herein are set forth in the following drawings and the description. Other features and advantages of the subject matter described herein will be apparent from the description and drawings, and from the claims. BRIEF DESCRIPTION OF THE DRAWINGS

[0011] The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate certain aspects of the subject matter disclosed herein and, together with the description, help explain some principles associated with the disclosed embodiments.

[0012] Figure 1 An exemplary semiconductor device is shown;

[0013] Figure 2 An exemplary semiconductor device is shown;

[0014] Figure 3 illustrates an exemplary semiconductor device according to some implementations of the current subject matter; and

[0015] Figure 4 Four combinations of trigger voltages across the gate terminal and the MT2 terminal relative to the MT1 terminal are shown;

[0016] Figure 5 shows the dv / dt parameter vs. I gt2Example curves for parameters; and

[0017] Figure 6 An exemplary process according to some implementations of the current subject matter is shown.

[0018] The drawings are not necessarily drawn to scale. The drawings are merely representations and are not intended to depict specific parameters of the present disclosure. The drawings are intended to depict exemplary embodiments of the present subject matter and therefore should not be considered limiting in scope. In the drawings, like numbers represent like elements.

[0019] Furthermore, for clarity of illustration, certain elements in some of the figures may be omitted and / or not shown to scale. The cross-sectional views may be in the form of "slice" and / or "close-up" cross-sectional views, with certain background lines that would otherwise be visible in a "true" cross-sectional view omitted for clarity of illustration. Furthermore, for clarity, some reference numerals may be omitted in certain figures. DETAILED DESCRIPTION

[0020] Various methods according to the present disclosure will now be described more fully below with reference to the accompanying drawings, in which embodiments of the systems and methods are shown. Devices, systems, components, etc. may be embodied in many different forms and should not be construed as limited to the example embodiments set forth herein. Rather, these example embodiments are provided so that this disclosure will be thorough and complete and will fully convey the scope of the current subject matter to those skilled in the art.

[0021] To address these and potential other deficiencies of currently available solutions, one or more embodiments of the present subject matter are directed to methods, systems, articles of manufacture, and the like that can provide, among other possible advantages, solid-state current control devices, and particularly thyristor devices, and more particularly triode transistor for alternating current (TRIAC) devices having high noise immunity.

[0022] A current controlled device, such as, for example, a thyristor, refers to a solid-state semiconductor device having four layers of alternating p-type and n-type materials. In some cases, thyristors are used in high power applications as bistable switches that are configured to conduct current when the gate of the thyristor receives a current trigger, and to continue conducting until the voltage across the device is reverse biased, or until the voltage is no longer applied. Thyristors are commonly used in two-lead and three-lead configurations. In the two-lead configuration, current is conducted when the potential difference between the anode and cathode terminals is large enough (i.e., equal to the breakdown voltage). In the three-lead configuration, a small current on the gate terminal of the thyristor controls the current between the anode and cathode (a larger current).

[0023] TRIAC is a type of thyristor. They allow current to flow in both directions (e.g., anode to cathode and cathode to anode), unlike another type of thyristor – silicon controlled rectifier (SCR). TRIAC can be triggered by applying a positive or negative voltage to the gate terminal of the TRIAC, and can continue to conduct current even if the current at the gate terminal is no longer present until the main current drops below the holding current.

[0024] Figure 1 An exemplary semiconductor device 100 is shown. Semiconductor device 100 may be a TRIAC device and may include a p-type layer 102, an n-type layer 104, and a p-type layer 106. Layer 102 may be configured to include a first n-type region 103 and a second n-type region 105. Similarly, layer 106 may be configured to include a third n-type region 107. Device 100 also includes a first main terminal (MT1) or anode 1 (used interchangeably herein) 108, a gate terminal 110, and a second main terminal (MT2) or anode 2 (used interchangeably herein) 112. The first main terminal (MT1) 108 is coupled to a portion of layer 102 and a portion of the second n-type region 105. The gate terminal 110 is coupled to another portion of layer 102 and a portion of the first n-type region 103. The second main terminal (MT2) 112 is coupled to a portion of layer 106 and a portion of the third n-type region 107.

[0025] The device 100 operates using one of four combinations or quadrants of trigger voltages across the gate 110 and MT2 112 terminals relative to the MT1 108 terminals. In a first combination, the gate 110 and MT2 112 are positive relative to MT1 108; in a second combination, the gate 110 is negative relative to MT1 108 and MT2 112 is positive relative to MT1 108; in a third combination, the gate 110 and MT2 112 are negative relative to MT1 108; and in a fourth combination, the gate 110 is positive relative to MT1 108 and MT2 is negative relative to MT1 108.

[0026] In the first and second combinations, since MT2 112 is positive, current flows from MT2 112 to MT1 108 through p-type layer 106, n-type layer 104, p-type layer 102, and n-type region 105. N-type region 107 in p-type layer 106 and attached to MT2 112 is not involved.

[0027] In the third and fourth combinations, since MT2 112 is negative, current flows from MT1 108 to MT2 112 through p-type layer 102, n-type region 103, n-type layer 104, and p-type layer 106. The n-type region 107 in the p-type layer 106 and attached to MT2 112 is active. The n-type region 105 in the p-type layer 102 and attached to MT1 108 participates only in the initial triggering and does not participate in the main current flow.

[0028] It should be noted that for most embodiments of the TRIAC, the first and third combinations are typical operating modes because the gate current comes from MT2 112 (gate 110 and MT2 112 are both positive or negative relative to MT1 108). Other TRIAC embodiments include unipolar triggering from an external circuit (e.g., an integrated circuit, a digital drive circuit, etc.) and therefore involve the second and third embodiments, i.e., MT1 108 is connected to a positive voltage and gate 110 is connected to ground.

[0029] Figure 2 An exemplary TRIAC semiconductor device 200 is shown. Device 200 includes a p-type layer 202, an n-type layer 204, and a p-type layer 206. P-type layer 202 may include a plurality of n-type regions (e.g., N+ regions), such as, for example, a first n-type region 201, a second n-type region 203, a third n-type region 205, and a fourth n-type region 207. Similarly, layer 206 may also include a plurality of n-type regions, such as, for example, a fifth n-type region 209, a sixth n-type region 211, and a seventh n-type region 213.

[0030] Device 200 also includes a first main terminal (MT1) or anode 1 (used interchangeably herein) 208, a gate terminal 210, and a second main terminal (MT2) or anode 2 (used interchangeably herein) 212. MT1 208 is coupled to a portion of p-type layer 202 and is coupled across several n-type regions (particularly n-type region 201, n-type region 203, and n-type region 205). Figure 2 As shown, MT1 208 is coupled to a portion of n-type region 205 , while n-type regions 201 and 203 are fully coupled to MT1 208 .

[0031] Gate terminal 210 is coupled to another portion of p-type layer 202 and to a portion of n-type region 207. MT2 212 is coupled to p-type layer 206 and to n-type regions, and in particular n-type region 209, n-type region 211, and n-type region 213. The positioning and number of n-type regions in each of the respective layers 202 and 206 may depend on the specific application and / or expected performance characteristics of device 200.

[0032] Similar to Figure 1 , device 200 operates using one of four combinations of trigger voltages across gate 210 and MT2 212 relative to MT1 208. The combinations are as follows: gate 210 and MT212 are positive; gate 210 is negative and MT2 212 is positive; gate 210 and MT2 212 are negative; and gate 210 is positive and MT2 is negative.

[0033] In the first two combinations, since MT2 212 is positive, current flows from MT2 212 to MT1 208 through p-type layer 206, n-type layer 204, p-type layer 202, and one or more of n-type regions 201-205. One or more of n-type regions 209-213 in layer 206 and attached to MT2 212 may not be involved. In the last two combinations, MT2 212 is negative, and current flows from MT1 208 to MT2 212 through p-type layer 202, n-type region 207, n-type layer 204, and p-type layer 206. One or more of n-type regions 209-213 in p-type layer 206 and attached to MT2 212 become active. One or more of n-type regions 201-207 in p-type layer 202 and attached to MT1 208 may be involved during the initial stage, but are not involved in the main current flow.

[0034] Figure 3 An exemplary semiconductor device 300 is shown in accordance with some implementations of the current subject matter. Device 300 may be a TRIAC device and / or any other type of thyristor.

[0035] In some embodiments, the device 300 can be configured to include a heavily doped region (e.g., an N+ region) that can cover the entire gate (G) terminal. One of the benefits of the device 300 can include substantially eliminating the ineffective current between one of the main terminals (e.g., the MT1 terminal) and the gate terminal. In addition, during the second quadrant operation and third quadrant operation (as discussed above) of existing TRIAC devices characterized by negative gate bias, a small gate current can forward bias the emitter junction and thereby initiate electron injection. This in turn can trigger a positive feedback mechanism generated by two coupled bipolar transistors within the TRIAC structure. By using a heavily doped gate region, the structure of the device 300 of the current subject matter can be configured to reduce the N+PN gain and improve the static dv / dt ratio, thereby making the device 300 more resistant to noise.

[0036] like Figure 3As shown, the example TRIAC semiconductor device 300 may include a p-type layer 302, an n-type (e.g., n) layer 304, and a p-type layer 306. The p-type layer 302 may include a plurality of n-type regions (e.g., N+ regions), such as, for example, a first n-type region 301, a second n-type region 303, a third n-type region 305, and a fourth n-type region 307. Similarly, the layer 306 may also include a plurality of n-type regions, such as, for example, a fifth n-type region 309, a sixth n-type region 311, and a seventh n-type region 313.

[0037] The device 300 may also include a first main terminal (MT1) or anode 1 (used interchangeably herein) 308, a gate terminal 310, and a second main terminal (MT2) or anode 2 (used interchangeably herein) 312. The terminal MT1 308 may be coupled to a portion of the p-type layer 302 and one or more of the n-type regions (e.g., n-type region 301, n-type region 303, and n-type region 305). Figure 3 As shown, MT1 terminal 308 may be coupled to a portion of n-type region 305 , while n-type regions 301 and 303 are fully coupled to MT1 308 .

[0038] In some embodiments, the gate terminal 310 can be coupled to another portion of the p-type layer 302 and the entire n-type region 307. In particular, the length of the n-type region 307 can be configured to extend beyond the length of the gate terminal 310. In addition, the n-type region 307 can be heavily doped with a predetermined dopant (e.g., boron, arsenic, phosphorus, and / or any other desired material). Therefore, the coverage and heavy doping of the n-type region 307 can be configured to prevent the occurrence of a small gate current that forward biases the emitter junction in a conventional device, thereby causing positive feedback by the two coupled bipolar transistors coupled in the TRIAC.

[0039] like Figure 3 As shown, MT2 terminal 312 may be coupled to p-type layer 306 and one or more n-type regions, such as n-type regions 309, 311, 313. The positioning and number of n-type regions in each of respective layers 302 and 306 may depend on the specific application and / or expected performance characteristics of device 300.

[0040] Similar to Figure 1 , the device 300 can be operated using two combinations of trigger voltages across the gate 310 and MT2 312 relative to MT1 308. These two combinations are Figure 4 The combinations may be as follows: quadrant QII 404 - gate terminal 310 is negative, and MT2 terminal 312 is positive; quadrant QIII 406 - gate 310 and MT2 312 terminals are negative.

[0041] In the QII quadrant, since the MT2 terminal 312 is positive, current flows from the MT2 terminal 312 to the MT1 terminal 308 through the layer 306, the layer 304, the layer 302, and one or more of the regions 301-305. In addition, the regions 309-313 in the layer 306 may not be involved. In the QIII quadrant, the MT2 terminal 112 is negative, and current flows from the MT1 terminal 308 to the MT2 terminal 312 through the layer 302, the heavily doped n-type region 307, the layer 304, and the layer 306. One or more of the n-type regions 309-313 may become active. The geometry of the n-type region 307 and its specific positioning below the gate terminal 310 may be configured to provide protection against noise immunity by preventing the occurrence of gate current.

[0042] Figure 5 shows the dv / dt parameter vs. I gt2 Example curves 502 and 504 of parameters. Curve 502 represents the performance of a conventional TRIAC device, and curve 504 represents Figure 3 The performance of the TRIAC device 300 of the present subject matter is shown in FIG. The dv / dt parameter corresponds to the critical rate of rise of the off-state voltage, which is the minimum value of the rate of rise of the main voltage that will cause the device to switch from the off-state to the on-state. gt2 The parameter represents the trigger gate current, which corresponds to the minimum gate current required to maintain the device in the on state. This parameter also defines the sensitivity of the TRIAC. As can be seen from curve 504, the performance of the device 300 of the current subject matter is significantly higher than that of existing TRIAC devices because its dv / dt parameter is significantly higher (e.g., up to 3 times higher) than that of conventional TRIAC devices.

[0043] Figure 6 An exemplary process 600 for fabricating a semiconductor device according to some embodiments of the current subject matter is shown. The process 600 may be used to fabricate a semiconductor device. Figure 3 Device 300 shown in FIG. In some exemplary, non-limiting implementations, process 600 may be used to manufacture a thyristor, such as, for example, a TRIAC semiconductor device.

[0044] At 602, a first silicon layer (e.g., p-type layer 302), a second silicon layer (e.g., n-type layer 304), and a third silicon layer (e.g., p-type layer 306) may be provided. For example, the first silicon layer, the second silicon layer, and the third silicon layer may be p-type layers, n-type layers, and / or any other type of layers.

[0045] At 604, the first silicon layer may be coupled to the second silicon layer, and the second silicon layer may be coupled to the third silicon layer. The coupling of the silicon layers may be accomplished using any known technique. Figure 3As shown, layer 302 may be coupled to layer 304 , and layer 304 may be coupled to 306 , in no particular order.

[0046] At 606, a first main terminal (e.g., MT1 terminal 308) can be coupled to a first silicon layer (e.g., layer 302). A gate terminal (e.g., gate terminal 310) can be coupled to the first silicon layer. Additionally, a second main terminal (e.g., MT2 terminal 312) can be coupled to a third silicon layer (e.g., layer 306).

[0047] At 608 and 610, one or more first regions may be formed in the first silicon layer, and one or more second regions may be formed in the third silicon layer. Figure 3 As shown, n-type regions 301-305 can be formed in the first silicon layer and coupled to MT1 terminal 308. N-type region 307 or gate silicon region can be formed in the first silicon layer and coupled to gate terminal 310, wherein N-type region 307 can be doped with a dopant. Region 307 can be configured to have a length greater than the length of the gate terminal and can be further configured to cover the entire gate terminal. In addition, as shown Figure 3 As shown, n-type regions 309 - 313 may be formed in the third silicon layer 306 .

[0048] The components and features of the above devices may be implemented using any combination of discrete circuits, application specific integrated circuits (ASICs), logic gates, and / or single chip architectures. In addition, where appropriate, the features of the devices may be implemented using a microcontroller, a programmable logic array, and / or a microprocessor, or any combination of the foregoing. It should be noted that hardware, firmware, and / or software elements may be collectively or individually referred to herein as "logic" or "circuitry."

[0049] It will be appreciated that the exemplary devices shown in the above block diagrams may represent a functional descriptive example of many potential implementations. Therefore, the division, omission or inclusion of block functions depicted in the drawings does not infer that the hardware components, circuits, software and / or elements used to implement these functions will necessarily be divided, omitted or included in the embodiments.

[0050] Some embodiments may be described using the expression "one embodiment" or "an embodiment" along with their derivatives. These terms mean that a particular feature, structure, or characteristic described in conjunction with the embodiment is included in at least one embodiment. The appearance of the phrase "in one embodiment" (or its derivatives) in various places in the specification does not necessarily refer to the same embodiment. In addition, unless otherwise stated, the features described above are considered to be usable together in any combination. Therefore, any features discussed separately can be adopted in combination with each other, unless it is noted that these features are incompatible with each other.

[0051] It should be emphasized that the abstract of the present disclosure is provided to allow readers to quickly determine the nature of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims. In addition, in the above detailed description, it can be seen that various features are grouped together in a single embodiment for the purpose of simplifying the present disclosure. The disclosure method should not be interpreted as reflecting the intention that the claimed embodiment requires more features than those explicitly stated in each claim. On the contrary, as reflected in the following claims, the subject matter of the present invention lies in less than all the features of a single disclosed embodiment. Therefore, the following claims are incorporated into the detailed description, wherein each claim exists independently as a separate embodiment. In the attached claims, the terms "including" and "wherein" are used as the plain English equivalents of the corresponding terms "including" and "wherein", respectively. In addition, the terms "first", "second" and "third" and the like are used only as labels and are not intended to impose numerical requirements on their objects. In addition, the use of "including", "including" or "having" and its variants herein is intended to cover the items listed below and their equivalents and additional items. Thus, the terms "including," "comprising," or "having" and variations thereof are open-ended expressions and may be used interchangeably herein.

[0052] For convenience and clarity, terms such as "top," "bottom," "upper," "lower," "vertical," "horizontal," "lateral," "transverse," "radial," "inner," "outer," "left," and "right" may be used herein to describe the relative placement and orientation of features and components, each relative to the geometry and orientation of other features and components appearing in the perspective, exploded perspective, and cross-sectional views provided herein. The terminology is not intended to be limiting and includes the words specifically mentioned, derivatives thereof, and words of similar meaning.

[0053] The foregoing includes examples of the disclosed architecture. Of course, it is not possible to describe every conceivable combination of components and / or methods, but one of ordinary skill in the art may recognize that many further combinations and permutations are possible. Therefore, the novel architecture is intended to embrace all such changes, modifications, and variations that fall within the spirit and scope of the appended claims.

[0054] The foregoing description of example embodiments is presented for purposes of illustration and description. It is not intended to be exhaustive or to limit the disclosure to the precise form disclosed. Many modifications and variations are possible in light of the present disclosure. It is intended that the scope of the present disclosure is not limited by this specific embodiment, but rather by the claims appended hereto. Future applications claiming priority to the present application may claim the disclosed subject matter in different ways, and may generally include any set of one or more limitations as variously disclosed or otherwise presented herein.

[0055] All directional references (e.g., proximal, distal, upper, lower, upward, downward, left, right, transverse, longitudinal, front, rear, top, bottom, above, below, vertical, horizontal, radial, axial, clockwise, and counterclockwise) are used for identification purposes only to assist the reader in understanding the present disclosure and do not create limitations, particularly with respect to the position, orientation, or use of the present disclosure. Connection references (e.g., attach, couple, connect, and engage) should be interpreted broadly and may include intermediate members between sets of elements and relative movement between elements, unless otherwise indicated. Thus, connection references do not necessarily infer that two elements are directly connected and in a fixed relationship to each other.

[0056] Furthermore, identifying references (e.g., primary, secondary, first, second, third, fourth, etc.) are not intended to imply importance or priority, but are used to distinguish one feature from another. The drawings are for illustration only, and the dimensions, positions, order, and relative sizes reflected in the drawings attached hereto may vary.

[0057] The present disclosure is not limited in scope by the specific embodiments described herein. In fact, various other embodiments and modifications of the present disclosure (except those described herein) will be apparent to those of ordinary skill in the art from the foregoing description and the accompanying drawings. Therefore, such other implementations and modifications are intended to fall within the scope of the present disclosure. In addition, the present disclosure has been described herein in the context of specific embodiments in a specific environment for a specific purpose. Those of ordinary skill in the art will recognize that usefulness is not limited thereto, and the present disclosure can be advantageously implemented in any number of environments for any number of purposes. Therefore, the claims set forth below are to be interpreted in light of the full breadth and spirit of the present disclosure as described herein.

Claims

1. A device, include: a first silicon layer, a second silicon layer, and a third silicon layer, the first silicon layer being coupled to the second silicon layer, and the second silicon layer being coupled to the third silicon layer; a first main terminal and a gate terminal coupled to the first silicon layer; a second main terminal coupled to the third silicon layer; as well as One or more silicon regions are formed in the first silicon layer and the third silicon layer, wherein a gate silicon region among the one or more silicon regions is configured to cover the entire gate terminal.

2. The device according to claim 1, in, At least one of the first silicon layer, the second silicon layer, and the third silicon layer is at least one of the following: an n-type layer, a p-type layer, and any combination thereof.

3. The device according to claim 2, in, The first silicon layer and the third silicon layer are n-type layers, and the second silicon layer is a p-type layer.

4. The device according to claim 2, in, The first silicon layer and the third silicon layer are p-type layers, and the second silicon layer is an n-type layer.

5. The device according to claim 2, in, The one or more silicon regions are n-type regions.

6. The device according to claim 1, in, The length of the gate silicon region is greater than the length of the gate terminal.

7. The device according to claim 6, in, The gate silicon region is heavily doped with a dopant.

8. The device according to claim 7, in, The dopant includes at least one of the following: boron, arsenic, phosphorus and any combination thereof.

9. The device according to claim 8, in, The gate silicon region is configured to prevent a small gate current from occurring.

10. The device according to claim 1, in, The first main terminal and the gate terminal are each coupled to at least one region of the one or more regions.

11. The device according to claim 10, in, The first main terminal is coupled to a plurality of the one or more regions.

12. The device according to claim 10, in, The second main terminal is coupled to a plurality of the one or more regions.

13. The device according to claim 1, in, The apparatus is a semiconductor device.

14. The device according to claim 13, in, The semiconductor device is a thyristor.

15. The device according to claim 14, in, The semiconductor device is a TRIAC semiconductor device.

16. A semiconductor device, include: a first silicon layer, a second silicon layer, and a third silicon layer, the first silicon layer being coupled to the second silicon layer, and the second silicon layer being coupled to the third silicon layer; a first main terminal and a gate terminal coupled to the first silicon layer; a second main terminal coupled to the third silicon layer; as well as One or more silicon regions are formed in the first silicon layer and the third silicon layer, wherein a gate silicon region among the one or more silicon regions is configured to cover the entire gate terminal.

17. A method, include: providing a first silicon layer, a second silicon layer, and a third silicon layer; coupling the first silicon layer to the second silicon layer, and coupling the second silicon layer to the third silicon layer; coupling a first main terminal and a gate terminal to the first silicon layer, and coupling a second main terminal to the third silicon layer; and One or more regions are formed in the first silicon layer and the third silicon layer, wherein a gate silicon region among the one or more silicon regions is configured to cover the entire gate terminal.

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